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28 Dec 1992

Volume 61, Issue 26, pp. 3077-3195

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Nonlinear optical properties of quantum‐confined GaAs nanocrystals in Vycor glass

B. L. Justus, R. J. Tonucci, and A. D. Berry

Appl. Phys. Lett. 61, 3151 (1992); http://dx.doi.org/10.1063/1.107991 (3 pages) | Cited 37 times

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Quantum‐confined nanocrystallites of GaAs are fabricated in porous Vycor glass and the bound electronic nonlinear refractive index, the two‐photon absorption coefficient, and the refraction from carriers generated by two‐photon absorption are simultaneously determined using the Z‐scan method and compared to those of bulk GaAs. The measured nonlinear refractive index is an order of magnitude larger than that of bulk GaAs at 1060 nm.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
81.05.Pj Glass-based composites, vitroceramics

Room‐temperature exciton absorption engineering in II‐VI quantum wells

N. T. Pelekanos, H. Haas, N. Magnea, H. Mariette, and A. Wasiela

Appl. Phys. Lett. 61, 3154 (1992); http://dx.doi.org/10.1063/1.107992 (3 pages) | Cited 19 times

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We observe large room‐temperature exciton absorption in the wavelength region around 0.8 μm in CdTe‐based quantum wells. This comes as a result of a room‐temperature exciton engineering concept particularly suitable for II‐VI quantum wells where, by appropriate quantum‐well confinement, the exciton binding energy approaches and exceeds the LO phonon energy. This condition results in a drastic reduction of the exciton‐LO phonon coupling. As a consequence, the temperature‐induced exciton broadening, due to scattering events with LO phonons, is reduced and large excitonic absorption is observed at room temperature.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
71.35.-y Excitons and related phenomena

Optical suppression of ionized impurity scattering in vertical hot‐electron transport

A. K. Geim, S. J. Bending, P. Gueret, and H. P. Meier

Appl. Phys. Lett. 61, 3157 (1992); http://dx.doi.org/10.1063/1.107962 (3 pages)

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A striking effect of illumination on the vertical nonequilibrium electron transport has been observed in the GaAs‐based tunneling hot electron transfer amplifier (THETA). Weak illumination can considerably increase the transparency of a THETA structure for quasiballistic electrons if the photon energy exceeds the GaAs band gap. The temperature and illumination intensity dependencies indicate that the effect is caused by photoneutralization of ionized impurities which are a major source of hot electron scattering.
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72.20.Ht High-field and nonlinear effects
72.20.Dp General theory, scattering mechanisms
72.80.Ey III-V and II-VI semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Graded band gap ohmic contact to p‐ZnSe

Y. Fan, J. Han, L. He, J. Saraie, R. L. Gunshor, M. Hagerott, H. Jeon, A. V. Nurmikko, G. C. Hua, and N. Otsuka

Appl. Phys. Lett. 61, 3160 (1992); http://dx.doi.org/10.1063/1.107945 (3 pages) | Cited 113 times

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We describe a low‐resistance quasi‐ohmic contact to p‐ZnSe which involves the injection of holes from heavily doped ZnTe into ZnSe via a Zn(Se,Te) pseudograded band gap region. The specific contact resistance is measured to be in the range of 2–8×10−3 Ω cm2. The graded heterostructure scheme is incorporated as an efficient injector of holes for laser diode and light emitting diode devices, demonstrating the usefulness of this new contact scheme at actual device current densities.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Oxynitiride gate dielectrics prepared by rapid thermal processing using mixtures of nitrous oxide and oxygen

Yoshio Okada, Philip J. Tobin, Rama I. Hegde, Jimmy Liao, and Peter Rushbrook

Appl. Phys. Lett. 61, 3163 (1992); http://dx.doi.org/10.1063/1.107946 (3 pages) | Cited 21 times

