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6 Jan 1992

Volume 60, Issue 1, pp. 1-140

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Domain inversion in LiTaO3 by electron beam

Wei‐Yung Hsu and Mool C. Gupta

Appl. Phys. Lett. 60, 1 (1992); http://dx.doi.org/10.1063/1.107352 (3 pages) | Cited 37 times

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Domain inversion in Z‐cut LiTaO3 by injecting electrons into negative C face was observed but no domain inversion was observed on injecting electrons on positive C face. At low electron‐beam currents, small multidomains are observed. At a scan rate of 2 μm/s and beam current of 100 pA, a domain width of about 6 μm was obtained. We present results of domain width and domain size variation with electron‐beam scan rate.
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77.80.Dj Domain structure; hysteresis
61.80.Fe Electron and positron radiation effects
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Optically induced and erased birefringence and dichroism in azoaromatic polymers

P. Rochon, J. Gosselin, A. Natansohn, and S. Xie

Appl. Phys. Lett. 60, 4 (1992); http://dx.doi.org/10.1063/1.107369 (2 pages) | Cited 147 times

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Dichroism and birefringence are shown to be optically induced and erased in high‐glass‐transition azoaromatic polymers. The resulting polarization information is easily detected and exhibits long‐term stability. This optically induced reorientation of the azoaromatic molecules will have wide applications in image recording and in electro‐optical devices.
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78.20.Fm Birefringence
33.55.+b Optical activity and dichroism
42.25.Lc Birefringence

Low‐threshold InGaAs strained‐layer quantum‐well lasers (λ=0.98 μm) with GaInP cladding layers and mass‐transported buried heterostructure

Z. L. Liau, S. C. Palmateer, S. H. Groves, J. N. Walpole, and L. J. Missaggia

Appl. Phys. Lett. 60, 6 (1992); http://dx.doi.org/10.1063/1.107377 (3 pages) | Cited 38 times

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Buried‐heterostructure quantum‐well lasers fabricated by mass transport are reported for In0.18Ga0.82As/GaAs/Ga0.5In0.5P strained‐layer structures grown by atmospheric pressure organometallic vapor‐phase epitaxy. Threshold current densities as low as 85 A/cm2 are measured for broad‐stripe lasers, and buried‐stripe devices show threshold currents as low as 3 mA and differential quantum efficiencies as high as 34% per facet without coatings.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Carrier capture times in 1.5 μm multiple quantum well optical amplifiers

S. Weiss, J. M. Wiesenfeld, D. S. Chemla, G. Raybon, G. Sucha, M. Wegener, G. Eisenstein, C. A. Burrus, A. G. Dentai, U. Koren, B. I. Miller, H. Temkin, R. A. Logan, and T. Tanbun‐Ek

Appl. Phys. Lett. 60, 9 (1992); http://dx.doi.org/10.1063/1.107426 (3 pages) | Cited 46 times

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The carrier capture times in multiple quantum well semiconductor amplifiers of different structures are studied under high plasma density conditions. Fast (<1 ps), slow (≳150 ps), and intermediate time constants (2–7 ps) are identified in InGaAs quantum well structures. The intermediate time constant is attributed to carrier diffusion in the cladding layers and identified as the carrier capture time. Short capture times can be achieved by proper design of the device structure.
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42.55.Px Semiconductor lasers; laser diodes
78.47.-p Spectroscopy of solid state dynamics
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Baseband integrated acousto‐optic frequency shifter

Z. Y. Cheng and C. S. Tsai

Appl. Phys. Lett. 60, 12 (1992); http://dx.doi.org/10.1063/1.107347 (3 pages) | Cited 3 times

