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21 Dec 1992

Volume 61, Issue 25, pp. 2953-3062

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Nonlinear optical property of CdTe microcrystallites doped glasses fabricated by laser evaporation method

S. Ohtsuka, T. Koyama, K. Tsunetomo, H. Nagata, and S. Tanaka

Appl. Phys. Lett. 61, 2953 (1992); http://dx.doi.org/10.1063/1.108028 (2 pages) | Cited 31 times

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Samples of CdTe microcrystallites doped glasses were fabricated by a high energy pulsed laser evaporation method. In order to fabricate a CdTe doped glass, synthesis of CdTe microcrystallites and formation of SiO2 films were carried out alternately on a fused silica glass substrate. The absorption edge of the CdTe doped glasses shifted to a higher energy region than that of the bulk CdTe due to the quantum size effect as the particle size of CdTe microcrystallites decreased. The third‐order nonlinear susceptibility of χ(3) was estimated to be 4×10−7 esu at 580 nm using the method of degenerate four wave mixing.  
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
81.05.Pj Glass-based composites, vitroceramics

Correlation between ultraviolet‐induced refractive index change and photoluminescence in Ge‐doped fiber

Yan Duval, Raman Kashyap, Simon Fleming, and François Ouellette

Appl. Phys. Lett. 61, 2955 (1992); http://dx.doi.org/10.1063/1.108029 (3 pages) | Cited 12 times

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The refractive index change arising following the UV exposure of a Ge‐doped fiber was obtained by measuring the change in the far‐field width of the fiber mode in the infrared. Simultaneous measurements showed a gradual decrease in the visible photoluminescence from the fiber which can be directly correlated to the photoinduced index change.
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42.81.Cn Fiber testing and measurement of fiber parameters
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
78.55.Hx Other solid inorganic materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Saturation of 1.064 μm absorption in Cr,Ca:Y3Al5O12 crystals

H. Eilers, K. R. Hoffman, W. M. Dennis, S. M. Jacobsen, and W. M. Yen

Appl. Phys. Lett. 61, 2958 (1992); http://dx.doi.org/10.1063/1.108030 (3 pages) | Cited 60 times

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Saturation absorption experiments are conducted on the title compound at 1.064 μm with laser light propagating along both the [001] and [111] crystallographic axes. Rotation of the crystals about these axes during the experiments reveals that the transmission of the polarized 1.064 μm radiation is highly anisotropic in the saturation regime. The details of the anisotropy and saturation curves are explained using a simple model of subsets of optical centers along with a relevant set of rate equations. The ground and excited‐state absorption cross sections at 1.064 μm are calculated to be σgs=5.7(±2)×10−18 cm2 and σes=8(±2)×10−19 cm2, respectively, and the optimum crystallographic orientation for utilization in optical devices is discussed.
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42.70.Hj Laser materials
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics

Spectral and intensity dependence on dipole localization in Fabry–Perot cavities

Z. Huang, C. Lei, D. G. Deppe, C. C. Lin, C. J. Pinzone, and R. D. Dupuis

Appl. Phys. Lett. 61, 2961 (1992); http://dx.doi.org/10.1063/1.108031 (3 pages) | Cited 5 times

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Data is presented on the characteristics of light emitted from localized dipoles contained in Fabry–Perot cavities. The cavities consist of AlGaAs semiconductor with the dipole localization achieved using GaAs quantum wells. Experimental data shows that the standard assumption of the spectral width of a cavity mode as having some fixed relationship to the photon lifetime in the cavity is an approximation which only becomes valid for dipoles throughout the cavity. Also, intensity differences are measured out either side of a cavity even when symmetrical mirrors are used. The intensity difference depends on the precise dipole position. Both the spectral and intensity differences can be derived from theory using a model which accounts for interference between coherent spontaneous wavepackets emitted in opposite directions from individual emission events.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.50.-p Quantum optics

Four wavelength distributed feedback ridge waveguide quantum‐well heterostructure laser array

