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6 Apr 1992

Volume 60, Issue 14, pp. 1649-1764

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Spatial distributions of x‐ray lasing spectral linewidth and electron density in a lithiumlike silicon plasma

Pei‐xiang Lu, Zheng‐quan Zhang, Zhi‐zhan Xu, Pin‐zhong Fan, Shi‐sheng Chen, and Bai‐fei Shen

Appl. Phys. Lett. 60, 1649 (1992); http://dx.doi.org/10.1063/1.107225 (3 pages) | Cited 7 times

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The spatial distribution of the spectral linewidth of lithiumlike silicon ions in the 5f‐3d transition line at 88.84 Å is presented in this letter, and it shows that Stark broadening is the dominant line‐broadening mechanism for lithiumlike Si11+ ions on recombination x‐ray lasers. Spatial distribution of the electron density of the x‐ray lasing gain medium is calculated using the linear Stark theory, which shows that the electron density is ∼1019/cm3 in the gain region. A large linewidth at the gain peak (i.e., at 450 μm from the target surface) is 0.21 Å and the corresponding electron density and population inversion are 2.9×1019/cm3 and 5.5×1016/cm3, respectively.
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42.55.Vc X- and γ-ray lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Temperature‐tunable, single frequency microcavity lasers fabricated from flux‐grown YCeAG:Nd

P. Gavrilovic, M. S. O’Neill, K. Meehan, J. H. Zarrabi, S. Singh, and W. H. Grodkiewicz

Appl. Phys. Lett. 60, 1652 (1992); http://dx.doi.org/10.1063/1.107226 (3 pages) | Cited 8 times

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Data are presented on a single‐frequency, diode‐pumped, microcavity YCeAG:Nd laser. The maximum output power was 45 mW in continuous operation, limited by the available pump power of 250 mW. The output was single‐frequency, TEM00 at all powers. The lasing frequency was continuously temperature‐tunable over a range greater than 180 GHz, with a stability of better than 10 MHz.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.-v Laser optical systems: design and operation

Thermally curable second‐order nonlinear‐optical polymer

Luping Yu, Waikin Chan, Srivatsan Dikshit, Zhenan Bao, Yongqiang Shi, and William H. Steier

Appl. Phys. Lett. 60, 1655 (1992); http://dx.doi.org/10.1063/1.107227 (3 pages) | Cited 11 times

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A thermally cross‐linkable, second‐order nonlinear optical (NLO) polymer containing ethynyl groups has been synthesized. The ethynyl groups in the polymer backbone can undergo thermal intramolecular or intermolecular reactions with amide groups to form heterocyclic structures or cross linkages. The thermal curing of the polymer can be simultaneously effected during electric poling and second‐harmonic generation measurements indicated that the cured polymers indeed showed high stability in dipole orientation; no obvious decay at room temperature for more than 1000 h. Long‐term stability of second‐harmonic coefficients was observed even at 90 °C, at least for 500 h.
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42.70.Jk Polymers and organics
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.-k Nonlinear optics
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

AlGaAs/GaAs‐based triangular‐shaped ring ridge lasers

A. Behfar‐Rad, J. M. Ballantyne, and S. S. Wong

Appl. Phys. Lett. 60, 1658 (1992); http://dx.doi.org/10.1063/1.107228 (3 pages) | Cited 13 times

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Triangular‐shaped ring ridge lasers (ridge trilasers) have been fabricated using quantum‐well semiconductor laser material. The spectra of these ridge trilasers show single‐wavelength operation above threshold confirming traveling‐wave behavior in these lasers. Unidirectional operation is reported based on asymmetry between the clockwise and counterclockwise directions, in contrast to conventional unidirectional operation in ring lasers based on magnetic techniques.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Electro‐optic polymer waveguide fabricated using electric‐field‐assisted chemical vapor deposition

Satoshi Tatsuura, Wataru Sotoyama, and Tetsuzo Yoshimura

Appl. Phys. Lett. 60, 1661 (1992); http://dx.doi.org/10.1063/1.107229 (3 pages) | Cited 7 times