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A rapid thermal oxynitridation process using mixtures of nitrous oxide and oxygen for the fabrication of metal‐oxide‐semiconductor (MOS) capacitors is presented herein. This approach provides excellent control of Si/SiO2 interfacial nitrogen concentration from 0–1 at. % by varying growth temperature and N2O mol %. The dielectric quality of oxynitrides with interfacial nitrogen concentrations of 0.10, 0.22, 0.39 at. % was studied. As‐processed oxynitride capacitors have Dit and fixed charge density as low as oxide capacitors. However, a small nitrogen incorporation at the interface improves Qbd and suppresses interface state generation caused by Fowler–Nordheim (FN) injection.
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81.65.-b Surface treatments
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices

Scanning tunneling microscopy and spectroscopy of Si/SiGe(001) superlattices

E. T. Yu, J.‐M. Halbout, A. R. Powell, and S. S. Iyer

Appl. Phys. Lett. 61, 3166 (1992); http://dx.doi.org/10.1063/1.107947 (3 pages) | Cited 10 times

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Cross‐sectional scanning tunneling microscopy and spectroscopy were used to study a modulation‐doped Si/Si0.76Ge0.24(001) superlattice. Contrast between the Si and Si0.76Ge0.24 layers has been observed in topographic images. Features such as band‐edge discontinuities and band bending arising from doping have been detected in spectroscopic measurements at a series of points across the superlattice structure.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Ordering induced splitting of light‐hole and heavy‐hole bands in GaInP grown by organometallic vapor‐phase epitaxy

G. W. ’t Hooft, C. J. B. Riviere, M. P. C. M. Krijn, C. T. H. F. Liedenbaum, and A. Valster

Appl. Phys. Lett. 61, 3169 (1992); http://dx.doi.org/10.1063/1.107948 (3 pages) | Cited 12 times

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The origin of the polarization of the photoluminescence in ordered InGaP is investigated. The ordering induced lowering of the cubic crystal symmetry is caused by a superlattice and/or strain effects in two of the four 〈111〉 crystal directions resulting in a splitting of the heavy‐hole and light‐hole valence bands. Using simple arguments from k⋅p theory, the difference in photon energy as well as the intensity ratio of the luminescence in the two polarization directions along the cleavage facets is explained as a function of temperature.
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78.55.Cr III-V semiconductors
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Nonlinearity in the excitation yield of ZnS:Mn electroluminescent devices

A. Geoffroy and E. Bringuier

Appl. Phys. Lett. 61, 3172 (1992); http://dx.doi.org/10.1063/1.107949 (3 pages) | Cited 3 times

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Measurements of the excitation yield of ZnS:Mn electroluminescent devices are reported over a Mn concentration range of 0.2,...,1.1 mol %. They show a continuous increase in nonlinearity as the concentration is increased. This is attributed to the field dependence of the hot‐electron impact efficiency and to the dependence of the nonuniform field profile on Mn content. This is directly relevant to the light‐emitting performance of the devices.
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78.60.Fi Electroluminescence
79.20.Kz Other electron-impact emission phenomena
72.20.Ht High-field and nonlinear effects

Ultraviolet photochemical nitridation of GaAs

X.‐Y. Zhu, T. Huett, M. Wolf, and J. M. White

Appl. Phys. Lett. 61, 3175 (1992); http://dx.doi.org/10.1063/1.107950 (3 pages) | Cited 8 times

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Monolayer nitridation of Ga‐rich GaAs(100) is achieved at 100 K by simultaneous exposure to ammonia and 6.4 eV photons in a vacuum environment. This process is a result of nonthermal photodissociation of adsorbed ammonia. Surface NH2 is identified as an important intermediate in nitridation.
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81.65.-b Surface treatments
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light

Off‐axis laser deposition of YBa2Cu3O7−δ thin films

B. Holzapfel, B. Roas, L. Schultz, P. Bauer, and G. Saemann‐Ischenko

Appl. Phys. Lett. 61, 3178 (1992); http://dx.doi.org/10.1063/1.107951 (3 pages) | Cited 119 times

