APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

10 Feb 1992

Volume 60, Issue 6, pp. 665-786

Page 1 of 2 Pages Next Page | Jump to Page

Coupling between barrier and quantum well energy states in a multiple quantum well optical amplifier

N. Tessler, R. Nagar, D. Abraham, G. Eisenstein, U. Koren, and G. Raybon

Appl. Phys. Lett. 60, 665 (1992); http://dx.doi.org/10.1063/1.106585 (3 pages) | Cited 21 times

Full Text: | Download PDF

Show Abstract
We describe the interaction between carriers in three‐dimensional barrier and confinement regions and two‐dimensional quantum well regions of a 1.5 μm multiple quantum well optical amplifier. We present a model and measurements of the spontaneous emission and gain spectra dependence on an external optical pump signal.  
Show PACS
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Resonant self‐aligned‐stripe antiguided diode laser array

L. J. Mawst, D. Botez, C. Zmudzinski, M. Jansen, C. Tu, T. J. Roth, and J. Yun

Appl. Phys. Lett. 60, 668 (1992); http://dx.doi.org/10.1063/1.106586 (3 pages) | Cited 17 times

Full Text: | Download PDF

Show Abstract
Resonant‐optical‐waveguide (ROW) arrays with a self‐aligned‐stripe (SAS) geometry have been realized for the first time. Resonance is achieved by holding the array element/interelement widths constant and varying the aluminum composition of the passive guide layer. External differential quantum efficiencies as high as 47% have been achieved from longitudinally uniform 20‐element 1000 μm‐long devices. Diffraction‐limited‐beam operation is obtained up to 13×threshold, and 2.1 W output power level from devices with Talbot‐type spatial filters. The front‐facet emitted coherent uniphase power is 1.6 W, with 1.15 W in the central lobe.
Show PACS
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Gn Optical waveguides and couplers

Undepleted pump regime of Hill grating formation in optical fibers

Baiming Guo and Dana Z. Anderson

Appl. Phys. Lett. 60, 671 (1992); http://dx.doi.org/10.1063/1.106587 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
A bleaching model describing the dynamics of Hill grating formation in optical fibers, [K.O. Hill, Y. Fujii, D. C. Johnson, and B. S. Kawasaki, Appl. Phys. Lett. 32, 647 (1978)], is analytically solved in an undepleted pump approximation. This regime provides quantitative predictions about grating dynamics in the early stages of grating growth. A series of experiments in which heating effects and surface reflections from the input end of the fiber have been eliminated show quantitative agreement with the theory to 2%.
Show PACS
42.81.Cn Fiber testing and measurement of fiber parameters

Submicron periodic structures produced on polymer surfaces with polarized excimer laser ultraviolet radiation

Matthias Bolle, Sylvain Lazare, Monique Le Blanc, and Aloyse Wilmes

Appl. Phys. Lett. 60, 674 (1992); http://dx.doi.org/10.1063/1.106588 (3 pages) | Cited 33 times

Full Text: | Download PDF

Show Abstract
For the first time, pure laser induced periodic structures (without any ablation or any larger structure) of submicron size (spacing and amplitude of 0.2 μm) are developed on polymer surfaces [poly(ethylene terephthalate), poly(butylene terephthalate) and polystyrene] by irradiation with one thousand pulses of the polarized beam of the excimer laser (193 and 248 nm). Fluence is below the ablation threshold and must be chosen in a narrow window which depends on the polymer and the wavelength. The obtained relief is observed by SEM, TEM and characterized by ellipsometry. Structures are obtained also by irradiation of thin films (2000 Å) coated on silicon wafers.
Show PACS
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.66.Qn Polymers; organic compounds
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Mode‐locked GaAs vertical cavity surface emitting lasers

