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14 Dec 1992

Volume 61, Issue 24, pp. 2845-2937

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Polarization insensitive strained quantum well gain medium for lasers and optical amplifiers

Atul Mathur and P. Daniel Dapkus

Appl. Phys. Lett. 61, 2845 (1992); http://dx.doi.org/10.1063/1.108052 (3 pages) | Cited 19 times

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1.3 μm In1−xGaxAsyP1−y/InP lasers with compressive and tensile strained quantum wells have been found to lase in both transverse electric (TE) and transverse magnetic (TM) polarizations. Amplified spontaneous emission spectra indicate gain in both TE and TM modes. The relative magnitudes depend on device length and injection current. This structure can be used as a polarization insensitive optical amplifier.
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42.55.Px Semiconductor lasers; laser diodes
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

LiNbO3 thin‐film optical waveguide grown by liquid phase epitaxy using Li2O‐B2O3 flux

Atsuo Yamada, Hitoshi Tamada, and Masaki Saitoh

Appl. Phys. Lett. 61, 2848 (1992); http://dx.doi.org/10.1063/1.108053 (3 pages) | Cited 20 times

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Nearly stoichiometric LiNbO3 thin‐film waveguides with high crystallinity and good surface morphology were grown on a 5 mol % MgO‐doped Z‐plate LiNbO3 substrate by liquid phase epitaxy using Li2O‐B2O3 flux. The profile of the film‐substrate interface was estimated to be nearly a step and a domain inversion with a distinct boundary at the −Z surface of the substrate was observed. Waveguiding was realized for an ordinary wave, but not for an extraordinary wave. There existed no significant optical absorption to the fundamental absorption edge, resulting in a negligibly small propagation loss of less than 1 dB/cm at a wavelength of 458 nm.
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42.79.Gn Optical waveguides and couplers
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Single quantum well GaAs/AlGaAs separate confinement heterostructure lasers with n‐type modulation doped cores

S. M. Shank, J. A. Varriano, and G. W. Wicks

Appl. Phys. Lett. 61, 2851 (1992); http://dx.doi.org/10.1063/1.108054 (3 pages) | Cited 6 times

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Separate confinement heterostructure single quantum well GaAs/AlGaAs lasers with n‐type modulation doped active regions are studied. Quantum well absorption is significantly modified by n‐type modulation doping. The effects of modulation doping on transparency current density and threshold current density are determined. Modulation doping is shown to reduce transparency current density, thereby also reducing threshold current density. Threshold current densities are reduced by 30%, to values of less than 150 A/cm2 for long cavities. The effects on distributed loss and differential gain are also reported. No degradation of laser performance is observed due to the location of the electrical junction away from the active region or due to free carrier absorption loss. Heavily modulation doped structures lase on the second quantized state.
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42.55.Px Semiconductor lasers; laser diodes
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Angle and temperature tuning of phase‐matched second‐harmonic generation in N‐(4‐nitrophenyl)‐N‐methylaminoacetonitrile

Ryuji Morita and Petar V. Vidakovic

Appl. Phys. Lett. 61, 2854 (1992); http://dx.doi.org/10.1063/1.108055 (3 pages) | Cited 3 times

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N‐(4‐nitrophenyl)‐N‐methylaminoacetonitrile is shown to be a very efficient nonlinear organic material. Angularly phase‐matched second‐harmonic generation efficiencies as high as 1.8×10−3, 2.0×10−4, and 1.2×10−4 W−1 at 1.064, 1.21, and 1.30 μm, respectively, have been measured by using cw Nd:YAG and semiconductor lasers as fundamental sources. Temperature‐tuning sensitivities of phase‐matched second‐harmonic generation have been found to be among the largest ever measured. Values obtained at 1.064, 1.21, and 1.30 μm are −1.2, −1.2, and −1.4 mrad/°C, respectively.
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42.70.Jk Polymers and organics
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Surface production of H− ions by hyperthermal hydrogen atoms

Brian S. Lee and M. Seidl

Appl. Phys. Lett. 61, 2857 (1992); http://dx.doi.org/10.1063/1.108056 (3 pages) | Cited 11 times

