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5 Oct 1992

Volume 61, Issue 14, pp. 1613-1734

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1×16 photonic switch operating at 1.55 μm wavelength based on optical amplifiers and a passive optical splitter

U. Koren, M. G. Young, B. I. Miller, M. A. Newkirk, M. Chien, M. Zirngibl, C. Dragone, B. Glance, T. L. Koch, B. Tell, K. Brown‐Goebeler, and G. Raybon

Appl. Phys. Lett. 61, 1613 (1992); http://dx.doi.org/10.1063/1.108464 (3 pages) | Cited 2 times

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An InP based 1×16 optical switch is demonstrated. The sixteen output ports are spaced 250 μm apart, and the total device length is 5.9 mm. Optical amplifiers are used to gate the optical signals and to provide optical gain. The total loss of the device, excluding coupling, is less than 2.5 dB and loss free operation was observed at low input powers. The output extinction ratios are lower than 18 dB and the uniformity spread of the sixteen channels is as low as 6.7 dB.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Fm Reflectors, beam splitters, and deflectors

Optical second harmonic generation in Langmuir–Blodgett films of n‐docosyl‐2‐methyl‐4‐nitroaniline

V. A. Howarth, N. Asai, N. Kishii, and I. Fujiwara

Appl. Phys. Lett. 61, 1616 (1992); http://dx.doi.org/10.1063/1.107511 (3 pages) | Cited 4 times

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The preparation of Langmuir–Blodgett (LB) films of n‐docosyl‐2‐methyl‐4‐nitroaniline (DCMNA) is reported. LB multilayers of DCMNA are highly anisotropic showing a strong absorption for light polarized parallel to the dipping direction. Furthermore, optical second harmonic generation was observed from LB multilayers of DCMNA. The SH signal was always polarized parallel to the dipping direction; and maximum SH intensity was obtained when the direction of the fundamental wave was also polarized parallel to this direction. The SH intensity increased quadratically with the number of LB layers up to 50 layers. Preliminary x‐ray diffraction studies indicate a Y‐type arrangement for the molecules with a bilayer spacing of 3.77 nm and a strong tilt angle of 34° for the alkyl chains with respect to the substrate plane.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Jk Polymers and organics
78.66.Qn Polymers; organic compounds

Versatile waveguide polarizer incorporating an ultrathin discontinuous silver film

Mark J. Bloemer and Joseph W. Haus

Appl. Phys. Lett. 61, 1619 (1992); http://dx.doi.org/10.1063/1.107512 (3 pages) | Cited 19 times

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We demonstrate the first transverse magnetic (TM) pass waveguide polarizer suitable for integrated optic or fiber optic geometries. The polarizing properties of waveguides incorporating an ultrathin discontinuous silver film are due to excitation of a localized surface plasmon mode. The polarizers have a large bandwidth (≳100 nm), high extinction ratios, and do not rely on sensitive phase matching conditions. We illustrate these novel polarizing properties on ion‐exchanged planar waveguides overlayed with a 5‐nm‐mass thick silver film. The measured extinction ratio was 35 dB/mm at 836 nm with 2 dB/mm loss for the TM polarization. The theoretical analysis of the film properties and waveguide propagation losses is compared with the experiments.
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42.79.Ci Filters, zone plates, and polarizers
42.82.Gw Other integrated-optical elements and systems
42.81.Gs Birefringence, polarization
78.66.Bz Metals and metallic alloys

Low‐loss metallic hollow waveguides coated with durable and nontoxic ZnS

Yuji Matsuura and Mitsunobu Miyagi

Appl. Phys. Lett. 61, 1622 (1992); http://dx.doi.org/10.1063/1.107513 (2 pages) | Cited 2 times

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ZnS‐coated Ag hollow waveguides are newly proposed and fabricated to realize a durable and nontoxic waveguide for CO2 laser light transmission. The fabrication method is based on rf‐sputtering and electroplating techniques and a polyimide tube is used as a hollow mandrel. As a result of measurements, low‐loss property of the ZnS‐coated waveguide is shown and the beam profile with a sharp energy peak is obtained. The result of the aging test proves good durability of the ZnS‐coated Ag waveguide.
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42.79.Gn Optical waveguides and couplers
42.81.-i Fiber optics