L. M. Miller, K. J. Beernink, J. S. Hughes, S. G. Bishop, and J. J. Coleman

Appl. Phys. Lett. 61, 2964 (1992); http://dx.doi.org/10.1063/1.108032 (3 pages) | Cited 4 times

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A four‐wavelength strained‐layer InGaAs‐GaAs‐AlGaAs distributed feedback ridge waveguide quantum‐well heterostructure laser array, with a lasing emission wavelength separation of ∼16 Å between adjacent emitters, is described. The four‐wavelength array requires only a single MOCVD growth step. Lateral optical confinement is achieved with dry‐etched lateral third‐order gratings. Each element operates in the fundamental lateral mode with a near‐field FWHM of 2.6±0.1 μm and the entire width of the near‐field pattern is <80 μm.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

C60 sensitization of a photorefractive polymer

S. M. Silence, C. A. Walsh, J. C. Scott, and W. E. Moerner

Appl. Phys. Lett. 61, 2967 (1992); http://dx.doi.org/10.1063/1.108033 (3 pages) | Cited 42 times

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The fullerene molecule C60 is shown to act as a useful sensitizer of a recently discovered photorefractive polymer. Measurements of the steady‐state diffraction efficiency, grating growth rate, and other photorefractive properties are presented as a function of C60 concentration, writing intensity, and applied electric field. The dc photoconductivity, grating growth rate, and steady‐state diffraction efficiency all increase by as much as a factor of 20 upon doping with up to 0.2 wt % C60. The sensitization appears to result from a small increase in the carrier generation efficiency and a larger increase in the useful optical absorption at the operating wavelength, 647 nm.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.40.Lx Diffraction efficiency, resolution, and other hologram characteristics
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Observation of the dispersion behavior of surface acoustic waves in a wedge waveguide by laser ultrasonics

X. Jia and M. de Billy

Appl. Phys. Lett. 61, 2970 (1992); http://dx.doi.org/10.1063/1.108034 (3 pages) | Cited 16 times

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Wedge (or line) acoustic waves, propagating along the tip of an elastic wedge waveguide, are generated by pulsed YAG laser impact and detected by a wideband optical interferometer. In an ideal infinitely sharp and tall wedge guide, the antisymmetrical flexural (ASF) modes are nondispersive and their energies are mostly confined near the wedge tip. The displacement measurements with the optical probe on metallic wedges show broadband pulsed wave forms of ASF modes. Dispersive behavior of these wave forms, which are not predicted by the theoretical models, are clearly demonstrated. The dispersion curves of the phase velocity are quantitatively deduced by a phase analysis method.
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43.35.Pt Surface waves in solids and liquids
62.65.+k Acoustical properties of solids

Phase transitions of dense systems of charged ‘‘dust’’ grains in plasmas

R. T. Farouki and S. Hamaguchi

Appl. Phys. Lett. 61, 2973 (1992); http://dx.doi.org/10.1063/1.108035 (3 pages) | Cited 55 times

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The behavior of ‘‘dust’’ grains (particulates) in microelectronics process plasmas has been studied using N‐body simulations. Grains are assumed to be negatively charged and interact through a screened Coulomb potential Φ(r). The dimensionless parameters κ=a/λ and Γ=Φ(a)/kBT characterize the thermodynamics of the particulate system, where λ is the ion Debye length, a=(3/4πnD)1/3 is the mean intergrain distance, and nD and T are the dust density and temperature. The simulations exhibit a transition between ‘‘fluid’’ and ‘‘solid’’ phases at a critical value Γc that depends on κ and weakly on the system history (i.e., whether it ‘‘melts’’ from an ordered state or ‘‘freezes’’ from a random one).  
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52.65.-y Plasma simulation
52.25.Vy Impurities in plasmas

Electronic configuration of tantalum in 1T‐LiTaS2

M. Eibschutz, D. W. Murphy, S. Zahurak, and J. V. Waszczak

Appl. Phys. Lett. 61, 2976 (1992); http://dx.doi.org/10.1063/1.108036 (2 pages) | Cited 1 time

