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13 Apr 1992

Volume 60, Issue 15, pp. 1773-1910

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Spatial modes of a concentric‐circle‐grating surface‐emitting, AlGaAs/GaAs quantum well semiconductor laser

T. Erdogan, O. King, G. W. Wicks, D. G. Hall, C. L. Dennis, and M. J. Rooks

Appl. Phys. Lett. 60, 1773 (1992); http://dx.doi.org/10.1063/1.107211 (3 pages) | Cited 17 times

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We demonstrate the fabrication and operation of an AlGaAs surface‐emitting semiconductor laser, grown by molecular‐beam epitaxy, that incorporates a circularly symmetric grating of period Λ=0.25 μm fabricated using electron‐beam lithography. Azimuthal variations in the grating linewidth have a significant impact on the spatial modes of the laser.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation
42.79.Dj Gratings

Self‐aligned native‐oxide ridge‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure laser arrays

R. S. Burton, T. E. Schlesinger, D. J. Holmgren, S. C. Smith, and R. D. Burnham

Appl. Phys. Lett. 60, 1776 (1992); http://dx.doi.org/10.1063/1.107184 (3 pages) | Cited 7 times

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Process conditions for fabricating ridge geometry AlxGa1−xAs‐GaAs quantum well heterostructure laser arrays utilizing a high quality self‐aligned native oxide of AlxGa1−xAs are presented. Wet oxidation is performed, after etching ridges, via H2O vapor in a N2 or N2/H2(10%) carrier gas at 435–445 °C for 15–20 min. The formation of a uniform smooth oxide was found to be critically dependent on the crystal environment prior to the oxidation process. Characteristics of devices fabricated by this process are presented.
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81.65.-b Surface treatments
42.55.Px Semiconductor lasers; laser diodes

Polarization independent narrow band Bragg reflection gratings made with silica‐on‐silicon waveguides

R. Adar, C. H. Henry, R. C. Kistler, and R. F. Kazarinov

Appl. Phys. Lett. 60, 1779 (1992); http://dx.doi.org/10.1063/1.107185 (3 pages) | Cited 16 times

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We report polarization independent Bragg reflectors, centered at 1.55 μm and made with silica‐on‐silicon waveguides. Gratings are etched into the upper core surface and glass doped with boron and phosphorus is used to fill in the grating corrugation and for the top cladding. The Bragg coupling length in these gratings is independent of polarization. Post‐processing anneals at temperatures above 780 °C weaken the gratings and can be used to tailor the reflection stop band in the range 15–1.5 Å. By etching trenches along the sides of the waveguides, the strain induced birefringence in practically eliminated and the TE and TM reflection peaks overlap to within 0.4 Å.
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42.79.Ci Filters, zone plates, and polarizers

Ultralow threshold multiquantum well InGaAs lasers

T. R. Chen, B. Zhao, Y. H. Zhuang, A. Yariv, J. E. Ungar, and S. Oh

Appl. Phys. Lett. 60, 1782 (1992); http://dx.doi.org/10.1063/1.107186 (3 pages) | Cited 11 times

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Ultralow threshold currents have been obtained in multiquantum well strained‐layer InGaAs lasers. A cw threshold current of 1 mA in an uncoated double quantum well laser and a 0.35 mA (pulsed threshold current 0.25 mA) in a coated laser are demonstrated.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Stimulated emission from p‐Ge due to transitions between light‐hole Landau levels and excited states of shallow impurities

C. Kremser, W. Heiss, K. Unterrainer, E. Gornik, E. E. Haller, and W. L. Hansen

Appl. Phys. Lett. 60, 1785 (1992); http://dx.doi.org/10.1063/1.107164 (3 pages) | Cited 14 times

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We investigate the far infrared emission spectra obtained from the so‐called p‐Ge light‐heavy‐hole laser. The occurrence of a frequency gap between the observed low‐frequency and high‐frequency range is for the first time explained by self‐absorption due to impurity transitions. In the high‐frequency range we find evidence of transitions between light‐hole Landau levels and excited states of shallow impurities to be responsible for the lasing transitions.
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42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
72.20.My Galvanomagnetic and other magnetotransport effects

Measurements of the barrier‐well injection bottleneck in a multiple quantum well optical amplifier

R. Nagar, N. Tessler, D. Abraham, G. Eisenstein, U. Koren, and G. Raybon

Appl. Phys. Lett. 60, 1788 (1992); http://dx.doi.org/10.1063/1.107165 (3 pages) | Cited 9 times