W. B. Jiang, R. Mirin, and J. E. Bowers

Appl. Phys. Lett. 60, 677 (1992); http://dx.doi.org/10.1063/1.106562 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
The first mode‐locked GaAs vertical cavity surface emitting laser is reported. Pulses of 324 fs pulsewidth with 64 W peak power were generated by compressing the output from the mode‐locked laser.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.55.Rz Doped-insulator lasers and other solid state lasers

Local mirror temperatures of red‐emitting (Al)GaInP quantum‐well laser diodes by Raman scattering and reflectance modulation measurements

P. W. Epperlein, G. L. Bona, and P. Roentgen

Appl. Phys. Lett. 60, 680 (1992); http://dx.doi.org/10.1063/1.106563 (3 pages) | Cited 24 times

Full Text: | Download PDF

Show Abstract
Temperature rises were measured on cleaved, uncoated mirror facets of junction‐side‐up mounted (Al)GaInP laser diodes as a function of the injection current by Raman spectroscopy via the Stokes/anti‐Stokes phonon line intensity ratio and the phonon line shift as well as by reflectance modulation as a novel application for laser mirror characterization. Below the threshold current the temperature rise is due to Joule heating of the drive current across the ohmic resistor and is ΔT≂35 K at threshold. Above threshold a significant power‐dependent heating caused by absorption of laser radiation is superimposed. In this regime the temperature increase is considerably high, i.e., ΔT≥100 K at 4 mW for 5‐μm‐wide ridge lasers. The different measurement techniques have produced consistent data.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
78.30.Fs III-V and II-VI semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects

Temperature dependence of GaAs‐AlGaAs vertical cavity surface emitting lasers

B. Tell, K. F. Brown‐Goebeler, R. E. Leibenguth, F. M. Baez, and Y. H. Lee

Appl. Phys. Lett. 60, 683 (1992); http://dx.doi.org/10.1063/1.106536 (3 pages) | Cited 47 times

Full Text: | Download PDF

Show Abstract
The temperature performance of GaAs‐AlGaAs vertical cavity surface emitting lasers has been studied from 60 to −160 °C. A minimum threshold current occurs considerably below room‐temperature where the wavelength of the Fabry–Perot resonance of the cavity matches the wavelength of the maximum gain of the active region. The laser quantum efficiency increases for decreasing temperature, exhibiting a change of slope near the temperature of the threshold minimum.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
85.60.Jb Light-emitting devices

InAs/GaAs short‐period strained‐layer superlattices grown on GaAs as quantum confined Stark effect modulators

Michael Jupina, Elsa Garmire, Tom C. Hasenberg, and Alan Kost

Appl. Phys. Lett. 60, 686 (1992); http://dx.doi.org/10.1063/1.106537 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
We report here the first use of InAs/GaAs short‐period strained‐layer superlattices as Stark effect modulators. We have observed differential transmission changes as large as 38% with a corresponding change in quantum‐well absorption of 0.28 μm−1 at an applied field of 43 kV/cm. The Kramers–Kronig relation predicts a maximum change in the quantum‐well index of refraction of 0.019 for a field of 43 kV/cm. There is a unique light‐hole feature in the absorption and electroabsorption spectra that is attributed to resonant tunneling in the presence of high internal strain in the InAs layers.
Show PACS
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.20.Jq Electro-optical effects

Surface‐emitting lasers with optical cavity along the [111] direction

S. S. Ou, J. J. Yang, and M. Jansen

Appl. Phys. Lett. 60, 689 (1992); http://dx.doi.org/10.1063/1.106538 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
Monolithic horizontal cavity GaAs/GaAlAs surface‐emitting lasers with cavities along the [111] direction have been demonstrated for the first time. The vertical facet of the devices was fabricated by reactive‐ion etching and the 45° outcoupler micromirror was fabricated by ion‐beam etching. Typical uncoated devices have threshold current densities of 330 A/cm2, which is the lowest ever reported for GaAs/GaAlAs surface‐emitting lasers. The coated devices have external differential quantum efficiencies as high as 40% (0.6 W/A), and output powers (pulsed) in excess of 3 W. The output power is the highest ever reported from GaAs/GaAlAs horizontal cavity surface‐emitting lasers with dry‐etched outcoupler micromirrors.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.30.De Semiconductor-device characterization, design, and modeling
81.40.Tv Optical and dielectric properties related to treatment conditions

