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18 May 1992

Volume 60, Issue 20, pp. 2451-2563

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Spectral measurement of timing jitter in gain‐switched semiconductor lasers

David A. Leep and David A. Holm

Appl. Phys. Lett. 60, 2451 (1992); http://dx.doi.org/10.1063/1.106930 (3 pages) | Cited 22 times

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We calculate the power spectrum of a periodically gain‐switched semiconductor laser having intrinsic timing jitter and pulse‐energy fluctuations that are uncorrelated from pulse to pulse. The results, in accord with measurements and numerical simulations, show that rms values of uncorrelated jitter can be determined with subpicosecond sensitivity from measured photocurrent spectra.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Mi Dynamical laser instabilities; noisy laser behavior

Phase noise of four‐wave mixing in semiconductor lasers

Rongqing Hui and Antonio Mecozzi

Appl. Phys. Lett. 60, 2454 (1992); http://dx.doi.org/10.1063/1.106931 (3 pages) | Cited 12 times

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A simple theoretical analysis shows that the linewidth of the conjugate wave produced in four‐wave mixing in semiconductor lasers is equal to the linewidth of the probe plus four times the linewidth of the pump. Experimental results in good agreement with the theory are presented. This result implies an enormous enhancement in the phase noise of the conjugate wave and sets a limitation on some practical applications of four‐wave mixing.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.55.Px Semiconductor lasers; laser diodes

Enhancement of change in the refractive index in an asymmetric quantum well

Nobuhiko Susa and Tatsushi Nakahara

Appl. Phys. Lett. 60, 2457 (1992); http://dx.doi.org/10.1063/1.106932 (3 pages) | Cited 4 times

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A three‐step quantum well is proposed that increases the electric‐field‐induced change in refractive index and reduces transmission loss. The oscillator strength of the n=1 heavy hole exciton can be reduced by more than an order of magnitude when an electric field is applied. This property results in a large change in refractive index and reduction in transmission loss. A low operating voltage is also possible.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.20.Jq Electro-optical effects
71.35.-y Excitons and related phenomena
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Distributed feedback operation of optically pumped ZnSe quantum‐well lasers in the blue‐green

T. Ishihara, G. Brunthaler, W. Walecki, M. Hagerott, A. V. Nurmikko, N. Samarth, H. Luo, and J. Furdyna

Appl. Phys. Lett. 60, 2460 (1992); http://dx.doi.org/10.1063/1.106933 (3 pages) | Cited 10 times

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Distributed feedback operation of optically pumped (Zn,Cd)Se/ZnSe quantum‐well lasers has been realized at room temperature. The periodic grating structure was fabricated by short wavelength holographic lithography and dry etching techniques. These results are relevant also in the context of the new blue‐green diode lasers, based on this same quantum‐well system.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Strained InGaAs/GaAs single quantum well lasers with saturable absorbers fabricated by quantum well intermixing

N. Yamada and J. S. Harris

Appl. Phys. Lett. 60, 2463 (1992); http://dx.doi.org/10.1063/1.106934 (3 pages) | Cited 15 times

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We report successful intermixing of strained InGaAs/GaAs quantum wells utilizing SiO2 with rapid thermal annealing and application of this technique to create a strained InGaAs single quantum well (SQW) laser with a monolithic saturable absorber section. The InGaAs SQW in the gain section was blue‐shifted relative to that in the absorber section to obtain strong absorption and its saturation. The output power of the device jumps abruptly to a level higher than 10 mW when the dc injection current reaches the threshold of 58 mA. Gain‐switched pulses have pulsewidth of 34.4 ps and high peak power of 330 mW.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Effect of free carriers on the linewidth enhancement factor of InGaAs/InP (strained‐layer) multiple quantum well lasers

L. F. Tiemeijer, P. J. A. Thijs, J. J. M. Binsma, and T. v. Dongen

Appl. Phys. Lett. 60, 2466 (1992); http://dx.doi.org/10.1063/1.106935 (3 pages) | Cited 10 times

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In this letter the linewidth enhancement factor measured from a tensile strained, a compressively strained, and a lattice matched InGaAs/InP multiple quantum well laser is analyzed taking free‐ carrier effects into account. We find that the free carriers in the wells of compressively strained and lattice matched structures degrade the linewidth enhancement factor by about 40% due to the plasma effect. In tensile strained TM polarized lasers however, carrier movement parallel to the E vector is inhibited due to the quantum confinement, allowing a linewidth enhancement factor as low as 1.6 at the peak wavelength. Heterobarrier carrier leakage must be prevented using sufficiently large band‐gap barrier and separate confinement layers, otherwise the free carriers in these layers result in an additional degradation of the linewidth enhancement factor.
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42.55.Px Semiconductor lasers; laser diodes
73.50.Mx High-frequency effects; plasma effects
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Single‐mode selection using coherent imaging within a slab waveguide CO2 laser

