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3 May 1993

Volume 62, Issue 18, pp. 2155-2289

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Spontaneous spin polarization of ballistic electrons in single‐mode quantum wires due to spin splitting

Gerhard Fasol and Hiroyuki Sakaki

Appl. Phys. Lett. 62, 2230 (1993); http://dx.doi.org/10.1063/1.109425 (3 pages) | Cited 7 times

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We show that a quantum‐wire device with spin splitting can work as an active spin polarizer. Hot electrons in one ‘‘spin’’ subband (e.g., ‘‘spin up’’) may pass such a device with weak electron pair scattering, while electrons in the opposite subband (‘‘spin down’’) may have high conversion probability into the spin‐up subband, resulting in spin polarization of a hot electron beam. Under different circumstances a hot electron beam passing through a single‐mode quantum wire may induce a steady state magnetization of the background electron gas in a section of the wire weakly coupled to the environment.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.10.Bg General formulation of transport theory
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Effect of electron heating on electron capture cross section in very small metal‐oxide‐semiconductor transistors

Z. M. Shi, J.‐P. Miéville, and M. Dutoit

Appl. Phys. Lett. 62, 2233 (1993); http://dx.doi.org/10.1063/1.109426 (3 pages) | Cited 3 times

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The effect of electron heating on random telegraph signals due to oxide traps in deep‐submicron n‐channel MOSFETs is shown. A simple theoretical model gives a good description of the observed results. The mean capture time depends on the local velocity and temperature of channel electrons near the trap. The difference between the forward and reverse mode (source and drain exchanged) provides an estimate of the trap location along the channel.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
73.50.Td Noise processes and phenomena

Inhibition of surface‐related electrical breakdown of long p+‐i‐n+ silicon structures

F. E. Peterkin, P. F. Williams, B. J. Hankla, L. L. Buresh, and S. A. Woodward

Appl. Phys. Lett. 62, 2236 (1993); http://dx.doi.org/10.1063/1.109427 (3 pages) | Cited 1 time

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Semiconductors such as silicon and GaAs appear attractive for use in high voltage devices because of their high bulk dielectric strength. Typically, however, such devices fail at a voltage well below that expected due to a poorly understood, surface‐related breakdown process. In this letter we present empirical results which show that such breakdown of long silicon p+‐i‐n+ devices can be inhibited by the application of weak visible or near‐infrared illumination. These results suggest a technique for avoiding surface flashover in practical high voltage devices, and provide information about the physical mechanisms responsible for initiating flashover.
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72.20.Ht High-field and nonlinear effects
72.80.Ey III-V and II-VI semiconductors
72.40.+w Photoconduction and photovoltaic effects
85.60.Dw Photodiodes; phototransistors; photoresistors

Graded InGaAs/GaAs strained‐layer single quantum well laser

Tae‐Kyung Yoo, Robert Spencer, William J. Schaff, Lester F. Eastman, Ki‐Woong Chung, and Doyeol Ahn

Appl. Phys. Lett. 62, 2239 (1993); http://dx.doi.org/10.1063/1.109428 (3 pages)

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A new graded InxGa(1−x)As/GaAs/AlGaAs strained‐layer single quantum well (QW) laser diode has been proposed and experimentally characterized. Bias‐dependencies of valence subbands and maximum optical gains of the InGaAs QW on the external bias are calculated taking into account the effects of the valence band mixing and intraband relaxation. Electron distributions in the conduction bands at threshold bias are also calculated by solving the Poisson and Schrödinger equation self‐consistently. By a two‐step grading of the InGaAs QW compositions, the higher peak value and smaller full width at half maximum of electron distributions can be obtained around the QW center even at the large external bias. Moreover, the electron‐hole spatial separation is substantially reduced in the graded QW. A graded InxGa(1−x)As/GaAs strained‐layer single QW laser diode with x=0.17–0.33 shows lower threshold current densities by 15% than those of the conventional In0.25Ga0.75As laser.
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42.55.Px Semiconductor lasers; laser diodes
42.60.-v Laser optical systems: design and operation

Electroluminescence in oxygen co‐doped ZnS:TmF3 and ZnS:Tm, Li thin‐film devices

S. H. Sohn and Y. Hamakawa

Appl. Phys. Lett. 62, 2242 (1993); http://dx.doi.org/10.1063/1.109429 (3 pages) | Cited 5 times

