APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

22 Jun 1992

Volume 60, Issue 25, pp. 3081-3190

Page 1 of 2 Pages Next Page | Jump to Page

First‐order phase transition in a laser threshold

D. G. Deppe, D. L. Huffaker, T. J. Rogers, C. Lei, Z. Huang, and B. G. Streetman

Appl. Phys. Lett. 60, 3081 (1992); http://dx.doi.org/10.1063/1.106758 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
A mechanism for achieving a first‐order phase transition in the threshold characteristics of a laser is discussed, and data demonstrating the effect are presented. It is suggested that a first‐order phase transition can be realized through the design of a laser active region if the gain medium is localized to a spatial region with longitudinal dimensions much less than the wavelength of the resulting laser light. Evidence of the first‐order phase transition is presented in the spontaneous emission characteristics of a microcavity semiconductor laser, which shows a decrease in the separation energy of the quasi‐Fermi levels at threshold, along with hysteresis in the light versus current characteristics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Astigmatically compensated, high gain cooperative upconversion laser

P. Xie and S. C. Rand

Appl. Phys. Lett. 60, 3084 (1992); http://dx.doi.org/10.1063/1.106759 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
We demonstrate a cw Er:LiYF4 trio laser in a 3‐mirror cavity configuration, and investigate details of the mechanism yielding stimulated upconversion well above liquid nitrogen temperatures with an efficiency of 20%.
Show PACS
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.-v Laser optical systems: design and operation
42.79.Nv Optical frequency converters

Observation of laser emission in an InP‐AlInAs type II superlattice

E. Lugagne‐Delpon, P. Voisin, M. Voos, and J. P. André

Appl. Phys. Lett. 60, 3087 (1992); http://dx.doi.org/10.1063/1.106760 (3 pages) | Cited 16 times

Full Text: | Download PDF

Show Abstract
We report the observation of laser emission at low temperature from an optically pumped InP‐AlInAs superlattice grown by metalorganic chemical vapor deposition. Independent measurements of low level photoluminescence excitation and optical absorption show that laser emission occurs between spatially separated conduction and valence levels localized, respectively, in InP and AlInAs, with a calculated wave function overlap as low as 0.04. High radiative efficiency observed in this system is believed to be a genuine consequence of the type II band lineup.
Show PACS
78.45.+h Stimulated emission
42.55.Px Semiconductor lasers; laser diodes
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Co‐lasing in an electrically tunable erbium‐doped fiber laser

Jay W. Dawson, Namkyoo Park, and Kerry J. Vahala

Appl. Phys. Lett. 60, 3090 (1992); http://dx.doi.org/10.1063/1.106761 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
We demonstrate simultaneous wavelength operation (co‐lasing) of an erbium‐doped fiber ring laser with independent tunability of each wavelength over 35 nm between 1528 and 1563 nm. We study two different configurations and also investigate use of aluminum versus germanium codoped gain modules in the ring. We find that the aluminum codoped gain module has superior tunability.
Show PACS
42.55.Wd Fiber lasers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.60.Fc Modulation, tuning, and mode locking

Linear electro‐optic effects in polymer‐dispersed ferroelectric liquid crystals

Heinz‐S. Kitzerow, Henning Molsen, and Gerd Heppke

Appl. Phys. Lett. 60, 3093 (1992); http://dx.doi.org/10.1063/1.106762 (3 pages) | Cited 52 times

Full Text: | Download PDF

Show Abstract
We demonstrate that ferroelectric liquid crystals are suitable for application in polymer‐dispersed liquid crystal (PDLC) displays. The alignment of the liquid crystal can be controlled by mechanical shear during the polymerization‐induced phase separation between the liquid crystal and the UV‐curable adhesive which forms the polymer matrix. Helical unwinding in the smectic SmC phase and the electroclinic effect in the smectic SmA phase have been found in these samples. Both effects lead to a rotation of the optical axis in the plane perpendicular to the electric field. Switching times are of the order 100 μs.
Show PACS
42.79.Kr Display devices, liquid-crystal devices
61.30.-v Liquid crystals
77.80.-e Ferroelectricity and antiferroelectricity