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We describe the fabrication of an electro‐optic (EO) polymer channel waveguide using a new technique, electric‐field‐assisted chemical vapor deposition. A polymer film is deposited from epoxy and nonlinear optical (NLO) aliphatic amine using chemical vapor deposition under an electric field applied by slit electrodes on a thermally oxidized Si wafer, at room temperature. A clear propagating He‐Ne laser beam is observed along the electrode gap. The propagated beam’s near field pattern is bright for the TE mode, but very weak for the TM mode. This indicates the NLO side groups’ in‐plane alignment and the fabrication of a channel waveguide. The EO coefficient of this waveguide, measured in a Mach–Zehnder interferometer, is r11∼0.1 pm/V. The polymer channel waveguide, which is poled at room temperature after film deposition, shows no EO response. This means NLO molecules are actually aligned during polymerizing, not after.
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42.79.Gn Optical waveguides and couplers
42.70.Jk Polymers and organics
78.66.Qn Polymers; organic compounds
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Optical nonlinear responses of a quantum well photodiode with a non‐ohmic contact

Yuji Abe, Yasunori Tokuda, Kyozo Kanamoto, and Noriaki Tsukada

Appl. Phys. Lett. 60, 1664 (1992); http://dx.doi.org/10.1063/1.107230 (3 pages) | Cited 3 times

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The dependence of photocurrent properties on incident optical power in a quantum well p‐i‐n photodiode with a nonohmic contact was investigated. The experimental results showed that a significant absorption peak shift, in an extremely low optical power range, as well as a notable modification in the spectral shape at a higher power range was observed, without any external feedback element. The mechanism for the optical nonlinear responses can be explained in terms of the built‐in field screening at the p‐i‐n junction or by taking into account the load characteristics of the Schottky‐like contact.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.20.Jq Electro-optical effects
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.60.Dw Photodiodes; phototransistors; photoresistors

Reactions of hydrogenated defects in fused silica caused by thermal treatment and deep ultraviolet irradiation

D. H. Levy, K. K. Gleason, M. Rothschild, J. H. C. Sedlacek, and R. Takke

Appl. Phys. Lett. 60, 1667 (1992); http://dx.doi.org/10.1063/1.107231 (3 pages) | Cited 5 times

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Nuclear magnetic resonance (NMR) was used to study hydrogen in fused silica for the first time. The 1H NMR spin‐lattice relaxation time constant (T1) in synthetic fused silica was found to be strongly affected by thermal treatments, correlating with the concentration of E′ centers produced during subsequent 193‐nm excimer‐laser irradiation. In addition, the relative proportion of the two components in the NMR spectrum were affected by thermal treatment, although no change in the total hydrogen content was observed. The broad NMR component, because of its linewidth and dependence upon thermal processing, is postulated to be a direct signature of the NMR relaxation centers. These results are interpreted within the framework of a model in which pairs of silanol groups are consumed during thermal treatment, forming a strained bond which is susceptible to E′ center formation.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
76.60.Es Relaxation effects
42.70.-a Optical materials

Planarization in multiple polyimide layers

K. K. Chakravorty and M. H. Tanielian

Appl. Phys. Lett. 60, 1670 (1992); http://dx.doi.org/10.1063/1.107232 (3 pages) | Cited 2 times

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A novel phenomenon, leading to the planarization of topologically prominent features, in partially cured BTDA‐alkylated diamine based preimidized photosensitive polyimide films is reported. This phenomenon appears to be related to solvent interdiffusion between two polyimide layers in intimate contact leading to uniform shrinkage of the two layers. A novel approach for the fabrication of high‐density copper/polyimide multichip interconnect structures has been developed based on the observed planarization phenomenon.
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85.40.Hp Lithography, masks and pattern transfer
85.40.Ls Metallization, contacts, interconnects; device isolation

Destruction of the quantum well structure of thin silicon‐germanium superlattices by ion implantation

W. Freiman, R. Beserman, K. Dettmer, and F. R. Kessler

Appl. Phys. Lett. 60, 1673 (1992); http://dx.doi.org/10.1063/1.107233 (3 pages) | Cited 4 times

