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21 Sep 1992

Volume 61, Issue 12, pp. 1369-1473

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Improved optical transmission of KTiOPO4 crystals through cerium‐doping and oxygen annealing

P. F. Bordui, R. Blachman, and R. G. Norwood

Appl. Phys. Lett. 61, 1369 (1992); http://dx.doi.org/10.1063/1.107540 (3 pages) | Cited 8 times

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KTiOPO4 single crystals were grown from cerium‐doped potassium phosphate fluxes. Cerium‐doped crystals exhibited increased optical transmission relative to undoped material from the UV band edge to roughly 800 nm. Oxygen annealing was performed on undoped and cerium‐doped crystals. The effects on transmission of oxygen annealing were qualitatively similar to those brought about by cerium doping although roughly five times smaller in magnitude. Cerium doping had no observable influence on the nonlinear optical coefficients but altered slightly the crystal’s birefringence.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
81.40.Tv Optical and dielectric properties related to treatment conditions
61.72.up Other materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Terahertz pulses from semiconductor‐air interfaces

J. E. Pedersen, I. Balslev, J. M. Hvam, and S. R. Keiding

Appl. Phys. Lett. 61, 1372 (1992); http://dx.doi.org/10.1063/1.107541 (3 pages) | Cited 1 time

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We report an unexpected observation of strong terahertz pulses, radiated perpendicular to semiconductor‐air interfaces illuminated by femtosecond laser pulses at normal incidence. Symmetry arguments preclude radiation emitted strictly along the direction of the surface electric field and the dipoles, normal to the interface. We attribute our observations to the strong interface‐induced angular redistribution of the radiation being collected by a small dielectric lens. For detection, a small symmetry breaking displacement within the terahertz diffraction spot is sufficient.
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79.20.Ds Laser-beam impact phenomena
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.47.-p Spectroscopy of solid state dynamics
73.25.+i Surface conductivity and carrier phenomena

Interferometric ring diode lasers

J. P. Hohimer, G. A. Vawter, D. C. Craft, and G. R. Hadley

Appl. Phys. Lett. 61, 1375 (1992); http://dx.doi.org/10.1063/1.107542 (3 pages) | Cited 8 times

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We report the first demonstration of interferometric ring diode lasers. These devices show a sharply peaked light versus current curve with cw output powers up to 8 mW. The output emission is single‐frequency with side‐mode‐rejection ratios up to 30 dB.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Generation of ultralong pulse ArF emission in dynamic mixtures of He plasma jet with Ar/F2 neutral gas

F. Sato, Y. Sunada, S. Okamoto, and F. Kannari

Appl. Phys. Lett. 61, 1378 (1992); http://dx.doi.org/10.1063/1.107543 (3 pages) | Cited 2 times

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Ultralong pulse (≳40 μs) fluorescence of ArF excimer molecules at 193 nm has been generated by dynamically mixing a pulse discharge excited He jet with neutral Ar/F2 gas located downstream in a vacuum chamber. Rapid cooling of the high temperature He plasma through neutral gas collisions and efficient energy transfer to Ar gas create Ar metastable atoms, which form ArF excimer molecules through harpoon reactions with F2, in relatively field‐free space. The fluorescence intensity increased with increasing F2 concentration up to ∼10% F2 in Ar with 2‐atm backing pressure. In a preliminary experiment with an ArF probe laser, this mixture showed an amplification gain.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
34.50.-s Scattering of atoms and molecules

Giant enhancement of luminescence intensity in Er‐doped Si/SiO2 resonant cavities

E. F. Schubert, A. M. Vredenberg, N. E. J. Hunt, Y. H. Wong, P. C. Becker, J. M. Poate, D. C. Jacobson, L. C. Feldman, and G. J. Zydzik

Appl. Phys. Lett. 61, 1381 (1992); http://dx.doi.org/10.1063/1.107544 (3 pages) | Cited 52 times

