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11 May 1992

Volume 60, Issue 19, pp. 2321-2439

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Demonstration of broadband tunability in a semiconductor laser using sampled gratings

V. Jayaraman, D. A. Cohen, and L. A. Coldren

Appl. Phys. Lett. 60, 2321 (1992); http://dx.doi.org/10.1063/1.107013 (3 pages) | Cited 18 times

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We propose and demonstrate a new monolithic laser structure in which the fractional tuning range Δλ/λ can be more than an order of magnitude larger than the fractional index change Δμ/μ in one section. The key idea involves using grating mirrors with grating elements removed in a periodic fashion. These ‘‘sampled gratings’’ have reflection spectra with periodic maxima. By using two such mirrors with identical grating pitch but mismatched sampling periods, it is possible to tune among the various reflectivity maxima. Our initial experimental results show 29.3 nm of tuning in an InGaAsP laser.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Enhancement of change in the absorption coefficient in an asymmetric quantum well

Nobuhiko Susa and Tatsushi Nakahara

Appl. Phys. Lett. 60, 2324 (1992); http://dx.doi.org/10.1063/1.107014 (3 pages) | Cited 11 times

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We propose a three‐step asymmetric quantum well to enhance change in the absorption coefficient by applying electric field. Oscillator strength for the n=1 heavy hole exciton is reduced at zero bias and increased at bias voltage. This three‐step structure has the advantages of a large change in absorption, low transmission loss, and low operating voltage in absorption‐type optical modulators utilizing the quantum confined Stark effect.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
71.35.-y Excitons and related phenomena

Pump wavelength tuning of optical parametric oscillations and frequency mixing in KTiOAsO4

Mahendra G. Jani, James T. Murray, Roger R. Petrin, Richard C. Powell, D. N. Loiacono, and G. M. Loiacono

Appl. Phys. Lett. 60, 2327 (1992); http://dx.doi.org/10.1063/1.107015 (3 pages) | Cited 5 times

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The properties of alexandrite laser‐pumped optical parametric oscillators are reported for potassium titanyl arsenate. Near infrared tuning curves and slope efficiencies were measured as functions of pump wavelength and pump power. In addition, sum frequency mixing of red and infrared wavelengths to produce green emission is also reported.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Scanning electron microscopy observation of excitation of the surface acoustic waves by the regular domain structures in the LiNbO3 crystals

D. V. Roshchupkin, Th. Fournier, M. Brunel, O. A. Plotitsyna, and N. G. Sorokin

Appl. Phys. Lett. 60, 2330 (1992); http://dx.doi.org/10.1063/1.107016 (2 pages) | Cited 12 times

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This letter reports a scanning electron microscope study of excitation of surface acoustic waves by the regular domain structures in LiNbO3 crystals. The regular domain structures in LiNbO3 crystals were formed by the method of aftergrowth thermoelectrical treatment. It is shown that the regular domain structures excite surface acoustic waves by the piezoelectric effect. In this case, the wavelength of the surface acoustic waves is determined by the period of the regular domain structure. These experiments have been made at CNRS (Grenoble, France) using a scanning electron microscope JSM‐840.
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68.35.Gy Mechanical properties; surface strains
43.35.Pt Surface waves in solids and liquids
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
77.65.-j Piezoelectricity and electromechanical effects

Study of a plasma‐filled X‐band backward wave oscillator

X. Zhai, E. Garate, R. Prohaska, and Gregory Benford

Appl. Phys. Lett. 60, 2332 (1992); http://dx.doi.org/10.1063/1.107017 (3 pages) | Cited 16 times

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We present experimental studies of a plasma‐filled X‐band backward wave oscillator (BWO). Depending on the background gas pressure, microwave frequency upshifts of up to 1 GHz appeared along with an enhancement of a factor of 7 in the total microwave power emission. The bandwidth of the microwave emission increased from ≤0.5 to 2 GHz when the BWO was working at the rf power enhancement pressure region. The rf power enhancement appeared over a much wider pressure range in a high beam current case (10–100 mT for 3 kA) as compared to a lower beam case (80–115 mT for 1.6 kA). The plasma‐filled BWO has higher power output compared to the vacuum BWO over a broader region of magnetic guide field strength.
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52.59.Px Hard X-ray sources
52.40.Fd Plasma interactions with antennas; plasma-filled waveguides
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.40.Mj Particle beam interactions in plasmas

