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29 Jun 1992

Volume 60, Issue 26, pp. 3203-3322

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Controlled spontaneous emission in room‐temperature semiconductor microcavities

D. L. Huffaker, C. Lei, D. G. Deppe, C. J. Pinzone, J. G. Neff, and R. D. Dupuis

Appl. Phys. Lett. 60, 3203 (1992); http://dx.doi.org/10.1063/1.106739 (3 pages) | Cited 23 times

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Data are presented demonstrating controlled spontaneous emission in room‐temperature AlGaAs‐GaAs Fabry–Perot microcavities, which utilize high contrast Bragg reflectors. The reflector materials are a CaF2/ZnSe combination. A GaAs quantum well contained in the microcavities is excited using a low power He‐Ne laser, and the spontaneous emission characteristics are measured in terms of spectral characteristics and radiation patterns. The measured data are compared with calculations which predict controlled spontaneous emission in such structures. We find that the dominant effects on spontaneous emission in these thin layer structures are due to cavity controlled emission into allowed optical modes and stress induced dipole orientation in the GaAs quantum well.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.55.Cr III-V semiconductors
85.30.De Semiconductor-device characterization, design, and modeling

Nd3+ active sites in Nd:MgO:LiNbO3 lasers

J. O. Tocho, F. Jaque, J. García Solé, E. Camarillo, F. Cussó, and J. E. Muñoz Santiuste

Appl. Phys. Lett. 60, 3206 (1992); http://dx.doi.org/10.1063/1.106740 (3 pages) | Cited 8 times

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The fluorescence (excitation and emission) spectra of Nd3+ in Nd:MgO:LiNbO3 have been systematically investigated in order to identify the Nd3+ sites responsible for the two, π (1.085 μm) and σ (1.093 μm), infrared laser lines. Experimental results reveal that Nd3+ ions entering both Li+ and Nb5+ lattice sites are responsible for the π emission line (1.085 μm), whereas Nd3+ ions perturbed by close Mg2+ ions, called Nd‐Mg sites, are the sites producing the σ emission line (1.093 μm).
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42.55.Rz Doped-insulator lasers and other solid state lasers
78.30.Hv Other nonmetallic inorganics

Broadly tunable InGaAsP/InP laser based on a vertical coupler filter with 57‐nm tuning range

R. C. Alferness, U. Koren, L. L. Buhl, B. I. Miller, M. G. Young, T. L. Koch, G. Raybon, and C. A. Burrus

Appl. Phys. Lett. 60, 3209 (1992); http://dx.doi.org/10.1063/1.106741 (3 pages) | Cited 43 times

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We have integrated a broadly tunable grating‐assisted vertical coupler as an intracavity filter to demonstrate a novel monolithic multiple‐quantum‐well InGaAsP/InP laser. The narrow, bandpass intracavity filter results in an extended cavity laser with a measured electrical tuning range of 57 nm with single‐frequency operation over most of that range.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.79.Ci Filters, zone plates, and polarizers

Determination of H concentration in LiNbO3 by photorefractive fixing

R. Müller, L. Arizmendi, M. Carrascosa, and J. M. Cabrera

Appl. Phys. Lett. 60, 3212 (1992); http://dx.doi.org/10.1063/1.106742 (3 pages) | Cited 19 times

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A new method to determine the proton concentration in LiNbO3 is presented. The method is based on the measurement of the diffraction efficiency of a photorefractive grating in two situations. It is first measured after recording at room temperature, and second after saturation of the fixing process at a given temperature (about 150 °C). From only these two experimental data, the value obtained for the proton concentration in our sample is H0=(4.4±0.7)×1018 cm−3. This value agrees, within the experimental error, with that obtained from the infrared absorption arising from the OH− stretching bond.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

High quantum efficiency luminescence from a conducting polymer in solution: A novel polymer laser dye

Daniel Moses

Appl. Phys. Lett. 60, 3215 (1992); http://dx.doi.org/10.1063/1.106743 (2 pages) | Cited 137 times

