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17 Feb 1992

Volume 60, Issue 7, pp. 793-914

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Enhanced two‐wave mixing in a photorefractive waveguide having a periodically reversed c‐axis by electrical poling technique

Fumihiko Ito, Ken‐ichi Kitayama, and Osamu Nakao

Appl. Phys. Lett. 60, 793 (1992); http://dx.doi.org/10.1063/1.106520 (3 pages) | Cited 1 time

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Propagation angle sensitivity of two‐wave mixing is observed in a photorefractive BaTiO3 waveguide having a periodically reversed c‐axis. The periodic reversal of the c‐axis is realized for the first time by adopting an electrical poling technique in which the polarization of the applied electric field is cyclically reversed along the waveguide axis.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
77.80.Dj Domain structure; hysteresis
42.40.Ht Hologram recording and readout methods

Four‐dimensional simulation of ultrashort optical shock radiation generated by guided‐wave frequency doubling of a pulsed laser diode

K. Hayata and M. Koshiba

Appl. Phys. Lett. 60, 796 (1992); http://dx.doi.org/10.1063/1.106521 (3 pages) | Cited 3 times

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Using a guided‐wave nonlinear‐pulse simulator, we implement a spatiotemporal‐domain calculation of the short‐wavelength Cerenkov‐shock radiation generated by frequency doubling of an ultrashort light pulse from a laser diode. Computed results for picosecond and subpicosecond blue pulse generations through the frequency doubling in a proton‐exchanged MgO:LiNbO3 channel waveguide are shown. Effects due to polarization, temporal walk‐off, and pump depletion are predicted.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Cascadable optical switching characteristics in vertical‐to‐surface transmission electrophotonic devices operated as vertical cavity lasers

Ichiro Ogura, Hideo Kosaka, Takahiro Numai, Mitsunori Sugimoto, and Kenichi Kasahara

Appl. Phys. Lett. 60, 799 (1992); http://dx.doi.org/10.1063/1.106522 (3 pages) | Cited 3 times

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We examine the optical switching characteristics in vertical cavity surface‐emitting laser‐type vertical‐to‐surface transmission electrophotonic devices (VC‐VSTEPs) with a pnpn structure. It is theoretically and experimentally demonstrated that both optical input/output characteristics are strongly influenced by the structure of the vertical cavity. With improvements in optical power output due to laser oscillation, optical switching speed is enhanced by two orders of magnitude compared to spontaneous emission‐type VSTEPs. A 20‐μm‐square VSTEP with an optimized vertical cavity structure demonstrates a low optical switching energy of 2.2 pJ with a switching time of 10 ns, as low as spontaneous emission‐type VSTEPs.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Electrochromic properties of vanadium pentoxide thin films prepared by new wet process

Katsumi Nagase, Youichi Shimizu, Norio Miura, and Noboru Yamazoe

Appl. Phys. Lett. 60, 802 (1992); http://dx.doi.org/10.1063/1.106523 (3 pages) | Cited 24 times

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Electrochromic properties of the V2O5 thin films prepared from a spinnable organic vanadium solution were investigated. The films heat‐treated at 400 °C showed clear two‐step electrochromism, deep blue⇄green⇄yellow, with its response time for obtaining ΔOD=0.5 being ∼2 s. The yellow and green colors showed good memory effects for more than 20 h, while the blue one was considerably degraded within 10 h.
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78.66.-w Optical properties of specific thin films
78.20.Jq Electro-optical effects
42.70.Ln Holographic recording materials; optical storage media

Wavelength tuning characteristics of tunable twin‐guide lasers with improved current‐injection structures

E. Yamamoto, M. Hamada, K. Suda, S. Nogiwa, and T. Oki

Appl. Phys. Lett. 60, 805 (1992); http://dx.doi.org/10.1063/1.106524 (2 pages) | Cited 1 time

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Tunable twin‐guide distributed feedback (TTG‐DFB) lasers are fabricated by the all‐metalorganic vapor phase epitaxy (MOVPE) process. A very wide continuous tuning range (4.9 nm/25 mA) with single‐mode operation is obtained by improving the efficiency of current‐injection into the modulation layer. The side‐mode suppression ratio (SMSR) is larger than 20 dB in the tuning range up to 4.3 nm.The threshold current is 16 mA and maximum output power is 5 mW.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes

Optical trapping of a metal particle and a water droplet by a scanning laser beam

Keiji Sasaki, Masanori Koshioka, Hiroaki Misawa, Noboru Kitamura, and Hiroshi Masuhara

Appl. Phys. Lett. 60, 807 (1992); http://dx.doi.org/10.1063/1.107427 (3 pages) | Cited 66 times

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Laser trapping of a metal particle in water or a water droplet in liquid paraffin, which cannot be attained by irradiation of a TEM00 mode focused laser beam, was experimentally confirmed based on a scanning laser trapping technique. Although a metal particle or a water droplet experiences repulsive radiation force from a laser beam (1064 nm, focused into a ∼1 μm spot), scanning of the laser beam circularly around the particle was successful to optically trap and tweezer the particle. Water and ethylene glycol droplets dispersed in liquid paraffin were also shown to be manipulated independently by scanning double laser‐beam trapping.
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06.60.Sx Positioning and alignment; manipulating, remote handling
42.62.-b Laser applications

Large second‐harmonic response of C60 thin films

X. K. Wang, T. G. Zhang, W. P. Lin, Sheng Zhong Liu, G. K. Wong, Manfred M. Kappes, R. P. H. Chang, and J. B. Ketterson

Appl. Phys. Lett. 60, 810 (1992); http://dx.doi.org/10.1063/1.106525 (3 pages) | Cited 56 times

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Second harmonic generation measurements were performed using 1.064 μm pulses provided by a Nd:YAG laser. A bulk second‐order susceptibility χ(2)z, zz = 2.1 × 10 − 9 esu was observed at room temperature, which is about 1.5 times the χ(2) value of quartz. χ(2) values in a poling field were studied as a function of temperature; the largest value occurred at a nominal temperature of 140 °C where χ(2) is ten times larger than the room temperature value.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.An Optical susceptibility, hyperpolarizability
78.66.-w Optical properties of specific thin films

Piezoexcitation of Rayleigh‐type acoustic waves induced by near‐surface absorption of laser pulses

S. A. Telenkov, X. R. Zhang, and V. E. Gusev

Appl. Phys. Lett. 60, 813 (1992); http://dx.doi.org/10.1063/1.106526 (3 pages) | Cited 5 times

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We have investigated the generation of Rayleigh‐type surface acoustic waves in high‐resistance CdS crystals under the action of the third harmonic of the YAG:Nd3+ pulsed laser. A linear dependence of the acoustic signal amplitude with applied external electric field and its saturation with increasing illumination intensity has been observed. Experimental results show that the acoustic wave excitation is due to the inverse piezoeffect in which an external electric field is screened by a dense photogenerated electron‐hole plasma. The saturation effect is caused by a nonlinear recombination of nonequilibrium carriers that prevents from increasing the screened part of the crystal volume.
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68.35.Gy Mechanical properties; surface strains
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Development and application of a microbeam plasma generator

Hideomi Koinuma, Hiroyuki Ohkubo, Takuya Hashimoto, Kiyoto Inomata, Tadashi Shiraishi, Akiharu Miyanaga, and Shigenori Hayashi

Appl. Phys. Lett. 60, 816 (1992); http://dx.doi.org/10.1063/1.106527 (2 pages) | Cited 62 times

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A microbeam plasma was successfully generated by using an originally designed capacitively coupled rf plasma reactor which was composed of a needle cathode (1 mm ϕ), a cylindrical anode (3 mm ϕ), and a quartz tubing inserted between the cathode and anode. When the reactor was operated in open air and helium was steadily fed as a discharge gas, a plasma beam (ϕ<2 mm) blew out into air. Conditions for generating a stable plasma were investigated. Preliminary results are presented on the etching of Si by this beam plasma, as well as an emission analysis of the etching plasma.
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52.75.Hn Plasma torches
52.80.Hc Glow; corona
81.65.-b Surface treatments

Relative fluorine concentrations in radio frequency/electron cyclotron resonance hybrid glow discharges

