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27 Jan 1992

Volume 60, Issue 4, pp. 401-517

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Conduction‐band discontinuity in InGaP/GaAs measured using both current‐voltage and photoemission methods

T. W. Lee, P. A. Houston, R. Kumar, X. F. Yang, G. Hill, M. Hopkinson, and P. A. Claxton

Appl. Phys. Lett. 60, 474 (1992); http://dx.doi.org/10.1063/1.106639 (3 pages) | Cited 39 times

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Both current‐voltage and photoemission measurements of the conduction‐band discontinuity of the same InGaP/GaAs p‐n heterojunction have been carried out. Interpretation of the current‐voltage results using thermionic emission theory applied to a heterojunction bipolar transistor have resulted in a conduction‐band offset value of 0.21 eV in the case of a compositionally abrupt junction. This figure has been confirmed by performing independent photoemission measurements on the same junction.  
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85.30.Pq Bipolar transistors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Luminescence characteristics of quantum wires grown by organometallic chemical vapor deposition on nonplanar substrates

E. Kapon, K. Kash, E. M. Clausen, D. M. Hwang, and E. Colas

Appl. Phys. Lett. 60, 477 (1992); http://dx.doi.org/10.1063/1.106641 (3 pages) | Cited 37 times

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Luminescence properties of GaAs/AlGaAs quantum wire (QWR) heterostructures grown by organometallic chemical vapor deposition on V‐grooved substrates are reported. A model of the crescent‐shaped wires yields parabolic QWR potential wells with subbands separated by 21.7, 3.9, and 16.7 meV for electrons, heavy holes, and light holes and effective width of 16 nm for the ground electron state. Spectrally and spatially resolved cathodoluminescence images reveal highly uniform emission from the QWR regions. Photoluminescence excitation spectra exhibit enhanced absorption at the QWR subbands, with subband separations in good agreement with the model.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors

Metal‐intrinsic semiconductor‐semiconductor structures using polycrystalline diamond films

K. Miyata, D. L. Dreifus, and K. Kobashi

Appl. Phys. Lett. 60, 480 (1992); http://dx.doi.org/10.1063/1.106642 (3 pages) | Cited 18 times

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The electrical characteristics of a metal‐intrinsic semiconductor‐semiconductor structure formed by Al‐undoped polycrystalline diamond‐B‐doped polycrystalline diamond were investigated. Boron‐doped diamond films containing B‐to‐C ratios of 400 and 4000 ppm in gas phase were deposited on (111)‐oriented B‐doped Si substrates. Subsequently, undoped diamond layers were deposited on the B‐doped diamond films for 60 min. The existence of a bilayer structure in terms of the atomic B concentration was confirmed by a secondary‐ion mass spectroscopy. Significant improvements in the rectifying characteristics could be obtained with the introduction of an undoped diamond layer.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Tv Field effect devices

Fully planar method for creating adjacent ‘‘self‐isolating’’ silicon‐on‐insulator and epitaxial layers by epitaxial lateral overgrowth

J. L. Glenn, G. W. Neudeck, C. K. Subramanian, and J. P. Denton

Appl. Phys. Lett. 60, 483 (1992); http://dx.doi.org/10.1063/1.106643 (3 pages) | Cited 7 times

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A novel and simple process is demonstrated for creating isolated silicon‐on‐insulator (SOI) tubs adjacent to selective epitaxial substrate layers. The process results in a fully planar wafer surface which is uniquely suited for mixed bipolar/complementary metal‐oxide‐semiconductor device fabrication. Low‐temperature epitaxial lateral overgrowth (ELO) using SiH2Cl2/HCl/H2 is carried out in a reduced‐pressure chemical vapor deposition reactor to create SOI islands in thermally grown SiO2 valleys. SOI islands and epitaxial seed regions are ‘‘self‐isolated’’ by chemical‐mechanical planarization. The as‐grown ELO is single‐crystal material with well‐defined facets. Planarized SOI and epilayer regions have planar, featureless surfaces. Defect etching for the nonoptimized SOI layers indicates about 5×104 stacking faults/cm2.
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85.40.Hp Lithography, masks and pattern transfer
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Laser‐induced etching of silicon in hydrofluoric acid

P. Lim, J. R. Brock, and I. Trachtenberg

Appl. Phys. Lett. 60, 486 (1992); http://dx.doi.org/10.1063/1.106644 (3 pages) | Cited 4 times

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Laser‐assisted wet etching (LAWE) of n‐silicon using a 514.5‐nm line from a cw argon‐ion laser in the presence of hydrofluoric acid is reported. The effects of laser fluence, doping level, and acid concentration on the etch rate are investigated. By LAWE, vias and lines can be rapidly etched with smooth profiles under conditions described.
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85.40.Hp Lithography, masks and pattern transfer
81.65.-b Surface treatments
82.50.-m Photochemistry

