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9 Mar 1992

Volume 60, Issue 10, pp. 1153-1267

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Nonlinear refractive index measurement in chalcogenide‐glass fibers by self‐phase modulation

Masaki Asobe, Ken’ichi Suzuki, Terutoshi Kanamori, and Ken’ichi Kubodera

Appl. Phys. Lett. 60, 1153 (1992); http://dx.doi.org/10.1063/1.107388 (2 pages) | Cited 27 times

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Nonlinear refractive index (n2) of chalcogenide‐glass (As2S3) fibers has been evaluated for the first time from spectral broadening due to self‐phase modulation. The obtained value of n2 was 1.7×10−14 (cm2/W) which is two orders of magnitude higher than the value with silica‐glass fiber. This large n2 value is useful in reducing switching power and size when fiber is used for all‐optical switches.
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42.81.Cn Fiber testing and measurement of fiber parameters
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.An Optical susceptibility, hyperpolarizability
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Spatial coherence of a repetitive laser‐plasma point x‐ray source in the water window spectral region

H. Daido, I. C. E. Turcu, I. N. Ross, J. G. Watson, M. Steyer, R. Kaur, M. S. Schulz, and M. Amit

Appl. Phys. Lett. 60, 1155 (1992); http://dx.doi.org/10.1063/1.107389 (3 pages) | Cited 10 times

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We propose and demonstrate a coherent laser‐plasma point x‐ray source in the water window spectral region operating at a repetition rate of up to 100 Hz. The emission from the 10‐μm‐diameter source is filtered to generate monochromatic radiation at a 3.37 nm wavelength. Soft x‐ray fringes of the Young’s interference experiment were obtained with a visibility of 0.62±0.1 with a slit pair of 10.5 μm separation at a distance of 31.7 cm from the source. The source can be used to take either a hologram or transmission scanning x‐ray micrograph within a reasonable exposure time of several minutes.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
42.40.Eq Holographic optical elements; holographic gratings
07.85.-m X- and γ-ray instruments

Epoxy‐amine polymer waveguide containing nonlinear optical molecules fabricated by chemical vapor deposition

Satoshi Tatsuura, Wataru Sotoyama, and Tetsuzo Yoshimura

Appl. Phys. Lett. 60, 1158 (1992); http://dx.doi.org/10.1063/1.107390 (3 pages) | Cited 3 times

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Epoxy‐amine polymer thin films are fabricated by chemical vapor deposition using an aliphatic amine, which is very reactive to epoxy groups and has nonlinear optical properties. A transparent thin film is obtained by controlling the temperature and surface condition of the substrate, and the epoxy‐amine ratio during deposition. The refractive index of the film is 1.648. A slab waveguide is constructed by depositing the polymer film on SiO2 which is formed by thermal oxidation of a Si wafer. End coupling of a He‐Ne laser (632.8 nm) launches a well‐propagating beam. This is the first case in which a polymer waveguide is fabricated by dry processing.
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42.79.Gn Optical waveguides and couplers
42.70.Jk Polymers and organics
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Mode locking of room‐temperature cw thulium and holmium lasers

Frank Heine, Ernst Heumann, Günter Huber, and Kenneth L. Schepler

Appl. Phys. Lett. 60, 1161 (1992); http://dx.doi.org/10.1063/1.107391 (2 pages) | Cited 8 times

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We report the generation of ultrashort light pulses from cw‐pumped Cr, Tm:YAG and Cr, Tm, Ho:YAG lasers actively mode‐locked by an acousto‐optic modulator. The pulse duration obtained from Tm:YAG was 45 ps which was approximately two times the bandwidth limit. Mode‐locked pulses less than 800 ps were also produced in Cr, Tm, Ho:YAG.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Fc Modulation, tuning, and mode locking

Origin of the nonlinear index saturation in the band tail absorption region of GaAs/AlGaAs multiple quantum wells

B. G. Sfez, J. L. Oudar, R. Kuszelewicz, and D. Pellat

Appl. Phys. Lett. 60, 1163 (1992); http://dx.doi.org/10.1063/1.107392 (3 pages) | Cited 3 times

