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24 Aug 1992

Volume 61, Issue 8, pp. 877-1005

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Effect on spontaneous emission of quantum well placement in a short vertical cavity

D. L. Huffaker, Z. Huang, C. Lei, D. G. Deppe, C. J. Pinzone, J. G. Neff, and R. D. Dupuis

Appl. Phys. Lett. 61, 877 (1992); http://dx.doi.org/10.1063/1.107775 (3 pages) | Cited 3 times

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Data are presented demonstrating the influence of the precise placement of a GaAs quantum well in a 5 μm long AlGaAs vertical cavity. It is shown that, even for this relatively long cavity, when the emitting dipoles are confined to a region significantly less than the optical wavelength, the quantum well placement influences not only the spectral shape of the emitted light but also the spectrally integrated intensity. Cavity structures are characterized using transmission measurements, spectral emission, and radiation patterns.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.50.-p Quantum optics

Absolute Doppler shift calibration of laser induced fluorescence signals using optogalvanic measurements in a hollow cathode lamp

Wilhelmus M. Ruyten and Dennis Keefer

Appl. Phys. Lett. 61, 880 (1992); http://dx.doi.org/10.1063/1.107776 (3 pages) | Cited 5 times

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We have studied the use of optogalvanic measurements on the neutral 3P1 and 3P2 levels of argon in a hollow cathode lamp for the purpose of calibrating Doppler shifts of laser induced fluorescence signals from an arcjet plume. By using a narrowband, frequency stabilized dye laser, a 5 MHz absolute accuracy was achieved, even using lines with widths in excess of 1 GHz. However, with the laser beam aligned along the axis of the hollow cathode lamp, the optogalvanic signal was shifted 10–35 MHz from line center, due to an apparent drift of neutral atoms along the lamp axis.
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42.62.-b Laser applications
06.30.Gv Velocity, acceleration, and rotation
32.50.+d Fluorescence, phosphorescence (including quenching)
52.70.Kz Optical (ultraviolet, visible, infrared) measurements

Anomalous liquid crystal undershoot effect resulting in a nematic liquid crystal‐based spatial light modulator with one millisecond response time

Keyvan Sayyah, Chiung‐Sheng Wu, Shin‐Tson Wu, and Uzi Efron

Appl. Phys. Lett. 61, 883 (1992); http://dx.doi.org/10.1063/1.107777 (3 pages) | Cited 4 times

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We report here, a single crystal silicon‐based spatial light modulator demonstrating a millisecond response time using a nematic liquid crystal operated in the surface mode configuration. This unexpected fast response time can be explained by a combination of liquid crystal voltage undershoot and the transient nematic effect. The fast response time measured is concurrent with high spatial resolution and gray scale capability which make this device unique in its class.
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42.79.Kr Display devices, liquid-crystal devices
42.79.Hp Optical processors, correlators, and modulators

Passively mode locked femtosecond color center lasers in the erbium gain band

C. E. Soccolich, M. N. Islam, K. Möllmann, W. Gellermann, and K. R. German

Appl. Phys. Lett. 61, 886 (1992); http://dx.doi.org/10.1063/1.107778 (3 pages) | Cited 6 times

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Using semiconductor saturable absorbers, we passively mode lock two color center lasers (CCL) to generate femtosecond pulses at wavelengths within the gain band of erbium‐doped fiber amplifiers. For the first time to our knowledge, we passively mode lock a KCl, FA(Tl) CCL in a single cavity to generate near transform limited Gaussian pulses as short as 315 fs with pulse energies up to 600 pJ. We also extend the tuning range for a NaCl, (F 2+)H CCL to include the 1.5–1.6 μm wavelength range and generate pulses as short as 280 fs by addition of a low‐loss intracavity prism filter and proper crystal preparation. The performance of the two lasers are compared as a function of wavelength.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Fc Modulation, tuning, and mode locking

Cavity formation in semiconductor lasers

J. O’Gorman, A. F. J. Levi, D. Coblentz, T. Tanbun‐Ek, and R. A. Logan

Appl. Phys. Lett. 61, 889 (1992); http://dx.doi.org/10.1063/1.107746 (3 pages) | Cited 3 times

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The temporal development of both lasing light intensity and spectral content is influenced by the number of round‐trips photons make inside a Fabry–Perot laser. A surprisingly large number of cavity round trips (n≳100) are required for laser emission intensity and spectral content to approach dc values. With decreasing n the laser increasingly takes on the character of a light emitting diode.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

