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3 May 1993

Volume 62, Issue 18, pp. 2155-2289

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Whispering‐gallery‐mode dye lasers in blue, green, and orange regions using dye‐doped, solid, small spheres

Hiroshi Taniguchi, Tamiya Fujiwara, Hiroshi Yamada, Shinji Tanosaki, and Mamoru Baba

Appl. Phys. Lett. 62, 2155 (1993); http://dx.doi.org/10.1063/1.109636 (3 pages) | Cited 5 times

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A whispering‐gallery‐mode (WGM) dye laser in blue, green, and orange regions is reported using dye‐doped, solid, small spheres. A WGM dye laser is pumped by a transversely excited atmospheric UV N2 laser. Some features of the WGM dye laser are demonstrated.
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42.55.Mv Dye lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Phase characteristics of reflection electroabsorption modulators

Daxin Liu, B. Pezeshki, S. M. Lord, and J. S. Harris

Appl. Phys. Lett. 62, 2158 (1993); http://dx.doi.org/10.1063/1.109454 (3 pages) | Cited 4 times

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The influence of refractive index changes on the phase characteristics of a reflection Fabry–Perot quantum well modulator is discussed and compared with experiment. Although a Fabry–Perot cavity can reduce the effective chirp near resonance, the phase change is highly nonlinear and critically dependent on the wavelength.
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42.79.Hp Optical processors, correlators, and modulators
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Second harmonic generation in disperse‐red‐labeled poly(methyl methacrylate) Langmuir–Blodgett film

Kotaro Kajikawa, Takeshi Anzai, Hideo Takezoe, Atsuo Fukuda, Shuji Okada, Hiro Matsuda, Hachiro Nakanishi, Takashi Abe, and Hiroshi Ito

Appl. Phys. Lett. 62, 2161 (1993); http://dx.doi.org/10.1063/1.109455 (3 pages) | Cited 5 times

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We have prepared a second harmonic (SH) active polymer LB film of copoly(2‐{N‐ethyl‐N‐[4‐(4‐nitrophenylazo)phenyl]amino}ethyl acrylate/methyl methacrylate) by means of horizontal deposition. Considerably high susceptibilities χzzz=41.9 pm/V (1.00×10−7 esu) and χzxx=7.33 pm/V (1.75×10−8 esu) were obtained without poling process. Although the initial 4 monolayers show no SH activity, the monolayers more than fifth have a SH active structure.  
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Qn Polymers; organic compounds
42.70.Jk Polymers and organics

Coherent photon seeding of actively mode locked laser diodes

Hitoshi Kawaguchi and Abedin Kazi Sarwar

Appl. Phys. Lett. 62, 2164 (1993); http://dx.doi.org/10.1063/1.109456 (3 pages) | Cited 7 times

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We have applied a coherent photon seeding technique to actively mode locked laser diodes for the first time and successfully achieved a single longitudinal laser diode mode operation with a side mode suppression ratio of −20 dB. We have also proposed a new kind of pulse compressor consisting of a grating and a plane mirror, which gives positive group velocity dispersion. We obtained 11 ps pulses with spectral width of 0.32 nm. This gives us a time bandwidth product of 0.63, which is approximately twice the transform limited value for a sech2 pulse.  
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Photoinduced refractive index change in a photoconductive electro‐optic polymer

T. Kawakami and N. Sonoda

Appl. Phys. Lett. 62, 2167 (1993); http://dx.doi.org/10.1063/1.109457 (3 pages) | Cited 5 times

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We report the photorefraction in polymeric materials such as a polyvinylcarbazole doped with nonlinear optical dye and a copolymer of a NLO dye‐pendant monomer and a monomer with carbazolyl group. In the latter polymer, diffraction efficiency was on 10−6 order, the change of the refractive index was reversible and its decay was accelerated by photoirradiation. The observed photorefraction was mainly due to the molar refraction change of carbazolyl groups caused by photoinduced ionization, and this is evidence that trapped ion radicals exist in the polymer forming grating, which is necessary for the real photorefractives.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.70.Jk Polymers and organics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

InGaAs/GaAs strained quantum wire lasers grown by organometallic chemical vapor deposition on nonplanar substrates

M. Walther, E. Kapon, C. Caneau, D. M. Hwang, and L. M. Schiavone

Appl. Phys. Lett. 62, 2170 (1993); http://dx.doi.org/10.1063/1.109458 (3 pages) | Cited 40 times

