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14 Sep 1992

Volume 61, Issue 11, pp. 1257-1360

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Er‐diffused Ti:LiNbO3 waveguide laser of 1563 and 1576 nm emission wavelengths

P. Becker, R. Brinkmann, M. Dinand, W. Sohler, and H. Suche

Appl. Phys. Lett. 61, 1257 (1992); http://dx.doi.org/10.1063/1.107610 (3 pages) | Cited 61 times

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The first continuous wave (cw) and pulsed mode operation of an Er‐diffused Ti:LiNbO3 monomode waveguide laser at 1563 nm (E⊥ c) and 1576 nm (E∥ c) wavelengths is reported. A tunable Tl:KCl color center laser was used as a pump source. With π‐polarized (Ep∥ c) pump radiation of 1479 nm wavelength an oscillation threshold of 13 mW coupled pump power was achieved for the 1576 nm emission line. Above 25 mW pump power additional lasing at 1563 nm wavelength was observed. σ‐polarized (Ep⊥ c) pumping led to a single line emission at 1563 nm throughout with the highest cw output power of 3 mW and a slope efficiency of 3%. Time averaged emission linewidths of about 0.6 nm were measured for both wavelengths at about two times the threshold pump power level. With pulsed excitation of about 1 W coupled peak power output pulses of up to 200 mW peak power were measured.
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42.82.Bq Design and performance testing of integrated-optical systems
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.-v Laser optical systems: design and operation

Shaping of wide bandwidth 20 femtosecond optical pulses

D. H. Reitze, A. M. Weiner, and D. E. Leaird

Appl. Phys. Lett. 61, 1260 (1992); http://dx.doi.org/10.1063/1.107611 (3 pages) | Cited 21 times

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We investigate the propagation of 20 fs pulses through a generalized pulse shaper/compressor and synthesize shaped waveforms with 20 fs features by linear spectral filtering using a generalized pulse shaper consisting of gratings and reflective optics. The use of reflective optics in the pulse shaper avoids cubic phase dispersion associated with lenses which significantly broaden short 20 fs pulses. As an example of our pulse‐shaping capabilities, we generate pulse trains with repetition rates in excess of 12 THz using phase‐only filtering.
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42.79.Ci Filters, zone plates, and polarizers
42.79.Fm Reflectors, beam splitters, and deflectors
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Observation of third‐order intersubband dc Kerr effect at the midinfrared wavelengths in GaAs quantum wells

A. Sa’ar, N. Kuze, J. Feng, I. Gravé, and A. Yariv

Appl. Phys. Lett. 61, 1263 (1992); http://dx.doi.org/10.1063/1.107612 (3 pages) | Cited 15 times

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We report on the first observation of third‐order intersubband nonlinearities in a quantum well structure. We have measured the dc Kerr effect in a symmetric quantum well and found that the Kerr coefficients due to intersubband transitions are six orders of magnitude larger than that of bulk GaAs. To our best knowledge this is the largest value ever measured for the third‐order susceptibility. By including dc screening effects and evaluating the internal electric field in the well, a good agreement between the calculated coefficients and the experimental ones was found.  
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42.65.An Optical susceptibility, hyperpolarizability
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.20.Ls Magneto-optical effects

High‐resolution study of stimulated emission from blue‐green laser diodes

Z. Yu, J. Ren, B. Sneed, K. A. Bowers, K. J. Gossett, C. Boney, Y. Lansari, J. W. Cook, J. F. Schetzina, G. C. Hua, and N. Otsuka

Appl. Phys. Lett. 61, 1266 (1992); http://dx.doi.org/10.1063/1.107613 (3 pages) | Cited 18 times

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The first high‐resolution study of emission spectra from ZnSe‐based blue‐green laser diodes is reported.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation
78.45.+h Stimulated emission

Planar, low‐loss optical waveguides fabricated by solid‐phase regrowth

W. Xia, L. S. Yu, Z. F. Guan, S. A. Pappert, P. K. L. Yu, S. S. Lau, S. A. Schwarz, M. A. A. Pudensi, L. T. Florez, and J. P. Harbison