Heavily Si‐doped GaAs grown by low‐pressure metalorganic chemical vapor deposition using tertiarybutylarsine and silane

S. Chichibu, A. Iwai, S. Matsumoto, and H. Higuchi

Appl. Phys. Lett. 60, 489 (1992); http://dx.doi.org/10.1063/1.106645 (3 pages) | Cited 9 times

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See Also: Erratum

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Heavy Si doping was studied for low‐pressure metalorganic chemical vapor deposition of GaAs by using tertiarybutylarsine (tBAs) as a group‐V source and silane (SiH4) as a doping source gas. The Si doping efficiency was higher by one order of magnitude when tBAs was used instead of arsine (AsH3). The maximum electron concentration was 9.0×1018 cm−3, which is slightly higher than that obtained for AsH3 (5.9×1018 cm−3). The slight increase of the maximum concentration is considered to be due to a reduction of the carrier compensating center generated in high SiH4 partial pressure conditions. Generation of the electrical compensating center is assigned to be related with the carbon incorporation from alkylsilanes during growth.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Effect of fluorine‐ion implantation on buried nitride silicon‐on‐insulator structures

G. S. Virdi, C. M. S. Rauthan, B. C. Pathak, and W. S. Khokle

Appl. Phys. Lett. 60, 492 (1992); http://dx.doi.org/10.1063/1.106646 (3 pages) | Cited 1 time

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Effect of fluorine‐ion (19F+) implantation on the buried silicon nitride silicon‐on‐insulator (SOI) structures was investigated. Fluorine was introduced before and after the synthesis of buried Si3N4 layers in silicon by high‐dose nitrogen ion (14N+) implantation. Infrared transmission spectropscopy and glancing angle x‐ray diffraction studies show that 19F+ implantation before SOI synthesis inhibits the growth of larger‐size polycrystalline Si3N4 grains, whereas after the synthesis it removes undesired polycrystalline silicon and helps to obtain larger‐grain‐size α‐polycrystalline silicon nitride in few preferred planes.  
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61.72.uf Ge and Si
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
85.40.Hp Lithography, masks and pattern transfer

Enhancement in critical current density of Bi‐Pb‐Sr‐Ca‐Cu‐O tapes by thermomechanical processing: Cold rolling versus uniaxial pressing

P. Haldar, J. G. Hoehn, J. A. Rice, and L. R. Motowidlo

Appl. Phys. Lett. 60, 495 (1992); http://dx.doi.org/10.1063/1.106647 (3 pages) | Cited 33 times

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Critical current densities up to 24 000 A/cm2 (Ic∼23.6 A) at 77 K, zero field, have been measured in short tape samples of silver‐sheathed Bi‐Pb‐Sr‐Ca‐Cu‐O superconductors made by the powder‐in‐tube technique. These samples carried 3000 A/cm2 at 1 T and 1000 A/cm2 at 2 T, also at liquid‐nitrogen temperature. A repeated cold work (rolling and pressing) together with an intermediate heat treatment were required to achieve these properties. Without the pressing, tapes were made with Jc’s as high as 15 000 A/cm2 at 77 K, zero field. The role of uniaxial pressing as compared to rolling is discussed and its implications to long length conductor fabrication described.
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84.71.Ba Superconducting magnets; magnetic levitation devices
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
74.70.-b Superconducting materials other than cuprates

Transmission electron microscopy study of Ag contacts to a‐ and c‐axis oriented YBa2Cu3O7 thin films

Z. H. Gong, R. Fagerberg, F. Vassenden, J. K. Grepstad, and R. Høier

Appl. Phys. Lett. 60, 498 (1992); http://dx.doi.org/10.1063/1.106612 (3 pages) | Cited 5 times

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The interface atomic structure of in situ sputter deposited silver contacts to a‐ and c‐axis oriented thin films of YBa2Cu3O7 (YBCO) was investigated with cross‐section transmission electron microscopy (TEM). A structurally disordered interface layer, approximately 25 Å thick, was found for Ag contacts to c‐axis oriented films. Electron diffraction analysis provides clear evidence for loss of the 11.7 Å lattice periodicity along the YBCO c‐axis in this zone. No such disordered interface layer could be identified in TEM images of Ag contacts to a‐axis oriented films. These findings may have important bearing on fabrication of high Tc proximity coupled superconductor/normal metal/superconductor Josephson devices.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.Dv Composition, segregation; defects and impurities
85.25.Cp Josephson devices

Giant voltages upon surface heating in normal YBa2Cu3O7−δ films suggesting an atomic layer thermopile

H. Lengfellner, G. Kremb, A. Schnellbögl, J. Betz, K. F. Renk, and W. Prettl

Appl. Phys. Lett. 60, 501 (1992); http://dx.doi.org/10.1063/1.106613 (3 pages) | Cited 59 times

