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28 Sep 1992

Volume 61, Issue 13, pp. 1481-1604

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Imaging performance of multilayer x‐ray mirrors

Eberhard Spiller, Janusz Wilczynski, Daniel Stearns, Leon Golub, and George Nystrom

Appl. Phys. Lett. 61, 1481 (1992); http://dx.doi.org/10.1063/1.107522 (3 pages) | Cited 15 times

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See Also: Erratum

Show Abstract
We analyze soft x‐ray images of the solar corona, obtained on the day of the solar eclipse in July 1991, and find that the deviations of our telescope mirror from the perfect surface are less than 1 Å for spatial periods between 1 μm and 1 mm. Our thin film deposition technique allows us to reduce errors over larger periods to the 1 Å level. Thus, we are able to produce large (diameter over 20 cm) x‐ray mirrors with diffraction limited resolution below 0.01 arcsec.
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95.85.Nv X-ray
95.55.-n Astronomical and space-research instrumentation
42.79.Bh Lenses, prisms and mirrors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

On‐axis far‐field emission from two‐dimensional phase‐locked vertical cavity surface‐emitting laser arrays with an integrated phase‐corrector

M. E. Warren, P. L. Gourley, G. R. Hadley, G. A. Vawter, T. M. Brennan, B. E. Hammons, and K. L. Lear

Appl. Phys. Lett. 61, 1484 (1992); http://dx.doi.org/10.1063/1.107523 (3 pages) | Cited 32 times

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We have fabricated large, two‐dimensional (2D) arrays of optically pumped, phase‐locked vertical cavity surface‐emitting lasers that emit more than 50% of their light in a central on‐axis lobe. The emission of the arrays was modified from the usual four‐lobed far‐field of 2D coupled arrays by incorporation of a binary phase‐shift mask on the surface of the array. The array consists of Fabry–Perot resonators comprising GaAs/AlGaAs quantum wells surrounded by AlAs/AlGaAs quarterwave mirrors with a multiple order AlGaAs phase‐delay layer on the top mirror stack. The phase‐shift layer was etched away on alternating elements of the array. The resulting on‐axis emission had an angular width of 2° for an array of approximately 100 elements.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

High quantum efficiency monolithic arrays of surface‐emitting AlGaAs diode lasers with dry‐etched vertical facets and parabolic deflecting mirrors

J. P. Donnelly, W. D. Goodhue, R. J. Bailey, G. A. Lincoln, C. A. Wang, and G. D. Johnson

Appl. Phys. Lett. 61, 1487 (1992); http://dx.doi.org/10.1063/1.107524 (3 pages) | Cited 4 times

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Monolithic arrays of surface‐emitting AlGaAs diode lasers with dry‐etched vertical facets and external parabolic deflecting mirrors have been operated with both short and quasi‐cw current pulses. The arrays emit at 804 nm with threshold current densities as low as 220 A/cm2 and differential quantum efficiencies as high as 66%. The vertical facets and parabolic deflecting mirrors were formed by using chlorine ion‐beam‐assisted etching with standard photolithography.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Broadly tunable picosecond pulses generated in a β‐BaB2O4 optical parametric amplifier pumped by 0.532 μm pulses

X. D. Zhu and L. Deng

Appl. Phys. Lett. 61, 1490 (1992); http://dx.doi.org/10.1063/1.107525 (3 pages) | Cited 1 time

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We report the generation of a highly intense, tunable source from 0.67 μm to 2.58 μm by optical parametric generation and amplification in β‐barium borate (BBO) pumped by picosecond pulses at 0.532 μm. The maximum conversion efficiency from the pump to the signal is 13%. The output energy is in the range a few hundred μJ.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Pump‐probe interferometric measurement of nonlinear phase modulation in a GaAs/AlGaAs multiple‐quantum‐well waveguide

F. R. Laughton, J. H. Marsh, and C. Button

Appl. Phys. Lett. 61, 1493 (1992); http://dx.doi.org/10.1063/1.107526 (3 pages) | Cited 1 time