CO2 laser power transmission and laser induced breakdown in AgClxBr1−x crystals, polycrystals, and fibers

L. Nagli and A. Katzir

Appl. Phys. Lett. 61, 1624 (1992); http://dx.doi.org/10.1063/1.108457 (2 pages) | Cited 3 times

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Laser‐induced breakdown (LIB) thresholds in AgClxBr1−x crystals, polycrystals, and fibers were studied under CO2 pulse laser excitation. The limit value of LIB threshold Pc of the bulk crystals is about 4×108 W/cm2 for x=1 and 8×108 W/cm2 for x=0 under 100 ns transversely excited atmospheric pressure laser excitation. The LIB threshold in fibers is much smaller; about 2×107 W/cm2. The dependence of the LIB on composition and temperature suggests that the main cause for LIB is electron avalanche combined with multiphonon absorption at 10.6 μm in silver halide crystals.
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42.70.Km Infrared transmitting materials
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
42.81.Cn Fiber testing and measurement of fiber parameters

Re‐evaluation of the thermal stability of optically nonlinear polymeric guest‐host systems

M. Stähelin, D. M. Burland, M. Ebert, R. D. Miller, B. A. Smith, R. J. Twieg, W. Volksen, and C. A. Walsh

Appl. Phys. Lett. 61, 1626 (1992); http://dx.doi.org/10.1063/1.108497 (3 pages) | Cited 46 times

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Guest‐host polymer systems with potential use in electro‐optic devices are discussed. The polymer host is a polyimide and the guest chromophores are 2,4,5‐triarylimidazoles (lophines). Poling stabilities have been obtained by extrapolating the second harmonic generation decay using a stretched exponential function and extrapolated lifetimes greater than a year at 80 °C have been obtained. In addition, an apparent relationship between the stability of poled order and the glass transition temperature is discussed.
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42.70.Jk Polymers and organics
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Jq Electro-optical effects

Synthesis of diamond/β‐SiC composite films by microwave plasma assisted chemical vapor deposition

X. Jiang and C.‐P. Klages

Appl. Phys. Lett. 61, 1629 (1992); http://dx.doi.org/10.1063/1.108458 (3 pages) | Cited 18 times

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A new kind of microcrystalline composite films consisting of diamond and cubic silicon carbide (β‐SiC) has been synthesized in a microwave plasma assisted chemical vapor deposition process (MWCVD), using a gas mixture of hydrogen, methane, and tetramethylsilane. Single crystalline (111) silicon wafers and polycrystalline tungsten carbide, which were treated with diamond paste before the deposition, were used as substrates. Scanning electron microscopy, electron probe microanalysis, infrared absorption, Raman scattering, and x‐ray diffraction analysis were performed to characterize the film quality and the crystallographic structure. The results show that the film structure and the volume fractions of diamond and β‐SiC components depend mainly on the reactive gas concentrations and on the diamond nucleation density. By adjusting the reactive gas concentration, the volume fraction of the components can be varied over the film thickness. In addition, the growth texture of the diamond phases can be influenced by the β‐SiC phase orientation.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
68.55.Nq Composition and phase identification

Oriented nickel‐titanium shape memory alloy films prepared by annealing during deposition

Kathleen R. C. Gisser, John D. Busch, A. David Johnson, and Arthur B. Ellis

Appl. Phys. Lett. 61, 1632 (1992); http://dx.doi.org/10.1063/1.108434 (3 pages) | Cited 32 times

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Nickel‐titanium shape memory alloy films, between 2 and 10 μm thick, were sputter deposited onto (100) silicon substrates. Films deposited onto a substrate at ambient temperature were amorphous; however, several post‐deposition annealing procedures produced crystalline films exhibiting the B2‐to‐B19′ phase transition that gives rise to the shape memory effect. Films that were deposited onto a heated substrate, 350–460 °C, crystallized during deposition, eliminating the need for a separate annealing step. Powder x‐ray diffraction indicated that these films were highly oriented, with the NiTi (110)B2 face parallel to the silicon substrate (100) face.
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81.15.Cd Deposition by sputtering
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.66.Dk Alloys
81.30.Bx Phase diagrams of metals, alloys, and oxides

