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13 Jul 1992

Volume 61, Issue 2, pp. 121-239

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Near‐infrared optical parametric oscillation in a N‐(4‐nitrophenyl)‐L‐prolinol molecular crystal

D. Josse, S. X. Dou, J. Zyss, P. Andreazza, and A. Périgaud

Appl. Phys. Lett. 61, 121 (1992); http://dx.doi.org/10.1063/1.108247 (3 pages) | Cited 13 times

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Optical parametric oscillation has been achieved in a 1.9‐mm‐thick organic nonlinear optical crystal of NPP [N‐(4‐nitrophenyl)‐L‐prolinol]. Tunability from 0.9 to 1.7 μm is obtained for the first time in an organic crystal with a maximum total conversion efficiency of about 5%. Considerable possibilities for further optimization are available.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Jk Polymers and organics
42.79.Nv Optical frequency converters

Dielectric function of solid C70 films

Song‐Lin Ren, Kai An Wang, Ping Zhou, Ying Wang, A. M. Rao, M. S. Meier, J. P. Selegue, and P. C. Eklund

Appl. Phys. Lett. 61, 124 (1992); http://dx.doi.org/10.1063/1.108248 (3 pages) | Cited 40 times

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Using variable‐angle ellipsometry and normal incidence reflection/transmission optical techniques we have measured the dielectric function ϵ(ω) at room temperature for solid C70 films over the photon energy range 0.5≤E≤5.3 eV. The onset of absorption across the highest‐occupied‐molecular‐orbit (HOMO)–lowest‐unoccupied‐molecular‐orbit (LUMO) gap is measured to be 1.25 eV. Furthermore, structure in the interband absorption at 2.41, 3.10, 3.50, and 4.45 eV is observed. The refractive index at zero frequency is estimated to be n(0)=1.94 as compared to the value n(0)=1.90, which we obtained for solid C60 from our previous study.
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78.66.-w Optical properties of specific thin films
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.40.Ha Other nonmetallic inorganics
77.22.Gm Dielectric loss and relaxation

On the theory of frequency chirped pulse coherent amplification in inhomogeneously broadened gain medium

E. M. Belenov, P. G. Kryukov, and A. V. Nazarkin

Appl. Phys. Lett. 61, 127 (1992); http://dx.doi.org/10.1063/1.108250 (3 pages)

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Frequency chirped pulse interaction with inhomogeneously broadened two‐level active medium when the pulse width is shorter than the homogeneous relaxation time T2 (coherent interaction) is studied theoretically. It is shown that, unlike the case of incoherent interaction when only half an energy stored can be converted into field, in the nonlinear coherent regime full extraction of active medium energy is possible. The analogy of the effect with Landau–Zener transition between crossing molecular curves is pointed out. Giving high‐energy output at relatively low peak intensities, this nonlinear mechanism of energy extraction can be useful for excimer lasers.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
33.80.-b Photon interactions with molecules

Investigations of laser array for parallel optical data link applications

N. K. Dutta, S. J. Wang, J. D. Wynn, J. Lopata, and R. A. Logan

Appl. Phys. Lett. 61, 130 (1992); http://dx.doi.org/10.1063/1.108251 (3 pages) | Cited 8 times

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Very low threshold (Ith∼1 mA) lasers emitting near 1.3 μm have been fabricated using multiquantum‐well active region, short cavity length, and high reflectivity facet coatings. A laser‐array transmitter utilizing these lasers can be operated without prebias and has negligible timing skew for 1 Gb/s operation. No crosstalk is observed when adjacent elements of the laser array are modulated.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.82.Et Waveguides, couplers, and arrays
42.81.Qb Fiber waveguides, couplers, and arrays

Frequency stability in ultrahigh frequency mode locking of quantum‐well lasers at ≳60 GHz

K. Y. Lau, I. Kim, and J. Paslaski

Appl. Phys. Lett. 61, 133 (1992); http://dx.doi.org/10.1063/1.108252 (3 pages) | Cited 3 times

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This letter presents experimental and theoretical results which show that megahertz frequency stability can be obtained in ultrahigh frequency mode‐locked monolithic quantum‐well lasers at ≳60 GHz. It is shown that the fundamental limit in the frequency stability is caused by simultaneous excitation of mode‐locked ‘‘supermodes’’ by spontaneous emission.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Planar waveguide, 1 kW cw, carbon dioxide laser excited by a single transverse rf discharge

A. D. Colley, H. J. Baker, and D. R. Hall

Appl. Phys. Lett. 61, 136 (1992); http://dx.doi.org/10.1063/1.108488 (3 pages) | Cited 24 times