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Thin SimGen superlattices (SLs) have been implanted with dopant and neutral ions and annealed at low temperature (600 °C) during a short time (30 min). Intermixing between the two species takes place when the SL has been rendered amorphous. This effect is due to disorder only and no dopant impurity influence could be seen in contrast to the case of III–V SLs.
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68.35.Fx Diffusion; interface formation
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.80.Jh Ion radiation effects

Photoluminescence study of lateral carrier confinement and compositional intermixing in (Al,Ga)Sb lateral superlattices

S. A. Chalmers, H. Weman, J. C. Yi, H. Kroemer, J. L. Merz, and N. Dagli

Appl. Phys. Lett. 60, 1676 (1992); http://dx.doi.org/10.1063/1.107234 (3 pages) | Cited 7 times

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We have compared the photoluminescence properties of an (Al,Ga)Sb lateral superlattice (LSL) quantum well to those of an (Al,Ga)Sb alloy quantum well, with respect to recombination energy and polarization dependence. From the results we have deduced the compositional intermixing and lateral carrier confinement present in the LSL structure. We found that the LSL well luminesces at 36 meV lower than the alloy well, and that emitted light from the LSL well is more than twice as intense when its electric field is polarized parallel versus perpendicular to the LSL ‘‘wires.’’ From these data we calculate that the lateral content of the LSL varies periodically between approximately 24% and 42% AlSb, and the maximum:minimum carrier density ratios are about 4:1 and 6:1 for electrons and heavy holes, respectively.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Dual wavelength optical bistability and multistability in a symmetric self‐electro‐optic effect device based on Wannier–Stark localization

K. Kawashima, K. Fujiwara, T. Yamamoto, and K. Kobayashi

Appl. Phys. Lett. 60, 1679 (1992); http://dx.doi.org/10.1063/1.107235 (3 pages) | Cited 2 times

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A tunable optical switch has been studied of a symmetric self‐electro‐optic effect device based on Wannier–Stark localization (WSL) in GaAs/AlAs superlattices. This device is driven by two different wavelengths for a signal beam and a control beam. Clear bistability and/or triple stability are demonstrated by controlling the illumination wavelengths. The tunability of the switching properties is clearly explained by the WSL mechanism.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

High resolution electron microscopy of crystalline–amorphous interface: An indication to Eden aggregate

Y. Lereah, J. M. Pénisson, and A. Bourret

Appl. Phys. Lett. 60, 1682 (1992); http://dx.doi.org/10.1063/1.107236 (3 pages) | Cited 4 times

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The interface between crystalline and amorphous phases in partially crystallized Al:Ge amorphous thin films was examined by high resolution electron microscopy and by nanoprobe analysis. The interface shows no smoothness at any scale down to the atomic scale. No gradient of concentration was found in the amorphous phase even at irregularities, but pockets of amorphous phase were found in the crystalline scale. These results indicate that no long range atomic mobility exists during crystallization, thus no diffusion in the amorphous phase nor surface diffusion in the crystal interface. The Eden model for growth is well suited to describe the interface morphology.
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68.55.-a Thin film structure and morphology

Nanometer‐scale morphology of homoepitaxial diamond films by atomic force microscopy

L. F. Sutcu, M. S. Thompson, C. J. Chu, R. H. Hauge, J. L. Margrave, and M. P. D’Evelyn

Appl. Phys. Lett. 60, 1685 (1992); http://dx.doi.org/10.1063/1.107237 (3 pages) | Cited 31 times

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We present the first atomic force microscopy images of diamond films grown homoepitaxially in a hot filament reactor on (100), (111), and (110) natural diamond substrates. (100)‐oriented diamond films grown with 0.3% CH4 at a substrate temperature of 810 °C were rough on the micron scale, exhibiting pyramidal features and penetration twins, while films grown with 1.6% CH4 at 1000 °C were nearly atomically smooth and showed evidence of a (2×1) reconstruction. A (111)‐oriented film cracked due to tensile stress and was rough on the 50–500 nm scale, while a (110)‐oriented film was rough on the micron scale but nearly atomically smooth on the 0.5–5 nm scale. Implications of the observed morphologies for diamond growth mechanisms are discussed.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Defects in amorphous silicon probed by subpicosecond photocarrier dynamics

