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26 Apr 1993

Volume 62, Issue 17, pp. 2003-2145

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Magnetic switching of THz beams

X.‐C. Zhang, Y. Jin, T. D. Hewitt, T. Sangsiri, L. E. Kingsley, and M. Weiner

Appl. Phys. Lett. 62, 2003 (1993); http://dx.doi.org/10.1063/1.109514 (3 pages) | Cited 34 times

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We demonstrate the use of a magnetic field to switch and to control the direction and polarization of a THz beam radiated from a semiconductor emitter.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
79.20.Ds Laser-beam impact phenomena
72.40.+w Photoconduction and photovoltaic effects

High‐power, single‐frequency operation of an InGaAsP/InGaAs active‐grating surface emitting amplifier at λ=1.7 μm

N. W. Carlson, R. Menna, P. Gardner, S. K. Liew, J. Andrews, A. Triano, J. Kirk, and W. Reichert

Appl. Phys. Lett. 62, 2006 (1993); http://dx.doi.org/10.1063/1.109515 (3 pages) | Cited 1 time

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We have demonstrated high‐power, single‐wavelength cw operation of an InGaAsP/InGaAs strained‐layer multi‐quantum‐well active‐grating surface‐emitting amplifier operating at a wavelength of 1.7 μm. Single‐wavelength operation was obtained with 38 dB suppression of amplified spontaneous emission at 107 mW cw power output.  
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Wavelength dependence of T0 in InGaAsP semiconductor laser diodes

J. O’Gorman and A. F. J. Levi

Appl. Phys. Lett. 62, 2009 (1993); http://dx.doi.org/10.1063/1.109516 (3 pages) | Cited 4 times

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The temperature sensitivity of laser threshold current in single mode, wavelength tunable, InGaAsP bulk active region semiconductor lasers diodes is measured in the temperature range, 293 K≲T≲355 K and wavelength range 1.23 μm≲λ≲1.35 μm. When proper account is taken of peak gain variation with temperature, the temperature dependence of laser threshold current (parameterized by T0) is insensitive to lasing wavelength over a wide tuning range.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Depth profiling of the d33 nonlinear coefficient in annealed proton exchanged LiNbO3 waveguides

M. L. Bortz, L. A. Eyres, and M. M. Fejer

Appl. Phys. Lett. 62, 2012 (1993); http://dx.doi.org/10.1063/1.109519 (3 pages) | Cited 48 times

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We report depth profiling of the d33 nonlinear coefficient in annealed proton exchanged LiNbO3 waveguides using reflected second‐harmonic generation from angle‐lapped samples. At depths greater than the initial proton exchange depth the d33 coefficient retains nearly its bulk LiNbO3 value, but within the initial proton exchange region the value of d33 varies with annealing time. These results reconcile previous conflicting measurements of the d33 coefficient and explain the variation in the efficiency of guided wave frequency conversion devices with annealing.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Novel calixarenes in thin films for efficient second harmonic generation

G. J. T. Heesink, N. F. van Hulst, B. Bölger, E. Kelderman, J. F. J. Engbersen, W. Verboom, and D. N. Reinhoudt

Appl. Phys. Lett. 62, 2015 (1993); http://dx.doi.org/10.1063/1.109520 (3 pages) | Cited 9 times

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Calix[4]arenes are a novel type of molecules for nonlinear optics. In a single molecule four π‐conjugated systems are combined. Corona poled guest‐host polymer systems [calix[4]arenes‐poly(methyl‐methacrylate)] with transparency into the UV and loading up to 100% show a high degree of orientation. The maximum resonant d33 nonlinear coefficient measured at a fundamental wavelength of 590 nm is 51 pm/V. The d33 values of the thin films relax after poling to 65% of their maximum value. Results indicate self‐organization of the molecules upon poling.  
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Jk Polymers and organics
78.66.Qn Polymers; organic compounds

Temperature characteristics of (InAs)1/(GaAs)4 short‐period superlattices quantum well laser

N. K. Dutta, Naresh Chand, J. Lopata, and R. Wetzel

Appl. Phys. Lett. 62, 2018 (1993); http://dx.doi.org/10.1063/1.109521 (3 pages) | Cited 7 times

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The temperature characteristics of (InAs)1/(GaAs)4 superlattice quantum well lasers are analyzed both experimentally and theoretically. The measured threshold current density as a function of temperature is characterized by a T0=135 K for 115 K<T<380 K and by T0=47 K for 420 K<T<480 K. The radiative and nonradiative recombination rates and the gain versus carrier density relationship in monolayer superlattice structures are calculated. Inclusion of the nonradiative recombination process is necessary to explain the observed high‐temperature characteristics of these lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation
78.66.Fd III-V semiconductors

