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6 Jul 1992

Volume 61, Issue 1, pp. 1-118

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60 GHz sources using optically driven heterojunction bipolar transistors

D. C. Scott, D. V. Plant, and H. R. Fetterman

Appl. Phys. Lett. 61, 1 (1992); http://dx.doi.org/10.1063/1.107648 (3 pages) | Cited 30 times

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Millimeter wave sources at 60 GHz have been demonstrated using optically driven heterojunction bipolar transistors configured as photodetectors. Two techniques were used to optically generate the millimeter waves; the mixing of two cw lasers and the mode locking of a semiconductor laser. The millimeter wave power generated from these two configurations was radiated into free space using integrated planar twin‐dipole antennas and heterodyne detected with signal‐to‐noise ratios ≳40 dB. As part of these experiments, the dc optical gains and quantum efficiencies of the heterojunction bipolar transistor photodetectors were determined.
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85.60.Dw Photodiodes; phototransistors; photoresistors
84.40.-x Radiowave and microwave (including millimeter wave) technology
42.82.Bq Design and performance testing of integrated-optical systems

Electro‐optic phenomena in gelatin‐based poled polymer

Z. Z. Ho, Ray T. Chen, and Robert Shih

Appl. Phys. Lett. 61, 4 (1992); http://dx.doi.org/10.1063/1.107665 (3 pages) | Cited 5 times

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An electro‐optic polymer with nitrophenol and photo lime gel has been constructed and demonstrated. The transmission spectrum of nitrophenol/gelatin shows an ultrawide optical bandwidth, from 340 to 2800 nm. A relatively stable and large electro‐optic effect, γ33=10–40 pm/V, was observed at 632.8 nm. The poling stability is attributed to the two‐dimensional cross‐linked nature of the gelatin. This result indicates that both passive and active integrated optical devices can be fabricated onto the same polymer thin film to form a fully polymer‐based miniature integrated optical circuit.
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42.70.Jk Polymers and organics
42.82.-m Integrated optics
42.79.Hp Optical processors, correlators, and modulators

Carrier‐induced change in index, gain, and lifetime for (InAs)1/(GaAs)4 superlattice lasers

N. K. Dutta, N. Chand, and J. Lopata

Appl. Phys. Lett. 61, 7 (1992); http://dx.doi.org/10.1063/1.107620 (3 pages) | Cited 4 times

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The carrier density dependence of gain, index, and carrier lifetime has been measured for (InAs)1/(GaAs)4 short‐period superlattice lasers. The 500‐μm‐long lasers have a threshold current density of 200 A/cm2 and exhibit a small carrier‐induced change in refractive index (Δn/ΔN∼2×10−22 cm3). The small Δn/ΔN also results in small linewidth enhancement factor (α∼1.1) of these lasers. The measured dependence of carrier lifetime on carrier density can be fitted to a bimolecular recombination model which suggests that radiative recombination is the dominant recombination mechanism in these structures.
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42.55.Px Semiconductor lasers; laser diodes
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Quantum well electroabsorption modulators at 1.55 μm using single‐step selective area chemical beam epitaxial growth

Y. Chen, J. E. Zucker, T. H. Chiu, J. L. Marshall, and K. L. Jones

Appl. Phys. Lett. 61, 10 (1992); http://dx.doi.org/10.1063/1.107655 (3 pages) | Cited 6 times

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We demonstrate a novel electroabsorption modulator operating at 1.55 μm fabricated by single‐step selective area chemical beam epitaxy with no post‐growth processing. The modulation depth is 14.5 dB for a voltage swing of 10 V. In addition, the modulator has a tunable absorption edge determined by the size of the growth mask opening.
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42.79.Hp Optical processors, correlators, and modulators
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Fast high‐efficiency integrated waveguide photodetectors using novel hybrid vertical/butt coupling geometry