Real‐time characterization of acoustic modes of polyimide thin‐film coatings using impulsive stimulated thermal scattering

Anil R. Duggal, John A. Rogers, Keith A. Nelson, and Mordechai Rothschild

Appl. Phys. Lett. 60, 692 (1992); http://dx.doi.org/10.1063/1.106539 (3 pages) | Cited 19 times

Full Text: | Download PDF

Show Abstract
A method for real‐time optical characterization of thin‐film acoustic modes is demonstrated. Pseudo‐Rayleigh acoustic waves of thin (∼1 μm) polyimide films attached to silicon substrates are optically excited and monitored in real time as they propagate. The results can be used to determine mechanical properties (elastic moduli) and to guide thin‐film fabrication and curing procedures.
Show PACS
74.78.-w Superconducting films and low-dimensional structures
81.15.Cd Deposition by sputtering
74.25.N- Response to electromagnetic fields

Effect of helium dilution during plasma‐enhanced deposition on electron trapping in silicon dioxide thin films

Y. C. Park, N. M. Johnson, W. B. Jackson, K. S. Stevens, D. L. Smith, and S. B. Hagstrom

Appl. Phys. Lett. 60, 695 (1992); http://dx.doi.org/10.1063/1.106540 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
The effect of helium dilution during plasma‐enhanced chemical vapor deposition (PECVD) of silicon dioxide thin films was studied with avalanche injection and charge trapping techniques. It is shown that, while oxides deposited with He dilution can have low bulk trap densities, they are not lower than films deposited without He dilution. We thus present a more complete specification than previously available of the range of gas‐phase deposition conditions that produce device‐grade silicon dioxide.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Textured diamond growth on (100) β‐SiC via microwave plasma chemical vapor deposition

B. R. Stoner and J. T. Glass

Appl. Phys. Lett. 60, 698 (1992); http://dx.doi.org/10.1063/1.106541 (3 pages) | Cited 240 times

Full Text: | Download PDF

Show Abstract
Textured diamond films have been deposited on β‐SiC via microwave plasma chemical vapor deposition preceded by an in situ bias pretreatment that enhances nucleation. Approximately 50% of the initial diamond nuclei appear to be aligned with the C(001) planes parallel to the SiC(001), and C[110] directions parallel to the SiC[110] within 3°. The diamond was characterized by Raman spectroscopy and scanning electron microscopy.
Show PACS
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.10.Bk Growth from vapor
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Boron diffusion in Co74Ti26 amorphous alloy

F. La Via, K. T. F. Janssen, and A. H. Reader

Appl. Phys. Lett. 60, 701 (1992); http://dx.doi.org/10.1063/1.106542 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
Boron diffusion in implanted Co74Ti26 amorphous alloy has been studied by secondary ion mass spectrometry (SIMS). Auger electron spectroscopy depth profiling, Rutherford backscattering spectroscopy, and x‐ray diffraction have been used to control the crystallization and the interaction with the Si substrate. By comparing computer simulations with the SIMS profiles, the diffusion coefficients of B in Co74Ti26 have been found in the temperature range between 300 and 400 °C. An activation energy of 1.63±0.05 eV and a preexponential factor of 1.77×10−3 cm2/s for the diffusion equation have been found. These values agree with an experimental correlation that appears to be valid for the diffusion in amorphous alloys of all elements with the exception of hydrogen.
Show PACS
66.30.J- Diffusion of impurities
61.43.Fs Glasses
61.43.-j Disordered solids
61.44.Br Quasicrystals
68.35.Fx Diffusion; interface formation
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Physical criteria for the direct‐to‐indirect gap crossover in AlxGa1−xAs alloys

