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13 Apr 1992

Volume 60, Issue 15, pp. 1773-1910

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Raman scattering of InGaAs/InP grown by uniform radial flow epitaxy

Z. C. Feng, A. A. Allerman, P. A. Barnes, and S. Perkowitz

Appl. Phys. Lett. 60, 1848 (1992); http://dx.doi.org/10.1063/1.107187 (3 pages) | Cited 23 times

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Uniform radial flow epitaxy, a novel growth technique, has been used to grow InGaAs films on InP. Epitaxial layers above and below the critical thickness for the onset of slip were grown. We used Raman spectroscopy to characterize the quality of epitaxial layers, determine alloy composition, and measure the strain. Raman spectra from both pseudomorphic (strained) and relaxed (unstrained) InGaAs films were obtained at 300 and 80 K. The difference in the frequencies of their GaAs‐like longitudinal optical phonons was used to calculate stress for the strained InGaAs/InP, leading to a direct formula for the evaluation of the layer stress.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.30.Fs III-V and II-VI semiconductors
81.10.Bk Growth from vapor

Surface reconstruction phase diagram and growth on GaAs(111)B substrates by molecular beam epitaxy

K. Yang and L. J. Schowalter

Appl. Phys. Lett. 60, 1851 (1992); http://dx.doi.org/10.1063/1.107188 (3 pages) | Cited 21 times

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A three‐dimensional phase diagram is introduced to describe the dependence of GaAs(111)B surface reconstruction phases as observed by reflection high‐energy electron diffraction (RHEED) on growth parameters. The 2×2, transitional, and √19 ×√19 surface reconstructions correspond to different zones in the phase diagram. A simple equation is found to be good approximation in representing the boundaries that separate these zones. From RHEED pattern studies, As coverages are evaluated to be a larger than 0.79 for the 2×2 reconstruction and smaller than 0.58 for the√19 ×√19 reconstruction. The dependence of surface morphology and crystal quality on growth condition are discussed in terms of RHEED patterns and growth parameters.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
68.35.Rh Phase transitions and critical phenomena
68.03.Fg Evaporation and condensation of liquids

Surface donor contribution to electron sheet concentrations in not‐intentionally doped InAs‐AlSb quantum wells

Chanh Nguyen, Berinder Brar, Herbert Kroemer, and John H. English

Appl. Phys. Lett. 60, 1854 (1992); http://dx.doi.org/10.1063/1.107189 (3 pages) | Cited 52 times

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The electron concentration in not‐intentionally doped InAs/AlSb quantum wells is found to depend sensitively on the top AlSb barrier thickness even for barriers as thick as 100 nm. The carrier concentration increases as the thickness of this barrier is decreased. The analysis of the dependence of concentration on top barrier thickness indicates that the Fermi level is pinned at the surface of the sample, 850±50 meV below the conduction band edge of the AlSb top layer. Surface donors are the main contribution to the high carrier concentrations in these not‐intentionally doped wells.
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73.20.At Surface states, band structure, electron density of states
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ey III-V semiconductors

Spin dependent recombination in Pt‐doped silicon p‐n junctions

P. Christmann, C. Wetzel, B. K. Meyer, A. Asenov, and A. Endrös

Appl. Phys. Lett. 60, 1857 (1992); http://dx.doi.org/10.1063/1.107160 (3 pages) | Cited 17 times

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Electrically detected magnetic resonance experiments showing spin dependent recombination in commercial p‐n diodes are presented. The observed anisotropy in the g values along with the marked shift from the free electron g‐value point to a metal‐vacancy complex. Deep level transient spectroscopy reveals the presence of the Pt acceptor level (0/−) at Ec−0.23 eV and the donor level (+/0) at Ev+0.32 eV in the same device. Calculations of the recombination rates support that spin dependent recombination occurs at the Pt (+/0) donor level.
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71.55.Ht Other nonmetals
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
76.30.-v Electron paramagnetic resonance and relaxation

Electromigraton activation energy dependence on AlCu interconnect linewidth and microstructure

M. L. Dreyer and C. J. Varker

Appl. Phys. Lett. 60, 1860 (1992); http://dx.doi.org/10.1063/1.107161 (3 pages) | Cited 19 times