P. A. Stolk, L. Calcagnile, S. Roorda, W. C. Sinke, A. J. M. Berntsen, and W. F. van der Weg

Appl. Phys. Lett. 60, 1688 (1992); http://dx.doi.org/10.1063/1.107212 (3 pages) | Cited 15 times

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The photocarrier dynamics in pure nonhydrogenated amorphous silicon (a‐Si) have been studied with subpicosecond resolution using pump‐probe reflectivity measurements. The photocarrier lifetime increases with the annealing temperature from 1 ps for as‐implanted a‐Si to 11 ps for a‐Si annealed at 500 °C. The lifetime in annealed a‐Si can be returned to the as‐implanted level by ion irradiation. These observations indicate that a‐Si can accommodate a variable number of defect‐related trapping and recombination centers. The saturated defect density in as‐implanted a‐Si is estimated to be ≊1.6 at. %. Comparison with Raman spectroscopy suggests that various kinds of structural defects are present in a‐Si.
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61.72.Bb Theories and models of crystal defects
61.43.Fs Glasses
61.43.-j Disordered solids
61.44.Br Quasicrystals
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.35.+c Brillouin and Rayleigh scattering; other light scattering

25.2% efficiency (1‐sun, air mass 0) AlGaAs/GaAs/InGaAsP three‐junction, two‐terminal solar cell

B.‐C. Chung, G. F. Virshup, M. Klausmeier‐Brown, M. Ladle Ristow, and M. W. Wanlass

Appl. Phys. Lett. 60, 1691 (1992); http://dx.doi.org/10.1063/1.107213 (3 pages) | Cited 7 times

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A 25.2% efficiency measured under 1 sun, air mass 0 illumination has been achieved in a two‐terminal AlGaAs/GaAs/InGaAsP three‐junction solar cell. The cascade cell consists of a monolithic AlGaAs (Eg=1.93 eV)/GaAs two‐junction mechanically stacked on an InGaAsP (Eg=0.95 eV) single‐junction cell. The component cell of the AlGaAs/GaAs two‐junction structure were electrically connected using a metal interconnect fabricated during post‐growth processing. To minimize the obscuration effect introduced by the grid lines and metal interconnect, a prismatic cover glass was bonded to the AlGaAs/GaAs cascade cell. The results obtained with this structure represent the highest 1‐sun, air mass 0 efficiency achieved in any solar cell operating under a two‐terminal configuration. The implications of achieving this high efficiency in a two‐terminal, three‐junction solar cell for terrestrial and space applications are described as well.
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84.60.Jt Photoelectric conversion
73.50.Pz Photoconduction and photovoltaic effects
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Formation of deep complexes in ZnSe during ohmic contact annealing

M. Heuken, J. Söllner, F. E. G. Guimarães, K. Marquardt, and K. Heime

Appl. Phys. Lett. 60, 1694 (1992); http://dx.doi.org/10.1063/1.107214 (3 pages) | Cited 5 times

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The formation of ohmic contacts to n‐ZnSe grown by metalorganic vapor‐phase epitaxy (MOVPE) on GaAs was investigated by current‐voltage and photoluminescence (PL) measurements. Annealing of the contacts even at temperatures as low as 300 °C causes the formation of deep complexes with PL emissions at 2.25–2.35 and 1.97 eV. These centers degrade the electrical and optical properties of the ZnSe epitaxial layers. The effects of strain and Ga outdiffusion on ohmic contact properties was investigated in ZnSe layers of various thicknesses. Due to a gallium‐doped ZnSe transition layer at the substrate heterointerface ohmic contacts are easily formed only on thin layers.
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73.40.Ns Metal-nonmetal contacts
68.35.Dv Composition, segregation; defects and impurities
81.15.Kk Vapor phase epitaxy; growth from vapor phase
71.55.Gs II-VI semiconductors

Small signal and continuous wave operation of the lateral current injection heterostructure field‐effect laser