High‐power 630–640 nm GaInP/GaAlInP laser diodes

S. S. Ou, J. J. Yang, R. J. Fu, and C. J. Hwang

Appl. Phys. Lett. 61, 892 (1992); http://dx.doi.org/10.1063/1.107747 (3 pages) | Cited 7 times

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High‐power visible laser diodes operating at 630–640 nm have been demonstrated. The devices have a GaInP/GaAlInP single quantum well, graded‐index separate confinement heterojunction. For 100 μm broad stripe uncoated lasers, threshold current densities of 1.06 KA/cm2 and pulsed output powers as high as 1.5 W/facet (total 3 W) at room temperature were achieved by optimizing the device cavity length. By coating rear facets with high‐reflectivity coatings, threshold current densities were reduced to 750 A/cm2, and output powers of 1.95 W were obtained. Unusual differential quantum efficiency versus cavity length characteristics were observed and are attributed to carriers spillover from the spacer/waveguide regions into the cladding layers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Optical properties and ionic conductivity of KTiOAsO4 crystals

G. M. Loiacono, D. N. Loiacono, J. J. Zola, R. A. Stolzenberger, T. McGee, and R. G. Norwood

Appl. Phys. Lett. 61, 895 (1992); http://dx.doi.org/10.1063/1.107748 (3 pages) | Cited 28 times

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Crystals of KTiOAsO4 were grown by the high temperature solution method and their optical and ionic conductivity properties evaluated. The band edge and IR cutoff were 370 and 4850 nm, respectively. A domain structure prevented efficient frequency conversion in as‐grown crystals. The ionic conductivity at 22 °C and 120 kHz was 1.5×10−8, 7.3×10−9, and 1.7×10−6 S/cm for the [100], [010], and [001], respectively. The alleged ferroelectric Curie temperature was 852 ±2 °C.
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78.30.Hv Other nonmetallic inorganics
78.20.Jq Electro-optical effects
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
81.10.Dn Growth from solutions

Quantum wells with localized states at energies above the barrier height: A Fabry–Perot electron filter

Carlo Sirtori, Federico Capasso, Jerome Faist, Deborah L. Sivco, Sung‐Nee G. Chu, and Alfred Y. Cho

Appl. Phys. Lett. 61, 898 (1992); http://dx.doi.org/10.1063/1.107749 (3 pages) | Cited 45 times

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The observation of electronic states localized in a quantum well at energies greater than the barrier height is reported. In our GaInAs wells quantum confinement is achieved at an energy corresponding to a continuum transmission resonance using as barriers high reflectivity AlInAs/GaInAs quarter‐wave stacks. The latter strongly narrow the resonance, thus forming a high finesse Fabry–Perot electron filter. Intersubband infrared absorption measurements at 300 K reveal a strong narrowing of the transition to a localized state above the well as the number of periods in the λ/4 stacks is increased. The narrowest absorption peaks exhibit widths equal to those of bound‐to‐bound state transitions in GaInAs wells with thick AlInAs barriers.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Glow discharge plasma switch controlled by a small magnetic field

J. J. Rocca and K. Floyd

Appl. Phys. Lett. 61, 901 (1992); http://dx.doi.org/10.1063/1.107750 (3 pages) | Cited 3 times

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A cold plasma switch scheme with opening and closing capabilities is reported. An externally applied magnetic field causes a low pressure hollow cathode discharge to transition from a low impedance mode sustained by oscillating beam electrons into a virtually collisionless high impedance mode. The impedance of a 10 A discharge was demonstrated to increase by 20 with the application of a field of 0.018 T.
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52.75.Kq Plasma switches (e.g., spark gaps)
52.80.Hc Glow; corona
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Nonspecular x‐ray scattering from the amorphous state in W/C multilayers

Xiaoming Jiang, T. H. Metzger, and J. Peisl

Appl. Phys. Lett. 61, 904 (1992); http://dx.doi.org/10.1063/1.107723 (3 pages) | Cited 17 times

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The nonspecular x‐ray scattering distribution from an amorphous W/C multilayer structure has been examined close to low order Bragg reflections. The scattering distribution is explained as coherent atomic scattering from amorphous W and C layers having a periodicity in growth direction. This layer periodicity results in scattering intensity streaks in reciprocal space perpendicular to the one‐dimensional order. In addition, sharp intensity modulations appear, whenever the incident or exit angle equals the first order Bragg angle of the multilayer. They can be understood in terms of a dynamical interaction between the x‐ray standing wave and the atomic scattering in the layers.
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61.05.C- X-ray diffraction and scattering
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Photoacoustic studies of interaction of O2 with Cu2O thin films

