APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

22 Jun 1992

Volume 60, Issue 25, pp. 3081-3190

Page 2 of 2 Pages Previous Page | Jump to Page

Effects of radiation‐induced oxide‐trapped charge on inversion‐layer hole mobility at 300 and 77 K

D. Zupac, K. F. Galloway, R. D. Schrimpf, and P. Augier

Appl. Phys. Lett. 60, 3156 (1992); http://dx.doi.org/10.1063/1.106727 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
The effects of radiation‐induced interface‐trapped charge and oxide‐trapped charge on the inversion‐layer hole mobility in p‐channel double‐diffused metal‐oxide‐semiconductor transistors at 300 and 77 K are reported. The mobility degradation is more pronounced at 77 than at 300 K, due to an increased importance of Coulomb scattering from trapped charge when phonon scattering is significantly reduced. The mobility degradation is primarily due to interface‐trapped charge, but the effects of oxide‐trapped charge must be taken into account in order to properly describe the mobility behavior, particularly at cryogenic temperatures.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices
61.80.Ed γ-ray effects

Critical layer thickness on (111)B‐oriented InGaAs/GaAs heteroepitaxy

Takayoshi Anan, Kenichi Nishi, and Sigeo Sugou

Appl. Phys. Lett. 60, 3159 (1992); http://dx.doi.org/10.1063/1.106728 (3 pages) | Cited 34 times

Full Text: | Download PDF

Show Abstract
The critical layer thickness of lattice‐mismatched InGaAs on (111)B‐oriented GaAs was investigated by monitoring surface lattice relaxation using streak spacing on the reflection high‐energy electron diffraction pattern. The critical layer thickness (hc) grown on (111)B was about twice that of a (100) under the same growth conditions. A qualitative explanation for the enhancement of hc is given based on the mechanical equilibrium theory developed by J. W. Matthews and A. E. Blakeslee [J. Cryst. Growth 27, 118 (1974)] for a strained single heterostructure.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology

Low‐temperature dc characteristics of S‐ and Si‐doped Ga0.51In0.49P/GaAs high electron mobility transistors grown by metalorganic molecular beam epitaxy

A. Ginoudi, E. C. Paloura, G. Kostandinidis, G. Kiriakidis, Ph. Maurel, J. C. Garcia, and A. Christou

Appl. Phys. Lett. 60, 3162 (1992); http://dx.doi.org/10.1063/1.106729 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
Ga0.51In0.49P/GaAs high electron mobility transistors (HEMTs) grown by metalorganic molecular beam epitaxy have been fabricated for the first time. The typical transconductance (gm) of devices of 1.3‐μm gate length at 300 K is 110 mS/mm and is independent of donor type. At 100 K the dc characteristics of Si‐doped devices remain almost unchanged, while there is a decrease of 55% in gm and in the drain‐source saturation current (Idss) of the S‐doped devices. The degradation of the S‐doped HEMTs is attributed to ‘‘DX‐like’’ centers in the doped GaInP layer. All of the doped samples are characterized by a deep electron trap with an activation energy that takes values in the range 310–345 meV and causes persistent photoconductivity (PPC) in S‐doped samples, while Si doping suppresses the PPC effect.
Show PACS
85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Dependence on doping type (p/n) of the water vapor oxidation of high‐gap AlxGa1−xAs

F. A. Kish, S. A. Maranowski, G. E. Höfler, N. Holonyak, S. J. Caracci, J. M. Dallesasse, and K. C. Hsieh

Appl. Phys. Lett. 60, 3165 (1992); http://dx.doi.org/10.1063/1.106730 (3 pages) | Cited 24 times

Full Text: | Download PDF

Show Abstract
The oxidation (H2O vapor+N2 carrier gas, 425–525 °C) of high‐gap AlxGa1−xAs of different doping types (p and n) is characterized by oxide depth measurements utilizing scanning electron microscopy. The conductivity type is found to affect significantly the oxidation rate, with p‐type samples oxidizing more rapidly than n‐type samples. Classical oxidation theory is employed to explain these phenomena which are related to the position of the Fermi level in the samples.
Show PACS
81.65.-b Surface treatments

