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24 Feb 1992

Volume 60, Issue 8, pp. 921-1029

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Resonant cavity light‐emitting diode

E. F. Schubert, Y.‐H. Wang, A. Y. Cho, L.‐W. Tu, and G. J. Zydzik

Appl. Phys. Lett. 60, 921 (1992); http://dx.doi.org/10.1063/1.106489 (3 pages) | Cited 138 times

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A novel concept of a light‐emitting diode (LED) is proposed and demonstrated in which the active region of the device is placed in a resonant optical cavity. As a consequence, the optical emission from the active region is restricted to the modes of the cavity. Resonant cavity light‐emitting diodes (RCLED) have higher spectral purity and higher emission intensity as compared to conventional light emitting diodes. Results on a top‐emitting RCLED structure with AlAs/AlxGa1−xAs quarter wave mirrors grown by molecular beam epitaxy are presented. The experimental emission linewidth is 17 meV (0.65 kT) at room temperature. The top‐emission intensity is a factor of 1.7 higher as compared to conventional LEDs.
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85.60.Jb Light-emitting devices
85.30.De Semiconductor-device characterization, design, and modeling
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

(InAs)1/(GaAs)4 superlattices quantum‐well laser

N. K. Dutta, Naresh Chand, J. Lopata, and R. Wetzel

Appl. Phys. Lett. 60, 924 (1992); http://dx.doi.org/10.1063/1.106462 (2 pages) | Cited 7 times

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We report the fabrication and performance characteristics of (InAs1)/(GaAs)4 short‐period superlattice (SPS) strained quantum‐well lasers emitting near 1 μm. The SPS consists of 6 periods of 1 and 4 ML of InAs and GaAs, respectively. The 250‐μm‐long ridge waveguide lasers have a threshold current of 10 mA, an external differential quantum efficiency of 0.35 mW/mA facet, and have operated to a temperature of 200 °C.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Room temperature blue lasing of ZnSxSe1−x alloys by photopumping

X. H. Yang, J. Hays, W. Shan, J. J. Song, E. Cantwell, and J. Aldridge

Appl. Phys. Lett. 60, 926 (1992); http://dx.doi.org/10.1063/1.106463 (3 pages) | Cited 6 times

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Photopumped lasing of ZnS0.05Se0.95 alloys grown by seeded physical vapor‐phase transport technique is observed at room temperature for the first time. This is achieved with the excitation photon energy tuned close to the band gap. The longitudinal lasing modes are well resolved. This work demonstrates that ZnSxSe1−x alloys can be used as an alternative to ZnSe in blue light‐emitting device fabrications.
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42.55.Px Semiconductor lasers; laser diodes
81.10.Bk Growth from vapor

Resonant‐cavity InGaAlAs/InGaAs/InAlAs phototransistors with high gain for 1.3–1.6 μm

Ananth Dodabalapur and T. Y. Chang

Appl. Phys. Lett. 60, 929 (1992); http://dx.doi.org/10.1063/1.106464 (3 pages) | Cited 16 times

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We describe the characteristics of resonant‐cavity heterojunction bipolar phototransistors (RCHPTs) grown on InP substrates. The active layers are part of a Fabry–Perot cavity in which gold is the top reflector and an InGaAlAs/InAlAs quarter‐wave stack is the bottom reflector. The stack and active layer thicknesses are such that the absorption is resonantly enhanced by ∼100% at 1.28 μm in one wafer and 1.52 μm in another. An enhancement in photocurrent response also of ∼100% is obtained at resonance. A dc phototransistor current gain of 5000, corresponding to an optical gain of ∼2500 at resonance, was measured on a three‐terminal device in a RCHPT wafer.
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85.60.Dw Photodiodes; phototransistors; photoresistors

Laser diode‐pumped femtosecond erbium‐doped fiber laser with a sub‐ring cavity for repetition rate control

Eiji Yoshida, Yasuo Kimura, and Masataka Nakazawa

Appl. Phys. Lett. 60, 932 (1992); http://dx.doi.org/10.1063/1.106465 (3 pages) | Cited 11 times