M. L. Passow, J. T. P. Pender, M. L. Brake, K. T. Sung, Y. Liu, S. W. Pang, and M. E. Elta

Appl. Phys. Lett. 60, 818 (1992); http://dx.doi.org/10.1063/1.107428 (3 pages) | Cited 2 times

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The relative concentration of atomic fluorine was measured in a radio frequency (rf) glow discharge and a modified electron cyclotron resonance microwave/rf hybrid discharge in CF4 using an actinometric technique. The dependence of fluorine concentration on rf and microwave power, pressure, flow, and excitation source are presented. Anomalous behavior with rf power at constant microwave power was observed when using the Ar 750‐nm line as the actinometric species.
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52.75.-d Plasma devices
52.80.-s Electric discharges
52.50.Gj Plasma heating by particle beams
81.65.-b Surface treatments

Simple soft x‐ray spectrograph with a multilayer mirror for plasma diagnostics

Naohiro Yamaguchi, Jungo Katoh, Teruji Cho, Syoichi Miyoshi, Sadao Aoki, and Kunio Nakajima

Appl. Phys. Lett. 60, 821 (1992); http://dx.doi.org/10.1063/1.107429 (3 pages) | Cited 1 time

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A simple soft x‐ray spectrograph with a multilayer mirror has been constructed and applied for the diagnostics of a magnetically confined large plasma, which combines wavelength dispersion and x‐ray imaging. Spectrophotographs of plasma radiation in the wavelength region from about 20 to 100 Å have been obtained with low‐wavelength resolution. A comparison between the measured x‐ray spectra and a calculation for bremsstrahlung x rays, in which the total reflection component as well as the Bragg reflection from the multilayer is taken into account, demonstrates that the spectrograph can be used to measure the electron temperature of plasmas.
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52.70.La X-ray and γ-ray measurements
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
07.85.-m X- and γ-ray instruments

Lattice‐matched epitaxial growth of single crystalline 3C‐SiC on 6H‐SiC substrates by gas source molecular beam epitaxy

Tatsuo Yoshinobu, Hideaki Mitsui, Iwao Izumikawa, Takashi Fuyuki, and Hiroyuki Matsunami

Appl. Phys. Lett. 60, 824 (1992); http://dx.doi.org/10.1063/1.107430 (3 pages) | Cited 15 times

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Lattice‐matched epitaxial growth of 3C‐SiC on 6H‐SiC substrates using an alternate supply of disilane (Si2H6) and acetylene (C2H2) gas molecular beams in a high vacuum was carried out. On 6H‐SiC(0001) substrates, epilayers of 3C‐SiC(111) with a double‐positioning twin structure were obtained. On the other hand, single crystalline 3C‐SiC(001) epilayers without twin structure were obtained on 6H‐SiC(0114) substrates even at low temperatures down to 850 °C.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.72.Mm Grain and twin boundaries

Oriented lead germanate thin films by excimer laser ablation

C. J. Peng, D. Roy, and S. B. Krupanidhi

Appl. Phys. Lett. 60, 827 (1992); http://dx.doi.org/10.1063/1.107431 (3 pages) | Cited 9 times

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c‐axis‐oriented lead germanate thin films were fabricated, to our knowledge for the first time, by pulsed excimer laser ablation. Composition analysis indicated that the films are stoichiometric and very close to the target composition. The orientation of the films along the unique polar axis (c axis) appeared to have been influenced by the ablation fluence via the energy of the ablated species and by the nature of substrates. Films were found to be ferroelectric at room temperature, with a remanent polarization of about 2.5 μC/cm2 at a coercive field of 55 kV/cm. The (003)‐oriented films also showed a clear onset of ferro–paraelectric phase transition at about 175 °C close to that of single crystals.
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77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Electronic structure of BaSn1−xSbxO3, for 0.0≤x≤0.2

M. Eibschutz, R. J. Cava, J. J. Krajewski, W. F. Peck, and W. M. Reiff

Appl. Phys. Lett. 60, 830 (1992); http://dx.doi.org/10.1063/1.106528 (3 pages) | Cited 2 times

