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19 Apr 1993

Volume 62, Issue 16, pp. 1857-1992

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InTlSb: An infrared detector material?

Mark van Schilfgaarde, Arden Sher, and An‐Ban Chen

Appl. Phys. Lett. 62, 1857 (1993); http://dx.doi.org/10.1063/1.109523 (3 pages) | Cited 20 times

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In1−xTlxSb is proposed as promising infrared material. A number of optical and structural properties are studied within local density‐functional theory. The alloy at x=0.09 is estimated to have a gap of 0.1 eV. Although TlSb is found to favor the CsCl structure, the zinc blende alloy is stable for low x values. A phase diagram is calculated to estimate the regions of stable phases and explore the conditions for growing narrow‐gap In1−xTlxSb alloys.
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61.66.Dk Alloys
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
78.30.Fs III-V and II-VI semiconductors
81.30.Dz Phase diagrams of other materials

Fabrication of periodic domain inversion in an x‐cut LiTaO3

Kiminori Mizuuchi, Kazuhisa Yamamoto, and Hisanao Sato

Appl. Phys. Lett. 62, 1860 (1993); http://dx.doi.org/10.1063/1.109524 (3 pages) | Cited 22 times

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We report on the fabrication of periodic domain inversion on the x face of LiTaO3 by selective proton exchange and quick heat treatment. Observation of domain formation in –c‐cut LiTaO3 indicates an inside field model where electric field caused by proton diffusion reverses the orientation of domains. Based on this model, it has been found that an effective inside field to form domain inversion is also induced in x‐cut LiTaO3 by using selective proton exchange. Accordingly, periodic domain inversion at 10 μm intervals has been successfully formed on the x face of LiTaO3.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
77.80.Dj Domain structure; hysteresis
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Nonlinear optical susceptibility of ultrasmall CdS particles by means of the polarization‐discriminated forward degenerate four‐wave mixing in a resonant region

Yoshio Nosaka, Kazunori Tanaka, and Nobuyuki Fujii

Appl. Phys. Lett. 62, 1863 (1993); http://dx.doi.org/10.1063/1.109525 (3 pages) | Cited 3 times

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We report results of degenerate four‐wave mixing (DFWM) measurements of resonant nonlinearity for ultrasmall CdS particles having diameters of 26–39 Å. The values of χxyyx(3) obtained by means of forward DFWM operating under polarization‐discriminated conditions are the same order of magnitude as the reported χ(3) at a nonresonant wavelength.  
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Broadband optical parametric amplification in LiB3O5

Hongwei Mao, Baichang Wu, Chuangtin Chen, Daiqin Zhang, and Peilin Wang

Appl. Phys. Lett. 62, 1866 (1993); http://dx.doi.org/10.1063/1.109526 (3 pages) | Cited 6 times

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The study on broadband infrared parametric amplification in a lithium triborate (LBO) crystal is reported. By using optical parametric amplification in LBO, the picosecond (ps) infrared (IR) laser pulse with a bandwidth of 165 nm has been generated. The energy of broadband laser pulse train is 9.4 μJ, and the pulse duration is 20 ps.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

980 nm ridge waveguide laser reliability at 100 mW

L. S. Heath, K. Meehan, A. K. Chin, P. Gavrilovic, J. H. Zarrabi, M. Wober, and J. E. Bisberg

Appl. Phys. Lett. 62, 1869 (1993); http://dx.doi.org/10.1063/1.109527 (3 pages)

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Reliable, single‐mode, 100 mW operation of strained‐layer InGaAs single quantum well ridge waveguide lasers is demonstrated. The mean time to failure of coated, 5 μm wide lasers aged at constant current is over 100 000 h at 25 °C. Peak output power is 300 mW per facet, limited by thermal effects. The lasing wavelength is 980 nm. Preliminary results of pumping an erbium‐doped fiber laser are reported.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Simultaneous generation of UV and visible light in segmented KTP waveguides