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Al 1.5% Cu interconnects with linewidths from 0.8 to 10 μm and median grain size of 3.0 μm were stressed at current densities from 2–3×106 A cm−2 and at film temperatures between 140 and 300 °C. The activation energy dependence of the linewidth and grain size distribution, along with evidence for electromigration damage at specific sites within the film grain structure provides support for a line segment model in which the mass transport mechanism is dependent on the microstructure of the film. The results suggest that the contribution of nongrain boundary diffusion mechanisms to mass transport is more significant than previously believed for lines having comparable grain size and linewidth dimensions. In the context of interconnect reliability in integrated circuits, the data indicates that interconnect design rules which are driven by reliability constraints must include the microstructural properties of the film for accurate assessment.
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85.40.Ls Metallization, contacts, interconnects; device isolation
66.30.Fq Self-diffusion in metals, semimetals, and alloys

Photoluminescence and formation mechanism of chemically etched silicon

S. Shih, K. H. Jung, T. Y. Hsieh, J. Sarathy, J. C. Campbell, and D. L. Kwong

Appl. Phys. Lett. 60, 1863 (1992); http://dx.doi.org/10.1063/1.107162 (3 pages) | Cited 58 times

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Room‐temperature photoluminescence (PL) from Si chemically etched (CE) in HF‐HNO3‐based solution has been observed. Scanning electron microscopy reveals that the etched Si has a surface morphology similar to that of luminescent porous Si fabricated by conventional anodization. PL spectra show an order of magnitude smaller luminescent intensity and a shorter wavelength intensity peak for CE Si. A CE Si thickness limitation was observed. The formation of CE Si can be readily explained by a local anodization model.
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78.55.Hx Other solid inorganic materials
81.65.-b Surface treatments

Deposition of amorphous fluoropolymer thin films by thermolysis of Teflon amorphous fluoropolymer

T. C. Nason, J. A. Moore, and T.‐M. Lu

Appl. Phys. Lett. 60, 1866 (1992); http://dx.doi.org/10.1063/1.107163 (3 pages) | Cited 47 times

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Thin films (0.3–5 μm) of an amorphous fluoropolymer (AF) derived from the copolymeric material Teflon AF 1600 were deposited on Si (100) wafers by vacuum pyrolysis. Infrared spectroscopy indicated that the composition of the deposited films was similar to the source material. The deposited films were amorphous by x‐ray diffraction. The surface morphology contained micropores which did not extend through films deposited at a low rate. The refractive index was ∼1.2 at 633 nm. Comparisons are made to films derived from ordinary Teflon (also by pyrolysis). The mechanism for the repolymerization of the Teflon AF copolymer at the substrate surface is discussed.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials

Optically induced intersubband absorption in biased double quantum wells

V. Berger, N. Vodjdani, B. Vinter, E. Costard, and E. Böckenhoff

Appl. Phys. Lett. 60, 1869 (1992); http://dx.doi.org/10.1063/1.107138 (3 pages) | Cited 3 times

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We present a new all‐optical infrared modulator, which is based on biased double quantum wells. The electric field separates the photogenerated electrons and holes and hence increases their lifetime τ: the photoinduced infrared absorption is therefore enhanced. An increase of the modulation efficiency by two or three orders of magnitude is predicted and an enhancement of at least 20 has been observed at 4 K. At high pump power (150 mW), the linear dependence of the absorption as a function of applied bias is observed and discussed. We have also observed photoinduced intersubband transitions in the valence band in both infrared polarizations.
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78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.79.Hp Optical processors, correlators, and modulators
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

In situ control of As composition in InAsP and InGaAsP grown by gas‐source molecular beam epitaxy

H. Q. Hou and C. W. Tu

Appl. Phys. Lett. 60, 1872 (1992); http://dx.doi.org/10.1063/1.107139 (3 pages) | Cited 18 times

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Group‐III‐ and group‐V‐induced intensity oscillations of reflection high‐energy electron diffraction are observed for InAsP in gas‐source molecular beam epitaxial growth. The As incorporation rate is found to be dominant, independent of the presence of P when the phosphine flow rate is reasonably low. This observation suggests a simple method of controlling the As composition in InAsP by just controlling the incorporation‐rate ratio of As to In when this ratio is less than unity. This successful in situ composition control for InAsP, combined with the in situ composition calibration in GaAsP reported previously, provides a general guideline for controlling the compositions in InGaAsP.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Nq Composition and phase identification

