APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

13 Jan 1992

Volume 60, Issue 2, pp. 145-260

Page 1 of 2 Pages Next Page | Jump to Page

Real‐time picosecond electro‐optic oscilloscope technique using a tunable semiconductor laser

A. Galvanauskas, J. A. Tellefsen, A. Krotkus, M. Öberg, and B. Broberg

Appl. Phys. Lett. 60, 145 (1992); http://dx.doi.org/10.1063/1.107456 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
The feasibility of using a tunable semiconductor laser for real‐time electro‐optic measurements of picosecond electrical signals is demonstrated. The method is based on real‐time amplitude modulation of a relatively long optical probe pulse, whose frequency is linearly swept (chirped) to provide temporal information. Such chirped optical probe pulses were obtained by fast tuning of the emission wavelength of a three‐sectional distributed‐Bragg‐reflector diode laser. An electrical‐pulse rise time of 18 ps was measured. Temporal‐resolution limitations of this type of electro‐optic oscilloscope are discussed.
Show PACS
85.60.-q Optoelectronic devices
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.Fc Modulation, tuning, and mode locking
06.60.Jn High-speed techniques (microsecond to femtosecond)

Formation and bleaching of strong ultraviolet absorption bands in germanium implanted synthetic fused silica

J. Albert, K. O. Hill, B. Malo, D. C. Johnson, J. L. Brebner, Y. B. Trudeau, and G. Kajrys

Appl. Phys. Lett. 60, 148 (1992); http://dx.doi.org/10.1063/1.106998 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
Germanium ions have been implanted in fused silica using ion beams having energies of 3 and 5 MeV and doses ranging from 1×1012 to 5×1014 ions/cm2. For wavelengths shorter than 400 nm, the optical absorption increases strongly with two absorption bands appearing at 244 and 212 nm. The ion‐induced optical absorption can be bleached almost completely by irradiation with 249 nm excimer laser light. Ion implantation also increases the refractive index of silica near the substrate surface. At 632.8 nm a refractive index increase of more than 10−2 has been measured. This decreases by 4×10−3 upon bleaching with 249 nm light.
Show PACS
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Resonant Stark tuning of second‐order susceptibility in coupled quantum wells

Carlo Sirtori, Federico Capasso, Deborah L. Sivco, A. L. Hutchinson, and Alfred Y. Cho

Appl. Phys. Lett. 60, 151 (1992); http://dx.doi.org/10.1063/1.106999 (3 pages) | Cited 46 times

Full Text: | Download PDF

Show Abstract
The first observation of the resonant Stark tuning of second harmonic generation is reported. Our AlInAs/GaInAs asymmetric coupled‐well structures are engineered in such a way that certain intersubband transitions (1→2 and 2→3) exhibit a large Stark shift equal to the potential drop between the centers of the wells. Thus the second‐order susceptibility ‖χ(2)2ω‖ exhibits a pronounced peak when the bound states are made equally spaced by the application of an electric field and ℏω=ΔE12. A peak ‖χ(2)2ω‖=7.5×10−8 m/V, approximately 200 times the bulk values in InAs and GaAs, has been measured.
Show PACS
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Continuous‐wave photoluminescence excitation spectra of multiple narrow‐stepped quantum wells: Evidence for saturation of interface traps

Y. J. Ding, C. L. Guo, S. Li, J. B. Khurgin, K.‐K. Law, and J. L. Merz

Appl. Phys. Lett. 60, 154 (1992); http://dx.doi.org/10.1063/1.107000 (3 pages) | Cited 18 times

Full Text: | Download PDF

Show Abstract
Continuous‐wave photoluminescence excitation spectra of multiple narrow‐stepped quantum wells at room temperature have been measured for the first time. It has been observed that photoluminescence intensity increases stronger than proportionally to the square of the laser intensity. This phenomenon can be attributed to the radiative recombination between free carriers in parallel with the dominant nonradiative recombination on the saturable interface traps. Intensity‐dependent trapping efficiency and ratio between electron and hole nonradiative decay times, and the ratio between trapping and nonradiative recombination rates have been derived from the experiment.
Show PACS
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

