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8 Jun 1992

Volume 60, Issue 23, pp. 2825-2938

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Indium tin oxide as transparent electrode material for ZnSe‐based blue quantum well light emitters

M. Hagerott, H. Jeon, A. V. Nurmikko, W. Xie, D. C. Grillo, M. Kobayashi, and R. L. Gunshor

Appl. Phys. Lett. 60, 2825 (1992); http://dx.doi.org/10.1063/1.106836 (3 pages) | Cited 25 times

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Sputter deposited indium tin oxide layers have been used as the top contact for blue LEDs and diode lasers in (Zn,Cd)Se/Zn(S,Se) quantum well heterostructures. The contact resistance to n‐Zn(S,Se) is comparable to that with indium or gold. The optically transparent contacts have been utilized, as an example, in the fabrication of a numeric display device and to show that LED emission is of excitonic origin in these type I quantum wells.
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85.60.Jb Light-emitting devices
73.40.Ns Metal-nonmetal contacts
85.60.Pg Display systems
81.15.Cd Deposition by sputtering

Domain inversion in LiNbO3 using direct electron‐beam writing

Alan C. G. Nutt, Venkatraman Gopalan, and Mool C. Gupta

Appl. Phys. Lett. 60, 2828 (1992); http://dx.doi.org/10.1063/1.106837 (3 pages) | Cited 34 times

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A 3‐μm periodic domain‐inverted pattern on the C− face of LiNbO3 has been written using direct electron‐beam writing for first‐order gratings used in second harmonic generation. The domain formation mechanism has been investigated, especially the shape of the domain and need for a conductor on the C+ face during the electron‐beam writing process.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
77.80.-e Ferroelectricity and antiferroelectricity
78.20.-e Optical properties of bulk materials and thin films

Comparison of electro‐optic lead‐lanthanum zirconate titanate films on crystalline and glass substrates

K. D. Preston and G. H. Haertling

Appl. Phys. Lett. 60, 2831 (1992); http://dx.doi.org/10.1063/1.106838 (3 pages) | Cited 42 times

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It has been demonstrated that electro‐optically active lead zirconate titanate (PZT) and lanthanum‐modified lead zirconate titanate (PLZT) films derived from a water‐soluble acetate precursor system can be produced on glass substrates at a processing temperature of 600 °C through the initial application of a lanthanum‐modified lead titanate (PLT) buffer layer. A comparison of the electro‐optic behavior is made between films deposited onto glass and single‐crystal sapphire substrates when processed under the same conditions. Memory effects were observed in PZT 0/65/35 films, while quadratic behavior was exhibited by the PLZT 9/65/35 films consistent with expected bulk behavior. However, the measured birefringent shift in the films on glass substrates was lower than that on sapphire.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
73.61.Ng Insulators
78.20.Jq Electro-optical effects

Vacuum ultraviolet fluorescence of (XeRb)+ produced in an electron‐beam‐pumped gas mixture

H. M. J. Bastiaens, F. T. J. L. Lankhorst, P. J. M. Peters, and W. J. Witteman

Appl. Phys. Lett. 60, 2834 (1992); http://dx.doi.org/10.1063/1.106839 (3 pages) | Cited 10 times

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With a pulsed electron beam a gas mixture of Ar, Xe, and Rb was excited producing (XeRb)+ ionic excimer molecules. To study the formation kinetics the (XeRb)+ fluorescence pulse was measured as a function of the gas composition and the pumping density. From the observed fluorescence signal decay a value of 6±1×10−30 cm6/s for the formation rate constant of (XeRb)+ from Xe+, Ar, and Rb was determined.
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34.80.-i Electron and positron scattering
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Optical heterodyning of the phase‐tuned femtosecond optical Kerr gate signal for the determination of complex third‐order susceptibilities

M. E. Orczyk, M. Samoc, J. Swiatkiewicz, N. Manickam, M. Tomoaia‐Cotisel, and P. N. Prasad

Appl. Phys. Lett. 60, 2837 (1992); http://dx.doi.org/10.1063/1.106840 (3 pages) | Cited 11 times

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We show that ultrafast optically stimulated birefringence and dichroism may be conveniently investigated by combining polarization sensitive optically heterodyned detection with phase tune‐up between the optical Kerr gate signal and the local oscillator. The real and the imaginary parts of complex third‐order optical nonlinearity can be effectively separated and their values and signs determined. 60 fs pulses at 620 nm were used in experiments carried on tetrahydrofuran solutions of canthaxanthin, a carotenoid important for photobiology. The values of both parts of the complex second hyperpolarizability γ as well as the sign of its real part determined by this method compare well with that obtained from the concentration dependence method employing the homodyne‐detection optical Kerr gate technique.
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42.65.An Optical susceptibility, hyperpolarizability