Chalcopyrite CuGaxIn1−xSe2 semiconducting thin films produced by radio frequency sputtering

J. L. Hernández‐Rojas, M. L. Lucía, I. Mártil, J. Santamaría, G. González‐Díaz, and F. Sánchez‐Quesada

Appl. Phys. Lett. 60, 1875 (1992); http://dx.doi.org/10.1063/1.107140 (3 pages) | Cited 5 times

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CuGaxIn1−xSe2 thin films have been deposited by rf sputtering from three targets with different (Ga,In) content (x=0.25, x=0.5, and x=0.75). A structural, compositional, optical, and electrical study has been carried out for films grown at substrates temperatures higher than 350 °C. We have successfully obtained chalcopyrite single phase stoichiometric films. Very sharp absorption edges are obtained, with band gaps of 1.12, 1.35, and 1.51 eV for x=0, x=0.5, and x=0.75, respectively.
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81.15.Cd Deposition by sputtering
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.50.Pz Photoconduction and photovoltaic effects

Thermal effects on (100) CdZnTe substrates as studied by x‐ray photoelectron spectroscopy and reflection high energy electron diffraction

Y. S. Wu, C. R. Becker, A. Waag, R. N. Bicknell‐Tassius, and G. Landwehr

Appl. Phys. Lett. 60, 1878 (1992); http://dx.doi.org/10.1063/1.107141 (3 pages) | Cited 12 times

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The influence of different CdZnTe substrate treatments prior to II‐VI molecular beam epitaxial growth on surface stoichiometry, oxygen, and carbon contamination has been studied using x‐ray photoelectron spectroscopy and reflection high energy electron diffraction. Heating the substrate at 300 °C can eliminate oxygen contamination, but cannot completely remove carbon from the surface. Heating at higher temperatures decreases the carbon contamination only slightly, while increasing the Zn–Cd ratio on the surface considerably. The magnitude of the latter effect is surprising and is crucial when one is using lattice matched CdZnTe (Zn 4%) substrates.
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81.65.-b Surface treatments
81.40.Gh Other heat and thermomechanical treatments
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Perpendicular electron transport through a two‐dimensional electron‐ gas layer

R.‐J. E. Jansen, Behnam Farid, and M. J. Kelly

Appl. Phys. Lett. 60, 1881 (1992); http://dx.doi.org/10.1063/1.107142 (3 pages) | Cited 2 times

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See Also: Erratum

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We analyze the scattering processes of high‐energy (approximately 0.3 eV) electrons impinging at normal incidence on a zero‐temperature two‐dimensional electron gas (2DEG), and derive an expression for the scattering probability. We proceed in calculating the total scattering rate and energy loss of the hot electrons as a function of their energy of incidence. These results are then compared with those of the recent experiments performed on a hot‐electron transistor with a 2DEG base. Our calculated base transfer ratio is in good agreement with the measured value.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Tv Field effect devices
72.10.-d Theory of electronic transport; scattering mechanisms
85.30.De Semiconductor-device characterization, design, and modeling

Effect of oxygen on boron doping in chemical vapor deposition of diamond as deduced from cathodoluminescence studies

J. Ruan, K. Kobashi, and W. J. Choyke

Appl. Phys. Lett. 60, 1884 (1992); http://dx.doi.org/10.1063/1.107143 (3 pages) | Cited 17 times

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Diamond films were grown using microwave‐plasma enhanced chemical vapor deposition. Boron doping in these films were achieved by using 0–1 ppm diborane (B2H6) in the reaction gas mixture during the deposition process. Some samples were deposited using 0.1% oxygen in the reaction gas mixture. We have employed cathodoluminescence to analyze the deposited diamond films and found that the boron concentration in diamond films is significantly reduced when oxygen was used in the deposition. For example, our result indicates that the boron concentration in films doped with 1.0 ppm B2H6 with the addition of 0.1% oxygen is close to that of films doped with 0.01 ppm B2H6 without using oxygen. Therefore, the probability of boron incorporation in diamond films is reduced by a factor of roughly 100 when 0.1% oxygen is used compared with the case where no oxygen is used.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Detection of weak link effects in superconducting YBa2Cu3O7−y epitaxial thin films by magnetically modulated resistance

B. F. Kim, K. Moorjani, F. J. Adrian, and J. Bohandy

Appl. Phys. Lett. 60, 1887 (1992); http://dx.doi.org/10.1063/1.107478 (3 pages) | Cited 5 times

