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6 Jan 1992

Volume 60, Issue 1, pp. 1-140

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Growth mode and strain relaxation during the initial stage of InxGa1−xAs growth on GaAs(001)

M. Lentzen, D. Gerthsen, A. Förster, and K. Urban

Appl. Phys. Lett. 60, 74 (1992); http://dx.doi.org/10.1063/1.107379 (3 pages) | Cited 17 times

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The growth mode and relaxation of the misfit strain of thin InxGa1−xAs layers grown by molecular‐beam epitaxy on GaAs(001) were studied by plan‐view transmission electron microscopy. The indium concentration was varied between x=0.13 and x=1.0. The transition from two‐dimensional to island growth was found at x=0.4. The island growth mode is characterized by islands of different sizes in various states of strain relaxation which is determined by the density of misfit dislocations at the interface.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Electroluminescence from bipolar resonant tunneling diodes

C. Van Hoof, J. Genoe, R. Mertens, G. Borghs, and E. Goovaerts

Appl. Phys. Lett. 60, 77 (1992); http://dx.doi.org/10.1063/1.107380 (3 pages) | Cited 32 times

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The incorporation of an AlAs/GaAs resonant tunneling structure inside a GaAs p‐n junction leads to strong quantum‐well electroluminescence originating from electron and hole tunneling into the resonant tunneling structure. A large peak‐to‐valley ratio of 10:1 in the electroluminescence intensity is achieved at the electron resonance at 4.2 K, which decreases but persists (1.45:1) at room temperature. Resonant tunneling of holes is also apparent from the electroluminescence at low temperature.
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78.60.Fi Electroluminescence
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
85.60.Jb Light-emitting devices
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Effects of thin SiO2 capping layer on silicon‐on‐insulator formation by lateral solid‐phase epitaxy

K. Kusukawa, M. Ohkura, M. Moniwa, and M. Miyao

Appl. Phys. Lett. 60, 80 (1992); http://dx.doi.org/10.1063/1.107381 (2 pages) | Cited 4 times

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The effects of a SiO2 capping layer over an amorphous Si surface on the lateral solid‐phase epitaxy of Si are investigated. A thin SiO2 layer (about 5 nm) chemically grown on the deposited amorphous layer reduces the lateral crystal growth length. In addition, observations using a transmission electron microscope reveal that crystal defects are formed during lateral growth at the interface of the surface SiO2 and the deposited amorphous Si layer. These crystal defects are thought to be responsible for the reduction in crystal growth.
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81.15.Np Solid phase epitaxy; growth from solid phases
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.65.-b Surface treatments

Photoluminescence on high‐quality AlxGa1−xAs grown by metalorganic vapor‐phase epitaxy using alane bis(dimethylethylamine)

S. M. Olsthoorn, F. A. J. M. Driessen, L. J. Giling, D. M. Frigo, and C. J. Smit

Appl. Phys. Lett. 60, 82 (1992); http://dx.doi.org/10.1063/1.107382 (3 pages) | Cited 7 times

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Photoluminescence (PL) spectra are reported of initial results of AlxGa1−xAs grown by metalorganic vapor‐phase epitaxy (MOVPE), using a new precursor, alane bis(dimethylethylamine), as the aluminum source. The advantage of this new precursor over other alane precursors used previously is that it is liquid at room temperature. Using this new precursor instead of trimethylaluminum (TMAl), we found a reduction by a factor 6 in carbon incorporation when it was used together with trimethylgallium (TMGa), whereas a reduction by a factor 50 was found when it was used in combination with triethylgallium (TEGa). At low excitation density the linewidth of the separate donor bound exciton (D0,X) was 2.6 meV at an Al fraction of 0.31. This is comparable with the smallest values ever reported in literature for MOVPE‐grown AlxGa1−xAs with an Al fraction higher than 20%. This narrow linewidth indicates a very uniform aluminum composition.
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68.55.-a Thin film structure and morphology
78.55.Cr III-V semiconductors

New doped multiple‐quantum‐well avalanche photodiode: The doped barrier Al0.35Ga0.65As/GaAs multiple‐quantum‐well avalanche photodiode

P. Aristin, A. Torabi, A. K. Garrison, H. M. Harris, and C. J. Summers

Appl. Phys. Lett. 60, 85 (1992); http://dx.doi.org/10.1063/1.107383 (3 pages) | Cited 9 times