J. B. D. Soole, Y. Silberberg, A. Scherer, H. P. LeBlanc, N. C. Andreadakis, C. Caneau, H. Schumacher, and U. Erben

Appl. Phys. Lett. 61, 13 (1992); http://dx.doi.org/10.1063/1.107645 (3 pages) | Cited 6 times

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We report a novel coupling geometry for integrated waveguide photodetectors−a hybrid vertical coupling/butt coupling scheme that allows the integration of fast, efficient, photodetectors with conventional double heterostructure waveguides. It can be employed to yield a planar, or pseudo‐planar, surface that supports further levels of integration. The approach is demonstrated with a 25‐μm‐long p‐i‐n detector integrated with an InP/InGaAsP/InP waveguide, which displays a high (∼90%) efficiency and large (∼15 GHz) bandwidth. This is the fastest high‐efficiency integrated waveguide photodetector reported to date.
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42.82.-m Integrated optics
42.79.Pw Imaging detectors and sensors
42.79.Gn Optical waveguides and couplers
85.60.Gz Photodetectors (including infrared and CCD detectors)

Low‐temperature metalorganic chemical vapor deposition of perovskite Pb(ZrxTi1−x)O3 thin films

Chien H. Peng and Seshu B. Desu

Appl. Phys. Lett. 61, 16 (1992); http://dx.doi.org/10.1063/1.107646 (3 pages) | Cited 39 times

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Pb(ZrxTi1−x)O3 thin films with perovskite structure were successfully prepared on sapphire disks, Pt/Ti/SiO2/Si, and RuOx/SiO2/Si substrates at temperatures as low as 550 °C by hot‐wall metalorganic chemical vapor deposition. Safe and stable precursors were used, namely: lead tetramethylheptadione [Pb(thd)2], zirconium tetramethylheptadione [Zr(thd)4], and titanium ethoxide. The deposition rates were in the range of 10.0 to 20.0 nm/min. The Auger electron spectroscopy (AES) depth profile showed good uniformity across the bulk of the films. The AES spectra also showed no carbon contamination in the bulk of the films. Zr/Ti ratio were easily controlled by the precursor temperatures and the flow rate of diluent gas. Optical constants were measured by a UV‐VIS‐NIR spectrophotometer. As‐deposited films were dense and showed uniform and fine grain size. The 600 °C annealed film (Pb/Zr/Ti=50/41/9) showed a spontaneous polarization of 23.3 μC/cm3 and a coercive field of 64.5 kV/cm.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology

Bilayer interference enhanced Raman spectroscopy

W. S. Bacsa and J. S. Lannin

Appl. Phys. Lett. 61, 19 (1992); http://dx.doi.org/10.1063/1.107647 (3 pages) | Cited 21 times

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A combination of the interference of incident and reflected coherent beams from a metal surface with a dielectric overlayer is calculated to yield an enhancement of the Raman signal of ultrathin adsorbed layers. The thickness of the dielectric layer is determined by optimizing the interference effect of the incident and reflected beams to enhance the electric field. In the case of SiO2/Al an interference enhancement factor of 27 is found. An experimental confirmation of this enhancement is obtained by comparing the in situ multichannel Raman signals of one monolayer C60 on an Al substrate and on a SiO2/Al bilayer. The use of the same bilayer substrate for a range of ultrathin films makes the metal‐dielectric bilayer a versatile tool to investigate a number of nanoscale systems.
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78.30.-j Infrared and Raman spectra
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Improved InP regrowth properties in metalorganic vapor phase epitaxy by addition of CCl4

N. Nordell and J. Borglind

Appl. Phys. Lett. 61, 22 (1992); http://dx.doi.org/10.1063/1.107649 (3 pages) | Cited 7 times

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Selective and planar regrowth of InP around stripe mesas up to 5.5 μm height formed with reactive ion etching in InP substrates has been made with metalorganic vapor phase epitaxy by adding CCl4 to the process gases. CCl4 seems to prevent nucleation on the phosphorous‐rich {111}B lattice planes and on the silicon‐nitride cap at the top of the mesa and hence permits reproducible regrowth with desired morphologies for integration of optoelectronic circuits at mesas oriented along the [110] direction. The addition of CCl4 does not influence dopant capability or the semi‐insulating properties of Fe‐doped material, for which a resistivity of 1×109 Ω cm has been obtained.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Physical model for defect mediated boron diffusion during rapid thermal annealing of ion implanted BF2

