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16 Nov 1992

Volume 61, Issue 20, pp. 2381-2485

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Tunable blue light source by intracavity frequency doubling of a Cr‐doped LiSrAlF6 laser

François Balembois, Patrick Georges, François Salin, Gérard Roger, and Alain Brun

Appl. Phys. Lett. 61, 2381 (1992); http://dx.doi.org/10.1063/1.108196 (2 pages) | Cited 3 times

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A Cr3+:LiSrAlF6 laser in Q‐switched operation at 10 kHz was intracavity frequency doubled by using a LiIO3 crystal. The 230 ns tunable blue pulses were obtained in the 395–435 nm range with up to 7 mW average power at 407 nm.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Nv Optical frequency converters
42.55.Rz Doped-insulator lasers and other solid state lasers

Nonequilibrium effects in quantum well lasers

N. Tessler, R. Nagar, G. Eisenstein, S. Chandrasekhar, C. H. Joyner, A. G. Dentai, U. Koren, and G. Raybon

Appl. Phys. Lett. 61, 2383 (1992); http://dx.doi.org/10.1063/1.108197 (3 pages) | Cited 14 times

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We present a simple technique of measuring the effect of the finite capture time of carriers in quantum well lasers on the homogeneity of the gain. The effect is measured using an extended cavity laser configuration in which we control the feedback level and compare the two extreme cases of a laser and a nonlasing amplifying gain medium. Broadband measurements of the spontaneous emission at energies near the top of the well and above the barriers show an inhomogeneous gain saturation which depends on the photon density inside the cavity. The results agree with a simple model for carrier injection in quantum well lasers.
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42.55.Px Semiconductor lasers; laser diodes
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Laser action from Mn5+ in Ba3(VO4)2

Larry D. Merkle, Albert Pinto, Horacio R. Verdún, and Bruce McIntosh

Appl. Phys. Lett. 61, 2386 (1992); http://dx.doi.org/10.1063/1.108172 (3 pages) | Cited 38 times

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We report the first observation, to our knowledge, of three‐level laser oscillator operation in a crystal activated with Mn5+. The material is Mn:Ba3(VO4)2 which exhibited laser oscillation at room temperature under pulsed 592 nm excitation. The laser emission occurs at 1181 nm with a threshold of 0.3 J/cm2. Spectroscopy indicates that this material operates as a three‐level system on the 1E to 3A2 transition of the Mn5+ ion with tetrahedral coordination. The strong, broad absorption bands and 0.43 ms room‐temperature lifetime make this system very promising for flash lamp AlxGa1−xAs diode pumping.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.70.Hj Laser materials
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics

Single mode broad area distributed Bragg reflector ring oscillators

Kenneth M. Dzurko, Donald R. Scifres, Amos Hardy, David F. Welch, and R. G. Waarts

Appl. Phys. Lett. 61, 2389 (1992); http://dx.doi.org/10.1063/1.108173 (3 pages) | Cited 1 time

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A large aperture, spatially coherent, single frequency semiconductor ring laser is demonstrated for the first time. Two diffraction gratings oriented orthogonally to each other are used to uniquely select a single broad area mode which oscillates at a single wavelength. Spatial coherence across a 411 μm output aperture is observed, giving a diffraction limited output beam measuring 0.2°×0.135°. The surface emitting ring oscillators contain strained InGaAs/GaAs quantum well active regions and operate at 1012 nm to pulsed output powers exceeding 500 mW with threshold current densities under 300 A/cm2.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Study of the pretilt angle for 5CB on rubbed polyimide films containing trifluoromethyl moiety and analysis of the surface atomic concentration of F/C(%) with an electron spectroscope for chemical analysis

Dae‐Shik Seo, Shunsuke Kobayashi, and Michinori Nishikawa

Appl. Phys. Lett. 61, 2392 (1992); http://dx.doi.org/10.1063/1.108174 (3 pages) | Cited 110 times