On the temperature sensitivity of semiconductor lasers

J. O’Gorman, A. F. J. Levi, S. Schmitt‐Rink, T. Tanbun‐Ek, D. L. Coblentz, and R. A. Logan

Appl. Phys. Lett. 60, 157 (1992); http://dx.doi.org/10.1063/1.107001 (3 pages) | Cited 14 times

Full Text: | Download PDF

Show Abstract
The temperature dependence of below‐threshold emission from multiple quantum well semiconductor lasers is well characterized by a power law, in excellent agreement with Landau–Ginzburg theory of second‐order phase transitions. We thereby show that it is the temperature dependence of net gain and not that of nonradiative recombination which primarily determines temperature sensitivity of threshold in long‐wavelength injection lasers.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Thermoplasticity and parallel‐plate poling of electro‐optic polyimide host thin films

J. F. Valley, J. W. Wu, S. Ermer, M. Stiller, E. S. Binkley, J. T. Kenney, G. F. Lipscomb, and R. Lytel

Appl. Phys. Lett. 60, 160 (1992); http://dx.doi.org/10.1063/1.107473 (3 pages) | Cited 31 times

Full Text: | Download PDF

Show Abstract
We demonstrate the first polyimide guest/host system which exhibits stable electro‐optic response after parallel‐plate poling. Such systems are based on a class of polyimides which, once cured, possess a clear glass transition in their dielectric relaxation spectra, characteristic of thermoplasticity. After doping with compatible nonlinear optical molecules the polyimide host system can first be thermally imidized (cured) and then poled with an electric field. High glass transition temperatures are achieved leading to excellent thermal stability of the poled electro‐optic response.
Show PACS
78.20.Jq Electro-optical effects
78.66.Qn Polymers; organic compounds
42.70.Jk Polymers and organics

Gain measurements of Mn5+(3d2) doped Sr5(PO4)3Cl and Ca2PO4Cl

J. A. Capobianco, G. Cormier, R. Moncorgé, H. Manaa, and M. Bettinelli

Appl. Phys. Lett. 60, 163 (1992); http://dx.doi.org/10.1063/1.107002 (3 pages) | Cited 16 times

Full Text: | Download PDF

Show Abstract
We report the room‐temperature near‐infrared emission (1.0–1.4 μm), the fluorescence lifetimes, and the gain measurements of the tetraoxo manganese specie MnO3−4(Mn5+,3d2) in single crystals of Sr5(PO4)3Cl and Ca2PO4Cl. The relatively long fluorescence lifetimes, 100 and 425 μs for MnO3−4 doped Ca2PO4Cl and MnO3−4 doped Sr5(PO4)3Cl, respectively, are consistent with the emission originating from 1E level. The stimulated emission cross section of Ca2PO4Cl:Mn5+ at around 1.15 μm is found to be 3.2×10−20 cm−2.
Show PACS
42.55.Rz Doped-insulator lasers and other solid state lasers

Intuitive model to include the effect of free‐carrier absorption in calculating the two‐photon absorption coefficient

Frances R. Laughton, John H. Marsh, and John S. Roberts

Appl. Phys. Lett. 60, 166 (1992); http://dx.doi.org/10.1063/1.106980 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
We report a simple model to include the effect of free‐carrier absorption (FCA) in calculating the two‐photon absorption (TPA) coefficient, β, and demonstrate its use in evaluating β from nonlinear transmission experiments. When only linear absorption and TPA are considered and the experimental analysis is carried out in the usual way, β is calculated to be 2.0 and 2.7×10−10 m W−1 for TM and TE polarizations, respectively. Including the effect of FCA in the waveguide, the model predicts β to be 1.5 and 2.0×10−10 m W−1 for TM and TE polarizations, respectively.
Show PACS
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Measurements of particle size kinetics from nanometer to micrometer scale in a low‐pressure argon‐silane radio‐frequency discharge