H. Kinoshita and D. L. Kwong

Appl. Phys. Lett. 61, 25 (1992); http://dx.doi.org/10.1063/1.107650 (3 pages) | Cited 3 times

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A diffusion model for ion implanted BF2 has been developed based on the diffusion and reactions of point defects and B. The simulation of enhanced diffusion under rapid thermal annealing condition has been accomplished for 2×1013–1.5×1015 cm−2 dose BF2 implant. The effects of implant damage, surface amorphization, and fluorine atoms on B diffusion have been investigated by using the as‐implant defect profiles obtained from Monte Carlo simulation as the initial condition. From excellent agreement between experimental and model results, we find that chemical effects of F on B diffusion in low dose BF2 implant is minimal, and for high dose BF2 implant, the surface amorphization can be modeled by modifying the point defect profile within the amorphized region.
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66.30.J- Diffusion of impurities
61.72.up Other materials
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.Bb Theories and models of crystal defects

Chemical characterization of (In,Ga)As/(Al,Ga)As strained interfaces grown by metalorganic chemical vapor deposition

J. Kim, J. J. Alwan, D. V. Forbes, J. J. Coleman, I. M. Robertson, C. M. Wayman, F. H. Baumann, M. Bode, Y. Kim, and A. Ourmazd

Appl. Phys. Lett. 61, 28 (1992); http://dx.doi.org/10.1063/1.107651 (3 pages) | Cited 10 times

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We have used quantitative chemical mapping to determine the chemical abruptness of interfaces in In0.2Ga0.8As/Al0.2Ga0.8As strained multilayers grown by metalorganic chemical vapor deposition. We observe a large difference in the interfacial width, depending on the order in which successive layers are grown; the (Al0.2Ga0.8As on In0.2Ga0.8As) interface is twice as wide as the (In0.2Ga0.8As on Al0.2Ga0.8As).  
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

In situ optical characterization of GaAs surfaces under alternating supply of GaCl and AsH3

Kenichi Nishi, Akira Usui, and Hiroyuki Sakaki

Appl. Phys. Lett. 61, 31 (1992); http://dx.doi.org/10.1063/1.107652 (3 pages) | Cited 21 times

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This letter describes the use of surface photoabsorption (SPA) measurements to characterize GaAs substrate surfaces under an alternating supply of GaCl and AsH3 in chloride atomic layer epitaxy (ALE). This characterization technique utilizes p‐polarized light incident at the Brewster angle, which virtually eliminates the bulk contribution of the reflected light. It was found that the reflection intensity varied by several percent depending on the source gas supply sequence. This reflection intensity was constant during continuous GaCl supply, which corresponded to the self‐limiting mechanism of chloride ALE. Optical reflection spectra were measured in the range of 300–800 nm during the flow of each source gas. The normalized spectra of reflection difference between GaCl and AsH3 supply depended on the incidence azimuth, which showed the existence of anisotropic surface bonds. By comparing these spectra to the reference data using triethylgallium as a Ga source, the GaAs surface under GaCl exposure was assumed to be a Ga‐stabilized surface at 520 °C.
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68.55.-a Thin film structure and morphology
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Flowing afterglow synthesis of polythiophene films

Peter Haaland and James Targove

Appl. Phys. Lett. 61, 34 (1992); http://dx.doi.org/10.1063/1.107659 (3 pages) | Cited 12 times

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Penning ionization of thiophene and 2,5‐dichlorothiophene by metastable argon in a flowing afterglow leads to the deposition of dense, uniform polythiophene films. Homogeneous kinetics have been examined using quadrupole mass spectrometry. The films have been characterized by spectroscopic ellipsometry, optical absorption, Rutherford backscattering spectrometry, and scanning force microscopy. The polymer, which has a nonlinear optical susceptibility χ(3)=10−11 esu at 602 nm, has been deposited on Si, quartz, and metal substrates.
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42.70.Jk Polymers and organics
81.15.Rs Spray coating techniques