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A transverse radio frequency discharge excited, carbon dioxide slab laser has been operated cw with a hybrid waveguide / confocal unstable resonator to produce an output power of 1.06 kW at 12% efficiency. The active volume of 770×95×2 mm3 consists of a single discharge section with one cable feed.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.-v Laser optical systems: design and operation

Visible electroluminescent subwavelength point source of light

Nily Kuck, Klony Lieberman, Aaron Lewis, and Aron Vecht

Appl. Phys. Lett. 61, 139 (1992); http://dx.doi.org/10.1063/1.108224 (3 pages) | Cited 13 times

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A structure has been devised to generate a visible point source of electroluminescently produced light with subwavelength dimensions. This submicron (0.3 μm) spot of light is created by the combination of a standard dc electroluminescent powder, ZnS:MnCu, that is introduced into the tip of a glass micropipette coated with a transparent coating of conducting indium oxide as the anode and an appropriate electrode placed inside the pipette as the cathode.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
42.72.-g Optical sources and standards

Near‐field magneto‐optics and high density data storage

E. Betzig, J. K. Trautman, R. Wolfe, E. M. Gyorgy, P. L. Finn, M. H. Kryder, and C.‐H. Chang

Appl. Phys. Lett. 61, 142 (1992); http://dx.doi.org/10.1063/1.108198 (3 pages) | Cited 324 times

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Near‐field scanning optical microscopy (NSOM) has been used to image and record domains in thin‐film magneto‐optic (MO) materials. In the imaging mode, resolution of 30–50 nm has been consistently obtained, whereas in the recording mode, domains down to ∼60 nm have been written reproducibly. Data densities of ∼45 Gbits/in.2 have been achieved, well in excess of current magnetic or MO technologies. A brief analysis of speed and other issues indicates that the technique may represent a viable alternative to these and other methods for anticipated high density data storage needs.
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85.70.Sq Magnetooptical devices
75.70.Kw Domain structure (including magnetic bubbles and vortices)

New method for determining the nonlinear optical coefficients of thin films

Y. Hase, K. Kumata, S. S. Kano, M. Ohashi, T. Kondo, R. Ito, and Y. Shiraki

Appl. Phys. Lett. 61, 145 (1992); http://dx.doi.org/10.1063/1.108199 (2 pages) | Cited 9 times

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A new scheme for characterizing the quadratic optical nonlinearity of thin films grown on opaque substrates is proposed and demonstrated. This involved the measurement, as a function of the film thickness, of second‐harmonic waves reflected from a film surface. The d36 coefficient of a ZnSe‐on‐GaAs film is estimated by this method to be 33±7 pm/V at the fundamental wavelength of 1.06 μm, which agrees reasonably well with the known value for the bulk crystal.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Ultrafast all‐optical switching in semiconductor nonlinear directional couplers at half the band gap

A. Villeneuve, C. C. Yang, P. G. J. Wigley, G. I. Stegeman, J. S. Aitchison, and C. N. Ironside

Appl. Phys. Lett. 61, 147 (1992); http://dx.doi.org/10.1063/1.108200 (3 pages) | Cited 49 times

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Efficient ultrafast all‐optical switching in nonlinear directional couplers made of AlGaAs and AlGaAs/GaAs quantum wells near half the band gap is reported. The switching is limited by multiphoton absorption which is dominated by three‐photon absorption in this spectral range. The three‐photon absorption in the quantum well nonlinear directional coupler is stronger than that of bulk AlGaAs. Autocorrelations of the output pulses in the bar and cross states confirm pulse breakup through nonlinear coupling, and illustrate the effects of multiphoton absorption. All sets of experimental data are fitted well by a theoretical model.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Gn Optical waveguides and couplers

Four‐port guided‐wave nonsymmetric Mach–Zehnder interferometer

W. J. Wang, S. Honkanen, S. I. Najafi, and A. Tervonen

Appl. Phys. Lett. 61, 150 (1992); http://dx.doi.org/10.1063/1.108201 (3 pages) | Cited 3 times

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A four‐port guided‐wave nonsymmetric Mach–Zehnder interferometer based on two hybrid optical couplers is proposed. A potential application of the device is a 0.98 μm/1.55 μm wavelength multiplexer in connection with an optical ring resonator. The proposed device is designed by using the effective indices of the guided modes in a silver ion‐exchanged waveguide. The device is fabricated in glass substrate by a two‐step ion‐exchange process, and it is characterized using a continuous source as well as lasers at λ=1.06, 1.3, and 1.523 μm.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers

Optical probing of pulsed, focused ultrasonic fields using a heterodyne interferometer

D. Royer, N. Dubois, and M. Fink

Appl. Phys. Lett. 61, 153 (1992); http://dx.doi.org/10.1063/1.108202 (3 pages) | Cited 11 times

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The pulsed acoustic field of a piezoelectric focused transducer transmitted in water has been investigated by using an optical heterodyne interferometer. The probe beam is reflected by a thin membrane that follows the motion of the fluid particle. Absolute measurements of the mechanical displacement have been performed in the frequency range 5–15 MHz with a spatial resolution better than 0.1 mm and a sensitivity of 0.1 nm with a 20 MHz detection bandwidth that corresponds to a minimum detectable acoustic energy density of 2 μJ/m2. The experimental results all agree quantitatively with diffraction theory predictions of impulse response at the focus of the transducer.
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43.35.Yb Ultrasonic instrumentation and measurement techniques
43.58.+z Acoustical measurements and instrumentation

Influence of a thin adhesion layer on the damping of surface acoustic waves

U. Teubner, R. Dahint, M. v. Schickfus, and S. Hunklinger

Appl. Phys. Lett. 61, 156 (1992); http://dx.doi.org/10.1063/1.108203 (3 pages) | Cited 1 time

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The attenuation of surface acoustic waves (SAWs) on YZ‐LiNbO3 crystals, coated with an aluminum layer of several hundred angstroms, has been measured as a function of temperature in the range from 0.3 K to room temperature. A peak in attenuation was found between 50 and 250 K dependent on layer thickness and SAW frequency. Addition of an adhesion layer with a thickness of about 15 Å, placed between substrate material and metal coating, drastically lowers the attenuation at higher temperatures. In this case, the attenuation rises slowly with temperature and no peak occurs.
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43.35.Pt Surface waves in solids and liquids
43.20.Hq Velocity and attenuation of acoustic waves
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants

Novel seeding method for the growth of polycrystalline Si films with hemispherical grains

Akira Sakai and Toru Tatsumi

Appl. Phys. Lett. 61, 159 (1992); http://dx.doi.org/10.1063/1.108204 (3 pages) | Cited 11 times

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A novel method for the fabrication of hemispherical‐grained polycrystalline Si (HSG‐Si) films, which is applicable to high capacitance storage electrodes for dynamic random access memory (DRAM) cells, has been developed. This technique consists of first seeding a clean amorphous‐Si (a‐Si) surface with crystalline Si nuclei at an elevated substrate temperature using Si molecular‐beam deposition. Upon subsequent isothermal annealing under ultrahigh vacuum conditions, it was found that the Si microcrystals act as nuclei for the formation of HSG‐Si. Precise control of the grain size distribution of the HSG‐Si structure was successfully demonstrated, which is key to the possible application of this material to the next generation of DRAM devices.
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68.55.-a Thin film structure and morphology
81.15.Np Solid phase epitaxy; growth from solid phases
61.72.Mm Grain and twin boundaries

Enhanced surface cation mobility on Sn delta‐doped (Ga,Al)As

G. S. Petrich, A. M. Dabiran, and P. I. Cohen

Appl. Phys. Lett. 61, 162 (1992); http://dx.doi.org/10.1063/1.108205 (3 pages) | Cited 7 times

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During the growth of GaAs and AlAs on vicinal GaAs(100) by molecular‐beam epitaxy, reflection high energy electron diffraction was used to measure the transition temperature between two‐dimensional nucleation and pure step propagation when submonolayer amounts of Sn were present on the surface. On samples misoriented by 0.5° to either the [011] or the [011] direction, the transition temperature decreased by approximately 100 °C after the deposition of 0.6 monolayers of Sn, indicating that the Ga mobility increased. The presence of Sn also increased the surface mobility of the Al adatoms on AlAs(100) surfaces as indicated by the annealing behavior of the AlAs surface at 600 °C.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.U- Doping and impurity implantation

Dopant‐induced disordering of annealed AlGaAs heterostructures

C. L. Reynolds and M. Geva

Appl. Phys. Lett. 61, 165 (1992); http://dx.doi.org/10.1063/1.108206 (3 pages) | Cited 12 times

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Impurity‐induced layer disordering, i.e., outdiffusion of dopant and matrix elements, has been observed in superlattices and quantum wells. In this letter, we report on disordering in AlGaAs heterostructures in which only the central region of 650‐Å‐thick AlGaAs layers is Si doped. Disordering is clearly shown to be dependent on Si concentration and outdiffusion.
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66.30.J- Diffusion of impurities
66.30.Ny Chemical interdiffusion; diffusion barriers
68.60.Dv Thermal stability; thermal effects
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Scanning probe microscopy of thermal conductivity and subsurface properties