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Hyperthermal atomic hydrogen of energy in the range of 1–10 eV has been produced by electron impact dissociation in a cw 2.45 GHz microwave electron cyclotron resonance (ECR) discharge using a Lisitano‐Coil. The flux and the energy of the hydrogen atoms have been measured by negative surface ionization of the atoms backscattered from pure and cesiated metal surfaces. A hyperthermal atomic hydrogen flux density equivalent to more than 0.5 A/cm2 and a temperature of about 5 eV has been produced for 420 W discharge power under cw condition. These hydrogen atoms can be directed onto an external converter located outside the discharge. This opens up new possibilities for H− ion source design.
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41.75.Cn Negative-ion beams
52.80.Pi High-frequency and RF discharges
29.25.Ni Ion sources: positive and negative

Isotopically pure diamond anvil for ultrahigh pressure research

Yogesh K. Vohra and Suresh S. Vagarali

Appl. Phys. Lett. 61, 2860 (1992); http://dx.doi.org/10.1063/1.108057 (3 pages) | Cited 11 times

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Large gem quality type IIa crystal of isotopically pure 12C diamond (364 mgm) was evaluated for applications as an anvil in ultrahigh pressure research. Raman microprobe and photoluminescence studies on 12C diamond were compared with a typical type Ia natural diamond anvil used in high pressure research. Visible fluorescence in the isotopically pure diamond is an order of magnitude lower as compared to natural diamond and is ideal for spectroscopic studies in diamond cell devices. Low intrinsic strain, high purity and crystal perfection of 12C diamond anvil offer better performance under extreme stresses.
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78.20.-e Optical properties of bulk materials and thin films
78.30.Hv Other nonmetallic inorganics
07.35.+k High-pressure apparatus; shock tubes; diamond anvil cells

Low‐pressure, low‐temperature, and remote‐plasma deposition of diamond thin films from water‐methanol mixtures

R. K. Singh, D. Gilbert, R. Tellshow, P. H. Holloway, R. Ochoa, J. H. Simmons, and R. Koba

Appl. Phys. Lett. 61, 2863 (1992); http://dx.doi.org/10.1063/1.108058 (3 pages) | Cited 20 times

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We have deposited diamond thin films remote from the active plasma region using an electron cyclotron resonance chemical vapor deposition technique. Diamond films were fabricated at temperatures in the range of 550–650 °C and gas pressures between 25 and 60 mTorr. The volume ratio of water to methanol was varied from 1:20 to 1:5 to optimize diamond film growth. High methanol content resulted in multiple nucleation in the growing diamond film, while higher water content led to complete etching of the film. A positive electrical bias was found to be essential for diamond thin film growth remote from the plasma region. The films were characterized by x‐ray diffraction, micro‐Raman, and scanning electron microscopy for phase identification, surface morphology, and bonding characteristics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Picosecond recombination processes in lead selenide

Robert Klann, Thomas Höfer, Rainer Buhleier, Thomas Elsaesser, and Armin Lambrecht

Appl. Phys. Lett. 61, 2866 (1992); http://dx.doi.org/10.1063/1.108059 (3 pages) | Cited 4 times

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Picosecond recombination processes of photoexcited electron‐hole plasma in PbSe are directly monitored by time‐resolved pump‐probe experiments in the wavelength range from 3 to 9 μm. At temperatures T≤70 K, a rapid decrease of carrier density within 100 ps is found for excitation densities higher than 7×1017 cm−3. This behavior is due to recombination by stimulated emission, as is evident from comparative measurements of midinfrared luminescence spectra. At T=300 K, Auger recombination on a time scale of 2 ns is observed below the threshold of stimulated emission. The data for a carrier density of 3×1018 cm−3 give an Auger coefficient of c≂10−28 cm6/s.
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78.47.-p Spectroscopy of solid state dynamics
78.55.Et II-VI semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Variation of the Schottky barrier height of the differently oriented CoGa on GaAs by molecular beam epitaxy

T. C. Kuo, K. L. Wang, and R. Arghavani

Appl. Phys. Lett. 61, 2869 (1992); http://dx.doi.org/10.1063/1.108060 (3 pages) | Cited 4 times