F. Laurell, J. B. Brown, and J. D. Bierlein

Appl. Phys. Lett. 62, 1872 (1993); http://dx.doi.org/10.1063/1.109528 (3 pages) | Cited 8 times

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We report on simultaneous generation of ultraviolet, blue, and green radiation in segmented KTP waveguides using two infrared input frequencies and combinations of second‐harmonic and sum‐frequency generation.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.79.Gn Optical waveguides and couplers

Novel cross‐correlation technique for characterization of subpicosecond pulses from mode‐locked semiconductor lasers

Kyoo Nam Choi and Henry F. Taylor

Appl. Phys. Lett. 62, 1875 (1993); http://dx.doi.org/10.1063/1.109529 (3 pages) | Cited 1 time

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A diagnostic technique for repetitively pulsed lasers which is simple in application but provides subpicosecond temporal resolution is described. The method uses cross‐correlation in a scanned Michelson interferometer, the electrical output of which is produced by a low‐speed photodiode and a lock‐in amplifier. A measurement on an actively mode‐locked semiconductor laser emitting near a wavelength of 0.845 μm indicated a pulse width of 258±44 fs and a phase memory time for pulses in a train of 1.47 ns.
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42.60.Fc Modulation, tuning, and mode locking
07.60.Ly Interferometers

Argon and hydrogen plasma interactions on diamond (111) surfaces: Electronic states and structure

J. van der Weide and R. J. Nemanich

Appl. Phys. Lett. 62, 1878 (1993); http://dx.doi.org/10.1063/1.109639 (3 pages) | Cited 95 times

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Photoemission spectroscopy was used to compare the effects of a hydrogen or argon plasma on natural‐type 2B diamond (111) surfaces, while the diamond was heated to 350 °C. After the hydrogen plasma the surface exhibits a negative electron affinity, indicative of a hydrogen‐terminated surface. In contrast, the argon plasma was found to result in a surface with a positive electron affinity of 1.0 eV, indicating the removal of hydrogen from the surface. Features characteristic of graphite were not observed. After reexposing the surface to a hydrogen plasma, the spectrum was identical to the spectrum obtained after the initial hydrogen plasma.
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73.20.At Surface states, band structure, electron density of states
81.65.-b Surface treatments
68.43.-h Chemisorption/physisorption: adsorbates on surfaces

Growth and characterization of buckybundles

X. K. Wang, X. W. Lin, V. P. Dravid, J. B. Ketterson, and R. P. H. Chang

Appl. Phys. Lett. 62, 1881 (1993); http://dx.doi.org/10.1063/1.109530 (3 pages) | Cited 35 times

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Buckybundles (bundles of buckytubes), approximately 50 μm in diameter and 1 cm in length, have been observed in a deposited carbon rod on the cathode electrode of a dc arc. Scanning electron microscopy images clearly show an evenly spaced array of parallel buckybundles. High resolution electron microscopy reveals that each buckybundle consists of closely packed buckytubes with their axes parallel to the bundle axis. Within each bundle it is estimated that there are about 107 buckytubes with diameters in the range (20–300 Å). We have measured the deposited rod growth rate as a function of the He gas pressure and have evaluated the influence of the graphite feed rod diameter on the yield of buckybundles. The magnetic susceptibilities parallel and perpendicular to the bundle axes were measured. The results show that the bundles have anisotropic diamagnetic properties.
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61.46.-w Structure of nanoscale materials
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
75.20.Ck Nonmetals

Secondary ion mass spectrometry of InGaAs/InP (100) multiple layers grown by chemical beam epitaxy

M. D. Williams, T. H. Chiu, F. G. Storz, S. C. Shunk, and J. F. Ferguson

Appl. Phys. Lett. 62, 1884 (1993); http://dx.doi.org/10.1063/1.109531 (3 pages)