Γ effect: Key intermodal‐discrimination mechanism in arrays of antiguided diode lasers

D. Botez and L. J. Mawst

Appl. Phys. Lett. 60, 3096 (1992); http://dx.doi.org/10.1063/1.106763 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
By using results of the Bloch‐function method applied to infinite‐extent antiguided arrays, a closed‐form expression has been derived, for the first time, for Γ, the two‐dimensional array‐mode confinement factor. When array modal behavior is analyzed, as the interelement‐region width varies, domains of in‐phase (i.e., single‐lobe) array operation are found to occur periodically around the resonance points of in‐phase modes. It is made clear why coupled‐mode theory failed to predict how to obtain single‐lobe phase‐locked operation. Results of an exact analysis of a 20‐element array are discussed, with the main conclusion being that the Γ effect, while being the key mechanism for selecting single‐lobe array operation, does not insure purely diffraction‐limited beams to high powers.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Thermally stable operation of a bistable Fabry–Perot etalon with a bulk GaAs spacer

B. Acklin, C. Bagnoud, M. A. Dupertuis, M. Proctor, F. Morier‐Genoud, and D. Martin

Appl. Phys. Lett. 60, 3099 (1992); http://dx.doi.org/10.1063/1.106764 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
We report thermally stable latched operation of a nonlinear Fabry–Perot device without heat sinking other than through the 0.5‐mm GaAs substrate. The device has a 2‐μm GaAs spacer and integrated dielectric mirrors with reflectivities of 91% and 99%. Operated in reflection at a wavelength of 886 nm, thresholds as low as 1 mW, and contrast ratios of 10:1 have been observed. Measurements of the threshold dependence on the size of the excited spot give evidence for carrier diffusion and light‐diffraction effects.
Show PACS
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.-e Optical elements, devices, and systems
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Cholesteric liquid crystal/polymer dispersion for haze‐free light shutters

D.‐K. Yang, L.‐C. Chien, and J. W. Doane

Appl. Phys. Lett. 60, 3102 (1992); http://dx.doi.org/10.1063/1.106765 (3 pages) | Cited 179 times

Full Text: | Download PDF

Show Abstract
A new dispersion involving a polymer in low concentration with a cholesteric liquid crystal is reported. Two types of light modulators from these materials are described as a normal mode shutter which is opaque (light scattering) in the field‐OFF state and transparent in the field‐ON state and a reverse‐mode shutter with the opposite field conditions. The transparent state of both cells is haze‐free for all viewing angles making the material attractive for window applications and direct view displays.
Show PACS
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
42.79.Kr Display devices, liquid-crystal devices
42.70.Df Liquid crystals

MgO epitaxial thin films on (100) GaAs as a substrate for the growth of oriented PbTiO3

Wei‐Yung Hsu and Rishi Raj

Appl. Phys. Lett. 60, 3105 (1992); http://dx.doi.org/10.1063/1.106766 (3 pages) | Cited 51 times

Full Text: | Download PDF

Show Abstract
Epitaxial MgO thin films were grown on (100) GaAs substrates by reactive rf magnetron sputtering. Coupled x‐ray diffraction, off‐axis ϕ scan, and transmission electron microscopy indicated in‐plane alignment of the MgO film with the GaAs substrate such that MgO[100]∥GaAs[100]. PbTiO3 ferroelectric thin films, grown on this MgO surface, were found to be oriented with PbTiO3{100}∥ MgO(001)∥ GaAs(001) and PbTiO3〈100〉∥ MgO[100]∥ GaAs[100].
Show PACS
81.15.Kk Vapor phase epitaxy; growth from vapor phase
77.80.-e Ferroelectricity and antiferroelectricity
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
81.15.Cd Deposition by sputtering