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A novel baseband integrated acousto‐optic frequency shifter with a −3 dB tunable bandwidth of 121 MHz (from −61 to 60 MHz) at the optical wavelength of 0.6328 μm has been constructed in a Y‐cut LiNbO3 waveguide, 0.2×1.0×2.0 cm3 in size. Suppression of the various unwanted components by as much as 50 dB has been accomplished. Since the frequency‐shifted light propagates in a fixed direction, irrespective of the magnitude of frequency shift, this baseband acousto‐optic frequency shifter can be readily used in fiber‐optic systems.  
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42.79.Hp Optical processors, correlators, and modulators
42.79.Jq Acousto-optical devices
42.81.-i Fiber optics

Ultrafast (up to 39 GHz) relaxation oscillation of vertical cavity surface emitting laser

J. Lin, J. K. Gamelin, K. Y. Lau, S. Wang, M. Hong, and J. P. Mannaerts

Appl. Phys. Lett. 60, 15 (1992); http://dx.doi.org/10.1063/1.107457 (3 pages) | Cited 7 times

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Relaxation oscillation of frequency as high as 39 GHz has been observed in a surface emitting laser (SELD). The correlation between the observed relaxation oscillation and the modulation bandwidth was studied. The experimental results suggest that SELDs have the potential to operate at several times the highest modulation speed achieved so far.  
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Reduced temperature dependence of threshold current by broadband enhanced feedback: A new approach and demonstration

W. T. Tsang, F. S. Choa, R. A. Logan, T. Tanbun‐Ek, A. M. Sergent, and K. W. Wecht

Appl. Phys. Lett. 60, 18 (1992); http://dx.doi.org/10.1063/1.107351 (3 pages) | Cited 10 times

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A new approach to reduce the rates of threshold current increase and external quantum efficiency decrease with increasing temperature in a semiconductor laser is proposed and demonstrated. This is based on the realization that the total laser cavity loss, which is normally relatively independent of wavelength, can be made to decrease with increasing wavelength. Since the gain peak of the laser shifts towards longer wavelength as temperature is increased, the rate of threshold current increase is thus reduced with increasing temperature. To implement this, we proposed and demonstrated the broadband enhanced feedback (BEF) approach using multilayer coatings, very weak or chirp gratings with peak reflectivity centered at the lasing wavelength corresponding to the maximum operating temperature desired. It was shown that the threshold‐temperature coefficient T0 improved from the typical value of ∼45 K in long wavelength InGaAsP lasers (bulk active or MQW) to 85 K in BEF coated lasers. This scheme also simultaneously decreased the rate of quantum efficiency degradation with increasing temperature.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Effect of cavity size on lasting characteristics of a distributed Bragg reflector‐surface emitting laser with buried heterostructure

K. Mori, T. Asaka, H. Iwano, M. Ogura, S. Fujii, T. Okada, and S. Mukai

Appl. Phys. Lett. 60, 21 (1992); http://dx.doi.org/10.1063/1.107353 (2 pages) | Cited 7 times

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Transverse‐mode characteristics of the distributed Bragg reflector‐surface emitting laser diode with buried heterostructure were investigated as a function of the cavity size. Stable, fundamental transverse‐mode operation was achieved for cavity openings of 4 μm in diameter and smaller. The effect of cavity size on threshold current and polarization characteristics is also discussed.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Noncontact monitoring of laser ablation using a miniature piezoelectric probe to detect photoacoustic pulses in air

Wing P. Leung and Andrew C. Tam

Appl. Phys. Lett. 60, 23 (1992); http://dx.doi.org/10.1063/1.107354 (3 pages) | Cited 31 times

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We show for the first time the use of pulsed photoacoustic detection using a miniature piezoelectric transducer to study and monitor photoablation in air by an ultraviolet KrF excimer laser. At incident laser fluences below the ablation threshold, the photoacoustic signal is produced by the thermal expansion of the air near the irradiated surface (‘‘thermal‐piston signal’’) and propagates at the speed of sound. Above the ablation threshold, the photoacoustic signal contains an additional component due to the ejection of ablated materials (‘‘ablative‐piston signal’’); this propagates initially at supersonic speeds. The amplitude of the ablative‐piston signal is found to be a monotonic function of the etch‐depth per pulse. Hence, by accumulating the amplitude of the ablative acoustic pulse, the total etch depth can be monitored in real time.  
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
79.20.Ds Laser-beam impact phenomena
43.38.Fx Piezoelectric and ferroelectric transducers
43.58.Kr Spectrum and frequency analyzers and filters; acoustical and electrical oscillographs; photoacoustic spectrometers; acoustical delay lines and resonators