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We have investigated the generation of the pretilt angles for nematic liquid crystal (5CB) aligned in the cells using rubbed polyimide (PI) films containing trifluoromethyl moieties as a function of rubbing strength (RS). In order to characterize the films, we have conducted an analysis of the surface atomic concentration of fluorine (F) relative to that of carbon (C), F/C(%) with an electron spectroscopy for chemical analysis (ESCA) in the shallow surface region at the depth of 3 and 12 nm. It is shown that the F/C ratio at a depth of 3 nm decreases with RS, and that the observed pretilt angle shows a high value approaching 45° in the weak RS region, and tends to decrease with increasing RS. The existence of the trifluoromethyl moiety in the special PI, and its appearance in the surface region are considered to be responsible for the generation of high pretilt angles at low RS region since a surface covered by fluorine atoms has a low surface energy and the van der Waals dispersion force is thought to be dominant and hence perpendicular LC alignment is expected. With increasing RS the surface concentration of fluorine atoms decreases and repeated triangles will be formed; a combination of the dispersion force and steric interaction between LC molecules and these structures may cause a medium or low pretilted LC conformation.
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61.30.-v Liquid crystals
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces

Vibration detection using dynamic photorefractive gratings in KTN/KLTN crystals

Rudolf Hofmeister and Amnon Yariv

Appl. Phys. Lett. 61, 2395 (1992); http://dx.doi.org/10.1063/1.108175 (3 pages) | Cited 5 times

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We demonstrate a sensitive, all‐optical, self‐aligning holographic microphone/vibration sensor utilizing the zero external electric field photorefractive (Zefpr) effect. The device relies on the unique phase relationship, ϕ=0, between a spatially periodic intensity standing wave and the resultant index grating created with the Zefpr effect. Under this zero phase condition, the transmitted intensity of interfering beams in a two beam coupling geometry varies linearly with displacement of either the index grating or one of the interfering beams. In this way, vibrations are sensed remotely without any electrical signals in the vicinity of the sensor. The sensitivity of the microphone was determined as a noise equivalent power of 15 dB sound pressure level relative to 0.0002 μbar across the range 1.6–15.5 kHz.
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43.20.Ye Measurement methods and instrumentation
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.40.-i Holography

Estimation of carrier capture time of quantum‐well lasers by spontaneous emission spectra

Hideki Hirayama, Junji Yoshida, Yasunari Miyake, and Masahiro Asada

Appl. Phys. Lett. 61, 2398 (1992); http://dx.doi.org/10.1063/1.108176 (3 pages) | Cited 24 times

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Carrier capture time was estimated for separate confinement heterostructure single quantum‐well lasers by measuring the spontaneous emission from the optical confinement layers which increases with current even above the laser threshold due to finite carrier capture time of the well. By fitting theoretical analysis to the measurement, hole capture time was found to be the dominant factor for the spontaneous emission increase, and was estimated as 0.2–0.25 ps for GaInAs/GaInAsP/InP quantum well lasers. Additional transport time of 0.1–0.2 ps across the barrier was also obtained for multiquantum well lasers. It appears that the finiteness of carrier capture time affects not only the threshold current but also the differential quantum efficiency in high power operation through the absorption loss by the carriers in the optical confinement layers.
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42.55.Px Semiconductor lasers; laser diodes
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

High conversion efficiency of second‐harmonic generation in step quantum wells

Zhenghao Chen, Dafu Cui, Meihua Li, Chao Jiang, Junming Zhou, and Guozhen Yang

Appl. Phys. Lett. 61, 2401 (1992); http://dx.doi.org/10.1063/1.108177 (2 pages) | Cited 17 times

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Second‐harmonic generation due to intersubband transitions in GaAs/AlxGa1−xAs step quantum well structures has been studied with a tunable TEA CO2 laser. The maximum value of χ(2)(2ω) is found to be ∼9×10−7 m/V. Using a multipass or ‘‘waveguide’’ structure, a conversion efficiency of more than 3×10−4 has been obtained.  
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Demonstration of the optical Kerr effect at 10.6 μm via intersubband nonlinearities in a multi‐quantum well structure

Mordechai Segev, Ilan Gravé, and Amnon Yariv

Appl. Phys. Lett. 61, 2403 (1992); http://dx.doi.org/10.1063/1.108178 (3 pages) | Cited 5 times

