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6 Jul 1992

Volume 61, Issue 1, pp. 1-118

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Post‐growth annealing of low temperature‐grown Sb‐doped Si molecular beam epitaxial films

K. D. Hobart, D. J. Godbey, and P. E. Thompson

Appl. Phys. Lett. 61, 76 (1992); http://dx.doi.org/10.1063/1.107618 (3 pages) | Cited 9 times

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Sb‐doped Si films have been grown on (100) Si substrates at low temperature (∼350 °C) by molecular beam epitaxy. Through coevaporation with Sb, very high doping efficiencies were achieved over a carrier concentration range of 1×1017 to 1×1020 cm−3. Through calibration of the beam flux we found that the incorporation of Sb was very near unity up to a concentration of ∼5×1019 cm−3. As‐grown films are of good quality. However, furnace annealing was shown to improve the mobility and completely activate the Sb. Temperature dependent Hall measurements were used to further characterize the films.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.uf Ge and Si

Observation of a new ordered structure in GeSi/Si strained layer superlattice

Peixin Zhong, Youdou Zheng, Rong Zhang, and Liqun Hu

Appl. Phys. Lett. 61, 79 (1992); http://dx.doi.org/10.1063/1.107619 (2 pages) | Cited 1 time

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We report a new kind of ordered structure in the GeSi sublayer of GeSi/Si superlattice. X‐ray diffraction of GeSi/Si superlattice exhibits extraordinary peaks of 1/2(111), 3/2(111), (222) on (111) sample, and (200) on (100) sample. This shows that the germanium and silicon atoms in the GeSi sublayer are ordered due to the strain rather than randomly distributed in bulk GeSi alloy. Two coexisting models of order have been suggested for the (111) sample. The atoms in the ordered structure are aligned as Ge‐Si‐Ge‐Si and Ge‐Si‐Si‐Si along the (111) axis. The relative ratio of the two models has been calculated for the experimental result. The ordered structure may have significant effect on the band structure and optical properties.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.05.C- X-ray diffraction and scattering
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Measurement of Schottky barrier energy on InGaP and InGaAlP films lattice matched to GaAs

A. Nanda, M. J. Hafich, T. J. Vogt, L. M. Woods, G. A. Patrizi, and G. Y. Robinson

Appl. Phys. Lett. 61, 81 (1992); http://dx.doi.org/10.1063/1.107621 (3 pages) | Cited 9 times

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The Schottky barrier energies for both n‐type and p‐type materials have been measured for the wide band‐gap alloys InGaP and InGaAlP when lattice matched to GaAs. A gold metallization was used and the barrier energy was measured on chemically etched surfaces using conventional current‐voltage and photoemission techniques. In the range of alloy composition investigated, the sum of the n‐type and p‐type barriers was found not to equal the value of the energy gap determined from optical measurements. For InxGa1−x−yAlyP lattice matched to GaAs, the n‐type Schottky barrier energy was found to decrease, while the p‐type barrier increased, with increasing Al content y.
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73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Hi Surface barrier, boundary, and point contact devices
73.20.At Surface states, band structure, electron density of states

Investigating the cubic anisotropy of the confined hole subbands of an AlAs/GaAs/AlAs quantum well using resonant magnetotunneling spectroscopy

R. K. Hayden, L. Eaves, M. Henini, T. Takamasu, N. Miura, and U. Ekenberg

Appl. Phys. Lett. 61, 84 (1992); http://dx.doi.org/10.1063/1.108469 (3 pages) | Cited 14 times

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The energy‐wave‐vector dispersion curves and cubic anisotropy of the confined hole subbands of a (001) AlAs/GaAs/AlAs valence‐band quantum well are studied in resonant magnetotunneling experiments using pulsed magnetic fields up to 41 T. The experimental results are compared with calculations using a six‐band model which includes the effect of the finite electric field in the quantum well. The comparison convincingly demonstrates that the technique is sufficiently accurate to measure fine details of the band structure of the valence‐band quantum well.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Annealing effects on heavily carbon‐doped GaAs

W. Y. Han, Y. Lu, H. S. Lee, M. W. Cole, S. N. Schauer, R. P. Moerkirk, K. A. Jones, and L. W. Yang

Appl. Phys. Lett. 61, 87 (1992); http://dx.doi.org/10.1063/1.107622 (3 pages) | Cited 16 times