X‐ray damage in low temperature ultrathin silicon dioxide

K. H. Lee, S. A. Campbell, R. Nachman, M. Reilly, and F. Cerrina

Appl. Phys. Lett. 61, 1635 (1992); http://dx.doi.org/10.1063/1.108435 (3 pages) | Cited 4 times

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The electrical characteristics of ultrathin oxides used in an x‐ray lithography n‐channel metal‐oxide‐silicon process grown at 700 and 950 °C were studied. The breakdown field exceeded 15 MV/cm for both low and high temperature oxides and the interface trap density of the fresh oxide was of order of 1010 cm−2 eV−1. Oxides grown at 950 °C had a lower interface trap density than 700 °C oxides, but 950 °C oxides are more sensitive to x‐ray radiation damage. After 350 °C hydrogen annealing about 80% of the radiation damage in the form of interface traps was recovered.
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85.30.Tv Field effect devices
85.40.Hp Lithography, masks and pattern transfer
61.80.Cb X-ray effects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

On the mechanism of dimensional change of neutron irradiated graphite

T. Tanabe, S. Muto, and K. Niwase

Appl. Phys. Lett. 61, 1638 (1992); http://dx.doi.org/10.1063/1.108436 (3 pages) | Cited 20 times

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In order to investigate the mechanism of large volume expansion of graphite due to neutron irradiation we have made in situ observation of damage structure of graphite with a high resolution transmission electron microscope (HRTEM). Both bending and randomizing the orientation of broken basal planes are proposed to be the origin for the large volume expansion of the irradiated graphite. It is also found that graphite easily loses its lattice ordering in the basal planes as demonstrated by halo rings in the (1010) diffraction pattern, while hardly losing its layered structure, i.e., (002) spots are retained.
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61.80.Hg Neutron radiation effects

Thermo‐electro‐optic switch based on polymer dispersed liquid crystal composite

Sukhmal C. Jain and Ravindra S. Thakur

Appl. Phys. Lett. 61, 1641 (1992); http://dx.doi.org/10.1063/1.108437 (2 pages) | Cited 10 times

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A new type of thermo‐electro‐optic switch based on polymer dispersed liquid crystal (PDLC) composite is reported below. The PDLC composite has been made by dispersing a dual frequency addressable liquid crystal (LC) mixture in an isotropic polymer matrix in the form of very fine droplets of micron and submicron sizes. The PDLC cell in the presence of an electric field can be made to switch from transparent to scattering state or vice‐versa by varying its temperature by ±≥1 °C, respectively. Moreover, the transition temperature of the PDLC switch can be set by varying the frequency of the electric biasing field.
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61.30.-v Liquid crystals
42.79.Kr Display devices, liquid-crystal devices

Growth of epitaxial Pb(Zr,Ti)O3 films by pulsed laser deposition

J. Lee, A. Safari, and R. L. Pfeffer

Appl. Phys. Lett. 61, 1643 (1992); http://dx.doi.org/10.1063/1.108438 (3 pages) | Cited 36 times

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Lead zirconate titanate (PZT) thin films with a composition near the morphotropic phase boundary have been grown on MgO (100) and Y1Ba2Cu3Ox (YBCO) coated MgO substrates. Substrate temperature and oxygen pressure were varied to achieve ferroelectric films with a perovskite structure. Films grown on MgO had the perovskite structure with an epitaxial relationship with the MgO substrate. On the other hand, films grown on the YBCO/MgO substrate had an oriented structure to the surface normal with a misorientation in the plane parallel to the surface. The measured dielectric constant and loss tangent at 1 kHz were 670 and 0.05, respectively. The remnant polarization and coercive field were 42 μC/cm2 and 53 kV/cm. A large internal bias field (12 kV/cm) was observed in the as‐deposited state of the undoped PZT films.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
77.55.-g Dielectric thin films

