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2 Mar 1992

Volume 60, Issue 9, pp. 1037-1146

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Blue light generation by frequency doubling of AlGaAs broad area amplifier emission

L. Goldberg, L. Busse, and D. Mehuys

Appl. Phys. Lett. 60, 1037 (1992); http://dx.doi.org/10.1063/1.106436 (3 pages) | Cited 10 times

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The diffraction limited emission of a traveling wave single pass 600‐μm wide SQW GaAlAs amplifier injected by a Ti:Sapphire laser was frequency doubled in KNbO3 to generate 400 mW peak power 5 μs long pulses of 431 nm light. A maximum single pass frequency conversion efficiency of 6.3% was observed.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.72.Bj Visible and ultraviolet sources

Astigmatism correction in x‐ray scanning photoemission microscope with use of elliptical zone plate

H. Ade, C.‐H. Ko, and E. Anderson

Appl. Phys. Lett. 60, 1040 (1992); http://dx.doi.org/10.1063/1.106437 (3 pages) | Cited 6 times

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We report the impact of an elliptical, high resolution zone plate on the performance of an initially astigmatic soft x‐ray scanning photoemission microscope. A zone plate with carefully calibrated eccentricity has been used to eliminate astigmatism arising from transport optics, and an improvement of about a factor of 3 in spatial resolution was achieved. The resolution is still dominated by the source size and chromatic aberrations rather than by diffraction and coma, and a further gain of about a factor of 2 in resolution is possible. Sub 100 nm photoemission microscopy with primary photoelectrons is now within reach.  
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42.30.-d Imaging and optical processing
42.79.Ci Filters, zone plates, and polarizers
07.85.-m X- and γ-ray instruments

Comparison of the facet heating behavior between AlGaAs single quantum‐well lasers and double‐heterojunction lasers

W. C. Tang, H. J. Rosen, P. Vettiger, and D. J. Webb

Appl. Phys. Lett. 60, 1043 (1992); http://dx.doi.org/10.1063/1.106438 (3 pages) | Cited 10 times

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The facet heating behavior of AlGaAs double‐heterojunction (DH) lasers was measured as a function of injection current using Raman microprobe spectroscopy. The result from the DH lasers is compared to AlGaAs ridge‐waveguided single quantum‐well (SQW) lasers. A clear discontinuity in the facet temperature rise was found below and above the lasing threshold for the DH lasers, indicating a substantial contribution to facet heating by the photon flux. This is in contrast to the facet heating behavior of SQW lasers in which photon flux has been shown to play only a minor role. The data suggest a large difference in the facet absorption of the lasing photons between the two types of lasers. This is further supported by the effect of argon laser probe beam induced facet heating on the diode laser’s output power.
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42.60.Mi Dynamical laser instabilities; noisy laser behavior
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Remarkable reduction of threshold current density by substrate misorientation effects in 660 nm visible light lasers with GaInP bulk active layers

Akihiko Kikuchi and Katsumi Kishino

Appl. Phys. Lett. 60, 1046 (1992); http://dx.doi.org/10.1063/1.106439 (3 pages) | Cited 5 times

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660 nm wavelength GaInP/AlInP visible lasers with 60 nm thick GaInP active layers were grown on misoriented (100) GaAs substrates by gas source molecular beam epitaxy. A remarkable reduction in threshold current density Jth was observed with increasing substrate misorientation angle (SMA) from the (100) surface toward the [011] direction. Jth was 1.23 kA/cm2 on average for SMA of 0°, and 841 A/cm2 for SMA of 15° (both cavity lengths were 600 μm). For 1.1 mm long cavity lasers, a minimum Jth was 702 A/cm2 which was obtained for ordinary bulk‐crystal active layers without strain and quantum‐well effects. Such misorientation effects on reduction of Jth was systematically discussed in relation to various lasing parameters.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.55.Cr III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Simple description of laterally resonant, distributed‐feedback‐like modes of arrays of antiguides