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The hole concentrations and lattice mismatch with the GaAs substrate of heavily carbon‐doped epilayers (4.7×1019 and 9.8×1019 cm−3) were increased and the mobilities were decreased as compared with the as‐grown samples by rapid thermal annealing silicon nitride capped samples at temperatures from 500 to 900 °C. However, for the more heavily doped sample, the hole concentration, mobility, and lattice mismatch decreased with increasing annealing temperature for annealing temperatures higher than 700 °C, but the hole concentration and lattice mismatch were still larger than those of the as‐grown samples. Secondary ion mass spectroscopy results showed that annealing produced no change in the C concentration or distribution, but the hydrogen concentration decreased. Cross‐sectional transmission electron microscopy indicated that no mismatch dislocations formed at the interface.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.U- Doping and impurity implantation
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Effect of silicon source gas on silicon‐germanium chemical vapor deposition kinetics at atmospheric pressure

T. I. Kamins and D. J. Meyer

Appl. Phys. Lett. 61, 90 (1992); http://dx.doi.org/10.1063/1.107623 (3 pages) | Cited 10 times

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Epitaxial Si1−xGex alloy layers have been deposited in an atmospheric‐pressure, chemical‐vapor‐deposition reactor using dichlorosilane, silane, and disilane, along with germane. The deposition rate increases and the Ge content decreases with increasing reactivity of the silicon‐containing gas. The rate increases monotonically with increasing Ge content in the layer for all three gases, in contrast to the behavior seen in systems operating at substantially lower total deposition pressures, suggesting that the differences in previously reported behavior are dominated by the different operating‐pressure regimes, rather than the different silicon source gases.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Synchrotron radiation‐assisted silicon homoepitaxy at 100 °C using Si2H6/H2 mixture

Yasuo Nara, Yoshihiro Sugita, Kei Horiuchi, and Takashi Ito

Appl. Phys. Lett. 61, 93 (1992); http://dx.doi.org/10.1063/1.107624 (3 pages) | Cited 3 times

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Epitaxial silicon film is deposited on a Si(100) substrate by synchrotron radiation irradiation. Reflection high‐energy electron diffraction and high‐resolution transmittance electron microscopy observation reveal that epitaxial growth can be realized at temperatures as low as 100 °C. At substrate temperatures above 300 °C, the films show a clear 2×1 reconstructed surface, indicating a fairly good crystal quality. Below 500 °C, the growth rate increases as the substrate temperature is lowered, meaning that the surface adsorption of source gas and/or photogenerated radicals plays an important role in the epitaxial growth reaction.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.50.-m Photochemistry

Low threshold current InGaAs/GaAs/GaInP lasers grown by gas‐source molecular beam epitaxy

G. Zhang, J. Näppi, K. Vänttinen, H. Asonen, and M. Pessa

Appl. Phys. Lett. 61, 96 (1992); http://dx.doi.org/10.1063/1.107625 (3 pages) | Cited 15 times

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Strained‐layer InGaAs/GaAs/GaInP separate confinement heterostructure single‐quantum well lasers have been fabricated using gas‐source molecular beam epitaxy. A threshold current density as low as 72 A/cm2 was achieved for a broad‐area, uncoated Fabry–Perot laser with a cavity length of 1200 μm. The internal quantum efficiency and internal waveguide loss were 91% and 8.8 cm−1, respectively. A high characteristic temperature, 140 K, was obtained.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Surfactant mediated epitaxial growth of InxGa1−xAs on GaAs (001)

J. Massies, N. Grandjean, and V. H. Etgens

Appl. Phys. Lett. 61, 99 (1992); http://dx.doi.org/10.1063/1.107626 (3 pages) | Cited 38 times

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It is shown that Te can be used as a surfactant for the growth of highly strained InxGa1−xAs on GaAs(001). As observed by reflection high‐energy electron diffraction analysis during growth, adsorption of Te on the GaAs surface prior to the growth of InxGa1−xAs drastically increases the layer thickness which can be grown in a two‐dimensional layer‐by‐layer fashion. In analogy with the behavior of As and Sb as surfactant in the growth of Si/Ge [Copel, Reuter, Kaxiras, and Tromp, Phys. Rev. Lett. 63, 632 (1989)] Te is only slightly incorporated in the growing layer and floats at the surface.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Md Surface thermodynamics, surface energies
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Nonuniformities of native oxides on Si(001) surfaces formed during wet chemical cleaning

T. Aoyama, T. Yamazaki, and T. Ito

Appl. Phys. Lett. 61, 102 (1992); http://dx.doi.org/10.1063/1.107653 (3 pages) | Cited 11 times