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The performance of doped barrier, multiple‐quantum‐well avalanche photodiodes (MQW APDs) is reported for the first time. Investigations are presented for a 800 Å/200 Å MQW Al0.35Ga0.65As/GaAs undoped structure with a p‐n junction in each barrier. The devices exhibit low dark currents, low breakdown voltages (−10 V), and gains up to 20 for electron injection. Noise measurements show an enhancement of the electron to hole ionization rates ratio, α/β, to values between 50 and 12.5 for gains up to 5, and to 5 for gains above 5. α/β is enhanced by a factor of 6 over the bulk GaAs, and a factor of at least 2 over the simple MQW APD. The particular design we report provides medium gain and very‐low‐noise characteristics at low bias voltage. These experimental noise results are the best reported so far for AlGaAs/GaAs MQW APD structures.
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85.60.Dw Photodiodes; phototransistors; photoresistors

Influence of the delta doping position in the channel on the device performance of AlGaAs/InGaAs modulation‐doped field‐effect transistors

J. Dickmann

Appl. Phys. Lett. 60, 88 (1992); http://dx.doi.org/10.1063/1.107384 (3 pages) | Cited 7 times

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We present an experimental and theoretical investigation of the influence of delta doping in the InGaAs channel on the device performance of Al0.25Ga0.75As/In0.2Ga0.8As/GaAs pseudomorphic modulation‐doped field‐effect transistors (MODFETs). Self‐consistent calculations of the band structure were used to determine the optimum spike position to introduce the doping into the channel. The results of our calculations lead to a new device approach, the backside pulse‐doped channel MODFET. The device uses a narrow doping pulse at the backside interface of the InGaAs layer. For this kind of layer structure, the calculations predict that the interaction between electrons and donors and thereby the transport properties of the electrons in the channel can be modulated with applied gate voltage. At positive gate voltage the device operates in the conventional high electron mobility transistor mode, whereas at lower voltages a metal‐semiconductor field‐effect transistor‐like behavior is observed. This has been experimentally confirmed for devices with a 2‐nm‐wide doping pulse located at the backside interface of the InGaAs/GaAs layers. For these devices with 0.35‐μm gate length we measured a maximum saturation current as high as 800 mA/mm with a transconductance of 430 mS/mm.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Isoelectronic oxygen in II‐VI semiconductors

K. Akimoto, H. Okuyama, M. Ikeda, and Y. Mori

Appl. Phys. Lett. 60, 91 (1992); http://dx.doi.org/10.1063/1.107385 (3 pages) | Cited 28 times

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The properties of isoelectronic oxygen in II‐VI semiconductors were studied by photoluminescence measurements. It was found that oxygen in CdTe, CdS, and ZnS can act as an acceptor as well as in ZnSe, and that the acceptor levels of oxygen in CdTe, CdSe, and ZnS are shallower than those of typical acceptors such as Na. Charge transfer from the host lattice to the oxygen atom may play an important role in oxygen acting as an acceptor. Based on the charge‐transfer model, it can be qualitatively interpreted that there are two roles of oxygen in II‐VI compounds: acting as an acceptor or as a trap, and that they are classified by the ionicity of the compound. We also now understand better the chemical trend of the oxygen‐acceptor levels becoming more shallow compared to the typical acceptors.
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71.55.Gs II-VI semiconductors
78.55.Et II-VI semiconductors

Side gating in δ‐doped quantum wires

Y. Feng, T. J. Thornton, J. J. Harris, and D. Williams

Appl. Phys. Lett. 60, 94 (1992); http://dx.doi.org/10.1063/1.107386 (3 pages) | Cited 11 times

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We have used a side gating technique to vary the width of narrow wires made from δ‐doped GaAs. The wires show pronounced quantum interference effects which can be used to determine the wire width and electron phase coherence length as a function of gate voltage. At zero gate bias the depletion from the etched surfaces is very small because of the high electron density and the electrical width of the wires is therefore only slightly smaller than the physical width.  
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73.61.Ey III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
85.30.Tv Field effect devices

Time resolved measurements of cross‐well transport in a multiple quantum well p‐i‐n modulator at high photogenerated carrier densities

A Miller, C. B. Park, and P. LiKamWa

Appl. Phys. Lett. 60, 97 (1992); http://dx.doi.org/10.1063/1.107387 (3 pages) | Cited 15 times