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We report on YBa2Cu3O7−δ thin‐film preparation by a new laser deposition geometry, the so‐called off‐axis laser deposition. Combined with radiation‐based substrate heating, this results in c‐axis oriented, epitaxial YBa2Cu3O7−δ thin films with critical current densities above 106 A/cm2 at 77 K and zero field and an exceptionally good surface quality, with complete absence of the otherwise observed laser droplets. As proved by atomic force microscopy, the surface roughness is <80 Å over an area of at least 10×10 μm2. Using this off‐axis geometry it is possible to coat both sides of a substrate simultaneously, providing a one‐step process in double‐sided thin‐film deposition. Both YBa2Cu3O7−δ films on the substrate show identical superconducting properties.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates

Scaling of critical currents in high‐temperature superconducting superlattices and thin films

A. A. R. Fernandes, I. N. Chan, J. Guimpel, O. Nakamura, D. Lederman, and Ivan K. Schuller

Appl. Phys. Lett. 61, 3181 (1992); http://dx.doi.org/10.1063/1.107952 (3 pages) | Cited 5 times

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We report the measurement of transport critical current densities in a wide variety of high‐temperature superconducting (high Tc) superlattices and thin films. We find that the temperature dependence of the critical current density Jc for all samples may be collapsed into a single curve through the scaling relation Jc(t)=Jc(0)(1−t)1.6, where t=T/Tc(H,Θ). This scaling relation remains valid in fields of up to 5 T and in all field directions Θ with respect to the c axis of the sample with the field kept perpendicular to the current.
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74.78.-w Superconducting films and low-dimensional structures
74.25.Sv Critical currents
74.70.-b Superconducting materials other than cuprates

Thermally activated reversible threshold shifts in YBa2Cu3O7−δ/ yttria‐stabilized zirconia/Si capacitors

Jianmin Qiao, Eric M. Ajimine, Paresh P. Patel, Geoffrey L. Giese, Cary Y. Yang, and D. K. Fork

Appl. Phys. Lett. 61, 3184 (1992); http://dx.doi.org/10.1063/1.107953 (3 pages) | Cited 5 times

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YBa2Cu3O7−δ /yttria‐stabilized zirconia (YSZ)/silicon superconductor–insulator–semiconductor capacitors are characterized with capacitance‐voltage (C‐V) measurements at different gate‐voltage sweep rates and under bias‐temperature cycling. It is shown that ionic conduction in YSZ causes both hysteresis and stretch‐out in room‐temperature C‐V curves. A thermally activated process with an activation energy of about 39 meV in YSZ and/or at YSZ/Si interface is attributed to trapping/detrapping mechanisms in the SiOx interfacial layer between YSZ and Si. The negative mobile ions in YSZ can be moved by an applied electric field at room temperature and then ‘‘frozen’’ with decreasing temperature, giving rise to adjustable threshold voltages at low temperatures.
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85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices
85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Interplay between oscillatory exchange coupling and coercivities in giant magnetoresistive [Ni80Fe20/Cu/Co/Cu] multilayers

T. Valet, J. C. Jacquet, P. Galtier, J. M. Coutellier, L. G. Pereira, R. Morel, D. Lottis, and A. Fert

Appl. Phys. Lett. 61, 3187 (1992); http://dx.doi.org/10.1063/1.107954 (3 pages) | Cited 13 times

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We have observed giant magnetoresistance in [Ni80Fe20/Cu/Co/Cu] multilayers with well‐defined oscillations in magnitude as a function of the Cu layer thickness both at 300 and 4.2 K. The phase and period are found to be very similar to those previously measured in Co/Cu and, more recently, Ni81Fe19/Cu multilayers. However, the existence of a strong contrast in coercive fields between Ni80Fe20 and Co leads to a significant magnetoresistance for Cu layer thicknesses where coupling is zero or even moderately ferromagnetic. At room temperature, resistance changes as large as 7% are observed within a few tens of oersted of zero field.
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75.70.-i Magnetic properties of thin films, surfaces, and interfaces
72.15.Gd Galvanomagnetic and other magnetotransport effects