K. M. Abramski, H. J. Baker, A. D. Colley, and D. R. Hall

Appl. Phys. Lett. 60, 2469 (1992); http://dx.doi.org/10.1063/1.106936 (3 pages) | Cited 16 times

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A technique for selecting a single high‐order lateral mode of a rf excited slab waveguide laser is described. An in‐cavity grid which matches the periodicity of the desired mode, together with slab waveguide dimensions which create coherent imaging by the Talbot effect, have produced a stable output power of 155 W in a high spectral purity, single‐resonator mode.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Tunable twin‐guide lasers with flat frequency modulation response by quantum confined Stark effect

T. Wolf, K. Drögemüller, B. Borchert, H. Westermeier, E. Veuhoff, and H. Baumeister

Appl. Phys. Lett. 60, 2472 (1992); http://dx.doi.org/10.1063/1.106937 (3 pages) | Cited 5 times

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For the first time results on the frequency modulation response of tunable twin‐guide laser diodes utilizing the quantum confined Stark effect in a multiquantum well modulation layer are presented. The structures were grown by metalorganic vapor phase epitaxy and were processed into ridge‐waveguide lasers emitting at 1555 nm. Preliminary devices exhibit single‐mode output power levels of more than 10 mW and minimum linewidths around 4 MHz. The frequency modulation response is flat up to 2 GHz with a modulation efficiency of 7 GHz/V.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.79.Hp Optical processors, correlators, and modulators
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Plasma lens fine focusing of heavy-ion beams

E. Boggasch, A. Tauschwitz, H. Wahl, K.-G. Dietrich, D. H. H. Hoffmann, W. Laux, M. Stetter, and R. Tkotz

Appl. Phys. Lett. 60, 2475 (1992); http://dx.doi.org/10.1063/1.107443 (3 pages) | Cited 16 times

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The fine-focusing capability of a current-carrying, "active" plasma lens has been demonstracted for the first time. A cylindrically symmetric argon discharge plasma pulsed with an oscillating current of over 20 kA in amplitude served as a current conducting medium. With this plasma lens has been demonstrated for the first time. A cylindrically symmetric argon discharge plasma pulsed with an oscillating current of over 20 kA in amplitude served as a current conducting medium. With this plasma lens the diameter of an incident 2.2-GeV gold ion beam from the linear accelerator UNILAC at GSI-Darmstadt was focused from initially 10 to about 0.25 mm, at a focal length of only 140 mm. The gradient of the azimuthal magnetic field exceeded 120 T/m. The striking features of this first-order and strong-focusing plasma lens favor its use as a precise high-gradient focusing device for high-energy charged particles.
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29.27.Eg Beam handling; beam transport
41.85.Lc Particle beam focusing and bending magnets, wiggler magnets, and quadrupoles
52.75.-d Plasma devices

Excimer laser ablated strontium titanate thin films for dynamic random access memory applications

D. Roy, C. J. Peng, and S. B. Krupanidhi

Appl. Phys. Lett. 60, 2478 (1992); http://dx.doi.org/10.1063/1.106938 (3 pages) | Cited 37 times

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Thin films of SrTiO3 were deposited on platinum coated silicon and bare silicon by excimer laser (248 nm) ablation at 400 and 500 °C or ex situ crystallized. Films deposited at 500 °C showed good crystallinity and were characterized for dielectric constant, dielectric loss, leakage current and C‐V characteristics. The films showed a dielectric constant of 240, a dissipation factor of 0.02, a leakage current of 2×10−9 A/cm2, and a charge storage density of 42 fC/μm2 at a bias of 5 V. The C‐V behavior of both metal‐insulator‐metal (MIM) and metal‐insulator‐ semiconductor (MIS) structures indicated bulk dielectric permittivity in the accumulation region and also good Si/SrTiO3 interfaces.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
77.55.-g Dielectric thin films
84.32.Tt Capacitors

Atomic scale saw by dislocation slipping: A new method to generate one‐dimensional structure

J. P. Peyrade, F. Voillot, M. Goiran, H. Atmani, A. Rocher, and E. Bedel

Appl. Phys. Lett. 60, 2481 (1992); http://dx.doi.org/10.1063/1.106939 (3 pages) | Cited 18 times