R. B. Capaz, J. P. von der Weid, and Belita Koiller

Appl. Phys. Lett. 60, 704 (1992); http://dx.doi.org/10.1063/1.106543 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
AlxGa1−xAs alloys undergo a direct‐to‐indirect gap transition when the Al concentration x is increased, or when hydrostatic pressure P is applied to a direct‐gap sample of fixed composition. It is usually assumed that either hydrostatic pressure or alloying produce a Γ–X conduction band crossing responsible for the change in the nature of the gap. A critical discussion regarding this widely adopted criterion for the direct‐to‐indirect gap transition is presented. Alloying and pressure effects in the electronic properties of AlxGa1−xAs are determined through the small crystal approach with a 64‐site basic cluster. Finite‐size effects are discussed. The photoluminescence emission intensity is calculated as a function of x and P, and physically reliable criteria for the transition from the direct‐to‐indirect gap regimes based on these results are proposed. A critical concentration consistent with experimental results associated to this change of regime is obtained from our data.
Show PACS
78.20.Bh Theory, models, and numerical simulation
71.55.Eq III-V semiconductors
42.70.Gi Light-sensitive materials

Effects of hydrogen and deposition pressure on Si1−xGex growth rate

Syun‐Ming Jang and Rafael Reif

Appl. Phys. Lett. 60, 707 (1992); http://dx.doi.org/10.1063/1.106544 (3 pages) | Cited 25 times

Full Text: | Download PDF

Show Abstract
Si1−xGex films were deposited at 620 °C by very low pressure chemical vapor deposition. The effects of H2 dilution and deposition pressure on Si1−xGex growth rate were examined. Under the conditions employed here, both H2 dilution and deposition pressure were found to affect the growth rate and its peak as a function of Ge incorporation in the film. The suppression of Si1−xGex growth rate from H2 at low Ge contents was observed. The growth rate enhancement by increasing deposition pressure is dependent on Ge content and becomes more significant as Ge increases. The implications of these observations for Si1−xGex growth rate are discussed.
Show PACS
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Electric‐field effect on the minigap state in semiconductor superlattices

F. Y. Huang and H. Morkoç

Appl. Phys. Lett. 60, 710 (1992); http://dx.doi.org/10.1063/1.106545 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
Electric‐field effect on the confined minigap states in coupled semiconductor superlattices is studied theoretically. Due to the perturbation of periodicity in the superlattice by an applied field, delocalization of the confined states is observed. In the weak field regime, delocalization of the minigap states is similar to the quantum confined Stark effect in single quantum wells. In the strong field regime, confined states disappear, and additional states from the original superlattice miniband are introduced to form semibound states due to the mixing of localized Stark ladders with the gap mode. Our numerical simulation will have an impact on confirmation of the proposed confined states in experimental observations. Possible device applications are discussed.
Show PACS
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
71.20.-b Electron density of states and band structure of crystalline solids
85.30.Tv Field effect devices

Improvement of peak‐to‐valley ratio by the incorporation of the InAs layer into the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure

M. P. Houng, Y. H. Wang, C. L. Shen, J. F. Chen, and A. Y. Cho

Appl. Phys. Lett. 60, 713 (1992); http://dx.doi.org/10.1063/1.106546 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
InAs blocking layer is incorporated into the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure to improve the peak‐to‐valley ratios. It is found the ratio rises to 21 at room temperature and the peak current density keeps nearly constant for InAs layer reaches 30 A and then both of them decreases with the increase of InAs thickness. However, while the InAs blocking layer further increases to 240 A, the I‐V characteristic shows multiple negative differential resistance behavior. These interesting phenomena can be modeled to be due to the coupling effect of InAs blocking layer and GaSb well layer.
Show PACS
73.40.Gk Tunneling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Hydrogen sulfide plasma passivation of gallium arsenide

J. S. Herman and F. L. Terry

Appl. Phys. Lett. 60, 716 (1992); http://dx.doi.org/10.1063/1.106547 (2 pages) | Cited 21 times