Injection locking of antiguided resonant optical waveguide arrays

M. Jansen, D. Botez, L. J. Mawst, T. J. Roth, J. J. Yang, P. Hayashida, L. Dozal, and J. Rozenbergs

Appl. Phys. Lett. 60, 26 (1992); http://dx.doi.org/10.1063/1.107355 (3 pages) | Cited 3 times

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We report on the first demonstration of injection locking of strong index‐guided large‐aperture devices [20‐element resonant‐optical‐waveguide (ROW) antiguided arrays] under pulsed operation. Full locking was achieved far above the threshold level (2.6×Ith) by injecting light from a master oscillator in a direction normal to the diode facet and only in one element of the 20‐element ROW array. Single‐frequency tuning is achieved over a ≥30 Å spectral range for emission in the 8500 Å region, while the beam pattern remains spatially stable and diffraction limited. For devices operating nearly resonant (i.e., beam width 2 to 3× the diffraction limit) injection locking accomplishes both single‐frequency as well as diffraction‐limited‐beam operation.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation
42.82.Et Waveguides, couplers, and arrays

Schlieren visualization of acoustic phase conjugate waves generated by nonlinear electroacoustic interaction in LiNbO3

M. Ohno and K. Takagi

Appl. Phys. Lett. 60, 29 (1992); http://dx.doi.org/10.1063/1.107356 (3 pages) | Cited 1 time

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The acoustic phase conjugate wave was generated at 56 MHz by nonlinear electroacoustic interaction in LiNbO3 and its field was visualized with the schlieren technique. The field distribution of the phase conjugate wave was observed to be very close to that of the incident wave, and the time‐reversal property of the phase conjugate waves was experimentally confirmed for the first time.  
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43.25.Dc Nonlinear acoustics of solids
77.65.-j Piezoelectricity and electromechanical effects
62.65.+k Acoustical properties of solids

Dependence of cathode aperture in pulsed hollow‐cathode discharges

M. Favre, A. M. Leñero, P. Choi, H. Chuaqui, and E. Wyndham

Appl. Phys. Lett. 60, 32 (1992); http://dx.doi.org/10.1063/1.107357 (3 pages) | Cited 5 times

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The effect of electric field penetration in the hollow‐cathode region of self‐initiated pulsed hollow‐cathode discharge is investigated. The discharge is operated in hydrogen at pressures between 30 and 200 mTorr with applied voltages between 10 and 30 kV. Aluminum cathodes with aperture diameters and lengths from 1 to 5 and 2 to 18 mm, respectively, are used. The results show that the effect of the hollow cathode in discharge initiation is particularly strong at low pressures. In the range of parameters investigated, the time delay to breakdown and the jitter decrease when cathode aperture with larger diameters and shorter lengths are used. At high pressure the pulsed hollow‐cathode effect is less important as ionization processes in the main gap become dominant.
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52.80.-s Electric discharges
51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)
52.75.Kq Plasma switches (e.g., spark gaps)

Laser‐induced fluorescence of oxygen atoms in a plasma reactor

G. Hancock and M. J. Toogood

Appl. Phys. Lett. 60, 35 (1992); http://dx.doi.org/10.1063/1.107486 (3 pages) | Cited 18 times