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Evidence of weak link effects in epitaxial thin films of YBa2Cu3O7−y with well‐aligned grains is obtained from magnetically modulated resistance measurements. These results are of interest because weak links could provide a mechanism for the residual microwave loss in these types of superconductor thin films which contain predominantly low angle grain boundaries.
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74.78.-w Superconducting films and low-dimensional structures
74.25.N- Response to electromagnetic fields
74.50.+r Tunneling phenomena; Josephson effects
74.70.-b Superconducting materials other than cuprates

Investigation of excimer laser ablation of ceramic and thin film Y‐Ba‐Cu‐O using nanosecond photoacoustic techniques

P. E. Dyer, S. Farrar, and P. H. Key

Appl. Phys. Lett. 60, 1890 (1992); http://dx.doi.org/10.1063/1.107144 (3 pages) | Cited 11 times

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Nanosecond photoacoustic measurements of excimer laser ablated ceramic and thin film Y‐Ba‐Cu‐O superconductors are reported that provide information on the ablation timescale threshold and surface pressure. Results for the surface pressure are found to be inconsistent with a simple surface vaporization model, suggesting that a different removal mechanism is operative. The outline of an alternative mechanism based on the concept of explosive removal is put forward.
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79.20.Ds Laser-beam impact phenomena
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments

Practical adaptation in bulk superconducting magnetic bearing applications

C. K. McMichael, K. B. Ma, M. A. Lamb, M. W. Lin, L. Chow, R. L. Meng, P. H. Hor, and W. K. Chu

Appl. Phys. Lett. 60, 1893 (1992); http://dx.doi.org/10.1063/1.107145 (3 pages) | Cited 15 times

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Lifting capacities greater than 41 N/cm2 (60 psi) at 77 K have been achieved using a combination of permanent magnets and high quality melt‐textured YBa2Cu3O7−δ (YBCO). The key concept of this hybrid superconducting magnetic bearing (HSMB) is the use of strong magnetic repulsion and attraction from permanent magnets to support high loads in conjunction with flux pinning in a type II superconductor to counteract instabilities in a system consisting of magnets only. To illustrate this concept, radial and axial forces between magnet/superconductor, magnet/magnet, and magnet/superconductor/magnet, were measured and compared for the thrust and journal bearing configurations on a bearing prototype.
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84.71.Ba Superconducting magnets; magnetic levitation devices

Scanning tunneling microscopic studies of growth spirals in bulk single crystals of superconducting YBa2Cu3O7 and flux pinning

A. V. Narlikar, P. K. Dutta, S. B. Samanta, O. N. Srivastava, P. Ramasamy, S. C. Sabarwal, M. K. Gupta, and B. D. Padalia

Appl. Phys. Lett. 60, 1896 (1992); http://dx.doi.org/10.1063/1.107146 (3 pages) | Cited 3 times

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Growth spirals have been observed in the basal plane of bulk single crystals of Y‐123 high Tc cuprate, using scanning tunneling microscope with the unit cell resolution. The density of screw dislocations present is of the order of 107–108/cm2, close to the recently reported values for the sputtered epitaxial thin films of Y‐123. The growth steps or terraces which are generally shown to possess a step height equal to the c parameter of the unit cell, have been further resolved into substeps corresponding to each of the triple perovskite block. Further, in the limit of ultimate resolution we have been able to demonstrate the substep heights corresponding to the individual atomic layers of the unit cell and thus provide a persuasive evidence that single crystals of Y‐123 grow via layer‐by‐layer growth on the atomic scale within the purview of the spiral growth mechanism. Growth features are briefly discussed and it is argued that the observed screw dislocation density is still too low and the orientation is not favorable for realizing optimum flux pinning in these HTSC systems.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)

Flicker (1/f) noise in biepitaxial grain boundary junctions of YBa2Cu3O7−x

A. H. Miklich, John Clarke, M. S. Colclough, and K. Char

Appl. Phys. Lett. 60, 1899 (1992); http://dx.doi.org/10.1063/1.107147 (3 pages) | Cited 46 times

