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7 Dec 1992

Volume 61, Issue 23, pp. 2741-2831

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Second harmonic generation at 972 nm using a distributed Bragg reflection semiconductor laser

C. Zimmermann, T. W. Hänsch, R. Byer, S. O’Brien, and D. Welch

Appl. Phys. Lett. 61, 2741 (1992); http://dx.doi.org/10.1063/1.108075 (3 pages) | Cited 7 times

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We have doubled the frequency of a single mode distributed Bragg reflection (DBR) semiconductor laser. The laser is optically locked to an external enhancement ring resonator that contains an antireflection coated potassium niobate crystal. Unlike Fabry–Perot cavity lasers the DBR laser is found to operate in only one longitudinal mode and allows stable second harmonic generation. We present the results obtained with a singly and doubly resonant cavity. A total output of 1.2 mW tunable single mode radiation near 486 nm has been generated from a laser output power of 25 mW at 972 nm without the use of optical isolators or active feedback control.
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42.55.Px Semiconductor lasers; laser diodes
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Neodymium‐doped glass channel waveguide laser containing an integrated distributed Bragg reflector

J. E. Roman and K. A. Winick

Appl. Phys. Lett. 61, 2744 (1992); http://dx.doi.org/10.1063/1.108076 (3 pages) | Cited 19 times

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An integrated, distributed Bragg reflector laser in a Nd‐doped, glass, channel waveguide is reported for the first time. The waveguide is fabricated using Ag+ thermal ion exchange in a soda‐lime‐silicate‐glass containing 2% Nd2O3 by weight. The distributed Bragg reflector grating is produced holographically in photoresist and then etched into the waveguide using argon ion milling. The device lases in a single longitudinal mode with a pump threshold of 50 mW and a slope efficiency of 1%.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.79.Dj Gratings
42.82.Et Waveguides, couplers, and arrays

Large third‐order optical nonlinearity of nanometer‐sized amorphous semiconductor: Phosphorous colloids formed in SiO2 glass by ion implantation

Hideo Hosono, Yoshihiro Abe, Ying L. Lee, Takashi Tokizaki, and Arao Nakamura

Appl. Phys. Lett. 61, 2747 (1992); http://dx.doi.org/10.1063/1.108077 (3 pages) | Cited 17 times

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This article reports large nonlinear susceptibility χ(3) of nanometer‐sized particles of amorphous phosphorus. Nanocomposites of amorphous red phosphorous colloid particles (3–5 nm in diameter) and SiO2 glasses have been fabricated by ion implantation technique. Silica glasses implanted at an acceleration voltage of 180 keV to a dose of 5×1017 P+ ions/cm2 shows χ(3) of ∼1×10−6 esu, which is comparable to quantum‐sized crystals of semiconductors such as CuCl and CdS1−xSex. This is the first finding that quantum dots of amorphous semiconductors embedded in dielectrics exhibits such a large χ(3).
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
61.72.up Other materials

Wavelength‐selectable laser emission from a multistripe array grating integrated cavity laser

J. B. D. Soole, K. R. Poguntke, A. Scherer, H. P. LeBlanc, C. Chang‐Hasnain, J. R. Hayes, C. Caneau, R. Bhat, and M. A. Koza

Appl. Phys. Lett. 61, 2750 (1992); http://dx.doi.org/10.1063/1.108078 (3 pages) | Cited 7 times

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We report laser operation of a multistripe array grating integrated cavity (MAGIC) laser in which the wavelength of the emission from a single output stripe is chosen by selectively injection pumping a second stripe. We demonstrate a device that lases in the 1.5 μm fiber band at 15 wavelengths, evenly spaced by ∼2 nm. The single‐output/wavelength‐selectable operation, together with the accurate predefinition of the lasing wavelengths, makes the MAGIC laser a very attractive candidate for use in multiwavelength networks.
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42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Programmable electro‐optic waveguide filter

H. Okayama and M. Kawahara

Appl. Phys. Lett. 61, 2753 (1992); http://dx.doi.org/10.1063/1.108079 (3 pages) | Cited 3 times

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Programmable filters with multisection electro‐optic mode converter structures are proposed, with which wavelength tuning without increasing the drive voltage and simultaneous selection of multiple wavelengths can be realized.
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42.79.Ci Filters, zone plates, and polarizers
42.79.Hp Optical processors, correlators, and modulators
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Simple model for the study of period‐doubling instabilities in the nonlinear ring cavity

M. Haelterman

Appl. Phys. Lett. 61, 2756 (1992); http://dx.doi.org/10.1063/1.108080 (3 pages) | Cited 6 times