Epitaxial growth of (011) Al on (100) Si by vapor deposition

N. Thangaraj, K. H. Westmacott, and U. Dahmen

Appl. Phys. Lett. 61, 37 (1992); http://dx.doi.org/10.1063/1.107660 (3 pages) | Cited 14 times

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The morphology, orientation relationship and interface structure of Al vapor deposited on (100) Si single‐crystal substrates were investigated by x‐ray diffraction and transmission electron microscopy. It was shown that vapor growth at room‐temperature results in a random (111) texture whereas growth at 280 °C leads to films with high‐quality (011) epitaxy and a high degree of grain boundary faceting. Due to alignment of close‐packed directions in the plane of the interface there are two orientation variants with a morphology characterized by an oriented 90° 〈011〉 mazed bicrystal structure.  
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Development of near‐bamboo and bamboo microstructures in thin‐film strips

D. T. Walton, H. J. Frost, and C. V. Thompson

Appl. Phys. Lett. 61, 40 (1992); http://dx.doi.org/10.1063/1.107661 (3 pages) | Cited 41 times

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A two‐dimensional grain growth model is used to study microstructural evolution in thin film strips. We focus on the strip’s transformation to the bamboo structure, in which individual grains transverse the width of the strip. We find that the approach to a fully bamboo structure is exponential, and that the rate of transformation is inversely proportional to the square of the strip width. When the simulation is extended to model grain boundary pinning due to grooving at grain boundary−free surface intersections, we find that there exists a maximum strip width to thickness ratio beyond which the transformation to the bamboo structure does not proceed to completion.
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61.72.Mm Grain and twin boundaries
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.Nq Composition and phase identification
68.60.Wm Other nonelectronic physical properties

Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by temperature modulation molecular beam epitaxy

M. Hong, Y. K. Chen, M. C. Wu, J. M. Vandenberg, S. N. G. Chu, J. P. Mannaerts, and M. A. Chin

Appl. Phys. Lett. 61, 43 (1992); http://dx.doi.org/10.1063/1.107662 (3 pages) | Cited 2 times

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Solid‐source molecular beam epitaxy with substrate temperature modulation has produced periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers with greatly improved performance. These lasers in a broad area geometry are under room‐temperature continuous wave operation and have low threshold current density of 300 A/cm2, high internal quantum efficiency of 91%, low internal waveguide loss of 2.2 cm−1, a reduced transverse beam divergence of 30°, and a high characteristic temperature of 187 K.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
42.60.-v Laser optical systems: design and operation

Photoluminescence of porous Si, oxidized then deoxidized chemically

A. Nakajima, T. Itakura, S. Watanabe, and N. Nakayama

Appl. Phys. Lett. 61, 46 (1992); http://dx.doi.org/10.1063/1.107663 (3 pages) | Cited 58 times

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We examined the change in photoluminescence spectra of porous Si when it is oxidized then deoxidized chemically. After both steps, photoluminescence shifted to higher frequencies and increased in intensity. These shifts to higher frequencies indicate the photoluminescence is a result of the quantum size effect. Moreover, the increase in photoluminescence intensity after oxidation suggests that termination by hydrogen on the porous Si surface does not always play a key role in the photoluminescence mechanism.
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78.55.Hx Other solid inorganic materials
81.65.-b Surface treatments

Study of electron traps in semi‐insulating gallium‐arsenide buffer layers for the suppression of backgating by the zero‐bias thermally stimulated current technique

W. S. Lau, T. C. Chong, L. S. Tan, C. H. Goo, K. S. Goh, and K. M. Lee

Appl. Phys. Lett. 61, 49 (1992); http://dx.doi.org/10.1063/1.107664 (3 pages) | Cited 6 times