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Carrier sweep‐out rates from GaAs/AlGaAs multiple quantum wells have been measured as a function of excitation level on picosecond time scales at different values of applied electric field. A minimum rate of ∼20 ps was observed under resonant tunneling conditions at low generated carrier densities. At higher excitation levels, the effects of space charge build‐up were found to significantly alter the transient nonlinear optical response due to changes in the time constant associated with vertical carrier transport.  
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling

Relationship between nonlinear resistivity and the varistor forming mechanism in ZnO ceramics

N. Raghu and T. R. N. Kutty

Appl. Phys. Lett. 60, 100 (1992); http://dx.doi.org/10.1063/1.107360 (3 pages) | Cited 4 times

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The use of a number of perovskite phases M″ M′O3−x, as the only forming additive in ZnO ceramics, produces a high nonlinearity index, α(up to 45), where M′ is a multivalent transition‐metal ion and M″ is an alkaline earth or a rare‐earth ion. From this study, the formation parameters crucial to high nonlinearity, such as nonstoichiometry in the as‐received ZnO powder, low x values of the additives and fast cooling rate after the sintering, are explainable on the basis of a depletion layer formation at the presintering stage. This is because of the surface states arising out of the chemisorbed oxygen. The depletion layer is retained during sintering as a result of the higher valence state of M′ ions, preferentially present at the grain‐boundary regions. The fast cooling freezes in the high‐temperature concentration of donor‐type defects, thereby decreasing the depletion layer width.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
84.32.Ff Conductors, resistors (including thermistors, varistors, and photoresistors)

Normal incidence infrared detector using p‐type SiGe/Si multiple quantum wells

J. S. Park, R. P. G. Karunasiri, and K. L. Wang

Appl. Phys. Lett. 60, 103 (1992); http://dx.doi.org/10.1063/1.107361 (3 pages) | Cited 48 times

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The photoresponse of p‐type SiGe/Si multiple quantum well infrared detectors is measured as a function of incidence beam polarization. With the infrared (IR) beam polarized in the growth direction, a photoresponse peak is observed at near 8.6 μm with a full width at half maximum (FWHM) of about 80 meV. On the other hand, with the beam polarized parallel to the growth plane (normal incidence), a peak is observed at near 7.2 μm with nearly the same FWHM. The photoresponse at peak positions is about 0.3 A/W for both cases. With an unpolarized beam, the peak photoresponse of about 0.6 A/W is observed for the present unoptimized structure. The results of the detection of normal incidence IR suggest possible applications of SiGe/Si multiple quantum wells for normal incidence IR detection.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.50.Pz Photoconduction and photovoltaic effects

Reflection and refraction of ballistic electrons through different carrier concentration regions

Yoshino K. Fukai, Seigo Tarucha, Yoshiro Hirayama, Yasuhiro Tokura, and Tadashi Saku

Appl. Phys. Lett. 60, 106 (1992); http://dx.doi.org/10.1063/1.107362 (3 pages)

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Transmission and reflection characteristics of ballistic electrons are studied in a macroscopic four‐terminal square device with a strip Schottky gate placed so as to bisect the device. Since the gate is negatively biased, a bend resistance peak at zero magnetic field, which is induced by ballistic electron injection into an opposite voltage probe, varies from positive to negative, and a magnetic focusing peak shifts to a lower field. These phenomena arise from the reflection of ballistic electrons crossing regions of different electron densities. The transmission and reflection probabilities are determined as a function of gate voltage, and are related to the change in the refractive index of ballistic electrons.
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73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.30.+y Surface double layers, Schottky barriers, and work functions
72.20.My Galvanomagnetic and other magnetotransport effects

Novel strained InP/InAsxP1−x quantum‐well modulation‐doped heterostructures

W.‐P. Hong, R. Bhat, J. Hayes, F. DeRosa, M. Leadbeater, and M. Koza

Appl. Phys. Lett. 60, 109 (1992); http://dx.doi.org/10.1063/1.107363 (3 pages) | Cited 15 times

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We report the first investigation of transport properties of two‐dimensional electron systems in strained InAsxP1−x quantum‐well channels. The InP/InAsxP1−x modulation‐doped heterostructures were grown by the low‐pressure OMCVD technique. The dependence of the transport parameters on the arsenic composition (x) has been studied using Hall, Shubnikov de Haas, and cyclotron resonance measurements. Hall mobilities of 6100 and 52 700 cm2/V s, with carrier concentrations of 2.3×1012 and 1.5×1012 cm−2 at 300 and 77 K, respectively, were measured for x=0.6.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Dn Low-field transport and mobility; piezoresistance
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ey III-V semiconductors