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The Schottky barrier formation of CoGa on (100)n‐GaAs is investigated. CoGa is grown by molecular beam epitaxy and the epitaxial orientation is controlled by the initial growth conditions of the GaAs substrate. Schottky diodes with three different phases of CoGa: (100)CoGa, (110)CoGa, and mixed (100) and (110)CoGa, are fabricated and Schottky barrier heights are measured by I‐V, C‐V, and internal photoemission. The fact that these three types of diodes have different values of barrier height indicates that the mechanisms of the barrier formation for these three phases are different. Finally, the temperature dependence of the Schottky barrier height is also examined and the barrier height is found to be constant from 150 to 300 K for each of the phases.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Selective growth of Si/SiGe resonant tunneling diodes by atmospheric pressure chemical vapor deposition

A. Zaslavsky, D. A. Grützmacher, Y. H. Lee, W. Ziegler, and T. O. Sedgwick

Appl. Phys. Lett. 61, 2872 (1992); http://dx.doi.org/10.1063/1.108061 (3 pages) | Cited 11 times

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Atmospheric pressure chemical vapor deposition is used to grow p‐type Si/Si1−xGex double‐barrier resonant tunneling structures on unstrained substrates, with a Si0.75Ge0.25 well clad by Si barriers. The current‐voltage I(V) characteristics at T=77 and 4.2 K exhibit current peaks and negative differential resistance regions corresponding to resonant tunneling through well‐resolved heavy‐ and light‐hole subbands in the well. Device quality is comparable to Si/SiGe resonant tunneling structures grown by molecular beam epitaxy. The in situ substrate cleaning and selective growth capabilities of atmospheric pressure chemical vapor deposition are used for the first successful selective growth of resonant tunneling structures through an oxide mask. The resulting diodes exhibit good resonant tunneling characteristics. The selective growth process is promising for the fabrication of small vertical heterostructure devices.
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73.40.Gk Tunneling
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Ellipsometric study of silicon surface damage in electron cyclotron resonance plasma etching using CF4 and SF6

M. Haverlag, D. Vender, and G. S. Oehrlein

Appl. Phys. Lett. 61, 2875 (1992); http://dx.doi.org/10.1063/1.108062 (3 pages) | Cited 14 times

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In situ ellipsometry has been used to measure in real time the surface damage introduced during electron cyclotron resonance (ECR) plasma etching of silicon as a function of rf bias to the substrate. CF4 and SF6 plasmas were employed. For all ECR plasma operating conditions, the amount of Si surface damage increases with the rf bias voltage, without an apparent damage threshold. It is shown that the surface damage depends on the ion current to the substrate and the gas, with SF6 plasmas resulting in the least surface damage.
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81.65.-b Surface treatments
61.80.Jh Ion radiation effects

Anomalous multiplication in Hg0.56Cd0.44Te avalanche photodiodes

Y. Liu, S. R. Forrest, R. Loo, G. Tangonan, and H. Yen

Appl. Phys. Lett. 61, 2878 (1992); http://dx.doi.org/10.1063/1.108063 (3 pages) | Cited 2 times

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We quantitatively study the electric field distributions in Hg0.56Cd0.44Te avalanche photodiodes recently reported for use in the 1.6–2.5 μm wavelength region using a two‐dimensional solution of Poisson’s equation. It is found that, contrary to previous reports, there is no evidence for large uniform avalanche gain in these diodes. Furthermore, to first order, it is shown that the ionization rate ratio of electrons to holes in the diodes demonstrated to date is on the order of unity. Hence, it is not expected that the present diodes will lead to low noise operation superior to Ge or In0.53Ga0.47As/InP avalanche photodetectors.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.De Semiconductor-device characterization, design, and modeling
72.20.Ht High-field and nonlinear effects

Atmospheric photoassisted chemical vapor deposition of Si using ultraviolet‐light irradiated H2 carrier gas and nonexcited SiH2Cl2

Motaharul Kabir Mazumder, Yuji Takakuwa, and Nobuo Miyamoto

Appl. Phys. Lett. 61, 2881 (1992); http://dx.doi.org/10.1063/1.108064 (3 pages) | Cited 1 time

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We have proposed a new photoassisted chemical vapor deposition (photo‐CVD) process of Si, in which only a hydrogen carrier gas is excited by UV light from low‐pressure Hg lamps and a reactant gas of SiH2Cl2 is not irradiated at all. In this type of photo‐CVD, it is found that (1) the number of pyramidal hillocks on orientation‐just surfaces is drastically suppressed, (2) the number of etch pits, corresponding to the stacking fault and the precipitation of contaminants, is also decreased, (3) the growth rate is significantly enhanced, and (4) the surface roughness is decreased. In particular it should be emphasized that these effects are more apparent at atmospheric pressure. It is suggested that the UV‐light irradiated hydrogen plays an important role in removing chlorine atoms adsorbed on the surface.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
82.50.-m Photochemistry