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We studied the uniformity of native oxide formed on Si(001) surfaces during wet chemical cleaning. Uniformity was determined by surface morphology at the initial stage of photoexcited fluorine etching. Since photoexcited fluorine etches Si 40 times faster than it etches Si oxide, it highlights Si native oxides on a Si surface making them observable by scanning tunneling microscopy or atomic force microscopy. Boiling in a HCl‐H2O2‐H2O (1:1:4) solution formed 30–70‐nm islands of oxides. The regions between the islands were not oxidized. Boiling in NH4OH‐H2O2‐H2O (1:1.4:4) also formed oxide islands 30–70 nm in diameter, but the interisland regions were slightly oxidized. Boiling in a HNO3 solution resulted in a native oxide with pinholes at a density of 5×109 cm−2
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81.65.-b Surface treatments

Regrowth of a thin InP surface covering layer in the Au/InP system during annealing

B. Pécz, G. Radnóczi, P. B. Barna, and Éva Zsoldos

Appl. Phys. Lett. 61, 105 (1992); http://dx.doi.org/10.1063/1.107654 (3 pages) | Cited 3 times

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Au(100 nm)/InP(111) samples were annealed at 500 °C in a forming gas for 10 min. Au9In4 and AuIn2 phases formed during the heat treatment. Besides the formation of Au‐In phases, a thin (about 20 nm thick), polycrystalline, continuous InP layer was observed on the top of the sample.
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81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations

Visible light emission from a porous silicon/solution diode

P. M. M. C. Bressers, J. W. J. Knapen, E. A. Meulenkamp, and J. J. Kelly

Appl. Phys. Lett. 61, 108 (1992); http://dx.doi.org/10.1063/1.108470 (3 pages) | Cited 54 times

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Reduction of S2O82− ions at the interface between an n‐type porous Si electrode and an aqueous solution gives rise to electroluminescence showing evidence of quantization effects. A broad emission band with a maximum at 670 nm is observed similar to the photoluminescence spectrum of the same layers. The results suggest that holes are ‘‘injected’’ into the valence band of the porous semiconductor from an intermediate of the reduction reaction, the SO4−⋅ radical ion. The resulting electron‐hole recombination is responsible for the visible light emission.
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78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
82.45.-h Electrochemistry and electrophoresis

Etching of screw dislocations in YBa2Cu3O7 films with a scanning tunneling microscope

I. Heyvaert, E. Osquiguil, C. Van Haesendonck, and Y. Bruynseraede

Appl. Phys. Lett. 61, 111 (1992); http://dx.doi.org/10.1063/1.107656 (3 pages) | Cited 21 times

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We report on the systematic unrolling of screw dislocations with the scanning tunneling microscope at the surfaces of sputtered, c‐axis oriented YBa2Cu3O7 films. The etching is dominated by field induced evaporation and not by mechanical milling of the surface. The process also enables the controlled drawing of nanometer scale grooves on the film surface.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
74.70.-b Superconducting materials other than cuprates
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments

Mn substitution effect on magnetostriction temperature dependence in Tb0.3Dy0.7Fe2

T. Funayama, T. Kobayashi, I. Sakai, and M. Sahashi

Appl. Phys. Lett. 61, 114 (1992); http://dx.doi.org/10.1063/1.107657 (2 pages) | Cited 26 times

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Magnetostriction temperature dependencies in Tb0.3Dy0.7 (Fe1−xMnx)2 were investigated. Mn substitution lowers the spin reorientation temperature, at which magnetostriction shows a sharp drop. Moreover, Mn containing compounds show larger magnetostriction than that for a Mn‐free compound at low temperature. Mössbauer measurements show that easy magnetization direction for the Mn containing compound is in the 〈111〉 direction at 300 K, while it is in the 〈100〉 at 77 K. These results indicate that the tetragonal distortion λ100 increases by Mn addition in Tb0.3Dy0.7Fe2.
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75.80.+q Magnetomechanical effects, magnetostriction
75.50.Bb Fe and its alloys

Photoelectric properties in microscopic p‐n junctions of organic semiconductors

Kazuhiro Saito and Michio Sugi

Appl. Phys. Lett. 61, 116 (1992); http://dx.doi.org/10.1063/1.107658 (3 pages) | Cited 1 time

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Photodiodes containing microscopic p‐n junctions of organic dyes were fabricated using the Langmuir–Blodgett technique. Their action as p‐n junctions was confirmed by measurement of transient photoinduced voltage responses to impulsive laser light irradiation. The signal is characterized by a rapid rise followed by a slow decay, which are assignable to the photoinduced electron transfer from n‐type dye to p‐type dye and the reverse transfer through the junction, respectively. The decay process shows a long‐time tail and cannot be described by a single exponential function.
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73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.50.Pz Photoconduction and photovoltaic effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
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