Measurement of temporal coherence of light with copolarized and cross‐polarized beams using cw laser‐induced gratings

K. Divakara Rao, Rajan S. Gurjar, Bipin Bihari, G. Ravindra Kumar, and K. K. Sharma

Appl. Phys. Lett. 60, 3108 (1992); http://dx.doi.org/10.1063/1.106767 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
The temporal coherence of a cw laser has been measured using self‐diffraction from a thin film of a rhodamine 6G‐doped boric‐acid glass. This and other similar glasses cover a wide spectral range over which such measurements can be made. The input power requirements for this technique to work in these glasses are rather nominal. These glasses can be used to obtain mutual coherence function of beams even when they are cross polarized. The results of an interferometric measurement are given for comparison.
Show PACS
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.65.-k Nonlinear optics

Surface structure of hydrated amorphous silicon oxide at 3 Å resolution by scanning force microscopy

Ralf W. Tillmann, Manfred Radmacher, and Hermann E. Gaub

Appl. Phys. Lett. 60, 3111 (1992); http://dx.doi.org/10.1063/1.106768 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
The topology of a fully hydrated amorphous silicon oxide surface was studied with a scanning force microscope. The structure of the surface could be resolved down to 0.3 nm. The autocorrelation function of the surface relief exhibited no long range periodicity and had a glasslike character with a next neighboring repeat distance of 0.4–0.5 nm. The correlation between images obtained simultaneously from forward and backward scans was high and therefore showed that the measured surface reliefs are to a large extent independent from the local tip shape. The pair‐correlation functions of subsequent images of the same surface area, however, revealed a decay over several minutes which indicates that a rearrangement of the surface may occur. 
Show PACS
07.10.-h Mechanical instruments and equipment
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.43.Fs Glasses
61.43.-j Disordered solids
61.44.Br Quasicrystals

Selective low pressure chemical vapor deposition of copper: Effect of added water vapor in hydrogen or helium carrier gas

B. Lecohier, B. Calpini, J.‐M. Philippoz, T. Stumm, and H. van den Bergh

Appl. Phys. Lett. 60, 3114 (1992); http://dx.doi.org/10.1063/1.106769 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
The low pressure chemical vapor deposition (LPCVD) of copper from its bis‐hexafluoroacetylacetonate is studied on oxidized silicon substrates partially covered with a platinum seeding layer. With a known concentration of water vapor in the gas mixture, almost equal copper film growth rates are obtained when using either hydrogen or helium as carrier gas. For both carrier gases, an increase of the copper growth rate is observed with an increasing amount of water vapor added to the gas mixture, and deposition rates above 500 Å/min are obtained. The chemical purity and electrical conductivity of the copper deposit are as high in the case of a helium carrier gas as in the case of a hydrogen carrier gas. Implications for the mechanism of copper LPCVD are discussed.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.40.Ls Metallization, contacts, interconnects; device isolation

Photoluminescence spectra from porous silicon (111) microstructures: Temperature and magnetic‐field effects

Clive H. Perry, Feng Lu, Fereydoon Namavar, Nader M. Kalkhoran, and Richard A. Soref

Appl. Phys. Lett. 60, 3117 (1992); http://dx.doi.org/10.1063/1.106770 (3 pages) | Cited 33 times

Full Text: | Download PDF

Show Abstract
Visible and near‐infrared (IR) photoluminescence emission spectra (0.9–3.0 eV) from p‐type porous Si(111) microstructures are reported as a function of temperature and magnetic field. The visible peak located at 1.84 eV at 4 K shifted to ∼1.56 eV at 575 K where it disappeared; the intensity reached a maximum value at ∼150 K. The photoluminescence spectrum showed no measurable shift in the peak position with magnetic field from 0 to 15 T. Strong IR intrinsic band‐to‐band emission above and below the bulk silicon band gap at ∼1.09 eV at 300 K was observed. This luminescence was found to be enhanced by two orders of magnitude or more over the IR spectrum from an unanodized wafer.
Show PACS
78.55.Hx Other solid inorganic materials
78.30.Hv Other nonmetallic inorganics
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Stress relaxation in Mo/Si multilayer structures