L. Boufendi, A. Plain, J. Ph. Blondeau, A. Bouchoule, C. Laure, and M. Toogood

Appl. Phys. Lett. 60, 169 (1992); http://dx.doi.org/10.1063/1.106981 (3 pages) | Cited 112 times

Full Text: | Download PDF

Show Abstract
The time evolution of the size of particles produced in a silane‐argon low‐pressure radio‐frequency discharge has been determined in the nanometer to the micrometer range using transmission electron microscopy. Highly ‘‘monodisperse’’ distributions are observed and their temporal evolution is followed. These studies are combined with laser light scattering measurements to obtain particle densities, which are of the order of 107 cm−3. For short plasma durations (Δt<5 s), a fast (10 nm/s) linear increase in diameter is measured.
Show PACS
52.70.-m Plasma diagnostic techniques and instrumentation
52.75.Fk Magnetohydrodynamic generators and thermionic convertors; plasma diodes
52.80.-s Electric discharges

Transmission electron microscopy study of chemical‐vapor‐deposited diamond by a side‐view method

Yasuyuki Goto, Kazuaki Kurihara, Yumiko Sawamoto, and Toshisuke Kitakohji

Appl. Phys. Lett. 60, 172 (1992); http://dx.doi.org/10.1063/1.106982 (2 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
The initial growth of synthetic diamond by dc plasma‐jet chemical vapor deposition was studied with a transmission electron microscope by a side‐view method. Both diamond particles and β‐SiC particles were observed on the Si substrate. Si atoms in the substrate were etched clearly by the plasma jet except beneath diamond particles.
Show PACS
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Room‐temperature epitaxial growth of Ag(110)/GaAs(100) films

T. C. Nason, L. You, and T.‐M. Lu

Appl. Phys. Lett. 60, 174 (1992); http://dx.doi.org/10.1063/1.106983 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
Thin Ag films were deposited in a partially ionized beam vacuum system on undoped GaAs(100) substrates at room temperature. The x‐ray pole‐figure technique was used to characterize the crystal orientation. The epitaxial relationship observed was Ag(110)/GaAs(100) with Ag[100]//GaAs[110]. The epitaxy was achieved at a vacuum in the 10−6 Torr range with no in situ cleaning. The substrates were prepared only by a HF dip immediately prior to deposition.
Show PACS
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Contrast formation mechanism for the surface defects imaged by x‐ray topography under the condition of simultaneous specular and Bragg reflections

T. Kitano, S Kimura, and T. Ishikawa

Appl. Phys. Lett. 60, 177 (1992); http://dx.doi.org/10.1063/1.107438 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
X‐ray topography using extremely asymmetric diffraction under the specular reflection condition is effective for imaging a short‐range strain field near the surface. This experimental condition is easily realized by utilizing the tunability of synchrotron radiation. The surface defect images are clearly observed as a result of the reduction of background due to dynamical diffraction from the highly perfect bulk crystal.
Show PACS
61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.
68.35.B- Structure of clean surfaces (and surface reconstruction)

Thermoelectric cooling at very low temperatures

Aharon Kapitulnik

Appl. Phys. Lett. 60, 180 (1992); http://dx.doi.org/10.1063/1.106956 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
We present a theoretical analysis of a thermoelectric cooler that can operate below liquid‐He temperatures. Using a metal close to its metal‐insulator transition, we show that the figure of merit for such a thermoelectric cooler improves with decreasing temperature. With a proper choice of materials, such a cooler can be used in arbitrarily low temperatures and possibly replace devices such as a dilution refrigerator.  
Show PACS
07.20.Mc Cryogenics; refrigerators, low-temperature detectors, and other low-temperature equipment
72.20.Pa Thermoelectric and thermomagnetic effects
71.30.+h Metal-insulator transitions and other electronic transitions

Photoemission from thick overlying epitaxial layers of CaF2 on Si(111)