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The saturation behavior of the nonlinear index δnNL in the band tail of GaAs/AlGaAs multiple quantum wells is experimentally studied in quasi‐steady state and in a low absorption region (below 300 cm−1), where dispersive optical bistability is observed. Measurements at different detunings from the exciton resonance allow us to study the absorption dependence of the saturation parameters. The saturation intensity IS is found inversely proportional to the linear absorption coefficient, while the saturating nonlinear index δnS is approximately constant. This evidences that the nonlinear index saturation is due to a saturation of the carrier density versus light intensity, due to the saturation of the band tail absorption itself.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.55.Px Semiconductor lasers; laser diodes

Infrared response of Pt/Si/ErSi1.7 heterostructure: Tunable internal photoemission sensor

L. Pahun, Y. Campidelli, F. Arnaud d’Avitaya, and P. A. Badoz

Appl. Phys. Lett. 60, 1166 (1992); http://dx.doi.org/10.1063/1.107393 (3 pages) | Cited 43 times

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We present the first internal photoemission response of a metal‐Si‐metal heterostructure. Using the Pt/Si/ErSi1.7 system, we show that the photoresponse of this new device can be strongly modified when a bias of a few hundred mV is applied between the two metallic electrodes: the cutoff wavelength is shifted from 1.4 μm to above 5 μm, and the quantum efficiency is increased up to 5% at 1.2 μm wavelength when a positive bias is applied to the front Pt electrode. These dramatic changes are attributed to a modulation of the effective potential barrier experienced by the photoexcited carriers when crossing the Si film.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Sx Metal-semiconductor-metal structures
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.30.+y Surface double layers, Schottky barriers, and work functions

Ultrasonic Newton’s rings

David K. Hsu and Vinay Dayal

Appl. Phys. Lett. 60, 1169 (1992); http://dx.doi.org/10.1063/1.107394 (3 pages) | Cited 1 time

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Interference fringes due to bondline thickness variation were observed in ultrasonic scans of the reflected echo amplitude from the bondline of adhesively joined aluminum skins. To demonstrate that full‐field interference patterns are observable in point‐by‐point ultrasonic scans, an optical setup for Newton’s rings was scanned ultrasonically in a water immersion tank. The ultrasonic scan showed distinct Newton’s rings whose radii were in excellent agreement with the prediction.
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43.58.+z Acoustical measurements and instrumentation
68.60.-p Physical properties of thin films, nonelectronic

Direct modulation of blue radiation from frequency‐doubled AlGaAs laser diode using the electro‐optic effect in a KNbO3 nonlinear crystal

T. Senoh, Y. Fujino, Y. Tanabe, M. Hirano, M. Ohtsu, and K. Nakagawa

Appl. Phys. Lett. 60, 1172 (1992); http://dx.doi.org/10.1063/1.107395 (3 pages) | Cited 4 times

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A novel method for modulating frequency‐doubled blue radiation from an AlGaAs laser diode was developed utilizing the electro‐optic effect in a KNbO3 nonlinear crystal. Stable blue radiation was obtained from an external ring resonant cavity containing a KNbO3 crystal. The weakly excited counterpropagating mode in the resonant cavity was re‐injected into the laser diode to establish self‐locking. Nearly 100% intensity modulation was observed when a 3 kV/cm ac electric field was applied parallel to the c axis of the KNbO3 crystal.
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42.79.Hp Optical processors, correlators, and modulators
42.60.Fc Modulation, tuning, and mode locking
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Differentiation of topographical and chemical structures using an interfacial force microscope

Stephen A. Joyce, J. E. Houston, and T. A. Michalske

Appl. Phys. Lett. 60, 1175 (1992); http://dx.doi.org/10.1063/1.107396 (3 pages) | Cited 5 times

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The forces between a tungsten tip and a self‐assembled monolayer of hexadecylthiol (C16H33SH) on a thin gold film have been studied using a newly developed interfacial‐force microscope. Imaging of the surface, combined with spatially resolved force versus separation measurements, allow for the distinction of topographical and chemical features of the surface. Several distinct regions are observed for this system. The first, characterized by a very weak interfacial interaction between tip and sample, is representative of the self‐assembled monolayer. The other regions show relatively strong, long‐range attractive forces, which are associated with gross defects in the film.  
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Dv Composition, segregation; defects and impurities
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
07.07.-a General equipment

Significant improvement in depth resolution of Cr/Ni interfaces by secondary ion mass spectrometry profiling under normal O2+ ion bombardment