M. E. Abu‐Zeid, Y. A. Yousef, and H. A. Kordia

Appl. Phys. Lett. 61, 907 (1992); http://dx.doi.org/10.1063/1.107724 (3 pages) | Cited 1 time

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Photoacoustic spectroscopy was used, for the first time, for the determination of the thickness of CuO impurity layer developed over the surface of Cu2O thin films during their electrodeposition processes. The thickness of the CuO protective layer over the surface of Cu2O thin films when the latter were heated in oxygen was also determined.
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68.35.Dv Composition, segregation; defects and impurities
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments

Composition change of SiCx (x=1–2) films due to variation of film precursors in the Si2H6/C2H2 chemical vapor deposition reaction system

Lu‐Sheng Hong, Yukihiro Shimogaki, Yasuyuki Egashira, and Hiroshi Komiyama

Appl. Phys. Lett. 61, 910 (1992); http://dx.doi.org/10.1063/1.107725 (3 pages) | Cited 5 times

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Silicon carbide (SiC) films have been deposited on a silicon substrate by the chemical vapor deposition method using the Si2H6 and C2H2 gas system. The carbon content in the films was dependent on the volume‐to‐surface ratio (V/S) of the reactor. Study of the film formation mechanism indicated that the change in film composition was caused by V/S‐dependent contributions of three film precursors. Films formed by surface reaction of Si2H6 gave a composition of SiC2, while films formed by gaseous species, most plausibly, SiH2 and SiH3C≡CH, showed a stoichiometric composition of SiC.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Nq Composition and phase identification

Epitaxial growth of (001) Al on (111) Si by vapor deposition

N. Thangaraj, K. H. Westmacott, and U. Dahmen

Appl. Phys. Lett. 61, 913 (1992); http://dx.doi.org/10.1063/1.107726 (3 pages) | Cited 14 times

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Heteroepitaxial growth of (001) Al thin films on Si (111) single crystal substrates by vapor deposition was studied by means of x‐ray diffraction, Rutherford backscattering spectrometry, and transmission electron microscopy techniques. It was observed that the films deposited at room temperature exhibit random (111) texture, while the films deposited at 280 °C show perfect epitaxial alignment of (001) Al planes with (111) Si planes. In the interface plane 〈110〉 close packed directions in both the film and the substrate are parallel and hence Al grows with three orientation variants in a unique mazed tricrystal arrangement.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)

Modulated thermoreflectance imaging of hidden electric current distributions in thin‐film layered structures

E. Welsch, M. Reichling, C. Göbel, D. Schäfer, and E. Matthias

Appl. Phys. Lett. 61, 916 (1992); http://dx.doi.org/10.1063/1.107727 (3 pages) | Cited 5 times

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Thermal imaging of hidden electric current distributions with a resolution of several ten micrometers is demonstrated. It is shown that the thermoreflectance technique is capable of monitoring current‐induced temperature variations on as well as beneath the surface of thin layered structures. A temperature pattern was generated by Joule heating using an ac current in a 2.5 μm thick structured gold film that was evaporated on a glass substrate and covered by a TiOx layer. The current density distribution in the gold film is revealed by the measured photothermal pattern, provided that both laser beam diameter and thermal diffusion length are smaller than the desired lateral resolution.
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78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
42.30.-d Imaging and optical processing
07.60.Hv Refractometers and reflectometers
68.55.-a Thin film structure and morphology

Direct experimental observation of interactive third and fifth order nonlinearities in a time‐ and space‐resolved four‐wave mixing experiment

Song Wu, X.‐C. Zhang, and R. L. Fork

Appl. Phys. Lett. 61, 919 (1992); http://dx.doi.org/10.1063/1.107728 (3 pages) | Cited 11 times

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We have used the mechanism of Kerr lens deflection to spatially separate third and fifth order polarizations in the momentum degenerate 2k2−k1 direction for a time‐resolved two pulse four‐wave mixing experiment. In the far field spatially asymmetrical signals provide direct evidence of destructive interference between third and fifth order nonlinear processes. The experimental results also indicate a carrier density greater than 1016/cm3 is necessary to demonstrate exciton‐exciton interaction at room temperature in GaAs bulk materials.
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78.47.-p Spectroscopy of solid state dynamics
78.20.-e Optical properties of bulk materials and thin films
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Metamorphic In0.3Ga0.7As/In0.29Al0.71As layer on GaAs: A new structure for high performance high electron mobility transistor realization