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It is shown for the first time that the pulse repetition rate of a femtosecond erbium‐doped fiber laser with a nonlinear amplifying loop mirror can be controlled by attaching a sub‐ring linear cavity to the main cavity. The transit time in the sub‐ring cavity is set as an inverse integer of that in the main cavity, resulting in an increase in the repetition rate of the output pulse. The pulse thus obtained has a width of 315 fs, a peak power of 12.7 W, and a repetition rate of 125 MHz.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

New molecular design approach for noncentrosymmetric crystal structures: Lambda (Λ)‐shaped molecules for frequency doubling

H. Yamamoto, S. Katogi, T. Watanabe, H. Sato, S. Miyata, and T. Hosomi

Appl. Phys. Lett. 60, 935 (1992); http://dx.doi.org/10.1063/1.106466 (3 pages) | Cited 20 times

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Second‐order optical nonlinearity exists in a noncentrosymmetric crystal. We investigated a new molecular concept for noncentrosymmetric crystal structure. The Λ‐shaped molecules have been found to easily form noncentrosymmetric crystals by stacking along one direction. The configuration of Λ‐shaped molecules is close to an optimum condition for crystal phase‐matched nonlinearity. We demonstrate that methanediamine derivatives forming Λ‐shaped conformation are promising as efficient χ(2) materials.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
61.66.Hq Organic compounds

Hydrogen detection based on coloration of anodic tungsten oxide film

K. Ito and T. Ohgami

Appl. Phys. Lett. 60, 938 (1992); http://dx.doi.org/10.1063/1.106467 (3 pages) | Cited 35 times

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A novel method for detecting hydrogen was developed by using very thin palladium overlayer‐anodic oxide film‐tungsten sheet structure. Its optical reflectance is modulated by the presence of hydrogen in the ambient gas. The effect can be explained by the free electron modulation of optical constants of the oxide film. It is a prerequisite for fast hydrogen detection that the film consists of hydrated tungsten oxide WO3⋅H2O. The present hydrogen detector has optical readouts compatible to both thin film micro‐optics and fiber optics.
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78.66.-w Optical properties of specific thin films
81.05.Bx Metals, semimetals, and alloys
66.30.J- Diffusion of impurities

Investigations of behavior of particles generated from laser‐ablated YBa2Cu3O7−x target using laser‐induced fluorescence

Tatsuo Okada, Noboru Shibamaru, Yasushi Nakayama, and Mitsuo Maeda

Appl. Phys. Lett. 60, 941 (1992); http://dx.doi.org/10.1063/1.106468 (3 pages) | Cited 20 times

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YBa2Cu3O7−x target was laser ablated by an ArF excimer laser, and the time of flight (TOF) distributions of Ba atoms were investigated by laser induced fluorescence (LIF) as a function of the irradiation laser fluence (0.2–3 J/cm2) and the surrounding oxygen gas pressure (0–5.32 Pa). At higher irradiation fluence (≳2 J/cm2) without oxygen gas, the TOF distribution showed a twin‐peak distribution with fast and slow velocities, while only the slow velocity component was observed at lower fluence. When oxygen gas was introduced, the low velocity component was quenched at lower oxygen pressure than the high one, indicating that the TOF distribution can be controlled by the oxygen pressure.
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81.10.Bk Growth from vapor
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
74.70.-b Superconducting materials other than cuprates

Phase transition of Al‐Yb alloy films upon ion irradiation and thermal annealing

J. R. Ding, D. Z. Che, H. B. Zhang, K. Tao, and B. X. Liu

Appl. Phys. Lett. 60, 944 (1992); http://dx.doi.org/10.1063/1.106469 (3 pages) | Cited 9 times

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Al80Yb20 multilayered alloy films were amorphized by ion beam mixing at room temperature. A new metastable phase of hexagonal structure was formed when the irradiation dose was greater than that required to amorphize the alloy films. The metastable phase turned amorphous when the film was annealed at 500 °C for 10 min. It was also found that Al‐Yb multilayers could be amorphized by solid state reaction. Al1−xYbx multilayered alloy films, with 17<x<30 at. %, became amorphous through interdiffusion at 450 °C for 20 min.
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81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations
61.80.Jh Ion radiation effects