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Si/SiO2 Fabry–Pérot microcavities with rare‐earth‐doped SiO2 active regions are realized for the first time. Cavity‐quality factors exceeding Q=300 are achieved with structures consisting of two Si/SiO2 distributed Bragg reflectors and an Er‐implanted (λ/2) SiO2 active region. The room‐temperature photoluminescence intensity of the on‐axis emission is 1–2 orders of magnitude higher for resonant cavity structures as compared to structures without a cavity.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.66.-w Optical properties of specific thin films
78.55.Hx Other solid inorganic materials

Thermal imaging by ordered bundles of silver halide crystalline fibers

Idan Paiss and Abraham Katzir

Appl. Phys. Lett. 61, 1384 (1992); http://dx.doi.org/10.1063/1.107545 (3 pages) | Cited 7 times

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Flexible bundles consisting of 70–2000 silver halide optical fibers were fabricated by extrusion of crystalline preforms. Such devices transmit in the mid‐IR spectral region (4–20 μm), and are suitable for delivering thermal images of near room‐temperature objects. Small diameter (1–3 mm) image guides of this type can thus map the temperature distribution of areas difficult to access by conventional devices. The fabrication of these guides, their optical properties, and their imaging capability are discussed.
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42.81.Bm Fabrication, cladding, and splicing
42.81.Pa Sensors, gyros
42.81.Qb Fiber waveguides, couplers, and arrays
42.30.-d Imaging and optical processing

Molecular beam epitaxy growth of vertical cavity optical devices with in situ corrections

K. Bacher, B. Pezeshki, S. M. Lord, and J. S. Harris

Appl. Phys. Lett. 61, 1387 (1992); http://dx.doi.org/10.1063/1.107546 (3 pages) | Cited 21 times

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We demonstrate a novel approach to the molecular beam epitaxial (MBE) growth of vertical Fabry–Perot cavities with quarter‐wave mirrors. At two selected points, the growth is interrupted and the reflectivity spectrum is measured without removing the wafer from the vacuum system. Corrections are then made in the growth of subsequent layers. By making measurements on the incomplete structure, separate corrections can be made to center both the mirror reflectivity and the cavity resonance at the desired wavelength. We present theoretical and experimental data demonstrating the effectiveness of the approach, and estimate the effects on device performance.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Epitaxial Pt(001), Pt(110), and Pt(111) films on MgO(001), MgO(110), MgO(111), and Al2O3(0001)

B. M. Lairson, M. R. Visokay, R. Sinclair, S. Hagstrom, and B. M. Clemens

Appl. Phys. Lett. 61, 1390 (1992); http://dx.doi.org/10.1063/1.107547 (3 pages) | Cited 64 times

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We have grown epitaxial Pt films, both in oxidizing and nonoxidizing environments, using planar magnetron sputtering onto heated substrates. The out‐of‐plane orientation relationships we report are Pt(001)∥MgO(001), Pt(110)∥MgO(110), Pt(111)∥MgO(111), and Pt(111)∥Al2O3(0001). We also report a seeded epitaxy technique using Fe for lower temperature epitaxial growth of Pt(001)∥MgO(001).
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Cd Deposition by sputtering

Growth kinetics of (100), (110), and (111) homoepitaxial diamond films

C. J. Chu, R. H. Hauge, J. L. Margrave, and M. P. D’Evelyn

Appl. Phys. Lett. 61, 1393 (1992); http://dx.doi.org/10.1063/1.107548 (3 pages) | Cited 67 times

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We present the first investigation of the growth kinetics of diamond films grown homoepitaxially by hot‐filament chemical vapor deposition on (100), (110), and (111) natural diamond substrates. Growth rates on the various faces exhibited different functional dependencies on CH4 flow rate, being linear on (100), slightly sublinear on (110), and sigmoidal on (111). The temperature dependence of the growth rate was also crystal‐face‐dependent, yielding effective activation energies of 8±3, 18±2, and 12±4 kcal/mol for [100], [110], and [111] growth, respectively, at substrate temperatures between 735 and 970 °C. The apparent activation energies were considerably larger at substrate temperatures between 675 and 735 °C. We propose that these crystal face and temperature effects are due principally to differences and changes in the nanometer‐scale morphology and surface hydrogen coverage with methane concentration and surface temperature.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Silicon epitaxy grown by electron‐beam evaporation in ultrahigh vacuum at 200 °C