R. R. Kola, D. L. Windt, W. K. Waskiewicz, B. E. Weir, R. Hull, G. K. Celler, and C. A. Volkert

Appl. Phys. Lett. 60, 3120 (1992); http://dx.doi.org/10.1063/1.106771 (3 pages) | Cited 22 times

Full Text: | Download PDF

Show Abstract
The as‐deposited stress in sputtered, 75‐Å‐period Mo/Si multilayers was measured to be approximately −350 MPa (compressive), and relaxed to approximately −150 MPa after thermal cycling to 200 °C. The multilayer period was found to decrease by 0.25 Å as a result of thermal cycling, with only a slight decrease in peak soft‐x‐ray reflectance. The stress‐temperature behavior of individual Mo and Si films was also measured, and correlated with the multilayer behavior: stress relaxation in the multilayer is attributed to viscous flow associated with defect annihilation, occurring predominantly in the amorphous Si layers.
Show PACS
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.15.Cd Deposition by sputtering
78.66.Sq Composite materials

Ultrafast reversible phase change in GeSb films for erasable optical storage

C. N. Afonso, J. Solis, F. Catalina, and C. Kalpouzos

Appl. Phys. Lett. 60, 3123 (1992); http://dx.doi.org/10.1063/1.106772 (3 pages) | Cited 34 times

Full Text: | Download PDF

Show Abstract
Amorphous‐to‐crystalline and crystalline‐to‐amorphous transformations are triggered in GeSb thin films by irradiation with femtosecond and picosecond laser pulses. Phase changes are accompanied with optical contrast and therefore the feasibility of phase‐change optical recording at ultrafast rates is demonstrated for the first time. The phase reversal by ultrashort pulses seems to be related to the dependence of the degree of undercooling prior to solidification on the irradiation energy density.
Show PACS
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.40.Tv Optical and dielectric properties related to treatment conditions

Enhanced growth of device‐quality copper by hydrogen plasma‐assisted chemical vapor deposition

Eric T. Eisenbraun, Bo Zheng, Christopher P. Dundon, Pei Jun Ding, and Alain E. Kaloyeros

Appl. Phys. Lett. 60, 3126 (1992); http://dx.doi.org/10.1063/1.106773 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
A hydrogen plasma‐assisted chemical vapor deposition (PACVD) process has been developed for the growth of device‐quality copper films on large‐area substrates. The process takes advantage of the high concentration of reactive hydrogen species present in the low‐power plasma to enhance the clean reduction of copper β‐diketonate precursors such as bis(hexafluoroacetylacetonato)copper(II). Copper films were produced at substrate temperatures of 160–170 °C, reactor working pressures of 1.3–1.7 Torr, hydrogen flow rates between 700 and 1200 cc/min, and hydrogen plasma power ranging from 15 to 30 W (with an equivalent power density of ∼0.10–0.25 W/cm2. The films were characterized by x‐ray photoelectron spectroscopy, Rutherford backscattering spectroscopy, scanning electron microscopy (SEM), and cross‐section SEM. These studies indicate that PACVD processes pure, dense, highly uniform films, and allows conformal step coverage and complete hole filling of patterned test structures. Growth rates over large‐area substrates were as high as 1000 Å/min.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.40.Ls Metallization, contacts, interconnects; device isolation

Epitaxial growth of MgO on (100)GaAs using ultrahigh vacuum electron‐beam evaporation

L. S. Hung, L. R. Zheng, and T. N. Blanton

Appl. Phys. Lett. 60, 3129 (1992); http://dx.doi.org/10.1063/1.106745 (3 pages) | Cited 42 times

