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Applied Physics Letters / Volume 61 / Issue 5

Appl. Phys. Lett. 61, 557 (1992); http://dx.doi.org/10.1063/1.107835 (3 pages)

Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells

K. Muraki1, S. Fukatsu1, Y. Shiraki1, and R. Ito2

1Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4‐6‐1 Komaba, Meguro‐ku, Tokyo 153, Japan
2Department of Applied Physics, Faculty of Engineering, The University of Tokyo, 7‐3‐1 Hongo, Bunkyo‐ku, Tokyo 113, Japan

(Received 24 February 1992; accepted 19 May 1992)

Surface segregation of In atoms during molecular beam epitaxy (MBE) and its influence on the energy levels in InGaAs/GaAs quantum wells (QWs) were systematically studied using secondary‐ion mass spectroscopy (SIMS) and photoluminescence (PL). Strong dependence of In surface segregation on the growth conditions was found; when the growth temperature was raised from 370 to 520 °C, the segregation length was observed to increase from 0.8 up to 2.9 nm, accompanied by an appreciable peak energy shift in the PL spectra of the InGaAs/GaAs QWs. The correlation between In surface segregation and the energy levels in InGaAs/GaAs QWs was clarified for the first time.

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KEYWORDS and PACS

Keywords

INDIUM ARSENIDES, GALLIUM ARSENIDES, TERNARY ALLOYS, QUANTUM WELL STRUCTURES, MOLECULAR BEAM EPITAXY, CRYSTAL STRUCTURE, TEMPERATURE EFFECTS, SIMS, PHOTOLUMINESCENCE, CHEMICAL COMPOSITION, ENERGY LEVELS, MORPHOLOGY

PACS

  • 81.15.Hi

    Molecular, atomic, ion, and chemical beam epitaxy

  • 78.55.Cr

    III-V semiconductors

  • 73.21.-b

    Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.107835

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    J. M. Moison, C. Guille, F. Houzay, F. Barthe, and M. V. Rompay, Phys. Rev. B 40, 6149 (1989).

    J. M. Gerard and J. Y. Martin, Phys. Rev. B 45, 6313 (1992).

    B. Jogai and P. W. Yu, Phys. Rev. B 41, 12 650 (1990), and references therein.

    Since the segregation probability R is assumed to be independent of the number of impinging In atoms for simplicity, the surface In composition can exceed one monolayer when R>1−x0. This might be physically unrealistic, however, this simple model has proven to be successful for reproducing the observed well-width dependence of the PL energy. For detailed models of surface segregation during MBE, see for example W.-X. Ni, J. Knall, M. A. Hasan, G. V. Hansson, J.-E. Sundgren, S. A. Barnett, L. C. Markert, and J. E. Greene, Phys. Rev. B 40, 10 449 (1989).


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