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A new method to generate one‐dimensional (1D) semiconductor structures or controllable steps on a surface is proposed. This method, which is not material specific, is based on intrinsic dislocation slip properties and heterogeneity of straining. Dislocations can be used as an atomic scale saw to cut two‐dimensional structures (2D) in order to obtain 1D wires. Atomic force microscope observations of GaAs surfaces and transmission electronic microscopy cross sections of GaAs/GaAlAs single quantum wells are presented to demonstrate the feasibility of the method. Although being based on dislocation slipping this method is shown to preserve the optical and crystalline properties of the starting 2D structure as confirmed by photoluminescence spectra.
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68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)

Combined shear force and near‐field scanning optical microscopy

E. Betzig, P. L. Finn, and J. S. Weiner

Appl. Phys. Lett. 60, 2484 (1992); http://dx.doi.org/10.1063/1.106940 (3 pages) | Cited 473 times

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A distance regulation method has been developed to enhance the reliability, versatility, and ease of use of near‐field scanning optical microscopy (NSOM). The method relies on the detection of shear forces between the end of a near‐field probe and the sample of interest. The system can be used solely for distance regulation in NSOM, for simultaneous shear force and near‐field imaging, or for shear force microscopy alone. In the latter case, uncoated optical fiber probes are found to yield images with consistently high resolution.
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07.60.Pb Conventional optical microscopes
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Processing of a uniaxial ferroelectric Pb5Ge3O11 thin film at 450 °C with c‐axis orientation

J. J. Lee and S. K. Dey

Appl. Phys. Lett. 60, 2487 (1992); http://dx.doi.org/10.1063/1.106941 (2 pages) | Cited 19 times

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Uniaxial Pb5Ge3O11 thin films were successfully fabricated by the sol‐gel processing route. Crack‐free and c‐axis oriented thin films (1600 Å) were observed on (111) Pt‐coated Si substrates when heat treated at 450 °C for 15 min. The thin films exhibited well saturated P‐E hysteresis loops with Pr=3.3 μC/cm2, Ps=3.7 μC/cm2, and Ec=135 kV/cm. Specifically, a 1600 Å film switched at 2.2 V. The possible applications such as nonvolatile ferroelectric memories and CCD IR image sensors without fatigue or retention problems, are discussed.
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77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Growth of YBa2Cu3O7−δ in pure ozone irradiated with ultraviolet light

T. Siegrist, D. A. Mixon, E. Coleman, and T. H. Tiefel

Appl. Phys. Lett. 60, 2489 (1992); http://dx.doi.org/10.1063/1.106942 (2 pages) | Cited 7 times

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Pure ozone has been successfully used as the source of reactive oxygen for in situ molecular beam epitaxy (MBE) growth of cuprate superconductor thin films. The thermally driven ozone‐oxidation process is relatively inefficient, however, requiring high ozone partial pressures and leading in some cases to film nonuniformities. We show that pure ozone‐oxidation during film deposition can be significantly enhanced by the additional use of ultraviolet (UV) irradiation. The UV energy produces excited‐state O and O2 species from ozone via a chain‐type mechanism, thereby increasing the ozone activity at least tenfold. In comparison to the film growth process relying solely on thermal ozone decomposition, it is possible to lower the ozone pressure by an order of magnitude while improving the quality of the superconducting films.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.50.-m Photochemistry

Synthesis of metastable epitaxial zinc‐blende‐structure AlN by solid‐state reaction

I. Petrov, E. Mojab, R. C. Powell, J. E. Greene, L. Hultman, and J.‐E. Sundgren

Appl. Phys. Lett. 60, 2491 (1992); http://dx.doi.org/10.1063/1.106943 (3 pages) | Cited 70 times

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Epitaxial metastable zinc‐blende‐structure β‐AlN was synthesized by the solid‐state reaction between single‐crystal Al(001) and TiN(001) layers grown on MgO(001) by ultrahigh vacuum magnetron sputter deposition. At an annealing temperature Ta=600 °C, the interaction proceeded according to the following overall reaction: 4Al+TiN→Al3Ti+AlN, in which β‐AlN was formed pseudomorphically between cubic TiN and tetragonal Al3Ti layers. The lattice constant of β‐AlN was found to be 0.438 nm, which corresponds to a 3.3% lattice mismatch with the underlying TiN layer.
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81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology

Supercritical shear in shocked pentaerythritol tetranitrate

J. J. Dick

Appl. Phys. Lett. 60, 2494 (1992); http://dx.doi.org/10.1063/1.106944 (2 pages) | Cited 5 times

