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16 Mar 1992

Volume 60, Issue 11, pp. 1277-1404

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Asymmetric AlGaAs quantum wells for second‐harmonic generation and quasiphase matching of visible light in surface emitting waveguides

P. J. Harshman and S. Wang

Appl. Phys. Lett. 60, 1277 (1992); http://dx.doi.org/10.1063/1.107342 (3 pages) | Cited 23 times

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We present an analytical calculation of the second‐order susceptibility for second‐harmonic generation of visible radiation in asymmetric AlGaAs quantum wells. The calculation suggests that a second‐order susceptibility magnitude equal to that of bulk GaAs can be achieved in optimally designed wells. The sign of the second‐order susceptibility can be changed by inverting the well asymmetry so that quasiphase matching of the second‐harmonic generation is possible. Simulation of a multiquantum well surface emitting waveguide designed for quasiphase‐matched second‐harmonic generation indicates that second‐harmonic conversion efficiency can be improved by over a factor of 100.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Nv Optical frequency converters
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
85.30.De Semiconductor-device characterization, design, and modeling

High‐brightness diode‐laser‐pumped semiconductor heterostructure lasers

H. Q. Le, W. D. Goodhue, and S. Di Cecca

Appl. Phys. Lett. 60, 1280 (1992); http://dx.doi.org/10.1063/1.107316 (3 pages) | Cited 3 times

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A novel, generic design for diode‐pumped lasers and amplifiers utilizing semiconductor heterostructures has been implemented in the InGaAs/GaAs/AlGaAs material system. The spatial and spectral characteristics of these heterostructures are optimized to provide low output beam divergence, low aspect ratio, high efficiency, and low threshold. A pump‐power‐limited cw output of 0.58 W was obtained with diode‐array pumping, and a peak power of 33 W per facet was achieved with pulsed Ti:Al2 O3 laser pumping. A near‐diffraction‐limited output beam with a divergence of 14° by 3.4° has been obtained.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Highly efficient quasi‐phase‐matched second‐harmonic generation using a first‐order periodically domain‐inverted LiTaO3 waveguide

Kiminori Mizuuchi and Kazuhisa Yamamoto

Appl. Phys. Lett. 60, 1283 (1992); http://dx.doi.org/10.1063/1.107317 (3 pages) | Cited 46 times

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We report blue‐light generation using a first‐order quasi‐phase matched second‐harmonic generation (QPMSHG) in LiTaO3 waveguide. A first‐order periodically domain‐inverted structure can be fabricated using a quick heat‐treatment technique. We have examined the dependence of the depth of the fabricated domain‐inverted region on its width, which critically affects the conversion efficiency of SHG, and designed an optimum domain‐inverted structure for the QPMSHG device. As a result, 15 mW of blue light was generated for a conversion efficiency of 10.3%.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.72.Bj Visible and ultraviolet sources
42.79.Nv Optical frequency converters

Passive stabilization of a synchronously pumped external‐cavity surface‐emitting InGaAs/InP multiple quantum‐well laser by a coherent photon‐seeding technique

Diechi Sun and Yoshihisa Yamamoto

Appl. Phys. Lett. 60, 1286 (1992); http://dx.doi.org/10.1063/1.107318 (3 pages) | Cited 2 times

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A synchronously pumped external‐cavity surface‐emitting InGaAs/InP multiple quantum‐well laser was passively stabilized by a coherent photon‐seeding technique using an integrated output‐coupling mirror. Both pulse duration and spectral width were reduced significantly and the time‐bandwidth product was reduced by a factor of 30 to a near transform‐limited value.
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42.55.Px Semiconductor lasers; laser diodes
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.55.Rz Doped-insulator lasers and other solid state lasers

Large (14.5 dB) reduction of intensity noise from a semiconductor laser by amplitude‐phase decorrelation

Michael A. Newkirk and Kerry J. Vahala

Appl. Phys. Lett. 60, 1289 (1992); http://dx.doi.org/10.1063/1.107319 (3 pages)