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We describe broadband static pump probe measurements of the barrier‐well injection bottleneck caused by a complicated interaction between three‐ and two‐dimensional carriers in a 1.5‐μm multiple quantum well optical amplifier.
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42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Ultraviolet absorption measurements in single‐mode optical glass fibers

M. D. Gallagher and U. L. Österberg

Appl. Phys. Lett. 60, 1791 (1992); http://dx.doi.org/10.1063/1.107166 (3 pages) | Cited 2 times

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Accurate ultraviolet absorption measurements are reported in telecommunication single‐mode optical fibers in the range from 280 to 600 nm (4.4–2.1 eV) using a cutback method. An absorption peak at 325 nm (3.8 eV) and an absorption edge near 290 nm (4.3 eV) are attributed to features seen in preform spectra. We suggest that fiber and preform absorption spectra are generally the same and do not find that there is any dependence in the absorption on the fiber dimensions. The effects of preparation for second harmonic generation on fiber absorption are also discussed.
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42.81.Cn Fiber testing and measurement of fiber parameters
42.81.Dp Propagation, scattering, and losses; solitons
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Gain compression in tensile‐strained 1.55 μm quantum well lasers operating at first and second quantized states

T. C. Wu, S. C. Kan, D. Vassilovski, K. Y. Lau, C. E. Zah, B. Pathak, and T. P. Lee

Appl. Phys. Lett. 60, 1794 (1992); http://dx.doi.org/10.1063/1.107167 (3 pages) | Cited 10 times

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Gain compression coefficients in tensile‐strained 1.55 μm single quantum well lasers are measured using an optical injection method. Lasers operating in the first and second quantized states are used. An explicit linear dependence of nonlinear gain on the differential gain is obtained from these measurements. These results are quantitatively compared to a recently proposed model involving carrier transport in and out of the quantum well.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Wavelength demultiplexing optical switch

M. S. Ünlü, A. L. Demirel, S. Strite, S. Taşiran, A. Salvador, and H. Morkoç

Appl. Phys. Lett. 60, 1797 (1992); http://dx.doi.org/10.1063/1.107168 (3 pages) | Cited 3 times

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A novel wavelength demultiplexing optical switch (WDMOS) with completely optical input/output capabilities is demonstrated. The WDMOS input elements can be applied to optical logic circuits in which discrete wavelengths are utilized as an added dimension to the intensity levels of the optical signals. The WDMOS can be viewed as a resonant cavity‐enhanced heterojunction phototransistor vertically integrated with a quantum well light emitting diode. The resulting device is an N‐p‐n‐p optical switch situated in an optical cavity which serves to combine the wavelength selective spectral response of the optical cavity with the bistable switching characteristics of the N‐p‐n‐p structure.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.82.-m Integrated optics

Vertical cavity surface emitting laser with a submonolayer thick InAs active layer

S. D. Benjamin, T. Zhang, Y. L. Hwang, M. S. Mytych, and R. M. Kolbas

Appl. Phys. Lett. 60, 1800 (1992); http://dx.doi.org/10.1063/1.107169 (3 pages) | Cited 4 times

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We report photopumped operation of a vertical cavity surface emitting laser where the active region consists of a single pseudomorphic InAs‐GaAs quantum well that is less than one monolayer thick. This represents the thinnest active layer to support stimulated emission when the optical feedback is perpendicular to the layer. Lasing action supported across a submonolayer thick quantum well can be understood by considering the effects on the carrier collection process and the gain across an ultrathin quantum well due to the spreading out of the electron and hole wavefunctions. Pulsed lasing due to gain across the InAs quantum well is confirmed for photoexcitation energies above and below the band edge of the GaAs confining layers at 17 and 77 K.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

New polymeric material containing the tricyanovinylcarbazole group for photorefractive applications

K. Tamura, A. B. Padias, H. K. Hall, and N. Peyghambarian

Appl. Phys. Lett. 60, 1803 (1992); http://dx.doi.org/10.1063/1.107479 (3 pages) | Cited 35 times

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We report on the synthesis and characterization of a new, completely polymeric material with a large electro‐optic coefficient and photoconductivity. A methacrylic ester polymer containing the tricyanovinylcarbazole group with an alkylene spacer was synthesized. With 49 mW laser power, the photoconductivity of the polymer is 9.8×10−10 Ω−1 cm−1 at an applied electric field of 1.4×106 V/cm. Its electro‐optic coefficient is 6.1 pm/V. The quantum efficiency of photocarrier generation and the photorefractive figure of merit were calculated. This electro‐optic polymer is photoconductive and has photocarrier trap sites without any added sensitizer or photocarrier transport reagent, making it a suitable candidate for photorefractive applications.
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42.70.Jk Polymers and organics
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.20.Jq Electro-optical effects
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials

Improvement of viewing angle characteristics in a twisted‐nematic liquid‐crystal display by using a cholesteric liquid‐crystal compensation layer

Hitoshi Hatoh, Masahito Ishikawa, Junko Hirata, Yuzo Hisatake, and Tomiaki Yamamoto

Appl. Phys. Lett. 60, 1806 (1992); http://dx.doi.org/10.1063/1.107170 (3 pages) | Cited 11 times

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Viewing angle characteristics of a twisted nematic (TN) liquid‐crystal display (LCD) have been improved by inserting a planar aligned cholesteric liquid crystal compensating layer between the TN cell and a polarizer. Dependencies of the electro‐optical characteristics of the novel LCD on the retardation, ratio of thickness to the pitch (dc/p) and twist‐sense in the cholesteric layer are discussed. A thin‐film transistor addressed LCD with a wide viewing angle has been developed based on this novel cell construction and its display performance is reported.
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42.79.Kr Display devices, liquid-crystal devices
85.60.Pg Display systems
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order

Diode‐clamped symmetric self‐electro‐optic effect devices with subpicojoule switching energies

A. L. Lentine, L. M. F. Chirovsky, M. W. Focht, J. M. Freund, G. D. Guth, R. E. Leibenguth, G. J. Przybylek, and L. E. Smith

Appl. Phys. Lett. 60, 1809 (1992); http://dx.doi.org/10.1063/1.107171 (3 pages) | Cited 6 times

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We describe symmetric self‐electro‐optic effect devices (S‐SEEDs) with clamping diodes connected to the center node of the devices to ensure both diodes of the S‐SEEDs have an electric field across them at all times. These diode‐clamped S‐SEEDs operate over a greater wavelength range, with greater powers before saturating, and have lower optical switching energies compared to conventional S‐SEEDs. An 8×8 array of diode‐clamped S‐SEEDs has been built and tested. We have demonstrated bistable operation with voltage swings of only 2 V over a wavelength range of 15 nm. Required optical switching energies of 340–580 fJ were measured at input powers from 500 nW to 100 μW for devices with 10×10 μm mesas. This is the lowest reported switching energy for any SEED with acceptable bistable characteristics.
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85.60.-q Optoelectronic devices

Enhanced modulation bandwidth of strained multiple quantum well lasers

P. A. Morton, H. Temkin, D. L. Coblentz, R. A. Logan, and T. Tanbun‐Ek

Appl. Phys. Lett. 60, 1812 (1992); http://dx.doi.org/10.1063/1.107172 (3 pages) | Cited 2 times

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We compare the dynamic properties of bulk, lattice‐matched, and strained multiple quantum well (MQW) 1.3 μm Fabry–Perot lasers up to high‐bias levels. We show for the first time that long wavelength strained MQW lasers can have a higher intrinsic bandwidth than bulk active and lattice‐matched MQW lasers, and that a −3 dB bandwidth of over 30 GHz can be expected from devices with a thin separate confinement heterostructure if a low parasitic device structure is used. The K factor used to determine maximum bandwidth in bulk active laser diodes is shown to be unsuitable for strained MQW devices, where a linear relationship of damping/(resonance frequency)2 is not observed at high power levels.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.30.Fs III-V and II-VI semiconductors

Surface defect inspection of spherical objects by the resonant sphere technique

C. P. Hsieh and B. T. Khuri‐Yakub

Appl. Phys. Lett. 60, 1815 (1992); http://dx.doi.org/10.1063/1.107173 (3 pages) | Cited 4 times

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Ceramic materials, such as silicon nitride and silicon carbide, are important because of their high mechanical strength at high temperature and in nonlubricative environments. The weakness of these materials lies in their brittleness. Stress concentration caused by the existence of surface or subsurface cracks can lead to the total mechanical failure of parts. In this letter, we describe the application of the resonant‐sphere technique to perform nondestructive evaluation of ceramic bearing balls. The technique had been shown to be capable of measuring various material properties, such as Vs (shear wave velocity) and ν (Poisson’s ratio). We use phase and amplitude measurements to simplify the evaluation of various resonance quality factors (Q), and we present, for the first time, the use of a resonance technique to propagate and detect surface waves on a sphere. We also show a decrease in Q for surface‐wave modes due to the existence of surface cracks.
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43.35.Zc Use of ultrasonics in nondestructive testing, industrial processes, and industrial products
81.70.-q Methods of materials testing and analysis
07.07.-a General equipment
62.20.M- Structural failure of materials