Far infrared photoelectric thresholds of extrinsic semiconductor photocathodes

A. G. U. Perera, R. E. Sherriff, M. H. Francombe, and R. P. Devaty

Appl. Phys. Lett. 60, 3168 (1992); http://dx.doi.org/10.1063/1.106731 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
Far infrared detection is demonstrated in forward biased Ge (out to 240 μm), Si (220 μm), and InGaAs (90 μm) p‐i‐n diodes with D up to 5×1010 cm Hz1/2/W at 4.2 K. For silicon detectors, this is the longest response wavelength ever reported. Estimates for the responsivity and the detectivity for unoptimized commercial samples are provided by comparison with a silicon composite bolometer. The variations observed in the long wavelength threshold (λt) suggest that if correlations with device processing parameters can be successfully established, this approach can be used to tailor detectors for different IR wavelength regions. Spectral response comparison with a single p‐i structure strongly supports the detection mechanism and opens the possibility of detector optimization using multilayered structures.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
72.40.+w Photoconduction and photovoltaic effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Pressure dependence of energy gap for Cd0.7Hg0.3Te

S. Jiang, S. C. Shen, D. Li, Y. Q. Ju, Haorong Zhu, and J. Schilz

Appl. Phys. Lett. 60, 3171 (1992); http://dx.doi.org/10.1063/1.106732 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
The absorption edge of CdxHg1−xTe with x=0.7 has been measured in the range of 0–36 kbar. A least‐square fitting to the experimental data gives a pressure coefficient of a=8.7×10−3 eV/kbar, which is in good agreement with the result of dielectric theory of chemical bond. The second‐order pressure coefficient of the energy gap is also obtained experimentally to be b=−6.3×10−5 eV/kbar2, which is anomalously large and difficult to understand. In addition, a structural phase transition has been observed under 34–36 kbar.
Show PACS
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.30.Fs III-V and II-VI semiconductors
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

High quantum efficiency photoluminescence from localized excitons in Si1−xGex

L. C. Lenchyshyn, M. L. W. Thewalt, J. C. Sturm, P. V. Schwartz, E. J. Prinz, N. L. Rowell, J.‐P. Noël, and D. C. Houghton

Appl. Phys. Lett. 60, 3174 (1992); http://dx.doi.org/10.1063/1.106733 (3 pages) | Cited 43 times

Full Text: | Download PDF

Show Abstract
We report a new photoluminescence process in epitaxial Si1−xGex layers grown on Si by rapid thermal chemical vapor deposition which we attribute to the recombination of excitons localized at random alloy fluctuations. This luminescence is characterized by saturation at very low excitation densities (≂100 μW cm−2), very long decay times (≳1 ms), and high quantum efficiency at low excitation. We have directly measured an external photoluminescence quantum efficiency of 11.5±2%.
Show PACS
78.55.Hx Other solid inorganic materials
78.66.-w Optical properties of specific thin films
71.35.-y Excitons and related phenomena

Room‐temperature 1.3 μm electroluminescence from strained Si1−xGex/Si quantum wells

Q. Mi, X. Xiao, J. C. Sturm, L. C. Lenchyshyn, and M. L. W. Thewalt

Appl. Phys. Lett. 60, 3177 (1992); http://dx.doi.org/10.1063/1.106734 (3 pages) | Cited 34 times

Full Text: | Download PDF

Show Abstract
We report the first room‐temperature 1.3 μm electroluminescence from strained Si1−xGex/Si quantum wells. The electroluminescence is due to band‐edge carrier recombination, and its intensity increases linearly with the forward current up to 1700 A/cm2. The internal quantum efficiency is estimated to have a lower limit of 2×10−4. As the temperature is increased from 77 to 300 K, luminescence from the silicon increases relative to that from the Si1−xGex wells. A minimum band offset is required to have effective room‐temperature luminescence from the Si1−xGex quantum wells.
Show PACS
78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices

Reproducible growth of high quality YBa2Cu3O7−x film on (100) MgO with a SrTiO3 buffer layer by pulsed laser deposition