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The Mössbauer effect of the 37.2 keV transition of 121Sb and the 23.88 keV γ transition of 119Sn has been employed to study the electronic configuration of Sb and Sn ions in the conducting materials BaSn1−xSbxO3 for 0≤x≤0.2. A single‐resonance absorption line is observed for each isotope. The isomer shifts change slightly with Sb content and fall in the region corresponding to Sb(V) and Sn(IV) valence states, respectively. The Sb isomer shift (IS) of 7.5 mm/s is significantly depressed (∼1 mm/s) relative to its value in a typical Sb(V)O6 chromophore and indicates a high degree of covalency, corresponding to significant 5sm5pn hybridization. The Sn IS of 0.1 mm/s indicates that the Sn atoms in BaSn1−xSbxO3 are more covalent than in BaSnO3. Charge disproportionation of the Sn and Sb into Sn(II) and Sn(IV) or Sb(III) and Sb(V) has not been observed.
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74.70.-b Superconducting materials other than cuprates
76.80.+y Mössbauer effect; other γ-ray spectroscopy
71.23.An Theories and models; localized states

De‐mixing of Nd2Fe14B during mechanical milling

T. Alonso, H. Yang, Y. Liu, and P. G. McCormick

Appl. Phys. Lett. 60, 833 (1992); http://dx.doi.org/10.1063/1.106529 (2 pages) | Cited 15 times

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The effect of mechanical milling on the structure of the Nd2Fe14B intermetallic has been investigated using x‐ray diffraction and electron microscopy. The milling resulted in the decomposition of Nd2Fe14B into α‐Fe and an amorphous phase. Attempts to mechanically alloy Fe and Nd powders resulted in a nanocrystalline mixture of the same two phases.
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81.20.-n Methods of materials synthesis and materials processing
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations

Atomic‐scale morphology and interfaces of epitaxially embedded metal (CoAl)/semiconductor (GaAs/AlAs) heterostructures

M. Tanaka, N. Ikarashi, H. Sakakibara, K. Ishida, and T. Nishinaga

Appl. Phys. Lett. 60, 835 (1992); http://dx.doi.org/10.1063/1.107432 (3 pages) | Cited 12 times

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We have grown GaAs/AlAs/CoAl/AlAs/GaAs epitaxially embedded metal/semiconductor heterostructures by molecular beam epitaxy. When the growth temperature of overgrown GaAs is relatively low (440 °C), the buried metallic CoAl film with the thickness of 50 Å is uniform and planar with extremely smooth and abrupt metal/semiconductor interfaces. The top (AlAs‐on‐CoAl) interface is atomically smooth with the roughness of at most 1 monolayer, while the bottom (CoAl‐on‐AlAs) interface has the roughness of 2–3 monolayers. This sample shows very low resistivity of 11–41 μ Ω cm at room temperature, indicating that the electrically continuous metallic film is grown. In contrast, when the GaAs overlayer is grown at 580 °C, CoAl dots with the size of 200–250 Å, which are covered with {001} and {111} facets, are fabricated, resulting from agglomeration.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

High‐rate, anisotropic dry etching of InP in HI‐based discharges

S. J. Pearton, U. K. Chakrabarti, A. Katz, F. Ren, and T. R. Fullowan

Appl. Phys. Lett. 60, 838 (1992); http://dx.doi.org/10.1063/1.106530 (3 pages) | Cited 18 times

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Electron cyclotron resonance HI/H2Ar discharges with additional rf‐induced dc biasing of the sample have been used to obtain extremely anisotropic dry etching of InP. At a fixed ratio of 10 HI/10 H2/5 Ar (total flow rate 25 sccm) and 1 mTorr pressure, both n+ and p+ InP have etch rates of ∼875 Å×min−1 at −100 V bias and ∼3000 Å min−1 at −400 V bias. The etch rates increase rapidly with total discharge pressure, reaching 4000 Å min−1 at 20 mTorr and −100 V dc bias. Rates in excess of 1 μm min−1 are obtained with higher HI flow rates or higher biases. Features 0.5 μm wide and 13 μm high have been etched, demonstrating the promise of this gas chemistry for production of laser mesas on InP and related materials with substantially faster etch rates (typically a factor of 8–10) relative to the more conventional CH4/H2 mixtures. The etched surfaces are smooth, with no evidence for iodine‐containing residues or preferential loss of either In or P. Both photoresist and SiO2 masks show minimal erosion in this mixture because of the ability to obtain practical etch rates at low pressure and low self‐bias.
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81.05.Bx Metals, semimetals, and alloys
81.40.Rs Electrical and magnetic properties related to treatment conditions
72.80.Ey III-V and II-VI semiconductors