Appl. Phys. Lett. 61, 1269 (1992); http://dx.doi.org/10.1063/1.107614 (3 pages) | Cited 6 times

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Planar, low‐loss AlGaAs/GaAs waveguides have been fabricated using the solid‐phase regrowth (SPR) process. Single‐mode waveguide with a propagation loss as low as 1.6 dB/cm have been obtained. This process requires only thin‐film deposition and low‐temperature short‐duration annealing (i.e., 650 °C for 30 s), thus making the SPR method a much simplified technique to induce compositional disordering. Simultaneous electrical isolation and compositional disordering are also demonstrated with the SPR process.
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42.79.Gn Optical waveguides and couplers
68.55.-a Thin film structure and morphology
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

High‐power spatially coherent operation of unstable resonator semiconductor lasers with regrown lens trains

Swaminathan T. Srinivasan, Christian F. Schaus, Shang‐Zhu Sun, Eric A. Armour, Stephen D. Hersee, John G. McInerney, Alan H. Paxton, and David J. Gallant

Appl. Phys. Lett. 61, 1272 (1992); http://dx.doi.org/10.1063/1.107615 (3 pages) | Cited 15 times

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We have obtained high‐power spatially coherent operation in wide‐stripe InGaAs/GaAs/AlGaAs semiconductor lasers using a monolithic unstable resonator [consisting of diverging lens elements incorporated above an asymmetric graded‐index separate confinement heterostructure (AGRIN‐SCH)]. The fabrication involves MOCVD regrowth after wet‐chemical etching of lens‐like patterns in a GaAs layer above the active region. Pulsed output powers of 175 and 490 mW have been obtained in 170‐ and 100‐μm‐wide lasers, respectively, with spatial coherence in the near field exceeding 60%. We observe good lateral mode discrimination up to 3.5 times threshold in the 100‐μm stripes with a round‐trip magnification of 6.4.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

The Born approximation in the problem of elastic wave scattering by a spherical inhomogeneity in a fluid‐saturated porous medium

Boris Gurevich, Ada P. Sadovnichaja, Serge L. Lopatnikov, and Serge A. Shapiro

Appl. Phys. Lett. 61, 1275 (1992); http://dx.doi.org/10.1063/1.108468 (3 pages) | Cited 6 times

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The Born approximation is applied to the problem of scattering of elastic waves by a small (compared to the wavelength of the fast compressional wave) spherical porous inclusion placed in another porous medium described by the low‐frequency version of Biot’s theory. The results depend significantly on the ratio of the wavelength of slow compressional wave to the inhomogeneity size. For small values of this ratio results are in accordance with exact results of Berryman [J. Math. Phys. 26, 1408 (1985)]. In the opposite case new results are obtained and used to calculate compressional wave attenuation in a porous medium containing randomly distributed inclusions. The frequency dependence of attenuation is found to be in agreement with the results for randomly layered porous materials.
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43.20.+g General linear acoustics
62.30.+d Mechanical and elastic waves; vibrations

Observation of sol‐gel solid phase epitaxial growth of ferroelectric Pb(Nb,Zr,Ti)O3 thin films on sapphire

C. K. Barlingay and S. K. Dey

Appl. Phys. Lett. 61, 1278 (1992); http://dx.doi.org/10.1063/1.107616 (3 pages) | Cited 16 times

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This letter reports and discusses the observation of sol‐gel solid phase epitaxy (SPE) of (110) Pb0.99Nb0.02(Zr0.52Ti0.48)0.98O3 or PNZT(2/52/48) on 3 in. diam (0112) sapphire. The epitaxial nature (with at least single crystal‐like texture) of these films was ascertained by HRTEM and x‐ray diffraction studies, including pole figure analysis. Such PNZT thin films (0.6 μm) were transparent to wavelengths between 0.4 and 5.6 μm, and exhibited an optical band gap and a refractive index (at 0.6328 μm), of 3.6 eV and 2.5–2.6, respectively.
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77.55.-g Dielectric thin films
81.15.Np Solid phase epitaxy; growth from solid phases
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Laser‐induced hole‐burning and flow visualization in the cloud of products of detonated lead azide