Single liquid source plasma‐enhanced metalorganic chemical vapor deposition of high‐quality YBa2Cu3O7−x thin films

Jiming Zhang, Robin A. Gardiner, Peter S. Kirlin, Robert W. Boerstler, and John Steinbeck

Appl. Phys. Lett. 61, 2884 (1992); http://dx.doi.org/10.1063/1.108065 (3 pages) | Cited 36 times

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High‐quality YBa2Cu3O7−x films were grown in situ on LaAlO3 (100) by a novel single liquid source plasma‐enhanced metalorganic chemical vapor deposition (CVD) process. The metalorganic complexes M (thd)n, (thd=2,2,6,6‐tetramethyl‐3‐5‐heptanedionate; M=Y, Ba, Cu) were dissolved in an organic solution and injected into a vaporizer immediately upstream of the reactor inlet. The single liquid source technique dramatically simplifies current CVD processing and can significantly improve the process reproducibility. X‐ray diffraction measurements indicated that single phase, highly c‐axis oriented YBa2Cu3O7−x was formed in situ at a substrate temperature 680 °C. The as‐deposited films exhibited a mirrorlike surface, had transition temperature Tc0≂89 K, ΔTc<1 K, and Jc (77 K)=106 A/cm2.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates

Identification of an interface defect generated by hot electrons in SiO2

J. H. Stathis and D. J. DiMaria

Appl. Phys. Lett. 61, 2887 (1992); http://dx.doi.org/10.1063/1.108066 (3 pages) | Cited 34 times

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Hot electrons in the gate dielectric (SiO2) of field effect transistors create defects at the Si/SiO2 interface. Using electrically detected magnetic resonance, we have identified a major component of these interface defects as the well‐known Pb0 center. We show that the generation rate of the Pb0 centers increases when the oxide field is sufficient to cause electron heating, thus establishing the correlation with hot‐electron generated interface states. Hot‐electron induced defect generation is shown to be fundamentally different from another interface degradation mechanism, electron‐hole recombination near the interface, which produces interface defects but does not produce Pb0 centers.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
71.55.Ht Other nonmetals

Photoelectrochemical etching of high aspect ratio submillimeter waveguide filters from n+ GaAs wafers

R. Khare, E. L. Hu, D. Reynolds, and S. J. Allen

Appl. Phys. Lett. 61, 2890 (1992); http://dx.doi.org/10.1063/1.108039 (3 pages) | Cited 4 times

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A 200 μm high‐pass filter has been fabricated using the photoelectrochemical (PEC) etch process to form a series of waveguides through a Si‐doped n+ GaAs (1×1018 cm−3) substrate. A metal mask on the sample surface with 100 μm square openings and 41 μm spaces was used to locally prevent PEC etching. The sample was etched in a (4:1:50) HCl:HNO3:H2O electrolyte for 1.5 h using an argon ion laser (514 nm) at an intensity of 0.7 W/cm2, and an applied bias of 0.35 V. The result was a series of highly anisotropic waveguides with a (3:1) aspect ratio. The transmittance curve had a cutoff of 45 cm−1 and a transmittance of 20% just above the cutoff.
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81.65.-b Surface treatments
42.79.Ci Filters, zone plates, and polarizers

Wavelength control and residual oxygen in AlGaAs/InGaAs strained quantum‐well heterostructures grown by molecular beam epitaxy

Naresh Chand, E. A. Fitzgerald, and M. Geva

Appl. Phys. Lett. 61, 2893 (1992); http://dx.doi.org/10.1063/1.108040 (3 pages) | Cited 2 times