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The effects of oxygen co‐doping in ZnS:TmF3 and ZnS:Tm, Li thin‐film electroluminescent devices are reported. Active layers are deposited in oxygen atmosphere at substrate temperatures of 200 and 300 °C. It is found that by oxygen codoping the luminance of ZnS:TmF3 and ZnS:Tm, Li devices increases, and that this phenomenon becomes marked in the films prepared at a higher substrate temperature.
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78.60.Fi Electroluminescence
78.66.Hf II-VI semiconductors
71.55.Gs II-VI semiconductors

Enhancement of zone‐folding effects in the second order response of the [(Si)5/(Ge)5]/(Si0.4Ge0.6)(001) superlattice

Ed Ghahramani and J. E. Sipe

Appl. Phys. Lett. 62, 2245 (1993); http://dx.doi.org/10.1063/1.109430 (3 pages) | Cited 3 times

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We have carried out a full band structure calculation of the second harmonic generation (SHG) coefficient and the linear response function of a [(Si)5/(Ge)5] superlattice (SLS) on a Si0.4Ge0.6 alloy substrate. Our calculation gives the first indication of the magnitude, frequency dependence, and anisotropy of the second order response in this SLS. The ratio of the features due to zone‐folded transitions to those due to bulk‐like transitions is an order of magnitude larger than the same ratio in the linear response. Yet these zone‐folded effects are still very small. Nonetheless, the overall size of the SHG coefficient for this SLS is slightly larger than that of the corresponding SLS on a Si(001) substrate.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Db Elemental semiconductors and insulators
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Auger electron spectroscopy of molecular beam epitaxially grown GaAs surfaces exposed to trimethylgallium

H. Ohno, S. Goto, Y. Nomura, Y. Morishita, A. Watanabe, and Y. Katayama

Appl. Phys. Lett. 62, 2248 (1993); http://dx.doi.org/10.1063/1.109635 (3 pages)

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In situ Auger electron spectroscopy is employed to study the dynamics of the desorption process of carbon and its related species from clean molecular beam epitaxially grown GaAs surfaces exposed to trimethylgallium under the conditions where atomic layer epitaxy takes place by metalorganic molecular beam epitaxy. The direct real time spectroscopic observation of the surfaces by Auger electron spectroscopy shows that, after exposure to trimethylgallium, the initial carbon signal intensity exponentially decreases with an activation energy of 1.3 eV and reaches a steady state level.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Monte Carlo calculation of electron relaxation times in perfect and disordered quantum wire laser structures

Igor Vurgaftman and Jasprit Singh

Appl. Phys. Lett. 62, 2251 (1993); http://dx.doi.org/10.1063/1.109431 (3 pages) | Cited 9 times

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We calculate the electron relaxation times in GaAs quantum wires of 100×100 Å and 200×200 Å cross sections by a Monte Carlo simulation with the inclusion of electron‐phonon and electron‐electron interactions for the wire band structure computed by solving the one‐band Schrödinger equation with and without structural disorder at the wire interface. The electron relaxation time is found to be greater than a hundred picoseconds for the 100×100 Å wire, while it is approximately 10 ps for the wire with the 200×200 Å cross section with the results converging to the case of bulk material for increased wire cross section. The influence of disorder on carrier relaxation in quantum wires is found to be negligible. The unusually slow carrier equilibration process is attributed to the combined effect of the sharply peaked one‐dimensional density of states and the absence of randomizing intrasubband carrier‐carrier scattering processes in quasi‐one‐dimensional systems. The dependence of electron relaxation times on the size of the quantum wire appears to be extremely sensitive.
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73.50.Bk General theory, scattering mechanisms
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
42.55.Px Semiconductor lasers; laser diodes

X‐ray photoelectron spectroscopy study of GaAs surface exposed to a rf hydrogen plasma

C. Debiemme‐Chouvy, D. Ballutaud, J. C. Pesant, and A. Etcheberry

Appl. Phys. Lett. 62, 2254 (1993); http://dx.doi.org/10.1063/1.109432 (2 pages) | Cited 4 times

