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2 Nov 1992

Volume 61, Issue 18, pp. 2129-2244

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Differential gain in InP‐based strained layer multiple quantum well lasers

D. Nichols and P. Bhattacharya

Appl. Phys. Lett. 61, 2129 (1992); http://dx.doi.org/10.1063/1.108325 (3 pages) | Cited 4 times

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Compressive biaxial strain has been predicted to enhance the small‐signal modulation bandwidth of quantum well lasers, owing to increased differential gain in these devices. However, the effect of tensile strain on these devices is less clear. We have investigated the effects of both compressive and tensile strain on the differential gain for multiple quantum well lasers with InxGa1−xAs quantum wells for 0.33≤x≤0.73. We observe markedly increased differential gain for both compressive and tensile strain, indicating that large modulation bandwidths can be obtained in both cases.  
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Photorefractive effect in a new organic system of doped nonlinear polymer

Yiping Cui, Yue Zhang, Paras N. Prasad, Jay S. Schildkraut, and David J. Williams

Appl. Phys. Lett. 61, 2132 (1992); http://dx.doi.org/10.1063/1.108326 (3 pages) | Cited 41 times

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We report an experimental observation of the photorefractive effect in a new polymeric system in which a nonlinear organic polymer was doped with a photosensitizer, borondiketonate (BDK), and a hole transport agent, tri‐p‐tolylamine (TTA). The photoconductivity and the electro‐optic effect have been studied. The process of grating formation with the applied field is presented. A strong electric field dependence of the diffraction coefficient has been observed.
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42.70.Jk Polymers and organics
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Optical bistability and nearly degenerate four‐wave mixing in a GaAlAs laser under intermodal injection

P. Schanne, H.‐J. Heinrich, W. Elsässer, and E. O. Göbel

Appl. Phys. Lett. 61, 2135 (1992); http://dx.doi.org/10.1063/1.108327 (3 pages) | Cited 8 times

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We demonstrate in a GaAlAs laser under intermodal optical injection, the existence of a domain, outside the injection‐locking range, where the sidemode becomes the dominant lasing mode and gives rise to nearly degenerate four‐wave‐mixing processes. It is shown experimentally and by computer simulation that this domain is asymmetric with respect to the frequency detuning, and bistability of its borderline occurs, with a characteristic dependence on the injected light power.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.55.Px Semiconductor lasers; laser diodes

Persistent hole burning of the nitrogen vacancy center and the 2.16 eV center of chemical‐vapor deposited diamond

Yoshihiro Yokota, Jing Sheng Ma, Toshimichi Ito, Akio Hiraki, Atusi Kurita, Takashi Kushida, and Hiroshi Kawarada

Appl. Phys. Lett. 61, 2138 (1992); http://dx.doi.org/10.1063/1.108299 (3 pages) | Cited 6 times

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The persistent spectral hole burning effect has been observed for the nitrogen vacancy (NV) center and the 2.16 eV center in chemical‐vapor deposited (CVD) diamond. This sideband is the first observation of spectral hole burning in CVD diamond. Holes are burned in the inhomogeneously broadened zero‐phonon lines of both the centers by dye lasers. The holes were observed by photoluminescence excitation spectroscopy, with monitoring of the phonon‐sideband emission, at temperatures up to 130 K for the NV center and up to 100 K for the 2.16 eV center.
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78.66.-w Optical properties of specific thin films
78.55.Hx Other solid inorganic materials
71.55.Ht Other nonmetals

Laser performance of Cr4+:Y2SiO5

C. Deka, B. H. T. Chai, Y. Shimony, X. X. Zhang, E. Munin, and M. Bass

Appl. Phys. Lett. 61, 2141 (1992); http://dx.doi.org/10.1063/1.108300 (3 pages) | Cited 31 times