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A novel dye laser based on the soluble conducting polymer poly[2‐methoxy, 5‐(2′ ethyl‐hexyloxy)‐p‐phenylenevinylene], MEH‐PPV, has been demonstrated. Laser action has been tested in a transverse cavity configuration where the conducting polymer laser was pumped by light pulses generated from the second harmonic radiation of a Q‐switched Nd:YAG laser. The performance of MEH‐PPV in solution as a laser dye was compared to that of rhodamine 6G in solution under identical conditions. The results indicate that the quantum yield of MEH‐PPV laser is comparable to that of rhodamine 6G.
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42.55.Mv Dye lasers
42.70.Jk Polymers and organics

Sub‐mA threshold operation of λ=1.5 μm strained InGaAs multiple quantum well lasers grown on (311)B InP substrates

P. J. A. Thijs, J. J. M. Binsma, L. F. Tiemeijer, R. W. M. Slootweg, R. van Roijen, and T. van Dongen

Appl. Phys. Lett. 60, 3217 (1992); http://dx.doi.org/10.1063/1.106744 (3 pages) | Cited 4 times

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1.5 μm wavelength InxGa1−xAs‐InGaAsP (x=0.7, resulting in 1.2% compressive strain and x=0.53, resulting in zero strain) multiple quantum well (MQW) structures were grown on (311)B, (511)A, (511)B, and (001)InP substrates by low‐pressure organometallic vapor phase epitaxy (LP‐OMVPE). Intense and narrow linewidth room‐temperature photoluminescence spectra indicate the device quality of the MQW structures. Strained MQW lasers grown on InP substrates misoriented towards (111)B show about 25% lower threshold current densities than the unstrained MQW lasers. The high quality of the strained MQW structures grown on (311)B InP substrates is demonstrated by the realization of 0.9 mA threshold current buried heterostructure lasers employing semi‐insulating current blocking layers, and entirely grown by LP‐OMVPE.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.60.-v Laser optical systems: design and operation

Growth mode and dislocation distribution in the ZnSe/GaAs (100) system

S. Guha, H. Munekata, F. K. LeGoues, and L. L. Chang

Appl. Phys. Lett. 60, 3220 (1992); http://dx.doi.org/10.1063/1.107465 (3 pages) | Cited 38 times

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We have investigated the effect of the initial growth mode on the dislocation structure in ZnSe epilayers grown on GaAs(100) by molecular beam epitaxy. For the case where the initial growth occurred by the formation and coalescence of three‐dimensional islands, the threading dislocation density was found to be an order of magnitude higher and misfit dislocation lengths much shorter than that for the case where the initial growth proceeded by a two‐dimensional layer‐by‐layer mode. These differences are discussed in terms of dislocation formation at island coalescence boundaries for a three‐dimensional growth mode.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Evolution of quasi‐epitaxial growth of a crystalline organic semiconductor on graphite

Eliav I. Haskal, Franky F. So, Paul E. Burrows, and Stephen R. Forrest

Appl. Phys. Lett. 60, 3223 (1992); http://dx.doi.org/10.1063/1.106700 (3 pages) | Cited 23 times

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We have studied the evolution of the growth of a crystalline organic semiconductor thin film using reflection high energy electron diffraction (RHEED). Our results indicate that highly ordered crystalline films of an organic compound; namely 3, 4, 9, 10‐perylenetetracarboxylic dianhydride (PTCDA), can be grown on graphite by the ultrahigh vacuum process of organic molecular beam deposition even though the crystal structures of the two materials are highly mismatched. The RHEED patterns show the evolution of planar crystal growth from 2 monolayer (∼6 Å) coverage until at least 50 Å as the films are deposited onto substrates cooled to 100 K. At larger film thicknesses, somewhat nonplanar but still crystalline growth occurs. Furthermore, crystalline thin films were obtained independent of growth rate, which was as high as 3.0 Å/s. To our knowledge, this is the first direct experimental evidence of the evolution of growth from monolayer to bulk film coverage into an ordered, quasi‐epitaxial structure.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

K33/K11 determination in nematic liquid crystals: An optical birefringence technique

G. P. Crawford, J. A. Mitcheltree, E. P. Boyko, W. Fritz, S. Zumer, and J. W. Doane

Appl. Phys. Lett. 60, 3226 (1992); http://dx.doi.org/10.1063/1.106701 (3 pages) | Cited 13 times