Magnetic multipole‐based reactive ion etching reactor

B. Singh, J. H. Thomas III, and V. Patel

Appl. Phys. Lett. 60, 2335 (1992); http://dx.doi.org/10.1063/1.107018 (3 pages) | Cited 10 times

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The addition of a simple inexpensive magnetic multipole to a parallel plate triode results in a magnetic enhanced etch reactor configuration that has impressive low pressure characteristics. The multipole electrode which is in the form of a cylindrical multipolar bucket, open at both ends, is added to the powered electrode of the triode being employed as a plasma etching system. The multipole becomes, in effect, an extension of the ground shield, surrounding either electrode. The resulting electrode configuration produces an extremely uniform, dense plasma at pressures as low as 2–3×10−4 Torr. The effect of the magnetic enhancement (electron containment, uniformity profile modification, and low substrate bias) is particularly pronounced at lower pressures. Significant improvement over existing triode schemes is obtained using the grounded cylindrical multipolar bucket as an extension of the ground shield of the driven electrode (not the substrate electrode). This system is considerably simpler than dual frequency driven trielectrode systems since it uses 13.56 MHz excitation of both electrodes.
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52.75.-d Plasma devices
85.40.Hp Lithography, masks and pattern transfer
81.65.-b Surface treatments

Atomic resolved material displacement on graphite surfaces by scanning tunnelling microscopy

Philip Moriarty and Greg Hughes

Appl. Phys. Lett. 60, 2338 (1992); http://dx.doi.org/10.1063/1.107019 (3 pages) | Cited 8 times

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Atomic scale modifications and subsequent atomic resolution imaging has been achieved on the highly oriented pyrolytic graphite surface in air. Application of short pulse voltages, above a minimum threshold voltage of 3.5 V, across the tunneling gap results in the displacement of a layer or more of atoms to form a hole and create a neighboring mound or ‘‘nanodot’’ from the displaced atoms. We have found a correlation between the hole and ‘‘nanodot’’ volume at the atomic level and observe an asymmetric displacement of material in all cases of feature creation. Nanofeatures as small as four carbon atoms at beta sites have been created. Our experimental observations are consistent with the modification process depending on the gradient in the electric field induced by the rise time of the bias pulse voltage and not the pulse duration. Interesting faceting behavior has also been observed around some hole edges. Tip bias pulsing sometimes induced a tip, and not a surface modification, resulting in a change in the observed tunneling image.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Growth of GaAs/ErAs/GaAs structures by migration‐enhanced epitaxy

Hiroshi Yamaguchi and Yoshiji Horikoshi

Appl. Phys. Lett. 60, 2341 (1992); http://dx.doi.org/10.1063/1.107020 (3 pages) | Cited 9 times

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Monocrystalline GaAs/ErAs/GaAs structures are fabricated by migration‐enhanced epitaxy at 320 °C. When the ErAs layer thickness is less than 3 monolayers, reflection high‐energy electron diffraction patterns, double crystal x‐ray diffraction analysis, and transmission electron microscopy observations show successful overgrowth of GaAs on the ErAs layer. Distinct satellite peaks are observed in an x‐ray rocking curve of an ErAs/GaAs superlattice grown under a similar condition, indicating that high‐quality multilayer structures with very thin ErAs layers can be fabricated by migration‐enhanced epitaxy.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

X‐ray photoelectron spectroscopy of initial stages of nucleation and growth of diamond thin films during plasma assisted chemical vapor deposition

M. M. Waite and S. I. Shah

Appl. Phys. Lett. 60, 2344 (1992); http://dx.doi.org/10.1063/1.107474 (3 pages) | Cited 39 times