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Using x‐ray photoelectron spectroscopy analysis, it is shown that hydrogen plasma treatment of the gallium arsenide surface induces a modification of the superficial stoichiometry. The resulting surface composition presents a gallium enrichment and is the same whatever the initial composition. The departure from the stoichiometry increases with the plasma power. After the plasma treatment, the absence of arsenic oxidation and an abnormal gallium suboxidation state is observed. Moreover, these new gallium and arsenic oxidation states are stable when the sample is left in the air.
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81.65.-b Surface treatments
73.20.At Surface states, band structure, electron density of states
79.60.-i Photoemission and photoelectron spectra

Octadecyltrichlorosilane monolayers as ultrathin gate insulating films in metal‐insulator‐semiconductor devices

P. Fontaine, D. Goguenheim, D. Deresmes, D. Vuillaume, M. Garet, and F. Rondelez

Appl. Phys. Lett. 62, 2256 (1993); http://dx.doi.org/10.1063/1.109433 (3 pages) | Cited 38 times

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In order to fabricate metal‐insulator‐semiconductor (MIS) devices with gate insulating films thinner than 5.0 nm, organic monolayers have been grafted on the native oxide layer of silicon wafers. We demonstrate that a single monolayer of octadecyltrichlorosilane with a 2.8 nm thickness allows to fabricate a silicon based MIS device with gate current density as low as 10−8 A/cm2 at 5.8 MV/cm, insulator charge density lower than 1010 cm−2, fast interface state density of the order of 1011 cm−2 eV−1, and dielectric breakdown field as high as 12 MV/cm. Moreover, this insulating film is thermally stable up to 450 °C.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices
73.61.Ph Polymers; organic compounds

Electrical properties of the SiNx/InP interface passivated using H2S

A. Kapila, X. Si, and V. Malhotra

Appl. Phys. Lett. 62, 2259 (1993); http://dx.doi.org/10.1063/1.109434 (3 pages) | Cited 19 times

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Passivation of the electronic defect states at the SiNx/InP interface has been achieved using gaseous H2S treatments of the InP surface. Al/SiNx/InP capacitors, fabricated by depositing silicon nitride films on the H2S‐treated InP, exhibit good capacitance‐voltage (C‐V) characteristics. The SiNx layer is deposited at 200 °C using an electron cyclotron resonance plasma‐enhanced chemical vapor deposition (ECR‐PECVD) technique. A minimum trap density of 3.5×1011 cm−2 eV−1 is estimated using the high‐frequency C‐V characteristics. These devices appear to be more uniform and reproducible than ammonium/phosphorous polysulfide‐passivated SiNx/InP interfaces.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Observation of random‐telegraph noise in resonant‐tunneling diodes

Sze‐Him Ng, Charles Surya, Elliott R. Brown, and Paul A. Maki

Appl. Phys. Lett. 62, 2262 (1993); http://dx.doi.org/10.1063/1.109435 (3 pages) | Cited 7 times

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We report the observation of random‐telegraph noise in GaAs/Al0.4Ga0.6As resonant tunneling diodes. Measurements made on our devices from 57 to 70 K revealed discrete switching events with step heights ranging from 6 to 20 μV. Our studies indicated that the 20‐μV switching sequences correspond to two‐state thermally activated processes involving a single trap. At a bias of −0.4 V, the capture and emission activation energies of this trap are 81 and 51 meV, respectively, implying that the trap is located in the barrier. Our results suggest that the noise arises from transmission coefficient fluctuations due to hopping conduction of carriers through the barrier.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling
73.50.Td Noise processes and phenomena
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Quasiperiodic contrast inhomogeneities induced by clusters in the In0.52Al0.48As/InP interface

F. Peiro, A. Cornet, J. R. Morante, A. Georgakilas, and A. Christou

Appl. Phys. Lett. 62, 2265 (1993); http://dx.doi.org/10.1063/1.109436 (3 pages) | Cited 5 times

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The structure of In0.52Al0.48As films grown on InP (100) by molecular beam epitaxy, at growth temperatures in the range of 530–590 °C, are analyzed by transmission electron microscopy. The existence of contrast inhomogeneities along the 〈010〉 fcc soft directions, the appearance of which depends on the temperature and the distance to the substrate, is reported. It is shown that these contrast irregularities in InAlAs are related directly to the existence of precipitates in the InAlAs/InP interface, whose origin can be found in the formation of an InAs layer under an As‐stabilized InP surface.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)