Highly sensitive Moire technique for direct and real‐time observation of electron microscopic phase objects

Q. Ru, J. Endo, and A. Tonomura

Appl. Phys. Lett. 60, 2840 (1992); http://dx.doi.org/10.1063/1.106841 (3 pages) | Cited 1 time

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A Moire modulation which is a sine function of the phase variation of a phase object to be investigated in an interference electron microscope is proposed. When the phase variation is larger than 2π, the conventional cosine‐functioned Moire‐fringe pattern is observed, and when the phase variation is very less than 2π, phase‐contrast Moire modulation which can never be achieved by the conventional Moire method is observed. The analogue and digital formations of this sine‐functioned Moire modulation in a photographic film and video camera, respectively, are presented. Real‐time observation is realized by the digital method.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers
42.40.-i Holography

2×2 GaAs asymmetric Mach–Zehnder interferometer switch

Hao Feng, Xihua Li, Zhuoya Yang, and Minghua Wang

Appl. Phys. Lett. 60, 2843 (1992); http://dx.doi.org/10.1063/1.106842 (3 pages) | Cited 4 times

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We report on the first 2×2 GaAs asymmetric Mach–Zehnder interferential switch. The mechanism of this device is analyzed. Instead of using Y branches, two asymmetric X junctions have been utilized in the switch. The device is characterized by a switching voltage of 12.5 V and a crosstalk ratio of less than −22 dB at an operating wavelength of 1.15 μm. It is shown that this device could be applied to switching arrays.
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42.79.-e Optical elements, devices, and systems
42.82.-m Integrated optics

Multiple quantum well light modulators for the 1.06 μm range on InP substrates: InxGa1−xAsyP1−y/InP, InAsyP1−y/InP, and coherently strained InAsyP1−y/InxGa1−xP

T. K. Woodward, T‐H. Chiu, and Theodore Sizer II

Appl. Phys. Lett. 60, 2846 (1992); http://dx.doi.org/10.1063/1.106843 (3 pages) | Cited 21 times

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See Also: Erratum

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We compare InP‐based materials systems for multiple quantum well modulator application in the 1.06 μm wavelength range. Quantum well/barrier systems studied are the lattice‐matched system InxGa1−xAsyP1−y/InP, the strained system InAsyP1−y/InP, and the strain‐balanced system InAsyP1−y/InxGa1−xP. 50 period samples were grown on InP substrates by chemical beam epitaxy. We find the ternary systems to be better than the quaternary in terms of exciton peak sharpness. The InAsyP1−y/InxGa1−xP system was best overall, with our results suggesting that it is coherently strained to the InP substrate.
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42.79.Hp Optical processors, correlators, and modulators
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Detwinning and domain removing of KIO3 crystal

X. Yin and M. K. Lü

Appl. Phys. Lett. 60, 2849 (1992); http://dx.doi.org/10.1063/1.107469 (2 pages) | Cited 4 times

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This letter reports the detwinning and domain removing of KIO3 crystal. As a result, single domain KIO3 crystal with a size of 30×15×15 mm3 has been obtained.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
61.72.Mm Grain and twin boundaries
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

Vertical microcavity surface‐emitting ring laser

J. Lin, J. K. Gamelin, G. T. Du, S. Wang, M. Hong, and J. P. Mannaerts

Appl. Phys. Lett. 60, 2851 (1992); http://dx.doi.org/10.1063/1.106844 (2 pages) | Cited 2 times

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We report the performance of a novel surface‐emitting laser of ring structure (RSEL). The far‐field emission pattern of the RSEL remains a near‐diffraction limited single lobe at 3 times the threshold current level. The structure may also be used to achieve beam width much less than that of the diffraction limit of Gaussian near‐field distribution.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Phase‐matched second‐harmonic generation in novel corona poled glass waveguides

A. Okada, K. Ishii, K. Mito, and K. Sasaki

Appl. Phys. Lett. 60, 2853 (1992); http://dx.doi.org/10.1063/1.106845 (3 pages) | Cited 40 times

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Second‐order optical nonlinearity χ(2) is induced in glass films by corona poling. The glass films are fabricated by radio‐frequency sputtering Corning7059 onto Pyrex glass substrates. The values of second‐order nonlinear coefficient d33 of the corona‐poled glass films are estimated to be ∼0.5 pm/V. Using the corona‐poled glass films as a waveguide, phase‐matched second‐harmonic generation has been demonstrated in the glass films for the first time. The origin of the χ(2) is considered to be related to the defects in the glass films.
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42.70.Ce Glasses, quartz
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Gn Optical waveguides and couplers