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By the method of amplitude‐phase decorrelation, intensity noise from a distributed feedback semiconductor laser is passively reduced up to 14.5 dB below its intrinsic level. At high laser power, reduction to 1.3 dB above the photon shot noise level is observed. The results agree with a simple model incorporating a power‐independent source of phase noise in the laser rate equations.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Mi Dynamical laser instabilities; noisy laser behavior
42.50.Lc Quantum fluctuations, quantum noise, and quantum jumps

Periodic filaments in reflective broad area semiconductor optical amplifiers

M. Tamburrini, L. Goldberg, and D. Mehuys

Appl. Phys. Lett. 60, 1292 (1992); http://dx.doi.org/10.1063/1.107320 (3 pages) | Cited 21 times

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Filaments with a regular spacing of the order of 25 μm are experimentally observed in double‐pass broad area GaAlAs amplifiers for near normal injection angle. Their formation is attributed to nonlinear interaction between counterpropagating beams and Talbot self‐imaging.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
85.60.Jb Light-emitting devices

High speed operation of very low threshold strained InGaAs/GaAs double quantum well lasers

B. Zhao, T. R. Chen, Y. H. Zhuang, A. Yariv, J. E. Ungar, and S. Oh

Appl. Phys. Lett. 60, 1295 (1992); http://dx.doi.org/10.1063/1.107321 (3 pages) | Cited 3 times

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Very low threshold current strained In0.2Ga0.8As/GaAs double quantum well buried‐heterostructure lasers have been fabricated by a hybrid metalorganic chemical vapor phase deposition and liquid phase epitaxy regrowth technique. The modulation bandwidths were compared in lasers of different active strip widths, cavity lengths, and facet reflectivities in order to achieve modest high‐modulation bandwidth at low operating current. A 5 GHz 3 dB modulation bandwidth is demonstrated at a current of 2.1 mA in a laser with a threshold current of 0.5 mA.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Operation of the sapphire Cerenkov laser

E. E. Fisch and J. E. Walsh

Appl. Phys. Lett. 60, 1298 (1992); http://dx.doi.org/10.1063/1.107322 (3 pages) | Cited 8 times

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First operation of a sapphire‐based Cerenkov free electron laser is reported. It is a tunable source of coherent millimeter and submillimeter radiation. The phase velocity of light in sapphire is about one‐tenth of that in free space so that Cerenkov radiation is obtained at modest electron beam energies. In addition to its role as a Cerenkov coupler, the sapphire forms a high Q resonator obviating external mirrors. The spontaneous Cerenkov emission is well‐confined by this resonator and can build to watts of power. Measured tuning and threshold currents are presented and compared with the predictions of free electron laser theory.
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41.60.Cr Free-electron lasers
41.60.Bq Cherenkov radiation
42.60.-v Laser optical systems: design and operation

Beam profile reflectometry: A new technique for dielectric film measurements

Allan Rosencwaig, Jon Opsal, D. L. Willenborg, S. M. Kelso, and J. T. Fanton

Appl. Phys. Lett. 60, 1301 (1992); http://dx.doi.org/10.1063/1.107323 (3 pages) | Cited 29 times

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We describe a new technique for measuring the thickness and optical constants of dielectric, semiconducting, and thin metal films. Beam profile reflectometry provides excellent precision for films as thin as 30 Å and as thick as 20 000 Å. The technique is also capable of simultaneous 2 and 3 parameter measurements and it performs all measurements with a submicron spot size.
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07.60.Hv Refractometers and reflectometers
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
77.55.-g Dielectric thin films
81.70.-q Methods of materials testing and analysis

Laser‐scattering measurement of temperature profiles of a free‐burning arc

A. B. Murphy, A. J. D. Farmer, and J. Haidar

Appl. Phys. Lett. 60, 1304 (1992); http://dx.doi.org/10.1063/1.107324 (3 pages) | Cited 20 times