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Nonlinear refractive index measurements have been made at 1.06 μm using a time‐division interferometer, and n2 measured to be about −3×10−17 m2 W−1 for a TM pump and TE probe. The refractive index change was also seen to contain a positive component at small pump‐probe delay times, corresponding to an intensity‐dependent nonlinear refractive index of n2≊2×10−17 m2 W−1.
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42.79.Gn Optical waveguides and couplers
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.47.-p Spectroscopy of solid state dynamics

Robust electrically tunable 1.5 μm mode‐locked fiber‐external‐cavity laser

Patrick P. Iannone, Gregory Raybon, Uziel Koren, and Paul R. Prucnal

Appl. Phys. Lett. 61, 1496 (1992); http://dx.doi.org/10.1063/1.107527 (3 pages) | Cited 3 times

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We demonstrate a robust, broadly tunable pulse source operating near 1.55 μm wavelength consisting of a silica fiber external cavity coupled to an antireflection‐coated InGaAsP two‐section distributed‐Bragg‐reflector laser. The laser is actively mode locked at a repetition rate of 1.92 GHz to produce nearly transform‐limited pulses with full width at half‐maximum as low as 24 ps and can be electrically tuned over a wavelength range exceeding 8 nm.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

InGaAsP/InP horizontal cavity surface‐emitting lasers radiating in two opposite directions

S. Wakabayashi, K. Mutoh, M. Nakajima, and Y. Toyoda

Appl. Phys. Lett. 61, 1499 (1992); http://dx.doi.org/10.1063/1.107528 (3 pages) | Cited 1 time

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A 1.3 μm InGaAsP/InP surface‐emitting laser of a new design is demonstrated. It consists of internal and external 45° micromirrors and emits beams from both the front and rear surfaces. The device has a buried crescent laser structure with reflection mirrors etched at vertical and 45° to the plane of the active layer. The mirror facets are fabricated using one reactive ion‐beam etching process. A threshold current of 80 mA, and each output power above 0.2 mW are achieved at room temperature.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

High power and high efficiency vertical cavity surface emitting GaAs laser

D. C. Sun, S. R. Friberg, K. Watanabe, S. Machida, Y. Horikoshi, and Y. Yamamoto

Appl. Phys. Lett. 61, 1502 (1992); http://dx.doi.org/10.1063/1.107529 (2 pages) | Cited 3 times

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We report high power and high efficiency operation of a vertical cavity surface emitting GaAs laser in an external cavity. The maximum cw output power from the fundamental TEM00 mode was 700 mW at a temperature of 77 K when pumped by a cw krypton‐ion laser with 1.8 W pump power. We obtained an absolute quantum efficiency (pump photons to lasing photons) of 44%, and a differential efficiency above threshold of 58%.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Electro‐optic sampling and carrier dynamics at zero propagation distance

U. D. Keil and D. R. Dykaar

Appl. Phys. Lett. 61, 1504 (1992); http://dx.doi.org/10.1063/1.107530 (3 pages) | Cited 29 times

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We demonstrate 200 fs (full width at half maximum) electrical pulse generation and detection using low‐temperature grown GaAs and total internal reflection electro‐optic sampling. System limited electrical rise times (10%–90%) of 150 fs are measured. Carrier dynamics are investigated for short times in GaAs and InP using this technique and compared with transient reflectivity measurements.
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78.47.-p Spectroscopy of solid state dynamics
73.50.Pz Photoconduction and photovoltaic effects

Study on channel deformation in the GaAlAs/GaAs V‐channeled substrate inner stripe lasers: Contamination and growth profile

Song Jae Lee, Jae‐Kyung Song, Joo‐Sung Park, Nam‐Heon Kim, Woon‐Young Song, Seok‐Ki Koh, Joon‐Young Kim, Dong‐Soo Shin, Jae‐Ho Lee, Dong‐Soo Bang, See‐Hyung Lee, Ki‐Hwan Kim, and Young W. Huh

Appl. Phys. Lett. 61, 1507 (1992); http://dx.doi.org/10.1063/1.107531 (3 pages)