Kyung Joong Kim and Dae Won Moon

Appl. Phys. Lett. 60, 1178 (1992); http://dx.doi.org/10.1063/1.107397 (3 pages) | Cited 8 times

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Depth resolution in secondary ion mass spectrometry profiling of Cr/Ni multilayered thin films was studied as a function of ion beam incidence angle. As the incidence angle from the surface normal increased from 30° to 80°, the depth resolution improved as generally observed. However, between incidence angles of 20° and 30°, the depth profiling resolution improved abruptly and significantly. The best depth resolution of about 6 nm was obtained for normal incident O2+ ion beams for all the Cr/Ni interfaces of depth down to 500 nm. It was found that the observed variation of depth resolution was very well related to the surface topographic development, which was very sensitive to the incidence angle of the ion beam.
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07.75.+h Mass spectrometers
61.80.Jh Ion radiation effects
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Nanometer‐scale electrochemical deposition of silver on graphite using a scanning tunneling microscope

Wenjie Li, Jorma A. Virtanen, and Reginald M. Penner

Appl. Phys. Lett. 60, 1181 (1992); http://dx.doi.org/10.1063/1.107398 (3 pages) | Cited 48 times

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Silver pillars, 10–30 nm in diameter and 4–10 nm in height, were generated on graphite surfaces using a scanning tunneling microscope. These structures were produced following the application of tip(+), 6 V×50 μs bias pulses in dilute, aqueous silver fluoride. A pit on the graphite surface is formed during the first 5μs of the pulse, followed by nucleation and electrochemical deposition of silver at this pit. This two‐step mechanism allows silver pillars to be located with a high lateral precision on the graphite surface−independent of the proximity of the tip to preexisting nucleation sites such as step edges.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.40.Ns Metal-nonmetal contacts
82.45.-h Electrochemistry and electrophoresis
68.35.B- Structure of clean surfaces (and surface reconstruction)

Mechanical strength of silicon crystals with oxygen and/or germanium impurities

Tetsuo Fukuda and Akira Ohsawa

Appl. Phys. Lett. 60, 1184 (1992); http://dx.doi.org/10.1063/1.107399 (3 pages) | Cited 10 times

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Using an indentation test at 900 °C, we studied the mechanical strength of epitaxial and Czochralski (CZ) silicon single crystals with germanium concentrations between 1018 and 1021 cm−3. The strength of CZ crystals is found to increase for germanium concentrations above 6×1019 cm−3 and that of epitaxial crystals independent of germanium concentrations below 3×1020 cm−3. Yamada‐Kaneta, Kaneta, and Ogawa [16th International Conference on Defects in Semiconductors (Lehigh University, Bethlehem, Pennsylvania, 1991), p. 286] report that in CZ crystals alloyed with germanium in excess of 6×1019 cm−3, oxygen atoms occupy the interstitial sites next to the germanium atoms. A model compatible with the observations is that the increased strength is due to dislocation immobilization by oxygen atoms adjacent to germanium atoms.
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62.20.-x Mechanical properties of solids
61.72.uf Ge and Si
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Polarization reversal and high dielectric permittivity in lead magnesium niobate titanate thin films

K. R. Udayakumar, J. Chen, P. J. Schuele, L. E. Cross, V. Kumar, and S. B. Krupanidhi

Appl. Phys. Lett. 60, 1187 (1992); http://dx.doi.org/10.1063/1.107400 (3 pages) | Cited 29 times

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Ferroelectric thin films of the morphotropic phase boundary composition in the lead magnesium niobate‐lead titanate solid solution system were fabricated through the sol‐gel spin‐on technique. The rapid thermally annealed films showed a very high dielectric constant of 2900, with a concomitant low dissipation factor of 0.02; the films were hysteretic with a saturation remanence of 11 μC/cm2 and a coercive voltage of 0.5 V. The storage charge density observed at 5 V was 210 fC/μm2. These films merit consideration for potential application in ferroelectric nonvolatile random access memories (NVRAMs), and in high bit density metal‐oxide‐semiconductor (MOS) dynamic random access memories (DRAMs).
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Microscopic nature of the metal to insulator phase transition induced through electroreduction in single‐crystal KNbO3

K. Szot, W. Speier, and W. Eberhardt

Appl. Phys. Lett. 60, 1190 (1992); http://dx.doi.org/10.1063/1.107401 (3 pages) | Cited 24 times