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We have carried out x‐ray photoelectron spectroscopy on diamond thin films deposited by microwave assisted chemical vapor deposition technique using a H2‐CH4 plasma. Films grown for different lengths of time, from 1 min to several hours, were analyzed for the surface composition in the C 1s and Si 2p regions. The results indicate the presence of SiC in the initial stage of nucleation due to the carbon interaction with the Si substrate. Graphite starts to form in early stages of nucleation as the substrate becomes supersaturated with carbon. A diamond peak starts to appear after the incubation period and a simultaneous decrease in the carbide and graphite peak intensities was observed. Graphite is preferentially etched during the growth but SiC remains as an impurity even after several hours of deposition.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
68.55.Nq Composition and phase identification

Torsional modulus of vapor‐grown carbon fibers

Jianhui Chen, Yan Lu, Daniel B. Church, and Dinesh Patel

Appl. Phys. Lett. 60, 2347 (1992); http://dx.doi.org/10.1063/1.107021 (3 pages)

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The torsional modulus (G) of vapor‐deposited carbon fibers of both as‐grown and annealed samples were determined with a torsion pendulum. G is found to be both stress and size dependent. The extrapolated zero‐stress value of torsional modulus is 105±5 GPa for a 5.4 μm diameter as‐grown fiber and 200±10 GPa for a 8.4 μm diameter annealed fiber. G decreases with increasing diameter. These unusually high values of torsional moduli, compared to other types of carbon fibers, are believed to be the results of the tree‐ring structural morphology and the degree of graphitization of these vapor‐deposited carbon fibers.
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62.20.D- Elasticity
68.35.Gy Mechanical properties; surface strains
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

High‐resolution electroless deposits on alumina from ultraviolet exposure of a Pt metalorganic

Andrew M. Mance

Appl. Phys. Lett. 60, 2350 (1992); http://dx.doi.org/10.1063/1.107022 (3 pages) | Cited 4 times

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Photochemical and electroless metallization techniques have been combined to create metal patterns on alumina (Al2O3). In this positive imaging process, small amounts of an ultraviolet (uv) sensitive metalorganic (MO) Pt compound are first applied to the surface of the alumina by spin coating. A quartz photomask is then used to selectively expose the Pt MO to uv light in the areas that are to be metallized. After a xylene rinse removes the Pt MO from the unexposed areas, the substrate and xylene insoluble Pt MO are fired in air at 450 °C for 5 min, followed by electroless deposition of Ni on the uv exposed surface. Total Pt consumption is to about 0.01–0.02 g/m2 of metallized surface−no Pt or Ni was detected in nonmetallized regions. The uv exposure time is brief, ≤0.75 s, and 0.3‐μm‐thick Ni/B deposits can be patterned on 96% pure alumina with resolution of nearly 28 μm line/spaces.
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85.40.Ls Metallization, contacts, interconnects; device isolation
85.40.Hp Lithography, masks and pattern transfer
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light
82.45.-h Electrochemistry and electrophoresis

In situ energy dispersive x‐ray reflectivity measurements of H ion bombardment on SiO2/Si and Si

E. Chason, T. M. Mayer, A. Payne, and D. Wu

Appl. Phys. Lett. 60, 2353 (1992); http://dx.doi.org/10.1063/1.107023 (3 pages) | Cited 19 times

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We have performed in situ, energy‐dispersive x‐ray reflectivity measurements of damage layer formation and surface roughness of thin films of SiO2 on Si and clean Si during H ion bombardment. The reflectivity was analyzed using an optical multilayer model where the variable parameters are the number of layers, the thickness and density of the layers, and the surface roughness. Room temperature ion bombardment at doses <5×1017/cm2 results in a buried layer between the oxide and the substrate; 300 eV bombardment produces a very thin, low‐density layer, while 1000 eV bombardment produces a thicker layer with the density of amorphous silicon. A damaged layer is not produced by equivalent bombardment at high temperature. Ion bombardment of clean Si surfaces at 500 °C resulted in roughening of the surface on the nanometer scale which is strongly dependent on the ion energy.
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81.65.-b Surface treatments
61.80.Jh Ion radiation effects
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.