Room‐temperature lasing action in In0.51Ga0.49P/In0.2Ga0.8As microcylinder laser diodes

A. F. J. Levi, R. E. Slusher, S. L. McCall, S. J. Pearton, and W. S. Hobson

Appl. Phys. Lett. 62, 2021 (1993); http://dx.doi.org/10.1063/1.109492 (3 pages) | Cited 46 times

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We report room‐temperature operation of electrically pumped whispering‐gallery mode In0.51Ga0.49P/In0.2Ga0.8As microcylinder laser diodes with emission at wavelength λ=1.0 μm and threshold current Ith=5 mA. Because the lasing modes do not overlap the diode’s central region, carrier density is not efficiently pinned by above‐threshold stimulated emission.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Simultaneous multiple wavelength operation of a multistripe array grating integrated cavity laser

K. R. Poguntke, J. B. D. Soole, A. Scherer, H. P. LeBlanc, C. Caneau, R. Bhat, and M. A. Koza

Appl. Phys. Lett. 62, 2024 (1993); http://dx.doi.org/10.1063/1.109493 (3 pages) | Cited 17 times

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Simultaneous multiple‐wavelength operation of a multistripe array grating integrated cavity laser is reported. We demonstrate simultaneous lasing from a single output port at 2, 3, and 4 discrete wavelengths, each independently selected from a comb of 9 wavelengths set at ∼2 nm intervals, from 1512 to 1528 nm. Signal cross talk is examined for the case of two‐wavelength emission and found to be independent of the wavelength separation. The emission wavelengths were linearly spaced to within ±0.02 nm, while the comb’s central wavelength deviated by less than 2 nm from its design value. This is the highest wavelength linearity and accuracy so far recorded for a monolithic multiwavelength source.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.82.-m Integrated optics

Low threshold voltage continuous wave vertical‐cavity surface‐emitting lasers

T. J. Rogers, C. Lei, D. G. Deppe, and B. G. Streetman

Appl. Phys. Lett. 62, 2027 (1993); http://dx.doi.org/10.1063/1.109494 (3 pages) | Cited 5 times

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Data are presented demonstrating a design and fabrication process for the realization of low‐threshold, high‐output vertical‐cavity surface‐emitting laser diodes with low series resistance. Lateral current confinement is achieved in the laser structures through the use of molecular‐beam epitaxial regrowth over a 1000‐Å‐thick patterned layer of low growth temperature AlGaAs incorporated into the p‐type top mirror. A maximum cw output power in excess of 5.7 mW, at 300 K is demonstrated for 15‐μm‐diam devices. With increased top mirror reflectivity (through the addition of dielectric layers), the low series resistance of the design results in a bias voltage of only 1.8 V at a threshold current of 1.9 mA for 10‐μm‐diam devices.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Detection and lifetime measurement of single molecules in flowing sample streams by laser‐induced fluorescence

Charles W. Wilkerson, Peter M. Goodwin, W. Patrick Ambrose, John C. Martin, and Richard A. Keller

Appl. Phys. Lett. 62, 2030 (1993); http://dx.doi.org/10.1063/1.109495 (3 pages) | Cited 34 times

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The detection and measurement of fluorescence lifetimes of single Rhodamine‐110 molecules in a flowing, aqueous sample stream is described. Time‐correlated single‐photon counting, used in combination with mode‐locked picosecond pulsed excitation, allows the detection of single fluorescent molecules in the presence of significant solvent Raman and Rayleigh backgrounds. The fluorescence lifetime of a detected molecule is estimated from the record of arrival times (relative to the excitation pulse) of photons detected during the molecule’s passage through the ∼1 pL excitation volume.
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33.50.Dq Fluorescence and phosphorescence spectra
07.77.-n Atomic, molecular, and charged-particle sources and detectors
37.20.+j Atomic and molecular beam sources and techniques

Directional coupler electro‐optic modulator in AlGaAs/GaAs with low voltage‐length product

M. Nisa Khan, Wei Yang, and Anand Gopinath

Appl. Phys. Lett. 62, 2033 (1993); http://dx.doi.org/10.1063/1.109470 (3 pages) | Cited 2 times