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Optical birefringence patterns of nematic liquid crystals constrained to supramicrometer capillary tubes with homeotropic anchoring are sensitive to the detailed bulk elastic properties of the nematic material. The bend‐to‐splay elastic constant ratio (K33/K11) is estimated by comparing the escaped‐radial nematic director field observed via optical polarizing microscopy to simulated textures predicted by the Frank elastic theory.
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61.30.-v Liquid crystals
62.10.+s Mechanical properties of liquids
07.60.Pb Conventional optical microscopes

Internal stress reduction by nitrogen incorporation in hard amorphous carbon thin films

D. F. Franceschini, C. A. Achete, and F. L. Freire

Appl. Phys. Lett. 60, 3229 (1992); http://dx.doi.org/10.1063/1.106702 (3 pages) | Cited 114 times

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Results of a study on internal stress, hardness, and structure of nitrogen‐doped amorphous hydrogenated hard carbon films deposited by rf glow discharge from methane‐nitrogen mixtures onto silicon substrate are presented. Films obtained for different N2 partial pressures (bias voltage Vb=−370 V and total pressure P=8 Pa) were characterized by infrared spectroscopy, Raman scattering, and nuclear techniques. The elemental composition, density, and structure are correlated with Vickers hardness and internal stress values, obtained from the substrate bending method. It has been observed that internal stress considerably decreases with increasing nitrogen content, in contrast to hardness, structure, and hydrogen concentration, which remain unchanged.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.60.Bs Mechanical and acoustical properties
78.30.Hv Other nonmetallic inorganics
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Tip for scanning tunneling microscopy made of monocrystalline, semiconducting, chemical vapor deposited diamond

Eric P. Visser, Jan W. Gerritsen, Willem J. P. van Enckevort, and Herman van Kempen

Appl. Phys. Lett. 60, 3232 (1992); http://dx.doi.org/10.1063/1.106703 (3 pages) | Cited 10 times

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A tip for scanning tunneling microscopy (STM) was fabricated from semiconducting, chemical vapor deposited (CVD) diamond, epitaxially grown on a natural diamond substrate. Extremely high, p‐type conductivity was realized by heavy boron doping. A sharp tip was obtained by conventional diamond polishing in such a way that the ultimate tip (radius<12 nm) is situated in the electrically conductive CVD layer. Atomic resolution on graphite surfaces could easily be obtained under normal operating conditions for STM in air. The feasibility of using the diamond tip to create nanostructures on surfaces was also investigated.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Selection of solutes for improving electromigration resistance of metals: A new insight

M. B. Small and D. A. Smith

Appl. Phys. Lett. 60, 3235 (1992); http://dx.doi.org/10.1063/1.106704 (3 pages)

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There has long been as much art as science for choosing solute elements to improve the resistance to electromigration of metals such as aluminum. Alloying additions have been selected with the intention of maximizing the degree of segregation to the grain boundaries, exploiting differences in atom size to limit the grain‐boundary excess volume, and forming grain‐boundary precipitates which potentially can act as reservoirs of solute or as internal diffusion barriers. We show, using published data concerning the performance of a number of Al alloys measured under similar conditions, that the above strategies do not provide a direct correlation with lifetime. A further necessary condition for an addition which forms a precipitate in a eutectic system is its ability to dissolve into the grain boundary to replenish material driven away by electromigration. In peritectic systems, significant supersaturation can exist in the grains, and the grain boundaries. Equilibration of such systems decreases their effectiveness. In such systems, grains rather than precipitates can act as reservoirs.
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85.40.Ls Metallization, contacts, interconnects; device isolation
72.15.-v Electronic conduction in metals and alloys
66.30.Qa Electromigration

Effect of polymer matrix glass transition temperature on polymer dispersed liquid crystal electro‐optics

J. L. West, J. R. Kelly, K. Jewell, and Y. Ji

Appl. Phys. Lett. 60, 3238 (1992); http://dx.doi.org/10.1063/1.106705 (3 pages) | Cited 19 times

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We have studied the electro‐optic properties as a function of temperature of a polymer dispersed liquid crystal film composed of E7 dispersed as droplets in a polyvinylformal (PVFM) matrix. The drive voltage and turn‐off time change abruptly as the temperature is raised above the glass transition temperature (Tg) of the PVFM matrix. There is essentially no hysteresis below, but significant hysteresis above Tg. These temperature effects are completely reversible. The rapid change in electro‐optic properties cannot be entirely explained by changes in the polymer dielectric properties or droplet shape. Freedericksz measurements show no abrupt change in the surface anchoring energy at Tg, which may be responsible for the changes observed in the electro‐optic response.
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61.30.-v Liquid crystals
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
42.70.Df Liquid crystals