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A study on channel deformation in the GaAlAs/GaAs V‐channeled substrate inner stripe (VSIS) laser is presented. The deformation of the chemically etched V‐channel is achieved by two independent mechanisms, i.e., the mass transport and melt etch increasing the effective channel width, one of the most important parameters to control device characteristics. However, contrary to widely accepted conception, the melt etch plays a relatively minor role in channel deformation, compared to the mass transport. We have also found that both the mass transport and melt etch depend strongly on hardening of sample surface, which in turn depends on the system condition.
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68.55.-a Thin film structure and morphology
42.55.Px Semiconductor lasers; laser diodes

Observation of growing kinetics of particles in a helium‐diluted silane rf plasma

Y. Watanabe, M. Shiratani, and M. Yamashita

Appl. Phys. Lett. 61, 1510 (1992); http://dx.doi.org/10.1063/1.107532 (3 pages) | Cited 40 times

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Growing process and behavior of particles in a helium‐diluted silane rf plasma are studied using two kinds of laser light scattering methods. The region where particles began to be observed appears in a sheath edge region near the periphery of the rf electrode, and then tends to extend inward along the rf electrode and also toward the grounded electrode. From this result, it can be concluded that particles are mainly produced around the sheath edge of the rf electrode. In the sheath of the rf electrode and its neighborhood, larger particles tend to reside closer to the rf electrode, which suggests that they are suspended by an electrostatic force due to the time‐averaged sheath electric field and some force increasing with particle size. The size and density of particles around the sheath edge of the rf electrode are ≳60 nm and ≲109 cm−3 under our experimental conditions.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.80.Pi High-frequency and RF discharges

Characterization of epitaxial layers by the depth dependence of boron diffusivity

K. J. van Oostrum, P. C. Zalm, W. B. de Boer, D. J. Gravesteijn, and J. W. F. Maes

Appl. Phys. Lett. 61, 1513 (1992); http://dx.doi.org/10.1063/1.107533 (3 pages) | Cited 18 times

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Differences in boron diffusivity have been used to characterize epitaxially grown silicon layers. After oxidation‐enhanced diffusion of boron spikes, a decrease in boron diffusivity with increasing depth is observed in epitaxial silicon layers grown by molecular beam epitaxy and fast gas switching vapor deposition, in contrast to layers grown by low‐temperature chemical vapor deposition. The reduced boron diffusivity is thought to be caused by an oversaturation of vacancy defects, acting as interstitial traps, suppressing the diffusion of boron.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.Fx Diffusion; interface formation
61.72.jd Vacancies
61.72.jj Interstitials

Structural and electro‐optic properties of laser ablated Bi4Ti3O12 thin films on SrTiO3(100) and SrTiO3(110)

W. Jo, G‐C. Yi, T. W. Noh, D‐K. Ko, Y. S. Cho, and S‐I. Kwun

Appl. Phys. Lett. 61, 1516 (1992); http://dx.doi.org/10.1063/1.107534 (3 pages) | Cited 32 times

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Bi4Ti3O12 thin films have been grown by laser ablation on SrTiO3(100) and SrTiO3(110) substrates. Substrate surface orientation is found to be an important growth parameter which determines crystal axis orientation, grain growth behavior, and electro‐optic properties of the Bi4Ti3O12 thin films. The films grown on SrTiO3(110) shows a ferroelectric phase transition near 720 °C and a large quadratic electro‐optic effect with the effective coefficient 1.1×10−16 m2/V 2.
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77.55.-g Dielectric thin films
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
77.80.-e Ferroelectricity and antiferroelectricity
78.66.-w Optical properties of specific thin films

Nanoscale CoSi2 contact layer growth from deposited Co/Ti multilayers on Si substrates

Feng Hong, George A. Rozgonyi, and Bijoy Patnaik

Appl. Phys. Lett. 61, 1519 (1992); http://dx.doi.org/10.1063/1.108465 (3 pages) | Cited 26 times