B. Quiniou, W. Schwarz, Z. Wu, R. M. Osgood, Q. Yang, and Julia M. Phillips

Appl. Phys. Lett. 60, 183 (1992); http://dx.doi.org/10.1063/1.106957 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
A tunable pulsed UV laser has been used to investigate photoemission from epitaxial films on Si(111). We find that internal photoemission from the Si surface provides significant electron emission through overlayers as thick as 8000 Å. The attenuation length in the epitaxial CaF2 films is found to be 2600 Å.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
79.60.-i Photoemission and photoelectron spectra

Generation and anneal of a new kind of interface state in stressed and high‐temperature annealed metal‐oxide‐semiconductor devices

M. Berger, E. Avni, and J. Shappir

Appl. Phys. Lett. 60, 186 (1992); http://dx.doi.org/10.1063/1.106958 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
Polycrystalline silicon (poly) gate metal‐oxide‐semiconductor (MOS) transistors were electrically stressed by constant‐current tunneling. After the stress the devices were thermally annealed for variable times in the temperature range between 800 and 950 °C, and a second tunneling stress was performed. Capacitance‐voltage (C‐V) curve broadening and a charge pumping (CP) technique were used to detect interface state generation. It was found that the stress generated interface states are totally annealed by the thermal treatment. On the other hand, generation rates and saturation values, due to the second stress after annealing, exceed those of the fresh devices. Analysis of the generation process indicates that two types of interface states are generated: one, similar in its generation rate and saturation value to that of a fresh device, and another one, which is characterized by a higher generation rate and saturation value, is attributed to a new type of latent site. The density of this new type of latent interface states site decays exponentially with the annealing time. The annealing rate follows a temperature‐dependent Arrhenius function. The anneal of this new type of interface state is characterized by an activation energy of 3.47 eV.
Show PACS
85.30.Tv Field effect devices
73.20.At Surface states, band structure, electron density of states
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

All‐optical modulation in crystalline organic semiconductor waveguides

D. Y. Zang and S. R. Forrest

Appl. Phys. Lett. 60, 189 (1992); http://dx.doi.org/10.1063/1.106959 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
We demonstrate all‐optical modulation in crystalline organic semiconductor waveguides grown by the ultrahigh vacuum process of organic molecular‐beam deposition. Two light beams with wavelengths of 1.06 and 0.514 μm were used as the guided and the pump light sources, respectively. A refractive index change of 5.4×10−5 at 1.06 μm was observed at a pump intensity of 1.0 W/cm2. This large nonlinear effect is attributed to free electron‐hole pairs produced by the dissociation of excitons generated by the short wavelength beam. A carrier lifetime of (17±1) μs which determines the modulator switching time is in good agreement with theoretical predictions. To our knowledge, this is the first observation of free‐carrier‐induced index modulation in crystalline organic waveguides.
Show PACS
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.-e Optical elements, devices, and systems

Giant nonlinear phase shift at exciton resonance in ZnSe

T. Saiki, K. Takeuchi, M. Kuwata‐Gonokami, T. Mitsuyu, and K. Ohkawa

Appl. Phys. Lett. 60, 192 (1992); http://dx.doi.org/10.1063/1.106960 (3 pages) | Cited 12 times

Full Text: | Download PDF

Show Abstract
We study the optical nonlinearity just at the exciton resonance in ZnSe at 8 K. A sample with thickness of 2.4 μm is grown by molecular‐beam epitaxy on a GaAs substrate. Using reflection‐type polarization spectroscopy with weak picosecond optical pulses, we observe nonlinear phase shift, being free from incoherent processes caused by the accumulation of excitons. A huge nonlinear phase shift, 0.15 deg cm2/kW, whose effective χ(3) is over 10−2 esu, with a response time shorter than 20 ps is obtained.
Show PACS
78.20.-e Optical properties of bulk materials and thin films
71.35.-y Excitons and related phenomena
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Admittance spectroscopy measurements of band offsets in Si/Si1−xGex/Si heterostructures