Doping of the layered compound SnS2 by phosphorus ion‐implantation

O. Amir, E. Lifshitz, V. Richter, C. Uzan‐Saguy, and R. Kalish

Appl. Phys. Lett. 60, 3241 (1992); http://dx.doi.org/10.1063/1.106706 (3 pages)

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Electrical activation of P implants in the layered semiconductor SnS2 is reported. Low‐temperature annealing (300 °C) is shown to remove all implantation related lattice damage, but does not lead to any significant change in the electrical conductivity. Following higher annealing temperatures (up to 500 °C) the conductivity increases by over 5 orders of magnitude. Hall measurements show this conductivity to be n‐type. The possibility that the observed electrical behavior is not due to phosphorus donor activity but is related to the implantation damage or to the annealing procedure is eliminated by Ar implantation control experiments which do not show any increased conductivity.
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61.72.up Other materials
61.80.Jh Ion radiation effects
61.72.Bb Theories and models of crystal defects
72.80.Jc Other crystalline inorganic semiconductors

Low‐temperature chemical vapor deposition of boron‐nitride films using hydrogen azide

Ryoichi Ishihara, Osamu Sugiura, and Masakiyo Matsumura

Appl. Phys. Lett. 60, 3244 (1992); http://dx.doi.org/10.1063/1.106707 (3 pages) | Cited 4 times

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Stoichiometric boron‐nitride films have been successfully deposited at temperatures as low as 400 °C by chemical vapor deposition using diborane (B2H6) and hydrogen azide (HN3). The film deposited on the silicon substrate at 475 °C was amorphous and contained hydrogen atoms with a density of 1.3×1022 cm−3. The breakdown field strength and the low‐field resistivity were 2.8 MV/cm and 1015 Ω cm, respectively. The optical and low‐frequency dielectric constants were 3.6 and 4.0, respectively. Metal‐insulator‐metal device equipped with this film showed steep current‐voltage characteristics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Ng Insulators
73.40.Rw Metal-insulator-metal structures

Surface and interface structures of S‐passivated GaAs(111) studied by soft x‐ray standing waves

Munehiro Sugiyama, Satoshi Maeyama, Masaharu Oshima, Haruhiro Oigawa, Yasuo Nannichi, and Hiroo Hashizume

Appl. Phys. Lett. 60, 3247 (1992); http://dx.doi.org/10.1063/1.106708 (3 pages) | Cited 20 times

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Surface and interface structures of S‐passivated GaAs(111)A and (111)B with and without CaF2 overlayers have been investigated using the soft x‐ray standing‐wave technique. On the GaAs(111)A surface S atoms are located on top of the first layer Ga atoms, while on the GaAs(111)B surface S atoms replace the first layer As atoms. This is in agreement with the photoemission results. It is found that CaF2 deposition and post‐annealing does not change the position of S atoms. A well‐ordered S structure for S/GaAs(111)B is maintained, indicating a high stability of S—Ga bonds. This is in contrast to the low coherent fraction for the S interlayer atoms observed from the CaF2/S/GaAs(111)A system.
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81.65.-b Surface treatments
78.70.En X-ray emission spectra and fluorescence
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Investigation of the nucleation of oxygen precipitates in Czochralski silicon at an early stage

H. Zimmermann and R. Falster

Appl. Phys. Lett. 60, 3250 (1992); http://dx.doi.org/10.1063/1.106709 (3 pages)

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The nucleation of oxygen precipitates in Czochralski silicon is examined in an early stage by measuring vacancy profiles with platinum diffusion. Using an analytical expression, which was deduced from the equations of the Frank–Turnbull diffusion mechanism, the vacancy profiles are calculated from measured platinum diffusion profiles. The vacancy concentration of differently treated Czochralski (CZ) material is compared to the vacancy concentration of float zone (FZ) silicon. In CZ silicon a decrease of the vacancy concentration with increasing nucleation time and platinum diffusion time is found. This decrease cannot be explained by a supersaturation of silicon self‐interstitials caused by nucleation and by recombination of self‐interstitials and vacancies alone. A direct consumption of vacancies during nucleation also is present. The annihilation rate of the vacancies during nucleation can be estimated to be smaller than 5×108 cm−3 s−1 at 770 °C.
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61.72.jd Vacancies
61.72.jj Interstitials
81.10.-h Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
66.30.J- Diffusion of impurities

