Single‐crystalline, epitaxial cubic (100) SiC films have been grown on (100) Si substrates at 750 °C by low‐pressure chemical vapor deposition, using methylsilane, SiCH3H3, a single precursor with a Si:C ratio of 1:1, and H2. This epitaxial growth temperature is the lowest reported to date. The films were characterized by means of transmission electron microscopy, x‐ray diffraction, infrared transmission, four‐point probe and other methods. Based on double‐crystal x‐ray diffractometry, the crystalline quality of our films is equivalent to that of commercial films of similar thickness. The letter describes the novel growth apparatus used and the properties of the films.