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The structure and device characteristics of InGaAs/GaAs strained quantum wire (QWR) lasers grown by organometallic chemical vapor deposition on 0.25‐μm pitch periodic corrugations are reported. The crescent‐shaped InGaAs wires, 14–17 nm thick and 70–80 nm in full width, are formed in situ due to surface diffusion of In and Ga species to the bottom of the grating grooves. Room‐temperature pulsed operation has been achieved with threshold current densities of 1.9 kA/cm2 for 1.1 mm long lasers with uncoated facets. For laser stripes aligned perpendicular to the wires, the lasing wavelength remains almost constant at 920 nm for temperatures 80<T<150 K due to second‐order Bragg reflection from the QWR array. The possibility of achieving gain‐coupled distributed feedback using the periodic gain modulation in these devices is discussed.  
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

KrF excimer laser projection patterned deposition of aluminum from triethylamine alane as adsorbate precursor

F. Foulon and M. Stuke

Appl. Phys. Lett. 62, 2173 (1993); http://dx.doi.org/10.1063/1.109459 (3 pages) | Cited 6 times

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KrF pulsed excimer laser‐induced decomposition of the triethylamine alane [(C2H5)3NAlH3] precursor in the adsorbed phase is shown to allow projection patterned deposition of Al at room temperature. The deposited height increases linearly with the laser energy dose suggesting that the decomposition is photolytically driven. Mirrorlike Al films are deposited at rates up to about one Al monolayer per pulse which corresponds to rates up to 2 μm/min when photolyzing at 100 Hz. Al films with good adhesion and resistivities down to 7.5 μΩ cm (2.5 times bulk), were deposited on quartz, Al2O3, and GaAs substrates. The process has good spatial selectivity. Patterns with 1 μm resolution have been generated.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light

High‐temperature continuous operation above 200 °C of GaAs lasers using an InGaAlP cladding layer

K. Itaya, G. Hatakoshi, Y. Nishikawa, M. Ishikawa, and M. Okajima

Appl. Phys. Lett. 62, 2176 (1993); http://dx.doi.org/10.1063/1.109460 (3 pages) | Cited 2 times

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A new GaAs laser diode employing InGaAlP for the cladding layer has been successfully fabricated. A large band‐gap difference between the GaAs active and InGaAlP cladding layers reduced the electron overflow, which drastically improved the temperature characteristics. The highest temperature continuous wave operation of 212 °C was obtained. A large characteristic temperature, T0 of 190 K was maintained up to 140 °C. Any significant problem due to a heterointerface of GaAs/InGaAlP including high Al composition was not observed through the laser characteristics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Third‐harmonic generation in GeO2‐doped silica single‐mode optical fibers

D. L. Nicácio, E. A. Gouveia, N M. Borges, and A. S. Gouveia‐Neto

Appl. Phys. Lett. 62, 2179 (1993); http://dx.doi.org/10.1063/1.109461 (3 pages) | Cited 7 times

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Third‐harmonic generation of 1.319 μm Nd:YAG laser pulses in circular‐core GeO2‐doped silica single‐mode fibers is reported. The experimental results have shown that the blue‐violet light generated at 439 nm is less than 0.2 nm wide and its intensity depends strongly upon GeO2‐doping concentration for fixed fiber length and pump power. It has been observed that for GeO2‐doping concentrations greater than 9 mol %, the third‐harmonic signal was the unique visible wavelength line exiting the fiber span throughout the spectral region of 400–800 nm. The frequency tripling process started immediately with fiber pump light illumination, i.e., no previous long‐time preparation mechanism was required in order to have appreciable third‐harmonic generation.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.81.-i Fiber optics

Polyazomethine conjugated polymer film with second order nonlinear optical properties fabricated by electric‐field‐assisted chemical vapor deposition

Satoshi Tatsuura, Wataru Sotoyama, Katsusada Motoyoshi, Azuma Matsuura, Tomoaki Hayano, and Tetsuzo Yoshimura

Appl. Phys. Lett. 62, 2182 (1993); http://dx.doi.org/10.1063/1.109462 (3 pages) | Cited 5 times

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We fabricated polyazomethine head‐to‐tail conjugated polymer films with second order nonlinear optical (NLO) properties using a dry‐processing technique, electric‐field‐assisted chemical vapor deposition (E‐CVD). Molecular orbital calculations show that the polyazomethine conjugated polymer chain, to which methoxy groups are attached as donors, has second order NLO susceptibility, β, 3–5 times larger than that of paranitroaniline. During film deposition the monomers were ordered by an electric field applied between slit‐type electrodes, and simultaneously polymerized. A channel waveguide for the TE mode of a He‐Ne laser beam was formed in a polymer film between the electrode gap. An electro‐optic (EO) effect in the polymer film was observed using a Mach–Zehnder interferometer. This indicates that head‐to‐tail conjugated polymers would be promising for second order NLO materials.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
42.70.Jk Polymers and organics
42.65.-k Nonlinear optics
78.66.Qn Polymers; organic compounds