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A method of determining the temperature of a thermal plasma by laser scattering, without frequency resolution of the scattered signal, is introduced. The method gives valid measurements of the gas temperature across the complete diameter of a free‐burning argon arc, even in regions in which local thermodynamic equilibrium does not exist. The results show that the maximum temperature in a 100 A arc, with a 60° conical thoriated‐tungsten cathode, is over 18 000 K, in agreement with our previous spectroscopic measurements.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.80.Mg Arcs; sparks; lightning; atmospheric electricity

Initial stages of native oxide growth on hydrogen passivated Si(111) surfaces studied by scanning tunneling microscopy

U. Neuwald, H. E. Hessel, A. Feltz, U. Memmert, and R. J. Behm

Appl. Phys. Lett. 60, 1307 (1992); http://dx.doi.org/10.1063/1.107325 (3 pages) | Cited 39 times

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We show by scanning tunneling microscopy (STM) imaging that native oxide growth in moist air on hydrogen terminated Si(111) 1×1 surfaces begins by continuing formation of small oxide nuclei, 10–20 Å in diameter, in the topmost Si layer. Their statistical distribution on the flat terraces points to a homogeneous nucleation process. Oxidation is extremely slow; after about 800 h only one complete monolayer is oxidized. In addition, a small number of three‐dimensional oxide nuclei, several layers deep and 50–100 Å in width, are formed at step edges as a minority species, which may be related to surface defects or contaminations.
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81.65.-b Surface treatments
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
68.55.-a Thin film structure and morphology

Cathodoluminescence investigation of impurities and defects in single crystal diamond grown by the combustion‐flame method

R. J. Graham and K. V. Ravi

Appl. Phys. Lett. 60, 1310 (1992); http://dx.doi.org/10.1063/1.107326 (3 pages) | Cited 33 times

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Cathodoluminescence (CL) in a transmission electron microscope has been used to investigate impurities and defects in single crystals in diamond films grown by the combustion‐flame method and correlate them with the microstructure. Nitrogen was present in a number of different impurity defect forms; band A emission was correlated with dislocations while the defect giving rise to the 575 nm vibronic band was the only defect observed in fault‐free crystal. Several other nitrogen‐related defects were also observed to a lesser extent. The spatial distribution of these defects varied greatly and residual stresses in the 0.7–1.8 GPa range were estimated. In one single crystal, the relative intensities of the bands in the CL spectra acquired at various locations suggest that dislocation density, though variable, is highest at the nucleation end.
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78.60.Hk Cathodoluminescence, ionoluminescence
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.30.-j Infrared and Raman spectra
78.40.-q Absorption and reflection spectra: visible and ultraviolet
71.55.-i Impurity and defect levels

Vapor pressure of Buckminsterfullerene

J. Abrefah, D. R. Olander, M. Balooch, and W. J. Siekhaus

Appl. Phys. Lett. 60, 1313 (1992); http://dx.doi.org/10.1063/1.107327 (2 pages) | Cited 107 times

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The vapor pressures of the fullerenes C60 and C70 have been measured over the temperature range 400–600 °C by the Knudsen‐effusion thermogravimetric technique. For C60, a heat of sublimation of 38±1 kcal/mol is obtained, and the value for C70 is 45±1 kcal/mol. The vapor pressure of C60 ranges from 1.8×10−5 and 1.4×10−2 Torr and that of C70 is between 1.4×10−5 and 8.7×10−3 Torr over the temperature range investigated. At 500 °C, the vapor pressure of C60 is about 1035 that of graphite. The entropy of vaporization of C60 obeys Trouton’s rule.
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65.20.-w Thermal properties of liquids
65.40.gd Entropy
64.70.Hz Solid-vapor transitions

Interface roughness scattering and electron mobility in quantum wires

J. Motohisa and H. Sakaki

Appl. Phys. Lett. 60, 1315 (1992); http://dx.doi.org/10.1063/1.107328 (3 pages) | Cited 27 times