Low‐temperature growth of high resistivity GaP by gas‐source molecular beam epitaxy

J. Ramdani, Y. He, M. Leonard, N. El‐Masry, and S. M. Bedair

Appl. Phys. Lett. 61, 1646 (1992); http://dx.doi.org/10.1063/1.108439 (3 pages) | Cited 8 times

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GaP films were epitaxially grown on GaP substrates at a low temperature ∼200 °C using gas source molecular beam epitaxy (MBE). The lattice constant of these LT GaP films was found to be larger than that of both the GaP substrate and films grown at high temperatures. These results can be explained by excess phosphorus present in these LT films. The resistivity of these films is comparable to that of the semi‐insulating (SI) GaP substrate. These results are considered the first demonstration of high resistivity, semi‐insulating LT GaP films.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Ey III-V semiconductors
68.55.Nq Composition and phase identification

Photoinduced hydrogen loss from porous silicon

R. T. Collins, M. A. Tischler, and J. H. Stathis

Appl. Phys. Lett. 61, 1649 (1992); http://dx.doi.org/10.1063/1.108440 (3 pages) | Cited 73 times

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In this letter we show that UV illumination of porous silicon causes a decrease in its luminescence efficiency. Infrared measurements allow us to associate the efficiency decrease with a loss of hydrogen from the silicon surface. We also find that the rate at which the luminescence intensity degrades increases rapidly when the illumination energy exceeds a threshold near 3.0 eV. We conclude that the decrease in photoluminescence efficiency occurs as a result of optically induced hydrogen desorption and discuss possible explanations for the energy threshold.  
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78.55.Hx Other solid inorganic materials
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Observation of magnetic focusing in two‐dimensional hole systems

J. J. Heremans, M. B. Santos, and M. Shayegan

Appl. Phys. Lett. 61, 1652 (1992); http://dx.doi.org/10.1063/1.108441 (3 pages) | Cited 29 times

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We report the first observation of transverse magnetic hole focusing in high quality two‐dimensional hole systems confined in square and triangular quantum wells grown on (311)A GaAs substrates. The results demonstrate ballistic hole transport over distances up to 11 μm and allow us to probe the constant energy contours in k‐space for these two types of confinement.
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73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Photoemission study of porous silicon

A. Roy, A. Chainani, D. D. Sarma, and A. K. Sood

Appl. Phys. Lett. 61, 1655 (1992); http://dx.doi.org/10.1063/1.108442 (3 pages) | Cited 19 times

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We report x‐ray photoelectron spectra from a porous silicon film (PSF) with a photoluminescence peak at 1.8 eV, as a function of argon ion etching time to probe the composition in the surface and the subsurface regions. The results clearly indicate that the surface layer is essentially a fluorine admixed SiO2 phase, while the Si:O:F composition of the subsurface region 2:1:0.2. With the possibility of the existence of hydrogen in this composition it appears that beyond the highly oxidized surface, PSF is a fluorine substituted siloxene derivative, which can be responsible for the visible photoluminescence.
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79.60.-i Photoemission and photoelectron spectra
78.55.Hx Other solid inorganic materials

Molecular‐beam‐epitaxial growth of n‐AlGaAs on clean Cl2‐gas etched GaAs surfaces and the formation of high mobility two‐dimensional electron gas at the etch‐regrown interfaces

Y. Kadoya, H. Noge, H. Kano, H. Sakaki, N. Ikoma, and N. Nishiyama

Appl. Phys. Lett. 61, 1658 (1992); http://dx.doi.org/10.1063/1.108496 (3 pages) | Cited 8 times

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By using an ultrahigh vacuum multichamber process system, very clean GaAs surface is successfully prepared by chlorine‐gas etching and AlGaAs is subsequently grown by molecular beam epitaxy to show that two‐dimensional electron gas is successfully formed at etch‐regrown AlGaAs/GaAs interface. Mobility as high as 114 000 cm2/V s at 9.8 K is achieved for the carrier concentration NS=4.5×1011 cm−2. From the secondary‐ion‐mass‐spectroscopy measurement, the carbon concentration at the interface is estimated to be 2×1010 cm−2, and is found to be a dominant scatterer for the two‐dimensional electrons. A transmission‐electron‐microscope image has evidenced a very flat feature of etch‐regrown interface.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.65.-b Surface treatments