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Laser action in Cr4+ doped yttrium‐orthosilicate Cr4+:Y2SiO5 cooled to 77 K was demonstrated for the first time with 1064 and 532 nm pumping from a pulsed Nd:YAG laser and broad band (@ 840 nm) pumping from a Q‐switched Cr:LiSAF laser.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Observation of the photorefractive effect in single‐domain BaTiO3 crystal fibera)

Fumihiko Ito, Ken‐ich Kitayama, and Kazuhiko Tomomatsu

Appl. Phys. Lett. 61, 2144 (1992); http://dx.doi.org/10.1063/1.108301 (3 pages) | Cited 6 times

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Photorefractive effects are, for the first time to our knowledge, observed in single‐domain tetragonal BaTiO3 fibers fabricated by the laser pedestal method. The diameter and length of the fiber are 250 μm and 2 mm, respectively. The photorefractivity is confirmed both by beam amplification through two‐wave mixing and holographic image storage.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.81.Cn Fiber testing and measurement of fiber parameters

Theoretical analysis of gain saturation coefficients in InGaAs/AlGaAs strained layer quantum well lasers

Shunji Seki, Paul Sotirelis, Karl Hess, Takayuki Yamanaka, and Kiyoyuki Yokoyama

Appl. Phys. Lett. 61, 2147 (1992); http://dx.doi.org/10.1063/1.108302 (3 pages) | Cited 14 times

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The gain saturation coefficient ϵ of InGaAs/AlGaAs strained layer quantum well lasers (SL‐QWLs) is calculated as a function of strain from intrasubband relaxation times. The intrasubband relaxation times are in turn obtained within the random phase approximation (RPA) including carrier‐carrier as well as carrier‐polar optical phonon interactions. The band structures are included by using the Luttinger–Kohn Hamiltonian [Phys. Rev. 97, 869 (1955)] and a multiband effective mass equation. It is demonstrated that the gain saturation coefficient increases with compressive strain in the active layer of quantum wells due to a corresponding increase of the intrasubband relaxation time.
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42.55.Px Semiconductor lasers; laser diodes
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Combined distributed feedback and Fabry–Perot structures with a phase‐matching layer for optical bistable devices

J. He and M. Cada

Appl. Phys. Lett. 61, 2150 (1992); http://dx.doi.org/10.1063/1.108303 (3 pages) | Cited 38 times

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A combined distributed feedback and Fabry–Perot (DFB/FP) structure with a phase‐matching layer is proposed for optical bistable devices. Using a simple and versatile nonlinear transfer‐matrix method, we demonstrate that the DFB/FP structure can have a much lower bistability threshold than a single DFB structure with a comparable total thickness. The combined structure can also have lower threshold and less sensitivity to absorption than a traditional nonlinear Fabry–Perot etalon.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Electro‐optic microwave measurements in the frequency domain

S. Loualiche and F. Clerot

Appl. Phys. Lett. 61, 2153 (1992); http://dx.doi.org/10.1063/1.108304 (3 pages) | Cited 1 time

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A new electro‐optic system is developed to probe microwave signals on nonlinear crystals. The method uses two narrow linewidth solid state continuous wave (cw) lasers. The beat frequency between the two cw lasers is set equal to the microwave frequency plus a few MHz. The wave mixing between the beat frequency and the microwave signal is used to down convert the high frequency signal from the GHz to the MHz range where it is treated and displayed. The actual frequency bandwidth of the method is limited by the excursion between the two lasers (in our case, 50 GHz).
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Increased optical damage resistance in Sc2O3‐doped LiNbO3

Joyce K. Yamamoto, Kenji Kitamura, Nobuo Iyi, Shigeyuki Kimura, Yasunori Furukawa, and Masayoshi Sato

Appl. Phys. Lett. 61, 2156 (1992); http://dx.doi.org/10.1063/1.108279 (3 pages) | Cited 74 times