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Electroreduction of the crystalline perovskite KNbO3 results in a change of the electrical resistivity by about 12–14 orders of magnitude from insulating to semimetallic at room temperature. This change is completely reversible through oxidation of the material. The semimetallic phase is characterized by a three‐dimensional network of planar defects extending throughout the crystal. We have characterized the microscopic nature of this semimetallic phase by photoelectron spectroscopy after preparing the surface of the crystal to the same state. We also present evidence that at temperatures below 100 K these electroreduced materials may even become superconducting.
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72.80.Ga Transition-metal compounds
74.20.Mn Nonconventional mechanisms
74.20.Rp Pairing symmetries (other than s-wave)
74.70.-b Superconducting materials other than cuprates
66.30.Qa Electromigration

Anion‐assisted pulsed laser deposition of lead zirconate titanate films

R. E. Leuchtner, K. S. Grabowski, D. B. Chrisey, and J. S. Horwitz

Appl. Phys. Lett. 60, 1193 (1992); http://dx.doi.org/10.1063/1.107402 (3 pages) | Cited 19 times

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A modification of the conventional pulsed laser deposition technique is presented whereby a low energy (≤0.5 eV) electron emitting filament was placed over the substrate during deposition. Using this experimental arrangement, it was possible to deposit oriented films of the ferroelectric perovskite PbZr0.52Ti0.48O3 on 〈100〉 MgO substrates at 550 °C. When optimized in terms of emission current, the use of the filament caused a decrease by six orders of magnitude in the ratio of a nonferroelectric pyrochlore phase relative to the ferroelectric perovskite phase. The surface morphology concomitantly changed from porous to essentially smooth as the electron emission current was increased. The surface reaction of oxygen anions generated by electron attachment to oxygen molecules is believed to be responsible for these crystallographic and morphological changes.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Highly selective sputtering of silicon from TiSi2 at elevated temperature

J. M. E. Harper, S. Motakef, and D. Moy

Appl. Phys. Lett. 60, 1196 (1992); http://dx.doi.org/10.1063/1.107403 (3 pages) | Cited 2 times

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We demonstrate almost 100% selective sputtering of silicon from TiSi2 using a combination of low energy ion bombardment and elevated temperature. TiSi2 was prepared by annealing 1000‐Å‐thick Ti on (100)Si in He at 635 °C for 30 min to produce 2300‐Å thick TiSi2. Ion beam etching was carried out using 300 eV argon with a flux of 0.27 mA/cm2 at temperatures from 33 to 700 °C. In situ sheet resistance measurements were used to monitor the decrease in silicide thickness as a function of time. Near room temperature, ion etching causes normal sputtering of the silicide. However, at temperatures of 500–700 °C, the sheet resistance remains almost unchanged during ion beam etching. Analysis by Rutherford backscattering, with and without Xe markers, shows that Si atoms sputtered from the surface of these high‐temperature samples are continuously replaced by Si diffusing from beneath the silicide layer. The thickness and composition of the silicide remain almost unchanged, but the dramatic change in sputtering behavior shows that the surface is enriched in Si. Compared with the room‐temperature values, the absolute sputtering yield of Ti at 500–700 °C is decreased by a factor of 5, and the yield of Si is increased by a factor of 2. The net result is almost 100% selective sputtering of silicon.
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81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
66.30.-h Diffusion in solids
68.60.Dv Thermal stability; thermal effects

Epitaxial growth of MgO on GaAs(001) for growing epitaxial BaTiO3 thin films by pulsed laser deposition

Keiichi Nashimoto, David K. Fork, and Theodore H. Geballe

Appl. Phys. Lett. 60, 1199 (1992); http://dx.doi.org/10.1063/1.107404 (3 pages) | Cited 97 times

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MgO buffer layers were deposited on GaAs by pulsed laser deposition for epitaxial growth of BaTiO3. MgO was grown epitaxially on GaAs for the first time; the orientation is (001) on GaAs(001). The best crystallographic quality was obtained at 350 °C in 5×10−6 Torr O2. BaTiO3 films with (001) orientation grew epitaxially on MgO/GaAs. The in‐plane epitaxial relationship was BaTiO3[100]∥ MgO[100]∥ GaAs[100] in spite of a large lattice mismatch (25.5%) between MgO and GaAs.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
77.55.-g Dielectric thin films
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Kinetic diffusion model of ion‐implanted boron during rapid thermal annealing

