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10 May 1993

Volume 62, Issue 19, pp. 2301-2447

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Highly nondegenerate four‐wave mixing and gain nonlinearity in a strained multiple‐quantum‐well optical amplifier

Jianhui Zhou, Namkyoo Park, Jay W. Dawson, Kerry J. Vahala, Michael A. Newkirk, Uziel Koren, and Barry I. Miller

Appl. Phys. Lett. 62, 2301 (1993); http://dx.doi.org/10.1063/1.109398 (3 pages) | Cited 14 times

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Highly nondegenerate four‐wave mixing was investigated in a 1.5 μm compressively strained multi‐quantum‐well semiconductor traveling‐wave optical amplifier at detuning frequencies up to 600 GHz. A gain nonlinearity with a characteristic relaxation time of 650 fs was determined from the data, and the nonlinear gain coefficient was estimated to be 4.3×10−23 m3. Dynamic carrier heating is believed to be the major source of nonlinear gain in this device at the wavelengths investigated.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
78.66.Fd III-V semiconductors

Filament formation in a tapered GaAlAs optical amplifier

Lew Goldberg, Marc R. Surette, and David Mehuys

Appl. Phys. Lett. 62, 2304 (1993); http://dx.doi.org/10.1063/1.109399 (3 pages) | Cited 28 times

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Filament formation in a tapered GaAlAs amplifier with an output width of 320 μm is characterized by injecting an input beam with a superimposed sinusoidal intensity modulation (30 μm period, 30% peak‐to‐peak modulation). Strong seeded filamentation of the output near field, and large far field side lobes are observed for powers above approximately 1 W. Time dependent decay of the main far field lobe, characterized by a time constant of several microseconds, is used to separate the effects of localized carrier density variations from the thermal contribution to intensity and phase distortion of the output beam.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Quantum capture limited modulation bandwidth of quantum well, wire, and dot lasers

Sidney C. Kan, Dan Vassilovski, Ta C. Wu, and Kam Y. Lau

Appl. Phys. Lett. 62, 2307 (1993); http://dx.doi.org/10.1063/1.109400 (3 pages) | Cited 28 times

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We investigate the quantum capture limited modulation bandwidths of various lower‐dimensional semiconductor lasers. It is shown that, for buried quantum well, wire, and dot lasers, the maximum bandwidth is proportional to the packing density of the active region. For the quantum wire lasers grown on V‐grooved substrates, the maximum bandwidth is enhanced by the precapture of carriers from three‐dimensional states to two‐dimensional states before the capture into the one‐dimensional states.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Optical gas detection using metal film enhanced leaky mode spectroscopy

M. Osterfeld, H. Franke, and C. Feger

Appl. Phys. Lett. 62, 2310 (1993); http://dx.doi.org/10.1063/1.109401 (3 pages) | Cited 27 times

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Sensors based on fiber optics or optical waveguides are finding increasing interest for applications in aggressive environments, in the vicinity of high electric fields, or in areas where miniaturization is a necessity. Many of these optical sensors utilize interaction of evanescent fields with the environment. If the optical component is made of a polymer, the ability of polymers to ad‐ or absorb vapors can be utilized for the sensing of such vapors. This is based on changes in refractive indices or anisotropy upon interaction with the vapor.  
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
42.79.Pw Imaging detectors and sensors
42.70.Jk Polymers and organics

Dynamic response of short‐cavity semiconductor lasers

F. Jahnke, S. W. Koch, and K. Henneberger

Appl. Phys. Lett. 62, 2313 (1993); http://dx.doi.org/10.1063/1.109402 (3 pages) | Cited 5 times

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The influence of many‐body, carrier‐carrier, and carrier‐photon interaction on the dynamic response of microcavity semiconductor lasers is investigated. It is shown how the switch‐on dynamics is governed by the spectrally resolved gain‐loss compensation. Transient instabilities and relaxation oscillations are discussed and their suppression through spontaneous emission enhancement is demonstrated.
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42.55.Px Semiconductor lasers; laser diodes