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In the good cavity limit, the two‐dimensional Ikeda map [K. Ikeda, Opt. Commun. 30, 257 (1979)] representing the evolution of the field in a nonlinear ring cavity may be approximated by a set of two coupled‐differential equations for the description of the dynamics of the period‐2 regime of Ikeda instability. Our theory, which constitutes a generalization, to period doubling, of the single‐mode mean‐field theory of passive nonlinear cavities, provides a new insight of Ikeda instabilities in these devices.
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42.60.Mi Dynamical laser instabilities; noisy laser behavior

Single mode potassium and silver ion‐exchanged glass waveguides with low losses and high index increase

H. Helmers, O. G. Helleso, P. Benech, and R. Rimet

Appl. Phys. Lett. 61, 2759 (1992); http://dx.doi.org/10.1063/1.108081 (2 pages) | Cited 4 times

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An improved method for fabricating single mode, low loss optical waveguides using a two step potassium and silver ion exchange in glass is reported. The waveguides are compatible with optical fibers and butt coupling of diode lasers. Propagation losses, down to 0.4 dB/cm, are measured for a wavelength of 780 nm. In the single mode waveguide, an index increase of 1% is obtained, which allows small bending losses for curvatures with a radius down to 2 mm.  
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42.79.Gn Optical waveguides and couplers
42.82.Cr Fabrication techniques; lithography, pattern transfer

Photorefractive properties and self‐pumped phase conjugation of tetragonal Fe‐doped KTa1−xNbxO3 crystal

Jiyang Wang, Qingcai Guan, Yaogang Liu, Jingqian Wei, Dadi Wang, Yingwu Lian, Huaguang Yang, and Peixian Ye

Appl. Phys. Lett. 61, 2761 (1992); http://dx.doi.org/10.1063/1.108082 (3 pages) | Cited 12 times

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This letter reports the two‐wave mixing experimental results of tetragonal Fe‐doped KTa1−xNbxO3. A 7.3 cm−1 gain coefficient and 42% diffraction efficiency have been obtained. For the first time internally self‐pumped phase conjugation is being observed in this crystal. At room temperature, the conjugate reflectivity measured is 21%.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Coherent measurement of THz optical rectification from electro‐optic crystals

X.‐C. Zhang, Y. Jin, and X. F. Ma

Appl. Phys. Lett. 61, 2764 (1992); http://dx.doi.org/10.1063/1.108083 (3 pages) | Cited 61 times

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We report the results of coherent measurement (phase and amplitude) of optical rectification from a variety of electro‐optic crystals. We also present a comparison of the experimental data with a theoretical calculation.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Qn Polymers; organic compounds
78.20.Jq Electro-optical effects

Above‐ and below‐band femtosecond nonlinearities in active AlGaAs waveguides

C. T. Hultgren, D. J. Dougherty, and E. P. Ippen

Appl. Phys. Lett. 61, 2767 (1992); http://dx.doi.org/10.1063/1.108084 (3 pages) | Cited 40 times

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Femtosecond optical pulses were used to study the gain and refractive index dynamics in a bulk AlGaAs diode laser. Experiments were performed at wavelengths above and below the band gap of the diode‐laser active region. The above‐band gain dynamics exhibit an ultrafast transient that has not been seen before in AlGaAs devices. We attribute this dynamic to spectral‐hole burning and a delay in carrier heating. The below‐band refractive index measurements demonstrate that carrier heating by free‐carrier absorption is important and that there is a delay in the onset of this heating of approximately 120 fs.
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42.55.Px Semiconductor lasers; laser diodes
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Optical evaluation of an AlAs/AlGaAs visible Bragg reflector grown by chemical beam epitaxy

J. V. Armstrong, T. Farrell, A. Boyd, and R. Beanland

Appl. Phys. Lett. 61, 2770 (1992); http://dx.doi.org/10.1063/1.108085 (3 pages) | Cited 7 times

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A 21 layer AlAs/Al0.4Ga0.6As multilayer structure, designed as a Bragg reflector centered at 670 nm, has been grown by chemical beam epitaxy. The growth was monitored in real time by dynamic optical reflectivity (DOR) using a 670 nm semiconductor diode laser. The resultant DOR trace was compared to a computer simulation for the growth structure and good agreement is obtained using layer thicknesses measured by transmission electron microscopy. The wavelength dependent reflectivity of the Bragg reflector was measured using a grating spectrometer and good agreement is obtained to a computer simulation once the dispersive complex refractive index is taken into account.
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42.79.Fm Reflectors, beam splitters, and deflectors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Electroabsorption modulator based on Wannier–Stark localization with 20 GHz/V efficiency

