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20 Apr 1992

Volume 60, Issue 16, pp. 1921-2032

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Chemical and electrical characterization of AlGaAs/GaAs heterojunction bipolar transistors treated by electron cyclotron resonance plasmas

P. W. Li, Q. Wang, and E. S. Yang

Appl. Phys. Lett. 60, 1996 (1992); http://dx.doi.org/10.1063/1.107122 (3 pages) | Cited 4 times

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The effects of electron cyclotron resonance (ECR) hydrogen, nitrogen, and ammonia plasma have been studied by x‐ray photoelectron spectroscopy. Experimental evidence shows that the ECR hydrogen plasma removes the native oxide on the GaAs surface and recovers the surface order. A mixed nitride‐oxide surface layer is formed after nitrogen and ammonia plasma treatments. The appearance of the nitride layer correlates with the passivation of the GaAs surface and the much improved I‐V characteristics of AlGaAs/GaAs heterojunction bipolar transistors.
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85.30.Pq Bipolar transistors
81.65.-b Surface treatments
73.20.At Surface states, band structure, electron density of states

Room temperature blue light emitting p‐n diodes from Zn(S,Se)‐based multiple quantum well structures

W. Xie, D. C. Grillo, R. L. Gunshor, M. Kobayashi, H. Jeon, J. Ding, A. V. Nurmikko, G. C. Hua, and N. Otsuka

Appl. Phys. Lett. 60, 1999 (1992); http://dx.doi.org/10.1063/1.107123 (3 pages) | Cited 44 times

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Blue (494 nm) light emitting quantum well diodes based on Zn(S,Se) p‐n junctions are demonstrated at room temperature. P‐type Zn(S,Se) is realized by using a nitrogen rf plasma cell. The light emitting diode is formed on homoepitaxial GaAs buffer layers by molecular beam epitaxy. The S fraction of the alloy is selected to provide a lattice match between the II‐VI active region and the GaAs buffer; the result is an active region having a dislocation density below 105/cm−2. The letter discusses emission characteristics as well as the x‐ray rocking curve and transmission electron microscopy characterization of the structures.
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85.60.Jb Light-emitting devices
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Adsorption and decomposition of diethylgermane on Si(111) 7×7

P. A. Coon, M. L. Wise, Z. H. Walker, S. M. George, and D. A. Roberts

Appl. Phys. Lett. 60, 2002 (1992); http://dx.doi.org/10.1063/1.107124 (3 pages) | Cited 2 times

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Germanium was deposited on Si(111) 7×7 by the adsorption and thermal decomposition of diethylgermane [(CH3CH2)2GeH2] (DEG). The DEG reaction products were CH2☒CH2 and H2, which desorbed at 700 and 800 K, respectively, as observed by laser‐induced thermal desorption and temperature programmed desorption techniques. The desorption of atomic Ge was also monitored at approximately 1200 K. The production of ethylene was consistent with a β‐hydride elimination mechanism for the surface ethyl groups, i.e., Ge—CH2CH3→GeH+CH2☒CH2. The initial sticking coefficient of DEG decreased with increasing surface temperature and a saturation coverage was obtained after exposures of E≳700 L at 200 K. This saturation behavior indicates that DEG may be useful for the controlled growth of Ge atomic layers on silicon surfaces.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.43.-h Chemisorption/physisorption: adsorbates on surfaces

Investigation of the electronic properties of in situ annealed low‐temperature gallium arsenide grown by molecular beam epitaxy

L.‐W. Yin, J. P. Ibbetson, M. M. Hashemi, A. C. Gossard, U. K. Mishra, Y. Hwang, T. Zhang, and R. M. Kolbas

Appl. Phys. Lett. 60, 2005 (1992); http://dx.doi.org/10.1063/1.107125 (3 pages) | Cited 4 times

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Current conduction through in situ annealed low‐temperature gallium arsenide (LT GaAs) grown by molecular beam epitaxy (MBE) has been studied using Schottky diodes. The dominant transport mechanism in these films was found to be space‐charge‐limited current conduction in the presence of deep level states. We also examined two LT GaAs films, one with initially 4000 Å thick subsequently etched back to 2000 Å and the other sample with an initial thickness of 2400 Å, and found that the excess arsenic redistribution or clustering, carrier trap levels, and concentration depend strongly on the initial thickness of the LT GaAs film.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.50.-h Electronic transport phenomena in thin films