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High resolution Mössbauer effect (ME) of the 6.2 keV γ rays of 181Ta has been observed in a lithiated single crystal of 1T‐LiTaS2. The isomer shift of 105.2 mm/s is 35 mm/s larger than that of 2H‐TaS2 and comparable to that of 2H‐LiTaS2. The ME in 1T‐TaS2 is not observable because of the presence of a nearly commensurate charge density wave (CDW). The observation of the ME in 1T‐LiTaS2 shows that the CDW is suppressed and also reflects a change in the electronic configuration from Ta4+ (5d1) toward Ta3+ (5d2). A value of 45 mm/s per e− has been derived for the IS change due to charge transfer from Li to Ta.
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72.80.Ga Transition-metal compounds
71.45.Lr Charge-density-wave systems
76.80.+y Mössbauer effect; other γ-ray spectroscopy

Growth of single crystalline γ‐Al2O3 layers on silicon by metalorganic molecular beam epitaxy

Hirohisa Iizuka, Kuniyoshi Yokoo, and Shoichi Ono

Appl. Phys. Lett. 61, 2978 (1992); http://dx.doi.org/10.1063/1.108037 (3 pages) | Cited 13 times

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Single crystalline γ‐Al2O3 layers have been successfully grown on silicon substrates by the metalorganic molecular beam epitaxy using aluminum alkoxide gas. Single crystalline γ‐Al2O3 layers are grown only on crystalline silicon substrates, while polycrystalline Al2O3 layers are grown on amorphous oxidized silicon surface. By x‐ray photoemission spectroscopy measurements, the stoichiometry of the single crystalline layers were confirmed to be identical to Al2O3 bulk crystals and carbon contamination was not detected within the sensitivity of the measurements.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Crystallization and phase transitions in C60

P. Byszewski, R. Diduszko, E. Kowalska, J. Fink‐Finowicki, and A. Witowski

Appl. Phys. Lett. 61, 2981 (1992); http://dx.doi.org/10.1063/1.108038 (3 pages) | Cited 4 times

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C60 fullerites were condensed from solution using various techniques. The phase transitions were monitored by derivative scanning calorimetry measurements performed in various gases. Two phase transitions were observed in C60 crystals at 245 and 260 K. The low temperature one results from the molecules’ reorientation in the lattice and disappears for poorly crystallized material. The high temperature one is observed in all samples and results from molecules libration. The gas dissolved in C60 crystals strongly influences observed phase transitions.
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61.50.Ks Crystallographic aspects of phase transformations; pressure effects
61.72.Qq Microscopic defects (voids, inclusions, etc.)
81.10.Dn Growth from solutions

Controlled deposition and lateral growth of an ordered monolayer of carbon on Mo(100) observed in situ

Adrian Garcia, Congjun Wang, and Martin E. Kordesch

Appl. Phys. Lett. 61, 2984 (1992); http://dx.doi.org/10.1063/1.108010 (3 pages) | Cited 2 times

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A two‐dimensional ordered carbon monolayer has been deposited on oxygen covered Mo(100) at 1300 K from a 5% methane in hydrogen gas mixture passed over a tungsten filament at 2300 K. The carbon layer grows laterally by occupying surface sites freed by the removal of adsorbed oxygen. A well‐defined growth front is observed with photoemission electron microscopy, as well as a transitional species localized at the carbon‐oxygen growth boundary.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

On the theory of steady‐state electromigration in thin films

C. L. Bauer and W. W. Mullins

Appl. Phys. Lett. 61, 2987 (1992); http://dx.doi.org/10.1063/1.108011 (3 pages) | Cited 9 times