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The optical damage of 1 mol % Sc2O3‐doped LiNbO3 was approximately two times smaller than an optical grade LiNbO3 measured as a function of Ar+ (λ=488 nm) irradiation time. Severe Ar+ beam distortion observed in the undoped LiNbO3 was not present in the Sc2O3‐doped LiNbO3. There was negligible shift in the OH− absorption band but a 10 nm blue shift was observed in the absorption edge, indicating that Sc3+ and Mg2+ incorporation may proceed by a different mechanism. This is the first of reported results, to the authors’ knowledge, of a trivalent dopant increasing the damage resistance level in LiNbO3.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.72.up Other materials

NF3 plasma generation by commercial 50 Hz alternating current discharge for dry etching

M. Konuma and E. Bauser

Appl. Phys. Lett. 61, 2159 (1992); http://dx.doi.org/10.1063/1.108280 (3 pages)

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We generate NF3 plasma for the first time by commercial 50 Hz ac discharge. Mass and energy analysis of the plasma shows the predominant positive ion NF2+, followed by the NF3+ parent ion, NF+, and F+. The measured energy distribution of the ions corresponds to the energy distribution expected from the time dependent plasma potential in a 50 Hz discharge. The plasma can be applied for native oxide removal from Si substrates.
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81.65.-b Surface treatments
52.80.Hc Glow; corona
52.70.Nc Particle measurements

Electrical conductivity of a pure C60 single crystal

C. Wen, J. Li, K. Kitazawa, T. Aida, I. Honma, H. Komiyama, and K. Yamada

Appl. Phys. Lett. 61, 2162 (1992); http://dx.doi.org/10.1063/1.108281 (2 pages) | Cited 41 times

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The temperature dependence of the electrical conductivity of a C60 single crystal is presented in this letter. The single‐crystal samples free from solvent contamination were grown up to a size of millimeters order by sublimation of C60 powder with oscillation of the crystal temperature. The electrical conductivity of the single crystal was measured at temperatures between 250 and 295 K. The sharp decrease of the electrical conductivity with temperature around 256 K was observed in association with the phase transition of C60.
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72.80.-r Conductivity of specific materials
72.20.-i Conductivity phenomena in semiconductors and insulators
71.55.Ht Other nonmetals
81.10.-h Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation

Elastic properties of 5‐mol % MgO doped LiNbO3 crystals measured by line focus beam acoustic microscopy

J. Kushibiki, T. Kobayashi, H. Ishiji, and N. Chubachi

Appl. Phys. Lett. 61, 2164 (1992); http://dx.doi.org/10.1063/1.108282 (3 pages) | Cited 9 times

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An ultrasonic method of line focus beam (LFB) acoustic microscopy is applied to quantitative characterization of LiNbO3 wafers destined for optical use. Commercial Z‐cut wafers obtained from two optical grade LiNbO3 crystals, with and without 5‐mol % MgO doping, are evaluated by measuring the leaky surface acoustic wave (LSAW) velocities. Doping of 5‐mol % MgO to LiNbO3 results in an increase of about 1% in the LSAW velocities and in a decrease of about 0.1% in density. Fewer elastic inhomogeneities are observed in the undoped wafer than in the MgO doped wafer. The measured LSAW velocities are compared with the chemical and physical properties, chemical composition, density, lattice constant, refractive index, and Curie temperature. It is shown that the LFB system has a much greater sensitivity and resolution in the determination of these properties than do other analytical methods. It is suggested that this method should be adopted as a new analytical technique for establishment of the crystal growth conditions and for evaluation of optical grade LiNbO3 wafers.
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43.35.Pt Surface waves in solids and liquids
43.35.Yb Ultrasonic instrumentation and measurement techniques
77.80.-e Ferroelectricity and antiferroelectricity
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Schottky barrier heights of the amorphous interlayer/Si interfaces in titanium thin films on (001)Si

H. R. Liauh, M. C. Chen, J. F. Chen, and L. J. Chen

Appl. Phys. Lett. 61, 2167 (1992); http://dx.doi.org/10.1063/1.108283 (3 pages) | Cited 4 times