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We demonstrate the optical Kerr effect at 10.6 μm in a GaAs/AlGaAs multi‐quantum well doped structure. The effect is due to the nonlinear susceptibility χ(3) near a resonant intersubband transition.  
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.65.-k Nonlinear optics

Cubic boron nitride formation on Si (100) substrates at room temperature by pulsed laser deposition

T. A. Friedmann, K. F. McCarty, E. J. Klaus, D. Boehme, W. M. Clift, H. A. Johnsen, M. J. Mills, and D. K. Ottesen

Appl. Phys. Lett. 61, 2406 (1992); http://dx.doi.org/10.1063/1.108179 (3 pages) | Cited 25 times

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We are studying the boron nitride system by using a pulsed excimer laser to ablate from hexagonal BN(hBN) targets to form BN films. We have deposited BN films on heated (600 °C) and room‐temperature silicon (100) surface in an ambient background gas of N2. Fourier transform infrared (FTIR) reflection spectroscopy indicates that the films grown at high temperature have short‐range sp2 (hexagonal‐like) order, whereas films grown at room temperature are a mixture of sp3‐bonded BN and sp2‐bonded BN. Electron diffraction confirms the presence of cubic BN (cBN) material in the films grown at low temperature and the corresponding TEM lattice images show a grain size of ∼200 Å. The presence of cBN in the films correlates with laser energy density, with cubic material appearing around 2.4 mJ/cm2. Auger electron spectroscopy (AES) indicates that the films are nitrogen deficient.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology

Buried single‐crystal CoSi2 layers in SiGe alloys made by ion beam synthesis

R. Jebasinski, S. Mantl, Chr. Dieker, G. Crecelius, H. Dederichs, and L. Vescan

Appl. Phys. Lett. 61, 2409 (1992); http://dx.doi.org/10.1063/1.108180 (3 pages) | Cited 2 times

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The synthesis of buried CoSi2 layers in Si0.91Ge0.09 alloys by the implantation of high doses of 100 and 150 keV Co+ ions and subsequent rapid thermal annealing at T≥1000 °C is studied by x‐ray diffraction, Rutherford backscattering spectroscopy, He ion channeling, Auger electron spectroscopy, and transmission electron microscopy. After annealing, a buried single‐crystal CoSi2 layer containing ≊1 at. % Ge is formed in the SiGe alloy. Silicide formation causes an outdiffusion of Ge leading to an increase in the Ge concentration of the adjacent SiGe layers. The remaining Ge within the silicide layer is found to be present as Si‐Ge islands with the composition of the virgin Si0.91Ge0.09 alloy.
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68.55.-a Thin film structure and morphology

YBa2Cu3O7 thin films grown on sapphire with epitaxial yttria‐stabilized zirconia buffer layers

L. F. Chen, P. F. Chen, L. Li, S. L. Li, X. N. Jing, S. J. Pan, and Y. H. Guo

Appl. Phys. Lett. 61, 2412 (1992); http://dx.doi.org/10.1063/1.108181 (2 pages) | Cited 2 times

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Epitaxial yttria‐stabilized zirconia (YSZ) buffer layers were grown successfully on sapphire (1120) substrates by using rf magnetron sputtering method. The films were cubic in structure with their (100) orientation normal to the substrate surface. YBa2Cu3O7 thin films were deposited on the YSZ/sapphire substrates by the in situ dc magnetron sputtering method. X‐ray diffraction analysis showed they were highly c‐axis oriented with the zero resistance temperature TCO=92 K and critical current density Jc=1.6×106 A/cm2 at 77 K.
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81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology
74.70.-b Superconducting materials other than cuprates

Mechanism of chemical erosion of sputter‐deposited C:H films

A. Schenk, J. Biener, B. Winter, C. Lutterloh, U. A. Schubert, and J. Küppers

Appl. Phys. Lett. 61, 2414 (1992); http://dx.doi.org/10.1063/1.108182 (3 pages) | Cited 23 times