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Steady‐state electromigration along grain boundaries in a monatomic polycrystalline thin film has been analyzed in a two‐dimensional model by balancing the (applied) electric and (induced) stress driving forces to achieve a zero flux divergence. The continuity of chemical potential requires a unique stress normal to each of the three boundaries terminating at a given triple point. These stresses and the steady‐state fluxes are determined by a set of linear equations subject to boundary conditions at the intersection of grain boundaries with the film edge (edge points). When the normal stress is assumed zero at all edge points, the stress typically attains maxima and minima at triple points, whereas, when the flux is assumed zero at all edge points, the stress typically builds up monotonically in the field direction.
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66.30.Qa Electromigration
68.35.Fx Diffusion; interface formation
68.60.Bs Mechanical and acoustical properties

Structure of serpentine superlattice quantum‐wire arrays determined by transmission electron microscopy

Mohan Krishnamurthy, M. S. Miller, and P. M. Petroff

Appl. Phys. Lett. 61, 2990 (1992); http://dx.doi.org/10.1063/1.108012 (3 pages) | Cited 11 times

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The structure of serpentine superlattice (SSL) quantum‐wire arrays is analyzed with transmission electron diffraction and microscopy. The lateral SSL barriers are nominally formed as a digital alloy of (AlAs)r(GaAs)p partial layers in the vertical direction. Micrographs demonstrate the predicted SSL shape and its insensitivity to systematic deposition rate errors. A diffraction pattern is synthesized to explain diffraction features and order‐sensitive SSL images, which are compared with chemical contrast images. The lateral structure is observed to be incompletely segregated into wells and barriers. The length of the quantum wires is estimated to be at least on the order of 100 nm.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.-a Thin film structure and morphology

Passivation of (NH4)2S‐treated GaAs surface with an As2S3 film

Yoichi Mada, Kazumi Wada, and Yoshinori Wada

Appl. Phys. Lett. 61, 2993 (1992); http://dx.doi.org/10.1063/1.108013 (3 pages) | Cited 16 times

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This letter describes the suppression of (NH4)2S‐treated GaAs surface degradation by coating the treated surface with an evaporated As2S3 film. The photoluminescence intensity of the treated GaAs surface shows no decrease even after 100 days. The properties of the As2S3/GaAs interface were also evaluated by metal‐insulator‐semiconductor techniques. A small hysteresis capacitance‐voltage curve with reduced frequency dispersion was obtained, which indicates low interface state density. The passivation of the (NH4)2S‐treated surface by coating with an As2S3 film is very promising for GaAs surface electronic property improvements.
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81.65.-b Surface treatments
73.20.At Surface states, band structure, electron density of states
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Compositional variation and ordering of GaxIn1−xP on GaAs structured substrates

N. Buchan, A. Jakubowicz, R. F. Broom, W. Heuberger, and P. Roentgen

Appl. Phys. Lett. 61, 2996 (1992); http://dx.doi.org/10.1063/1.108014 (3 pages) | Cited 6 times

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Nominally lattice‐matched GaxIn1−xP grown on near‐(001) GaAs substrates containing etched trenches oriented in the [110] and [110] directions have been analyzed by scanning electron microscopy, energy dispersive x‐ray spectrometry, transmission electron microscopy, and cathodoluminescence. The trench walls exhibit a high deposition rate and Ga content, accentuated on walls that are oriented toward {111}A planes. Walls oriented toward {111}B lead to selective atomic ordering on (111) or (111) planes, whereas walls oriented toward {111}A exhibit disorder. We discuss the combined effect of composition and ordering on the band gap.
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68.55.Nq Composition and phase identification
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Microwave oscillation in InAs p‐n junctions

Katsutoshi Kamakura

Appl. Phys. Lett. 61, 2999 (1992); http://dx.doi.org/10.1063/1.108015 (3 pages)

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Continuous coherent microwave oscillation has been observed in InAs p‐n junctions under the application of a dc reverse bias voltage and an external magnetic field in the region of avalanche breakdown at room temperature. The observed oscillation frequency varies with the sample current of the p‐n junction and the magnetic field.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Donor neutralization in GaAs after plasma silicon nitride deposition