Trapped‐hole annealing and electron trapping in metal‐oxide‐semiconductor devices

D. M. Fleetwood, R. A. Reber, and P. S. Winokur

Appl. Phys. Lett. 60, 2008 (1992); http://dx.doi.org/10.1063/1.107126 (3 pages) | Cited 9 times

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Thermally stimulated current‐ and capacitance‐voltage techniques are combined to provide the first quantitative estimates of the contributions of trapped‐hole annealing and electron trapping to oxide‐trap charge neutralization in metal‐oxide‐semiconductor devices. For 350‐nm nonradiation‐hardened oxides, trapped electrons compensate ∼15% of the radiation‐induced trapped positive charge after x‐ray irradiation (evidently forming dipolar defects), and ∼65% of the trapped positive charge remaining after positive‐bias annealing at 80 °C. For 45‐nm radiation‐hardened oxides, trapped electrons compensate ∼45% of the trapped positive charge after irradiation, and ∼70% after annealing. Implications for models of oxide‐trap‐charge buildup and annealing are discussed.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
61.80.Cb X-ray effects

Double wavelength selective GaAs/AlGaAs infrared detector device

A. Köck, E. Gornik, G. Abstreiter, G. Böhm, M. Walther, and G. Weimann

Appl. Phys. Lett. 60, 2011 (1992); http://dx.doi.org/10.1063/1.107127 (3 pages) | Cited 37 times

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We demonstrate the first GaAs/AlGaAs multiquantum well infrared detector device with double wavelength selectivity and high wavelength resolution. By applying an efficient light coupling mechanism, which is based upon the excitation and emission of surface plasmons, we have achieved a responsivity R of 2.20 A/W and a detectivity D∗ of 2.2×1011 cm √Hz/W for λ=7.38 μm at a temperature T=5 K for a 300 K background irradiance and a 90° field of view, which are one of the highest values reported to date.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.40.+w Photoconduction and photovoltaic effects

Tl2Ba2CaCu2O8 films with very low microwave surface resistance up to 95 K

W. L. Holstein, L. A. Parisi, C. Wilker, and R. B. Flippen

Appl. Phys. Lett. 60, 2014 (1992); http://dx.doi.org/10.1063/1.107128 (3 pages) | Cited 59 times

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Very low surface resistance Tl2Ba2CaCu2O8 films of thickness 1.0 μm on (100) LaAlO3 were fabricated and characterized. The films are highly c‐axis oriented (x‐ray diffraction rocking curve full width half maximum of 0.68°) with good in‐plane epitaxy with respect to the substrate. The Tc of the films was 107.6±0.5 K as measured by ac magnetic susceptibility. The surface resistance at 10 GHz was measured with the parallel plate resonator technique and found to be 23±5 μΩ at 4.2 K, 130±20 μΩ at 77 K, and 300±60 μΩ at 95 K. Using a 20 GHz TE011 end‐wall replacement copper cavity, the surface resistance was found to be comparable to that of copper, about 18 mΩ, at 104±1 K. The surface resistance of the films is significantly lower than that of all films reported to date at temperatures above 70 K and only slightly higher than the best high‐temperature superconductor films reported to date at 4.2 K.
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81.15.Cd Deposition by sputtering
74.25.N- Response to electromagnetic fields
74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates

Experiments on the interaction between long Josephson junctions and a coplanar strip resonator

A. Davidson and N. F. Pedersen

Appl. Phys. Lett. 60, 2017 (1992); http://dx.doi.org/10.1063/1.107129 (3 pages) | Cited 2 times

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Experiments are reported on a new geometry designed to couple long Josephson junction fluxon oscillators to a resonant cavity. The junctions were made with a niobium‐aluminum oxide‐niobium trilayer process with a critical‐current density of around 1000 A/cm2. Various numbers of such junctions were incorporated directly as part of a coplanar strip half‐wave resonator, with fundamental mode of about 34 GHz. Both the current density and oscillation frequency are higher than in previous experiments. Evidence for phase locking of multiple junctions is presented.
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84.40.Dc Microwave circuits
85.25.Dq Superconducting quantum interference devices (SQUIDs)
74.50.+r Tunneling phenomena; Josephson effects

Superconducting and optical properties of ultrathin films of Bi2(Sr,Ca)3Cu2Ox formed at 673 K