Optical gain and ultrafast nonlinear response in GaAs/AlAs type‐II quantum wells

W. S. Fu, G. R. Olbright, J. F. Klem, and J. S. Harris

Appl. Phys. Lett. 61, 1661 (1992); http://dx.doi.org/10.1063/1.108443 (3 pages) | Cited 3 times

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We describe the femtosecond optical gain nonlinearities for the unusual case of electrons which are distributed between the direct‐GaAs and indirect‐AlAs layers in a GaAs/AlAs type‐II multiple quantum‐well (MQW) structure. Due to the spatial separation of electrons from the holes, we observe a significant increase in the gain lifetime (≳150 ps) in type‐II MQWs, as compared to type ‐I MQWs (∼50 ps). In addition, we investigate the effect of a longitudinal electric field on Γ‐X energy splitting in type‐II structures. Finally, at early times we observe an ultrafast nonlinear optical response in the gain/absorption spectra which we attributed to electron‐hole scattering without carrier loss.  
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.47.-p Spectroscopy of solid state dynamics

Enhanced electro‐optic effect in amorphous hydrogenated silicon based waveguides

M. Zelikson, J. Salzman, K. Weiser, and J. Kanicki

Appl. Phys. Lett. 61, 1664 (1992); http://dx.doi.org/10.1063/1.108444 (3 pages) | Cited 3 times

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We report on a direct measurement of the electro‐optic effect in amorphous hydrogenated silicon based waveguides. The observed phase modulation with an applied voltage shows evidence of a threshold voltage below which the electro‐optic effect is weak. At high voltages the electro‐optic phase modulation is nonquadratic and significantly enhanced with respect to the bulk effect in amorphous silicon. These results are explained in terms of a model which considers inhomogeneous electric fields within the silicon layer due to voltage dependent space charges.
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42.79.Gn Optical waveguides and couplers
78.66.-w Optical properties of specific thin films
42.82.Et Waveguides, couplers, and arrays

n‐ and p‐type in‐plane gated field effect transistors directly written on a semi‐insulating GaAs substrate

Y. Hirayama

Appl. Phys. Lett. 61, 1667 (1992); http://dx.doi.org/10.1063/1.108445 (3 pages) | Cited 6 times

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A new type in‐plane gated field effect transistor where the semi‐insulating substrate itself is used as a gate insulator region is proposed. n‐ and p‐type in‐plane gated field effect transistors are fabricated on a semi‐insulating GaAs substrate by focused ion beam scanning of Si++ and Be++, respectively. These in‐plane gated field effect transistors are found to operate well at room temperature.  
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85.30.Tv Field effect devices
85.40.Hp Lithography, masks and pattern transfer
73.40.Ty Semiconductor-insulator-semiconductor structures

Hydrogen diffusion in polycrystalline silicon thin films

W. B. Jackson, N. M. Johnson, C. C. Tsai, I.‐W. Wu, A. Chiang, and D. Smith

Appl. Phys. Lett. 61, 1670 (1992); http://dx.doi.org/10.1063/1.108446 (3 pages) | Cited 34 times

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Grain boundaries in undoped polycrystalline silicon (poly‐Si) thin films are shown to act as efficient hydrogen traps rather than as paths of enhanced diffusion. A comparison of hydrogen diffusion in poly‐Si and undoped single‐crystal silicon (c‐Si) demonstrates that the diffusion in poly‐Si is significantly suppressed compared to c‐Si. These results have significant implications for hydrogenation of poly‐Si thin‐film transistors.
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66.30.J- Diffusion of impurities
61.72.uf Ge and Si

In0.53Ga0.47As p‐i‐n photodiodes with transparent cadmium tin oxide contacts

Paul R. Berger, Niloy K. Dutta, George Zydzik, H. M. O’Bryan, Ursula Keller, Peter R. Smith, John Lopata, D. Sivco, and A. Y. Cho