Solvation forces near a graphite surface measured with an atomic force microscope

S. J. O’Shea, M. E. Welland, and T. Rayment

Appl. Phys. Lett. 60, 2356 (1992); http://dx.doi.org/10.1063/1.107024 (3 pages) | Cited 59 times

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Solvation force interactions in a liquid near a solid wall (graphite) were investigated using an atomic force microscope. The general features of the data show the distinctive oscillatory force curve associated with solvation forces, with a mean periodicity approximately equal to the minimum dimensions of the molecules. Moreover, the graphite surface can still be imaged with atomic resolution; which suggests that the technique can be used for the detailed study of short range forces over specific parts of various surfaces.
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68.43.-h Chemisorption/physisorption: adsorbates on surfaces

Microstructural investigations of light‐emitting porous Si layers

T. George, M. S. Anderson, W. T. Pike, T. L. Lin, R. W. Fathauer, K. H. Jung, and D. L. Kwong

Appl. Phys. Lett. 60, 2359 (1992); http://dx.doi.org/10.1063/1.107025 (3 pages) | Cited 57 times

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The structural and morphological characteristics of visible‐light‐emitting porous Si layers produced by anodic and stain etching of single‐crystal Si substrates are compared using transmission electron microscopy and atomic force microscopy (AFM). AFM of conventionally anodized, laterally anodized and stain‐etched Si layers show that the layers have a fractal‐type surface morphology. The anodized layers are rougher than the stain‐etched films. At higher magnification 10 nm sized hillocks are visible on the surface. Transmission electron diffraction patterns indicate an amorphous structure with no evidence for the presence of crystalline Si in the near‐surface regions of the porous Si layers.
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78.55.Hx Other solid inorganic materials
81.40.Tv Optical and dielectric properties related to treatment conditions
81.65.-b Surface treatments
68.35.B- Structure of clean surfaces (and surface reconstruction)

Voltage‐controlled tunable GaAs/AlGaAs multistack quantum well infrared detector

I. Gravé, A. Shakouri, N. Kuze, and A. Yariv

Appl. Phys. Lett. 60, 2362 (1992); http://dx.doi.org/10.1063/1.107026 (3 pages) | Cited 38 times

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We describe a new type of intersubband GaAs/AlGaAs infrared detector consisting of three stacks of quantum wells; the quantum wells in a given stack are identical, but are different from stack to stack. Each stack is designed to yield an absorption and a photoresponse at a different peak wavelength. The resulting device is an infrared detector which can operate in a number of modes. Among the features of this device are a wide‐band detection domain, a tunable response and excellent responsivities and noise figures. The tunable operation includes a sharp peak‐switching response which follows the formation, expansion, and readjustment of electric field domains within the multiquantum well region.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.De Semiconductor-device characterization, design, and modeling
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Growth of InGaAs/InP optical modulator structures by chemical beam epitaxy

T. H. Chiu, K. W. Goossen, M. D. Williams, and F. G. Storz

Appl. Phys. Lett. 60, 2365 (1992); http://dx.doi.org/10.1063/1.107027 (3 pages) | Cited 3 times

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We show that the alloy composition and the period length of InGaAs/InP multiple quantum wells grown by chemical beam epitaxy is sensitive to the growth temperature and the As overpressure. Around 530 °C, the inhomogeneous broadening of absorption edge due to growth temperature instability is more of a consequence of changing period length than the ternary composition. The arsenic overpressure dependence of the ternary composition is investigated by secondary ion mass spectroscopy for the first time. The Ga/In ratio becomes smaller at high arsine flow rate. Superlattices containing 50–100 periods of InGaAs/InP exhibit x‐ray diffraction peak widths comparable to the InP substrate can be prepared under continuous growth mode. Clear quantum confined Stark effect is observed in the electroabsorption characteristics of a 74‐period modulator.
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68.55.-a Thin film structure and morphology
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.79.Hp Optical processors, correlators, and modulators

Growth and characterization of Zn1−xMnxTe epilayers grown by hot wall epitaxy on (001)GaAs substrates

E. Abramof, A. Pesek, P. Juza, H. Sitter, T. Fromherz, and W. Jantsch

Appl. Phys. Lett. 60, 2368 (1992); http://dx.doi.org/10.1063/1.107028 (3 pages) | Cited 8 times