X rays in electron‐cyclotron‐resonance processing plasmas

T. J. Castagna, J. L. Shohet, D. D. Denton, and N. Hershkowitz

Appl. Phys. Lett. 60, 2856 (1992); http://dx.doi.org/10.1063/1.106846 (3 pages) | Cited 4 times

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Electron‐cyclotron‐resonance processing plasmas have been shown to produce low‐energy x rays. X radiation was detected in nitrogen and CF4 plasmas from energies of 1–17 keV for microwave powers up to 1000 W. The x‐ray flux decreased with increasing pressure over the range of 0.5–3.5 mTorr. Temperatures of the hot electrons responsible for creating the x rays were estimated from the slopes of the x‐ray spectra and decreased with increasing pressure. The measured x‐ray flux decreased substantially when the magnetic field configuration was changed. Measurable x radiation is produced whenever a field line that passes through the cyclotron resonance surface intersects the vacuum chamber walls and/or other solid surfaces inside the source chamber.
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52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.75.-d Plasma devices
52.50.Gj Plasma heating by particle beams
81.65.-b Surface treatments

Period‐doubling bifurcation in a plasma reactor

Paul A. Miller and K. E. Greenberg

Appl. Phys. Lett. 60, 2859 (1992); http://dx.doi.org/10.1063/1.106847 (3 pages) | Cited 14 times

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We describe the response of an industrial plasma reactor to excitation at varying power levels. When the reactor is excited at low power, rf voltage and current waveforms contain components at multiples of the drive frequency (13.56 MHz) due to the plasma’s nonlinear impedance. As power is increased, a transition point is reached and the waveforms change. Above the transition power level, signals at the half‐harmonic frequency (6.78 MHz) and its multiples are also present, which is indicative of a period‐doubling bifurcation. Above and below the bifurcation point, the dc bias and the etch rate behave quite differently.
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52.80.Pi High-frequency and RF discharges
52.70.Gw Radio-frequency and microwave measurements
52.50.Dg Plasma sources

Relaxation by the modified Frank–Read mechanism in compositionally uniform thin films

F. K. LeGoues, K. Eberl, and S. S. Iyer

Appl. Phys. Lett. 60, 2862 (1992); http://dx.doi.org/10.1063/1.106848 (3 pages) | Cited 12 times

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Relaxation of compositionally graded SiGe films during growth has recently been shown to occur through the multiplication of dislocations by the so‐called modified Frank–Read mechanism. Here, we show that the same mechanism is observed, during ex situ annealing of highly metastable, compositionally uniform layers. However, unlike graded layers, threading dislocations penetrate the upper layers of the film after relaxation. We explain the occurrence of the modified Frank–Read mechanism in ungraded layers by the lack of dislocation nucleation sites. The threading dislocations result from the fact that, in compositionally uniform layers, all dislocations tend to be located at (or very near) the plane of the interface, generating numerous pinning sites.
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61.72.Bb Theories and models of crystal defects
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Enhanced nucleation and growth of diamond on SiC by plasma enhanced chemical vapor deposition using thin metal films

J. E. Yehoda, R. I. Fuentes, J. C. Tsang, S. J. Whitehair, C. R. Guarnieri, and J. J. Cuomo

Appl. Phys. Lett. 60, 2865 (1992); http://dx.doi.org/10.1063/1.106826 (3 pages) | Cited 13 times

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Presented is a method for growing crystalline diamond films by plasma enhanced chemical vapor deposition without the need for seeding with diamond particles. Instead, diamond nucleation and growth is ‘‘catalyzed’’ by a thin metal film which has been either abraded or deposited onto a SiC coated substrate. In the first experiment Fe, Cu, Ti, Nb, Mo, and Ni were abraded onto a SiC surface resulting in varying degrees of diamond nucleation and growth. In the second experiment, Fe films with thickness varying from 5 to 80 Å were evaporated onto the SiC. Although the 5 Å Fe film did not influence the initial nucleation and growth rate, greater thicknesses did. Preliminary studies of Fe on Si have not shown this effect.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

In‐process ellipsometric monitoring of diamond film growth by microwave plasma enhanced chemical vapor deposition

Yasuaki Hayashi, William Drawl, R. W. Collins, and Russell Messier

Appl. Phys. Lett. 60, 2868 (1992); http://dx.doi.org/10.1063/1.106827 (3 pages) | Cited 8 times

