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19 Oct 1992

Volume 61, Issue 16, pp. 1877-1988

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Epitaxial growth of strain‐free Ge films on Si substrates by solid phase epitaxy at ultrahigh pressure

Hiroshi Ishiwara, Takayoshi Sato, and Akira Sawaoka

Appl. Phys. Lett. 61, 1951 (1992); http://dx.doi.org/10.1063/1.108373 (3 pages) | Cited 5 times

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A novel method to solve the thermal mismatch problem in heteroepitaxial growth has been presented, in which an amorphous film deposited on a single‐crystal substrate is grown by solid phase epitaxy at ultrahigh pressure. It has been theoretically predicted in such systems as Ge/Si and GaAs/Si that the difference of the thermal expansion coefficient can be compensated by that of elastic strain generated by hydrostatic pressure. Experimentally, it has been found that the residual strain in Ge films on Si substrates is linearly decreased with increase of the pressure during annealing, while the defect density in the film is kept constant. It has been presumed from these results that a strain‐free Ge film can be grown on a Si substrate by solid phase epitaxy at 2.5 GPa.
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81.15.Np Solid phase epitaxy; growth from solid phases
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
65.40.De Thermal expansion; thermomechanical effects
62.50.-p High-pressure effects in solids and liquids

New oxide phase with wide band gap and high electroconductivity, MgIn2O4

Naoyuki Ueda, Takahisa Omata, Naoko Hikuma, Kazushige Ueda, Hiroshi Mizoguchi, Takuya Hashimoto, and Hiroshi Kawazoe

Appl. Phys. Lett. 61, 1954 (1992); http://dx.doi.org/10.1063/1.108374 (2 pages) | Cited 52 times

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It was demonstrated that the MgIn2O4 spinel is a very promising material as a transparent electronic conductor. By the measurements of diffuse reflectance spectra, the optical band gap of MgIn2O4 (∼3.4 eV) was found to be wider than that of ITO (indium tin oxide). Electrical conductivity of the sintered sample of MgIn2O4 at room temperature has reached almost 102 S cm−1 with no intentional doping. The conduction was found to be due to electrons introduced from oxygen vacancies.
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72.80.Jc Other crystalline inorganic semiconductors
78.40.Ha Other nonmetallic inorganics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Observation of quantum wire formation at intersecting quantum wells

A. R. Goñi, L. N. Pfeiffer, K. W. West, A. Pinczuk, H. U. Baranger, and H. L. Stormer

Appl. Phys. Lett. 61, 1956 (1992); http://dx.doi.org/10.1063/1.108375 (3 pages) | Cited 74 times

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We report the first observation of a quantum bound state formed at the junction of two intersecting quantum wells in the shape of a T. The atomically precise T junctions are fabricated by a novel cleaved edge overgrowth process in the AlGaAs/GaAs system. The identification of bound states with energies in excess of 20 meV is made by optical emission and absorption spectroscopy. Such quantum wire states are caused by the unique confinement of the lowest state wave function to the region of the T junction.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Effects of ordering on the operation of AlGaInP lasers grown by metalorganic chemical vapor deposition

K. Nakano, A. Toda, T. Yamamoto, and A. Ishibashi

Appl. Phys. Lett. 61, 1959 (1992); http://dx.doi.org/10.1063/1.108376 (3 pages) | Cited 21 times

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We have observed large differences in the lasing wavelength and threshold current for [110]‐ and [110]‐striped AlGaInP lasers that are fabricated from a single wafer grown by metalorganic chemical vapor deposition. With the laser stripe aligned parallel to the [110] direction, the lasing wavelength is about 6 nm shorter than that with the [110] stripe. The threshold current (Ith) of the [110]‐striped laser is 10 mA higher than that of the [110]‐striped laser. The differences are found to be well explained by the splitting of the valence band due to the (111) ordering in the AlGaInP lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Proposal and verification of a new visible light emitter based on wide band gap II‐VI semiconductors

M. C. Phillips, M. W. Wang, J. F. Swenberg, J. O. McCaldin, and T. C. McGill

Appl. Phys. Lett. 61, 1962 (1992); http://dx.doi.org/10.1063/1.108353 (3 pages) | Cited 14 times

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We propose a new device structure for obtaining visible light emission from wide band gap semiconductors. This heterojunction structure avoids ohmic contacting problems by using only the doping types which tend to occur naturally in II‐VI semiconductors, while using a novel injection scheme to obtain efficient minority carrier injection into the wider band gap semiconductor. To verify this proposal we have fabricated green light emitting structures using n‐CdSe and p‐ZnTe regions separated by a graded MgxCd1−xSe injection region. Room temperature electroluminescence spectra from these devices demonstrate the effectiveness of the injection scheme, while the current‐voltage characteristics show the merits of avoiding difficult ohmic contacts. We further show how the structure can be extended to blue wavelengths and beyond by opening up the band gap of the ZnTe recombination region with a MgyZn1−yTe alloy.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Novel technique for preparing porous silicon