C. A. Zmudzinski, D. Botez, and L. J. Mawst

Appl. Phys. Lett. 60, 1049 (1992); http://dx.doi.org/10.1063/1.106440 (3 pages) | Cited 15 times

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The Bloch‐function method is used to provide a simple, yet accurate treatment of the leaky modes of infinite‐extent antiguided arrays. Laterally resonant modes of infinite arrays are described for the first time. Bloch‐function solutions for infinite arrays are used to explain key characteristics of the modes of finite‐extent antiguided arrays. It is found that the resonant modes of antiguided arrays satisfy the second‐order lateral Bragg condition, and consequently are analogous to the modes of second‐order distributed‐feedback (DFB) lasers. In effect, the resonant‐optical‐waveguide (ROW) array is a second‐order lateral DFB structure with the radiative component along the longitudinal device axis, and zero stopband.
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42.55.Px Semiconductor lasers; laser diodes
85.30.De Semiconductor-device characterization, design, and modeling
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Hp Optical processors, correlators, and modulators

Photorefractivity in vanadium‐doped ZnTe

Mehrdad Ziari, William H. Steier, Peter M. Ranon, Sudhir Trivedi, and Marvin B. Klein

Appl. Phys. Lett. 60, 1052 (1992); http://dx.doi.org/10.1063/1.106441 (3 pages) | Cited 13 times

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We report on the observation of photorefractivity in vanadium‐doped zinc telluride in the 0.63–1.3‐μm‐wavelength range. Photorefractive two‐beam coupling, along with photoluminescence and absorption spectroscopy, are used to characterize a vapor‐phase transfer‐grown crystal. At 0.63 μm, we measure a grating‐formation time of 15 μs at an intensity of 4.7 W/cm2, which is comparable to GaAs at 1.06 μm, and is faster than photorefractive cubic and ferroelectric oxides.
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78.20.Jq Electro-optical effects
78.55.Et II-VI semiconductors
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

New excited‐state absorption measurement technique and application to Pr3+ doped fluorozirconate glass

R. S. Quimby and B. Zheng

Appl. Phys. Lett. 60, 1055 (1992); http://dx.doi.org/10.1063/1.106442 (3 pages) | Cited 25 times

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A new technique for analyzing excited state absorption (ESA) is introduced, in which the relative ESA spectrum is determined directly from fluorescence measurements. This represents, to our knowledge, the first application of the McCumber theory [D. E. McCumber, Phys. Rev. 136, A954 (1964)] to the calculation of excited state absorption spectra. The new technique is used to study ESA transitions from the 1G4 level in Pr3+ doped fluoride glass (ZBLAN). An ESA transition around 1380 nm is found, which shifts the peak of the gain curve for a 1.3 μm Pr3+ fiber amplifier about 10 nm to shorter wavelengths, and gives rise to negative gain for wavelengths longer than 1380 nm. Another ESA transition around 840 nm is found, which is an order of magnitude stronger than the 1 μm ground state absorption.
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42.55.-f Lasers
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.62.Fi Laser spectroscopy

Temperature dependence of long wavelength semiconductor lasers

J. O’Gorman, A. F. J. Levi, T. Tanbun‐Ek, D. L. Coblentz, and R. A. Logan

Appl. Phys. Lett. 60, 1058 (1992); http://dx.doi.org/10.1063/1.106443 (3 pages) | Cited 15 times

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We compare the temperature dependent characteristics of multiple quantum well semiconductor laser diodes and light emitting diodes operating at a wavelength, λ=1.3 μm. No model in which Auger recombination is the dominant temperature sensitive parameter can explain our experimental observations. We suggest that net gain is the appropriate temperature dependent variable which determines laser diode performance at elevated temperatures.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.60.Jb Light-emitting devices

Optical phase modulator utilizing electroabsorption in a Fabry–Perot cavity

B. Pezeshki, G. A. Williams, and J. S. Harris

Appl. Phys. Lett. 60, 1061 (1992); http://dx.doi.org/10.1063/1.106444 (3 pages) | Cited 11 times