Growth of strained InAs/InP quantum wells by molecular beam epitaxy

M. Hopkinson, J. P. R. David, P. A. Claxton, and P. Kightley

Appl. Phys. Lett. 60, 841 (1992); http://dx.doi.org/10.1063/1.106531 (3 pages) | Cited 16 times

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InAs/InP compressively strained quantum well structures with well thicknesses (LZ) 5 to 53 Å have been grown by solid source molecular beam epitaxy. Relatively sharp, intense, photoluminescence (PL) is observed over the wavelength range 1.1–2.05 μm at 10 K, with linewidths as narrow as 14 meV for a 30 Å well. Quantum confinement results in a shift of PL peak position of 130–710 meV with respect to the band gap of bulk strained InAs. The shifts are consistent with a conduction band offset (ΔEc) of 40%. At 300 K the wavelength range is extended to 2.23 μm, a value which to our knowledge is the longest wavelength reported for InAs/InP quantum wells. The high quality of pseudomorphic structures with well thicknesses exceeding estimates of critical layer thickness is demonstrated by transmission electron microscopy studies.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.55.Cr III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Low‐defect‐density germanium on silicon obtained by a novel growth phenomenon

D. P. Malta, J. B. Posthill, R. J. Markunas, and T. P. Humphreys

Appl. Phys. Lett. 60, 844 (1992); http://dx.doi.org/10.1063/1.106532 (3 pages) | Cited 17 times

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Heteroepitaxial Ge on Si has been grown using molecular beam epitaxy at a Si substrate temperature of 900 °C. Electron microscopy results reveal a highly faceted interface, indicating localized Ge melting and subsequent local alloying with Si. Furthermore, this phenomenon is associated with extensive threading dislocation confinement near the Ge/Si interface. Etch pit density measurements obtained on Ge heteroepitaxial films that have undergone interfacial melting are as low as 105 cm−2.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.-w Optical properties of specific thin films
68.35.Rh Phase transitions and critical phenomena

Annealing effect on the carrier concentration in heavily C‐doped p+‐AlGaAs

Kazuo Watanabe and Hajime Yamazaki

Appl. Phys. Lett. 60, 847 (1992); http://dx.doi.org/10.1063/1.106533 (3 pages) | Cited 13 times

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Carrier concentration in heavily carbon‐doped p+‐AlGaAs epilayers grown by metalorganic chemical vapor deposition is increased by annealing at temperatures from 500 to 800 °C under a SiN capped condition in nitrogen gas ambient and is decreased by annealing at 850 °C. The carrier concentration reaches a maximum value corresponding to nearly 100% activation at about 600 °C. These thermal behaviors can be well explained by the overlapping of two components. One is the carrier increase which occurs even at as low as 500 °C and is related to the decrease of hydrogen atoms in the epilayers. The hydrogen atoms probably deactivate the carbon acceptors in a nearly one‐to‐one correspondence. The other is the carrier decrease at temperatures higher than 600 °C, which may be due to a change in the occupation site preference of carbon atoms from arsenic sites.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
61.72.Bb Theories and models of crystal defects
61.72.U- Doping and impurity implantation
71.55.Eq III-V semiconductors

Nanofeatures on GaAs (111)B via photolithography

K. C. Rajkumar, K. Kaviani, J. Chen, P. Chen, and A. Madhukar

Appl. Phys. Lett. 60, 850 (1992); http://dx.doi.org/10.1063/1.106534 (3 pages) | Cited 6 times