R. E. Hummel and Sung‐Sik Chang

Appl. Phys. Lett. 61, 1965 (1992); http://dx.doi.org/10.1063/1.108331 (3 pages) | Cited 82 times

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We have performed photoluminescence studies on porous, p‐type as well as n‐type silicon wafers which have been prepared in air or in a dry nitrogen atmosphere, utilizing a spark‐erosion technique. This sample preparation, which does not involve aqueous solutions or fluorine contaminants, yields similar photoluminescence spectra as those obtained by anodic etching in HF or unbiased etching in various HF‐containing reagents. The wavelength of the photoluminescence peaks are somewhat shifted into the blue region compared to porous silicon obtained by anodic etching. We have also taken photoluminescence spectra on amorphous silicon, SiO2, and oxidized, annealed porous silicon. Our results are interpreted in the light of the presently suggested theories.
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78.55.Hx Other solid inorganic materials
81.65.-b Surface treatments
81.40.Tv Optical and dielectric properties related to treatment conditions

High‐resolution transmission electron microscopy study of the radiation damage defects in high temperature superconductors

Y. J. Zhao, W. K. Chu, J. R. Liu, J. Kulik, H. Zandbergen, and Y. K. Tao

Appl. Phys. Lett. 61, 1968 (1992); http://dx.doi.org/10.1063/1.108332 (3 pages) | Cited 3 times

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High resolution transmission electron microscopy (HREM) reveals that MeV heavy ions like Au generate radiation damage defects, a few nanometers in size, in surface regions (about 100 Å) of the superconductors. Much larger defects have been found in the deeper regions of the superconductor sample, which is believed to be due to the larger damage cascade created by the slower ions after their electronic energy loss along the track. Monte Carlo simulation (trim) shows the same result in damage size as the HREM study. Light ions, like protons, generate mostly point defects, which are not visible to current electron microscopy. These point defects, although they can pin the flux, are not ideal for flux pinning, due to their small sizes.
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61.80.Jh Ion radiation effects
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
74.70.-b Superconducting materials other than cuprates

Molecular beam epitaxial growth of superconducting Ba2DyCu3O6.5 thin films at 420 °C using NO2 as an oxidant

Kei‐ichiro Norimoto, Rika Sekine, Masami Mori, Takashi Hanada, Masahiro Kudo, and Maki Kawai

Appl. Phys. Lett. 61, 1971 (1992); http://dx.doi.org/10.1063/1.108333 (3 pages) | Cited 7 times

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A superconducting Ba2DyCu3O6.5 (orthorhombic II phase) thin film is formed on a MgO(100) substrate at 420 °C by molecular beam epitaxial growth using NO2 as an oxidant. Metal elements Ba, Dy, and Cu are sequentially supplied from K cells onto MgO(100) at 420 °C under a flow of 5×10−5 Pa of NO2. The film gradually cooled in situ under the identical pressure of NO2 shows metallic behavior in the normal state and a Tczero of 50 K. The lattice constant of the c axis is observed at 11.75 Å, which is known as an orthorhombic II phase of bulk Ba2DyCu3O6.5. Due to the slow deposition rate, the film thus formed is oriented with the c axis perpendicular to the surface in spite of the low‐temperature growth condition.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures

Scanning Hall probe microscopy

A. M. Chang, H. D. Hallen, L. Harriott, H. F. Hess, H. L. Kao, J. Kwo, R. E. Miller, R. Wolfe, J. van der Ziel, and T. Y. Chang

Appl. Phys. Lett. 61, 1974 (1992); http://dx.doi.org/10.1063/1.108334 (3 pages) | Cited 110 times

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We describe the implementation of a scanning Hall probe microscope of outstanding magnetic field sensitivity (∼0.1 G) and unprecedented spatial resolution (∼0.35 μm) to detect surface magnetic fields at close proximity to a sample. Our microscope combines the advantages of a submicron Hall probe fabricated on a GaAs/Al0.3Ga0.7As heterostructure chip and the scanning tunneling microscopy technique for precise positioning. We demonstrate its usefulness by imaging individual vortices in high Tc La1.85Sr0.15CuO4 films and superconducting networks, and magnetic bubble domains.
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07.55.-w Magnetic instruments and components
74.25.-q Properties of superconductors
75.70.Rf Surface magnetism