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Secondary ion mass spectrometry was used to study the effect of substrate temperature on the composition and growth rate of InGaAs/InP multilayers grown by chemical beam epitaxy. The dependence on the As overpressure was also studied for the first time by this technique. The substrate temperature effects that we observed are in good agreement with published results from x‐ray diffraction and Auger electron spectroscopy studies. The Ga/In ratio was observed to decrease with increasing arsine flow rate in contradiction to previously reported results.
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68.55.-a Thin film structure and morphology

Influence of the stoichiometry in the site distribution of Cr3+ ions in LiNbO3

B. Macalik, L. E. Bausá, J. García Solé, and F. Jaque

Appl. Phys. Lett. 62, 1887 (1993); http://dx.doi.org/10.1063/1.109532 (2 pages) | Cited 5 times

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In this letter the influence of the stoichiometry ([Li]/[Nb] ratio) on the R absorption lines of Cr3+ in LiNbO3 has been investigated. It is shown that Cr3+ ions occupy the Li+ and Nb5+ lattice sites but their relative distribution is modified by changing the melt composition ([Li]/[Nb] ratio). It has been also concluded that the defects associated to the nonstoichiometry (antisites and Nb vacancies) of the crystal host are responsible for the incorporation of Cr3+ ions into the LiNbO3 matrix.
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61.72.up Other materials
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Scanning tunneling microscopy of the electronic structure of chemical vapor deposited diamond films

J. M. Perez, C. Lin, W. Rivera, R. C. Hyer, M. Green, S. C. Sharma, D. R. Chopra, and A. R. Chourasia

Appl. Phys. Lett. 62, 1889 (1993); http://dx.doi.org/10.1063/1.109533 (3 pages) | Cited 8 times

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Scanning tunneling microscopy has been used to characterize the electronic structure and surface morphology of diamond films grown using the hot filament and microwave plasma chemical vapor deposition techniques. We observe a significant difference between the current‐voltage (I‐V) curves for the two types of films. The I‐V curves for the hot‐filament grown films are characterized by a well‐defined zero‐current region from which a surface band gap of 4.1 eV is measured. The I‐V curves for the microwave plasma grown films exhibit a rectifying behavior which can be modeled by surface band bending. We compare the surface density of states obtained from the I‐V curves with those obtained from x‐ray photoelectron and appearance potential spectroscopies.
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73.20.At Surface states, band structure, electron density of states
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Observation of thin film of one‐dimensional organic conductor tetrathiofulvalene tetracyanoquinodimethane by means of atomic force microscopy

Ken Nakajima, Masami Kageshima, Norihiko Ara, Masamichi Yoshimura, and Akira Kawazu

Appl. Phys. Lett. 62, 1892 (1993); http://dx.doi.org/10.1063/1.109534 (3 pages) | Cited 13 times

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Thin films of the charge transfer complex of tetrathiofulvalene tetracyanoquinodimethane (TTF‐TCNQ) deposited on KC1 and KBr were studied by atomic force microscopy (AFM). Structures corresponding to the molecular arrangement of the crystallographic ab‐plane were observed in the molecular‐scale AFM images. Large‐scale imaging (15×15 μm) revealed that the films consist of rectangular islands whose longer sides (corresponding to the highly conductive b‐axis) orient in the [110] or [110] direction of the KC1 and KBr(001) surfaces. A small number of islands rotated 32° from the [110] direction were also observed on the KBr substrate. The arrangement of these islands can be explained by considering the adsorption of a TCNQ molecule to the metastable state.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology

Size effects in the epitaxial realignment of polycrystalline silicon films onto Si substrates

F. Benyaïch, E. Rimini, C. Spinella, A. Cacciato, G. Fallico, G. Ferla, and P. Ward

Appl. Phys. Lett. 62, 1895 (1993); http://dx.doi.org/10.1063/1.109535 (3 pages)