Fabrice Devaux, Erwan Bigan, Michel Allovon, Jean‐Christophe Harmand, Frederic Huet, Madeleine Carré, and Jean Landreau

Appl. Phys. Lett. 61, 2773 (1992); http://dx.doi.org/10.1063/1.108086 (3 pages) | Cited 8 times

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We report on a ridge‐waveguide modulator based on Wannier–Stark localization in an InGaAs/InAlAs superlattice. Anisotropic absorption is measured and efficient modulation is obtained in the low‐field domain and in the high‐field domain with TE‐polarized light. The device exhibits outstanding HF characteristics: in terms of bandwidth‐to‐drive‐voltage ratio, we find that the Wannier–Stark localization is far more efficient than the quantum Stark effect.
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42.79.Hp Optical processors, correlators, and modulators
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Calculation of slow mode surface plasmon polariton properties related to experimental observations

M. P. Connolly, M. A. B. Whitaker, and P. Dawson

Appl. Phys. Lett. 61, 2776 (1992); http://dx.doi.org/10.1063/1.108087 (3 pages) | Cited 3 times

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Recent experimental results definitively showed, for the first time, optical radiation mediated by the slow mode surface plasmon polariton of metal‐oxide‐metal tunnel junctions. Here, dispersion curves for this mode are calculated. They are consistent with first‐order grating coupling to light at the energies of the experimental emission peaks. The curves are then used to analyze second‐order and high‐energy (≳2.35 eV) grating coupling of the polaritons to radiation. Finally, variation of slow mode damping as a function of energy is used to explain qualitatively the relative experimental peak emission intensities and the absence of radiation peaks above 2.35 eV.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Rw Metal-insulator-metal structures
73.40.Gk Tunneling

Emission of microwave and millimeter wavelength radiation during hollow cathode discharge operation of the back lighted thyratron

R. Liou, H. Figueroa, A. H. McCurdy, G. Kirkman‐Amemiya, R. J. Temkin, H. Fetterman, and M. A. Gundersen

Appl. Phys. Lett. 61, 2779 (1992); http://dx.doi.org/10.1063/1.108088 (3 pages) | Cited 4 times

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Experimental observation of pulsed radiation ranging from ∼20 GHz to above 100 GHz during the hollow cathode discharge phase of operation of a back‐lighted thyratron is reported. The discharge is operated with 120 mTorr Ar gas at 20 kV initial voltage. Pulsed radiation was observed for ∼50 ns, and an electron beam with energy of ∼20 keV was also observed. The observations are correlated with plasma processes predicted in recent computer simulations. The sudden turn‐off of the radiation is believed to be a result of plasma expansion and sheath contraction inside the hollow cathode region. A method for varying the pulse length is discussed.
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52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.80.Hc Glow; corona
84.47.+w Vacuum tubes

Novel method for C60 synthesis: A thermal plasma at atmospheric pressure

Ken‐ichi Yoshie, Shigeaki Kasuya, Keisuke Eguchi, and Toyonobu Yoshida

Appl. Phys. Lett. 61, 2782 (1992); http://dx.doi.org/10.1063/1.108089 (2 pages) | Cited 24 times

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We report here that fullerenes (C60,C70,C84, etc.) can be fabricated in a 7% yield by carbon particle evaporation in a hybrid plasma which is characterized by the superposition of a rf plasma and a dc arc jet operated at atmospheric pressure. We found that increasing the pressure in the plasma gas increases the yield of fullerenes. We also investigated the effect of introducing the gas for quenching the plasma gas on the yield of fullerenes. Furthermore, this method has also been used to produce metal fulleride.
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81.10.Bk Growth from vapor
52.80.Pi High-frequency and RF discharges

Novel geometrical effects observed in debris when polymers are laser sputtered

Antonio Miotello, Roger Kelly, Bodil Braren, and Charles E. Otis

Appl. Phys. Lett. 61, 2784 (1992); http://dx.doi.org/10.1063/1.108090 (3 pages) | Cited 18 times