Arsenic precipitates in Al0.3Ga0.7As/GaAs multiple superlattice and quantum well structures

K. Mahalingam, N. Otsuka, M. R. Melloch, and J. M. Woodall

Appl. Phys. Lett. 60, 3253 (1992); http://dx.doi.org/10.1063/1.106710 (3 pages) | Cited 37 times

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Arsenic precipitates in Al0.3Ga0.7As/GaAs multiple superlattices and quantum well structures which were grown at low substrate temperatures by molecular beam epitaxy were studied by transmission electron microscopy. Novel precipitate microstructures were observed in annealed samples, including confinement of precipitates in GaAs wells and nearly complete depletion of precipitates in a short period superlattice. It is shown that these observed microstructures can be explained as a result of the difference of precipitate/matrix interfacial energies in GaAs and Al0.3Ga0.7As.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs‐coated Si by molecular beam epitaxy

W. Dobbelaere, J. De Boeck, P. Heremans, R. Mertens, G. Borghs, W. Luyten, and J. Van Landuyt

Appl. Phys. Lett. 60, 3256 (1992); http://dx.doi.org/10.1063/1.106711 (3 pages) | Cited 17 times

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We report on the first InAs0.85Sb0.15 infrared photodiodes, grown on GaAs and GaAs‐coated Si substrates by molecular beam epitaxy. Transmission electron microscopy images reveal a good structural quality. The electrical characteristics of the photodiodes were analyzed using current‐voltage, current‐temperature, and capacitance‐voltage measurements. The spectral response and detector noise were measured at 77 K, resulting in a peak detectivity at 3.8 μm of 1.5×1011 cm Hz1/2/W for InAs0.85Sb0.15/GaAs and 5.0×1010 cm Hz1/2/W for InAs0.85Sb0.15/GaAs/Si.
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85.60.Dw Photodiodes; phototransistors; photoresistors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Comparison of gallium and arsenic precursors for GaAs carbon doping by organometallic vapor phase epitaxy using CCl4

W. S. Hobson, S. J. Pearton, D. M. Kozuch, and M. Stavola

Appl. Phys. Lett. 60, 3259 (1992); http://dx.doi.org/10.1063/1.106712 (3 pages) | Cited 15 times

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The carbon doping properties of GaAs grown by low pressure (30 Torr) organometallic vapor phase epitaxy at 520–700 °C with CCl4 as the dopant precursor were compared for the four possible combinations of trimethylgallium (TMGa), triethylgallium (TEGa), arsine (AsH3), and tertiarybutylarsine (TBAs). Secondary ion mass spectrometry (SIMS), Hall measurements, and infrared absorption were used to characterize the GaAs:C layers. Very high C‐doping concentrations (∼1020 cm−3) could be obtained using either TMGa or TEGa and AsH3. The use of TBAs instead of AsH3 led to a significant reduction in carbon incorporation, by approximately a factor of 5–10 per mole of As precursor over the growth temperature range examined. Hydrogen at significant concentrations (1–6×1019 cm−3) was detected by SIMS in GaAs: C layers grown at ≤550 °C utilizing all four combinations of Ga/As precursors. The existence of electrically inactive C‐H complexes was confirmed by observation of the C‐H stretching mode at 2635 cm−1. A post‐growth anneal under helium at 550 °C for 60 s removed the C‐H pairs resulting in a 50%–100% increase in hole concentration. There was no change in the hole concentration for GaAs:C grown at ≥600 °C, indicating negligible hydrogen passivation.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
61.72.U- Doping and impurity implantation
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Charged dangling bonds in undoped amorphous silicon

G. Schumm, E. Lotter, and G. H. Bauer

Appl. Phys. Lett. 60, 3262 (1992); http://dx.doi.org/10.1063/1.106713 (3 pages) | Cited 16 times

