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Applied Physics Letters / Volume 60 / Issue 2

Appl. Phys. Lett. 60, 213 (1992); http://dx.doi.org/10.1063/1.106967 (3 pages)

Two‐dimensional exciton dynamics in InGaAs/GaAs quantum wells

Yutaka Takahashi1, Soichi Owa1, Satoru S. Kano1, Koji Muraki2, Susumi Fukatsu2, Yasuhiro Shiraki2, and Ryoichi Ito2

1IBM Research, Tokyo Research Laboratory, 5‐19 Sanban‐cho, Chiyoda‐ku, Tokyo 102, Japan
2Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153, Japan

(Received 3 September 1991; accepted 28 October 1991)

We have investigated the exciton dynamics in InGaAs/GaAs single quantum wells using time‐resolved photoluminescence spectroscopy. The temperature dependence of the decay time shows that the scattering rate of two‐dimensional excitons is reduced in the narrower wells compared with that of AlGaAs/GaAs quantum wells. The results suggest the dominant contribution of the alloy disorder scattering to the exciton scattering processes over the interface roughness scattering.

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KEYWORDS and PACS

Keywords

INDIUM ARSENIDES, GALLIUM ARSENIDES, QUASI−BINARY COMPOUNDS, QUANTUM WELL STRUCTURES, EXCITONS, PHOTOLUMINESCENCE, RELAXATION TIME, SCATTERING, ULTRALOW TEMPERATURE, THICKNESS, LINE BROADENING

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.106967

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    J. P. Reithmaier, R. Höger, and H. Riechert, Phys. Rev. B 43, 4933 (1991),, J. Menéndez, A. Pinczuk, D. J. Werder, S. K. Sputz, R. C. Miller, D. L. Sivco, and A. Y. Cho, Phys. Rev. B 36, 8165 (1987).

    J. Feldman, G. Peter, E. O. Göbel, P. Dawson, K. Moore, C. Foxon, and R. J. Elliott, Phys. Rev. Lett. 59, 2337 (1987).

    C. C. Phillips, R. Eccleston, and S. R. Andrews, Phys. Rev. B 40, 9760 (1989).

    H. Hilmer, A. Forchel, D. Hansmann, M. Morohashi, E. Lopez, H. P. Meier, and K. Ploog, Phys. Rev. B 39, 10901 (1989).


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