Subnanosecond optically addressable generalized optical crossbar switch with an aggregate throughput rate of 4.2 Gbit/s

Zeqi Pan and Mario Dagenais

Appl. Phys. Lett. 62, 2185 (1993); http://dx.doi.org/10.1063/1.109463 (3 pages) | Cited 2 times

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We report on a novel scheme to implement a high‐performance optically addressable generalized optical crossbar switch based on Fabry–Perot nonlinear diode laser amplifiers. This approach permits fast, parallel optical reconfiguration and a potentially large switch size. By using discrete components, we have demonstrated a 1×3 optical crossbar switch with an aggregate throughput rate of 4.2 Gbit/s, and a reconfiguration time of less than 1 ns. In addition, we demonstrate wavelength conversion at bit rates up to 1.5 Gbit/s, with a facet‐to‐facet usable gain of 9.6 dB.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Group‐velocity‐matched second‐harmonic generation: An efficient scheme for femtosecond ultraviolet pulse generation in periodically domain‐inverted β‐BaB2O4

K. Hayata and M. Koshiba

Appl. Phys. Lett. 62, 2188 (1993); http://dx.doi.org/10.1063/1.109464 (3 pages) | Cited 13 times

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See Also: Erratum

Show Abstract
With the combined use of the group‐velocity‐matched and the quasi‐phase‐matched frequency doubling in β‐BaB2O4, femtosecond ultraviolet pulse generation is found to be realizable with high efficiency. Calculation of the group‐velocity mismatch shows that at ∼630 nm wavelength of the pump pulse the mismatch vanishes completely. Typical design parameters such as the walk‐off length, the dispersion lengths, and the quasi‐phase‐matching period are evaluated numerically around the zero walk‐off wavelength. Temperature tuning of the operation wavelength is investigated as well.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.72.Bj Visible and ultraviolet sources
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Experimental study of volume holographic interconnects using random patterns

Hyuk Lee and Sang Kyu Jin

Appl. Phys. Lett. 62, 2191 (1993); http://dx.doi.org/10.1063/1.109438 (3 pages) | Cited 12 times

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An optical interconnecting scheme utilizing volume holograms of random patterns instead of plane waves is described. The new method is analyzed by using a perturbative integral expansion technique. Experimental results demonstrating the new scheme are also presented.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.40.-i Holography

Buried modes in combined Ti diffused and Li outdiffused LiNbO3 slab waveguides

Eli Arad, Shlomo Ruschin, and David Nir

Appl. Phys. Lett. 62, 2194 (1993); http://dx.doi.org/10.1063/1.109439 (3 pages)

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Buried waveguiding planar modes of well‐defined profiles were observed in samples undergoing simultaneous Ti indiffusion and Li outdiffusion in a water vapor atmosphere. Each of these modes was distinctly excited by end‐fire fiber coupling and suffered no loss by metal loading. An index profile which fits the mode shapes measured, and a mechanism is suggested based on the influence of a Ti‐rich layer compound on the Li outdiffusion process.
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66.30.J- Diffusion of impurities
66.30.H- Self-diffusion and ionic conduction in nonmetals
42.79.Gn Optical waveguides and couplers

Simulation of the shielding of dust particles in low pressure glow discharges

Seung J. Choi and Mark J. Kushner

Appl. Phys. Lett. 62, 2197 (1993); http://dx.doi.org/10.1063/1.109440 (3 pages) | Cited 17 times

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The dynamics of the shielding of particulates (‘‘dust’’) in low pressure glow discharges have been investigated with a pseudoparticle‐in‐cell simulation for electrons and ions in the vicinity of a dust particle. The potential of the dust particle, and the orbital nature of ions around the dust particle, depend on the collisionality of the ions. Collisions of orbiting ions effectively increase the ion flux collected by the particle, thereby increasing its potential to more positive values. Electron and ion momentum transfer and collection cross sections for scattering from the dust particle are presented.
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52.25.Vy Impurities in plasmas
52.65.-y Plasma simulation
52.20.Hv Atomic, molecular, ion, and heavy-particle collisions
52.40.Hf Plasma-material interactions; boundary layer effects