Y. Tzuk, I. Bar, and S. Rosenwaks

Appl. Phys. Lett. 61, 1281 (1992); http://dx.doi.org/10.1063/1.107617 (3 pages) | Cited 3 times

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Utilizing a pulsed beam of a Nd:YAG laser, hole burning through the opaque cloud of products formed following the detonation of lead azide is demonstrated. The characteristics of the hole and of the expanding cloud are monitored in real time by a HeNe beam and by high‐speed framing photography. The hole is carried with the cloud and propagates at a constant velocity of 0.5–2.8 km/s, depending on the time and location of burning. The hole burning is a result of eliminating solid particles from the cloud. The application of a laser to burn a hole in the detonation products from a solid explosive is demonstrated for the first time. This technique may serve as a method for flow visualization in an aerosol medium.
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47.40.-x Compressible flows; shock waves
42.62.-b Laser applications

Infrared Raman study of the phonon linewidth and the nondiamond carbon phase in 〈110〉 and 〈100〉 textured polycrystalline diamond films

J. Wagner, C. Wild, W. Müller‐Sebert, and P. Koidl

Appl. Phys. Lett. 61, 1284 (1992); http://dx.doi.org/10.1063/1.107566 (3 pages) | Cited 12 times

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Raman spectroscopy has been used to study the width of the 1332 cm−1 phonon line and the relative intensity of scattering from nondiamond carbon in 〈110〉 and 〈100〉 textured diamond films prepared by low pressure chemical vapor deposition. Infrared excitation at 1.16 eV has been used to give a high sensitivity to amorphous graphitelike carbon inclusions in diamond films. For 〈110〉 textured films a narrowing of the phonon linewidth is observed with decreasing intensity of scattering from amorphous carbon. Films with vanishing Raman scattering from nondiamond carbon, even under infrared excitation, exhibit the narrowest phonon linewidth of about 4 cm−1. For 〈100〉 textured films also a comparatively narrow phonon linewidth is observed in spite of the strong Raman signal from nondiamond carbon. This can be explained by defective growth sectors terminated by {111} facets which surround the almost perfect 〈100〉 columns.
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78.30.Hv Other nonmetallic inorganics
63.20.-e Phonons in crystal lattices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Diamond crystallite formation on Si(100) from the gas phase: Seeding or heterogeneous nucleation?

E. Molinari, R. Polini, and M. Tomellini

Appl. Phys. Lett. 61, 1287 (1992); http://dx.doi.org/10.1063/1.107567 (3 pages) | Cited 10 times

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Well separated particles of diamond have been obtained on Si(100) surface by the hot filament chemical vapor deposition technique after scratching by diamond paste. Consecutive depositions, one at a higher and one at lower temperature, or at different CH4 contents of the gas mixture, together with a kinetic analysis based on the particle size distribution function, allow one to decide about the relative importance of heterogeneous nucleation and of seeding.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.10.Aj Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition

J. Narayan, P. Tiwari, X. Chen, J. Singh, R. Chowdhury, and T. Zheleva

Appl. Phys. Lett. 61, 1290 (1992); http://dx.doi.org/10.1063/1.107568 (3 pages) | Cited 121 times

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We report epitaxial growth of TiN films having low resistivity on (100) silicon substrates using pulsed laser deposition method. The TiN films were characterized using x‐ray diffraction, Rutherford backscattering, four‐point‐probe ac resistivity, high resolution transmission electron microscopy and scanning electron microscopy techniques and epitaxial relationship was found to be 〈100〉 TiN ∥ 〈100〉 Si. TiN films showed 10%–20% channeling yield. In the plane, four unit cells of TiN match with three unit cells of silicon with less than 4.0% misfit. This domain matching epitaxy provides a new mechanism of epitaxial growth in systems with large lattice misfits. Four‐point‐probe measurements show characteristic metallic behavior of these films as a function of temperature with a typical resistivity of about 15 μΩ cm at room temperature. Implications of low‐resistivity epitaxial TiN in silicon device fabrication are discussed.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase

Surface morphology of related GexSi1−x films

J. W. P. Hsu, E. A. Fitzgerald, Y. H. Xie, P. J. Silverman, and M. J. Cardillo

Appl. Phys. Lett. 61, 1293 (1992); http://dx.doi.org/10.1063/1.107569 (3 pages) | Cited 113 times

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We have investigated the surface morphology of relaxed, compositionally graded GexSi1−x structures, to illustrate the influence of defect‐related strain fields on film growth. Quantitative topographic measurements via scanning force microscopy show that the roughness associated with the cross‐hatch patterns, due to underlying misfit dislocations beneath the surface, increases as the final Ge concentration or the grading rate increases. We further show that strain fields arising from the termination of threading dislocations at the surface result in shallow depressions.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Role of Coulomb repulsion in 4f orbitals in electrical excitation of rare‐earth impurities in semiconductors

T. Tiedje, K. M. Colbow, Y. Gao, J. R. Dahn, J. N. Reimers, and D. C. Houghton

Appl. Phys. Lett. 61, 1296 (1992); http://dx.doi.org/10.1063/1.107570 (2 pages) | Cited 6 times

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The role of the on‐site Coulomb repulsion energy in the electrical excitation of rare‐earth ions by minority carrier injection in semiconductors is examined. Resonant photoemission measurements of the interfacial electronic energy level alignment in NdF3/silicon heterojunctions show that the large Coulomb repulsion energy of the atomiclike 4f orbitals prevents the direct excitation of the 4f levels by either electron or hole capture.
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78.60.Fi Electroluminescence
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
71.55.Ht Other nonmetals

Silicon epitaxy from silane by atmospheric‐pressure chemical vapor deposition at low temperatures

P. D. Agnello, T. O. Sedgwick, K. C. Bretz, and T. S. Kuan

Appl. Phys. Lett. 61, 1298 (1992); http://dx.doi.org/10.1063/1.107571 (3 pages) | Cited 3 times

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Epitaxial silicon has been grown in an ultraclean system at atmospheric pressure and low temperatures (650–750 °C) using silane as a Si source in a He carrier gas. The depositions were nonselective (blanket) and demonstrate the broad capabilities of the low‐temperature atmospheric‐pressure growth apparatus that has previously been used for selective deposition of Si and SiGe from dichlorosilane (DCS) in H2. n‐type doping using PH3 was also carried out and doping levels exceeding 1×1020/cm3 were obtained. However, abrupt doping pulses, as have been obtained for Si growth from DCS in the same temperature regime, were not achieved. In addition, PH3 was found to diminish the growth rate and degrade the crystal quality of the layers. The films grown from silane exhibited higher levels of oxygen at the interface between the epitaxial layer and the substrate than did films grown from DCS in the same temperature range. However, high quality films, free from extended defects, as determined by transmission electron microscopy (TEM), could still be achieved.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Nonlinear optical absorption and dynamics in quantum wells

Min Jiang, Hailin Wang, and Duncan G. Steel

Appl. Phys. Lett. 61, 1301 (1992); http://dx.doi.org/10.1063/1.107572 (3 pages) | Cited 3 times

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We present measurements of differential transmission and four‐wave mixing in GaAs quantum well structures at 1.8 K near the inhomogeneously broadened lowest heavy‐hole (hh1) exciton resonance using narrow band cw excitation. The data show an increase in absorption and an excitation lifetime of order 1–10 μs outside the spectral hole produced by the pump. The long lifetime and the experimentally determined absence of excitation spatial diffusion in this region suggests that optical absorption produces electron‐hole pairs that are correlated but separately localized due to disorder. A phenomenological model is proposed to explain the nonlinear response based on two‐photon absorption.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
71.35.-y Excitons and related phenomena
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Spectroscopic ellipsometry of epitaxial Si {100} surfaces