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An AlGaAs/GaAs ridge directional coupler electro‐optic modulator with a voltage‐length (VL) product of only 7.0 V mm (L=3.5 mm, V=2 V) is reported. The low VL product has resulted from the efficient electrode configuration as well as the large overlap between the optical and electrical fields in the waveguides. Propagation loss of 3.4 dB/cm and the measured I‐V characteristics confirm that the contributions from the Franz–Keldysh, charge‐carrier, and thermal effects are small. To our knowledge, this is the lowest VL product ever reported for an electro‐optic directional coupler modulator utilizing the Pockels effect. An extinction ratio of 13 dB was measured for the modulator at 0.83 μm wavelength.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Hp Optical processors, correlators, and modulators

Excitation of high frequency surface acoustic waves by phase velocity scanning of a laser interference fringe

Hideo Nishino, Yusuke Tsukahara, Yoshihiko Nagata, Toshio Koda, and Kazushi Yamanaka

Appl. Phys. Lett. 62, 2036 (1993); http://dx.doi.org/10.1063/1.109471 (3 pages) | Cited 18 times

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We present a novel method for generating 100 MHz band surface acoustic wave (SAW) by using a scanning interference fringe at the phase velocity of the SAW. The scanning interference fringe is obtained by intersecting two laser beams with different frequencies, and used as a thermoelastic source. The principle of this method is described, and experimentally demonstrated in the 110 MHz Rayleigh waves on an aluminum specimen generated by a long‐pulse (140 ns) Q‐switched Nd:YAG laser.
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68.35.Gy Mechanical properties; surface strains
43.35.Ud Thermoacoustics, high temperature acoustics, photoacoustic effect
43.35.Yb Ultrasonic instrumentation and measurement techniques

Control of an unstable electron cyclotron resonance plasma

Mark A. Jarnyk, Jeffrey A. Gregus, Eray S. Aydil, and Richard A. Gottscho

Appl. Phys. Lett. 62, 2039 (1993); http://dx.doi.org/10.1063/1.109472 (3 pages) | Cited 5 times

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Although plasmas are used throughout the microelectronics industry for etching, deposition, and cleaning of thin films, control of plasma processes has been a long‐standing problem. Because of the nonlinear properties of plasmas, such as the coupling between wave propagation, density profile, and power absorption, plasma reactors are prone to unstable operation, multiple steady states, and hysteresis. We report observation and suppression of an abrupt transition in the operating mode of an electron cyclotron resonance reactor that alters the ion flux to device wafers by more than twofold. While the origin of this mode change is not well understood, we show here that it is strongly correlated with the neutral gas density, which slowly decreases as the reactor temperature increases during a process or from run to run. By measuring the quartz liner temperature and adjusting the pressure to maintain an approximately constant neutral gas density, the mode change can be avoided indefinitely. In a simulated manufacturing process, where the plasma is pulsed on and off, a mode change occurs after several cycles unless the neutral density, instead of the pressure, is controlled.
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52.25.Gj Fluctuation and chaos phenomena
52.70.Ds Electric and magnetic measurements
52.50.Gj Plasma heating by particle beams

Transient growth rate change during gas source molecular beam epitaxy of Si1−xGex alloys

N. Ohtani, S. M. Mokler, M. H. Xie, J. Zhang, and B. A. Joyce

Appl. Phys. Lett. 62, 2042 (1993); http://dx.doi.org/10.1063/1.109473 (3 pages) | Cited 1 time

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Reflection high‐energy electron diffraction intensity oscillations during gas source molecular beam epitaxy growth of Si1−xGex using disilane and germane are reported. Transient changes of the oscillation period and hence the growth rate are observed during the growth. Their origin is discussed on the basis of hydrogen desorption kinetics on the alloy surface and attributed to Ge surface segregation effects at the growth interface. This observation provides a unique opportunity for in situ investigations with monolayer‐scale resolution, of Ge segregation effects in Si/Si1−xGex heterostructures.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
64.75.-g Phase equilibria
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics

Structural and electrical properties of La0.5Sr0.5CoO3 epitaxial films

Jeffrey T. Cheung, Peter E. D. Morgan, Douglas H. Lowndes, X‐Y Zheng, and John Breen

Appl. Phys. Lett. 62, 2045 (1993); http://dx.doi.org/10.1063/1.109474 (3 pages) | Cited 107 times

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Epitaxial La0.5Sr0.5CoO3 films with very smooth surface morphology were grown on (100) SrTiO3 and (100) MgO substrates by pulsed laser deposition. Scanning tunneling microscopy reveals that the thin film is formed by the coalescence of many aligned square mesas. The growth proceeds from the edges of terraces which are stacked on the mesa. Spiral growth is never observed. Films display an crystallographically isotropic metallic‐like electrical conductivity but become semiconductor‐like after vacuum annealing. The energy for carrier activation is 0.3 eV. The change of the electrical resistivity of La0.5Sr0.5CoO3 with oxygen pressure at high temperature is much less sensitive than that of YBa2Cu3O7−x.
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81.15.Fg Pulsed laser ablation deposition
68.55.-a Thin film structure and morphology
73.61.Le Other inorganic semiconductors