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Two‐photon laser‐induced fluorescence (LIF) of ground‐state oxygen atoms following excitation of the 2p3 3p1 3P–2p4 3P transition has been investigated in a rf parallel‐plate plasma reactor. Stimulated emission on the 2p3 3p1 3P–2p3 3s1 3S transition is readily detected, and leads to marked nonlinearities in the LIF signal as a function of O‐atom concentration. Absolute concentrations have been determined as a function of gas composition in CF4/O2 mixtures, and shown to depend on the measured wall loss rates. The method is used to indicate limitations in the use of optical emission as a diagnostic for O atoms.
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68.55.-a Thin film structure and morphology
52.70.Kz Optical (ultraviolet, visible, infrared) measurements

Reaction and epitaxial regrowth at the Ni/GaAs(001) interface: A state‐specific x‐ray photoelectron diffraction investigation

S. A. Chambers and V. A. Loebs

Appl. Phys. Lett. 60, 38 (1992); http://dx.doi.org/10.1063/1.107358 (3 pages) | Cited 5 times

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We demonstrate, for the first time, that state‐specific x‐ray photoelectron diffraction can be used to determine the structural environment of reacted substrate atoms at a metal/semiconductor interface. Such measurements reveal that extensive reactivity at the Ni/GaAs(001) interface is followed by epitaxial regrowth of a CsCl phase in which Ni atoms occupy one sublattice and disrupted Ga and As atoms occupy the other sublattice.
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61.05.J- Electron diffraction and scattering
79.60.Jv Interfaces; heterostructures; nanostructures
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Epitaxial growth of BaTiO3 thin films by organometallic chemical vapor deposition

L. A. Wills, B. W. Wessels, D. S. Richeson, and T. J. Marks

Appl. Phys. Lett. 60, 41 (1992); http://dx.doi.org/10.1063/1.107359 (3 pages) | Cited 80 times

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Epitaxial BaTiO3 thin films were grown in situ on (100) LaAlO3 by low‐pressure organometallic chemical vapor deposition using the precursors Ba (hexafluoroacetylacetonate)2 (tetraglyme) and titanium tetraisopropoxide. The phase composition and epitaxial quality were sensitive to the reactant partial pressures and growth temperature. Deposition at 800 °C yielded [100]‐oriented BaTiO3 films. In‐plane epitaxy was confirmed for the BaTiO3 films by x‐ray diffraction.
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77.55.-g Dielectric thin films
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Van der Waals epitaxy of thick Sb, Ge, and Ge/Sb films on mica

H. J. Osten, J. Klatt, and G. Lippert

Appl. Phys. Lett. 60, 44 (1992); http://dx.doi.org/10.1063/1.107367 (3 pages) | Cited 6 times

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We attempt to grow 20‐nm‐thick layers of Sb and Ge as well as periods of (20 nm Sb/20 nm Ge) layers on muscovite (a special form of mica) by van der Waals epitaxy under different growth conditions. The growth process was in situ investigated by reflection high‐energy electron diffraction and Auger electron spectroscopy. Epitaxial Sb layers could be obtained even at cold substrates (mica or polycrystalline Ge layers). It was not possible to grow monocrystalline Ge layers by van der Waals epitaxy. Only a formation of oriented Ge grains could be observed at higher temperatures.
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68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Oxygen diffusion into diamond induced by hydrogen microwave plasma

Y. Mori, N. Eimori, H. Kozuka, Y. Yokota, J. Moon, J. S. Ma, T. Ito, and A. Hiraki

Appl. Phys. Lett. 60, 47 (1992); http://dx.doi.org/10.1063/1.107368 (3 pages) | Cited 6 times

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Diffusion of oxygen atoms into diamond can be introduced by CrO3 treatment followed by an exposure to a hydrogen plasma. From characterization using Rutherford backscattering spectrometry, it is found that the depth distribution of the doped oxygen in the diamond is homogeneous from the surface where its concentration is about 1020 atoms/cm3. The doped oxygen can form cathodoluminescence centers yielding luminescence peaks at 3.75 and 4.64 eV at room temperature. After the diffusion of oxygen atoms, damages in the diamond cannot be detected by Raman scattering spectroscopy.
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61.72.up Other materials
66.30.Ny Chemical interdiffusion; diffusion barriers
61.72.jn Color centers
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Mechanisms of copper chemical vapor deposition