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At low frequencies f the 1/f noise power in single biepitaxial junctions of YBa2Cu3 O7−x peaks sharply for bias currents just above the noise reduced critical current and increases as I2 for high bias currents I. This behavior is explained by a model in which both critical current fluctuations δI0 and resistance fluctuations δR contribute to the measured voltage noise. The magnitude of the normalized critical‐current fluctuations ‖δI0/I0‖ is always much greater than that of the normalized resistance fluctuations ‖δR/R‖. Switching the bias current between positive and negative values at 2 kHz greatly reduces the magnitude of the 1/f noise from both sources, implying that the coherence of the noise generating process is not affected by the current reversal.
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74.40.-n Fluctuation phenomena
85.25.Cp Josephson devices
74.70.-b Superconducting materials other than cuprates

Dominant pinning mechanisms in YBa2Cu3O7−x films on single and polycrystalline yttria stabilized zirconia substrates

K. S. Harshavardhan, M. Rajeswari, D. M. Hwang, C. Y. Chen, T. Sands, T. Venkatesan, J. E. Tkaczyk, K. W. Lay, and A. Safari

Appl. Phys. Lett. 60, 1902 (1992); http://dx.doi.org/10.1063/1.107148 (3 pages) | Cited 5 times

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Critical‐current densities have been measured in YBa2Cu3O7−x films deposited on (100) yttria stabilized zirconia (YSZ) and polycrystalline YSZ substrates as a function of temperature (4.5–88 K), magnetic field (0–1 T) and orientation relative to the applied field. The results indicate that in films on polycrystalline substrates, surface and interface pinning play a dominant role at high temperatures. In films on (100) YSZ, pinning is mainly due to intrinsic layer pinning as well as extrinsic pinning associated with the interaction of the fluxoids with point defects and low energy planar (2D) boundaries. The differences are attributed to the intrinsic rigidity of single fluxoids which is reduced in films on polycrystalline substrates thereby weakening the intrinsic layer pinning.
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74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures

Single domain high Tc La2−xSrxCuO4 films with tilted CuO2 planes

J. Kwo, R. M. Fleming, H. L. Kao, D. J. Werder, and C. H. Chen

Appl. Phys. Lett. 60, 1905 (1992); http://dx.doi.org/10.1063/1.107149 (3 pages) | Cited 20 times

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The two fold degeneracy inherent to epitaxial growth of high Tc films on (101) perovskite substrates has been removed successfully. This is demonstrated by single domain, (103) oriented La2−xSrxCuO4 films of 0.04≤x≤0.34 on vicinal (101) SrTiO3 substrates using 90° off‐axis sputtering. (101) substrates that have the surface normal rotated about [010] by 0.5°–3.5° produced essentially single crystal films with the c‐axis direction determined by the sense of the miscut. Misoriented antidomains (103)′ have been eliminated effectively to a percentage less than 1 part in 104. The mechanism for symmetry breaking is understood on the basis of a surface step model in which the energetics promoting single domain growth is derived from nucleation and epitaxy on the (001) face found at surface steps of vicinal substrates. Furthermore, the incommensuration of the c axis interplanar spacings with the a, b, plane lattice parameters in the La2−xSrxCuO4 structure provides a natural selection of (103) domains over (103)′ domains. The model predicts the application to other high Tc materials such as the Bi2Sr2CanCun+1Ox, and the Tl2Ba2CanCun+1Ox families.
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74.78.-w Superconducting films and low-dimensional structures
68.55.-a Thin film structure and morphology
74.70.-b Superconducting materials other than cuprates

Growing thin magnetic films with a mask: Distinguishing between magnetic and instrumental asymmetries

R. Allenspach, A. Bischof, M. Stampanoni, D. Kerkmann, and D. Pescia

Appl. Phys. Lett. 60, 1908 (1992); http://dx.doi.org/10.1063/1.107150 (3 pages) | Cited 5 times

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A simple technique is presented which allows a very small spin polarization to be distinguished from a vanishing one in spin polarized scanning electron microscopy (spin‐SEM). Ferromagnetic thin films are evaporated through a mask onto a nonmagnetic substrate, thus producing a patterned area. Spin polarization and the element specificity of the secondary electron yield are combined to determine a local ‘‘asymmetry zero’’ where the spin polarization vanishes. With this technique it is possible to distinguish between a single domain thin film and a nonmagnetic one in spin‐SEM. This is exemplified by monolayer Co/Cu (100) films.
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75.70.Ak Magnetic properties of monolayers and thin films
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
79.20.Hx Electron impact: secondary emission
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