P. A. Evaldsson, G. W. Taylor, P. Cooke, P. R. Claisse, C. A. Burrus, and B. Tell

Appl. Phys. Lett. 60, 1697 (1992); http://dx.doi.org/10.1063/1.107215 (3 pages) | Cited 3 times

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The lateral current injection heterostructure field‐effect laser structure is operated both as a three‐terminal laser and a field‐effect transistor. The structure was grown by low‐temperature molecular‐beam epitaxy (580 °C) and excellent performance characteristics were obtained for both devices. The laser is shown to have both source/emitter and source/collector modes of operation. Both modes exhibited a continuous wave operation and the source/emitter mode has a −3 dB bandwidth of 4 GHz limited by heating caused by a high source resistance. The transistor had a peak transconductance of 95 mS/mm and a peak drain to source current density of 120 mA/mm for a 2μm×50 μm device.
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42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
85.30.Tv Field effect devices

Correlation between silicon hydride species and the photoluminescence intensity of porous silicon

C. Tsai, K.‐H. Li, D. S. Kinosky, R.‐Z. Qian, T.‐C. Hsu, J. T. Irby, S. K. Banerjee, A. F. Tasch, Joe C. Campbell, B. K. Hance, and J. M. White

Appl. Phys. Lett. 60, 1700 (1992); http://dx.doi.org/10.1063/1.107190 (3 pages) | Cited 182 times

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The role of silicon hydride species in the photoluminescence intensity behavior of porous Si has been studied. The surfaces of luminescent porous Si samples were converted to a predominate SiH termination using a remote H plasma. The as‐passivated samples were then immersed in various concentrations of hydrofluouric solutions to regulate the recovery of SiH2 termination on the surface. Photoluminescence measurements and transmission Fourier‐transform infrared spectroscopy have shown that predominant silicon monohydride (SiH) termination results in weak photoluminescence. In contrast, it has been observed that the appearance of silicon dihydride (SiH2) coincides with an increase in the photoluminescence intensity.
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78.55.Hx Other solid inorganic materials
81.65.-b Surface treatments
81.40.Tv Optical and dielectric properties related to treatment conditions

Single‐crystalline, epitaxial cubic SiC films grown on (100) Si at 750 °C by chemical vapor deposition

I. Golecki, F. Reidinger, and J. Marti

Appl. Phys. Lett. 60, 1703 (1992); http://dx.doi.org/10.1063/1.107191 (3 pages) | Cited 83 times

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Single‐crystalline, epitaxial cubic (100) SiC films have been grown on (100) Si substrates at 750 °C by low‐pressure chemical vapor deposition, using methylsilane, SiCH3H3, a single precursor with a Si:C ratio of 1:1, and H2. This epitaxial growth temperature is the lowest reported to date. The films were characterized by means of transmission electron microscopy, x‐ray diffraction, infrared transmission, four‐point probe and other methods. Based on double‐crystal x‐ray diffractometry, the crystalline quality of our films is equivalent to that of commercial films of similar thickness. The letter describes the novel growth apparatus used and the properties of the films.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Thermal‐stress‐induced voiding in narrow, passivated Cu lines

P. Børgesen, J. K. Lee, R. Gleixner, and C.‐Y. Li

Appl. Phys. Lett. 60, 1706 (1992); http://dx.doi.org/10.1063/1.107192 (3 pages) | Cited 33 times

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Copper is being considered as an alternative to aluminum‐based metallizations in microelectronic circuits, both because copper is a better conductor and because it is expected to be more resistant to thermal stress and electromigration induced failure. However, thermal stresses are found to cause significant voiding in passivated copper lines, in a manner very similar to that commonly observed for passivated aluminum lines.
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61.72.Bb Theories and models of crystal defects
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
85.40.Ls Metallization, contacts, interconnects; device isolation

Accelerated stability test for amorphous silicon solar cells

M. C. Rossi, M. S. Brandt, and M. Stutzmann

Appl. Phys. Lett. 60, 1709 (1992); http://dx.doi.org/10.1063/1.107193 (3 pages) | Cited 8 times