H. Kinoshita and D. L. Kwong

Appl. Phys. Lett. 60, 1202 (1992); http://dx.doi.org/10.1063/1.107405 (3 pages) | Cited 2 times

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The diffusion of ion‐implanted B during rapid thermal annealing (RTA) has been modeled by studying the reaction kinetics between eight species including boron, Si self‐interstitials, and vacancies in multiple‐charge states. Monte Carlo generated point‐defect profiles are used to include the effects of ion‐implant damage on the enhanced diffusion of B. Accurate diffusion modeling of high‐dose implantation has been achieved with the addition of an extended defect model. The extended defect model describes the absorption and release of Si interstitials corresponding to extended defect formation and annealing, which give rise to the transient‐enhanced diffusion of B. Good agreement between the model and experimental results for RTA of ion‐implanted B at a dose range of 1×1014–2×1015 cm−2 has been obtained.
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66.30.J- Diffusion of impurities
61.72.uf Ge and Si
61.80.Jh Ion radiation effects

Thermally activated dopant diffusion in crystalline silicon at 200 °C?

P. Pichler and M. Orlowski

Appl. Phys. Lett. 60, 1205 (1992); http://dx.doi.org/10.1063/1.107406 (3 pages) | Cited 1 time

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Recently, anomalous, asymmetric diffusion of dopants in silicon during silicidation at temperatures as low as 200 °C has been reported. This observation has not been explained satisfactorily so far and therefore presents, a formidable challenge to present Fickian‐type diffusion theories. In this letter, the structure of the asymmetric diffusion is analyzed and it is shown that the anomalous diffusion can be consistently explained by postulating the existence of an inhomogeneous stress field as an external driving force in conjunction with stress relaxation mechanisms due to the silicon self‐interstitial diffusion. However, at the same time, it is demonstrated conclusively that the hypothesized diffusion in stress fields cannot be effectuated by thermal activation.
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66.30.J- Diffusion of impurities
61.72.uf Ge and Si
81.65.-b Surface treatments

X‐ray photoelectron spectroscopy analysis of photostimulated chemical vapor deposition hydrogenated amorphous silicon/amorphous aluminum oxide

K. Uwasawa, F. Ishihara, and S. Matsumoto

Appl. Phys. Lett. 60, 1208 (1992); http://dx.doi.org/10.1063/1.107407 (3 pages)

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We have fabricated multilayer structures consisting of hydrogenated amorphous silicon (a‐Si:H) and amorphous aluminum oxide (a‐AlxO1−x) by photostimulated chemical vapor deposition (photo‐CVD) using ArF excimer laser. X‐ray photoelectron spectroscopy (XPS) analysis of the multilayer samples demonstrated that the a‐Si:H/a‐AlxO1−x heterostructure grown by the photo‐CVD had an ideally sharp interface and no mixing layer. The XPS valence‐band spectrum for a‐AlxO1−x deposited on a‐Si:H also determined the valence‐band offset at about 4 eV in the a‐Si:H/a‐AlxO1−x superlattices.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
79.60.-i Photoemission and photoelectron spectra

Buried heterostructure laser fabricated using reactive ion etching and gas source molecular beam epitaxy

J.‐L. Liévin, L. Le Gouézigou, D. Bonnevie, F. Gaborit, F. Poingt, and F. Brillouet

Appl. Phys. Lett. 60, 1211 (1992); http://dx.doi.org/10.1063/1.107408 (3 pages) | Cited 3 times

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Buried heterostructure lasers fabricated using reactive ion etching for stripe definition and gas source molecular beam epitaxy for blocking layer regrowth are presented for the first time. The structure design includes, in particular, a nonselective epitaxial regrowth step as well as a III‐V material lift‐off. Preliminary results show continuous wave operation with threshold currents of 43 mA and maximum output power of 17 mW per facet. This process is, in particular, very well suited for integration purposes and high yield 2 in. wafer processing.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.65.-b Surface treatments
42.82.Cr Fabrication techniques; lithography, pattern transfer

Shallow, titanium‐silicided p+n junction formation by triple germanium amorphization