Efficient keV x‐ray generation from 50 mJ KrF laser plasmas

J. N. Broughton and R. Fedosejevs

Appl. Phys. Lett. 60, 1818 (1992); http://dx.doi.org/10.1063/1.107174 (3 pages) | Cited 6 times

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High efficiency generation of keV x‐rays from copper and iron targets has been studied using 50 mJ, 90 ps KrF laser pulses. By use of an aberration corrected 125 mm focal length lens conversion efficiencies of 9% and 10% into 800–1400 eV x‐rays have been obtained for copper and iron targets. This is a substantial increase over the 2%–3% previously measured in a similar experiment and is comparable to results obtained with much larger laser energies.  
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Nanostructure fabrication with the scanning tunneling microscope by tunneling medium manipulation

S. L. Tang, A. J. McGhie, and M. E. Lewittes

Appl. Phys. Lett. 60, 1821 (1992); http://dx.doi.org/10.1063/1.107175 (3 pages) | Cited 2 times

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A polymer coating inserted between the tunneling tip and the graphite substrate has been found to improve the writing of nanostructure by short voltage pulses with the scanning tunneling microscope. Structures ranging from 5 to 30 Å with up to 95% success rate were obtained. Unlike previous reports, this structure fabrication process can be carried out even in ultrahigh vacuum. Comparison of pulse heights and structure sizes between coatings of water‐soluble polyvinyl alcohol and a less hygroscopic, water‐insoluble fluorocarbon polymer suggests that the role played by moisture is physical as well as chemical in nature.
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79.20.Kz Other electron-impact emission phenomena
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Diffusion in Ni/Cu bilayer films

P. Bai, B. D. Gittleman, B. ‐X. Sun, J. F. McDonald, T. ‐M. Lu, and M. J. Costa

Appl. Phys. Lett. 60, 1824 (1992); http://dx.doi.org/10.1063/1.107176 (3 pages) | Cited 7 times

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It is shown that the diffusion of Cu into the Ni layer of a Ni/Cu bilayer film after thermal annealing is significantly reduced when the deposition temperature of the Ni layer is raised from approximately 50 to 200 °C. The effect of the deposition temperature on the physical structure of the Ni layer and the possible connection between the Ni layer physical structure and the diffusion reduction are investigated. The effect of the diffusion on the resistivity of the Cu layer is also studied.
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68.35.Fx Diffusion; interface formation
68.55.-a Thin film structure and morphology
75.70.-i Magnetic properties of thin films, surfaces, and interfaces

Steps and spikes in current‐voltage characteristics of oxide/microcrystallite‐silicon/oxide diodes

S. Y. Chou and A. E. Gordon

Appl. Phys. Lett. 60, 1827 (1992); http://dx.doi.org/10.1063/1.107177 (3 pages) | Cited 15 times

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SiO2/microcrystallite‐Si/SiO2 diodes with different contact window sizes were fabricated and studied at room temperature, 77 K, and 4.2 K. Steps were observed in the current‐voltage (I‐V) characteristics at all three temperatures. These steps would appear for a certain number of measurements, depending upon measurement temperature, and then were replaced by a smooth electrical breakdown I‐V characteristic. Data analysis indicates that the steps in the I‐V characteristics are due to local electrical breakdowns along the edge of metal contacts instead of electron resonant tunneling through the structure. Surprisingly, however, in one diode, three repeatable spikes, instead of steps, were observed at 4.2 K; this cannot be satisfactorily explained in terms of electrical breakdown, and seems rather like electron resonant tunneling.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Gk Tunneling
72.80.Ng Disordered solids

Visible (657 nm) InGaP/InAlGaP strained quantum well vertical‐cavity surface‐emitting laser

R. P. Schneider, R. P. Bryan, J. A. Lott, and G. R. Olbright

Appl. Phys. Lett. 60, 1830 (1992); http://dx.doi.org/10.1063/1.107178 (3 pages) | Cited 15 times

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We report the first visible (657 nm) vertical‐cavity surface‐emitting laser. The photopumped undoped structure was grown using low‐pressure metalorganic vapor‐phase epitaxy in a single‐growth sequence on misoriented GaAs substrates. The optical cavity consists of an In0.54Ga0.46P/In0.48(Al0.7Ga0.3)0.52 P strained quantum‐well active region and a lattice‐matched In0.48(AlyGa1−y)0.52 P (0.7≤y≤1.0) graded spacer region, while the distributed Bragg reflectors are composed of Al0.5Ga0.5As/AlAs quarter‐wave stacks. Room‐temperature optically pumped lasing was achieved with a very low‐threshold power, clearly demonstrating the viability of this new technology. These results provide the foundation for visible semiconductor laser‐diode arrays for a number of applications including laser projection displays, holographic memories, and plastic fiber communication.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Localized fabrication of Si nanostructures by focused ion beam implantation