P. Win, Y. Druelle, A. Cappy, Y. Cordier, J. Favre, and C. Bouillet

Appl. Phys. Lett. 61, 922 (1992); http://dx.doi.org/10.1063/1.107729 (3 pages) | Cited 21 times

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A new high electron mobility transistor (HEMT) using InAlAs/InGaAs grown on GaAs has been successfully realized. This structure, with an In content close to 30%, presents several advantages over conventional pseudomorphic HEMT on GaAs and lattice matched HEMT on InP. To accommodate the mismatch between the active layer and the GaAs substrate, a metamorphic buffer has been grown. High electron mobility with high two‐dimensional electron gas density (20 700 cm2/V s with 4×1012 cm−2) and high Schottky barrier quality (Vb=0.68 V with η=1.1) have been obtained. A 3 μm gate length device has shown intrinsic transconductance as high as 530 mS/mm.
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85.30.Tv Field effect devices
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Construction of silicon nanocolumns with the scanning tunneling microscope

R. M. Ostrom, D. M. Tanenbaum, and Alan Gallagher

Appl. Phys. Lett. 61, 925 (1992); http://dx.doi.org/10.1063/1.107730 (3 pages) | Cited 14 times

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Voltage pulses to a scanning tunneling microscope (STM) are used to construct silicon columns of 30–100 Å diameter and up to 200 Å height on a silicon surface and on the end of a tungsten probe. These nanocolumns have excellent conductivity and longevity, and they provide an exceptional new ability to measure the shapes of nanostructures with a STM. This construction methodology and these slender yet robust columns provide a basis for nanoscale physics, lithography, and technology.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Elimination of the kink effect in GaAs metal semiconductor field‐effect transistors by utilizing a low‐temperature‐grown buffer layer

Junzi Haruyama, Norio Goto, and Hitoshi Negishi

Appl. Phys. Lett. 61, 928 (1992); http://dx.doi.org/10.1063/1.107731 (3 pages) | Cited 10 times

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GaAs metal semiconductor field‐effect‐transistors (MESFETs) utilizing a nondoped GaAs buffer layer grown by molecular beam epitaxy at 300 °C do not show the kink effect which is observed in GaAs MESFETs utilizing a nondoped GaAs buffer layer grown at 600 °C. However, in both types of FETs, almost the same photoemissions caused by drain avalanche multiplication, are observed between the gate and the drain. A deep level transient spectroscopy (DLTS) spectrum shows that the low‐temperature buffer (LTB) layer contains a deep level similar to the EL‐2 level with high density. The kink effect may be eliminated because the deep level works as a large recombination center for holes generated by drain avalanche multiplication.
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85.30.Tv Field effect devices
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.-a Thin film structure and morphology

Transient recovery of minority‐carrier lifetime in silicon after ultraviolet irradiation

L. Zhong, A. Buczkowski, K. Katayama, and F. Shimura

Appl. Phys. Lett. 61, 931 (1992); http://dx.doi.org/10.1063/1.107732 (3 pages) | Cited 15 times

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A recovery process of minority‐carrier recombination lifetime after ultraviolet (UV) irradiation has been investigated with a laser‐microwave photoconductance technique for silicon wafers with native oxide. It is found that the effective lifetime which greatly increases after UV irradiation recovers to the initial value primarily with an exponential law characterized by a specific time constant called recovery time. The recovery time depends on experimental conditions where, for example, an accumulation effect of UV irradiation is observed. A mechanism of the effective lifetime recovery process is correlated mainly with the behavior of slow states associated with the silicon/native oxide interface.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.40.Ty Semiconductor-insulator-semiconductor structures
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Charge injection frequency multiplier

Piotr M. Mensz, Deborah L. Sivco, and Alfred Y. Cho

Appl. Phys. Lett. 61, 934 (1992); http://dx.doi.org/10.1063/1.107733 (3 pages) | Cited 1 time

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We propose a novel frequency doubler, implemented in three terminal semiconductor heterostructures. This device represents a natural embodiment of the symmetry of hot‐electron injection with respect to the polarity of the heating voltage. An efficient frequency doubling, comprising conversion gain with low harmonic distortion of the output signal was demonstrated using InGaAs/InAlGaAs/InGaAs charge injection transistor devices. A natural extension of this idea is the implementation of a higher order frequency multiplier and a frequency mixer.
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85.30.De Semiconductor-device characterization, design, and modeling
72.20.Ht High-field and nonlinear effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Fluorine‐enhanced oxidation of polycrystalline silicon and application to thin‐film transistor fabrication