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In this letter, we describe procedures for forming continuous, planar, and thermally stable 12‐nm‐thick CoSi2 layers via Co/Si interaction through an interfacial Ti(O) diffusion barrier layer. Three Co and three Ti layers were deposited sequentially on Si‐(100) substrates by dual source thermal evaporation with Ti as the first layer. Oxygen was found to be selectively incorporated into all Ti layers during deposition. Following a 550 °C, 2 h anneal the morphology of the silicide layer depended strongly on the thickness of the initial Ti(O) layer. For an initial Ti(O) layer of ∼5 nm, both Co and Si readily diffused to form a Co silicide interfacial layer with a very rough, faceted interface. Increasing the Ti(O) thickness to ∼10 nm stopped Si out diffusion and reduced Co in diffusion such that a uniform 6 nm CoSix interfacial layer formed. Selective removal of the upper layers and a 750/800 °C annealing produced a 12 nm CoSi2 layer with a resistivity of ∼28 μΩ cm.
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81.15.Np Solid phase epitaxy; growth from solid phases
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Tungsten metallization onto InP prepared by rapid thermal low‐pressure chemical vapor deposition of WF6 and H2

A. Katz, A. Feingold, A. El‐Roy, S. J. Pearton, E. Lane, S. Nakahara, and M. Geva

Appl. Phys. Lett. 61, 1522 (1992); http://dx.doi.org/10.1063/1.107535 (3 pages) | Cited 5 times

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Tungsten (W) films were deposited onto InP in a cold wall, rapid thermal low‐pressure chemical vapor deposition (RT‐LPCVD) reactor, using a tungsten hexafluoride (WF6) gas reduced by hydrogen (H2). W films of thickness 50–450 nm were deposited in the temperature range of 350–550 °C, pressure range of 0.5–4.5 Torr, and deposition rates up to 4 nm/s with an apparent activation energy of about 1.12 eV. The film stress varied depending on the deposition pressure, from low compressive (deposition at 0.5 Torr) to moderate tensile (deposition at about 4.5 Torr). Post‐deposition sintering of the W films at temperatures up to 600 °C led to reduction of the resistivity with a minimum value of about 55 μΩ cm as a result of heating at 500 °C.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.At Metal and metallic alloys
68.60.-p Physical properties of thin films, nonelectronic

Strontium titanate thin films by rapid thermal processing

P. C. Joshi and S. B. Krupanidhi

Appl. Phys. Lett. 61, 1525 (1992); http://dx.doi.org/10.1063/1.107536 (3 pages) | Cited 28 times

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SrTiO3 thin films having perovskite structure were fabricated by sol‐gel technique with a post‐deposition rapid thermal annealing treatment at 550 °C for 60 s. The films exhibited good structural, dielectric, and insulating properties. The measured dielectric constant and loss factor at 100 kHz were 225 and 0.008, respectively. Unit area capacitance of 3.5 fF/μm2 and leakage current density of less than 10−8 A/cm2 were obtained for 500–800 nm thick films. A charge storage density of 18.3 fC/μm2 was obtained at an applied electric field of 100 kV/cm. The resistivity of these films was in the range of 1010–1013 Ω cm. The C‐V measurements on films in metal‐insulator‐semiconductor (MIS) configuration indicated good Si/SrTiO3 interface characteristics.
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77.55.-g Dielectric thin films
81.15.Rs Spray coating techniques
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Field‐induced surface modification on the atomic scale by scanning tunneling microscopy

Jin‐Lin Huang, Yung‐Eun Sung, and Charles M. Lieber

Appl. Phys. Lett. 61, 1528 (1992); http://dx.doi.org/10.1063/1.107537 (3 pages) | Cited 13 times

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Scanning tunneling microscopy has been used to study the modification of tin diselenide (SnSe2) and molybdenum disulfide (MoS2) surfaces in ultrahigh vacuum. We have shown that there are positive bias voltage pulse thresholds that must be exceeded to remove material from the surfaces of SnSe2 and MoS2. The voltage threshold for modification of SnSe2(+1.4 V) is significantly smaller in magnitude than the threshold for modification of MoS2(+3.5 V). These threshold results and tip‐sample distance dependence data suggest that modification occurs by field evaporation. Additionally, near threshold pulses create stable atomic sizes defects that can be erased by high voltage scanning.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
81.65.-b Surface treatments