Appl. Phys. Lett. 61, 1673 (1992); http://dx.doi.org/10.1063/1.108447 (3 pages) | Cited 6 times

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A new type of p‐i‐n In0.53Ga0.47As photodiode having an optically transparent composite top electrode consisting of a thin semitransparent metal layer and a transparent cadmium tin oxide (CTO) layer was investigated. The composite functions as the n or p contact, an optical window, and an antireflection coating. The transparent contact also prevents shadowing of the active layer by the top electrode, thus allowing greater collection of incident light. Since the CTO contact is nonalloyed, interdiffusion into the i‐region is not relevant avoiding an increased dark current. The photodiodes exhibited leakage currents of ≤8 nA and some as low as 23 pA, with reverse breakdown voltages of ≥15–17 V. Responsivity was measured using a 1.55 μm InGaAsP diode laser focused onto an unpassivated 60 μm diam p‐i‐n photodiode and was ≥0.41 A/W. Photoresponse of the diodes to 3 ps pulses from a Nd:YLF laser (λ=1.047 μm) was 169 and 86 ps for the 60 and 9 μm diodes, respectively. The maximum frequency response of the 9 μm diode is packaging limited, and is expected to have an intrinsic response time of 20–30 ps.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
81.15.Cd Deposition by sputtering
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Arsenic doping of GeSi epitaxial layers grown in the dichlorosilane/germane system

W. H. Liu, J. D. Leighton, and S. A. Campbell

Appl. Phys. Lett. 61, 1676 (1992); http://dx.doi.org/10.1063/1.108448 (3 pages) | Cited 2 times

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In this letter we detail the effects of arsine on Ge1−xSix growth rate and doping. We have observed for the first time that the growth process is no longer well described by a simple first‐order reaction. The growth‐rate data instead are consistent with a second‐order reaction, with a substantial change in the activation energy. The electron carrier concentration and mobility have been measured as functions of arsine flow and compared to similar data from silicon growth.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Defects in low‐temperature‐grown GaAs annealed at 800 °C

I. Ohbu, M. Takahama, and K. Hiruma

Appl. Phys. Lett. 61, 1679 (1992); http://dx.doi.org/10.1063/1.108449 (3 pages) | Cited 20 times

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GaAs grown by molecular beam epitaxy (MBE) at 300 °C is annealed at 800 °C and optical properties are studied using photoluminescence spectroscopy (PL) and infrared‐absorption spectroscopy. Three kinds of defects are observed. One of them is attributed to gallium vacancies with an energy level at 0.3 eV above the valence‐band edge. The concentration of gallium vacancies is increased by the high‐temperature annealing. The GaAs can render inactive free electrons of 1.3×1018 cm−3 even after annealing at 800 °C for 10 min.
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71.55.Eq III-V semiconductors
61.72.jd Vacancies
61.72.jj Interstitials
78.55.Cr III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Deep levels induced by high‐energy boron ion implantation into p‐silicon

H. Sayama, M. Takai, Y. Yuba, S. Namba, K. Tsukamoto, and Y. Akasaka

Appl. Phys. Lett. 61, 1682 (1992); http://dx.doi.org/10.1063/1.108450 (3 pages) | Cited 7 times

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Defects induced by B+ implantation at 0.7 MeV into n+p diodes were investigated using leakage current and deep level transient spectroscopy (DLTS). Leakage current increases drastically by implantation to a dose of more than 3×1013 cm−2. DLTS spectra reveal two hole trap levels in the shallower region than the projected range of B+. One level at 265 K (Ev+0.65 eV) is associated with point defects around dislocation kinks formed by B+ implantation to doses of more than 3×1013 cm−2. Another level at 290 K (Ev+0.67 eV) is mainly responsible for the excess leakage current. This level was, for the first time, found in p‐Si after high‐energy ion implantation followed by annealing.
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61.80.Jh Ion radiation effects
61.72.uf Ge and Si
71.55.Ht Other nonmetals
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