Susan L. Cohen, Michael Liehr, and Srinandan Kasi

Appl. Phys. Lett. 60, 50 (1992); http://dx.doi.org/10.1063/1.107370 (3 pages) | Cited 48 times

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The mechanism of copper chemical vapor deposition from Cu(II)bis‐hexafluoroacetylacetonate [Cu(hfac)2] and 1,5‐cyclooctadiene‐Cu(I)‐hexafluoroacetylacetonate (COD‐Cu‐hfac) has been determined. The results explain the different processing conditions required for deposition from the precursors. Both molecules react at room temperature on Ag to form a similar Cu(I)‐hfac surface intermediate. Subsequent reaction of the COD‐Cu‐hfac fragment can lead to loss of the organic ligands leaving clean Cu. In contrast, for Cu(hfac)2, the presence of one extra surface hfac requires the addition of an external reductant to produce a ligand‐free Cu film.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Hydrogen coverage during Si growth from SiH4 and Si2H6

S. M. Gates and S. K. Kulkarni

Appl. Phys. Lett. 60, 53 (1992); http://dx.doi.org/10.1063/1.107371 (3 pages) | Cited 51 times

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Time‐of‐flight direct recoiling (DR) measurements of surface hydrogen coverage (θH) are made in situ during chemical beam epitaxy growth of Si from Si2H6 on Si(100) as a function of temperature and disilane flux. Temperatures (T) of 300–900 °C and fluxes from 1015 to 1017 molecules cm−2 s−1 are used. Limited data for SiH4 are also presented. Predictions of θH from a steady state kinetic model are compared with the measurements, enabling the reactive sticking probability (S) of Si2H6 to be estimated at T≳500 °C.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.35.Dv Composition, segregation; defects and impurities
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Reflection‐high‐energy‐electron‐diffraction intensity oscillations of Si(111) during gas source molecular beam epitaxy

W. K. Liu, S. M. Mokler, N. Ohtani, J. Zhang, and B. A. Joyce

Appl. Phys. Lett. 60, 56 (1992); http://dx.doi.org/10.1063/1.107372 (3 pages) | Cited 9 times

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Reflection‐high‐energy‐electron‐diffraction (RHEED) intensity oscillations were used to monitor Si(111) growth during gas source molecular beam epitaxy using disilane. Intensity oscillations were measured as a function of both substrate temperature and disilane flow rate. Within the substrate temperature range of 490–560 °C where growth proceeded two dimensionally, well‐defined intensity oscillations corresponding to bilayer growth could be observed along the [211] and [110] azimuths. The oscillation frequencies were found to increase with increasing substrate temperature as well as disilane flow rate. At lower temperatures where no dissociative adsorption of disilane occurred, intensity oscillations were not observed. At higher temperatures, growth entered the step flow regime and the intensity oscillations were weak or absent.  
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.10.Bk Growth from vapor

Activation energy for the photoluminescence W center in silicon

Peter J. Schultz, T. D. Thompson, and R. G. Elliman

Appl. Phys. Lett. 60, 59 (1992); http://dx.doi.org/10.1063/1.107373 (3 pages) | Cited 11 times

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This work presents a systematic study of the substrate temperature dependence for the formation of the photoluminescent W center during high energy self‐ion irradiation of silicon. All previous studies of this center were for postirradiation annealing, and we show that the formation is well described by a thermally activated process involving both the release of point defects from secondary defect complexes and the rate‐limited activation of the center itself. We deduce an activation energy of Ea∼0.85 eV for the growth of the W center, and discuss the relationship of this type of experiment to conventional annealing studies.
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61.72.-y Defects and impurities in crystals; microstructure
61.80.Jh Ion radiation effects
78.55.Hx Other solid inorganic materials

Size and packing of fullerenes on C60/C70 crystal surfaces studied by atomic force microscopy