K. L. Seaward

Appl. Phys. Lett. 61, 3002 (1992); http://dx.doi.org/10.1063/1.108016 (3 pages) | Cited 10 times

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Loss of conductance has been observed in Si‐doped GaAs after plasma silicon nitride deposition in a 2.45 GHz electron cyclotron resonance reactor and in a 30 kHz parallel‐plate reactor, but not in a 13.56 MHz parallel‐plate reactor. Based on the temperature at which conductance is restored in test structures subjected to a variety of plasmas, observation of atomic hydrogen in the plasmas by optical emission, and secondary ion mass spectrometry measurement of hydrogen in the test structures, the loss of conductance appears to be from formation of the hydrogen‐silicon complex. The extent of neutralization correlates with an abundance of atomic hydrogen in the plasmas and the nitride deposition rate. When the deposition rate is high, the GaAs surface is protected quickly and donor neutralization is minimized.
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71.55.Eq III-V semiconductors
61.72.Bb Theories and models of crystal defects
81.65.-b Surface treatments

Amorphization processes in ion implanted Si: Ion species effects

T. Motooka and O. W. Holland

Appl. Phys. Lett. 61, 3005 (1992); http://dx.doi.org/10.1063/1.108017 (3 pages) | Cited 31 times

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Amorphization processes in Si+, P+, Ge+, and As+ ion implanted Si have been investigated using Raman spectroscopy and Rutherford backscattering spectrometry combined with computer simulations of the initial ion‐beam‐induced damage profiles. The crystal Si Raman peak at 520 cm−1 decreased, broadened, and shifted toward lower wave numbers as the doses were increased from 2 to 8×1014 cm−2 for both 100 keV Si+ and P+, and from 0.6 to 1.8×1014 cm−2 for both 175 keV Ge+ and As+. The maximum peak shifts prior to amorphization were ∼−6 cm−1 in all the samples suggesting that lattice softening is responsible for amorphization in all the ion species cases. The effects of ion species were analyzed by scaling the ion dose using calculated displacements per target atom (DPA). It was found that larger DPA was necessary to obtain the same peak shifts in the Si+ and P+ than in the Ge+ and As+ implantation cases. The results suggest that amorphization is controlled by divacancies generated by ion bombardment.
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61.80.Jh Ion radiation effects
61.72.uf Ge and Si

Evidence for donor‐gallium vacancy pairs in silicon doped GaAs grown by molecular beam epitaxy at low temperatures

S. A. McQuaid, R. C. Newman, M. Missous, and S. O’Hagan

Appl. Phys. Lett. 61, 3008 (1992); http://dx.doi.org/10.1063/1.107993 (3 pages) | Cited 30 times

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Infrared absorption due to localized vibrational modes of silicon impurities in heavily doped GaAs grown by molecular beam epitaxy at low temperatures has been measured. Almost all Si atoms were found to occupy Ga sites. Second neighbor pairs SiGa‐YGa were also detected in a concentration of ∼2×1018 cm−3 and it was deduced that Y was a gallium vacancy (VGa). These results provide the first direct evidence for the presence of a high concentration of gallium vacancies in GaAs grown at low temperatures.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.jd Vacancies
61.72.jj Interstitials
61.72.U- Doping and impurity implantation

Electron‐beam‐assisted dry etching for GaAs using electron cyclotron resonance plasma electron source

Heiji Watanabe and Shinji Matsui

Appl. Phys. Lett. 61, 3011 (1992); http://dx.doi.org/10.1063/1.107994 (3 pages) | Cited 1 time

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Electron‐beam (EB)‐assisted dry etching of GaAs using Ar electron cyclotron resonance (ECR) plasma as an electron shower source is developed to achieve a low energy and high current density electron beam (EB). The rate of EB‐assisted dry etching is more than ten times larger than for Cl2 gas etching.It is confirmed, through photoluminescence measurement, that this etching method causes less damage than ion beam techniques and is very effective for damaged layer removal. Using this technique, a 0.4 μm linewidth low‐damage fine structure of GaAs was fabricated.
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81.65.-b Surface treatments
79.20.Kz Other electron-impact emission phenomena