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When polymers are sputtered with 248 or 308 nm laser pulses there are two generically different responses. The most straightforward is where the emitted particles expand outwards away from the target surface obeying, in so doing, the laws of one‐dimensional adiabatic flow. The other is where the particles expand both outwards and sideways and, because a certain fraction recondenses on the target surface, there is a prominent deposit of debris lying around the bombarded spot. For spots with other than circular shape the debris show interesting symmetry in which there is rotation with respect to the spot. We show that this rotation occurs wholly through the laws of flow and we conclude, therefore, that the debris phenomenon is a purely gas‐dynamic effect. It follows that the elimination of debris can be approached in gas‐dynamic terms. We also show that the numerical extent of debris formation increases with the complexity of the particles involved, a result which suggests additional methods to control debris.
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79.20.Ds Laser-beam impact phenomena
81.65.-b Surface treatments
47.45.-n Rarefied gas dynamics

Preparation of polymeric metal‐tetracyanoquinodimethane film and its bistable switching

Jianping Gong and Yoshihito Osada

Appl. Phys. Lett. 61, 2787 (1992); http://dx.doi.org/10.1063/1.108091 (3 pages) | Cited 17 times

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Metal salts of charge transfer complex such as CuTCNQ, LiTCNQ and others have been found to dissolve in water when mixed with polyethyleneimine (PEI). From electronic spectra it was supposed that metal salts of organic complex form trilateral complex with PEI in water. Homogeneous and continuous polymeric thin film was prepared by casting this solution. The film with a thickness of 150–200 nm showed field‐induced bistable switching from low to high impedance regime at a field strength of 4×104 V/mm. A possible switching mechanism was briefly discussed.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Reactive ion etch damages in inverted, trilayer thin‐film transistor

Yue Kuo

Appl. Phys. Lett. 61, 2790 (1992); http://dx.doi.org/10.1063/1.108093 (3 pages) | Cited 11 times

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Plasma damages on the inverted, trilayer a‐Si:H thin‐film transistor from an n+ RIE process have been detected. These damages include a high threshold voltage, a high off current, and the divergence of the transfer characteristic curves under different drain voltages. Both the bulk of the films and the film‐film interfaces were damaged by the plasma. The former was proved by the relation between the threshold voltage shift and the gate dielectric layer thickness and materials. The latter was demonstrated by the plasma radiation exposure experiment. Plasma radiation, instead of the charge buildup on devices, is the major cause of the thin‐film transistor’s abnormality. All damages were easily repaired with a thermal annealing step.
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85.30.Tv Field effect devices
81.65.-b Surface treatments
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Poly(p‐phenylenevinylene) light‐emitting diodes: Enhanced electroluminescent efficiency through charge carrier confinement

A. R. Brown, D. D. C. Bradley, J. H. Burroughes, R. H. Friend, N. C. Greenham, P. L. Burn, A. B. Holmes, and A. Kraft

Appl. Phys. Lett. 61, 2793 (1992); http://dx.doi.org/10.1063/1.108094 (3 pages) | Cited 364 times

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We have fabricated light‐emitting diodes with poly(p‐phenylenevinylene) as the emissive layer, and with an electron‐transporting layer formed from a solid state dispersion of 2‐(4‐biphenylyl)‐5‐(4‐tert‐butylphenyl)‐1,3,4‐oxadiazole in poly(methyl methacrylate), placed between this and the negative electrode. These structures show typically a tenfold improvement in efficiency in the low‐voltage regime and an eightfold improvement in the high‐voltage regime over devices without the electron‐transporting layer. Typical efficiencies are about 0.8% photons/electron. We consider that the role of the electron‐transport layer is to confine holes to the emissive layer.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds

Molecular beam epitaxial growth of InGaAlAs/InGaAs heterojunction bipolar transistors on highly resistive low temperature InAlAs epilayers

A. Dodabalapur and T. Y. Chang

Appl. Phys. Lett. 61, 2796 (1992); http://dx.doi.org/10.1063/1.108067 (3 pages) | Cited 1 time

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In0.52Al0.48As epilayers grown by molecular beam epitaxy (MBE) at low temperatures typically possess resistivities of more than 105 Ω cm. We propose the use of such highly resistive epilayers to vertically isolate different devices on InP substrates. We demonstrate that high performance In0.52Ga0.24Al0.24As/In0.53Ga0.47As heterojunction bipolar transistors can be grown on top of such high resistivity buffer In0.52Al0.48As layers. Such HBTs have dc current gains of 1000 and emitter‐base pn junctions with ideality factors of 1.05. However, the MBE growth conditions required to obtain such good material are quite critical. We describe these conditions and also the electrical properties of both the HBTs and the resistive InAlAs layers.
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85.30.Pq Bipolar transistors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Ey III-V semiconductors

Analysis of normal‐incident absorption in p‐type quantum‐well infrared photodetectors