Peter Dietz, Kosta Fostiropoulos, Wolfgang Krätschmer, and Paul K. Hansma

Appl. Phys. Lett. 60, 62 (1992); http://dx.doi.org/10.1063/1.107374 (3 pages) | Cited 17 times

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Atomic force microscopy was used to image C60/C70 crystal surfaces under ethanol with resolution of single molecules. Spherical and elongated elliptical fullerenes were observed which most likely correspond with C60 respectively C70. Measurements of the maximum diameter for a large number of molecules confirm the presence of two species of fullerenes, one with 9.4 Å, the other with 11.2 Å. The observed ratio C60:C70 is 81:19, in good agreement with spectroscopical data. The molecules are arranged either in hexagonal or cubic packing; in some areas the two arrangements alternate within a few nm. Elongated fullerenes appear to prefer the hexagonal packing.  
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Fx Diffusion; interface formation

Minority carrier transport in carbon doped gallium arsenide

C. M. Colomb, S. A. Stockman, S. Varadarajan, and G. E. Stillman

Appl. Phys. Lett. 60, 65 (1992); http://dx.doi.org/10.1063/1.107375 (3 pages) | Cited 9 times

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Minority carrier electron mobilities and diffusion lengths in p‐type C‐doped GaAs have been measured at room temperature and 77 K using the zero field time of flight (ZFTOF) technique on p+–n structures with p+ carrier concentrations of 1.1×1019, 6.0×1018, 1.8×1018 cm−3, which were grown by low‐pressure metalorganic chemical vapor deposition (MOCVD) using CCl4 as the dopant. The electron mobilities obtained are higher than those reported for Be‐doped MBE GaAs but lower than those reported for Ge‐doped, LPE GaAs, while the diffusion lengths are similar to those found in similar concentration Be‐doped samples.  
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72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Ey III-V and II-VI semiconductors

Selective growth of GaAs wire structures by electron beam induced metalorganic chemical vapor deposition

T. Takahashi, Y. Arakawa, M. Nishioka, and T. Ikoma

Appl. Phys. Lett. 60, 68 (1992); http://dx.doi.org/10.1063/1.107376 (3 pages) | Cited 7 times

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We succeeded in the fabrication of GaAs wires by an electron beam induced selective growth technique, for the first time. In situ irradiation of the electron beam, with simultaneous supply of tri‐methyl‐gallium (TMG) and cracked AsH3, formed a GaAs quasiquantum wire structure as narrow as 300 nm selectively. Auger analysis and dependence of the growth on source materials and types of substrate suggest that the selective growth results from the decomposition of TMG by the electron beam irradiation.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Kk Vapor phase epitaxy; growth from vapor phase
61.80.Fe Electron and positron radiation effects
82.50.Kx Processes caused by X-rays or γ-rays

Coupled‐stripe in‐phase operation of planar native‐oxide index‐guided AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum‐well heterostructure laser arrays

F. A. Kish, S. J. Caracci, N. Holonyak, P. Gavrilovic, K. Meehan, and J. E. Williams

Appl. Phys. Lett. 60, 71 (1992); http://dx.doi.org/10.1063/1.107378 (3 pages) | Cited 9 times

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High‐performance, coupled‐stripe, planar, index‐guided AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum‐well heterostructure (QWH) laser arrays are fabricated by the formation of a relatively thick, current‐blocking, native oxide from the high‐gap AlyGa1−yAs upper confining layer between active stripes. Precise control of the thickness of the native oxide layer between emitters provides a means of varying the index step between stripes, and permits tailoring of the optical profile to produce in‐phase operation. The 10‐stripe coupled QWH laser arrays (∼3‐μm‐wide stripes on 4 μm centers) exhibit near‐diffraction‐limited, single‐lobed, far‐field patterns with low continuous (cw) thresholds (∼45 mA) and cw output powers (total external differential quantum efficiency ≳50%) of over 100 mW per uncoated facet.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
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