Molecular beam epitaxial growth of Si on Ga‐activated Si(111) surface

Hitoshi Nakahara and Masakazu Ichikawa

Appl. Phys. Lett. 61, 1531 (1992); http://dx.doi.org/10.1063/1.107538 (3 pages) | Cited 37 times

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Molecular beam epitaxial (MBE) growth of silicon on gallium‐activated Si(111) surface is investigated by microprobe reflection high‐energy electron diffraction. Improvement in crystallinity is observed for a film grown on Ga adsorbed surface compared with that grown on a clean Si surface. Substrate temperature dependence of denuded zone width of two‐dimensional (2D) nuclei is measured for various growth rates. The measurements give the activation energy of surface diffusion and the critical 2D nucleus size. Due to gallium adsorption on the surface, the activation energy becomes lower and the size becomes larger than those on the clean Si surface. This improves the crystallinity of the grown film. MBE growth of Si on partially activated surface is also reported. It is found that a film with good crystallinity grows selectively on Ga‐adsorbed area.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
66.30.Ny Chemical interdiffusion; diffusion barriers

Growth kinetics and properties of heteroepitaxial ZnTe films grown by metalorganic molecular beam epitaxy

D. Rajavel and J. J. Zinck

Appl. Phys. Lett. 61, 1534 (1992); http://dx.doi.org/10.1063/1.107539 (3 pages) | Cited 4 times

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High quality (001) ZnTe films have been grown on (001) GaAs by metalorganic molecular beam epitaxy using thermally precracked diethylzinc and diethyltellurium. Reflection high‐energy electron diffraction intensity oscillations were measured during the growth of ZnTe and were used to determine the growth kinetics as a function of substrate temperature and II/VI flux ratio. X‐ray rocking curves with full widths at half maximum of approximately 200 arcsec have been measured for ZnTe films grown at 385 °C under Zn‐rich conditions. Secondary ion mass spectrometric analysis indicated that carbon contamination in the films was minimal. The photoluminescence spectra of the ZnTe layers measured at 5 K were dominated by features associated with free and bound excitons and exhibited weak deep level emission.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Fatigue and retention in ferroelectric Y‐Ba‐Cu‐O/Pb‐Zr‐Ti‐O/Y‐Ba‐Cu‐O heterostructures

R. Ramesh, W. K. Chan, B. Wilkens, H. Gilchrist, T. Sands, J. M. Tarascon, V. G. Keramidas, D. K. Fork, J. Lee, and A. Safari

Appl. Phys. Lett. 61, 1537 (1992); http://dx.doi.org/10.1063/1.107488 (3 pages) | Cited 227 times

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Fatigue and retention characteristics of ferroelectric lead zirconate titanate thin films grown with Y‐Ba‐Cu‐O(YBCO) thin‐film top and bottom electrodes are found to be far superior to those obtained with conventional Pt top electrodes. The heterostructures reported here have been grown in situ by pulsed laser deposition on yttria‐stabilized ZrO2 buffer [100] Si and on [001] LaAlO3. Both the a‐ and c‐axis orientations of the YBCO lattice have been used as electrodes. They were prepared using suitable changes in growth conditions.
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77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
84.32.Tt Capacitors

Picosecond transient photoluminescence spectra of ZnSe‐ZnS strained‐layer superlattices grown on GaAs(001) by molecular beam epitaxy

Jie Cui, Hai‐Long Wang, Fu‐Xi Gan, Xu‐Guang Huang, Zhi‐Gang Cai, Qing‐Xing Li, and Zhen‐Xin Yu

Appl. Phys. Lett. 61, 1540 (1992); http://dx.doi.org/10.1063/1.107489 (3 pages) | Cited 9 times

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Picosecond transient photoluminescence spectra were carried out on ZnSe‐ZnS strained‐layer superlattices at 77 K. The typical exciton formation time and exciton lifetime are 40 and 100 ps, respectively. The relationship between exciton lifetime and the well width is also given.
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78.55.Et II-VI semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Preparation of multilayered thin silicon‐on‐insulator structure by low‐energy oxygen ion implantation

