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Applied Physics Letters / Volume 60 / Issue 22

Appl. Phys. Lett. 60, 2717 (1992); http://dx.doi.org/10.1063/1.106854 (3 pages)

Observation of phase conjugation at 10.6 μm via intersubband third‐order nonlinearities in a GaAs/AlGaAs multi‐quantum‐well structure

Ilan Gravé, Mordechai Segev, and Amnon Yariv

California Institute of Technology, 128‐95, Pasadena, California 91125

(Received 24 February 1992; accepted 17 March 1992)

We describe the observation of phase conjugation at 10.6 μm in a GaAs/AlGaAs multi‐quantum‐well‐doped structure. The responsible nonlinear susceptibility χ(3) is due to a nearly resonant intersubband transition. The magnitude of χ(3) is 7×10−5 esu and the phase conjugate reflectivity is a few tenths of a percent.

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KEYWORDS and PACS

Keywords

GALLIUM ARSENIDES, ALUMINIUM ARSENIDES, TERNARY ALLOYS, QUANTUM WELL STRUCTURES, PHASE CONJUGATION, FAR INFRARED RADIATION, DOPED MATERIALS, NONLINEAR OPTICS

PACS

  • 42.65.Jx

    Beam trapping, self-focusing and defocusing; self-phase modulation

  • 42.70.Nq

    Other nonlinear optical materials; photorefractive and semiconductor materials

  • 78.66.Fd

    III-V semiconductors

  • 78.66.Hf

    II-VI semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.106854

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
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