Correlation of Raman and photoluminescence spectra of porous silicon

R. Tsu, H. Shen, and M. Dutta

Appl. Phys. Lett. 60, 112 (1992); http://dx.doi.org/10.1063/1.107364 (3 pages) | Cited 140 times

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The discovery of luminescence in electrochemically etched porous silicon is an extremely important scientific breakthrough with enormous technological implications. It opens the door for silicon, the most important microelectronic material, as a possible material for optoelectronics applications. Our result, a correlation of Raman and photoluminescence spectra, shows that the observed luminescence is originated from extremely small microstructures. As the luminescent peak increases in photon energy, the Raman feature shifts to lower energy, remaining sharp, and eventually splits, developing into TO and LO modes. No peak at 480 cm−1 is observed, which indicates no substantial contribution from an amorphous region. These data provide strong evidence of the role of microstructures in porous silicon.
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78.55.Hx Other solid inorganic materials
78.30.Hv Other nonmetallic inorganics

Doping in semiconductors with variable activation energy

W. T. Tsang, E. F. Schubert, and J. E. Cunningham

Appl. Phys. Lett. 60, 115 (1992); http://dx.doi.org/10.1063/1.107365 (3 pages) | Cited 3 times

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A concept of doping that permits for the first time the freedom to design the desired activation energy of a dopant in a semiconductor is introduced and demonstrated. This doping engineering (DE) may also offer the possibility of achieving dopings in semiconductors in which a normally employed doping process is not successful, such as in wide band‐gap II‐VI semiconductors. Experimentally, we demonstrated that the normal activation energy, ∼19–25 meV of berrylium (Be) in GaAs was reduced to 4 meV in DE GaAs/δ‐Al0.3Ga0.7As(Be) sample.
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68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.72.S- Impurities in crystals
71.55.-i Impurity and defect levels

Highly oriented YBa2Cu4O8 films fabricated at atmospheric pressure by the sol–gel method using metal alkoxides

Shingo Katayama, Masahiro Sekine, Hiroshi Fudouzi, and Makoto Kuwabara

Appl. Phys. Lett. 60, 118 (1992); http://dx.doi.org/10.1063/1.107366 (2 pages) | Cited 2 times

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YBa2Cu4O8 films were fabricated at atmospheric pressure by the sol–gel method using metal alkoxides. Gel films on Ag substrates, prepared from a heterometallic alkoxide solution, were fired at 800 °C for 10 h to yield highly oriented YBa2Cu4O8 films. Simultaneously using both the sol–gel method and Ag as a substrate was found to be remarkably effective for promoting the formation of the YBa2Cu4O8 phase and producing highly oriented films.  
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures

High Tc thin films with roughness smaller than one unit cell

O. Nakamura, Eric E. Fullerton, J. Guimpel, and Ivan K. Schuller

Appl. Phys. Lett. 60, 120 (1992); http://dx.doi.org/10.1063/1.107343 (3 pages) | Cited 38 times

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We have developed a method for the growth of epitaxial high Tc superconducting thin films with roughness smaller than one unit cell using conventional magnetron sputtering. In this method the substrate is positioned above one edge of the target (off axis) to avoid resputtering, and oscillated back and forth between the two symmetrical edges of the target to improve film thickness homogeneity. Finite size peaks in the x‐ray diffraction spectra of thin GdBa2Cu3O7−δ films and satellite peaks on a GdBa2Cu3O7−δ/YBa2Cu3O7−δ superlattice show the excellent thickness control and smoothness obtained with this technique.
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74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
74.78.Fk Multilayers, superlattices, heterostructures
81.15.Cd Deposition by sputtering

Performance prediction of high Tc superconducting small antennas using a two‐fluid‐moment method model

G. G. Cook, S. K. Khamas, S. P. Kingsley, and R. C. Woods

Appl. Phys. Lett. 60, 123 (1992); http://dx.doi.org/10.1063/1.107344 (3 pages) | Cited 3 times

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The radar cross section and Q factors of electrically small dipole and loop antennas made with a YBCO high Tc superconductor are predicted using a two‐fluid‐moment method model, in order to determine the effects of finite conductivity on the performances of such antennas. The results compare the useful operating bandwidths of YBCO antennas exhibiting varying degrees of impurity with their copper counterparts at 77 K, showing a linear relationship between bandwidth and impurity level.
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84.40.Ba Antennas: theory, components and accessories
74.70.-b Superconducting materials other than cuprates
74.25.N- Response to electromagnetic fields