Yukari Ishikawa and Noriyoshi Shibata

Appl. Phys. Lett. 61, 1543 (1992); http://dx.doi.org/10.1063/1.107490 (3 pages) | Cited 6 times

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Multilayered thin silicon‐on‐insulator (SOI) structures have been produced by multiple 25 keV oxygen implantation and in situ silicon growth by molecular beam epitaxy. The structures were analyzed by Auger electron spectroscopy and cross‐sectional transmission electron microscopy. A double SOI structure after high temperature annealing has the top silicon layer, upper buried oxide layer, buried silicon layer, and lower oxide layer with thicknesses of 32, 40, 85, and 32 nm, respectively. The multilayered structure has abrupt interfaces between silicon and oxide layers and crystal quality comparable to that produced by the conventional separation by the implanted oxygen (SIMOX) process.
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61.72.uf Ge and Si
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Chlorine: A new efficient n‐type dopant in CdTe layers grown by molecular beam epitaxy

D. Hommel, A. Waag, S. Scholl, and G. Landwehr

Appl. Phys. Lett. 61, 1546 (1992); http://dx.doi.org/10.1063/1.107491 (3 pages) | Cited 9 times

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We report for the first time on successful n‐type doping of CdTe epilayers by the use of chlorine. The free‐carrier concentration in the layers, grown by molecular beam epitaxy (MBE) and photoassisted MBE, can be varied easily over three orders of magnitude by changing the ZnCl2 oven temperature. Peak mobilities between 4700 cm2/V s (n=1.8×1016 cm−3) and 480 cm2/V s (n=1.6×1018 cm−3) are obtained. The resistivity of highly Cl‐doped layers is as low as 8.5×10−3 Ω cm. Compared with In, which is commonly used for obtaining n‐type CdTe epilayers, higher free‐carrier concentrations and higher peak mobilities are obtained for compatible growth procedures by the use of Cl.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Ga II-VI semiconductors

Anomalous splitting in the photoreflectance response of semi‐insulating GaAs and correlation with EL2

C. Durbin, J. P. Estrera, R. Glosser, Walter Duncan, R. L. Henry, P. Nordquist, N. Bottka, and D. K. Gaskill

Appl. Phys. Lett. 61, 1549 (1992); http://dx.doi.org/10.1063/1.107492 (3 pages) | Cited 5 times

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Anomalous splitting has been observed in the photoreflectance (PR) response of SI:GaAs in the vicinity of the exciton at 78 K. Photoluminescence (PL) measurements suggest the splitting is correlated with the EL2 content of the samples. Separation between the two peaks in PR measurements range from about 2 to 4 meV. A striking effect is that each peak is maximized by a different phase setting of the lock‐in. The splitting is sample dependent and is also affected by several other factors including surface conditions, temperature, pump beam intensity, and modulation frequency.
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71.55.Eq III-V semiconductors
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.55.Cr III-V semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Visible light emission at room temperature from anodized plasma‐deposited silicon thin films

E. Bustarret, M. Ligeon, J. C. Bruyère, F. Muller, R. Hérino, F. Gaspard, L. Ortega, and M. Stutzmann

Appl. Phys. Lett. 61, 1552 (1992); http://dx.doi.org/10.1063/1.107493 (3 pages) | Cited 20 times

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In situ boron‐doped hydrogenated silicon films plasma‐deposited on various conductive substrates (including transparent oxides on glass) have been anodized in hydrofluoric acid solutions and subsequently electrochemically oxidized in an aqueous electrolyte. At room temperature, the resulting layers yield visible photoluminescence and electroluminescence intensities and spectral shapes similar to those of p‐type crystalline porous silicon obtained in the same way. The results demonstrate the technological feasibility of light‐emitting devices by applying electrochemical processes to deposited silicon‐based films.
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78.55.Hx Other solid inorganic materials
78.60.Fi Electroluminescence
81.65.-b Surface treatments
78.35.+c Brillouin and Rayleigh scattering; other light scattering
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