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In‐process monitoring of diamond film growth was performed with near‐infrared ellipsometry (1550 nm). The trajectories in the ellipsometric parameters (ψ,Δ) differ according to the method of substrate pretreatment and the CO/H2 gas ratio used in the microwave plasma‐enhanced chemical vapor deposition process. The nucleation density determined from ellipsometry shows qualitative agreement with that from scanning electron microscopy performed after deposition. The rate at which nuclei develop is also monitored, and the observed induction time is shorter for conditions leading to a higher nucleation density.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Photo‐assisted structural transition and oxygen diffusion in solid C60 films

Ping Zhou, A. M. Rao, Kai‐An Wang, J. D. Robertson, C. Eloi, Mark S. Meier, S. L. Ren, Xiang‐Xin Bi, P. C. Eklund, and M. S. Dresselhaus

Appl. Phys. Lett. 60, 2871 (1992); http://dx.doi.org/10.1063/1.106828 (3 pages) | Cited 99 times

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Using Raman scattering we have observed a phototransformation of C60 films on Si(100) from a face‐centered‐cubic (fcc) phase to a second solid phase leaving the C60 molecules intact. Furthermore, photoassisted oxygen diffusion into the deep bulk is detected using alpha resonance scattering. The Raman spectrum for oxygen‐doped C60 is found to be similar to the result for oxygen‐free fcc C60, and oxygen is found to harden the film against phototransformation.
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64.70.K- Solid-solid transitions
66.30.J- Diffusion of impurities
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.30.Hv Other nonmetallic inorganics

Mechanism of the growth of microcrystalline silicon

Jin Jang, Sung Ok Koh, Tae Gon Kim, and Sung Chul Kim

Appl. Phys. Lett. 60, 2874 (1992); http://dx.doi.org/10.1063/1.106804 (3 pages) | Cited 13 times

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We studied the behavior of hydrogen atoms bonded to Si in hydrogenated amorphous silicon (a‐Si:H) films prepared by layer by layer deposition technique, in which deposition of a few tens of a‐Si:H film and hydrogen radical exposure on the surface are done alternatively, with variations of each layer thickness and the exposure time to hydrogen radicals. With increasing the exposure time, the hydrogen atoms are incorporated until reaching a saturation, and then out‐diffused by forming molecular hydrogen. In this process, the microcrystalline structure is formed.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
66.30.J- Diffusion of impurities

Photoluminescence of virtual‐surfactant grown InAs/Al0.48In0.52As single quantum wells

Eric Tournié, Oliver Brandt, and Klaus Ploog

Appl. Phys. Lett. 60, 2877 (1992); http://dx.doi.org/10.1063/1.106805 (3 pages) | Cited 23 times

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Strained InAs/Al0.48In0.52As single quantum wells (QWs) grown by solid‐source molecular beam epitaxy on InP substrates are studied by photoluminescence spectroscopy. The thickness of the InAs QW lies between 2 and 16 monolayers, corresponding to an intrinsic emission wavelength between 0.9 and 1.8 μm at 6 K. We demonstrate that the growth of the InAs QW under virtual‐surfactant conditions, i.e., by keeping the As shutter closed throughout the growth of the well, gives a striking improvement of the optical properties, as compared to conventionally grown samples. Finally, we report on the first room‐temperature luminescence of this QW system.
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78.55.Cr III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Stable amorphous silicon double stacked solar cell using low band gap amorphous silicon bottom i layer

Jin Jang, Tae Gon Kim, Sung Chul Kim, Jung Mok Jun, and Kyu Chang Park

Appl. Phys. Lett. 60, 2880 (1992); http://dx.doi.org/10.1063/1.106806 (3 pages) | Cited 2 times

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We studied the preparation of low‐band‐gap amorphous silicon(a‐Si) and the photovoltaic applications of this material. We obtained a‐Si with optical band gap between 1.60 and 1.65 eV with hydrogen content less than 6 at.% and used this material as the bottom i layer of a‐Si double‐stacked solar cells. The conversion efficiency is about 9% and the degradation is less than 4% after light exposure for 100 h under 350 mW/cm2.
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84.60.Jt Photoelectric conversion
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.50.Pz Photoconduction and photovoltaic effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Long‐term annealing study of midgap interface‐trap charge neutrality

D. M. Fleetwood

Appl. Phys. Lett. 60, 2883 (1992); http://dx.doi.org/10.1063/1.106807 (3 pages) | Cited 17 times