Hexagonal barium titanate films

C. V. R. Vasant Kumar, Ajay Dhar, and Abhai Mansingh

Appl. Phys. Lett. 60, 947 (1992); http://dx.doi.org/10.1063/1.106470 (3 pages) | Cited 5 times

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The fabrication of hexagonal barium titanate films by sputtering technique is reported. Compressed powders of hexagonal barium titanate were sputtered in argon/oxygen gas mixtures. The as‐grown films were amorphous and a post‐deposition annealing above 700 °C resulted in the crystallization of the films with hexagonal crystal structure. Transmission electron microscopy was used to study the crystallization of the amorphous films.
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77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
81.15.Cd Deposition by sputtering

Vapor phase synthesis of crystalline nanometer‐scale GaAs clusters

Winston A. Saunders, Peter C. Sercel, Harry A. Atwater, Kerry J. Vahala, and Richard C. Flagan

Appl. Phys. Lett. 60, 950 (1992); http://dx.doi.org/10.1063/1.106471 (3 pages) | Cited 29 times

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We report the synthesis of crystalline nanometer‐scale GaAs clusters in the 5–10 nm size regime. The clusters are formed by the homogeneous nucleation of a nonequilibrium vapor created by the explosive vaporization of a bulk GaAs sample in an inert atmosphere. High resolution electron microscopy and diffraction show that the clusters have zincblende crystal structure and are faceted. Optical measurements on the particles are suggestive of quantum confinement effects.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
81.10.Bk Growth from vapor

Direct experimental evidence for diffusion of dopants via pairs with intrinsic point defects

P. Pichler, R. Schork, T. Klauser, and H. Ryssel

Appl. Phys. Lett. 60, 953 (1992); http://dx.doi.org/10.1063/1.106472 (3 pages) | Cited 3 times

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Boron was implanted into silicon at a wafer temperature of 950 °C. The resulting boron profile showed a marked uphill diffusion at the surface and a very high diffusion enhancement. Initially homogeneously distributed antimony atoms showed remarkable redistribution effects after the implantation. These experiments allow the validation of diffusion theories, including the effects of point defect gradients on the migration of dopants. It will be shown that the experimental results agree well with the predictions of pair diffusion theories.
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61.72.uf Ge and Si
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
66.30.J- Diffusion of impurities

Selective and epitaxial deposition of β‐FeSi2 on silicon by rapid thermal processing‐chemical vapor deposition using a solid iron source

J. L. Regolini, F. Trincat, I. Berbezier, and Y. Shapira

Appl. Phys. Lett. 60, 956 (1992); http://dx.doi.org/10.1063/1.106473 (3 pages) | Cited 28 times

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Selective semiconducting iron disilicide has been epitaxially deposited by rapid thermal processing chemical vapor deposition onto patterned silicon wafers. Using a solid iron source, we obtained stoichiometric β‐FeSi2. The extrinsic conductivity energy levels are about 0.1 eV from the valence band and we show that they are responsible for the observed ‘‘infrared quenching.’’
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.55.Hx Other solid inorganic materials

Evaluation of the surface structure of diamond films prepared in a combustion flame by surface‐enhanced Raman scattering

Katsuyuki Okada, Shojiro Komatsu, Takamasa Ishigaki, Seiichiro Matsumoto, and Yusuke Moriyoshi

Appl. Phys. Lett. 60, 959 (1992); http://dx.doi.org/10.1063/1.106474 (3 pages) | Cited 6 times