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Schottky barrier heights (SBHs) of amorphous interlayer/Si interfaces in Ti thin films on (001)Si have been measured by forward current‐voltage technique. A‐interlayers were observed to form by cross‐sectional transmission electron microscopy in both Ti thin films on n‐ and p‐type silicon systems in samples annealed at temperatures of and lower than 450 °C for 30 s. Although the SBHs vary for about 0.05–0.08 eV for samples annealed over a temperature range from room temperature to 900 °C, SBHs at the a‐interlayer/n‐Si and a‐interlayer/p‐Si were measured to be 0.52–0.54 and 0.59–0.57 eV, respectively. Formation of homogeneous metal a‐interlayer/Si interfaces correlated with their SBHs in a number of refractory metal‐silicon systems promises to greatly clarify the SBH formation mechanisms.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.At Surface states, band structure, electron density of states
68.35.Fx Diffusion; interface formation

Fatal electromigration voids in narrow aluminum‐copper interconnect

J. H. Rose

Appl. Phys. Lett. 61, 2170 (1992); http://dx.doi.org/10.1063/1.108284 (3 pages) | Cited 70 times

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The shape and crystallography of fatal electromigration voids in near‐bamboo Al‐2 wt % Cu thin‐film conductors were studied with transmission electron microscopy. Fatal voids were typically slit shaped and intragranular. Voids formed with {111} faces and with the slit length parallel to a 〈022〉 direction. The void faces were inclined and resided in grains of varying surface crystallographic orientation. Void morphology was independent of initial precipitate condition.  
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66.30.Qa Electromigration
61.72.J- Point defects and defect clusters
85.40.Ls Metallization, contacts, interconnects; device isolation

Alloying behavior of gold atoms into nm‐sized copper clusters

H. Yasuda, H. Mori, M. Komatsu, and K. Takeda

Appl. Phys. Lett. 61, 2173 (1992); http://dx.doi.org/10.1063/1.108285 (2 pages) | Cited 8 times

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Alloying behavior of gold atoms into copper clusters has been studied using a 200 kV transmission electron microscope (TEM) equipped with a double source evaporator in the specimen chamber. Isolated copper clusters of approximately 4 nm in diameter were first prepared on a supporting film of amorphous carbon, and then gold atoms were deposited onto the same film kept at room temperature. Upon the deposition of gold, the copper clusters quickly changed into homogeneously mixed Cu‐Au alloy clusters. The gold diffusivities in the clusters estimated from the experimental results are at least 19 orders of magnitude faster than those in the bulk copper.
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66.30.-h Diffusion in solids

Device‐quality copper using chemical vapor deposition of β‐diketonate source precursors in liquid solution

Bo Zheng, Eric T. Eisenbraun, Jun Liu, and Alain E. Kaloyeros

Appl. Phys. Lett. 61, 2175 (1992); http://dx.doi.org/10.1063/1.108286 (3 pages) | Cited 25 times

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Device‐quality copper films were produced by chemical vapor deposition from copper(II) β‐diketonate precursors using a liquid delivery approach. This liquid delivery method exploits the high solubility of copper(II) β‐diketonate precursors in selected solvents, such as isopropanol and ethanol, to provide highly accurate, reproducible, and controllable flow rates of precursor and solvent mixtures to the reaction zone. The approach was successfully employed to produce high‐quality copper files from predetermined mixtures of bis(hexafluoroacetylacetonato) copper(II) and ethanol or isopropanol. Plasma‐assisted chemical vapor deposition (PA‐CVD) was used with substrate temperatures of 160–170 °C, reactor working pressures of 1.0–1.7 Torr, hydrogen flow rates between 500 and 1200 cc/min, and hydrogen plasma power density ranging from 0.13 to 0.25 W/cm2. The films were subsequently characterized by Rutherford backscattering spectroscopy, cross‐section SEM (scanning electron microscopy), and a four‐point resistivity probe. These studies indicated that the films thus grown were pure, dense, highly uniform, and displayed resistivities of 1.7–1.9 μΩ cm. Films produced on patterned test structures exhibited conformal step coverage and complete hole and via fill. Growth rates over large‐area substrates were around 250 Å/min for via filling.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.At Metal and metallic alloys