Full Text: | Download PDF

Show Abstract
Epitaxial layers of MgO grown on (NH4)xS‐treated (100)GaAs substrates were prepared by electron‐beam evaporation in an ultrahigh vacuum system without introducing additional oxygen. The films deposited at 500 °C were found to grow with stoichiometric composition and have (110) planar orientation. X‐ray pole‐figure analysis showed that the [110] direction in the MgO(110) plane is parallel to the [011] direction in the GaAs(100) plane with a 4: 3 coincident site lattice. The film surface was smooth with no signs of structural defects or microcracks.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Comparison of magnetic and electric field induced switching in polymer dispersed liquid crystal films

Zili Li, J. R. Kelly, P. Palffy‐Muhoray, and C. Rosenblatt

Appl. Phys. Lett. 60, 3132 (1992); http://dx.doi.org/10.1063/1.106746 (3 pages) | Cited 15 times

Full Text: | Download PDF

Show Abstract
We report, for the first time, the switching of a polymer dispersed liquid crystal film by a magnetic field. We have measured the optical transmittance of such samples as a function of magnetic and electric field strength. The response to these fields is similar. The observed behavior is in good agreement with theoretical predictions. The magnetic field results give information about the origin of the observed hysteresis.
Show PACS
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
78.20.Jq Electro-optical effects
78.20.Ls Magneto-optical effects

In situ diamond growth rate measurement using emission interferometry

Keith A. Snail and Cheinan M. Marks

Appl. Phys. Lett. 60, 3135 (1992); http://dx.doi.org/10.1063/1.106747 (3 pages) | Cited 39 times

Full Text: | Download PDF

Show Abstract
The growth rate of diamond synthesized in an oxygen‐acetylene flame has been measured in situ with an infrared pyrometer. During the growth, the sample’s emitted radiation intensity is modulated in time by interference phenomena in the growing diamond film, causing a periodic variation of the pyrometer’s apparent temperature reading. Diamond film growth rates determined from the period of these oscillations agree well with rates derived from the film thickness. This technique is used to determine the variation of diamond growth rate with substrate temperature over the range of 444–1200 °C. An Arrhenius analysis of the data shows two distinct diamond growth regimes.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

On the ‘‘band‐A’’ emission and boron related luminescence in diamond

J. Ruan, Koji Kobashi, and W. J. Choyke

Appl. Phys. Lett. 60, 3138 (1992); http://dx.doi.org/10.1063/1.106748 (3 pages) | Cited 66 times

Full Text: | Download PDF

Show Abstract
Cathodoluminescence spectra of undoped and boron‐doped diamond films are reported and are compared with each other. The dominant spectra feature of these samples is the broad luminescence bands centered around 2.83 and 2.32 eV in undoped and relatively heavily doped samples, respectively. Our result indicates that the commonly observed 2.83 eV band (often called by the name ‘‘band‐A’’) is neither related to boron nor to donor‐acceptor pairs in diamond. From all of the available data, we conclude that the 2.32 eV band is due to boron related centers and the 2.83 eV band is due to dislocations in diamond.
Show PACS
78.60.Hk Cathodoluminescence, ionoluminescence
61.72.up Other materials
78.66.-w Optical properties of specific thin films

Rapid modulation of interband optical properties of quantum wells by intersubband absorption

Vera B. Gorfinkel and Serge Luryi

Appl. Phys. Lett. 60, 3141 (1992); http://dx.doi.org/10.1063/1.106749 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
Intersubband absorption of radiation by a two‐dimensional electron gas can be used to control the electron temperature and effect a significant modulation of the interband optical properties of the semiconductor in the quantum well. We discuss the implementation of a fast modulator of infrared radiation for fiber‐optical communications as well as the formation of powerful and short single‐mode infrared pulses.
Show PACS
42.79.Hp Optical processors, correlators, and modulators
42.60.Fc Modulation, tuning, and mode locking
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Organometallic vapor‐phase homoepitaxy of gallium arsenide assisted by a downstream hydrogen afterglow plasma in the growth region