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By changing the absorption coefficient in a Fabry–Perot cavity from a point below to a point above the critical matching condition, the phase of the reflected beam at resonance can be changed. At a constant refractive index, the phase switches by 180°. We demonstrate a device fabricated with GaAs/AlGaAs quantum wells that uses a combination of index and absorption modulation to produce a 90° phase change in a vertical Fabry–Perot cavity with an insertion loss of about 6 dB. Similar phase measurements on a conventional normally on absorption modulator yielded a chirp parameter, αc<0.4, a value superior to that of waveguide electroabsorption devices.
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42.79.Hp Optical processors, correlators, and modulators
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Sum‐frequency generation in segmented KTP waveguides

F. Laurell, J. B. Brown, and J. D. Bierlein

Appl. Phys. Lett. 60, 1064 (1992); http://dx.doi.org/10.1063/1.106445 (3 pages) | Cited 9 times

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Segmented KTP waveguides have been used to produce efficient type I sum‐frequency generation. Two Ti‐sapphire lasers, tunable between 730 and 1070 nm were used as pump sources and up‐converted radiation near four wavelengths between 390 and 480 nm was obtained. More than 2 mW of blue light was generated with 100 mW at each of the two fundamental wavelengths, which is 2–3 orders of magnitude higher output power than previously reported for guided‐wave sum‐frequency generation. Tunability up to 3 nm was achieved for the up‐converted light and an increased efficiency measured at the degeneracy point.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Nv Optical frequency converters
42.72.Bj Visible and ultraviolet sources
42.82.-m Integrated optics

Method for the local incorporation of Er into LiNbO3 guided wave optic devices by Ti co‐diffusion

D. M. Gill, Aaron Judy, L. McCaughan, and J. C. Wright

Appl. Phys. Lett. 60, 1067 (1992); http://dx.doi.org/10.1063/1.106446 (3 pages) | Cited 32 times

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Co‐diffusion of Er with Ti into LiNbO3 produces more than an order of magnitude enhancement in Er diffusivity over that achieved by ion implanting and thermal diffusion. The enhancement is dependent on the amount of Ti present. Er doped channel waveguide fabrication is completely compatible with standard Ti:LiNbO3 technology. Fluorescence measurements from co‐diffused and bulk grown Er doped LiNbO3 show that the co‐diffused Er3+ is in the LiNbO3 phase.
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42.70.-a Optical materials
42.79.Gn Optical waveguides and couplers
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
66.30.J- Diffusion of impurities

THz spectroscopy and source characterization by optoelectronic interferometry

Stephen E. Ralph and D. Grischkowsky

Appl. Phys. Lett. 60, 1070 (1992); http://dx.doi.org/10.1063/1.106447 (3 pages) | Cited 30 times

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We demonstrate a new type of THz optoelectronic interferometer, by fully characterizing a recently developed THz source to beyond 6 THz, and by measuring the absorption coefficient of high‐resistivity GaAs from 1 to 5 THz. The two source THz interferometer is driven with two 4 mW beams of 60 fs dye‐laser pulses and produces interferograms with exceptional signal‐to‐noise ratios.
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07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.60.Ly Interferometers

Kinetics of particle generation in sputtering and reactive ion etching plasmas

W. J. Yoo and Ch. Steinbrüchel

Appl. Phys. Lett. 60, 1073 (1992); http://dx.doi.org/10.1063/1.106448 (3 pages) | Cited 11 times

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Particle formation from a Si substrate in an Ar sputtering plasma and a reactive ion etching plasma of 10% CCl2F2 in Ar has been investigated by laser light scattering. The kinetics of particle growth are studied as a function of rf power and chamber pressure. Threshold behavior for particle generation has been observed with respect to rf power and pressure. In both reactive ion etching and sputtering, the smallest particles detected on the wafer are ∼0.2 μm in size. In reactive ion etching, most particles seem to have grown on the substrate itself. However, in sputtering most particles are spherical and must have been deposited from the plasma. Particle formation is correlated with redeposition in sputtering and with deposition of a surface film in reactive ion etching.
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81.65.-b Surface treatments
85.40.Hp Lithography, masks and pattern transfer