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The epitaxial realignment of As‐doped polycrystalline silicon layers has been investigated by varying the dimensions of the contact area with the crystalline silicon substrate. Rectangular strips of width in the 0.2–100 μm range and length in the mm range were used. In the 1–100 μm strips the realignment proceeds by the two‐dimensional growth of epitaxial columns, while in the 0.2–0.3 μm strips by the one‐dimensional growth. The experimental realigned fractions quantitatively follow the trend predicted by the classical model of nucleation and growth in two and one dimension, respectively. The growth kinetics is slowed down in the small width geometry and the thermal budget to realign the films increases.
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68.60.Dv Thermal stability; thermal effects
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Geometrical interpretation of x‐ray diffraction patterns of strained‐layer superlattice structures

P. van der Sluis

Appl. Phys. Lett. 62, 1898 (1993); http://dx.doi.org/10.1063/1.109536 (3 pages) | Cited 3 times

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We have derived a new relation that can be used to index the superlattice satellite peaks in an x‐ray diffraction scan. At the same time accurate data on the strain in the superlattice and the periodicity of the superlattice are obtained. The new method has been applied to an InGaAs/InP superlattice and is compared with an existing method for the indexing of the superlattice peaks. For both methods, it is best to use only lattice planes that are parallel to the surface, because these rocking curves can be measured more easily, faster, more accurately and by fully automated means. In addition, only these rocking curves can be used for analysis of period variation or interface roughness.
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61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Modulation of a semicondutor‐to‐semimetal transition at 7 THz via coherent lattice vibrations

T. K. Cheng, L. H. Acioli, J. Vidal, H. J. Zeiger, G. Dresselhaus, M. S. Dresselhaus, and E. P. Ippen

Appl. Phys. Lett. 62, 1901 (1993); http://dx.doi.org/10.1063/1.109537 (3 pages) | Cited 31 times

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This letter introduces the general notion of significantly modulating the physical characteristics of a solid on a terahertz time scale with coherent lattice vibrations. We show, as an example, experiments in which coherent phonons are optically excited in single‐crystal Ti2O3, which is a narrow‐gap semiconductor at 300 K and gradually transforms into a semimetal at 600 K. Quantitative comparison of previous equilibrium measurements to our new transient measurements suggests that the induced coherent lattice vibration is significantly modulating the semiconductor‐to‐semimetal transition at 7 THz.
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63.20.D- Phonon states and bands, normal modes, and phonon dispersion
78.47.-p Spectroscopy of solid state dynamics

Photoluminescence study of anodized porous Si after HF vapor phase etching

S. Shih, K. H. Jung, D. L. Kwong, M. Kovar, and J. M. White

Appl. Phys. Lett. 62, 1904 (1993); http://dx.doi.org/10.1063/1.109538 (3 pages) | Cited 7 times

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We have studied the mechanism of photoluminescence (PL) shift by hydrofluoric (HF) vapor phase etching in oxygen ambient. Vapor phase etching offers greater efficiency and flexibility, along with reduced damage and contamination for luminescence studies of porous Si. An initial blue shift followed by a red shift was observed in most cases. Transmission Fourier‐transform infrared spectroscopy showed identical bonding environment before and after vapor phase etching, suggesting that the role of surface passivation is irrelevant to the observed PL shift.
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78.55.Hx Other solid inorganic materials
81.65.-b Surface treatments

Phase and amplitude modulation based on intersubband transitions in electron transfer double quantum wells

E. Dupont, D. Delacourt, V. Berger, N. Vodjdani, and M. Papuchon

Appl. Phys. Lett. 62, 1907 (1993); http://dx.doi.org/10.1063/1.109539 (3 pages) | Cited 15 times

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We present an experimental study of the intersubband electroabsorption and electrorefraction of a coupled asymmetrical quantum well structure. The field induced carrier transfer from a wide well to a narrow well yields interesting electro‐optical properties. For instance, we found a particular wavelength region where a strong phase modulation is associated with a low absorption modulation. We verified that the measurements of the correlated phase and amplitude modulation were consistent with Kramers–Kronig transformations of experimental differential absorption spectra.
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78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Hp Optical processors, correlators, and modulators