Time‐dependence of the interface trap build‐up in deuterium‐annealed oxides after irradiation

N. S. Saks and R. W. Rendell

Appl. Phys. Lett. 61, 3014 (1992); http://dx.doi.org/10.1063/1.108479 (3 pages) | Cited 8 times

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The rate of interface trap Nit build‐up after irradiation has been studied in metal‐oxide semiconductor oxides which were annealed in either deuterium or hydrogen. The build‐up rate is found to be substantially retarded in the deuterium‐annealed oxide. This result demonstrates conclusively that the Nit build‐up rate is determined by the rate of H+ (D+) drift through the oxide to the Si‐SiO2 interface.  
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.80.Jh Ion radiation effects

High‐temperature stable MoAl2.7/n‐GaAs Schottky diodes with enhanced barrier height

T. S. Huang, J. G. Peng, and C. C. Lin

Appl. Phys. Lett. 61, 3017 (1992); http://dx.doi.org/10.1063/1.107995 (3 pages) | Cited 8 times

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High‐temperature stable and smooth gate materials are required for self‐aligned GaAs metal‐semiconductor field effect transistor devices processing. Furthermore, the high Schottky barrier is beneficial to the GaAs digital logic circuits based on the enhancement mode field effect transistors. We report the high‐temperature (up to 900 °C) stable MoAl2.7 Schottky contacts to n‐GaAs with enhanced barrier heights from 0.67 to 0.98 V and low values of ideality factors after annealing. The surface of annealed contact is lustrous and smooth. The epitaxial AlxGa1−xAs layer, which induces the enhanced barrier height, at the interface of MoAl2.7/n‐GaAs contact, has been clearly identified by the high‐resolution cross‐sectional transmission electron microscopy.
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73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Hi Surface barrier, boundary, and point contact devices

Femtosecond carrier kinetics in low‐temperature‐grown GaAs

X. Q. Zhou, H. M. van Driel, W. W. Rühle, Z. Gogolak, and K. Ploog

Appl. Phys. Lett. 61, 3020 (1992); http://dx.doi.org/10.1063/1.107996 (3 pages) | Cited 29 times

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The carrier energy distribution and recombination kinetics in low‐temperature‐grown and annealed GaAs (with 1% excess arsenic occurring as microclusters/point defects) have been time resolved at 295 K through luminescence upconversion and correlation spectroscopy using an 80 fs, 720 nm Ti:sapphire laser. We infer that the radiative recombination coefficient is the same in GaAs:As as in normal GaAs and that both electron and hole trapping times are about 1 ps. Luminescence is detected at energies as much as 300 meV below the band gap and is identified with delocalized states induced by excess As. We observe that the presence of excess As gives photoexcited carriers a higher initial temperature than in GaAs. Finally, since the carrier density decays faster than the emitted optical phonons, energy relaxation is inhibited more effectively than in normal GaAs.
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78.47.-p Spectroscopy of solid state dynamics
78.55.Cr III-V semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Optical investigation of the one‐dimensional confinement effects in narrow GaAs/GaAlAs quantum wires

L. Birotheau, A. Izrael, J. Y. Marzin, R. Azoulay, V. Thierry‐Mieg, and F. R. Ladan

Appl. Phys. Lett. 61, 3023 (1992); http://dx.doi.org/10.1063/1.107997 (3 pages) | Cited 22 times

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We show optical data obtained at 8 K on narrow GaAs/GaAlAs quantum wires, with width down to 15 nm, fabricated by reactive ion etching and metal organic chemical vapor deposition overgrowth. Lateral confinement energies (up to 23 meV) and polarization effects are evidenced in the photoluminescence excitation spectra. These experimental results are in good agreement with calculated absorption spectra, which include the effects of wire width fluctuations, yielding, for our fabrication technique, a value of ±5 nm for these size fluctuations.
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78.55.Cr III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
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