P. Man and D. S. Pan

Appl. Phys. Lett. 61, 2799 (1992); http://dx.doi.org/10.1063/1.108482 (3 pages) | Cited 26 times

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Normal‐incident absorption in the recently‐demonstrated, p‐type quantum‐well infrared photodetectors is analyzed with the k⋅p theory, under the envelope‐function approximation. A first‐principles calculation of the infrared‐absorption spectra is performed with no adjustable parameter. The responsivity is evaluated from the calculated normal‐incident absorption and the experimentally‐derived photoconductive gain. Good agreement is obtained with measurements at λ<λc. The bandwidths of the infrared‐absorption spectra are found to be limited by spin‐orbit splitting as well as the overlap integrals.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors
85.60.Gz Photodetectors (including infrared and CCD detectors)

Quantitative analysis of strain relaxation in GexSi1−x/Si(110) heterostructures and an accurate determination of stacking fault energy in GexSi1−x alloys

R. Hull, J. C. Bean, L. J. Peticolas, D. Bahnck, B. E. Weir, and L. C. Feldman

Appl. Phys. Lett. 61, 2802 (1992); http://dx.doi.org/10.1063/1.108068 (3 pages) | Cited 23 times

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We report a quantitative theoretical and experimental analysis of strain relaxation in GexSi1−x/Si(110) heterostructures. It is shown that above a critical composition, the critical thickness for edge a/6〈112〉 Shockley partial dislocations is less than that for 60° a/2〈110〉 total dislocations. The net (excess) stress is greater on the edge a/6〈112〉 dislocations for epilayer thicknesses, h<hx, but greater on the 60° a/2〈110〉 dislocations for h≳hx. The sensitive calculated dependence of hx upon the stacking fault energy per unit area γ allows an experimental determination of γ=65±10 mJ m−2 for x∼0.3 in GexSi1−x.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.72.Lk Linear defects: dislocations, disclinations
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Amorphous diamondlike carbon‐silicon heterojunction devices formed by ion implantation

N. Konofaos and C. B. Thomas

Appl. Phys. Lett. 61, 2805 (1992); http://dx.doi.org/10.1063/1.108481 (3 pages) | Cited 15 times

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Amorphous carbon films grown onto silicon substrates and characterized as diamondlike have been ion implanted with boron and nitrogen to achieve p‐type and n‐type conductivity, respectively. Energies of 120 keV were used for the ion implantation. After isothermal heat treatment, the films revealed diode characteristics for both p‐carbon/n‐carbon and n‐carbon/p‐silicon structures. Current‐voltage characteristics and capacitance‐voltage curves show that the devices performed as heterojunctions between the carbon and the silicon. The difference between the currents for reverse and forward bias were as high as six orders of magnitude.
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85.30.Kk Junction diodes
61.72.up Other materials
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

InAs/Ga0.47In0.53As quantum wells: A new III‐V materials system for light emission in the mid‐infrared wavelength range

Eric Tournié, Klaus H. Ploog, and Claude Alibert

Appl. Phys. Lett. 61, 2808 (1992); http://dx.doi.org/10.1063/1.108044 (3 pages) | Cited 12 times

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We propose the use of strained InAs/Ga0.47In0.53As quantum wells (QWs) for light emission in the technologically important mid‐IR wavelength range. Temperature dependent photoluminescence measurements on single QWs demonstrate that light emission at room temperature is obtained from all samples having InAs QW widths between 2 and 23 monolayers. Luminescence up to 2.4 μm is obtained at 300 K, which is the longest wavelength achieved so far for QWs grown on InP. These results demonstrate the potential of the InAs/Ga0.47In0.53As QW materials system for the fabrication of optoelectronic devices operating in the mid‐IR.
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78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors

Extremely low resistivity, high electron concentration ZnSe grown by planar‐doping method

Ziqiang Zhu, Hiroshi Mori, and Takafumi Yao

Appl. Phys. Lett. 61, 2811 (1992); http://dx.doi.org/10.1063/1.108045 (3 pages) | Cited 9 times

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The n‐type ZnSe with electron concentration up to 3×1020 cm−3 and low resistivity down to 1×10−4 Ω cm has been grown using a planar‐doping technique of chlorine during molecular beam epitaxy. The photoluminescence evaluation shows that the planar‐doped ZnSe layers are superior to uniformly doped ones especially for the case of high Cl doping. The in‐depth profile of Cl concentration in a planar‐doped sample was measured with a secondary ion mass spectroscopy (SIMS). The SIMS analysis shows only slight diffusion of the incorporated Cl atoms even in highly doped samples.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Ga II-VI semiconductors
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