Biaxial Young’s modulus of silicon carbide thin films

A. Jean, M. A. El Khakani, M. Chaker, S. Boily, E. Gat, J. C. Kieffer, H. Pépin, M. F. Ravet, and F. Rousseaux

Appl. Phys. Lett. 62, 2200 (1993); http://dx.doi.org/10.1063/1.109441 (3 pages) | Cited 2 times

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We have investigated the biaxial Young’s modulus of amorphous SiC thin films which have been produced by using laser ablation, triode sputtering, and plasma enhanced chemical vapor deposition techniques. It is observed that the biaxial Young’s modulus increases with the Si—C bond density in the films.
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68.60.Bs Mechanical and acoustical properties
61.43.Dq Amorphous semiconductors, metals, and alloys
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Effect of Cu content on the reaction growth and morphology of an Al12W compound between Al‐Cu/Ti‐W bilayers

M. Park, S. J. Krause, and S. R. Wilson

Appl. Phys. Lett. 62, 2203 (1993); http://dx.doi.org/10.1063/1.109442 (3 pages)

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The effect of Cu content on the reaction growth and morphology of the Al12W phase in annealed Al‐Cu/Ti‐W films was directly studied by cross‐section transmission electron microscopy. After heat treatment at 450 °C for 30 min, spiked growths of the Al12W phase penetrated into the overlying Al‐0.5 wt % Cu film. In contrast, increasing Cu concentration to 1.5% in the Al film suppressed the spiked growth of the Al12W phase, resulting in a smooth and discrete layer of Al12W between the Al‐Cu and Ti‐W films. It is suggested that an increasing amount of grain boundary segregation of Cu in the Al alloy film suppressed the Al12W spiked growth.
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68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers
68.55.-a Thin film structure and morphology

Dislocation glide in {110} planes in semiconductors with diamond or zinc‐blende structure

M. Albrecht, H. P. Strunk, R. Hull, and J. M. Bonar

Appl. Phys. Lett. 62, 2206 (1993); http://dx.doi.org/10.1063/1.109443 (3 pages) | Cited 26 times

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The activation of the secondary a/2〈110〉{110} glide systems as observed by transmission electron microscopy in epitaxial Ge(Si) and InGaAs layers grown on comparatively highly misfitting substrates, is rationalized in terms of a mechanical equilibrium analysis that includes a frictional force on the gliding dislocations. The conditions for occurrence of further secondary glide planes, such as {113} and {100}, are outlined.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.55.-a Thin film structure and morphology

Observation of arsenic precipitates in GaInAs grown at low temperature on InP

J. P. Ibbetson, J. S. Speck, A. C. Gossard, and U. K. Mishra

Appl. Phys. Lett. 62, 2209 (1993); http://dx.doi.org/10.1063/1.109418 (3 pages) | Cited 12 times

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Single‐crystal Ga1−xInxAs (x=0.4) grown on InP by molecular‐beam epitaxy at low substrate temperatures (250–150 °C) has been examined by transmission electron microscopy. Arsenic precipitates were observed following an ex situ anneal at 550 °C. The precipitates coarsen during higher‐temperature anneals at 600 and 700 °C. Microstructure dependence on the growth temperature was similar to that observed in low‐temperature grown GaAs. Arsenic precipitate volume fraction increased with decreasing growth temperature, with a measured maximum value of ∼0.4%.
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61.72.Cc Kinetics of defect formation and annealing
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
64.75.-g Phase equilibria

Zinc doping of Ga0.51In0.49P grown on GaAs(100) substrates by chemical beam epitaxy

R. M. Kapre, W. T. Tsang, N. T. Ha, M. C. Wu, and Y. K. Chen

Appl. Phys. Lett. 62, 2212 (1993); http://dx.doi.org/10.1063/1.109419 (3 pages) | Cited 4 times

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We report on the p‐type doping of Ga0.51In0.49P lattice matched to GaAs(100) using gaseous diethylzinc by chemical beam epitaxy. The doping concentration was found to decrease with substrate temperature with an apparent activation energy of 5.3 eV. It was found necessary to keep the substrate temperature below about 500 °C to obtain doping in the 1018/cm3 range. The doping concentration shows a 0.8th power law with increasing dopant flow rate and saturates at approximately 5×1018/cm3. The p‐doped GaInP layers were used as cladding layers for 0.98 μm strained InGaAs/GaAs lasers which show state‐of‐the‐art performance.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
42.55.Px Semiconductor lasers; laser diodes

Ge0.2Si0.8/Si Bragg‐reflector mirrors for optoelectronic device applications

Ravi Kuchibhotla, Joe C. Campbell, John C. Bean, Larry Peticolas, and Robert Hull