B. G. Pihlstrom, T. Y. Sheng, L. R. Thompson, and G. J. Collins

Appl. Phys. Lett. 60, 3144 (1992); http://dx.doi.org/10.1063/1.106750 (3 pages)

Full Text: | Download PDF

Show Abstract
In situ generated arsenic hydrides are reacted downstream with trimethylgallium (TMGa), both in the presence of and in the absence of a downstream hydrogen afterglow plasma. The homoepitaxial activation energy dramatically changes from 62 kcal/mol for the pure thermal to 21 kcal/mol for the plasma‐assisted growth. The carbon incorporation mechanism for the plasma‐assisted growth at temperatures less than 400 °C has a distinct activation energy for carbon incorporation of 23 kcal/mol, independent of V‐III ratios. At temperatures above 400 °C, the level of carbon incorporated in the films reaches a level that appears to be dependent on the gas‐phase precursor V‐III ratio. The activation energy of the low‐temperature region is consistent with the surface decomposition of arsenic hydrides.
Show PACS
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Low‐dislocation‐density silicon‐on‐insulator material produced by sequential oxygen implantation and low‐temperature annealing

D. Venables, K. S. Jones, and F. Namavar

Appl. Phys. Lett. 60, 3147 (1992); http://dx.doi.org/10.1063/1.107466 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
Lattice strain and defect formation in oxygen‐implanted silicon (SIMOX) were investigated by high‐resolution x‐ray diffraction and transmission electron microscopy. At doses of 1×1017 and 3×1017 cm−2 a high density of vacancy‐type defects formed in a uniaxially compressed layer at the surface of the as‐implanted wafer. Annealing at 900 °C for 0.5 h reduced this negative strain as the defects coarsened into observable cavities. The development of cavities upon annealing was used in a sequential‐implantation and low‐temperature‐annealing process to produce low‐threading dislocation density SIMOX. This new process offers several advantages over other methods of producing low‐dislocation‐density material.
Show PACS
61.80.Jh Ion radiation effects
61.72.uf Ge and Si
61.72.Bb Theories and models of crystal defects

Anomalous electric field and temperature dependence of collector multiplication in InP/Ga0.47In0.53As heterojunction bipolar transistors

D. Ritter, R. A. Hamm, A. Feygenson, and M. B. Panish

Appl. Phys. Lett. 60, 3150 (1992); http://dx.doi.org/10.1063/1.106751 (3 pages) | Cited 36 times

Full Text: | Download PDF

Show Abstract
The collector multiplication in InP/Ga0.47In0.53As heterojunction bipolar transistors was found to increase with temperature, and to have a weak electric field dependence. This anomalous behavior has a profound impact on device characteristics.
Show PACS
85.30.Pq Bipolar transistors
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Optoelectronic devices based on type II polytype tunnel heterostructures

H. Ohno, L. Esaki, and E. E. Mendez

Appl. Phys. Lett. 60, 3153 (1992); http://dx.doi.org/10.1063/1.106726 (3 pages) | Cited 20 times

Full Text: | Download PDF

Show Abstract
We describe a new family of optoelectronic devices based on the unique properties of combinations of semiconductor tunnel junctions with type II polytype heterostructures. A typical light‐emitting device structure consists of AlSb (thin barrier)/InAs(quantum well)/AlSb(thin barrier) structure clad by AlInAsSb emitter and GaSb collector. The emission source is the intersubband radiative transition between the first two subbands in the InAs well. Since the conduction‐bank minimum of InAs is energetically lower than the valence‐band maximum of GaSb, the device can be designed in such a way that electrons are injected only into the higher subband and extracted out only from the lower subband, both via tunneling, leading to an intraband population inversion and highly efficient radiative transitions. The same operation principle can be applied to design detector structures.
Show PACS
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.60.Jb Light-emitting devices
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close