Aging‐free InP substrates ready for molecular beam epitaxial growth of InAlAs/InGaAs heterostructures

S. Katsura, Y. Sugiyama, O. Oda, and M. Tacano

Appl. Phys. Lett. 62, 1910 (1993); http://dx.doi.org/10.1063/1.109540 (3 pages)

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Aging‐free InP substrates ready for molecular beam epitaxy have been developed by the inert gas packaging technique. The surface degradation of the InP substrate after chemical cleaning was evaluated by the quality of the 2DEG heterostructure grown on the substrate. The InP substrate in a package filled with nitrogen gas was used for MBE growth. The Hall mobility of an InAlAs/InGaAs heterostructure directly grown on the InP substrate without any pretreatment or chemical etching is larger than 10 000 cm2 /V s at 300 K. There are no aging effects on the sample stored even after six months.
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68.35.Dv Composition, segregation; defects and impurities
68.55.-a Thin film structure and morphology
81.65.-b Surface treatments

Study on thermal stability of carbon‐doped GaAs using novel metalorganic molecular beam epitaxial structures

Shinji Nozaki, Kiyoshi Takahashi, Masanori Shirahama, Keisuke Nagao, Junichi Shirakashi, Eisuke Tokumitsu, and Makoto Konagai

Appl. Phys. Lett. 62, 1913 (1993); http://dx.doi.org/10.1063/1.109541 (3 pages) | Cited 9 times

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Two novel carbon‐doped structures grown by metalorganic molecular beam epitaxy were used to study thermal stability over the temperature range from 650 to 800 °C. Each structure consists of several GaAs layers with different carbon concentrations to characterize thermal stability of GaAs layers with various carbon concentrations simultaneously. The structure shows no significant carbon diffusion even after an 800 °C‐240 min anneal. However, the hole concentration of each carbon‐doped GaAs layer in both structures has decreased, and a decrease of the hole concentration is more significant for a higher carbon concentration. With increasing the annealing time or temperature, the hole concentrations of all carbon‐doped GaAs layers approach to the same value, low 1019 cm−3.  
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61.72.uj III-V and II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
66.30.J- Diffusion of impurities

High contrast electro‐optic n‐i‐p‐i doping superlattice modulator

N. Linder, T. Gabler, K. H. Gulden, P. Kiesel, M. Kneissl, P. Riel, G. H. Döhler, X. Wu, J. Walker, and J. S. Smith

Appl. Phys. Lett. 62, 1916 (1993); http://dx.doi.org/10.1063/1.109543 (3 pages) | Cited 7 times

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Transmission changes in a n‐i‐p‐i doping superlattice have been measured. The structures were grown by a newly developed epitaxial shadow mask technique allowing to apply selective contacts to the n and p layers. For a voltage swing between only Upn=−4 and 0.8 V relative transmission changes of 65% below the band gap have been measured in a 2.66‐μm‐thick structure. The changes are larger than 50% in a wavelength range of more than 13 nm. The pure absorption changes are enhanced by a carrier‐ and field‐induced‐Bragg effect within the n‐i‐p‐i crystal. The experimental results are in very good quantitative agreement with calculations.
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78.66.Fd III-V semiconductors
42.79.Hp Optical processors, correlators, and modulators
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Near‐equilibrium growth of thick, high quality beta‐SiC by sublimation

Virgil B. Shields, Konjit Fekade, and Michael G. Spencer

Appl. Phys. Lett. 62, 1919 (1993); http://dx.doi.org/10.1063/1.109544 (3 pages) | Cited 11 times