Full Text: | Download PDF

Show Abstract
Improvement in the electrical properties of the GaAs surface has been accomplished using a room‐temperature hydrogen sulfide plasma. The surface has then been protected by a 300 °C plasma enhanced chemical vapor deposition (PECVD) SiO2 film. This treatment is highly reproducible due to computer control of process parameters and long‐lasting due to the SiO2 cap. Improved C‐V characteristics were observed, showing interface trap densities in the high 1011 cm−2 eV−1 range. Photoluminescence (PL) measurements on the sulfided samples showed increased intensity over the untreated samples.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators

Optically detected electron paramagnetic resonance of arsenic antisites in low‐temperature GaAs layers

H.‐J. Sun, G. D. Watkins, F. C. Rong, L. Fotiadis, and E. H. Poindexter

Appl. Phys. Lett. 60, 718 (1992); http://dx.doi.org/10.1063/1.106548 (3 pages) | Cited 18 times

Full Text: | Download PDF

Show Abstract
Arsenic antisites in GaAs layers grown by molecular‐beam epitaxy at low substrate temperatures (∼200 °C) were observed using electron paramagnetic resonance (EPR), magnetic circular dichroism in absorption (MCDA), and MCDA‐detected EPR. This observation confirms that there is a MCDA band directly associated with arsenic antisites in the GaAs layers.
Show PACS
71.55.Eq III-V semiconductors
76.70.Hb Optically detected magnetic resonance (ODMR)
76.30.Lh Other ions and impurities

Growth of Si/GaAs superlattices by molecular beam epitaxy

H. J. Gillespie, G. E. Crook, and R. J. Matyi

Appl. Phys. Lett. 60, 721 (1992); http://dx.doi.org/10.1063/1.107437 (3 pages) | Cited 12 times

Full Text: | Download PDF

Show Abstract
The growth and characterization of a ten period silicon/GaAs superlattice by molecular beam epitaxy is described. Reflection high energy electron diffraction of the surface reconstruction during growth of the GaAs layers showed the (4×2)→(3×2) →(3×1)→(2×4) sequence reported previously for GaAs grown on pseudomorphic silicon, although the intermediate stages were much more persistent than previously reported. X‐ray diffraction revealed satellite peaks clearly visible out to the fourth order, indicating a high degree of structural perfection. Comparison of the experimental diffraction profile and that obtained using a dynamical diffraction simulation yielded average layer thicknesses of 440 and 2.7 Å for the GaAs and silicon layers, respectively. Excellent agreement between the experimental and the simulated profiles was observed.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.

In situ doping of GedxSi1−x with arsenic by rapid thermal processing chemical vapor deposition

K. H. Jung, T. Y. Hsieh, D. L. Kwong, H. Y. Liu, and R. Brennan

Appl. Phys. Lett. 60, 724 (1992); http://dx.doi.org/10.1063/1.106549 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
We report the growth of GexSi1−x epitaxial layers in situ doped with arsenic by rapid thermal processing chemical vapor deposition at 800 and 900 °C. Films were grown with activated doping levels of up to 2×1019 cm−3 and dopant transition widths (1019–1015 cm−3) of better than 350 Å. Doping was observed to reduce growth rates and significantly improve film quality. Defect densities of the order of 103 cm−2 were achieved with normalized film strains of up to 99%.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.30.Er Solid metals and alloys
78.40.Kc Metals, semimetals, and alloys
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Pseudomorphic InGaAs‐GaAsP quantum well modulators on GaAs

J. E. Cunningham, K. W. Goossen, M. Williams, and W. Y. Jan

Appl. Phys. Lett. 60, 727 (1992); http://dx.doi.org/10.1063/1.106550 (3 pages) | Cited 23 times