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Experiments are reported which show that temperature gradients perpendicular to the surface of epitaxial normal conducting YBa2Cu3O7−δ films give rise to large transversal voltages between contacts on the film surface. The temperature gradients have been produced by pulsed laser irradiation and by continuous heating of the films by heater wires. To explain the large lateral voltages, an atomic layer thermopile is proposed, which may be formed by the layered structure of the material.
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74.70.-b Superconducting materials other than cuprates
72.20.Pa Thermoelectric and thermomagnetic effects
72.40.+w Photoconduction and photovoltaic effects

Superconducting electron focusing and guiding based on the Andreev reflection mechanism

Gang Xiao and Deng‐Ping Xue

Appl. Phys. Lett. 60, 504 (1992); http://dx.doi.org/10.1063/1.106618 (3 pages) | Cited 1 time

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Based on the principle of Andreev reflection, we suggest a novel normal‐metal‐superconductor composite structure capable of electron focusing and guiding. Such a structure may be used as a switching device. The resolution and performance of a model system have been evaluated numerically.
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85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices

Identifying the source of 1/f noise in SQUIDs made from high‐temperature superconductors

R. H. Koch, W. Eidelloth, B. Oh, R. P. Robertazzi, S. A. Andrek, and W. J. Gallagher

Appl. Phys. Lett. 60, 507 (1992); http://dx.doi.org/10.1063/1.106619 (3 pages) | Cited 27 times

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We compare model predictions for 1/f noise in dc SQUIDs with experimental data and show that the 1/f noise in the our devices results from fluctuations in the magnitude of the critical current of the Josephson junctions that form the SQUID. Operating the SQUID while the bias current direction was being alternated canceled the 1/f noise power from these fluctuations and reduced the output noise power by two orders of magnitude. Using this process, we have measured the 1/f noise in several SQUIDs to be 1×10−7 Φ02/Hz at 0.1 Hz and 77 K, the lowest value reported to date.  
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
74.70.-b Superconducting materials other than cuprates
74.40.-n Fluctuation phenomena

Magnetic properties of multiple‐structure multilayered Co/Pd films

Y. Maeno, H. Yamane, K. Sato, and M. Kobayashi

Appl. Phys. Lett. 60, 510 (1992); http://dx.doi.org/10.1063/1.106592 (2 pages) | Cited 3 times

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Co/Pt and Co/Pd multilayered films exhibit large perpendicular magnetic anisotropy and have attracted attention as new materials for magneto‐optical recording media and for applications in other areas. The coercivity and the squareness ratio of these films are small at thick films of 1000 Å or more. We studied Co/Pd multiple‐structure multilayered films, consisting of periodic piles of Co/Pd multilayered film layers and Pd thin‐film layers in order to improve the magnetic characteristics. By adopting such multiple structures, a squareness ratio of unity, coercivity of 2.5 kOe, and residual magnetization of 1.5 kG were obtained at a thick film of 2000 Å.
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75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
78.20.Ls Magneto-optical effects
85.70.Li Other magnetic recording and storage devices (including tapes, disks, and drums)

Oscillations in giant magnetoresistance and antiferromagnetic coupling in [Ni81Fe19/Cu]N multilayers

S. S. P. Parkin

Appl. Phys. Lett. 60, 512 (1992); http://dx.doi.org/10.1063/1.106593 (3 pages) | Cited 99 times

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We report giant magnetoresistance in [Ni81Fe19/Cu]N multilayers. Saturation magnetoresistance values exceeding 16% for saturation fields of only 600 Oe are found at 300 K. In addition, we show evidence for well‐defined oscillations in saturation magnetoresistance as a function of Cu spacer layer thickness at 4.2 K, with an oscillation period and phase similar to that in Co/Cu multilayers. However, the temperature dependence of the magnetoresistance, while weak for thin Cu layers, is much stronger for thicker Cu layers. Consequently at 300 K only a single oscillation in magnetoresistance for thin Cu layers is found. We show that the properties of the Ni81Fe19/Cu multilayers are very sensitive to annealing at moderate temperatures, which may limit the possible technological applications of such structures.
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72.15.Gd Galvanomagnetic and other magnetotransport effects
75.70.-i Magnetic properties of thin films, surfaces, and interfaces

Observation of deep contact holes and conductive components underlying insulator in a memory cell by tunneling acoustic microscopy

Keiji Takata, Tokuo Kure, and Takehiro Okawa

Appl. Phys. Lett. 60, 515 (1992); http://dx.doi.org/10.1063/1.106594 (3 pages) | Cited 4 times

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We have observed memory cells using tunneling acoustic microscopy (TAM). Ground‐connected conductive components underlying an insulator are visible with electrostatic force imaging of TAM. Simultaneously, the contours of the memory cells with contact holes ∼2‐μm‐deep and ∼0.3 μm in diameter at the bottom are clearly imaged with a commonly used tip.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
43.58.Ls Acoustical lenses and microscopes
68.35.B- Structure of clean surfaces (and surface reconstruction)
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
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