Graphoepitaxy of YBa2Cu3O7 thin films

William D. Dozier and Christine E. Platt

Appl. Phys. Lett. 62, 2048 (1993); http://dx.doi.org/10.1063/1.109475 (3 pages) | Cited 3 times

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We report on the graphoepitaxial growth of YBa2Cu3O7 (YBCO) thin films on LaAlO3 (LAO) substrates textured with submicron features. This is the first use of a substrate microstructure to template and control the morphology of a thin film. Two‐dimensional close‐packed crystalline monolayers of polystyrene spheres 482 nm in diameter are used as lithographic masks for the ion milling of arrays of conical posts in the substrates. This regular pattern is reflected in the growth of the YBCO film which is at once epitaxial to the substrate and disrupted on the same length scale as the substrate texture. The YBCO thin films are structurally and electrically of the same quality as films deposited on untreated substrates.
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68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors

Independent determination of composition and relaxation of partly pseudomorphically grown Si‐Ge layers on silicon by a combination of standard x‐ray diffraction and transmission electron microscopy measurements

E. Bugiel and P. Zaumseil

Appl. Phys. Lett. 62, 2051 (1993); http://dx.doi.org/10.1063/1.109476 (3 pages) | Cited 14 times

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The concentration of Ge and the relaxation of partly pseudomorphically grown thin SiGe layers on Si can be found independently by a combination of standard x‐ray double‐crystal diffractometry (DCD) and transmission electron microscopy (TEM). DCD and TEM determine the lattice constant variations of the netplanes parallel and perpendicular to the surface from the angular distance between substrate and layer peak and from the average distance of misfit dislocations or the distance of Moiré fringes, respectively. The method is demonstrated for three samples with low, medium, and high Ge content.
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68.55.-a Thin film structure and morphology
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.

Probable electron distribution in crystal and the maximum range evaluation

S. T. Nakagawa

Appl. Phys. Lett. 62, 2054 (1993); http://dx.doi.org/10.1063/1.109477 (3 pages) | Cited 4 times

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The atomic Wigner–Seitz sphere approximation assigns a sphere to each atom in solid. This has often been used in combination with the binary collision approximation. However, it causes a lack or excess of electrons around the center of the channels. As an alternative to this approximation we propose a simple muffin‐tin model. Making use of a cluster to represent each axial channel, the electronic stopping powers for channeled ions are figured according to a local density approximation. The present model reproduces reasonable maximum ranges in depth profiles on cases of channeling implantation. Results are shown for cases of B into Si〈100〉 and Si〈110〉.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)

Variable growth modes of CaF2 on Si(111) determined by x‐ray photoelectron diffraction

J. D. Denlinger, Eli Rotenberg, Uwe Hessinger, M. Leskovar, and Marjorie A. Olmstead

Appl. Phys. Lett. 62, 2057 (1993); http://dx.doi.org/10.1063/1.109478 (3 pages) | Cited 19 times

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Chemical discrimination of bulk and interface Ca 2p x‐ray photoelectron diffraction modulations is used to identify three growth regimes during the initial stages of CaF2 epitaxy on Si(111). Low flux, high temperature conditions produce island growth atop a nonwetting, chemically reacted Ca‐F interface layer. Changing the growth kinetics by increasing the flux produces more laminar growth. Lowering the substrate temperature produces a more stoichiometric CaF2 interface layer that results in immediate wetting and laminar growth.
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68.55.-a Thin film structure and morphology
79.60.Jv Interfaces; heterostructures; nanostructures
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Strain and defect generation during interdiffusion of GaAs into Al0.5In0.5P

R. L. Thornton, F. A. Ponce, G. B. Anderson, and F. J. Endicott

Appl. Phys. Lett. 62, 2060 (1993); http://dx.doi.org/10.1063/1.109479 (3 pages) | Cited 3 times

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We present results on the analysis of the interdiffusion process of a discrete GaAs layer into an Al0.5In0.5P half space using Si doping as an agent for enhanced layer interdiffusion. We have observed enhanced interdiffusion on both column III and column V sites, with the column III interdiffusion coefficient exceeding the column V interdiffusion coefficient by two orders of magnitude. Due to the disparity between these diffusion coefficients, substantial defect producing strain is introduced by the interdiffusion process. We have shown that by modeling the resulting strain profiles and applying a generalization of a critical thickness analysis, the instability of such interdiffused structures can be understood.
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66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Kinetics of recovery of the light‐induced defects in hydrogenated amorphous silicon under illumination