K. Nauka, T. I. Kamins, J. E. Turner, C. A. King, J. L. Hoyt, and J. F. Gibbons

Appl. Phys. Lett. 60, 195 (1992); http://dx.doi.org/10.1063/1.106961 (3 pages) | Cited 35 times

Full Text: | Download PDF

Show Abstract
Admittance spectroscopy has been used to measure conduction‐ and valence‐band discontinuities in Si/Si1−xGex heterojunctions (0<x<0.45). Most of the band‐gap discontinuity was in the valence band. The measured valence‐band offset increased with increasing Ge concentration in the strained Si1−xGex films, and it decreased when the Si1−xGex layers started to relax. These results indicate that admittance spectroscopy can be used to monitor the electronic properties of transistorlike Si/Si1−xGex/Si heterostructures.
Show PACS
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Low pressure chemical vapor deposition of oxide from SiH4/O2: Chemistry and effects on electrical properties

M. Liehr and S. A. Cohen

Appl. Phys. Lett. 60, 198 (1992); http://dx.doi.org/10.1063/1.106962 (3 pages) | Cited 18 times

Full Text: | Download PDF

Show Abstract
The low pressure chemical vapor deposition (CVD) process of SiO2 from SiH4 and O2 has been analyzed. For deposition at pressures ranging from 10−3 to 3 Torr, with no carrier gas, the process is dominated by fast gas‐phase reactions. In situ analytical techniques, such as mass spectrometry and high‐resolution electron energy loss spectroscopy, indicate that hydroxyl groups are reaction products and are imbedded into the growing oxide at temperatures from 300 to 600 °C. Presence of these groups is detrimental to the electrical properties of metal‐oxide‐semiconductor (MOS) structures, e.g., by causing low‐field breakdown and by increasing the interface state density. Low‐pressure (SiH4/O2) oxides are thus principally not well suited for gate‐oxide applications because of their underlying chemistry.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Ng Insulators
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Epitaxial growth of alkaline earth fluoride films on HF‐treated Si and (NH4)2Sx‐treated GaAs without in situ cleaning

L. S. Hung, G. H. Braunstein, and L. A. Bosworth

Appl. Phys. Lett. 60, 201 (1992); http://dx.doi.org/10.1063/1.106963 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
HF‐treated Si and (NH4)2Sx‐treated GaAs were used as substrates for epitaxial growth of CaF2 and BaF2 films without in situ cleaning. The fluoride layers grown on the chemical‐treated substrates exhibit good crystalline quality and smooth surfaces. With fluorides on Si, minimum ion channeling yields are about 3%–5%, comparable with the best data reported in the literature using thermal etching or sputtering for substrate cleaning. CaF2 and BaF2 films grown on GaAs(100) exhibit the same (100)‐lattice orientation as the underlying GaAs substrate and no misoriented crystallites are observed. Pole figure measurements on BaF2 show that the crystallites are in close registry with the principal axes of the GaAs.
Show PACS
68.55.-a Thin film structure and morphology
81.65.-b Surface treatments
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Properties of a SiNx/Si/GaAs system having amorphous and crystalline Si interlayers on (100) GaAs with different surface superstructures

Shinji Fujieda, Emmanuel Benoit, and Toshio Baba

Appl. Phys. Lett. 60, 204 (1992); http://dx.doi.org/10.1063/1.106964 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
A variation of the electrical properties of SiNx/Si/GaAs system having amorphous and crystalline Si (a‐Si, c‐Si) interlayers on (100) GaAs with c(4×4), 2×4, and 4×6 surfaces is demonstrated. We interpret the findings in terms of Ga and As incorporation into the Si interlayers, which should form acceptor and donor levels, respectively. The dissimilar effects of a‐Si and c‐Si interlayers are attributed to Ga segregation during the growth of c‐Si, which is suggested by the secondary‐ion mass spectroscopy of c‐Si films grown on GaAs.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Bias‐stress‐induced creation and removal of dangling‐bond states in amorphous silicon thin‐film transistors