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Electron traps in undoped‐GaAs epitaxial layers grown at low temperatures (<300 °C) by molecular beam epitaxy were studied by the zero‐bias thermally stimulated current technique. Four traps T1‐4 were detected in as‐grown samples. It was also found that all the traps detected can be annealed out except the T1 trap. However, the buffer layer, with or without annealing, was found to be an effective remedy for backgating in high electron mobility transistors, indicating that the T1 trap may have a much more significant role than the three shallower traps in the suppression of backgating. The T1 trap is believed to be the EL3 electron trap which is related to oxygen contamination.
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71.55.Eq III-V semiconductors
73.61.Ey III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Time‐evolved numerical simulation of a two‐dimensional electron wave packet through a quantum point contact

Akira Endoh, Shigehiko Sasa, and Shunichi Muto

Appl. Phys. Lett. 61, 52 (1992); http://dx.doi.org/10.1063/1.107666 (3 pages) | Cited 2 times

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We performed time‐evolved numerical simulation of a two‐dimensional electron wave packet through a quantum point contact using the finite difference method to simulate the diffraction phenomenon of a single electron. We found that the transmitted wave packet has diffracted subpeaks which show the following properties: (1) The traces of diffracted subpeaks start from the center of the slit entrance. (2) Lateral wave number of diffracted subpeaks is quantized. (3) The diffraction angles are determined by slit width and the initial electron wave packet energy. (4) The number of allowed diffracted subpeaks is determined by potential barrier thickness. (5) There is a delay in the motion of diffracted subpeaks due to quantization inside the slit.
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73.50.Bk General theory, scattering mechanisms
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Ns Metal-nonmetal contacts
03.65.Nk Scattering theory

On the negative differential resistance effect in high‐field semiconductor‐dielectric systems

G. Gradinaru, V. P. Madangarli, and T. S. Sudarshan

Appl. Phys. Lett. 61, 55 (1992); http://dx.doi.org/10.1063/1.107667 (3 pages) | Cited 4 times

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The active role of the dielectric in high‐field semiconductor‐dielectric systems (HFSDS) and the experimental results concerning partial and total surface flashover in HFSDS are presented. The system negative differential resistance effect by partial surface flashover is explained on the basis of a two‐channel model with an appropriate equivalent circuit correlated with the potential distribution along the semiconductor.
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85.60.Dw Photodiodes; phototransistors; photoresistors
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
72.20.Ht High-field and nonlinear effects

In0.35Ga0.65P light‐emitting diodes grown by gas‐source molecular beam epitaxy

W. Ted Masselink and Martin Zachau

Appl. Phys. Lett. 61, 58 (1992); http://dx.doi.org/10.1063/1.107668 (3 pages) | Cited 4 times

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Light‐emitting diodes with peak (300 K) emission centered at less than 590 nm have been fabricated from p‐i‐n junctions in In0.35Ga0.65P. This alloy is close to that with the largest direct band gap in the InyGa1−yP system and has lattice mismatch from the GaAs substrate of 1%. Specularly smooth surface morphology is obtained in this gas‐source MBE material through the use of a unique strained‐layer‐superlattice buffer. Diodes exhibit good rectification and good reverse breakdown characteristics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Damage accumulation during ion implantation of unstrained Si1−xGex alloy layers

T. E. Haynes and O. W. Holland

Appl. Phys. Lett. 61, 61 (1992); http://dx.doi.org/10.1063/1.107669 (3 pages) | Cited 36 times