Christine Dehm, J. Gyulai, and H. Ryssel

Appl. Phys. Lett. 60, 1214 (1992); http://dx.doi.org/10.1063/1.107409 (3 pages) | Cited 10 times

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TiSi2 contacts were fabricated using self‐aligned silicidation technology by ion‐beam mixing with germanium. Shallow p+n junctions of 170 nm depth with low leakage currents of 10 nA and an ideality factor of 1.08 could be formed by 13 keV boron implantation in silicided silicon substrates preamorphized by germanium implantation. For germanium amorphization, three implantation energies were chosen to check the influence of the overlap between implantation produced interstitial‐rich and vacancy‐rich areas on transient diffusion of the boron and on formation of end‐of‐range disorder. Using this triple germanium amorphization, end‐of‐range defect concentrations could be appreciably reduced compared to conventional substrate amorphization, leading also to improved electrical characteristics and to somewhat shallower junction depths.
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85.40.Hp Lithography, masks and pattern transfer
85.30.Kk Junction diodes
61.72.uf Ge and Si
73.40.Ns Metal-nonmetal contacts

Metalorganic vapor phase epitaxical growth and 1.5‐μm laser fabrication using ethyldimethylindium, tertiarybutylphosphine, and tertiarybutylarsine

Matsuyuki Ogasawara, Kenji Sato, and Yasuhiro Kondo

Appl. Phys. Lett. 60, 1217 (1992); http://dx.doi.org/10.1063/1.107410 (3 pages) | Cited 5 times

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High‐quality InGaAsP lattice matched to InP was grown by low‐pressure metalorganic vapor phase epitaxy using ethyldimethylindium (EDMIn), tertiarybutylphosphine (TBP), and tertiarybutylarsine (TBA). The background carrier concentrations of undoped InP and InGaAs were as low as 1.5×1015 and 2.2×1015 cm−3, respectively. Good compositional control of In‐GaAsP was also possible. The performance of the double heterostructure wafers employed as lasers as characterized by threshold current density, internal loss, and internal quantum efficiency. The threshold current density for a 300‐μm cavity was as low as 2.0 kA/cm2. In addition, ridge‐waveguide distributed feedback lasers were successfully fabricated. These results show that EDMIn, TBP, and TBA might be used to replace conventional sources for growing InGaAsP/InP lasers.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
42.55.Px Semiconductor lasers; laser diodes

Transient behavior of organic thin film electroluminescence

Chishio Hosokawa, Hiroshi Tokailin, Hisahiro Higashi, and Tadashi Kusumoto

Appl. Phys. Lett. 60, 1220 (1992); http://dx.doi.org/10.1063/1.107411 (3 pages) | Cited 101 times

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Transient behavior for an organic thin film electroluminescence (EL) cell with ITO/triphenylamine derivative/tris (8‐hydroxyquinolino) aluminum (Alq)/Mg:Ag structure was observed by short voltage pulse measurements. The EL response was of the order of 10−7 s, and faster than that previously measured by Tang et al. [J. Appl. Phys. 65, 3610 (1989)]. In these measurements, we could observe carrier transit time. Then we concluded this carrier transit time should be attributed to that of electrons in Alq layer and the electron mobility of (5±2)×10−5 cm2/V s was obtained above the electric field of 1 MV/cm.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
72.20.Fr Low-field transport and mobility; piezoresistance
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

High temperature thermally stable implant isolation for GaAs via void formation

Kei‐Yu Ko, Samuel Chen, S.‐Tong Lee, and G. Braunstein

Appl. Phys. Lett. 60, 1223 (1992); http://dx.doi.org/10.1063/1.107412 (3 pages) | Cited 1 time

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A new method of forming thermally stable high‐resistivity regions is developed for device isolation in GaAs. For Al+‐implanted epitaxial‐layer structures, the sheet resistivity increases by about six orders of magnitude from the as‐grown values, after annealing in the 700–900 °C range. This increase in resistivity is shown to correlate with the formation of voids. The creation of high resistivity via void formation is different from the conventional damage‐induced isolation by H or O implantation. This type of isolation becomes ineffective once the lattice is annealed at high temperatures due to the annealing out of lattice damage between 400 and 700 °C. In contrast, voids are stable at high temperatures. The potential advantages of using such defects for device isolation will be discussed.
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61.72.Bb Theories and models of crystal defects
71.55.Eq III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
61.80.Jh Ion radiation effects
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