We describe a new method for removing thin, large area sheets of diamond from bulk or homoepitaxial diamond crystals. This method consists of an ion implantation step, followed by a selective etching procedure. High energy (4–5 MeV) implantation of carbon or oxygen ions creates a well‐defined layer of damaged diamond that is buried at a controlled depth below the surface. For C implantations, this layer is graphitized by annealing in vacuum, and then etched in either an acid solution, or by heating at 550–600 °C in oxygen. This process successfully lifts off the diamond plate above the graphite layer. For O implantations of a suitable dose (3×1017 cm−2 or greater), the liftoff is achieved by annealing in vacuum or flowing oxygen. In this case, the O required for etching of the graphitic layer is also supplied internally by the implantation. This liftoff method, combined with well‐established homoepitaxial growth processes, has considerable potential for the fabrication of large area single crystalline diamond sheets.