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We have studied the residual oxygen in AlGaAs/GaAs/InGaAs heterostructures, and the effects of As2 and As4 species and growth temperature (TS) on optical properties of InGaAs quantum wells (QW) for AlGaAs/InGaAs strained QW lasers. In clean growth conditions, the optical properties of InGaAs QWs are insensitive to the As beam used, and the luminescence intensity does not increase with increasing TS from 570 to 630 °C or by postgrowth thermal annealing. Because of the very strong dependence of In sticking coefficient on TS, the TS needs to be precisely controlled to obtain the desired emission wavelength. A solubility limit of ∼8×1017 cm−3 for Be is measured in AlAS at 700 °C growth temperature. The residual oxygen level in undoped and Be‐doped AlxGa1−xAs with x=0.35 was found to be higher by a factor 2 than in x=0.5, 0.6, and 1.0 compositions. In Si‐doped AlxGa1−xAs, the O level is the lowest with no variation with x.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Comparison of light emission from stain‐etch and anodic‐etch silicon films

J. N. Kidder, P. S. Williams, T. P. Pearsall, D. T. Schwartz, and Brett Z. Nosho

Appl. Phys. Lett. 61, 2896 (1992); http://dx.doi.org/10.1063/1.108041 (3 pages) | Cited 8 times

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Bright visible photoluminescence (PL) has been measured in stain‐etch silicon films prepared by chemical etching in a dilute hydrofluoric and nitric acid solution. The PL emission is observed to degrade exponentially when the stain‐etch films are illuminated in air (intensity decreases by 1/e over 22.45 min). Anodic‐etch silicon films, prepared using a novel electrochemical cell, show similar strong visible PL but a degradation rate an order of magnitude smaller. The wavelength of the PL peak for anodic‐etch silicon (650–710 nm) shifts toward the blue with decreasing electrolyte HF concentration while the PL peak position of stain‐etch silicon (∼650 nm) does not vary with process conditions investigated.
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78.55.Hx Other solid inorganic materials
81.65.-b Surface treatments

Smooth, low‐bias plasma etching of InP in microwave Cl2/CH4/H2 mixtures

C. Constantine, C. Barratt, S. J. Pearton, F. Ren, and J. R. Lothian

Appl. Phys. Lett. 61, 2899 (1992); http://dx.doi.org/10.1063/1.108042 (3 pages) | Cited 33 times

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Electron cyclotron resonance microwave (2.45 GHz) discharges of Cl2/CH4/H2 with low additional dc biases (−80 to −150 V) on the sample are shown to provide smooth, anisotropic dry etching of InP at ∼150 °C. Rates of 2500 Å min−1 are obtained at a pressure of 0.5 mTorr and ∼80 V dc bias. SiO2 masks show no discernible erosion under these conditions, yielding a process that is extremely well suited for laser mesa fabrication. The CH4 addition promotes the anisotropy of the etching by a sidewall polymer mechanism, while the H2 addition significantly enhances the etch rate at low pressure.
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81.65.-b Surface treatments

Electrical properties of Sb implanted Si1−xGex alloy layers

Z. Atzmon, M. Eizenberg, Y. Shacham‐Diamand, J. W. Mayer, and F. Schäffler

Appl. Phys. Lett. 61, 2902 (1992); http://dx.doi.org/10.1063/1.108043 (3 pages) | Cited 8 times

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Electrical properties of Sb implanted strained Si1−xGex alloy layers are reported. Two sets of Si1−xGex epilayers with compositions of x=0.08 and 0.18, MBE grown on (100)Si substrates, were implanted at room temperature with Sb+ ions at energies of 200 and 100 keV, respectively, and doses of 1013 and 1015 cm−2. Secondary‐ion mass spectrometry and spreading resistance profiling measurements show that Sb implantation, with a dose below the critical value for amorphization (1013 cm−2), formed a p‐type region upon annealing at 500 °C. Only higher temperature anneals transformed the implanted layer into the expected n‐type doping. Maximal values of electrical activity (45±10%) and mobility were obtained in this case only at temperatures around 800–900 °C. For the high dose implantation (1015 cm−2), it was found that the highest activation efficiency at the implantation profile peak was obtained at 500–600 °C, while at the end‐of‐range region the activation efficiency was very low.
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61.72.uf Ge and Si
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Minority carrier lifetimes in ideal InGaSb/InAs superlattices

C. H. Grein, P. M. Young, and H. Ehrenreich

Appl. Phys. Lett. 61, 2905 (1992); http://dx.doi.org/10.1063/1.108480 (3 pages) | Cited 56 times