M. J. Powell, S. C. Deane, and W. I. Milne

Appl. Phys. Lett. 60, 207 (1992); http://dx.doi.org/10.1063/1.106965 (3 pages) | Cited 38 times

Full Text: | Download PDF

Show Abstract
We report on the threshold voltage shift in amorphous silicon thin‐film transistors, subjected to a gate bias for a prolonged period of time (bias stress). For transistors made with a silicon nitride gate insulator, the threshold voltage shift for low positive bias is due to dangling‐bond‐state creation in the amorphous silicon layer. For low negative bias, the threshold voltage shift is due to the bias‐stress‐induced removal of dangling‐bond states. These results are contrasted with previously published results for oxide transistors, but both results are consistent with a defect pool model for the dangling‐bond states. The difference for oxide and nitride transistors is due to a different zero‐bias Fermi energy position at the interface. For nitride transistors at much larger applied bias, the dominant mechanism changes and the threshold voltage shift is dominated by charge trapping in the gate dielectric. This is found for both large negative and large positive bias.
Show PACS
85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
71.55.Ht Other nonmetals

Tailoring of electron and hole energies in strained GaAsP/AlGaAs quantum wells using fluorine‐impurity‐induced layer disordering

Utpal Das, Steve Davis, Ramu V. Ramaswamy, and Fred A. Stevie

Appl. Phys. Lett. 60, 210 (1992); http://dx.doi.org/10.1063/1.106966 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
Restoration or removal of the light‐ and heavy‐hole degeneracy of the exciton transitions for light polarized parallel to the layers in strained GaAs0.91P0.09/Al0.3Ga0.7As single quantum wells has been demonstrated by fluorine‐impurity‐induced layer disordering. Disordering due to As and P interdiffusion has also been observed at the quantum‐well interfaces. For only a 15‐min anneal at 750 °C, accumulation of P and a depletion of As at a distance of 0.05–0.1 μm beneath the surface is found to be closely associated with the redistribution of the implanted F in this region.  
Show PACS
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
66.30.-h Diffusion in solids

Two‐dimensional exciton dynamics in InGaAs/GaAs quantum wells

Yutaka Takahashi, Soichi Owa, Satoru S. Kano, Koji Muraki, Susumi Fukatsu, Yasuhiro Shiraki, and Ryoichi Ito

Appl. Phys. Lett. 60, 213 (1992); http://dx.doi.org/10.1063/1.106967 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
We have investigated the exciton dynamics in InGaAs/GaAs single quantum wells using time‐resolved photoluminescence spectroscopy. The temperature dependence of the decay time shows that the scattering rate of two‐dimensional excitons is reduced in the narrower wells compared with that of AlGaAs/GaAs quantum wells. The results suggest the dominant contribution of the alloy disorder scattering to the exciton scattering processes over the interface roughness scattering.
Show PACS
78.55.Cr III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
71.35.-y Excitons and related phenomena

Polarity dependence of hot‐electron‐induced trap creation in metal‐oxide‐semiconductor capacitors

D. A. Buchanan

Appl. Phys. Lett. 60, 216 (1992); http://dx.doi.org/10.1063/1.106968 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
Using thin metal gate electrodes, we have injected electrons into silicon dioxide films from the gate electrode and from the silicon substrate using internal photoemission. We have measured the hot‐electron‐induced electron trap density and centroid as a function of the average applied field and bias polarity for samples that have been in storage for a number of years and for samples recently fabricated. We found a greater density of traps generated for injection from the gate than from the silicon substrate. For the ‘‘aged’’ samples, the charge centroid of the electron traps is found close to the aluminum/silicon dioxide interface for low electric fields implying a large density of background traps close to this interface. For the ‘‘dry’’ samples the low‐field centroid is found close to the center of the silicon dioxide film. As the field exceeds the electron heating threshold (≂1.5 MV/cm), the charge centroid for all samples is found to move towards the cathode/silicon dioxide interface.
Show PACS
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Sk Insulators
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close