Yung‐Jen Lin and Tri‐Rung Yew

Appl. Phys. Lett. 61, 1396 (1992); http://dx.doi.org/10.1063/1.107549 (3 pages)

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Silicon epitaxial growth at 200 °C is reported in this letter. The epitaxy was grown by electron‐beam evaporation in an ultrahigh vacuum system. Wafers were in situ cleaned in the growth chamber by thermal desorption at 840 °C for 30 min. The wafer surface was examined by reflection high energy electron diffraction (RHEED). The epitaxial growth rate was at or higher than 0.020 nm/s. Epitaxial films were characterized by cross‐sectional transmission electron microscopy (XTEM) and secondary ion mass spectroscopy (SIMS).
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81.15.Kk Vapor phase epitaxy; growth from vapor phase

Bilayer reflection‐high‐energy‐electron‐diffraction intensity oscillations observed during growth on double‐domain Si(001) surfaces

N. Ohtani, S. M. Mokler, J. Zhang, and B. A. Joyce

Appl. Phys. Lett. 61, 1399 (1992); http://dx.doi.org/10.1063/1.107550 (3 pages) | Cited 6 times

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Bilayer reflection‐high‐energy‐electron diffraction (RHEED) intensity oscillations were observed during growth on a double‐domain Si(001) substrate during silicon gas‐source molecular beam epitaxy (Si‐GSMBE) using disilane. A transition from monolayer‐ to bilayer‐mode oscillation behavior was observed in the [110] azimuth during growth. Oscillations began with an asymmetric monolayer waveform which transformed into an apparent bilayer mode following several oscillation periods. Simultaneous measurement of RHEED intensity oscillations of the specular beam and (1×2) and (2×1) reconstruction related beams in the [010] azimuth showed that the bilayer oscillations resulted from alternating surface reconstructions. The origin of these bilayer oscillations is discussed on the basis of the anisotropic growth kinetics on Si(001) surfaces.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
68.35.B- Structure of clean surfaces (and surface reconstruction)

In situ Hall measurement of two‐dimensional electron gas at Al0.3Ga0.7As/GaAs interface irradiated with 10‐keV Ar ions

Toshihiko Kanayama, Yukihiro Takeuchi, Yoshinobu Sugiyama, and Munecazu Tacano

Appl. Phys. Lett. 61, 1402 (1992); http://dx.doi.org/10.1063/1.107551 (3 pages) | Cited 2 times

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In situ Hall measurements reveal that the mobility of two‐dimensional electron gas 80‐nm‐deep from the surface decreases simultaneously with 10‐keV Ar‐ion irradiation at 90 K. This demonstrates that penetration of irradiation defects far beyond the ion range (projected range =8.8 nm) is due to the channeling effect. Annealing of the irradiated sample was also performed. Partial recovery in the mobility observed indicates that the defects become thermally mobile at above 200 K.
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61.72.Bb Theories and models of crystal defects
61.72.U- Doping and impurity implantation
61.80.Jh Ion radiation effects
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Resonant tunneling of electrons in Si/Ge strained‐layer double‐barrier tunneling structures

J. C. Chiang and Yia‐Chung Chang

Appl. Phys. Lett. 61, 1405 (1992); http://dx.doi.org/10.1063/1.107552 (3 pages) | Cited 1 time

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Resonant‐tunneling characteristics of electrons in Si/Ge strained‐layer double‐barrier structures are investigated within an antibonding‐orbital model. The model is capable of describing the low‐lying conduction bands accurately throughout the entire Brillouin zone. J‐V curves for some selected Si/Ge strained‐layer double‐barrier structures for three different crystallographic orientations are studied. Negative differential resistances are found for these structures grown along [001] and [111] directions, but not along the [110] direction.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling
79.60.Dp Adsorbed layers and thin films
79.70.+q Field emission, ionization, evaporation, and desorption
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Measurements of film carrier lifetimes in silicon‐on‐insulator wafers by a contactless dual‐beam optical modulation technique