Dimitrios N. Kouvatsos, Miltiadis K. Hatalis, and Ralph J. Jaccodine

Appl. Phys. Lett. 61, 937 (1992); http://dx.doi.org/10.1063/1.107734 (3 pages) | Cited 5 times

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The kinetics of the fluorinated oxidation of polycrystalline silicon thin films has been investigated and compared to the (100) single‐crystal silicon case. The growth of silicon dioxide was performed at oxidation temperatures down to 650 °C in dry ambients, which was made possible by fluorine‐induced oxidation enhancement; growth rates in the presence of fluorine additions approach those of wet oxidation. Silicon dioxide films grown on polycrystalline silicon were found to be thicker by about 10%–20% compared to films grown on (100) single‐crystal silicon oxidized under the same conditions. The application of fluorinated gate oxides in the fabrication of n‐channel polycrystalline silicon thin‐film transistors was found to improve the effective electron mobility.
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81.65.-b Surface treatments
85.40.Hp Lithography, masks and pattern transfer

Effects of thermal annealing on porous silicon photoluminescence dynamics

Norio Ookubo, Haruhiko Ono, Yukinori Ochiai, Yasunori Mochizuki, and Shinji Matsui

Appl. Phys. Lett. 61, 940 (1992); http://dx.doi.org/10.1063/1.107735 (3 pages) | Cited 79 times

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Photoluminescence (PL) spectra and decay dynamics were studied for the spontaneously oxidized porous Si with subsequent various thermal annealing procedures. The PL decay was highly nonexponential and well described by the stretched‐exponential function. The PL lifetime was shorter for the higher PL photon energy, but at the same photon energy it decreased by an order of magnitude by the thermal annealing in N2 gas, in parallel with the large PL intensity decrease. This PL quenching upon the annealing is presumably ascribable to both the structural changes and dangling bond formations in porous Si, as suggested by ESR measurements and the annealing experiments in H2 gas.
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78.55.Hx Other solid inorganic materials
81.40.Tv Optical and dielectric properties related to treatment conditions

Rapid‐thermal‐oxidized porous Si−The superior photoluminescent Si

V. Petrova‐Koch, T. Muschik, A. Kux, B. K. Meyer, F. Koch, and V. Lehmann

Appl. Phys. Lett. 61, 943 (1992); http://dx.doi.org/10.1063/1.107736 (3 pages) | Cited 268 times

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To improve the stability of porous Si (PS) prepared by electrochemical etching, we make use of rapid‐thermal oxidation (RTO). During RTO processing, the hydride coverage of the internal surfaces of the pores is replaced by a high‐quality oxide while retaining nm‐sized Si grains. With increasing process temperature Tox the luminescence is first quenched. It is recovered with comparable intensity for Tox≥700 °C.
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78.55.Hx Other solid inorganic materials
81.40.Tv Optical and dielectric properties related to treatment conditions

Radiative recombination in GaAs‐AlxGa1−xAs quantum dots

P. D. Wang, C. M. Sotomayor Torres, H. Benisty, C. Weisbuch, and S. P. Beaumont

Appl. Phys. Lett. 61, 946 (1992); http://dx.doi.org/10.1063/1.107737 (3 pages) | Cited 23 times

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We present experimental and theoretical results on the low‐temperature luminescence intensity of dry‐etched GaAs‐AlxGa1−xAs quantum dots. The luminescence intensity was found to decrease by two orders of magnitude with the decrease of dot sizes from 1 μm to 60 nm. Our intrinsic model of the emission yield invokes slower momentum and energy relaxation mechanisms as the lateral dimensions decrease. The additional extrinsic effect considered involves carrier diffusion with a surface nonradiative recombination velocity. Combining intrinsic and extrinsic effects and using a surface recombination velocity of ∼105 cm/s for GaAs, we can obtain a good fit to the data.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors

Experimental evidence of Bragg confinement of carriers in a quantum barrier

M. Zahler, I. Brener, G. Lenz, J. Salzman, E. Cohen, and L. Pfeiffer

Appl. Phys. Lett. 61, 949 (1992); http://dx.doi.org/10.1063/1.107738 (3 pages) | Cited 31 times

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We report the low‐temperature photoluminescence and its excitation spectra of GaAs/Al0.32Ga0.68As Bragg confining structures. The spectra of these structures, which consist of short superlattice sections separated by Al0.32Ga0.68As spacer layers, are compared with those of conventional superlattices. The energies of the observed optical transitions between the Bragg confined levels (localization on the spacer layer) are in a good agreement with calculations, based on the Kronig–Penney model for the envelope functions of the electrons and holes.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors
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