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The mechanism of thermally activated chemical erosion of sputter‐deposited C:H films of a few atomic layer thickness is investigated using thermal desorption spectroscopy. Methane, CH3 radicals, and various C2Hj species of molecular and radical nature desorb as gaseous products above 600 K competitively to H2. C‐CiHj bond breaking is determined to be the rate limiting step of hydrocarbon production. The reaction is of first order with respect to CiHj precursors in the films with a distribution of activation energies, 56±5 kcal/mol for methane production. CH3 radical desorption occurs predominantly from the very surface of the C:H films.
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81.65.-b Surface treatments
81.15.Cd Deposition by sputtering

Observation and modeling of quasiepitaxial growth of a crystalline organic thin film

P. E. Burrows, Y. Zhang, E. I. Haskal, and S. R. Forrest

Appl. Phys. Lett. 61, 2417 (1992); http://dx.doi.org/10.1063/1.108183 (3 pages) | Cited 26 times

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We directly observe, using the scanning tunneling microscope, a two‐dimensional crystal of the organic compound 3, 4, 9, 10‐perylenetetracarboxylic dianhydride (PTCDA). The surface unit cell dimension is found to be 21.6±2.2 Å by 15.2±1.6 Å, or approximately 20% larger than the bulk unit cell. Furthermore, the organic lattice is oriented with respect to the graphite substrate even though the two lattices are incommensurate. These observations are consistent with reflection high energy electron diffraction measurements, and energy minimization calculations, assuming that the van der Waals bond is the predominant intermolecular force which determines the equilibrium crystal structure. The combination of measurement and theory provides the first step in developing tools for predicting the conditions which lead to quasiepitaxial growth of these technologically important van der Waals solids.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Multiple photochemical switching device based on Langmuir–Blodgett films

Hiroaki Tachibana, Eiichiro Manda, Reiko Azumi, Takayoshi Nakamura, Mutsuyoshi Matsumoto, and Yasujiro Kawabata

Appl. Phys. Lett. 61, 2420 (1992); http://dx.doi.org/10.1063/1.108184 (2 pages) | Cited 10 times

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We have demonstrated that the multiple photochemical switching device can be fabricated by successive deposition of two different photochemical switching Langmuir–Blodgett (LB) films consisting of molecules with switching, transmission, and working units, each corresponding to azobenzene derivatives, alkyl chain, and conductive pyridinium (TCNQ)2 complex, respectively. The photoisomerization of switching units causes a change in conductivity of the LB films, which is associated with working units. When molecules with different switching units are used to assemble the device, its conductivity can be controlled by the irradiation with four types of control light.
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78.66.Qn Polymers; organic compounds
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
82.50.-m Photochemistry

Differential scanning calorimetric study of hydrogen–induced amorphization in C15 Laves phase GdCo2

K. Aoki, X‐G. Li, T. Hirata, and T. Masumoto

Appl. Phys. Lett. 61, 2422 (1992); http://dx.doi.org/10.1063/1.108185 (3 pages) | Cited 4 times

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Differential scanning calorimetry and x‐ray diffractometry have been used to monitor reactions of the C15 Laves phase GdCo2 during constant‐rate heating in a hydrogen atmosphere and to determine the enthalpy change of each reaction. The values of the enthalpy change ΔH of hydrogen absorption, hydrogen‐induced amorphization and crystallization are evaluated to be −67.2, −10.2, and −9.8 kJ/mol Gd, respectively. On the other hand, ΔH of hydrogen desorption is +31.4 kJ/mol Gd. The amorphous a‐GdCo2Hx alloy crystallizes to GdH2 and Co. Therefore, the total value of ΔH of the above reactions along with the formation of GdCo2, −103 kJ/mol Gd, becomes nearly equal to that of formation of GdH2, −101 kJ/mol Gd.  
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81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
61.43.Fs Glasses
61.43.-j Disordered solids
61.44.Br Quasicrystals

Negative differential conductance observed in a lateral double constriction device

J. C. Wu, M. N. Wybourne, C. Berven, S. M. Goodnick, and Doran D. Smith

Appl. Phys. Lett. 61, 2425 (1992); http://dx.doi.org/10.1063/1.108186 (3 pages) | Cited 9 times