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Calculations of band‐to‐band Auger and radiative recombination lifetimes of the recently proposed InxGa1−xSb/InAs superlattices (SL) show them to be promising infrared detectors. Several superlattices with energy gaps in the 5–11 μm range exhibit suppressed p‐type Auger recombination rates due to a large light hole–heavy hole splitting. The p‐type Auger lifetime at 77 K of an 11 μm InxGa1−xSb/InAs SL is found to be, respectively, three and five orders of magnitude longer than those of bulk and superlattice HgCdTe with the same energy gap. The n‐type lifetimes are comparable.
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73.50.Pz Photoconduction and photovoltaic effects
72.40.+w Photoconduction and photovoltaic effects
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Inversion from selective homoepitaxy of Si to selective Si film deposition on SiO2 using an ultraclean electron cyclotron resonance plasma

Takashi Matsuura, Tadahiro Ohmi, Junichi Murota, and Shoichi Ono

Appl. Phys. Lett. 61, 2908 (1992); http://dx.doi.org/10.1063/1.108018 (3 pages) | Cited 3 times

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Plasma enhanced selective deposition of Si has been investigated using an ultraclean electron cyclotron resonance plasma. Selective homoepitaxy of Si without substrate heating has been achieved for the first time by decomposition of SiH4 with a plasma generated from dilute H2 in Ar mixtures. Moreover, the selectivity can be inverted to deposit Si films only on SiO2 through changes in the plasma conditions. Based on the x‐ray photoelectron spectroscopy analysis and experiments investigating growth with and without ion bombardment, it is concluded that competitive contributions of ion induced decomposition of SiH4 and chemical etching with hydrogen radicals play important roles in the selectivity inversion.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Iron acceptor level in ZnTe

B. K. Meyer, P. Omling, H. Linke, B. Salk, and K.‐W. Benz

Appl. Phys. Lett. 61, 2911 (1992); http://dx.doi.org/10.1063/1.108019 (3 pages) | Cited 2 times

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The iron acceptor, FeZn, in as‐grown ZnTe has been investigated by electron‐paramagnetic resonance (EPR) and by photo‐EPR. The photo‐EPR investigation shows that the Fe+ EPR signal is enhanced by optical illumination, and the threshold energy for enhancement, at ≊1.75 eV, suggests that the acceptor level is located at 0.65 eV below the conduction band. The energy dependence of the optical cross‐section for hole ionization, σp0, was determined from an analysis of the time dependent EPR signals. This first determination of the Fe+ acceptor energy level in a II‐VI semiconductor allows us to predict the positions of the acceptor level in other II‐VI materials. In particular, for Cd‐based II‐VI materials it is suggested that the acceptor level of iron is located degenerate with the conduction band.
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71.55.Gs II-VI semiconductors
76.30.Fc Iron group (3d) ions and impurities (Ti-Cu)

Interaction of hydrogen and deuterium with copper in GaAs

G. Hofmann, J. Madok, N. M. Haegel, G. Roos, N. M. Johnson, and E. E. Haller

Appl. Phys. Lett. 61, 2914 (1992); http://dx.doi.org/10.1063/1.108020 (3 pages) | Cited 13 times

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We have investigated hydrogen and deuterium passivation of two copper‐related deep levels at EV+0.13 eV and EV+0.40 eV in GaAs with deep level transient spectroscopy (DLTS). The DLTS signals of the two copper‐related acceptor levels disappear after exposing the samples to a remote hydrogen or deuterium plasma at 300 °C for 1/2 h. Both copper‐related levels can be reactivated by thermal annealing. The copper‐related donor–accepter pair luminescence at 1.36 eV is correlated with the DLTS signal of the copper‐related acceptor level at EV+0.13 eV.
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71.55.Eq III-V semiconductors
81.40.Rs Electrical and magnetic properties related to treatment conditions

Double‐junction amorphous silicon‐based solar cells with 11% stable efficiency

J. Yang and S. Guha

Appl. Phys. Lett. 61, 2917 (1992); http://dx.doi.org/10.1063/1.108021 (3 pages) | Cited 27 times

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The performance of dual‐band gap, double‐junction amorphous silicon alloy‐based solar cells in which the component cells have different degrees of current mismatch has been studied under annealed and light‐soaked conditions. Using a profiled band gap amorphous silicon‐germanium alloy in the bottom cell, a stabilized active‐area efficiency of 11.16% has been achieved.
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84.60.Jt Photoelectric conversion
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
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