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Surface‐enhanced Raman scattering (SERS) was performed on the surface characterization of polycrystalline diamond films prepared in a C2H2‐O2 combustion flame. The conventional Raman spectra of a diamond film showed only the peak at 1333 cm−1 corresponding to diamond. However, if Ag island films were coated onto the diamond surface (Ag overlayer method), the resultant spectra changed drastically. The peaks around 1580 and 1355 cm−1 were remarkably enhanced; the former is assigned to the sp2 graphite structure and the latter is assigned to the disordered microcrystalline graphite structure, respectively. This would indicate that the diamond surface has a sp2‐like structure, which is different from the sp3 structure in bulk. This surface configuration is discussed from the viewpoint of the surface reconstruction.  
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.35.B- Structure of clean surfaces (and surface reconstruction)

Sensitivity of resonant excitation and photoluminescence excitation measurements to exciton localization effects in GaAs/AlGaAs quantum wells

D. C. Reynolds, K. R. Evans, C. E. Stutz, and P. W. Yu

Appl. Phys. Lett. 60, 962 (1992); http://dx.doi.org/10.1063/1.106475 (3 pages) | Cited 5 times

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Low temperature (2 K) photoluminescence (PL), PL excitation (PLE), and resonant excitation (RE) measurements on a very high quality, 150‐Å‐wide GaAs/Al0.3Ga0.7As multiquantum well structure are reported, with a focus on exciton localization effects. The PL spectra show evidence of effective submonolayer well width fluctuations. Excitons observed via RE are found to be predominantly localized; i.e., they decay from the same effective well‐width region in which they are formed, while both localized and delocalized excitons are observed in PLE measurements. Delocalized excitons are free to diffuse to differing effective well‐width regions which are energetically accessible. These results are supported by time‐resolved PL measurements, which show essentially identical time‐responses for differing effective well‐width regions under resonant excitation conditions, thereby demonstrating the localized nature of resonantly created excitons.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
71.35.-y Excitons and related phenomena

Direct verification of energy back transfer from Yb 4f‐shell to InP host

Akihito Taguchi, Moriyuki Taniguchi, and Kenichiro Takahei

Appl. Phys. Lett. 60, 965 (1992); http://dx.doi.org/10.1063/1.106476 (3 pages) | Cited 33 times

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We report direct verification of energy back transfer from a Yb 4f‐shell to an InP host, which has been proposed as a quenching mechanism for the intrinsic thermal quenching of intra‐4f‐shell luminescence. Photoluminescence time decay of the band‐edge related luminescence for a Yb‐doped InP sample was examined. In the temperature region from 100 to 120 K, it was observed that the luminescence time‐decay curve is composed of two exponential decay components. The decay‐time constant of the slower component in the band‐edge related luminescence is the same as that in the Yb 4f‐shell luminescence. This fact clearly shows that there is an energy transfer between the Yb 4f‐shell electronic state and the InP host electronic state, and the energy back‐transfer mechanism is the cause of the intrinsic thermal quenching of the Yb intra‐4f‐shell luminescence.
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78.55.Cr III-V semiconductors
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.30.Fs III-V and II-VI semiconductors

Molecular layer etching of GaAs

Yoshinobu Aoyagi, Kohji Shinmura, Kiyoshi Kawasaki, Tomoko Tanaka, Kenji Gamo, Susumu Namba, and Ichirou Nakamoto

Appl. Phys. Lett. 60, 968 (1992); http://dx.doi.org/10.1063/1.106477 (3 pages) | Cited 18 times

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Layer‐by‐layer controlled molecular layer self‐limiting etching at one molecular layer of GaAs was successfully achieved for the first time by alternatively feeding an etchant of Cl and applying a low energy Ar ion beam to the GaAs substrate. The etching rate saturates exactly at one molecular layer per cycle and is independent of etchant feeding rate and the energetic ion beam flux.
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81.65.-b Surface treatments
85.40.Hp Lithography, masks and pattern transfer

Integrated wavelength demultiplexer‐receiver on InP

C. Bornholdt, D. Trommer, G. Unterbörsch, H. G. Bach, F. Kappe, W. Passenberg, W. Rehbein, F. Reier, C. Schramm, R. Stenzel, A. Umbach, H. Venghaus, and C. M. Weinert

Appl. Phys. Lett. 60, 971 (1992); http://dx.doi.org/10.1063/1.107460 (3 pages) | Cited 2 times