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Mesas defined on GaAs(111)B substrates by photolithography followed by wet chemical etching are found to be triangular pyramids with truncated tops. The areal dimensions of the unetched tops of the pyramidal mesas diminish with etch time and can be reduced to an apex on continued etching. Transmission electron microscopy is used to examine a post‐growth etched GaAs/Al0.3Ga0.7As multilayer structure grown on GaAs(111)B. A three‐dimensionally confined GaAs volume of the order of 105 atoms is observed.
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81.65.-b Surface treatments
85.40.Hp Lithography, masks and pattern transfer

New theory of linewidths of radiative transitions due to disordering in semiconductor alloys

S. M. Lee and K. K. Bajaj

Appl. Phys. Lett. 60, 853 (1992); http://dx.doi.org/10.1063/1.106509 (3 pages) | Cited 13 times

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A quantum mechanical formalism for the excitonic photoluminescence linewidth in semiconductor alloys due to band gap fluctuations caused by the random distributions of alloy components is presented. Using a quantum mechanical description for the excitonic system, the mean deviation of its transition energy due to the statistical potential fluctuations is calculated using a first‐order perturbation theory. We then apply this formalism to calculate the linewidth of the ground state excitonic transition as a function of composition. Specifically, the excitonic linewidth in AlxGa1−xAs alloy as a function of Al concentration is calculated and compared with earlier models and available low‐temperature photoluminescence data.
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71.35.-y Excitons and related phenomena
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Formation of ‘‘super’’ As‐rich GaAs(100) surfaces by high temperature exposure to arsine

B. A. Banse and J. R. Creighton

Appl. Phys. Lett. 60, 856 (1992); http://dx.doi.org/10.1063/1.106510 (3 pages) | Cited 24 times

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We report that arsine exposures between 100 and 350 °C will produce ‘‘super’’ As‐rich surfaces [arsenic coverages of up to ∼1.7 monolayers (ML, where 1 ML=6.26×1014 atoms cm−2)] of GaAs(100) that exhibit a c(4×4) low energy electron diffraction pattern. Temperature programmed desorption studies show that after AsD3 exposures of up to 2.6×106 L (1 L=1×10−6 Torr s) to the Ga‐stabilized surface, three excess As desorption speaks are observed with maxima at 440, 480, and 570 °C. As4 desorption is detected from the lowest temperature state, while the other states desorb primarily as As2. The significance of these results for the understanding of the atomic layer epitaxy process is addressed.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Charge‐transfer‐induced optical bistability in an asymmetric quantum‐well structure

M. Seto and M. Helm

Appl. Phys. Lett. 60, 859 (1992); http://dx.doi.org/10.1063/1.106511 (3 pages) | Cited 22 times

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We present self‐consistent calculations of the energy levels in an asymmetric coupled quantum‐well structure coupled to a CO2 laser source which is nearly resonant with an intersubband transition. Solving Schrödinger’s and Poisson’s equations concurrently with a set of rate equations, it is shown that intrinsic optical bistability can be achieved. The bistability arises from charge transfer and a subsequent, self‐consistent shift of the energy levels which feeds back to the absorption rate. Using realistic parameters, an on‐off intensity ratio of 4:1 at switching powers of a few 100 kW/cm2 is predicted at about 10‐μm wavelength.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Characterization of ZnSe/GaAs heterostructure using transverse acoustoelectric voltage spectroscopy

K. J. Han, A. Abbate, I. B. Bhat, and P. Das

Appl. Phys. Lett. 60, 862 (1992); http://dx.doi.org/10.1063/1.107433 (3 pages) | Cited 8 times

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Transverse acoustoelectric voltage (TAV) spectroscopy has been employed to characterize the interface of high‐resistivity ZnSe/GaAs heterostructure. Single‐ and double‐beam TAV spectroscopy have been used to study the interface band and impurity transitions of the heterostructure at room temperature. From the TAV spectrum, a conduction band offset of 0.059 eV was found. The spectral behavior of the TAV waveform for single and double‐beam cases was different due to the presence of a large number of surface states at the interface. Additional transitions in ZnSe film were also found in the double‐beam case when a bias beam of 2.637 eV was used.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.20.At Surface states, band structure, electron density of states
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