Photoconductive sampling probe with 2.3‐ps temporal resolution and 4‐μV sensitivity

Joungho Kim, Steven Williamson, John Nees, Shin‐ichi Wakana, and John Whitaker

Appl. Phys. Lett. 62, 2268 (1993); http://dx.doi.org/10.1063/1.109437 (3 pages) | Cited 23 times

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We report on a novel probe technology which is applied to the measurement of high‐speed guided electrical signals. The probe consists of a high‐impedance gate fabricated using an interdigitated electrode structure on semi‐insulating, low‐temperature‐grown GaAs, and its operation is based on the optoelectronic technique of photoconductive sampling. The probe has a dynamic range of ≳106, permitting the linear measurement of short‐duration signals with amplitudes ranging from microvolts up to several volts. Its resistance is 100 MΩ, and its capacitance is less than 0.1 fF, making this probe attractive for noninvasive, external circuit testing of ultrahigh‐speed devices and circuits.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.-q Optoelectronic devices
85.30.De Semiconductor-device characterization, design, and modeling

Gas source molecular beam epitaxy of FeSi2/Si(111) heterostructures

H. Ch. Schäfer, B. Rösen, H. Moritz, A. Rizzi, B. Lengeler, H. Lüth, and D. Gerthsen

Appl. Phys. Lett. 62, 2271 (1993); http://dx.doi.org/10.1063/1.109411 (3 pages) | Cited 13 times

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Epitaxial iron disilicide thin layers have been grown on silicon by gas source molecular beam epitaxy (GSMBE) in the temperature range 450–550 °C. Fe(CO)5 and SiH4 are used as sources for the silicide growth on a heated Si(111) surface. The growth phases are characterized in situ by means of high‐resolution electron energy loss spectroscopy, ultraviolet and x‐ray photoelectron spectroscopies. The formation of an epitaxial metallic γ‐FeSi2 layer at the interface with the silicon substrate is revealed and no complete relaxation of this strained metastable interface layer is observed, as the growth proceeds with the semiconducting equilibrium β‐FeSi2 phase. The coexistence in the GSMBE grown heterostructures of the metallic (CaF2) and semiconducting (orthorhombic) FeSi2 structures is confirmed by cross‐section transmission electron microscopy.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Nq Composition and phase identification
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)

Quality of AlAs‐like and InSb‐like interfaces in InAs/AlSb superlattices: An optical study

J. Spitzer, H. D. Fuchs, P. Etchegoin, M. Ilg, M. Cardona, B. Brar, and H. Kroemer

Appl. Phys. Lett. 62, 2274 (1993); http://dx.doi.org/10.1063/1.109393 (3 pages) | Cited 25 times

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Two short‐period InAs/AlSb superlattices, grown with an AlAs‐like interface and an InSb‐like interface, respectively, were studied with Raman spectroscopy, x‐ray diffraction, and ellipsometry. Our measurements show that the InSb‐like interface grows perfectly pseudomorphically, whereas the sample with the AlAs‐like interface shows indications of relaxation and As interdiffusion. This different interface quality seems to be a fundamental problem, rather than the result of the growth technique.
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68.55.-a Thin film structure and morphology
78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors

Defect generation sensitivity depth profile in buried SiO2 using Ar plasma exposure

A. Stesmans and K. Vanheusden

Appl. Phys. Lett. 62, 2277 (1993); http://dx.doi.org/10.1063/1.109394 (3 pages) | Cited 6 times

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The sensitivity to oxygen‐vacancy defect (E′) generation of buried SiO2 (BOX) layers in separation by implantation of oxygen (SIMOX) structures is studied by electron spin resonance. The E′ generation tool used is exposure to a dc Ar glow discharge that produces E’s predominantly in a surface layer of ≊100 Å thick, reaching local volume densities at the surface up to 8×1019 cm−3. Reoxidation of the layers is observed to reduce this value close to that of regular dry thermal oxide (≥29 times lower). This glow discharge exposure, alternated with step‐by‐step etch back, allowed mapping of the defect generation sensitivity depth profile for the entire buried layer, revealing a fairly uniform sensitivity with a strong decline towards the BOX/substrate interface. The results provide evidence that the buried oxide contains excess Si, exceedingly so near the BOX/substrate interface.
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61.80.Jh Ion radiation effects
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Fabrication and characterization of YBa2Cu3O7 step‐edge junction arrays