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We have theoretically investigated the influence of interface roughness on the scattering and mobility of electrons in very thin quantum wires, where all the electrons are in the lowest subband. In particular, the magnitude and electron concentration dependence of mobility are studied and shown to depend sensitively on the correlation length Λ and amplitude Δ of roughness. It is found that interface roughness scattering is drastically suppressed as the electron concentration increases, as in the case of impurity scattering when a realistic set of roughness parameters is chosen for edge quantum wire structures. General criteria to achieve ultra‐high mobility in various quantum wire structures are also discussed.
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72.10.-d Theory of electronic transport; scattering mechanisms
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Bk General theory, scattering mechanisms

Hydrogen treatment effect on shallow and deep centers in GaSb

A. Y. Polyakov, S. J. Pearton, R. G. Wilson, P. Rai‐Choudhury, R. J. Hillard, X. J. Bao, M. Stam, A. G. Milnes, T. E. Schlesinger, and J. Lopata

Appl. Phys. Lett. 60, 1318 (1992); http://dx.doi.org/10.1063/1.107329 (3 pages) | Cited 17 times

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It is shown by spreading resistance and capacitance–voltage measurements that atomic hydrogen passivates shallow acceptors and donors in GaSb. Deep level passivation by hydrogen also occurs, as revealed by deep level transient spectroscopy measurements on Schottky diode structures. Effective diffusion coefficients for hydrogen were determined for both n+ and p+ GaSb; in the former case the diffusion is thermally activated with the relationship DH=3.4×10−5e−0.55 eV/kT, whereas in p+ material DH=1.5×10−6e−0.45 eV/kT over the temperature range 100–250 °C. Reactivation of passivated shallow and deep levels occurs for temperatures of 250–300 °C.
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71.55.Eq III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
66.30.Lw Diffusion of other defects

Structure of the stepped Si/SiO2 interface after thermal oxidation: Investigations with scanning tunneling microscopy and spot‐profile analysis of low‐energy electron diffraction

G. J. Pietsch, U. Köhler, O. Jusko, M. Henzler, and P. O. Hahn

Appl. Phys. Lett. 60, 1321 (1992); http://dx.doi.org/10.1063/1.107330 (3 pages) | Cited 19 times

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After wet chemical oxide removal and fast transfer into ultrahigh vacuum the Si(111)/SiO2 interface structure of wafers from semiconductor‐industrial processes (polishing, oxidation, annealing) is investigated with scanning tunneling microscopy (STM): Regular terrace arrays with atomic step height are visible with STM after technological ex situ preparation. The local step structure varies, kinks at step edges occur, and irregular islands are formed with increasing oxide thickness and oxidation rate. The local STM information is compared to macroscopically averaged results provided by electron diffraction (spot‐profile analysis of low‐energy electron diffraction).
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.-b Surface treatments
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Excess tunnel currents in AlGaAs/GaAs multiple quantum well infrared detectors

G. M. Williams, R. E. DeWames, C. W. Farley, and R. J. Anderson

Appl. Phys. Lett. 60, 1324 (1992); http://dx.doi.org/10.1063/1.107331 (3 pages) | Cited 28 times

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We present experimental evidence of excess tunnel current at low temperatures in AlGaAs/GaAs multiple quantum well infrared detectors that is not accounted for by existing theory. Prior discussions of current mechanisms in these detectors only take into account ideal device properties. For quantum well detectors with thick barrier layers, which are useful for infrared detection, the excess tunnel current component possesses the features of sequential resonant tunneling, i.e., temperature independence of the current, and saturation of the current at intermediate bias voltages with negative conductance oscillations. However, the current is orders of magnitude larger than theory predicts. Comparison with data reported by other groups shows the magnitude of the discrepancy is sample dependent. These results suggest that defects play an important role in determining the tunnel current magnitude. This current component is significant because it limits attainable detector performance at low temperatures for applications requiring operation in reduced infrared backgrounds.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Pz Photoconduction and photovoltaic effects

Observations of new misfit dislocation configurations and slip systems at ultrahigh stresses in the (Al)GaAs/InxGa1−xAs/GaAs(100) system