Damping of the relaxation resonance in multiple‐quantum‐well lasers by slow interwell transport

A. Hangleiter, A. Grabmaier, and G. Fuchs

Appl. Phys. Lett. 62, 2316 (1993); http://dx.doi.org/10.1063/1.109403 (3 pages) | Cited 20 times

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We present a model for quantum‐well lasers which for the first time provides an explanation for the increased damping of the relaxation resonance observed in these lasers. Slow transport of holes between the individual wells is shown to lead to a strongly inhomogeneous carrier distribution and to increased damping as well as to RC‐like contributions to the modulation response. The model quantitatively explains the differences observed between lasers of varying structure and lasers made from different material systems.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Gibbs free‐energy difference between the glass and crystalline phases of a Ni‐Zr alloy

K. Ohsaka, E. H. Trinh, J. C. Holzer, and W. L. Johnson

Appl. Phys. Lett. 62, 2319 (1993); http://dx.doi.org/10.1063/1.109404 (3 pages) | Cited 7 times

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The heats of eutectic melting and devitrification, and the specific heats of the crystalline, glass, and liquid phases have been measured for a Ni24Zr76 alloy. The data are used to calculate the Gibbs free‐energy difference, ΔGAC, between the real glass and the crystal on an assumption that the liquid‐glass transition is second order. The result shows that ΔGAC continuously increases as the temperature decreases in contrast to the ideal glass case where ΔGAC is assumed to be independent of temperature.
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64.60.Cn Order-disorder transformations
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition

Preparation of coiled carbon fibers by pyrolysis of acetylene using a Ni catalyst and sulfur or phosphorus compound impurity

S. Motojima, I. Hasegawa, S. Kagiya, M. Momiyama, M. Kawaguchi, and H. Iwanaga

Appl. Phys. Lett. 62, 2322 (1993); http://dx.doi.org/10.1063/1.109634 (2 pages) | Cited 35 times

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Coiled carbon fibers were prepared by pyrolysis of acetylene activated using a Ni catalyst and a small amount of impurities at 600–800 °C. It was found that the addition of a small amount of sulfur or phosphorus compound impurities in acetylene was indispensable for the growth of coiled carbon fibers. Among the sulfur compounds used, thiophene was the most effective for growing coiled carbon fibers with uniform coil diameter and producing a high yield (about 50% coils). Similar results were obtained with phosphorus trichloride.  
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81.20.-n Methods of materials synthesis and materials processing
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Electrical properties of cobalt‐zinc ferrites

G. M. Kale and T. Asokan

Appl. Phys. Lett. 62, 2324 (1993); http://dx.doi.org/10.1063/1.109405 (2 pages) | Cited 5 times

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The electrical properties of Co1−xZnxFe2O4 (x=0–1) spinel ferrites were investigated by impedance spectroscopy. The grain‐boundary resistance was found to increase as a function of composition up to x=0.6, and decreases beyond x=0.6. The variation in the bulk resistance and the activation energy as a function of composition is found to exhibit a similar trend whereas the grain resistance appears to be an independent parameter. The observed results suggest that the bulk properties of solid solution spinel ferrites are primarily controlled by the grain‐boundary phase.
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72.80.Ga Transition-metal compounds
61.72.Mm Grain and twin boundaries
85.70.Ge Ferrite and garnet devices

TiNCl formation during low‐temperature, low‐pressure chemical vapor deposition of TiN

Rama I. Hegde, Robert W. Fiordalice, and Philip J. Tobin

Appl. Phys. Lett. 62, 2326 (1993); http://dx.doi.org/10.1063/1.109406 (3 pages) | Cited 7 times

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We report for the first time the existence of the titanium nitride chloride (TiNCl) compound in low‐temperature (400 °C) low‐pressure chemical vapor deposition (LPCVD) TiN films deposited using TiCl4/NH3 chemistry. Thin‐film x‐ray diffraction and Auger electron spectroscopy was used in the film characterization. Physical, chemical, and electrical properties of the resulting low‐temperature LPCVD TiN films are discussed.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Heterogeneous formation of atomic hydrogen in hot‐filament diamond deposition