Phase stability limits of Bi2Sr2Ca1Cu2O8+δ and Bi2Sr2Ca2Cu3O10+δ

L. M. Rubin, T. P. Orlando, J. B. Vander Sande, G. Gorman, R. Savoy, R. Swope, and R. Beyers

Appl. Phys. Lett. 61, 1977 (1992); http://dx.doi.org/10.1063/1.108335 (3 pages) | Cited 34 times

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We determined the phase stability limits of Bi2Sr2Ca1Cu2O8+δ and Bi2Sr2Ca2Cu3O10+δ in the temperature range 650–880 °C using a solid‐state electrochemical technique. These phases decompose by incongruent melting above ∼790 °C, whereas they decompose by a solid‐state reaction at lower temperatures. The solid‐state decomposition reaction is reversible for Bi2Sr2Ca1Cu2O8+δ, but not for Bi2Sr2Ca2Cu3O10+δ.
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74.70.-b Superconducting materials other than cuprates
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations
64.70.-p Specific phase transitions

Far‐infrared Fabry–Perot resonator with high Tc YBa2Cu3O7−δ films on silicon plates

E. V. Pechen, S. Vent, B. Brunner, A. Prückl, S. Lipp, G. Lindner, O. Alexandrov, J. Schützmann, and K. F. Renk

Appl. Phys. Lett. 61, 1980 (1992); http://dx.doi.org/10.1063/1.108336 (3 pages) | Cited 5 times

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We report on a far‐infrared Fabry–Perot resonator consisting of two high Tc YBa2Cu3O7−δ films on silicon plates. By pulsed laser deposition we prepared on the (100) silicon plates c‐axis oriented epitaxial films (thickness ∼30 nm) with zero resistance at 88.5 K. We demonstrate operation of the resonator in the terahertz frequency range, up to ∼20 THz. At low temperature a high peak transmissivity (between 0.2 and 0.6) and a finesse of the order of 10 have been reached.
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85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices
74.70.-b Superconducting materials other than cuprates

Oxidizer partial pressure window for YBa2Cu3O7−x thin film formation by metalorganic chemical vapor deposition

C. S. Chern, J. Zhao, P. E. Norris, S. M. Garrison, K. Yau, Y. Q. Li, B. M. Gallois, and B. H. Kear

Appl. Phys. Lett. 61, 1983 (1992); http://dx.doi.org/10.1063/1.108337 (3 pages) | Cited 6 times

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We have conducted a systematic study of oxidizer partial pressure effects on both the superconducting transport properties and structural properties of YBa2Cu3O7−x (YBCO) films grown by conventional metalorganic chemical vapor deposition (MOCVD). Superconducting YBCO thin films were grown in partial N2O pressures ranging from 0.4 to 45 Torr and at substrate temperatures of 500 and 700 °C. We have observed a window in oxidizer partial pressure within which YBCO thin films can be formed in the as‐deposited state by the MOCVD process. A trend of increasing b‐axis orientation as the oxidizer partial pressure increased was revealed by detailed x‐ray diffraction. The reduction of superconducting properties for films grown at high oxidizer partial pressure might result from the lack of surface mobility. Oxygen deficiency in the films was ruled out as the cause of the degraded properties.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
74.70.-b Superconducting materials other than cuprates
FREE

Comment on: ‘‘Elementary formula for the magneto‐optic Kerr effect from model superlattices’’

R. Atkinson

Appl. Phys. Lett. 61, 1986 (1992); http://dx.doi.org/10.1063/1.108338 (1 page) | Cited 1 time

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Abstract Unavailable
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75.70.-i Magnetic properties of thin films, surfaces, and interfaces
78.20.Ls Magneto-optical effects
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
78.66.Bz Metals and metallic alloys
FREE

Response to ‘‘Comment on ‘Elementary Formula for the magneto‐optic Kerr effect from model superlattices’ ’’

J. Zak, E. R. Moog, C. Liu, and S. D. Bader

Appl. Phys. Lett. 61, 1986 (1992); http://dx.doi.org/10.1063/1.108492 (2 pages)

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Abstract Unavailable
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75.70.-i Magnetic properties of thin films, surfaces, and interfaces
78.20.Ls Magneto-optical effects
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
78.66.Bz Metals and metallic alloys
FREE

Erratum: ‘‘Photoreflectance study of photovoltage effects in GaAs diode structures’’ [Appl. Phys. Lett.60, 2110 (1992)]

V. M. Airaksinen and H. K. Lipsanen

Appl. Phys. Lett. 61, 1988 (1992); http://dx.doi.org/10.1063/1.108501 (1 page)

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Abstract Unavailable
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72.40.+w Photoconduction and photovoltaic effects
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
99.10.Cd Errata
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