J. M. Bonar, R. Hull, J. F. Walker, and R. Malik

Appl. Phys. Lett. 60, 1327 (1992); http://dx.doi.org/10.1063/1.107332 (3 pages) | Cited 24 times

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We have observed new misfit dislocation configurations and slip systems in (Al)GaAs/InxGa1−xAs/GaAs(100) heterostructures for x≥0.4. Dislocations are observed running along 〈001〉 directions in the interface, which are inconsistent with conventional glide of misfit dislocations on {111} planes in the zincblende lattice. Diffraction contrast analysis in a transmission electron microscope (TEM) shows that these dislocations are of the edge type with b=a/2〈011〉, inclined at 45° to the interface. In situ TEM heating experiments reveal dislocation propagation velocities ∼tens of μm s−1 at 600 °C, suggesting that they are moving by glide, rather than climb. The only slip planes consistent with these observations are {101} planes inclined to the interface. This represents a new relaxation mechanism in highly strained semiconductor heterostructures.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Raman study of disorder and strain in epitaxial ZnSxSe1−x films on a GaAs substrate

Yoshihiko Kanemitsu, Aishi Yamamoto, Hitoshi Matsue, Yasuaki Masumoto, Shigeki Yamaga, and Akihiko Yoshikawa

Appl. Phys. Lett. 60, 1330 (1992); http://dx.doi.org/10.1063/1.107333 (3 pages) | Cited 3 times

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Quantitative characterization of disorder and strain in ZnSxSe1−x/GaAs lattice‐mismatched semiconductor heterostructures was successfully done by means of Raman spectroscopy. The alloy disorder and the phonon coherence length in epitaxial ZnSxSe1−x films were estimated from the Raman linewidth of the ZnSe‐like LO phonon by using a spatial correlation model. The strain due to the lattice mismatch near the interface between ZnSxSe1−x and GaAs was deduced from the linewidth of the GaAs LO phonon.
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78.30.Fs III-V and II-VI semiconductors
68.55.-a Thin film structure and morphology
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Evidence for a hole‐controlled photocurrent in hydrogenated amorphous silicon

M. Cuniot and N. Lequeux

Appl. Phys. Lett. 60, 1333 (1992); http://dx.doi.org/10.1063/1.107334 (3 pages) | Cited 1 time

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Significant differences in the experimental spectral responses and photocurrent‐voltage characteristics measured on hydrogenated amorphous silicon films when reversing the polarity or the illuminated side of the film are reported. A model is advanced which accounts for variations of the photocurrent with both photon energy and applied voltage. It provides an accurate determination in steady state of the mobility‐lifetime product for holes (μpτp=0.94±0.05×10−8 cm2/V) and predicts negative variations in the electron density upon illumination.  
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72.40.+w Photoconduction and photovoltaic effects
72.80.Ng Disordered solids
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Sx Metal-semiconductor-metal structures

Nature of band bending at semiconductor surfaces by contactless electroreflectance

X. Yin, Xinxin Guo, Fred H. Pollak, G. D. Pettit, J. M. Woodall, T. P. Chin, and C. W. Tu

Appl. Phys. Lett. 60, 1336 (1992); http://dx.doi.org/10.1063/1.107335 (3 pages) | Cited 17 times

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The nature of the band bending at semiconductor surfaces (and related carrier type) is an important materials parameter. We demonstrate that an electroreflectance mode which employs a capacitorlike configuration can conveniently be used for this evaluation in a contactless manner. Results will be presented on n‐ and p‐type bulk GaAs, semi‐insulating GaAs, nominally undoped In0.15Ga0.85As and n‐ and p‐type GaAs and InP structures with large, almost uniform electric fields.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.40.-q Absorption and reflection spectra: visible and ultraviolet

Thermal stability of GaAs (C)/InAs superlattices grown by metalorganic molecular beam epitaxy