Ping‐Chang Yang and Sheng S. Li

Appl. Phys. Lett. 61, 1408 (1992); http://dx.doi.org/10.1063/1.107553 (3 pages) | Cited 3 times

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A contactless dual‐beam optical modulation (DBOM) technique has been applied to measure the film carrier lifetimes in the SIMOX (separation by implantation of oxygen) wafers with different oxygen implant doses, annealing temperatures, and film thicknesses. Film carrier lifetimes ranging from 0.23 to 0.72 μs were observed in these wafers. The DBOM method is based on the modulation of the transmission intensity of an infrared (IR) probe beam by a visible pump beam (hν≥Eg) via free‐carrier absorption in the SIMOX wafer. A theoretical model is developed to deduce the excess carrier lifetimes in the SIMOX film by the DBOM technique. Mappings of the film carrier lifetimes in these SIMOX wafers were also carried out.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
61.72.uf Ge and Si

Size dependence of the thermal broadening of the exciton linewidth in GaAs/Ga0.7Al0.3As single quantum wells

H. Qiang, Fred H. Pollak, C. M. Sotomayor Torres, W. Leitch, A. H. Kean, Michael A. Stroscio, Gerald J. Iafrate, and K. W. Kim

Appl. Phys. Lett. 61, 1411 (1992); http://dx.doi.org/10.1063/1.107554 (3 pages) | Cited 40 times

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We have studied the temperature dependence of the linewidth, Γ(T), of the fundamental absorption edge in bulk GaAs and four GaAs/Ga0.7Al0.3As single quantum wells of different well width using photoreflectance. As a result of the size dependence of the exciton‐longitudinal optical phonon interaction, the thermal broadening of the linewidth diminishes as the dimensionality and size of the system are reduced.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
71.35.-y Excitons and related phenomena

Effect of thermal annealing and surface coverage on porous silicon photoluminescence

M. B. Robinson, A. C. Dillon, D. R. Haynes, and S. M. George

Appl. Phys. Lett. 61, 1414 (1992); http://dx.doi.org/10.1063/1.107555 (3 pages) | Cited 56 times

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The effect of thermal annealing and surface coverage on porous silicon photoluminescence was studied in situ in an ultrahigh vacuum chamber. These investigations correlated simultaneously temperature, surface coverage, and photoluminescence intensity. The surface coverage was monitored using transmission Fourier transform infrared spectroscopy. The results demonstrated that the photoluminescence could not be defined only according to the presence of SiH2 surface species. Likewise, the disappearance of the photoluminescence versus thermal annealing did not scale directly with H2 desorption from SiH2 species. The loss of photoluminescence versus thermal annealing was attributed to surface structural changes or the production of surface states which provide pathways for nonradiative recombination.
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78.55.Hx Other solid inorganic materials
73.20.Hb Impurity and defect levels; energy states of adsorbed species
81.65.-b Surface treatments

Anomalies in the pressure response of the Raman modes in (211)‐oriented InxGa1−xAs/GaAs strained‐layer superlattices

V. Lemos, T. Ritter, and B. A. Weinstein

Appl. Phys. Lett. 61, 1417 (1992); http://dx.doi.org/10.1063/1.107556 (3 pages) | Cited 5 times

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The phonon spectra of InxGa1−xAs/GaAs strained‐layer superlattices grown on (100), or either one of the two inequivalent (211)A and B surfaces of GaAs were obtained by Raman scattering for pressures ranging from 1 atm to 13.0 GPa. The measurements show that phonon frequencies are discontinuous functions of pressure for (211)A superlattices in contrast to the continuous behavior observed for (100) and (211)B‐oriented superlattices. These discontinuities are discussed in terms of pressure induced increase in the density of heterointerface dislocations.
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63.20.-e Phonons in crystal lattices
62.50.-p High-pressure effects in solids and liquids
78.30.Fs III-V and II-VI semiconductors