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A detector stage comprising a photodiode, a field‐effect transistor, and a load resistor, and a wavelength demultiplexer have been monolithically integrated in the GaInAsP/InP material system. Chips were mounted into complete modules and operated in a 1.3 μm/1.55 μm bidirectional transmission link. At 576 Mbit/s and 10−9 bit error rate the sensitivity of the module was −21 dBm, while the intrinsic sensitivity of the receiver was determined to be −28 dBm.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.Bq Design and performance testing of integrated-optical systems

Role of hydrogen in synchrotron‐radiation‐stimulated evaporation of amorphous SiO2 and microcrystalline Si

H. Akazawa, J. Takahashi, Y. Utsumi, I. Kawashima, and T. Urisu

Appl. Phys. Lett. 60, 974 (1992); http://dx.doi.org/10.1063/1.106478 (3 pages) | Cited 9 times

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We report on the photostimulated evaporation of amorphous SiO2 and microcrystalline Si by synchrotron radiation in ultrahigh vacuum and in H2 ambients up to 0.08 Torr. For a‐SiO2, the evaporation was slowed by introduction of H2, which suggests that the highly efficient decomposition process is hindered by hydrogen termination (‐OH species formation). For μc‐Si, the evaporation rate in ultrahigh vacuum was strongly affected by the degree of crystallization. The evaporation rate doubled with introduction of 0.08 Torr H2. Hydrogenation of the surface (SiHx species formation) slightly reduces the activation barrier for evaporation.
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81.65.-b Surface treatments
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
82.50.-m Photochemistry

Thermal and photochemical decomposition pathways of AsH3 on GaAs(100): Implication for atomic layer epitaxy

X.‐Y. Zhu, M. Wolf, T. Huett, J. Nail, B. A. Banse, J. R. Creighton, and J. M. White

Appl. Phys. Lett. 60, 977 (1992); http://dx.doi.org/10.1063/1.106479 (3 pages) | Cited 6 times

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We report spectroscopic evidence for the thermal and photochemical decomposition pathways of arsine (AsH3) adsorbed on Ga‐rich GaAs(100). Arsine adsorbs molecularly on the Ga‐rich GaAs surface at 120 K and dissociates upon either heating to above 200 K or irradiation with 6.4 eV photons. The dissociation of arsine is accompanied by the formation of surface Ga‐H species, which is both thermally and photochemically more stable than surface AsHx. This implies that the removal of hydrogen from Ga is the rate‐limiting step in the initial stage of As deposition from AsH3 in the thermal or photoassisted atomic‐layer epitaxy of GaAs.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.50.-m Photochemistry
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Broadly tunable InGaAsP/InP buried rib waveguide vertical coupler filter

R. C. Alferness, L. L. Buhl, U. Koren, B. I. Miller, M. G. Young, T. L. Koch, C. A. Burrus, and G. Raybon

Appl. Phys. Lett. 60, 980 (1992); http://dx.doi.org/10.1063/1.106480 (3 pages) | Cited 20 times

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We report the first demonstration of broadly electrically tunable (215 Å), narrow‐band (∼20 Å full width at half maximum), wavelength selective, grating‐assisted coupling between vertically stacked buried rib InGaAsP/InP channel waveguides. This current injection tuned device is suitable for integration in a variety of photonic devices and integrated circuits including broadly tunable extended cavity lasers, amplifier/filter, and demultiplexer/detector circuits.
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42.79.Gn Optical waveguides and couplers
42.79.Ci Filters, zone plates, and polarizers
42.82.Et Waveguides, couplers, and arrays

Electrical behavior of Yb ion in p‐ and n‐type InP

D. Seghier, T. Benyattou, G. Bremond, F. Ducroquet, J. Gregoire, G. Guillot, C. Lhomer, B. Lambert, Y. Toudic, and A. Le Corre

Appl. Phys. Lett. 60, 983 (1992); http://dx.doi.org/10.1063/1.106481 (3 pages) | Cited 11 times