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Fast light‐induced degradation of amorphous silicon p‐i‐n solar cells has been investigated by replacing cw illumination by light pulses of the same average intensity. This method allows us to evaluate the long‐term device performance with exposure times of the order of minutes and avoids complication due to cell temperature increase.
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84.60.Jt Photoelectric conversion
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
73.50.Pz Photoconduction and photovoltaic effects

Differential optical absorption spectroscopy in Ge‐Si superlattices

T. P. Pearsall

Appl. Phys. Lett. 60, 1712 (1992); http://dx.doi.org/10.1063/1.107194 (3 pages) | Cited 7 times

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We have used a differential spectroscopy technique to measure and characterize the optical absorbance spectra of Ge‐Si superlattices. Because of the fundamental nature of the band‐edge electronic structure, it is argued that the conventional models for absorption versus photon energy in bulk semiconductors may not apply to these Ge‐Si superlattices. Results obtained on superlattices grown on Si show localized levels near the band edge, in contrast to those grown on Ge which display a band to band absorption spectrum. The superlattices grown on (001) Ge show more than 100 times the absorbance of those grown on Si, and the absolute magnitude of the absorption corresponds to a band‐edge absorption coefficient greater than 103 cm−1.
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78.66.-w Optical properties of specific thin films
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Doping profiles studied by scanning tunneling spectroscopy

Yi Chiu, M. L. Reed, and T. E. Schlesinger

Appl. Phys. Lett. 60, 1715 (1992); http://dx.doi.org/10.1063/1.107195 (2 pages) | Cited 6 times

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Tunneling spectra have been measured at various locations on uniformly doped, ion‐implanted, and epitaxial silicon samples. We find that the I‐V characteristics consistently vary with the variation of doping concentrations. Significant differences in the I‐V curves are observed between n‐ and p‐type samples. Combined with the high resolution of scanning tunneling microscopes (STM), this principle can be used to obtain two‐dimensional doping profiles in submicron VLSI circuits.
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61.72.uf Ge and Si
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
85.30.De Semiconductor-device characterization, design, and modeling

Growth of InAs and (InAs)1(GaAs)5 superlattice by atomic layer epitaxy using dimethylindium chloride

Kazuo Mori, Shigeo Sugou, Yoshitake Kato, and Akira Usui

Appl. Phys. Lett. 60, 1717 (1992); http://dx.doi.org/10.1063/1.107480 (3 pages) | Cited 5 times

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InAs is grown by metalorganic atomic layer epitaxy (MOALE) using dimethylindium chloride (DMInCl) as a new In source material for ALE in a horizontal, low‐pressure metalorganic chemical vapor deposition (MOCVD) system. Monolayer‐unit growth is obtained over a wide range of growth temperatures from 400 to 475 °C, and of substrate exposure times to DMInCl from 15 to 27 s. With metalorganic chloride source gases, both InAs and GaAs growth are self‐limited over a temperature range of 50 °C, from 425 to 475 °C. This is the widest temperature range so far reported. This advantage is applied to ALE growth of (InAs)1(GaAs)5 superlattice.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Photoluminescence from electron‐hole plasmas confined in Si/Si1−xGex/Si quantum wells

X. Xiao, C. W. Liu, J. C. Sturm, L. C. Lenchyshyn, and M. L. W. Thewalt

Appl. Phys. Lett. 60, 1720 (1992); http://dx.doi.org/10.1063/1.107196 (3 pages) | Cited 40 times

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We report the first observation of photoluminescence from electron‐hole plasmas in Si/Si0.8Ge0.2/Si quantum wells. While at liquid helium temperature, luminescence due to shallow bound excitons is observed. At 77 K electron‐hole plasma (EHP) luminescence dominates the spectra over a wide range of pump powers. Convolution of the occupied electron and hole densities of states gives an excellent fit to the photoluminescence line shape. A band‐gap reduction of up to 15 meV at high carrier densities is observed for wide quantum wells, but no such shift is detected for narrow quantum wells.
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78.55.Hx Other solid inorganic materials
71.35.-y Excitons and related phenomena
78.66.-w Optical properties of specific thin films
71.45.-d Collective effects
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