Hot filament assisted deposition of silicon nitride thin films

Sadanand V. Deshpande, Jeffrey L. Dupuie, and Erdogan Gulari

Appl. Phys. Lett. 61, 1420 (1992); http://dx.doi.org/10.1063/1.107557 (3 pages) | Cited 16 times

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Hot filament assisted chemical vapor deposition (HFCVD) of silicon nitride thin films was studied with disilane (Si2H6) and ammonia (NH3) as the source gases. High optical density films were obtained at a low substrate temperature (375 °C) and high deposition rates (up to 1700 Å/min). The effects of disilane flow rate, filament temperature, and disilane carrier gas composition on film properties were investigated. Transmission infrared measurements showed low hydrogen content (<5%) in the films. Sputter depth profiling using x‐ray photoelectron spectroscopy indicated high film purity with only surface oxygen contamination from air exposure after deposition.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
77.55.-g Dielectric thin films

Growth rate suppression of InGaAs film grown by laser‐assisted chemical beam epitaxy

Ryuzo Iga, Hideo Sugiura, and Takeshi Yamada

Appl. Phys. Lett. 61, 1423 (1992); http://dx.doi.org/10.1063/1.107558 (3 pages) | Cited 3 times

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The mechanism for the grow rate suppression of InGaAs by Ar ion laser‐assisted chemical beam epitaxy is studied. A comparison of the cross‐sectional profile in the laser‐irradiated area with the distribution of the substrate temperature formed by laser irradiation reveals that laser‐induced heating is due to the growth rate suppression. The dependence of the InGaAs growth rate on the AsH3 flow rate suggests that the decrease in the As flux suppresses the InGaAs growth rate without laser irradiation. These results indicate that the evaporation of As atoms from the growing surface due to laser‐induced heating is the cause of the growth rate suppression of InGaAs.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Point defect injection into silicon due to low‐temperature surface modifications

Carsten Christensen, Jon Wulff Petersen, and Arne Nylandsted Larsen

Appl. Phys. Lett. 61, 1426 (1992); http://dx.doi.org/10.1063/1.107559 (3 pages) | Cited 12 times

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Deep level transient spectroscopy has been applied to study the appearance of phosphorus‐vacancy pairs in n‐type silicon following different low‐temperature surface modifications. It is established that at most 107 cm−2 vacancy is injected into the bulk of the silicon substrate during Pd2Si silicide formation. On the other hand, phosphorus‐vacancies pairs are observed after electron irradiation, low energy ion bombardment, and electron gun evaporation of metal films.
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61.72.jd Vacancies
61.72.jj Interstitials
61.72.uf Ge and Si
61.80.-x Physical radiation effects, radiation damage
66.30.J- Diffusion of impurities

Single‐crystal thin film InP: Fabrication and absorption measurements

G. Augustine, N. M. Jokerst, and A. Rohatgi

Appl. Phys. Lett. 61, 1429 (1992); http://dx.doi.org/10.1063/1.107560 (3 pages) | Cited 7 times

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A new process for separating high quality single‐crystal InP thin films from the growth substrate is reported. These thin films were used for transmission measurements to determine InP absorption coefficients above the band edge. Photoluminescence measurements performed on these films before and after the fabrication process verified that the high quality of the separated thin film was not affected by the fabrication process. Two n‐type InP thin films, one with a doping concentration of 1.4×1017 cm−3 (1 μm thick) and the other with a doping concentration of 3.2×1018 cm−3 (2.5 μm thick), were grown and subsequently separated from the substrate. Using these separated films, the first direct transmission measurements of above band edge absorption coefficients in doped InP films are reported in this letter.  
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors
68.55.-a Thin film structure and morphology

Sharp‐line photoluminescence of GaAs grown by low‐temperature molecular beam epitaxy

P. W. Yu, D. C. Reynolds, and C. E. Stutz

Appl. Phys. Lett. 61, 1432 (1992); http://dx.doi.org/10.1063/1.107561 (3 pages) | Cited 17 times