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A close spaced near‐equilibrium growth technique was used to produce thick, high quality epitaxial layers of beta‐silicon carbide. The process utilized a sublimation method to grow morphologically smooth layers. The beta silicon carbide growth layers varied from about 200 to 750 μm in thickness. Chemical vapor deposition grown, 2–10 μm, beta silicon carbide films were used as seeds at 1860 and 1910 °C growth temperatures. The respective average growth rates were 20 and 30 μm per hour. The layers are p‐type with a 3.1×1017 cm−3 carrier concentration. Electrical measurements indicate considerable improvement in the breakdown voltage of Schottky barriers on growth samples. Breakdown values ranged from 25 to 60 V. These measurements represent the highest values reported for 3C‐SiC.
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81.10.Bk Growth from vapor
68.55.-a Thin film structure and morphology

Periodic faceting on vicinal GaAs(110) surfaces during epitaxial growth

M. Krishnamurthy, M. Wassermeier, D. R. M. Williams, and P. M. Petroff

Appl. Phys. Lett. 62, 1922 (1993); http://dx.doi.org/10.1063/1.109545 (3 pages) | Cited 22 times

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The formation and evolution of quasiperiodic microfacets on vicinal GaAs(110) surfaces grown by molecular beam epitaxy was investigated with transmission electron microscopy and modeled using Monte Carlo simulations. Layers of GaAs and (Al,Ga)As were grown on surfaces misoriented 0°–2° toward (010) (steps in the [001] direction). Under the growth conditions studied, the vicinal surfaces form quasiperiodic microfacets oriented along the step direction. The time evolution of the facet density and facet height as a function of vicinal angle indicate that the formation of microfacets is a result of kinetically limited step bunching during step‐flow growth.
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68.55.-a Thin film structure and morphology
68.35.Fx Diffusion; interface formation

Raman scattering from square profile, sinusoidal profile, and tilted AlxGa1−xAs/AlyGa1−yAs superlattices

F. G. Johnson and G. W. Wicks

Appl. Phys. Lett. 62, 1925 (1993); http://dx.doi.org/10.1063/1.109546 (3 pages)

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The Al‐like and Ga‐like longitudinal optic phonons from square profile, sinusoidal profile, and tilted AlxGa1−xAs/AlyGa1−yAs superlattices are examined using Raman spectroscopy. The Raman spectrum from a superlattice with a square composition profile and an Al composition modulation of 18% (x−y=0.18) exhibits Al‐ and Ga‐like longitudinal optic phonon peaks that are doublets. These doublets are no longer resolvable for a square profile superlattice with a 10% composition modulation (x−y=0.1), and the spectrum contains only single, broadened Al‐ and Ga‐like longitudinal optic phonon peaks. The spectra from sinusoidal profile superlattices also exhibit single, broadened phonon peaks for composition modulations that are less than or equal to 22% (x−y≤0.22). The spectrum of a tilted superlattice is similar to that of a square profile superlattice with a 10% composition modulation and to that of a sinusoidal profile superlattice with a composition modulation of 16%. The assignment of the sinusoidal profile with a 16% composition modulation to the tilted superlattice is consistent with a previous photoluminescence study of tilted superlattices.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.-a Thin film structure and morphology
78.30.Fs III-V and II-VI semiconductors

Switching, fatigue, and retention in ferroelectric Bi4Ti3O12 thin films

P. C. Joshi and S. B. Krupanidhi

Appl. Phys. Lett. 62, 1928 (1993); http://dx.doi.org/10.1063/1.109547 (3 pages) | Cited 76 times

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Thin films of bismuth titanate, Bi4Ti3O12, prepared by the metalorganic solution deposition technique and rapid thermally annealed at 700 °C for 20 s have shown good ferroelectric switching, fatigue, and retention characteristics. A switching time of 180 ns was measured for a 0.5 μm thick capacitor with an electrode area of 2.83×10−3 cm2. The switching degradation of the polarization state or fatigue was not significant, at least up to 1010 bipolar switching cycles. The films exhibited good memory retention characteristics after about 106 s.
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77.80.Fm Switching phenomena
77.55.-g Dielectric thin films
73.40.Rw Metal-insulator-metal structures
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