Jeffrey T. Cheung, Isoris Gergis, M. James, and Roger E. DeWames

Appl. Phys. Lett. 60, 3180 (1992); http://dx.doi.org/10.1063/1.106735 (3 pages) | Cited 23 times

Full Text: | Download PDF

Show Abstract
Epitaxial YBa2Cu3O7−x(YBCO) films were grown on SrTiO3‐buffered (100) MgO substrates by pulsed laser deposition. The SrTiO3 layer of about 500 Å thick serves a dual purpose to provide a better lattice match to the YBCO films as well as a diffusion barrier to prevent interaction between YBCO and MgO. These YBCO films exhibit excellent structural, electrical, and microwave properties with Tc≳89 K and Tc=2.9×106 A/cm2 at 77 K (1×106A/cm2 at 84 K). X‐ray pole figure measurements showed that over 99.92% of the volume fraction of the c‐axis oriented film has the a‐b axis aligned parallel to the [010] and [001] direction of the substrate.
Show PACS
74.70.-b Superconducting materials other than cuprates
68.55.-a Thin film structure and morphology
74.78.-w Superconducting films and low-dimensional structures

Composite reaction texturing of superconducting ceramic composites

B. Soylu, N. Adamopoulos, D. M. Glowacka, and J. E. Evetts

Appl. Phys. Lett. 60, 3183 (1992); http://dx.doi.org/10.1063/1.106736 (3 pages) | Cited 22 times

Full Text: | Download PDF

Show Abstract
Textured composite Bi2Sr2Ca1Cu2O8+a (2212) conductors have been fabricated by a novel method termed composite reaction texturing (CRT) that makes use of inert whiskers or fibers to align superconducting grains and control their morphology. The process has two stages, the initial alignment of fibre material in a precursor followed by a composite reaction stage to develop a textured microstructure. In this work, disk‐shaped pellets with whisker alignment in the pellet plane were reacted to produce CRT material with a transport critical‐current density in excess of 4×103 A cm−2 at 77 K (B=0). At 4.5 K, the critical‐current density was ∼105 A cm−2 in zero field and 2.104 A cm−2 at 12 T. The method clearly has promise for the production by a wind‐and‐react technique of high critical‐current conductors with large cross sections.
Show PACS
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
74.70.-b Superconducting materials other than cuprates
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Synthesis of SmCo5 by chemical reduction during mechanical alloying

Yinong Liu, M. P. Dallimore, P. G. McCormick, and T. Alonso

Appl. Phys. Lett. 60, 3186 (1992); http://dx.doi.org/10.1063/1.106737 (2 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
The synthesis of SmCo5 by the chemical reduction of Sm2O3 during mechanical alloying has been investigated using x‐ray diffraction, electron microscopy, and magnetic measurements. The mechanical alloying of Sm2O3 with Co and Ca resulted in the formation of CaO and an amorphous Sm‐Co phase. The SmCo5 phase formed during subsequent heat treatment exhibited coercivity greater than 33 kOe.
Show PACS
81.20.-n Methods of materials synthesis and materials processing
75.50.Cc Other ferromagnetic metals and alloys

Micromachined vertical hall magnetic field sensor in standard complementary metal oxide semiconductor technology

M. Paranjape and Lj. Ristic

Appl. Phys. Lett. 60, 3188 (1992); http://dx.doi.org/10.1063/1.106738 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
A novel vertical Hall magnetic field sensor which incorporates two important microsensor features is presented. First, the device is fabricated using a standard complementary metal oxide semiconductor (or CMOS) process and therefore possesses all characteristics inherent with integrated circuit manufacturing. Second, the magnetic field sensor is subjected to a post‐processing step which involves CMOS‐compatible micromachining techniques. This combination of micromachining and CMOS processing led to the superior results for a micromachined sensor when compared with a non‐micromachined magnetic field sensor.
Show PACS
85.70.-w Magnetic devices
85.30.-z Semiconductor devices
81.65.-b Surface treatments
72.20.My Galvanomagnetic and other magnetotransport effects
Page 2 of 2 Pages Previous Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close