Plating‐free metal ion implantation utilizing the cathodic vacuum arc as an ion source

T. Sroda, S. Meassick, and C. Chan

Appl. Phys. Lett. 60, 1076 (1992); http://dx.doi.org/10.1063/1.106449 (3 pages) | Cited 18 times

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A plating‐free ion‐implantation system utilizing the cathodic vacuum arc as a pulsed source of metal ions has been demonstrated. This process incorporates a dc target bias and an electromagnetic ion‐separation mechanism to produce a fully ionized ion beam that is free of neutrals and macroparticles. Analysis of aluminum ions implanted into silicon using energy dispersive analysis indicates that the total implanted‐ion dose increases linearly with the number of pulses reaching a dose of 3×1014/cm2 for 650 000 pulses. An alternate analysis, utilizing a bevel‐and‐stain technique, also indicates an implanted dose that increases linearly with the number of pulses.
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61.72.uf Ge and Si
85.40.Hp Lithography, masks and pattern transfer
52.50.Dg Plasma sources

Gibbs free energy difference between the undercooled liquid and the β phase of a Ti‐Cr alloy

K. Ohsaka, E. H. Trinh, J. C. Holzer, and W. L. Johnson

Appl. Phys. Lett. 60, 1079 (1992); http://dx.doi.org/10.1063/1.106450 (3 pages) | Cited 13 times

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The heat of fusion and the specific heats of the solid and liquid have been experimentally determined for a Ti60Cr40 alloy. The data is used to evaluate the Gibbs free energy difference, ΔG, between the liquid and the β phase as a function of temperature to verify a reported spontaneous vitrification (SV) of the β phase in Ti‐Cr alloys. The results show that SV of an undistorted β phase in the Ti60Cr40 alloy at 873 K is not feasible because ΔG is positive at the temperature. However, ΔG may become negative with additional excess free energy to the β phase in the form of defects.
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64.70.K- Solid-solid transitions
61.43.Fs Glasses
61.43.-j Disordered solids
61.44.Br Quasicrystals

Study of Si(001) 2×1 domain conversion during direct current and radiative heatings

M. Ichikawa and T. Doi

Appl. Phys. Lett. 60, 1082 (1992); http://dx.doi.org/10.1063/1.106451 (3 pages) | Cited 33 times

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Si(001) 2×1 domain conversions induced by sample electric current are observed using microprobe reflection high‐energy electron diffraction. Samples are heated by using both direct current and a radiative heater. It is found that diffusion anisotropy of Si adatoms exists on 2×1 surfaces and that the domain conversion velocity is proportional to a voltage applied between the sample edges. This indicates that the conversion process is induced by the diffusion anisotropy and the electric force acting on positively charged adatoms. Minor 2×1 domain terraces always spread when the sample is heated radiatively. This preserves narrow 2×1 and 1×2 domain terraces after the conversion process and during Si growth process.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.-b Surface treatments
68.55.-a Thin film structure and morphology

Flexoelectrically controlled surface bistable switching in nematic liquid crystals

R. Barberi, M. Giocondo, and G. Durand

Appl. Phys. Lett. 60, 1085 (1992); http://dx.doi.org/10.1063/1.106452 (2 pages) | Cited 47 times

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A new bistable surface switching device using nematic liquid crystals in bookshelflike geometry is presented. The surface bistability is controlled by an external pulsed electric field of defined polarity, which breaks the surface anchoring and selects the final state from dielectric and flexoelectric couplings. A writing time of 32 μs and an optical response time of 300 μs are achieved, for a field of 18 V across a 1 μm thick cell. This simple nematic optical device presents properties directly comparable with those of ferroelectric liquid crystals displays: bistability, sharp threshold, fast address time.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
85.60.Pg Display systems
78.20.Jq Electro-optical effects