Copper diffusion in amorphous thin films of 4% phosphorus‐silcate glass and hydrogenated silicon nitride

D. Gupta, K. Vieregge, and K. V. Srikrishnan

Appl. Phys. Lett. 61, 2178 (1992); http://dx.doi.org/10.1063/1.108287 (3 pages) | Cited 16 times

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We have carried out direct Cu diffusion measurements in amorphous thin films of: (a) 4% phosphorus silicate glass and (b) hydrogenated silicon nitride. Thin films of 0.5 μm thickness were grown onto oxidized Si wafers by a chemical vapor deposition technique. 67Cu radiotracer diffusion techniques combined with microdepth profiling by sputtering with neutralized Ar atoms of 400–500 eV energy have been used. The 67Cu diffusion coefficients in 4% P‐Si glass and in SiN:16 at. % H films in the temperature range of 227–550 °C are described by: (a) 5.3 ×10−11 exp (−0.5 eV/kT) and (b) 4×10−6 exp (−1.1 eV/kT) cm2/s, respectively. To assure reliability, the extent of Cu diffusion should be considered in device design and subsequent processing.
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66.30.J- Diffusion of impurities
68.35.Fx Diffusion; interface formation

Local structure of 1.54‐μm‐luminescence Er3+ implanted in Si

D. L. Adler, D. C. Jacobson, D. J. Eaglesham, M. A. Marcus, J. L. Benton, J. M. Poate, and P. H. Citrin

Appl. Phys. Lett. 61, 2181 (1992); http://dx.doi.org/10.1063/1.108288 (3 pages) | Cited 148 times

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Extended x‐ray absorption fine structure measurements from Er‐implanted Czochralski‐grown Si samples, which exhibit strong luminescence at 1.54 μm, reveal a local sixfold coordination around Er−not of Si−but of oxygen atoms at an average distance of 2.25 Å. By contrast, similar concentrations of Er implanted in high purity float‐zone Si samples, which are essentially optically inactive, show that Er is coordinated to 12 Si atoms at a mean distance of 3.00 Å.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.60.Fi Electroluminescence
71.55.Ht Other nonmetals

Organic–inorganic multilayers: A new concept of optoelectronic material

J. Takada, H. Awaji, M. Koshioka, A. Nakajima, and W. A. Nevin

Appl. Phys. Lett. 61, 2184 (1992); http://dx.doi.org/10.1063/1.108289 (3 pages) | Cited 32 times

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By utilizing copper phthalocyanine (CuPc) and TiOx, we report the fabrication of organic–inorganic heteromultilayer structures as a new concept of optoelectronic material. These are based on an anticipated model where charge carrier photogeneration occurs in the CuPc layers, while the TiOx layers have the role of transportation of electrons in‐plane after charge separation at the interfaces. Atomic force microscopy has confirmed the formation of layered structures for samples with an artificial period of more than 50 Å. The multilayers are found to exhibit 40 times higher photoconductivity than a CuPc single layer.
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73.50.Pz Photoconduction and photovoltaic effects
73.61.-r Electrical properties of specific thin films
78.66.Qn Polymers; organic compounds

On the origin of visible photoluminescence in nanometer‐size Ge crystallites

Yoshihiko Kanemitsu, Hiroshi Uto, Yasuaki Masumoto, and Yoshihito Maeda

Appl. Phys. Lett. 61, 2187 (1992); http://dx.doi.org/10.1063/1.108290 (3 pages) | Cited 156 times

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We have studied the origin of visible photoluminescence of Ge nanocrystals in SiO2 glassy matrix. Spectroscopic analyses of Ge nanocrystals indicate that the room‐temperature photoluminescence comes from Ge nanocrystals of diameter of 4 nm or less. High‐resolution electron microscopic studies imply that the structure of Ge nanocrystals of diameter ≤4 nm differs from the diamond structure. These data suggest that new nanostructure crystalline Ge having a character of direct optical transition exhibits the visible photoluminescence.
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78.55.Hx Other solid inorganic materials
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Ultraviolet stimulated emission and optical gain spectra in CdxZn1−xS‐ZnS strained‐layer superlattices