M. Nonnenmacher and H. K. Wickramasinghe

Appl. Phys. Lett. 61, 168 (1992); http://dx.doi.org/10.1063/1.108207 (3 pages) | Cited 51 times

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The past six years has seen a tremendous growth in scanned probe microscopies of various sorts. In this letter, we add a new capability to this family−mapping of thermal conductivity variations on a nanometer scale. We show how our new probe technique can be used to measure thermal conductivity of conductors and thin insulating films deposited on top of conductors. Our results also demonstrate for the first time, the capability of the technique to image subsurface details of samples. As the thermal conductivities of different materials can vary by over three orders of magnitude, we suggest this as an important new contrast mechanism for studying materials on the nanometer scale.
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73.25.+i Surface conductivity and carrier phenomena
73.50.-h Electronic transport phenomena in thin films
07.20.-n Thermal instruments and apparatus

Filtered arc deposition of amorphous diamond

Richard Lossy, David L. Pappas, Ronnen A. Roy, Jerome J. Cuomo, and Vivek M. Sura

Appl. Phys. Lett. 61, 171 (1992); http://dx.doi.org/10.1063/1.108208 (3 pages) | Cited 86 times

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A cathodic arc with beam filter is employed for the deposition of hydrogen‐free amorphous carbon films. A linear filter is used to prevent macroparticles and nonionized carbon atoms from reaching the substrate. The deposited films are characterized by their optical and mechanical behavior. Depending on the deposition conditions, optical band gaps in the range 2.1–2.4 eV are measured. Mechanical properties are investigated using the nanoindentation method and are shown to approach those of natural diamond. To our knowledge, the data obtained thus far reveal these films to be more diamondlike than those prepared using any other method for the deposition of nonhydrogenated amorphous diamond.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
78.66.-w Optical properties of specific thin films
62.20.D- Elasticity

In situ study of relaxation of SiGe thin films by the modified Frank–Read mechanism

F. K. LeGoues, J. A. Ott, K. Eberl, and S. S. Iyer

Appl. Phys. Lett. 61, 174 (1992); http://dx.doi.org/10.1063/1.108209 (3 pages) | Cited 12 times

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We have studied the dynamics of thermal relaxation of highly metastable films of SiGe/Si(100) in situ in the transmission electron microscope (TEM). This makes it possible to study the early stages of strain relaxation, and thus obtain information about the nucleation of dislocations. We find that, when care is taken not to introduce artifacts during sample preparation, relaxation occurs by the multiplication of ‘‘precursor dislocations’’ through a mechanism similar to the Frank–Read mechanism. An individual nucleation site is observed, confirming the model previously proposed.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Formation of two‐dimensional arsenic‐precipitate arrays in GaAs

M. R. Melloch, N. Otsuka, K. Mahalingam, C. L. Chang, P. D. Kirchner, J. M. Woodall, and A. C. Warren

Appl. Phys. Lett. 61, 177 (1992); http://dx.doi.org/10.1063/1.108210 (3 pages) | Cited 41 times

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GaAs epilayers were grown by molecular beam epitaxy under normal conditions, except a substrate temperature of 250 °C was used instead of the normal 600 °C. This results in an excess of arsenic of about 1.5% in the epilayer. The epilayers also contained regions that were delta doped with silicon, beryllium, and indium. Samples were annealed for 30 s at 600, 700, and 800 °C to investigate the effects of the Si, Be, and In impurities on the precipitation of the excess As. It was found that the As precipitates form preferentially on planes of Si while forming preferentially between planes of Be. The isoelectronic impurity In appeared to have no effect on the precipitation process.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
61.72.U- Doping and impurity implantation
61.72.Bb Theories and models of crystal defects

Comparison of triethylgallium and tri‐isobutylgallium for growth of GaAs and AlGaAs by metalorganic molecular beam epitaxy

C. R. Abernathy, P. W. Wisk, A. C. Jones, and S. A. Rushworth

Appl. Phys. Lett. 61, 180 (1992); http://dx.doi.org/10.1063/1.108211 (3 pages) | Cited 15 times