Stress and its effect on the interdiffusion in Si1−xGex/Si superlattices

S. M. Prokes, O. J. Glembocki, and D. J. Godbey

Appl. Phys. Lett. 60, 1087 (1992); http://dx.doi.org/10.1063/1.107455 (3 pages) | Cited 30 times

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Effects of stress on the interdiffusion behavior in long‐period Si0.7Ge0.3/Si is examined using x‐ray diffraction and Raman spectroscopy. Symmetrically and asymmetrically strained superlattices have been examined, and an activation energy for interdiffusion of 3.9 and 4.6 eV has been obtained, respectively. Furthermore, an enhanced interdiffusion has been measured for the asymmetrically strained superlattice when subjected to an external tensile stress during annealing. Thus, enhanced intermixing has been measured whenever the Si barrier layers experience tensile stress during annealing. In addition, Raman results confirm the enhancement of Ge diffusion into the Si barriers when annealed under tensile stress.
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68.35.Fx Diffusion; interface formation
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Room‐temperature continuous wave operation of a visible AlGaAs/InGaP transverse junction stripe laser grown by liquid phase epitaxy

L. B. Chang and L. Z. Shia

Appl. Phys. Lett. 60, 1090 (1992); http://dx.doi.org/10.1063/1.106453 (3 pages) | Cited 1 time

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Continuous wave operation of an AlGaAs/InGaP/AlGaAs transverse junction stripe (TJS) laser diode (LD) has been achieved at room temperature for the first time. It was grown on a (100) GaAs semi‐insulating (SI) substrate by liquid phase epitaxy (LPE). This device, with 100‐μm‐wide and 500‐μm long Zn diffused stripe geometry, exhibits a room‐temperature threshold current of 420 mA. The corresponding threshold current density is as low as 0.85 kA/cm2, which is the lowest value for those electroluminescent devices with an AlGaAs/InGaP/AlGaAs heterostructure. An emission peak wavelength of 615 nm and a light output power of 300 μW/facet were also reported.
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42.55.Px Semiconductor lasers; laser diodes
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
66.30.J- Diffusion of impurities

Electron focusing with a double grid in AlGaAs/GaAs heterostructures

K. Nakazato, R. I. Hornsey, R. J. Blaikie, J. R. A. Cleaver, H. Ahmed, and T. J. Thornton

Appl. Phys. Lett. 60, 1093 (1992); http://dx.doi.org/10.1063/1.106454 (3 pages) | Cited 6 times

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Electron focusing has been observed in single‐ and double‐grid structures. The magnetoresistance shows strong maxima and minima with values both above and below the zero field resistance. These are interpreted in terms of electron trajectories which are either backscattered from or transmitted through the grids, with a good match between the measured and calculated magnetic field values for the position of these peaks. The difference in magnetoresistance between the two structures is explained by an internal scattering mechanism which is present only for the double‐grid system.
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72.20.My Galvanomagnetic and other magnetotransport effects
72.80.Ey III-V and II-VI semiconductors
81.40.Rs Electrical and magnetic properties related to treatment conditions

Recombination at clean and decorated misfit dislocations

Z. J. Radzimski, T. Q. Zhou, A. Buczkowski, G. A. Rozgonyi, D. Finn, L. G. Hellwig, and J. A. Ross

Appl. Phys. Lett. 60, 1096 (1992); http://dx.doi.org/10.1063/1.106455 (3 pages) | Cited 30 times

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The electrical activity of interfacial misfit dislocations in silicon has been examined using the electron beam induced current technique in a scanning electron microscope. Clean dislocations formed during high‐temperature Si(Ge) chemical vapor epitaxy were studied. These defects were subsequently decorated with known metallic impurities (Au and Ni) by diffusion at different temperatures from a backside evaporated layer. Differences in electrical activity are discussed in relation to the detection limits of electron beam induced current technique and energy levels anticipated for the clean or decorated dislocations.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
71.55.Ht Other nonmetals
61.72.Yx Interaction between different crystal defects; gettering effect

Measurements of Al‐AlInAs Schottky barriers prepared in situ by molecular beam epitaxy