C. R. Abernathy, P. W. Wisk, S. J. Pearton, W. S. Hobson, P. H. Fuoss, F. J. Lamelas, S. N. G. Chu, and F. Ren

Appl. Phys. Lett. 60, 1339 (1992); http://dx.doi.org/10.1063/1.107336 (3 pages) | Cited 5 times

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The thermal stability of GaAs(C)/InAs superlattices grown by metalorganic molecular beam epitaxy on InP substrates has been examined by Hall measurements, transmission electron microscopy, and high resolution x‐ray diffraction. These structures provide an ordered counterpart to a random In0.53Ga0.47As alloy, in which high concentration carbon doping is generally difficult to achieve. In a 43 period (23 Å GaAs/26 Å InAs) superlattice in which the GaAs was C‐doped and the InAs undoped an average hole concentration of 7×1019 cm−3 and hole mobility of 20 cm2 V−1 s−1 was achieved. Such structures are stable against rapid thermal annealing (10 s) up to 750 °C. An 850 °C/10 s anneal reduced the hole concentration to 1.5×1019 cm−3, accompanied by the onset of intermixing of the superlattice. The surface morphology of all but very thick (36 Å GaAs/40 Å InAs) period superlattice structures remained specular, even after 850 °C, 10 s annealing. These superlattices show properties suitable for use in a range of electronic and photonic devices, particularly InP‐based lasers and heterojunction bipolar transistors.
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68.60.Dv Thermal stability; thermal effects
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Observation of light emission from real‐space transfer devices

T. K. Higman, M. S. Hagedorn, Jihong Chen, and K. Y. Cheng

Appl. Phys. Lett. 60, 1342 (1992); http://dx.doi.org/10.1063/1.107337 (3 pages) | Cited 7 times

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Light emitters based on real‐space transfer devices can be brought about by several mechanisms. The most efficient of these is the injection of minority electrons across a semiconductor heterojunction into a p‐type collecting layer. So far, problems associated with the growth of p‐type collecting layers have hindered efforts in this area. In this letter we report on light emission caused by the real‐space transfer of majority electrons into an n‐type collecting layer. We propose a mechanism to account for this light which consists of hole creation by impact ionization of real‐space transferred electrons.
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85.30.Tv Field effect devices
85.60.Jb Light-emitting devices
73.50.Fq High-field and nonlinear effects
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Fabrication and characterization of ZnSe/GaAs heterostructure bipolar transistors grown by molecular beam epitaxy

Annette S. Glaeser, James L. Merz, Robert E. Nahory, and Maria C. Tamargo

Appl. Phys. Lett. 60, 1345 (1992); http://dx.doi.org/10.1063/1.107338 (3 pages) | Cited 3 times

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Fabrication of the first molecular beam epitaxy grown ZnSe/GaAs heterostructure bipolar transistor (HBT) is described. The ZnSe/GaAs heterointerface is attractive for the design of an Npn HBT since it combines a large valence band offset with a small conduction band offset. These initial devices had common emitter dc current gains of 16 at current densities of 1.6×104 A/cm2. Issues identified to be addressed further include a relatively high (1 K Ω) emitter‐base resistance and a large offset voltage (2.8 V) in the common emitter characteristic.
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85.30.Pq Bipolar transistors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Photoelectrochemical depth profiling of molecular beam epitaxy grown group III‐V heterostructures

C. Wei, K. Rajeshwar, K. Alavi, R. N. Pathak, and L. T. Wang

Appl. Phys. Lett. 60, 1348 (1992); http://dx.doi.org/10.1063/1.107339 (3 pages) | Cited 2 times

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A depth profiling technique is described for molecular beam epitaxy grown (Al,Ga)Al/GaAs heterostructures which combines photoelectrochemical layer‐by‐layer removal with analyses by photocurrent spectroscopy. The technique is illustrated for two types of samples having a graded and ‘‘flat’’ Al profile in the epilayer.
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68.55.-a Thin film structure and morphology
82.50.-m Photochemistry
81.65.-b Surface treatments
68.35.Dv Composition, segregation; defects and impurities
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