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Non‐radiation‐hardened metal‐oxide‐semiconductor (MOS) devices were irradiated to doses from 30 to 90 krad(SiO2) and baked at 100 °C under positive bias for 2.75 yr. Threshold‐voltage shifts due to radiation‐induced oxide‐ and interface‐trap charge were estimated via the subthreshold current‐voltage technique of McWhorter and Winokur [Appl. Phys. Lett. 48, 133 (1986)], which depends on the assumption that radiation‐induced interface traps are neutral at midgap surface potential. The oxide‐trap charge inferred via this technique asymptotically approached zero ∼9 months after irradiation and remained constant for the next 2 yr, despite large changes in the subthreshold current‐voltage characteristics caused by changes in interface‐trap density (which increased during the first 4–9 months of 100 °C annealing, then decreased during the remaining 2–2.5 yr). This strongly reinforces the often controversial idea that radiation‐induced interface traps are charge‐neutral at midgap. Finally, a new figure of merit is developed to assess the self‐consistency of interface‐trap charge measurements on irradiated MOS devices.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.80.Ed γ-ray effects
85.30.Tv Field effect devices

Nanocrystalline germanium synthesis from hydrothermally oxidized Si1−xGex alloys

David C. Paine, Christine Caragianis, and Yuzo Shigesato

Appl. Phys. Lett. 60, 2886 (1992); http://dx.doi.org/10.1063/1.106808 (3 pages) | Cited 35 times

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We have used low temperature (475 °C), high pressure (25 MPa) hydrothermal oxidation to form compositionally congruent oxides from epitaxial thin film alloys of Si90Ge10. The resulting Si90Ge10O2 oxide alloys are shown to be thermodynamically unstable when in contact with Si but remain microstructurally unchanged on annealing at 700 °C for 1 h. After annealing for 1 h at 800 °C, Raman spectroscopy and cross‐sectional transmission electron microscopy reveal the presence of crystalline Ge precipitates in the oxide. Transmission electron microscopy was used to show that these precipitates are distributed through the oxide thickness, and range in size from 1 to 20 nm after a 1 h, 800 °C anneal.
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81.20.-n Methods of materials synthesis and materials processing
81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging
64.70.K- Solid-solid transitions

Electron spin resonance of separation by implanted oxygen oxides: Evidence for structural change and a deep electron trap

J. F. Conley, P. M. Lenahan, and P. Roitman

Appl. Phys. Lett. 60, 2889 (1992); http://dx.doi.org/10.1063/1.106809 (3 pages) | Cited 22 times

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We present direct evidence for deep electron traps and structural changes in separation by implanted oxygen (SIMOX) buried oxides and evidence that some positively charged E′ centers are compensated by negatively charged centers in SIMOX oxides.
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71.55.Ht Other nonmetals
73.61.Ng Insulators
76.30.Mi Color centers and other defects

Formation of lateral quantum wells in vertical short‐period superlattices by strain‐induced lateral‐layer ordering process

K. Y. Cheng, K. C. Hsieh, and J. N. Baillargeon

Appl. Phys. Lett. 60, 2892 (1992); http://dx.doi.org/10.1063/1.106810 (3 pages) | Cited 110 times

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The lateral quantum wells formed in vertical (GaAs)n/(InAs)n and (GaP)n/(InP)n short‐period superlattices (SPS) grown on nominally (100) InP and GaAs substrates, respectively, have been examined. The strain induced from the deviation of superlattice periodicity from na0 is the major driving force of the lateral modulation of the composition along the [110] direction, where the integer n is the number of monolayers of each binary compound within a period of SPS structure and a0 is the lattice constant of the substrate material. When the deviation of the superlattice periodicity from na0 is larger than ∼4%, both (GaAs)n/(InAs)n and (GaP)n/(InP)n ordered vertical SPS layers were found to have a lateral periodic modulation of composition with periodicities as small as ∼200 Å. This effect is enhanced when n was increased from 1 to 2.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Hole confinement effects on multiple Si δ doping in GaAs

S. M. Shibli, L. M. R. Scolfaro, J. R. Leite, C. A. C. Mendonça, F. Plentz, and E. A. Meneses

Appl. Phys. Lett. 60, 2895 (1992); http://dx.doi.org/10.1063/1.106811 (2 pages) | Cited 29 times

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The observation of quantum‐confined optical transitions in multiple δ doping in GaAs, grown by molecular beam epitaxy, is reported. Doping efficiency and carrier confinement are investigated by Hall and photoluminescence measurements. Hall measurement results for multiple δ‐doped samples show a dramatic enhancement of carrier concentrations compared to the uniform doping case. From photoluminescence spectra we observed that the cutoff energy is significantly affected by the spacing between the dopant sheets. The strong localization of confined photoexcited holes in the spacing layers of these structures plays a fundamental role in the interpretation of the optical data.
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78.55.Cr III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.20.Fz Weak or Anderson localization
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