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Lateral double point contact devices were fabricated using a split‐gate high electron mobility transistor. The low‐temperature source‐drain characteristics show pronounced S‐shaped negative differential conductance that can be independently controlled by an applied gate bias. The mechanism for the observed switching behavior is believed to be similar to that proposed for heterostructure hot electron diodes.
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85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
85.30.Tv Field effect devices

Room temperature, local tailoring of electronic properties of Hg0.3Cd0.7Te by applying an external electric field

Konstantin Gartsman, Leonid Chernyak, Jean Marc Gilet, David Cahen, and Robert Triboulet

Appl. Phys. Lett. 61, 2428 (1992); http://dx.doi.org/10.1063/1.108459 (3 pages) | Cited 14 times

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Electronic properties of initially homogeneous (Hg,Cd)Te samples have been modified on a local scale, in a stable manner at room temperature, by reverse biasing of small‐area Schottky contacts on them. This was shown, after the bias voltage had been lifted, by current‐voltage measurements and by electron beam‐induced current scans. The creation of a clear diodelike structure in the vicinity of the Schottky contact on a scale of about hundred μm could be explained by electromigration of electrically active ions and/or by generation of point and line defects. The latter type of defect was revealed by chemical etch after application of the field.
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71.55.Gs II-VI semiconductors
66.30.Qa Electromigration
72.80.Ey III-V and II-VI semiconductors

Microcrystal growth of GaAs on a Se‐terminated GaAlAs surface for the quantum‐well box structure by sequential supplies of Ga and As molecular beams

Toyohiro Chikyow and Nobuyuki Koguchi

Appl. Phys. Lett. 61, 2431 (1992); http://dx.doi.org/10.1063/1.108187 (3 pages) | Cited 8 times

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A growth of GaAs microcrystals on a Se‐terminated GaAlAs surface was demonstrated for the first time for the quantum‐well box fabrication. At first, Ga molecules were supplied to the Se‐terminated GaAlAs surface to form Ga droplets. The surface consisted of Ga droplets and a bared Se‐terminated GaAlAs surface. In the following As molecule supply to the surface, GaAs microcrystals were observed to grow epitaxially on the surface. As for GaAs growth on an As stabilized GaAlAs surface, which was also carried out with sequential supplies of Ga and As molecules, lateral growth of GaAs was observed. From the obtained results, this newly proposed method is expected to be useful in fabricating GaAs microcrystals for the quantum‐well box structure.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)

Normal incidence infrared detector using intervalence‐subband transitions in Si1−xGex/Si quantum wells

R. P. G. Karunasiri, J. S. Park, and K. L. Wang

Appl. Phys. Lett. 61, 2434 (1992); http://dx.doi.org/10.1063/1.108188 (3 pages) | Cited 23 times

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Normal incidence infrared detection due to intervalence band transitions of holes is demonstrated using Si1−xGex/Si multiple quantum‐well structures. Two samples with Ge composition (x) of 30% and 60% are used in this study and broad photoresponse peaks (∼100 meV) at near 3 and 2 μm, respectively, are observed. The peak positions of the photoresponse are in close agreement with those observed in the absorption measurement using a waveguide geometry. The low‐temperature photocurrent spectrum for each sample shows that the broad absorption peak at room temperature consists of many peaks due to several transitions. From the calculated energy levels due to different hole bands, we conclude that the transitions are from the heavy‐hole ground state to the split‐off and continuum states. This principle of normal incidence detection can be readily implemented for focal plane infrared detection in the 3–5 μm (and 8–12 μm) range with potential for monolithic integration with Si signal processing circuits.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
78.66.-w Optical properties of specific thin films
73.50.Pz Photoconduction and photovoltaic effects

Quantum well infrared photodetectors with bi‐periodic grating couplers

C. P. Lee, K. H. Chang, and K. L. Tsai

Appl. Phys. Lett. 61, 2437 (1992); http://dx.doi.org/10.1063/1.108189 (3 pages) | Cited 3 times