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We report sharp‐line photoluminescence spectra from GaAs layers grown by low‐temperature molecular beam epitaxy. The photoluminescence consists of no‐phonon line (A) at 1.467 eV and associated phonon sidebands of both lattice and localized vibrational modes. Photoluminescence features, layer growth condition, and heat treatment of the layer for the complex responsible for the photoluminescence spectrum are found to be consistent with the C3v symmetry of the complex. The spectra reveal five local phonons having stronger intensity compared to the lattice phonon. We propose that the complex is due to the nearest‐neighbor VGa‐Asi pair.
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78.55.Cr III-V semiconductors
71.55.Eq III-V semiconductors
71.35.-y Excitons and related phenomena
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

High pressure optical investigation of porous silicon

Weimin Zhou, H. Shen, J. F. Harvey, R. A. Lux, M. Dutta, F. Lu, C. H. Perry, R. Tsu, N. M. Kalkhoran, and F. Namavar

Appl. Phys. Lett. 61, 1435 (1992); http://dx.doi.org/10.1063/1.108466 (3 pages) | Cited 22 times

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We have performed the first photoluminescence (PL) measurements under hydrostatic pressure up to 37 kbar at room temperature on several porous silicon (Si) samples fabricated under different etching conditions. A blue shift of the PL peak energy was observed in all samples from 0 to ∼20 kbar. Above ∼20 kbar, the PL peak energy appears to be constant or even to exhibit a small red shift with pressure in some samples. This pressure dependence of the PL peak energy of porous Si is different from the pressure induced red shift in the PL from the indirect band gap of the bulk Si crystal, or the red shift in the PL from amorphous Si. The intensity of the PL peaks showed a decrease with increasing pressure. We have also observed a red shift with time when a blue laser continuously illuminated the sample. These results on the pressure dependence of porous Si provide critical information for modeling and determining the electronic structure of porous silicon.
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78.55.Hx Other solid inorganic materials
62.50.-p High-pressure effects in solids and liquids
81.65.-b Surface treatments

Photoquenching of hopping conduction in low‐temperature‐grown molecular‐beam‐epitaxial GaAs

Z.‐Q. Fang and D. C. Look

Appl. Phys. Lett. 61, 1438 (1992); http://dx.doi.org/10.1063/1.107562 (3 pages) | Cited 20 times

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We have observed IR photoquenching of the hopping conduction in GaAs samples grown by molecular beam epitaxy at the low temperature of 250 °C and annealed at temperatures from 300 to 600 °C. A key element in the success of this study is removal of the layers from their substrates. The hopping conduction recovers at about 140 K, with a thermal activation energy of about 0.3 eV.
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72.80.Ey III-V and II-VI semiconductors
71.55.Eq III-V semiconductors
72.40.+w Photoconduction and photovoltaic effects

Application of an emitter edge‐thinning technique to GaAs/AlGaAs double heterostructure‐emitter bipolar transistor

Wen‐Chau Liu, Der‐Feng Guo, and Wen‐Shiung Lour

Appl. Phys. Lett. 61, 1441 (1992); http://dx.doi.org/10.1063/1.107563 (3 pages) | Cited 8 times

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A GaAs/AlGaAs double heterostructure‐emitter bipolar transistor (DHEBT), prepared by molecular beam epitaxy, has been fabricated with improved performance. The employment of emitter edge‐thinning technique has caused a significant suppression of the surface leakage current. A common‐emitter current gain of up to 140 with a negligible collector offset voltage (∼40 mV) was obtained. The undesired knee‐shaped characteristics and the reachthrough effect, always observed on the conventional double heterojunction bipolar transistor (DHBT), were eliminated. An interestingly bi‐directional and three‐terminal controlled switching phenomena may also be exhibited by this device. This gives a substantial flexibility in the device and circuit applications. The electrical performance is believed to be further improved with an adequate design to minimize the area difference between emitter‐base (EB) and the base‐collector (BC) junction.
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85.30.Pq Bipolar transistors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
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