Akihisa Yanase, Masami Mori, Ziyuan Liu, and Maki Kawai

Appl. Phys. Lett. 60, 2020 (1992); http://dx.doi.org/10.1063/1.107130 (3 pages) | Cited 2 times

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Electronic properties of ultrathin films of Bi2(Sr,Ca)3Cu2Ox, successively formed on MgO(100) at a substrate temperature of 673 K using atomic layering deposition of metals followed by oxidation with a 8×10−7 Torr NO2 are studied. It was revealed that the film formed at 673 K showed a semiconductive property, whereas the film annealed at 1093 K with 760 Torr O2 shows a superconducting transition with the onset Tc of 90 K and the zero‐resistance Tc of 40 K. Optical absorption and x‐ray diffraction studies indicate that the electronic structure of Bi2(Sr,Ca)3Cu2Ox ultrathin film changes from charge‐transfer type semiconductor to a superconductor with an in‐gap band, due to the increase in carrier concentration caused by annealing with O2.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
74.70.-b Superconducting materials other than cuprates
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
74.78.-w Superconducting films and low-dimensional structures

In situ fabrication of superconducting Lu‐Ba‐Sr‐Cu‐O films by pulsed‐laser deposition

P. Schwab, X. Z. Wang, and D. Bauerle

Appl. Phys. Lett. 60, 2023 (1992); http://dx.doi.org/10.1063/1.107131 (3 pages) | Cited 6 times

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Thin superconducting films of single phase LuBa2Cu3O7 and LuBaSrCu3O7 have been synthesized by means of laser sputtering. The films show zero resistance at 90 and 54 K, respectively. The critical current density found with LuBa2Cu3O7 films at 83 K is in excess of 106 A/cm2. The synthesis of these materials by standard solid‐state reactions has not yet been achieved successfully.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
74.70.-b Superconducting materials other than cuprates

55 GHz microstrip bandpass filter made from YBa2Cu3O7−x superconductor thin film

I. S. Gergis, J. T. Cheung, T. N. Trinh, E. A. Sovero, and P. H. Kobrin

Appl. Phys. Lett. 60, 2026 (1992); http://dx.doi.org/10.1063/1.107132 (3 pages) | Cited 15 times

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We report the first mm wave passive component made with high temperature superconducting thin films. Microstrip bandpass filters, with bandwidth of 2.2 GHz and a center frequency of 55 GHz, were made using YBa2Cu3O7−x filter patterns on MgO substrates with Au ground planes. The best results were obtained for a film grown with a thin SrTiO3 buffer layer and had Tc=89 K and Jc=106 A/cm2 at 84 K. The filter showed insertion loss of 1.7 db at 77 K, and 1.5 db at 70 K, compared to 7.3 db for Au filters at 77 K. Subtracting the losses in the Au ground plane, we estimated that the superconductor surface resistance is lower than one fourth that of Au at 77 K and 55 GHz.
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84.40.Dc Microwave circuits
84.30.Vn Filters
85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices
74.70.-b Superconducting materials other than cuprates

Mechanically alloyed and gas‐phase carbonated highly coercive Sm2Fe17Cx

C. Kuhrt, M. Katter, J. Wecker, K. Schnitzke, and L. Schultz

Appl. Phys. Lett. 60, 2029 (1992); http://dx.doi.org/10.1063/1.107108 (3 pages) | Cited 18 times

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Microcrystalline Sm2Fe17Cx powders with high carbon content (x≊2) were prepared by mechanical alloying and a subsequent solid‐gas reaction in acetylene atmosphere to introduce carbon atoms interstitially into the 2:17 lattice. Such processing results in magnetically isotropic material with a room‐temperature coercivity of up to 18.5 kA/cm (23.2 kOe) and a maximum energy product of 59 kJ/m3 (7.4 MGOe). It is unstable at high temperatures and decomposes into the equilibrium phases SmC and α‐Fe upon heating to 700 °C in vacuum.
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81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
81.40.Rs Electrical and magnetic properties related to treatment conditions
75.50.Vv High coercivity materials
FREE

Erratum: Phase‐matching retracing behavior: New features in LiB3O5 [Appl. Phys. Lett. 59, 1541 (1991)]

Shujie Lin, Baichang Wu, Fali Xie, and Chuangtian Chen

Appl. Phys. Lett. 60, 2032 (1992); http://dx.doi.org/10.1063/1.107446 (1 page) | Cited 2 times

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Abstract Unavailable
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
99.10.Cd Errata
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