A. J. Steckl, H. C. Mogul, and S. Mogren

Appl. Phys. Lett. 60, 1833 (1992); http://dx.doi.org/10.1063/1.107179 (3 pages) | Cited 26 times

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Si nanostructures have been fabricated by focused ion beam implantation (FIB) followed by etching in KOH/IPA. The FIB implantation into Si at a sufficiently high dose (≥1015/cm2) renders the local Si region much less susceptible to chemical etching. This effect has been observed for FIB implantation with Ga, Au, and Si ions. After etching, the implanted layer forms a cantilever structure whose thickness is a function of the implantation energy. At low energies (<30 keV) nanometer‐scale Si structures can be formed using this technique.
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85.40.Hp Lithography, masks and pattern transfer
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
81.65.-b Surface treatments

Bend‐induced even and odd modes in picosecond electrical transients propagated on a coplanar waveguide

Sotiris Alexandrou, Roman Sobolewski, and Thomas Y. Hsiang

Appl. Phys. Lett. 60, 1836 (1992); http://dx.doi.org/10.1063/1.107180 (3 pages) | Cited 3 times

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A picosecond time separation between the two sides of a single electrical transient propagated on a bent coplanar waveguide has been observed using a subpicosecond electro‐optic sampling system. The separation corresponds to the geometrical path difference introduced by a 90° coplanar waveguide bend. Contrary to the straight waveguide where the transient propagates in the odd mode only, the bend forced the signal to emerge as a superposition of both the odd and even waveguide modes. Introduction of proper local grounding in the bend area, by wirebonding the ground lines on both sides of the transmission line, suppressed the unwanted even mode while preserving the standard odd‐mode propagation.
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84.40.Az Waveguides, transmission lines, striplines
85.40.Ls Metallization, contacts, interconnects; device isolation

Graded InGaP Schottky diodes on Si‐doped InP

N. Pan, J. Carter, G. S. Jackson, D. Lee, S. Hein, M. A. Haase, C. H. Wu, and K. C. Hsieh

Appl. Phys. Lett. 60, 1839 (1992); http://dx.doi.org/10.1063/1.107181 (3 pages) | Cited 3 times

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A compositionally graded InGaP alloy layer grown on a Si‐doped InP layer was used to enhance the Schottky barrier height of InP. The fabricated diodes were characterized by Auger depth profiling, variable temperature I‐V, capacitance‐voltage (C‐V), and internal photoemission. Rectification behavior with a low leakage current was achieved (J=8.3×10−7 A/cm2 at −1V). An enhanced Schottky barrier height of 1.18 eV was measured. The large barrier height permitted a reliable C‐V profile of a moderately doped InP layer (7×1017 cm−3).
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85.30.-z Semiconductor devices
73.30.+y Surface double layers, Schottky barriers, and work functions

Theoretical calculation of optical gain in InxGa1−xAs/InP quantum wells under biaxially compressive and tensile strain

Mitsuru Sugawara

Appl. Phys. Lett. 60, 1842 (1992); http://dx.doi.org/10.1063/1.107182 (3 pages) | Cited 10 times

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We calculated the well‐plane valence band structures and the optical gain in InxGa1−xAs/InP quantum wells under both biaxially compressive and tensile strain using 4×4 Luttinger–Kohn Hamiltonian matrix [ Phys. Rev. 97, 869 (1955)]. We show that tensile strain can improve the 1.5‐μm laser performance as well as compressive strain due to the high joint density of states and the large TM‐mode optical matrix element between the ground‐state conduction and light‐hole subbands.
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42.55.Px Semiconductor lasers; laser diodes
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Multistable floating body potentials: The cause of hysteresis in silicon‐on‐insulator metal‐oxide‐semiconductor transistors

Patrick S. Liu and G. P. Li

Appl. Phys. Lett. 60, 1845 (1992); http://dx.doi.org/10.1063/1.107183 (3 pages) | Cited 1 time

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An experimental study of the hysteresis ID‐VG characteristics in n‐channel silicon‐on‐insulator metal‐oxide‐semiconductor transistors is reported. The result shows that the hysteresis is induced by multistable floating body potentials. An analytical model, which is based on the nonlinear feedback of carrier generation via multiplication and carrier discharge through parasitic bipolar action, also reveals that multistable floating body potentials are responsible for the hysteresis in ID‐VG characteristics. To alleviate hysteresis effect, it is essential to reduce the parasitic bipolar current gain α and multiplication factor M. The reduction of α and M can be achieved by optimal source/drain design.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
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