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We have investigated the use of tri‐isobutylgallium (TIBG) as an alternative to the standard source, triethylgallium (TEG), for growth of GaAs and AlGaAs by metalorganic molecular beam epitaxy (MOMBE). With this source we have obtained specular morphologies and growth rates up to 83 Å/min and 92 Å/min for GaAs and AlGaAs, respectively. At low temperatures, <450 °C, both GaAs and AlGaAs show much less carbon when grown with TIBG rather than TEG. At 525 °C, carbon levels in GaAs are similar regardless of Ga source. However, by optimizing the V/III ratio, the carbon background in Al0.25Ga0.75As can be reduced to 3×1015 cm−3 with TIBG relative to the 2×1016 cm−3 normally obtained with TEG at this temperature. Furthermore, the use of TIBG reduces the oxygen background by roughly a factor of 2. Based on these results, we conclude that the oxygen background in MOMBE is no longer limited by oxygen contamination in the gaseous precursors.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Heavy carbon doping of GaAs grown by solid‐source molecular‐beam epitaxy

C. Giannini, A. Fischer, C. Lange, K. Ploog, and L. Tapfer

Appl. Phys. Lett. 61, 183 (1992); http://dx.doi.org/10.1063/1.108212 (3 pages) | Cited 25 times

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We study the incorporation of carbon in GaAs at doping levels beyond 1019 cm−3 grown by conventional solid‐source molecular‐beam epitaxy. The correlation of Hall effect measurements at 77 and 300 K and of double crystal x‐ray diffractometry allows us to determine the fraction of carbon incorporated on As sites acting as acceptors. These experiments reveal the onset of compensation at the highest doping levels of 5×1019 cm−3.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.U- Doping and impurity implantation
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Quantum efficiencies greater than unity: A computer study of a photogating effect in amorphous silicon p‐i‐n devices

J. Y. Hou and S. J. Fonash

Appl. Phys. Lett. 61, 186 (1992); http://dx.doi.org/10.1063/1.108213 (3 pages) | Cited 11 times

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We report a new effect, which we call photogating, that can be present in amorphous Si‐based p‐i‐n structures under certain illumination conditions. This phenomenon feeds photogenerated carriers created by a bias light beam of one wavelength into the current response to a second probe light beam of a different wavelength. We demonstrate that this phenomena can lead to measured quantum efficiencies greater than unity. Our computer simulations show that this new effect owes its origins to trapped charge and to the condition that there is a low field region in the front of the structure in the presence of certain bias light.
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85.30.De Semiconductor-device characterization, design, and modeling
85.60.Dw Photodiodes; phototransistors; photoresistors
73.50.Pz Photoconduction and photovoltaic effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

InGaAs/InP hot electron transistors grown by chemical beam epitaxy

W. L. Chen, J. P. Sun, G. I. Haddad, M. E. Sherwin, G. O. Munns, J. R. East, and R. K. Mains

Appl. Phys. Lett. 61, 189 (1992); http://dx.doi.org/10.1063/1.108214 (3 pages) | Cited 3 times

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In this letter, we report on the dc performance of chemical beam epitaxy grown InGaAs/InP hot electron transistors (HETs). The highest observed differential β (dIC/dIB) is over 100. The HETs have Pd/Ge/Ti/Al shallow ohmic base contacts with diffusion lengths less than 300 Å. Furthermore, we also demonstrated ballistic transport of electrons in an InGaAs/InP HET by obtaining an energy distribution of electrons with ∼60 meV full width at half maximum. The measured conduction band discontinuity of InGaAs/InP is 250.3 meV, which is 39.8% of the band gap difference.
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85.30.Pq Bipolar transistors
73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Observation of strong Si/Si1−xGex narrow quantum‐well near‐edge luminescence under applied hydrostatic pressure

G. A. Northrop, J. F. Morar, D. J. Wolford, and J. A. Bradley

Appl. Phys. Lett. 61, 192 (1992); http://dx.doi.org/10.1063/1.108215 (3 pages) | Cited 11 times

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We report the first measurements of band‐gap energy versus applied hydrostatic pressure in the Si1−xGex system, a result achievable only with the recent availability of high‐quality alloys. The Si/Si1−xGex (x=0.05–0.25) quantum wells used here were prepared by molecular beam epitaxy, and produced relatively intense photoluminescence (PL). Indeed, this PL emission from just two 25‐Å‐thick quantum wells was found to be comparable to that from high‐optical quality, ultrahigh‐purity bulk Si. A clear no‐phonon emission line is found in the low‐temperature (6 K) PL which displays a strictly linear PL energy dependence with pressure. The alloy and Si pressure dependencies (−1.50 and −1.52 meV/kbar) were found to be virtually identical thus proving the luminescence is from a ‘‘shallow’’ electronic state and associated with the X band gap of the pseudomorphically strained alloy.
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78.66.-w Optical properties of specific thin films
78.55.Hx Other solid inorganic materials
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
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