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We report a basic disproportionality between light‐induced changes in the defect density of undoped hydrogenated amorphous silicon (a‐Si:H) determined from optical absorption and determined from spin density measurements. The results yield a lower limit for the ratio of charged to neutral dangling bonds in annealed a‐Si:H of around 2–2.5, and in degraded material this ratio is reduced. The derived minimum ratio holds if charged dangling bonds are caused by unintentional impurity doping, a ratio approximately twice as large is obtained if the charged dangling bonds are formed according to thermodynamical equilibration models. The observed Fermi level shifts and optical absorption spectra during light soaking and annealing favor the thermodynamical equilibration model.
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71.55.Jv Disordered structures; amorphous and glassy solids
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.66.-w Optical properties of specific thin films

Formation of stoichiometric SiGe oxide by electron cyclotron resonance plasma

P. W. Li, H. K. Liou, E. S. Yang, S. S. Iyer, T. P. Smith, and Z. Lu

Appl. Phys. Lett. 60, 3265 (1992); http://dx.doi.org/10.1063/1.106714 (3 pages) | Cited 16 times

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Electron cyclotron resonance (ECR) plasma oxidation of SiGe alloys was investigated at temperatures from room temperature to 500 °C. Both Si and Ge are shown to be fully oxidized, forming SiO2 and GeO2. Auger depth profiling reveals that there is no Ge‐rich SiGe layer after oxidation. With increasing temperature up to 500 °C, the oxide is stoichiometric and it does not lose its GeO2 component. Oxidation has also been carried out at both positive and negative sample bias in order to identify the role of ions, electrons, and neutrals. From biasing experiments negative oxygen ions and atomic neutrals appear to be the major reaction species.
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81.65.-b Surface treatments
73.61.Ng Insulators

Transport properties of closely separated two‐dimensional electron gases in a channel‐doped back gated high electron mobility transistor

A. Kurobe, J. E. F. Frost, D. A. Ritchie, G. A. C. Jones, and M. Pepper

Appl. Phys. Lett. 60, 3268 (1992); http://dx.doi.org/10.1063/1.106715 (3 pages) | Cited 7 times

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We have investigated electron transport in two, closely separated, two‐dimensional electron gases in a wide GaAs quantum well controlled both by front and back gates. The electron mobility in the back channel was considerably reduced by impurity doping. Magnetotransport measurements suggest the existence of a low mobility state associated with a high mobility front gas state. The results have a bearing on the proposed velocity modulation transistor, as the existence of two electron channels localized at their respective interfaces, without mutual interaction, can be difficult to achieve.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Dn Low-field transport and mobility; piezoresistance
85.30.Tv Field effect devices

Theoretical studies of defect‐initiated particle emission from GaP(110) surfaces: Basis for a new technique of generating perfect surfaces

N. Itoh, K. Hattori, Y. Nakai, J. Kanasaki, A. Okano, C. K. Ong, and G. S. Khoo

Appl. Phys. Lett. 60, 3271 (1992); http://dx.doi.org/10.1063/1.106716 (3 pages) | Cited 16 times

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We have calculated the energy needed to eject P atoms from several types of defects on the GaP (110) surface as well as from the perfect surface. It is found that most types of defects have a Ga or P atom bonded less strongly than those on the perfect surface. In view of the result of calculation, and of recent experimental observation that less strongly bonded atoms are ejected by irradiation with laser pulses of lower fluences, we suggest a new method of producing perfect surfaces using laser irradiation to eliminate steps and adatoms and deposition to eliminate vacancies.
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81.65.-b Surface treatments
79.20.Ds Laser-beam impact phenomena
68.35.Dv Composition, segregation; defects and impurities

Growth and characterization of ZnSe crystals grown by the solution growth method

Yasuo Okuno, Michihiro Sano, Hiroyuki Kato, and Tsuyosi Maruyama

Appl. Phys. Lett. 60, 3274 (1992); http://dx.doi.org/10.1063/1.106717 (3 pages) | Cited 3 times

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Bulklike ZnSe crystal with crystallographic quality the same as commercial GaAs can be grown at a growth temperature of 950 °C by the solution growth method. The growth rate of the crystal depends on the temperature gradient in the solvent, the length of the heat sink and the mol % of Se in the solvent. The full width at half maximum (FWHM) of x‐ray rocking curve of the ZnSe crystal grown by this method is nearly the same as that of GaAs. The crystal grown from a Te/Se solvent of Te≤70 mol % can be regarded as essentially ZnSe from the cathodoluminescence measurement.
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81.10.Dn Growth from solutions
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
78.60.Hk Cathodoluminescence, ionoluminescence
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