Appl. Phys. Lett. 62, 2215 (1993); http://dx.doi.org/10.1063/1.109420 (3 pages) | Cited 19 times

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Previous work has shown that III‐V semiconductor multilayer films can be designed to serve as Bragg reflector mirrors in optoelectronic devices. In this letter we extend that work to the fabrication of high reflectivity GexSi1−x/Si mirrors. Column IV designs are constrained both by the small refractive index between Si and GexSi1−x alloys and the limitations of strained layer epitaxy that can produce misfit dislocations in thick mirror stacks. Despite these limitations, we report on mirrors with reflectivities of over 50% at 1.5 μm. Furthermore, certain mirrors were overgrown with p‐i‐n diodes to demonstrate the feasibility of operation in a vertically illuminated, resonant cavity mode.
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78.66.Db Elemental semiconductors and insulators
68.55.-a Thin film structure and morphology
85.60.Dw Photodiodes; phototransistors; photoresistors
42.79.Bh Lenses, prisms and mirrors

X‐ray characterization of Si δ‐doping in GaAs

L. Hart, M. R. Fahy, R. C. Newman, and P. F. Fewster

Appl. Phys. Lett. 62, 2218 (1993); http://dx.doi.org/10.1063/1.109421 (3 pages) | Cited 18 times

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High‐resolution triple‐axis x‐ray diffractometry has been used to examine the structural properties of a δ‐doped superlattice of sixty periods, each consisting of half a monolayer of Si and 500 Å of GaAs, grown by molecular beam epitaxy (MBE) at 400 °C under an arsenic flux. The measurements indicated that the superlattice was of high structural quality. Using dynamical simulation, it was demonstrated that the period variation was equal to 3%, while the silicon spreading was no greater than 2 monolayers. It was possible to extract this information because of the high‐resolution diffractometer which produced the theoretical line shape and wide dynamic range. Using a simple model, it was deduced that virtually all Si atoms were located on Ga lattice sites.  
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.

Local silicon molecular beam epitaxy with microshadow masks

E. Hammerl and I. Eisele

Appl. Phys. Lett. 62, 2221 (1993); http://dx.doi.org/10.1063/1.109422 (3 pages) | Cited 5 times

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A novel method for the in situ patterning of silicon layers grown by molecular beam epitaxy is investigated. Using microshadow masks deposited directly onto silicon substrate epitaxial mesa patterns can be fabricated. The local growth and the resulting geometrical shape of the mesa structures is studied as a function of the substrate temperature during the MBE process.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology

Porous silicon formation: Morphological stability analysis

Ying Kang and Jacob Jorné

Appl. Phys. Lett. 62, 2224 (1993); http://dx.doi.org/10.1063/1.109423 (3 pages) | Cited 3 times

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Morphological stability analysis for the photoelectrochemical etching of n‐type Si is performed, in which the stability of the back‐illuminated Si‐electrolyte interface is theoretically investigated. Both the transport of holes in the semiconductor and ions in the diffusion layer are considered, together with the electrochemical reaction and surface energy. The roles and the effects of the various parameters, such as applied voltage, dopant concentration, current density, illumination intensity, surface energy, and electrolyte concentration, on the morphology of porous silicon are studied. The results show that porous silicon is formed when the dissolution process is controlled by the supply of holes in the semiconductor, and the density of porous silicon is both material‐ and process‐dependent.
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81.65.-b Surface treatments
82.45.-h Electrochemistry and electrophoresis
82.50.-m Photochemistry

Transient response of lateral photodetectors

E. H. Böttcher, F. Hieronymi, D. Kuhl, E. Dröge, and D. Bimberg

Appl. Phys. Lett. 62, 2227 (1993); http://dx.doi.org/10.1063/1.109424 (3 pages) | Cited 9 times

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A two‐dimensional physical device model for characterizing the transient operation of lateral photodetectors is presented. It is based upon a corpuscular approach where the impulse response is constituted by the superposition of a large number of photocurrent pulses originating from spatially distributed discrete electron‐hole pairs generated by an optical impulse. The motion of photogenerated carriers and the resulting photocurrent pulses in the external circuit are related by Ramo’s theorem which is shown to be fundamental for gaining a correct understanding of the time response of lateral detectors. The accuracy of the predictions obtained from the modeling is underpinned by their excellent agreement with experimental data on the impulse response of InP:Fe/InGaAs:Fe metal‐semiconductor‐metal detectors.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.De Semiconductor-device characterization, design, and modeling
73.50.Pz Photoconduction and photovoltaic effects
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