F. Gueissaz, M. Gailhanou, R. Houdré, and M. Ilegems

Appl. Phys. Lett. 60, 1099 (1992); http://dx.doi.org/10.1063/1.106456 (3 pages) | Cited 9 times

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Aluminum was deposited in situ on high crystalline quality n‐doped AlInAs grown by molecular beam epitaxy. The current versus voltage characteristics yielded an ideality factor better than 1.05. A barrier height of 0.55±0.01 eV was found, as determined from capacitance versus voltage and current versus temperature (I‐T) measurements. The agreement between the two measurements was excellent. Furthermore, evidence is given here that inhomogeneities of the crystal matrix, as observed by four crystal‐six reflection x‐ray diffraction, result in anomalous I‐T characteristics.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts

Photomodulation of photocurrent multiplication in a high gain amorphous silicon carbide film

Masahiro Hiramoto, Kanji Yoshimura, and Masaaki Yokoyama

Appl. Phys. Lett. 60, 1102 (1992); http://dx.doi.org/10.1063/1.107459 (3 pages) | Cited 5 times

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The photocurrent multiplication observed under the irradiation of bulk‐absorbed red light in amorphous silicon carbide (a‐SiC:H) films with a simple configuration SnO2/a‐SiC:H/Au cell was found to be photomodulated depressively by superimposing surface‐absorbed ultraviolet(UV)‐blue light on the red light irradiation. This phenomenon was reasonably interpreted based on the previously proposed multiplication mechanism involving the tunneling injection of electrons from an SnO2 electrode to the a‐SiC:H film through a thin SiOx insulating layer in a high electric field issued from the accumulation of trapped holes near SnO2/a‐SiC:H interface, which was effectively suppressed by the UV‐blue light irradiation.
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73.50.Pz Photoconduction and photovoltaic effects
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Fq High-field and nonlinear effects
72.80.Ng Disordered solids

Study of carrier dynamics in InP:Fe using time‐resolved infrared reflection and transmission

R. S. Miranda, H. W. K. Tom, A. M. Johnson, T. J. Bridges, and G. D. Aumiller

Appl. Phys. Lett. 60, 1105 (1992); http://dx.doi.org/10.1063/1.106458 (3 pages)

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We have studied the dynamics of photogenerated carriers in the semiconductor InP:Fe, using 2 ps time‐resolved infrared (IR) reflection and transmission. We analyze the reflection data in a new way: the transient signal is related to the Fourier transform of the injected carrier depth profile. Because of this sensitivity to the depth profile, time‐resolved IR reflection is a unique tool for studying carrier dynamics and is potentially better than visible reflection or Raman scattering. We use the sensitivity of the IR reflection here to test the validity of the standard one‐dimensional ambipolar diffusion model.
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78.47.-p Spectroscopy of solid state dynamics
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.30.Fs III-V and II-VI semiconductors

Effects of HF cleaning and subsequent heating on the electrical properties of silicon (100) surfaces

L. J. Huang and W. M. Lau

Appl. Phys. Lett. 60, 1108 (1992); http://dx.doi.org/10.1063/1.106459 (3 pages) | Cited 20 times

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Changes in surface‐band bending of both boron‐doped and phosphorus‐doped silicon (100) samples by exposure (40 s) to hydrofluoric acid (HF) with varying HF concentrations were studied by x‐ray photoelectron spectroscopy. Effects of subsequent thermal annealing was investigated by in situ heating in vacuum. Hydrogen termination of the dangling bonds on silicon was found to be an effective means to reduce surface gap states on silicon. Near‐flatband surfaces were observed on both n‐ and p‐Si by the HF exposure when the doping concentration was not less than 1×1016/cm3, and when the HF concentration was not higher than 5%. A higher HF concentration promoted hydrogen diffusion and the formation of an H‐B species in p‐Si. As such, band bending increased on p‐Si. However, the deactivation of boron could be recovered by annealing for less than 1 h at a temperature as low a 120 °C.
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73.20.At Surface states, band structure, electron density of states
81.65.-b Surface treatments
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