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In this letter we report the first growth of Zn1−xMnxTe epitaxial films. The films were grown by hot wall epitaxy on 2° misoriented (001) GaAs substrates up to a Mn concentration of 70%. The Mn content was determined by optical reflection and x‐ray diffraction. All the epilayers (0.0≤x≤0.7) grew in the [001] direction in the zinc‐blende structure. The full width at half maximum of the (004) reflex of the x‐ray rocking curves proved the good crystalline quality of the grown layers and increased monotonically as the Mn content increased. The relative tilt between epilayer and substrate was also determined from high resolution x‐ray diffraction.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase

Twin formation in Ag seeded Co/Pt multilayers grown on GaAs by molecular beam epitaxy

N.‐H. Cho, Kannan M. Krishnan, C. H. Lee, and R. F. C. Farrow

Appl. Phys. Lett. 60, 2371 (1992); http://dx.doi.org/10.1063/1.107029 (3 pages) | Cited 4 times

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Molecular beam epitaxy was used to grow ultrathin Co‐Pt multilayers on GaAs (111) substrates with 200 Å thick Ag layer as a buffer. Magnetic properties (B‐H loop) of the multilayers, measured by a vibrating sample magnetometer, confirmed that these samples exhibit strong anisotropy perpendicular to the film surface. Reflection high energy electron diffraction and low‐energy electron diffraction showed that twin‐related Ag grains nucleated on the substrates. The epitaxial relationship of the multilayers with respect to the substrate was investigated by high‐resolution transmission electron microscopy. Twin‐related grains, 30–40 nm in diameter, are present in the multilayers. These twins are generated either by propagation of existing twin boundaries in the Ag layer into the multilayers or by nucleation of twin‐related Pt grains on the Ag buffer surface.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.Mm Grain and twin boundaries
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

Donor level of interstitial hydrogen in GaP

B. Clerjaud, D. Côte, W. ‐S. Hahn, D. Wasik, and W. Ulrici

Appl. Phys. Lett. 60, 2374 (1992); http://dx.doi.org/10.1063/1.107030 (3 pages) | Cited 12 times

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The nitrogen‐hydrogen complex in GaP is evidenced by its stretching local vibrational mode. H+ is probed through the formation of the C‐H complex and H0 through the formation of the N‐H complex. The corresponding donor level H0/H+ is shown to be located around 0.3 eV above the valence band maximum.
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71.55.Eq III-V semiconductors
78.30.Fs III-V and II-VI semiconductors

Incorporation of silicon and aluminum in low temperature molecular beam epitaxial GaAs

M. O. Manasreh, K. R. Evans, C. E. Stutz, D. C. Look, and J. Hemsky

Appl. Phys. Lett. 60, 2377 (1992); http://dx.doi.org/10.1063/1.107031 (3 pages) | Cited 3 times

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The localized vibrational modes (LVMs) of silicon donor (SiGa) and aluminum isovalent (AlGa) impurities in molecular beam epitaxial GaAs layers grown at various temperatures are studied using the infrared absorption technique. It is found that the total integrated absorption of these impurities LVMs is decreased as the growth temperature decreases. This finding suggests a nonsubstitutional incorporation of Si and Al in GaAs layers grown at 200 °C. On the other hand, a subtitutional incorporation is obtained in GaAs layers grown at temperatures higher than 350 °C. A recovery of the SiGa LVMs in GaAs layers grown at 200 °C has not been achieved by thermal annealing.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.30.Fs III-V and II-VI semiconductors

δ‐doped AlGaAs and AlGaAs/InGaAs high electron mobility transistor structures grown by metalorganic chemical vapor deposition

G. M. Yang, S. G. Park, K. S. Seo, and B. D. Choe

Appl. Phys. Lett. 60, 2380 (1992); http://dx.doi.org/10.1063/1.107003 (3 pages) | Cited 11 times

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We have successfully grown δ‐doped AlGaAs structures and δ‐doped AlGaAs/InGaAs pseudomorphic high electron mobility transistor (HEMT) structures by atmospheric pressure metalorganic chemical vapor deposition (MOCVD). Capacitance‐voltage (C‐V) profiles with full‐width at half‐maximum as small as 32 Å demonstrate very narrow doping profiles of δ‐doped AlGaAs layers grown at 650–700 °C. Theoretical C‐V profiles of δ‐doped AlGaAs have been self‐consistently calculated with the L valley taken into account and compared with the experimental results. A δ‐doped AlGaAs/InGaAs pseudomorphic HEMT structure with a 30 Å spacer layer yields a sheet carrier concentration of 2.25×1012 cm−2 with an electron mobility of 20 300 cm2/V s at 77 K.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Coimplantation and electrical activity of C in GaAs: Stoichiometry and damage effects