V. Nayar, W. Y. Leong, C. Pickering, A. J. Pidduck, R. T. Carline, and D. J. Robbins

Appl. Phys. Lett. 61, 1304 (1992); http://dx.doi.org/10.1063/1.107573 (3 pages) | Cited 12 times

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The dielectric spectra of Si {111} and Si {100} orientations are shown to be equivalent using ex situ spectroscopic ellipsometry on clean epitaxial surfaces. The peak values for the real and imaginary parts (ϵr, i) of the dielectric function exceed those previously reported, values of ϵi (at 4.25 eV)≥47 being obtained. Surface features with lateral scales of ≊0.5–2 μm, do not affect the dielectric spectra significantly. The high dielectric function peaks indicate that the nanometer lateral‐scale roughness on these epitaxial surfaces is very small.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
73.20.At Surface states, band structure, electron density of states
81.15.Kk Vapor phase epitaxy; growth from vapor phase

2×n surface structure of SiGe layers deposited on Si(100)

R. Butz and S. Kampers

Appl. Phys. Lett. 61, 1307 (1992); http://dx.doi.org/10.1063/1.107574 (3 pages) | Cited 28 times

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The surface structure of SiGe layers deposited on Si(100) has been studied by surface analysis techniques. The 2×1 surface reconstruction is changed into a 2×n (n≳8) structure observed in low energy electron diffraction. Scanning tunneling microscopy pictures reveal that after (n−1) subsequent dimers one dimer is missing. The density of missing dimers depends on the Ge content and on the layer thickness. Auger electron spectra show a strong Ge segregation. The evaluation of the intensities of low energy electron diffraction can explain the structure by a small expansion of the topmost SiGe layer enriched by Ge.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Anomalous diffusion of fluorine in silicon

S.‐P. Jeng, T.‐P. Ma, R. Canteri, M. Anderle, and G. W. Rubloff

Appl. Phys. Lett. 61, 1310 (1992); http://dx.doi.org/10.1063/1.107575 (3 pages) | Cited 42 times

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The diffusion of ion implanted F in Si has been studied by the use of secondary ion mass spectroscopy and thermal desorption spectroscopy. In the dose range studied (below amorphization threshold), F exhibits an anomalous out‐diffusion behavior which is characterized by the depletion of F in Si substrate at temperatures ≥550 °C with complete suppression of diffusion deeper into the bulk of Si. F species which migrate to the surface react with native oxide and Si to form volatile Si oxyfluoride and Si fluoride, which then evaporate from the surface. There is clear evidence that the formation of Si oxyfluoride correlates strongly with the thermally activated anomalous migration of F. While the driving force for the anomalous F migration has not yet been identified, it appears that the electric field is not a dominant mechanism.
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61.72.uf Ge and Si
66.30.J- Diffusion of impurities

Rapid thermal oxidation of thin nitride dielectrics deposited on rapid thermal nitrided polycrystalline silicon

S. Itoh, G. Q. Lo, D. L. Kwong, V. K. Mathews, and P. C. Fazan

Appl. Phys. Lett. 61, 1313 (1992); http://dx.doi.org/10.1063/1.107576 (3 pages)

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This letter compares the effects of two different oxidation techniques, i.e., rapid thermal and conventional wet (steam) oxidations, on the dielectric breakdown and charge trapping characteristics of thin Si3N4 films deposited on rapid thermally nitrided polycrystalline silicon. Results show that, in addition to the low thermal budget, rapid‐thermal‐oxidized Si3N4 shows superior time‐dependent dielectric breakdown characteristics in terms of reduced defect densities and improved film intrinsic properties. Compared to wet‐oxidized dielectrics, suppressed charge trapping is observed for rapid‐thermal‐oxidized Si3N4 stacked dielectrics.
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85.40.Hp Lithography, masks and pattern transfer
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
77.22.Jp Dielectric breakdown and space-charge effects

Silicon heterojunction bipolar power transistor with an amorphous Si:B alloy emitter

X.‐H. Li, J. R. A. Carlsson, M. Johansson, B. Ekström, S. F. Gong, and H. T. G. Hentzell