Magnetic hysteresis in thin film dc SQUID magnetometers

J. Z. Sun, W. J. Gallagher, and R. H. Koch

Appl. Phys. Lett. 61, 3190 (1992); http://dx.doi.org/10.1063/1.107955 (3 pages) | Cited 6 times

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Measurements of the magnetic hysteresis of thin film dc SQUID magnetometers in applied magnetic fields up to 1 mT are reported herein. The hysteresis characteristic for the 77 K YBaCuO high Tc SQUIDS has a similar behavior to that of low Tc Nb thin film SQUIDs operating at 4.2 K. A quadratic dependence on the amplitude of the sweeping field was found in the high field limit.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
FREE

Erratum: ‘‘Linear and nonlinear optical properties of flux‐grown KTiOAsO4’’ [Appl. Phys. Lett. 54, 783 (1989)]

John D. Bierlein, Herman Vanherzeele, and A. A. Ballman

Appl. Phys. Lett. 61, 3193 (1992); http://dx.doi.org/10.1063/1.108503 (1 page) | Cited 1 time

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Abstract Unavailable
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
99.10.Cd Errata
FREE

Erratum: ‘‘High repetition rate picosecond laser system at 1983 nm’’ [Appl. Phys. Lett. 61, 1157 (1992)]

I. V. Tomov, T. Anderson, and P. M. Rentzepis

Appl. Phys. Lett. 61, 3193 (1992); http://dx.doi.org/10.1063/1.108506 (1 page) | Cited 1 time

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The title of this letter was incorrectly printed. The title should read ‘‘High repetition rate picosecond laser system at 193 nm.’’
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42.60.-v Laser optical systems: design and operation
99.10.Cd Errata
FREE

Erratum: ‘‘Picosecond large‐signal switching characteristics of a pseudomorphic AlGaAs/InGaAs modulation‐doped field‐effect transistor’’ [Appl. Phys. Lett. 61, 1187 (1992)]

M. K. Jackson, M. Y. Frankel, J. F. Whitaker, G. A. Mourou, D. Hulin, A. Antonetti, M. Van Hove, W. De Raedt, P. Crozat, and H. Hafdallah

Appl. Phys. Lett. 61, 3194 (1992); http://dx.doi.org/10.1063/1.108504 (1 page)

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Abstract Unavailable
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85.30.Tv Field effect devices
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
99.10.Cd Errata
FREE

Erratum: ‘‘Uniform and flexible 24‐meter superconducting tape of silver‐sheathed Tl0.5Pb0.5Ba0.4Sr1.6Ca2Cu3O8.2’’ [Appl. Phys. Lett. 61, 1715 (1992)]

Z. F. Ren and J. H. Wang

Appl. Phys. Lett. 61, 3194 (1992); http://dx.doi.org/10.1063/1.108507 (1 page)

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Abstract Unavailable
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84.71.Ba Superconducting magnets; magnetic levitation devices
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
74.70.-b Superconducting materials other than cuprates
99.10.Cd Errata
FREE

Erratum: ‘‘Imaging performance of multilayer x‐ray mirrors’’ [Appl. Phys. Lett. 61, 1481 (1992)]

Eberhard Spiller, Janusz Wilczynski, Daniel Stearn, Leon Golub, and George Nystrom

Appl. Phys. Lett. 61, 3195 (1992); http://dx.doi.org/10.1063/1.108505 (1 page) | Cited 2 times

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Abstract Unavailable
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42.79.Bh Lenses, prisms and mirrors
07.85.-m X- and γ-ray instruments
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
99.10.Cd Errata
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