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In this letter are reported admittance spectroscopy experiments on Yb‐doped p‐ and n‐type InP grown by the synthesis method. The purpose is to give a clear understanding of the rare‐earth ion electrical behavior. In p‐type material, the results indicate the presence of two peaks in the conductance spectra at low temperature. The activation energies of these levels have been found to be 42±5 and 50±5 meV above the valence band. We attribute them to Mg and Yb, respectively. In n‐type material, the conductance spectra present a peak at low temperature with an activation energy of 29±3 meV below the conduction band and we attribute it to Yb ion. To explain the origin of these Yb‐related traps, we propose that this ion acts as an isoelectronic trap in InP.
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71.55.Eq III-V semiconductors
78.55.Cr III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Anomalous temperature dependencies of photoluminescence for visible‐light‐emitting porous Si

X. L. Zheng, W. Wang, and H. C. Chen

Appl. Phys. Lett. 60, 986 (1992); http://dx.doi.org/10.1063/1.106482 (3 pages) | Cited 57 times

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Porous Si has been prepared by the electrochemical anodization method. At room temperature it has a light‐emission peak energy in the range of 1.50–2.06 eV. The results from variable‐temperature photoluminescence (PL) show anomalous temperature dependencies of the spectral characteristics: the emission intensity increases with decreasing temperature until reaching an intensity maximum at about 100–200 K, then it decreases at lower temperatures; the emission energy shift with temperature has no fixed trend and varies with sampling point. Such dependencies are reversible with the two directions of temperature change. The above observations can be explained by phonon participation in the light‐emission process of porous Si.
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78.55.Hx Other solid inorganic materials
78.66.-w Optical properties of specific thin films

Structural characterization of low‐temperature molecular beam epitaxial In0.52Al0.48As/InP heterolayers

A. Claverie, K. M. Yu, W. Swider, Z. Liliental‐Weber, M. O’Keefe, R. Kilaas, J. Pamulapati, and P. K. Bhattacharya

Appl. Phys. Lett. 60, 989 (1992); http://dx.doi.org/10.1063/1.106483 (3 pages) | Cited 17 times

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A systematic study of the structural quality and arsenic content of as‐grown In0.52Al0.48As/InP layers deposited on InP by molecular beam epitaxy at temperatures between 150 and 450 °C was performed using transmission electron microscopy and particle‐induced x‐ray emission. We found that the amount of As incorporated in the layers generally increases with decreasing growth temperature, with the crystalline quality of the layers being good at growth temperatures higher than 200 °C. At 150 °C, a large density of pyramidal defects is formed, the defects are related to the very large amount of excess As incorporated into the layer. The mechanisms leading to the formation of these defects are discussed. At 200 °C, however, the amount of excess As is lower than expected, and wavy streaks of diffuse scattering are seen in electron diffraction. It is shown that small ordered domains of the CuPt type on the group III atoms are responsible for these features.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology

Low dark current step‐bound‐to‐miniband transition InGaAs/GaAs/AlGaAs multiquantum‐well infrared detector

Larry S. Yu, Y. H. Wang, Sheng S. Li, and Pin Ho

Appl. Phys. Lett. 60, 992 (1992); http://dx.doi.org/10.1063/1.106484 (3 pages) | Cited 23 times

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A new step‐bound‐to‐miniband (SBTM) transition multiquantum‐well long‐wavelength infrared photodetector (LWIP) using a lightly strained In0.07Ga0.93As quantum well and a short‐period GaAs/Al0.4Ga0.6As superlattice barrier structure has been developed. The new structure created a potential ‘step’ in the superlattice barrier to block the undesirable electron tunneling current from the heavily doped ground state in the quantum well, which results in a significant reduction in the device dark current. The measured absorbance spectra and photocurrent are in good agreement with our theoretical predictions. The peak detectivity D∗ at λ=10.5 μm was found to be 2.1×1010 cm √Hz/W at Vb=5 V and T=63 K.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
78.30.Fs III-V and II-VI semiconductors
72.40.+w Photoconduction and photovoltaic effects
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