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Supercritical shear occurs when the shear stress exceeds the strength of the perfect crystal. An estimate of the theoretical strength of the molecular crystal pentaerythritol tetranitrate is compared to experimental observations of the shock response of this explosive. It is concluded that supercritical shear may be occurring at shock stresses of several GPa in underdriven shocks where there is an elastic wave followed by a slower plastic wave. The induced simultaneous slip on sterically crowded cystallographic planes may be the mechanism for shock initiation of detonation in this explosive, at least in the low stress regime.
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62.20.F- Deformation and plasticity
62.50.-p High-pressure effects in solids and liquids

Abnormal redistribution of Zn in InP/InGaAs heterojunction bipolar transistor structures

K. Kurishima, T. Kobayashi, and U. Gösele

Appl. Phys. Lett. 60, 2496 (1992); http://dx.doi.org/10.1063/1.106945 (3 pages) | Cited 27 times

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High n+ doping (≳1019 cm−3 of Si) in the subcollector of InP/InGaAs heterojunction bipolar transistor structures is observed to induce an anomalously high Zn diffusivity and an associated broadening of the base layers. It is proposed that due to Fermi level surface pinning and a long time constant for the recovery of point defect equilibrium the subcollector acts as a continuously operating source of group III interstitials which in turn diffuse into the subsequently grown base region and enhance Zn diffusion via the kick‐out mechanism. In this sense, highly n+ doped grown‐in subcollector layers may be considered as having the effect of a ‘‘time bomb’’ in terms of generating undesirable excess point defects during subsequent further crystal growth and device processing.  
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85.30.Pq Bipolar transistors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
66.30.J- Diffusion of impurities

X‐ray diffraction study of annealed ZnSe/GaAs superlattices

S. Zhang and N. Kobayashi

Appl. Phys. Lett. 60, 2499 (1992); http://dx.doi.org/10.1063/1.106946 (3 pages)

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We investigate the effect of annealing on the structural properties of ZnSe/GaAs superlattices by the x‐ray double‐crystal rocking‐curve technique. A 6‐period ZnSe/GaAs superlattice with 61‐nm thick ZnSe layers and 6‐nm thick GaAs layers is grown by a combination of migration‐enhanced epitaxy and solid‐phase epitaxy. X‐ray diffraction is measured for the ZnSe/GaAs superlattice samples annealed at different temperatures for several annealing periods in flowing H2 gas. From the change in the (004) and (115) rocking‐curve profiles with increasing annealing temperature and annealing period, it was found that about 25% of the parallel strain in the ZnSe layers is relieved by misfit dislocations after annealing at 520 °C for 20 min. The interface properties of the annealed ZnSe/GaAs superlattices are also examined by computer simulation of kinematical diffraction.
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68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Diamond growth by a new method based upon sequential exposure to atomic carbon and hydrogen

Michael A. Kelly, Darin S. Olson, Sanjiv Kapoor, and Stig B. Hagstrom

Appl. Phys. Lett. 60, 2502 (1992); http://dx.doi.org/10.1063/1.106947 (3 pages) | Cited 15 times

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We report growing high‐quality diamond films by alternately exposing a substrate to a source of sputtered carbon atoms and one emitting atomic hydrogen in a new type of chemical vapor deposition reactor. The reactor is described, and two examples of films grown in it are shown. The implications of being able to grow diamond by a sequential process, and from the simple constituents of atomic carbon and hydrogen, are discussed.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Growth of GaN(0001)1×1 on Al2O3(0001) by gas‐source molecular beam epitaxy

R. C. Powell, N.‐E. Lee, and J. E. Greene

Appl. Phys. Lett. 60, 2505 (1992); http://dx.doi.org/10.1063/1.106948 (3 pages) | Cited 36 times

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Gas‐source molecular beam epitaxy (GSMBE), utilizing Ga and NH3, has been used to grow single‐crystal GaN(0001)1×1 on Al2O3(0001) substrates at temperatures Ts between 700 and 850 °C. In situ reflection high‐energy electron diffraction studies show a transition from three‐dimensional to two‐dimensional growth at Ts≳770 °C. For ≂1‐μm‐thick GaN layers, the best room‐temperature carrier mobilities, 100–110 cm2 V−1 s−1, with carrier concentrations of 1–4×1018 cm−3, were obtained at Ts≥780 °C. These are the highest reported mobilities for MBE GaN. Band‐to‐band photoluminescence was observed in these films at room temperature. Cross‐sectional transmission electron microscopy showed that the primary defects in the films were threading dislocations, with Burgers vectors a0/3〈2110〉, and stacking faults.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.61.Ey III-V semiconductors

