Low threshold, 633 nm diode lasers are demonstrated. These devices contain a single, 80 Å, tensile‐strained Ga0.6In0.4P quantum well (QW) active region, and Al0.5In0.5P cladding layers, grown by low‐pressure organometallic vapor phase epitaxy on misoriented substrates. Operating characteristics are compared with low‐threshold, 680 nm compressively strained Ga0.4In0.6P QW lasers. Although performance is not as good as for the 680 nm devices, the 633 nm lasers have characteristic temperature T0∼60 K and low pulsed threshold current density (400 A/cm2). These improved characteristics are believed due to the incorporation of a single, tensile‐strained QW, along with (Al0.6Ga0.4)0.5In0.5P confining layers, which offer increased electron confinement.