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The growth of damage induced by ion implantation in unstrained Si1−xGex epilayers is examined as a function of epilayer composition and of implant temperature and dose rate. Relaxed, epitaxial layers having compositions x=0.15, 0.50, and 0.80 were implanted with 30Si+ ions at energies of 80–90 keV, doses of 1 and 6×1014/cm2, and temperatures between −100 and +140 °C. Damage in the implanted layers was measured by ion channeling at room temperature (RT). For RT implantation, the amount of ion‐induced damage increased with Ge fraction x at a rate much greater than expected from calculations of the displacement rate. In addition, the damage growth was suppressed in each of these alloys as the implantation temperature was increased such that over a range of ion doses, the damage yield approached zero at a temperature, T0, which increased with the Ge fraction, x. Furthermore, the damage was found to become strongly dependent on the dose rate at elevated implantation temperatures near T0. Based upon comparisons to a simple model, these observations suggest that increasing the Ge fraction progressively reduces the mobilities of primary defects within the collision cascades.
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61.80.Jh Ion radiation effects
61.72.uf Ge and Si
61.72.Bb Theories and models of crystal defects

Observation of the fractional quantum Hall effect in Si/SiGe heterostructures

S. F. Nelson, K. Ismail, J. J. Nocera, F. F. Fang, E. E. Mendez, J. O. Chu, and B. S. Meyerson

Appl. Phys. Lett. 61, 64 (1992); http://dx.doi.org/10.1063/1.107670 (3 pages) | Cited 46 times

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We have observed the fractional quantum Hall effect in the magnetotransport properties of a two‐dimensional electron gas in an n‐type Si/SiGe heterostructure. The effect was observed for filling factors ν=2/3 and ν=4/3 in samples whose mobilities at 1.4 K ranged from 37 000 to 85 000 cm2/V s.
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73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Dn Low-field transport and mobility; piezoresistance

Ultrafast carrier capture and long recombination lifetimes in GaAs quantum wires grown on nonplanar substrates

J. Christen, M. Grundmann, E. Kapon, E. Colas, D. M. Hwang, and D. Bimberg

Appl. Phys. Lett. 61, 67 (1992); http://dx.doi.org/10.1063/1.107671 (3 pages) | Cited 43 times

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The recombination kinetics of the quasi‐one‐dimensional (1D) carriers confined in quantum wires grown by organometallic chemical vapor deposition on nonplanar, patterned substrates is reported for the first time. Due to the small (240 nm) wire spacing, excited carriers are efficiently captured into the wires on a sub‐ps time scale. The radiative recombination lifetime of the captured 1D carriers is longer than 310 ps. Time‐resolved cathodoluminescence spectra directly monitor thermalization of the carriers within the wire.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Bistable hot electron transport in InP/GaInAs composite collector heterojunction bipolar transistors

D. Ritter, R. A. Hamm, A. Feygenson, H. Temkin, M. B. Panish, and S. Chandrasekhar

Appl. Phys. Lett. 61, 70 (1992); http://dx.doi.org/10.1063/1.107672 (3 pages) | Cited 16 times

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The transport mechanism of electrons across an energy barrier in the collector of a heterojunction bipolar transistor is studied and identified as hot electron thermionic emission. Bistability between tunneling and thermionic emission was observed at 77 K and room temperature. The bistability can be suppressed by n‐type doping of the heterointerface vicinity.
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85.30.Pq Bipolar transistors
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Doping mechanisms of tin‐doped indium oxide films

Yuzo Shigesato, Yasuo Hayashi, and Takeshi Haranoh

Appl. Phys. Lett. 61, 73 (1992); http://dx.doi.org/10.1063/1.107673 (3 pages) | Cited 36 times

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The polycrystalline Sn‐doped In2O3 (ITO) films with different Sn concentrations of 0–6.7 wt% (SnO2 wt%) were prepared by postannealing the amorphous ITO films deposited by highly dense plasma‐assisted EB evaporation at the low substrate temperature. These films were confirmed to show the high crystallinity and homogeneous Sn distribution by x‐ray diffraction (XRD), scanning electron microscopy, and electron spectroscopy for chemical analysis. The detail XRD pattern of 1.9 wt% Sn concentration film showed the doublet peaks, indicating that the film structure was the mixture of two different lattice parameters (LP); one was +0.18% larger and another was −0.13% smaller than the In2O3 LP, which could be attributed to the interstitial and the substitutional Sn atoms, respectively.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
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