Appl. Phys. Lett. 61, 1316 (1992); http://dx.doi.org/10.1063/1.107577 (3 pages) | Cited 9 times

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A pnp Si heterojunction bipolar power transistor has been fabricated using an amorphous Si0.7B0.3 alloy as a wide band‐gap emitter. The amorphous alloy is formed by co‐deposition of B and Si: it has a low resistivity of 2.5×10−3 Ω cm at room temperature after annealing at 1000 °C for 30 min and a band gap of 1.70 eV when annealed at 1100 °C for 20 min. In order to make a direct comparison, a conventional transistor with a diffused emitter and a polycrystalline silicon (poly‐Si) emitter transistor have also been fabricated. It is shown that an amorphous Si0.7B0.3 alloy emitter transistor can have an electrical current gain 2–5 times higher than a poly‐Si emitter transistor and 20 times higher than a conventional transistor.  
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85.30.Pq Bipolar transistors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Strain‐induced lateral carrier confinement in quantum wells grafted onto nonplanar substrates

Winston K. Chan, T. S. Ravi, K. Kash, Jürgen Christen, Thomas J. Gmitter, Leigh T. Florez, and James P. Harbison

Appl. Phys. Lett. 61, 1319 (1992); http://dx.doi.org/10.1063/1.107578 (3 pages) | Cited 2 times

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We remove a thin semiconductor film from its growth substrate and reattach it to a nonplanar host substrate. The film is under a large, localized bending stress. In a GaAs/AlGaAs film with a quantum well near one surface where the bending strain is greatest, carriers are laterally confined by the strain to regions where the band gap is red‐shifted by up to 62 meV.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Reduction of recombination‐enhanced diffusion of Be in InGaAs strained layer

Masashi Uematsu and Kazumi Wada

Appl. Phys. Lett. 61, 1322 (1992); http://dx.doi.org/10.1063/1.107579 (2 pages) | Cited 7 times

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An InGaAs strained layer introduced into the p‐n junction of Esaki tunnel diodes has been found to reduce the current‐induced degradation of the diodes, that is, recombination‐enhanced impurity diffusion (REID) of Be. The Be REID coefficients for diodes with the InGaAs strained layer are about two orders of magnitude smaller than those without the strained layer. This suggests that the strained layer reduces the recombination‐enhanced process, which is consistent with the results for InGaAs strained‐layer lasers.
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66.30.J- Diffusion of impurities
85.30.Kk Junction diodes
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

High frequency characteristics of in‐plane‐gate transistors

J. S. McLean, A. D. Wieck, M. Bleder, and K. Ploog

Appl. Phys. Lett. 61, 1324 (1992); http://dx.doi.org/10.1063/1.107580 (2 pages) | Cited 12 times

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Directly written in‐plane‐gate (IPG) field effect transistors fabricated using focused ion beams have been proposed and measurements of their dc characteristics have been made. Here, we present for the first time ac measurements up to high frequencies on these transistors. The measurements are made using a direct wafer probing technique. While parasitic elements adversely affect the high frequency operation of the current generation of the IPG transistor, promising results have been obtained. We measure a transconductance of 20 μS which is essentially independent of frequency up to 1 GHz.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Fast turn‐off of two‐terminal double‐heterojunction optical thyristors

P. L. Heremans, M. Kuijk, G. Borghs, D. A. Suda, R. E. Hayes, and R. Vounckx

Appl. Phys. Lett. 61, 1326 (1992); http://dx.doi.org/10.1063/1.107581 (3 pages) | Cited 5 times

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A double‐heterojunction optical thyristor is presented, that can be turned off in a few nanoseconds simply by using the anode to a negative voltage exceeding a certain threshold. Previously, nanosecond‐range turn‐off could only be achieved by carrier extraction via contacts to either or both of the center two thyristor layers. Our turn‐off method uses a PnpN layer structure for which punch‐through of the n‐layer under reverse bias of the P‐n diode can be reached before this diode breaks down. We thus achieve an improvement in turn‐off time by about 3 orders of magnitude over traditional two‐terminal thyristors.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors
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