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Multiple quantum well infrared photodetectors (QWIPs) with bi‐periodic grating couplers have been demonstrated. The bi‐periodic grating consists of two gratings with different periods. The response linewidths of such QWIPs are found to be much wider than those of conventional grating coupled QWIPs. By using bi‐periodic gratings for coupling the radiation into QWIPs, the influence of variation of material and grating quality on the performance of QWIP can be largely eliminated.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Microsecond lifetimes and low interface recombination velocities in moderately doped n‐GaAs thin films

G. B. Lush, M. R. Melloch, M. S. Lundstrom, D. H. Levi, R. K. Ahrenkiel, and H. F. MacMillan

Appl. Phys. Lett. 61, 2440 (1992); http://dx.doi.org/10.1063/1.108190 (3 pages) | Cited 8 times

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We have observed lifetimes greater than 1 μs in moderately doped, thin film, n‐GaAs/Al0.3Ga0.7As double heterostructure membranes formed by etching away the substrate. We attribute these ultralong lifetimes to enhanced photon recycling caused by the removal of the substrate. Nonradiative recombination in the bulk and at the interfaces is very low; the upper limit of the interface recombination velocity is 25 cm/s. Such long lifetimes in GaAs doped at ND=1.3×1017 cm−3 suggest that thin‐film solar cells offer a potential option for achieving very high efficiencies.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Pz Photoconduction and photovoltaic effects
84.60.Jt Photoelectric conversion

Deep center photoluminescence study of low‐temperature InP grown by molecular beam epitaxy

P. W. Yu, B. W. Liang, and C. W. Tu

Appl. Phys. Lett. 61, 2443 (1992); http://dx.doi.org/10.1063/1.108167 (3 pages) | Cited 9 times

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Low‐temperature grown (130–480 °C) InP was investigated using photoluminescence spectroscopy with changes of excitation intensity and temperature. Two deep broad photoluminescence bands at ∼0.8 and 1.06 eV are present in undoped and Be‐doped materials, and their formation strongly depends on the growth temperature. PIn and VIn related centers are associated with the transitions at 0.8 and 1.06 eV bands via the deep donor PIn–Be acceptor pair and the conduction band‐to‐VIn acceptor transitions, respectively. A configuration coordinate model is used to locate the deep donor and acceptor levels.  
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78.55.Cr III-V semiconductors
71.55.Eq III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Visible photoluminescence of silicon‐based nanostructures: Porous silicon and small silicon‐based clusters

Yoshihiko Kanemitsu, Katsunori Suzuki, Hiroshi Uto, Yasuaki Masumoto, Takahiro Matsumoto, Soichiro Kyushin, Koichi Higuchi, and Hideyuki Matsumoto

Appl. Phys. Lett. 61, 2446 (1992); http://dx.doi.org/10.1063/1.108147 (3 pages) | Cited 49 times

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We have studied and compared the optical properties of both porous Si and the chemically synthesized planar and cubic Si skeleton clusters. Broad photoluminescence with large Stokes shifts were observed at the visible region in both samples. Spectroscopic analysis suggests that the surface of porous Si is similar to a condensation of Si clusters. Small Si clusters play a key role in the strong room‐temperature photoluminescence in porous Si.  
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78.55.Hx Other solid inorganic materials
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Double‐wavelength laser array with InGaAsP/InGaAsP multiple quantum well grown by Ar ion laser‐assisted metalorganic molecular beam epitaxy

T. Yamada, R. Iga, and H. Sugiura

Appl. Phys. Lett. 61, 2449 (1992); http://dx.doi.org/10.1063/1.108148 (3 pages) | Cited 11 times

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This letter reports a laser diode array of InGaAsP/InGaAsP multiple quantum well (MQW) lasers, emitting at different wavelengths, grown by Ar ion laser assisted metalorganic molecular beam epitaxy. A separate confinement heterostructure MQW laser film was locally irradiated during well growth with an Ar ion laser and processed into a laser diode array having a 6 μm stripe width and 300 μm pitch. The laser diode with an irradiated MQW active layer operated at 1.40 μm; the laser diodes with nonirradiated MQW active layers operated at 1.28 μm. The threshold currents of the 300 μm‐long laser diodes were 23 mA for the irradiated diode and 55 mA for the nonirradiated diodes.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation
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