W. Reuter, M. Siegel, K. Herrmann, J. Schubert, W. Zander, A. I. Braginski, and P. Müller

Appl. Phys. Lett. 62, 2280 (1993); http://dx.doi.org/10.1063/1.109395 (3 pages) | Cited 16 times

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We investigated one‐dimensional arrays with up to 600 step‐edge Josephson junctions (SEJ) fabricated by pulsed laser deposition of YBa2Cu3O7 (YBCO) films on steep steps in epitaxial LaAlO3 substrates. The steps were prepared by Ar‐ion milling and the YBCO thin films were patterned either by Ar‐ion milling or by an inhibit process. The current‐voltage (I‐V) characteristics and the Josephson emission of a single SEJ show that it consists of two resistively shunted‐junction‐type (RSJ) weak links in series which have different critical currents, IC1 and IC2. The I‐V characteristics of our arrays were also close to the RSJ‐model. The number of series‐connected weak links deduced from the I‐V curves was usually higher than the number of steps. Histograms of the individual weak link ICs showed two peaks at IC1 and IC2. The IC spread was about ±20% to ±40% of these two values. Radiation from arrays was detected and an evidence of phase locking in Josephson junction clusters obtained.
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74.50.+r Tunneling phenomena; Josephson effects
74.81.-g Inhomogeneous superconductors and superconducting systems, including electronic inhomogeneities
74.72.-h Cuprate superconductors
74.78.-w Superconducting films and low-dimensional structures

Hole transport in microcrystalline chlorophyll a

H. Kassi, S. Hotchandani, and R. M. Leblanc

Appl. Phys. Lett. 62, 2283 (1993); http://dx.doi.org/10.1063/1.109396 (3 pages) | Cited 10 times

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In order to study the hole transport in chlorophyll a (Chl a), time‐of‐flight measurements have been performed on Al/Chl a/Au sandwich cells. The hole transients are almost featureless and the transit times have been determined from log‐current‐log time plots. In view of the lack of universality in post‐transit region and the tendency of mobility to decrease with increasing field, as observed from log μ vs √E plots, the hole transport in Chl a has been described in terms of charge transport based on the disorder formalism of Bässler and co‐workers. The decrease of hole mobility with field suggests a strong involvement of off‐diagonal disorder.  
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72.20.Fr Low-field transport and mobility; piezoresistance
72.40.+w Photoconduction and photovoltaic effects
72.80.Le Polymers; organic compounds (including organic semiconductors)

Dielectric loss in thin films of an aromatic polyimide

M. O. Aboelfotoh, C. Feger, A. Castellano, R. Kaufman, and S. Molis

Appl. Phys. Lett. 62, 2286 (1993); http://dx.doi.org/10.1063/1.109397 (3 pages) | Cited 6 times

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The dielectric response of thin aromatic polyimide films with thicknesses ranging from 40 nm to 3 μm has been measured in the frequency range of 104–108 Hz. The dielectric loss shows a frequency‐independent behavior regardless of film thickness, which is attributed to the dipolar response of the dielectric lattice. Film morphology is found to affect the magnitude of the dielectric loss but not its frequency dependence.
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77.22.Gm Dielectric loss and relaxation
77.55.-g Dielectric thin films
68.55.-a Thin film structure and morphology
FREE

Erratum: ‘‘Optical saturation of intersubband absorption in GaAs‐AlxGa1−xAs quantum wells’’ [Appl. Phys. Lett. 53, 116 (1988)]

F. H. Julien, J.‐M. Lourtioz, N. Herschkorn, D. Delacourt, J. P. Pocholle, M. Papuchon, R. Planel, and G. LeRoux

Appl. Phys. Lett. 62, 2289 (1993); http://dx.doi.org/10.1063/1.109643 (1 page) | Cited 10 times

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Abstract Unavailable
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78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
99.10.Cd Errata
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