H. Gleskova, P. A. Morin, and S. Wagner

Appl. Phys. Lett. 62, 2063 (1993); http://dx.doi.org/10.1063/1.109480 (3 pages) | Cited 21 times

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The results of a study of the kinetics of the light‐induced annealing of defects in hydrogenated amorphous silicon (a‐Si:H) are presented. Our results show that at temperatures between 92 and 152 °C illumination increases the rate of annealing compared to annealing in the dark. The rates of annealing in the dark and under illumination exhibit the same functional dependence on the defect density. This observation suggests that the mechanisms for ‘‘dark’’ and ‘‘light’’ annealing are identical.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.72.Cc Kinetics of defect formation and annealing

Low spectral chirp and large electroabsorption in a strained InGaAsP/InGaAsP multiple quantum well modulator

J. Langanay, C. Starck, M. Boulou, M. Nicolardot, J. Y. Emery, C. Fortin, P. Aubert, and D. Lesterlin

Appl. Phys. Lett. 62, 2066 (1993); http://dx.doi.org/10.1063/1.109637 (3 pages) | Cited 5 times

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An intensity modulator based on the quantum confined Stark effect with strained InGaAsP quantum wells and InGaAsP barriers was grown using gas source molecular beam epitaxy. The highest electroabsorption effect and the first estimation of the spectral chirp ever reported with such a modulator under TE polarization mode around 1.55 μm were obtained. The attenuation was measured to be better than −30 dB with a reverse driving voltage lower than 3 V and the phase‐amplitude coupling factor has been estimated to be lower than 0.2 over a large operating wavelength range.
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42.79.Hp Optical processors, correlators, and modulators
42.65.Pc Optical bistability, multistability, and switching, including local field effects
78.66.Fd III-V semiconductors

Raman scattering analysis of relaxed GexSi1−x alloy layers

P. M. Mooney, F. H. Dacol, J. C. Tsang, and J. O. Chu

Appl. Phys. Lett. 62, 2069 (1993); http://dx.doi.org/10.1063/1.109481 (3 pages) | Cited 54 times

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We have used Raman scattering to evaluate thick epitaxial GexSi1−x layers with 0.20≤x≤0.43 grown on Si (100) substrates. We show that a detailed consideration of the composition dependencies of the relative intensities of the various phonon modes can enhance the sensitivity of Raman scattering to variations in composition and strain. We find that samples are uniform on a scale of ≂1 μm laterally and <1000 Å in the growth direction.
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68.55.-a Thin film structure and morphology
78.30.Hv Other nonmetallic inorganics

Electroabsorption in InGaAsP: electro‐optical modulators and bistable optical switches

B. Knüpfer, P. Kiesel, A. Höfler, P. Riel, G. H. Döhler, and E. Veuhoff

Appl. Phys. Lett. 62, 2072 (1993); http://dx.doi.org/10.1063/1.109482 (3 pages) | Cited 10 times

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We report Franz–Keldysh absorption spectra of InGaAsP obtained from transmission and photoresponse measurements in InP/InGaAsP/InP p‐i‐n double heterostructures. The values of the absorption changes (Δαmax≊3000 cm−1) are comparable with those obtained from the quantum‐confined Stark effect. Optical bistability is observed at very low light intensities (40 μW/cm−2), due to very low leakage currents and the strong absorption changes above the band gap.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Hp Optical processors, correlators, and modulators
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.66.Fd III-V semiconductors

Direct measurements of electron‐optical photon scattering rates in ultrathin GaAs‐AlAs multiple quantum well structures

K. T. Tsen, R. Joshi, and H. Morkoç

Appl. Phys. Lett. 62, 2075 (1993); http://dx.doi.org/10.1063/1.109483 (3 pages) | Cited 1 time

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Electron‐optical phonon scattering rates in ultrathin GaAs‐AlAs multiple quantum well structures have been directly measured by using time‐resolved Raman spectroscopy on a subpicosecond timescale. We have found that when the GaAs well width increases from 20 to 60 Å, electron‐AlAs‐like‐optical phonon scattering rate decreases by a factor of about 3. The experimental results are explained with theoretical calculations of electron‐optical phonon interactions recently carried out by K. Huang and B. Zhu [Phys. Rev. B 38, 13377 (1988)].
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Dn Low-field transport and mobility; piezoresistance
78.47.-p Spectroscopy of solid state dynamics
78.30.Fs III-V and II-VI semiconductors
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