A. J. Moll, Kin Man Yu, W. Walukiewicz, W. L. Hansen, and E. E. Haller

Appl. Phys. Lett. 60, 2383 (1992); http://dx.doi.org/10.1063/1.107004 (3 pages) | Cited 23 times

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We have coimplanted carbon and a series of elements (B, N, Al, P, Ar, Ga, As, and Kr) in GaAs to study the effect of both implant damage and stoichiometry on activation. Electrical activity of C was found to increase due to the additional damage caused by coimplantation of a heavy element regardless of the chemical nature of the coimplant. Maintaining stoichiometry by coimplanting a group III element further increased activation in substrates heavily damaged during implantation. Activation of 65±3%, corresponding to a sheet free‐carrier concentration of 3.5×1014 cm−2, was achieved by coimplanting Ga and annealing at 950 °C for 10 s.
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61.72.U- Doping and impurity implantation
61.80.Jh Ion radiation effects
71.55.Eq III-V semiconductors
61.72.Bb Theories and models of crystal defects

Electron effective mass and band‐gap dependence on alloy composition of AlyGaxIn1−y−xAs, lattice matched to InP

R. F. Kopf, H. P. Wei, A. P. Perley, and G. Livescu

Appl. Phys. Lett. 60, 2386 (1992); http://dx.doi.org/10.1063/1.107005 (3 pages) | Cited 26 times

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AlyGaxIn1−y−xAs structures were prepared by molecular beam epitaxy to determine both the electron effective mass and band‐gap dependence of the InP lattice‐matched alloy. Cyclotron resonance and photoluminescence measurements were used, respectively. The effective mass obtained after nonparabolicity correction is m∗=0.0403+0.0817y. The band‐gap relationships obtained at 300 and 5.5 K are Eg (eV)=0.752+1.453y, and Eg (eV)=0.792+1.530y, respectively.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Si‐SiO2 interface states enhanced by oxidation‐induced stacking faults

H. Yoshida, M. Ohmori, H. Niu, S. Kishino, H. Tanaka, and T. Nakashizu

Appl. Phys. Lett. 60, 2389 (1992); http://dx.doi.org/10.1063/1.107006 (2 pages) | Cited 1 time

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It has been observed for the first time that interface states of Si metal‐oxide‐semiconductor diode are enhanced by the influence of oxidation‐induced stacking faults (OSF). The observation has been carried out by isothermal capacitance transient spectroscopy measurement, using two kinds of samples. The samples are cut from the same CZ‐Si wafer with ‘‘ring OSF.’’ One is prepared from the region with ‘‘ring OSF’’ and the other is prepared from the defect‐free region.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.-r Electron states at surfaces and interfaces
61.72.Nn Stacking faults and other planar or extended defects

Pressure study of proximity effect induced scaling magnetoresistance in GaAs

L. Ghenim and R. G. Mani

Appl. Phys. Lett. 60, 2391 (1992); http://dx.doi.org/10.1063/1.107007 (3 pages) | Cited 2 times

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A proximity effect induced scaling magnetoresistance observed in n‐GaAs, n∼1019 cm−3, has been studied versus hydrostatic pressure, P, to 7 kbars. The scaling magnetoresistance is shown to be a homogeneous function of the magnetic field, B, and the pressure‐dependent reduced temperature, τ(P)=[Tc(P)−T]/Tc(P), as ΔR/R‖s (T,B,P)=A0[τ(P)] f{B/[τ(P)]}, where Tc(P)=3.5 K−(0.06 K/kbar) P, and A0 is pressure independent. These results suggest that the pressure induced occupation of DX centers does not suppress the proximity effect in GaAs.
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72.20.My Galvanomagnetic and other magnetotransport effects
72.20.Fr Low-field transport and mobility; piezoresistance
74.50.+r Tunneling phenomena; Josephson effects
71.55.Eq III-V semiconductors
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