Yoichi Yamada, Yasuaki Masumoto, John T. Mullins, and Tsunemasa Taguchi

Appl. Phys. Lett. 61, 2190 (1992); http://dx.doi.org/10.1063/1.108291 (3 pages) | Cited 41 times

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Stimulated emission at 374.9 nm has been observed in an optically pumped Cd0.22Zn0.78S‐ZnS strained‐layer superlattice at room temperature. Using a pump‐and‐probe technique with nanosecond excitation pulses, optical gain has also been observed at the tail part of the n=1 heavy‐hole exciton absorption spectrum in the presence of the clear absorption peak of the exciton. Our experimental results suggest that the stimulated emission originates from excitonic gain.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.45.+h Stimulated emission
78.55.Et II-VI semiconductors
42.55.Px Semiconductor lasers; laser diodes

Photoreflectance study of AlAs/GaAs gradient period superlattice

Hongwei Xu, Xiaochuan Zhou, Guichang Xu, Quangang Du, Enge Wang, Dingsheng Wang, Lingjun Zhang, and Chenjia Chen

Appl. Phys. Lett. 61, 2193 (1992); http://dx.doi.org/10.1063/1.108292 (3 pages) | Cited 8 times

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An attempt has been made to explore the possibility of constructing, according to certain design requirements, a graded band‐gap barrier by gradient period (AlAs)n/(GaAs)m superlattice with n and m varying in the range from 1 to 9 monolayers. Photoreflectance spectra show a series of oscillations which are attributed to Franz–Keldysh oscillation induced by quasielectric field in the gradient period superlattice regions. It indicates that a graded band gap is formed in this structure. The slope of the band gap in the graded region determined experimentally from the energy of the extrema of this oscillation is in good agreement with theoretical prediction.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

X‐ray and photoluminescence characterization of low temperature AlInAs grown by molecular beam epitaxy

R. A. Metzger and L. G. McCray

Appl. Phys. Lett. 61, 2196 (1992); http://dx.doi.org/10.1063/1.108293 (3 pages)

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AlInAs lattice matched to InP was grown by molecular beam epitaxy over a temperature range of 150–400 °C and characterized by x‐ray diffraction and photoluminescence. As‐grown samples compared to those annealed at 500 °C showed no shift in the AlInAs x‐ray diffraction peak for growth above 285 °C, indicating no detectable incorporation of excess As in this temperature range. Growth below this temperature saw a linear increase in the shift of the AlInAs diffraction peak due to incorporation of excess As, with samples grown at 150 °C showing a shift of 130 arcsec. Photoluminescence measurements of annealed AlInAs grown above 275 °C exhibited slight increase in PL intensity, while annealed samples grown below 260 °C exhibited large intensity degradation.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Complete strain relief of heteroepitaxial GaAs on silicon

Geoffrey F. Burns and Clifton G. Fonstad

Appl. Phys. Lett. 61, 2199 (1992); http://dx.doi.org/10.1063/1.108490 (3 pages) | Cited 3 times

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High quality strain‐free heteroepitaxial GaAs‐on‐Si has been produced by annealing chemically separated GaAs epitaxial layers grown by molecular beam epitaxy directly on silicon substrates. A process sequence has been developed which retains the GaAs layer in place during chemical separation and post‐processing, thus maintaining a monolithic fabrication sequence. Using low temperature photoluminescence, it is shown that the majority of the residual strain is eliminated by chemical separation. Subsequent rapid thermal annealing is found to remove the remaining strain and significantly improve material quality. The presented process sequence forms the basis for monolithic integration of high quality strain‐free (Al,Ga)As electrical and optical devices with silicon circuitry.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.60.-p Physical properties of thin films, nonelectronic
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
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