Edge effects in a gated submicron resonant tunneling diode

P. H. Beton, M. W. Dellow, P. C. Main, T. J. Foster, L. Eaves, A. F. Jezierski, M. Henini, S. P. Beaumont, and C. D. W. Wilkinson

Appl. Phys. Lett. 60, 2508 (1992); http://dx.doi.org/10.1063/1.106949 (3 pages) | Cited 21 times

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We have investigated the current‐voltage [I(V)] characteristics of a gated GaAs/(AlGa)As resonant tunneling diode. As the negative gate voltage is progressively increased I(V) becomes asymmetric. In particular the peak‐to‐valley ratio in forward bias is decreased from ≂20 to ≂1, but in reverse bias remains constant ≂20. This arises from a lateral variation of the voltage drop across the emitter tunnel barrier, which in forward bias leads to a smearing of the resonance. We discuss the relationship between our experiment and the low peak‐to‐valley ratios of two‐terminal submicron resonant tunneling diodes observed by other groups.
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73.40.Gk Tunneling
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Investigations of the Si3N4/Si/n‐GaAs insulator‐semiconductor interface with low interface trap density

D. S. L. Mui, D. Biswas, J. Reed, A. L. Demirel, S. Strite, and H. Morkoç

Appl. Phys. Lett. 60, 2511 (1992); http://dx.doi.org/10.1063/1.106950 (3 pages) | Cited 31 times

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We have investigated the interface properties of rapid thermal annealed in situ deposited gate quality Si3N4/Si/n‐GaAs metal‐insulator‐semiconductor (MIS) capacitors. Conductance measurements show a minimum interface trap density of 1011 eV−1 cm−2 located in the lower‐half of the GaAs band gap. The quasi‐static capacitance‐voltage (QSCV) curve shows the largest dip toward the high‐frequency C‐V curve ever observed in compound semiconductor‐based MIS structures. In spite of the lowest interface trap density for GaAs‐based MIS structures ever reported, conductance data reveal a rapid increase in the density of interface traps in the upper‐half of the band gap. Both the ac loss and the capacitive frequency dispersion of the interface traps agree with the single time constant model. The anomalous frequency dispersion of the measured capacitance can be satisfactory explained by the trap location in the band gap and rapid increase in the trap density in the upper‐half of the band gap.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Visible electroluminescence from porous silicon np heterojunction diodes

Fereydoon Namavar, H. Paul Maruska, and Nader M. Kalkhoran

Appl. Phys. Lett. 60, 2514 (1992); http://dx.doi.org/10.1063/1.106951 (3 pages) | Cited 116 times

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We report the preparation of silicon‐based visible light‐emitting diodes, configured as heterojunctions between porous silicon (formed by electrochemical etching of p‐type silicon wafers), and n‐type indium tin oxide (ITO). The transparent ITO film allows light emission through the top surface of the device, under a forward electrical bias of several volts across the junction. Photogenerated currents are observed under reverse biases. A tentative model for this electroluminescence is presented, based on injection of minority carriers through a narrow interphase region into the porous silicon structure, where radiative recombination occurs.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Evidence for the neutral charge state model of the DX center from low temperature Hall mobility measurements

G. A. Leith, S. Zukotynski, and A. J. SpringThorpe

Appl. Phys. Lett. 60, 2517 (1992); http://dx.doi.org/10.1063/1.106952 (3 pages) | Cited 5 times

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The dependence of the Hall mobility on DX center occupancy in a sample of Si‐doped Al0.3Ga0.7As is measured at 40 K. The occupancy of the DX centers is adjusted by means of the persistent photoconductivity effect. The theoretical mobility is calculated for both the neutral and negative charge state models of the DX center. The calculation includes the effect of dynamic screening, and uses values of the impurity concentrations measured by both Hall effect and secondary ion mass spectroscopy. The experimental results are found to be in much better agreement with the neutral charge state model.
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71.55.Eq III-V semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.My Galvanomagnetic and other magnetotransport effects
72.40.+w Photoconduction and photovoltaic effects

Single‐crystal Al films grown by sputtering on (111)Si substrates

H. Niwa and Masaharu Kato

Appl. Phys. Lett. 60, 2520 (1992); http://dx.doi.org/10.1063/1.106925 (2 pages) | Cited 6 times

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Single‐crystal growth of Al films deposited by the sputtering method on (111)Si substrates was investigated in detail by transmission electron microscopy studies. A single‐crystal epitaxial Al film 500 nm thick was obtained by conducting an appropriate heat treatment during and after the deposition.
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81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology
85.40.Ls Metallization, contacts, interconnects; device isolation
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