Full Text: | Download PDF

Show Abstract
Previous strain‐relief p‐i‐n InGaAs‐GaAs quantum well (qw) modulators have incurred surface striations upon growth due to defect formation, resulting in an optically rough surface. We present here a qw modulator on a GaAs substrate with InGaAs wells and GaAsP barriers which balance the strain in the wells so that the lattice does not relax, leading to much fewer defects, and an optically smooth surface. We obtain a transmission change from 60% to 80% at 1014 nm for a sample with a 1 μm thick intrinsic region.
Show PACS
42.79.Hp Optical processors, correlators, and modulators
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Time‐dependent positive charge generation in very thin silicon oxide dielectrics

K. R. Farmer, M. O. Andersson, and O. Engström

Appl. Phys. Lett. 60, 730 (1992); http://dx.doi.org/10.1063/1.106551 (3 pages) | Cited 25 times

Full Text: | Download PDF

Show Abstract
We have studied the rate at which positive charge is generated starting near the oxide‐silicon interface when electrons are injected from the gate through the very thin oxide layer in metal‐oxide‐(p)silicon tunnel diodes. By varying the oxide thickness, we find that the charging rate is not strongly controlled by the flux of tunneling electrons over a five order of magnitude range in current density. This implies that if the tunneling electrons do participate, then the charge generation in these oxides is at least a two‐step process. A comparison of charge generation in aluminum and polycrystalline silicon gate devices suggests that the process does not involve aluminum‐related defects. Measurements of the charging rate versus temperature, T, show that it is weakly dependent on T below 150–200 K and apparently thermally activated above this temperature range.
Show PACS
73.20.At Surface states, band structure, electron density of states
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.50.Fq High-field and nonlinear effects
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Measurement of the conduction‐band discontinuity in pseudomorphic InxGa1−xAs/In0.52Al0.48As heterostructures

J.‐H. Huang, T. Y. Chang, and B. Lalevic

Appl. Phys. Lett. 60, 733 (1992); http://dx.doi.org/10.1063/1.106552 (3 pages) | Cited 15 times

Full Text: | Download PDF

Show Abstract
Compositional dependence of the conduction‐band discontinuity ΔEc in InxGa1−xAs/In0.52Al0.48As pseudomorphic heterostructures has been measured as a function of InAs mole fraction over the range of 0.44≤x≤0.64 using both current‐versus‐voltage‐versus‐temperature and capacitance‐versus‐voltage measurements on semiconductor‐insulator‐semiconductor structures. The results show a monotonic increase of effective ΔEc with InAs mole fraction x according to ΔEc≊0.384+0.254x for x≤0.54 and an abrupt shift to ΔEc≊0.344+0.487x for x≥0.58. The effects of the conduction‐band nonparabolicity and the lattice strain on the Fermi potential have been taken into account in deducing ΔEc from the measured barrier height across the InxGa1−xAs/In0.52Al0.48As heterojunction.
Show PACS
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Ey III-V semiconductors

Bound exciton luminescence in ZnSe under hydrostatic pressure

W. Shan, J. M. Hays, X. H. Yang, J. J. Song, E. Cantwell, and J. Aldridge

Appl. Phys. Lett. 60, 736 (1992); http://dx.doi.org/10.1063/1.106553 (3 pages) | Cited 13 times

Full Text: | Download PDF

Show Abstract
We report pressure‐dependent photoluminescence (PL) measurements on ZnSe single crystals grown by the seeded physical vapor phase transport technique. Two kinds of ZnSe samples, the as‐grown and Zn‐extracted single crystals were used in this study. The Id1 line is the predominant spectral feature for the as‐grown samples and shifts with pressure at a rate of 7.3 meV/kbar. The I3 emission dominates the PL spectra of the Zn‐extracted samples and has a pressure coefficient of 6.6 meV/kbar, which is inconsistent with the assumption of the I3 line originating from the recombination of the excitons bound to ionized donors.
Show PACS
71.35.-y Excitons and related phenomena
71.55.Gs II-VI semiconductors
78.55.Et II-VI semiconductors
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close