Optically detected transient thermal response of high Tc epitaxial films

C. G. Levey, S. Etemad, and A. Inam

Appl. Phys. Lett. 60, 126 (1992); http://dx.doi.org/10.1063/1.107345 (3 pages) | Cited 14 times

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A thermally induced transient absorption is found to accompany the unusually fast and sensitive bolometric response of thin YBa2Cu3O7 films. We utilize this optical signature as an internal thermometer to investigate thermal transients in both superconducting films and their undoped isomorphs. In the temperature range 10–300 K we find that the combination of a small thermal film mass and a large film‐substrate interface resistance results in large transient temperatures. Superconducting and nonsuperconducting films show comparable temperature rises and kinetics.
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74.70.-b Superconducting materials other than cuprates
74.25.Bt Thermodynamic properties
78.66.-w Optical properties of specific thin films
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Structure and magnetic properties of R2Fe17Cx (x∼2.5)

L. X. Liao, X. Chen, Z. Altounian, and D. H. Ryan

Appl. Phys. Lett. 60, 129 (1992); http://dx.doi.org/10.1063/1.107346 (3 pages) | Cited 46 times

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A series of rare‐earth iron carbides were prepared by heat treatment of R2Fe17 compounds in methane. The nominal composition of these carbides is R2Fe17Cx, x∼2.5. The carbides retain the original Th2Zn17 or Th2Ni17 structure with a 6.5% volume expansion over the carbon‐free unit cell. For Sm2Fe17C2.5, the Curie temperature is 760 K and the easy magnetization direction is along the c axis. The anisotropy field of Sm2Fe17C2.5 at room temperature is 15±0.5 T.
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75.50.Vv High coercivity materials
81.40.Rs Electrical and magnetic properties related to treatment conditions
75.50.Bb Fe and its alloys

Electromechanical deflections of piezoelectric tubes with quartered electrodes

C. Julian Chen

Appl. Phys. Lett. 60, 132 (1992); http://dx.doi.org/10.1063/1.107348 (3 pages) | Cited 49 times

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The deflection of a piezoelectric tube, with the outer (or inner) metal coating sectioned into four quadrants, is analyzed. We show that by applying a voltage V on one of the quadrants, the electromechanical deflection is (√2d31VL2/πDh), where d31 is the piezoelectric coefficient, L is the length, D the diameter, and h the wall thickness of the tube. The deflections calculated with it agree well with the results of finite‐element calculations and direct experimental measurements. The formula can be used in the design and application of tube scanners in scanning tunneling microscopes and scanning force microscopes.
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77.65.-j Piezoelectricity and electromechanical effects
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
62.20.-x Mechanical properties of solids

Carbon K edge spectroscopy of internal interface and defect states of chemical vapor deposited diamond films

J. Nithianandam, J. C. Rife, and H. Windischmann

Appl. Phys. Lett. 60, 135 (1992); http://dx.doi.org/10.1063/1.107349 (3 pages) | Cited 28 times

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We have made carbon K edge reflectivity and absorption measurements using synchrotron radiation on diamond crystals and chemical vapor deposited diamond films to determine their electronic structures. Our spectra of diamond films show that both sp2 and sp3 bonded carbon atoms are formed during initial nucleation and growth. Transmission spectra of a diamond film with 30 nm diameter cystallites show striking features below the carbon sp3 K edge due to internal interface states and/or defects. We compare these absorption features to x‐ray absorption spectra of clean diamond (111) surface, graphite, and hydrocarbon gases to understand surface chemistry involved in the deposition process.
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73.20.-r Electron states at surfaces and interfaces
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Preparation of nickel nanoparticles by metalorganic route

A. Chatterjee and D. Chakravorty

Appl. Phys. Lett. 60, 138 (1992); http://dx.doi.org/10.1063/1.107350 (3 pages) | Cited 13 times

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Nickel particles of sizes in the range 5–11 nm have been prepared by the decomposition of a suitable metalorganic compound on the surfaces of micrometer‐sized potassium bromide crystallites. Infrared absorption spectra of nanocomposites comprising these particles dispersed in potassium bromide matrix have been delineated. Effective medium theory is used to explain the experimental results.
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81.20.-n Methods of materials synthesis and materials processing
78.30.-j Infrared and Raman spectra
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