C. Wolden and K. K. Gleason

Appl. Phys. Lett. 62, 2329 (1993); http://dx.doi.org/10.1063/1.109407 (3 pages) | Cited 14 times

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A two‐dimensional finite element model has been developed for the reactor of W. L. Hsu [Appl. Phys. Lett. 59, 1427 (1991)], focusing on the relative importance of heterogeneous and homogeneous chemistry in the production of atomic hydrogen. Although hot‐filament reactors have been the subject of extensive modeling efforts, most previous work has neglected the impact of the filament on both chemistry and fluid flow. Our calculations show that catalytic activity is responsible for at least 95% of the atomic hydrogen production. In addition, the concentration of atomic hydrogen at the filament is far below thermal equilibrium values. An analysis of experimental data reveals an activation energy of 150 kJ/mol for the filament‐catalyzed reaction. From these measurements, a kinetic expression is developed to explain catalytic production of atomic hydrogen at the surface. Finally, the effect of recombination of hydrogen atoms at the growing surface was examined.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.20.-w Chemical kinetics and dynamics

Pulsed laser deposition of oriented In2O3 on (001) InAs, MgO, and yttria‐stabilized zirconia

E. J. Tarsa, J. H. English, and J. S. Speck

Appl. Phys. Lett. 62, 2332 (1993); http://dx.doi.org/10.1063/1.109408 (3 pages) | Cited 34 times

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Oriented In2O3 films have been grown on (001) InAs, MgO, and YSZ substrates using pulsed laser deposition. The films in each case displayed a cube‐on‐cube orientation relation with respect to the substrate, as determined by in situ RHEED analysis and x‐ray θ–2θ measurements. X‐ray rocking curve full width at half‐maximum values as low as 1.3°, 1.5°, and 0.29° have been obtained for In2O3 layers on InAs, MgO, and YSZ, respectively. An oriented native surface oxide layer was employed to provide an appropriate epitaxial template for aligned growth of In2O3 on InAs substrates, while growths were carried out directly on MgO and YSZ. The not intentionally doped films displayed resistivities on the order of 10−4 Ω cm, with Hall mobilities of 50 cm2/V s measured for In2O3 deposited on YSZ substrates.
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68.55.-a Thin film structure and morphology
81.15.Fg Pulsed laser ablation deposition
77.55.-g Dielectric thin films

Reduction of secondary defect density by C and B implants in GexSi1−x layers formed by high dose Ge implantation in (100) Si

S. Lombardo, F. Priolo, S. U. Campisano, and S. Lagomarsino

Appl. Phys. Lett. 62, 2335 (1993); http://dx.doi.org/10.1063/1.109409 (3 pages) | Cited 15 times

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(100) oriented Si substrates were implanted with 70 keV Ge ions at a dose of 3×1016 cm−2, corresponding to a Ge peak concentration of ≊15 at. %. Annealing at 1100 °C for 10 s forms a large density of secondary defects (dislocation loops). A 30 keV C implant at a dose of 3×1015 cm−2 on the Ge implanted samples suppresses the formation of secondary defects after the annealing. In GexSi1−x layers implanted with 30 keV B at a dose of 2.5×1015 cm−2, a dense dislocation network after annealing is present. Therefore C is much more effective in the suppression of secondary defects than B. In addition, it is shown that good epitaxial quality can be obtained in the heavily B doped GexSi1−x layers amorphizing a 2 μm thick surface layer by high energy Si implants prior to annealing.
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61.72.uf Ge and Si
61.72.Cc Kinetics of defect formation and annealing
61.80.Jh Ion radiation effects
81.15.Np Solid phase epitaxy; growth from solid phases

Anomalous As desorption from InAs(100) 2×4

C. Sasaoka, Y. Kato, and A. Usui

Appl. Phys. Lett. 62, 2338 (1993); http://dx.doi.org/10.1063/1.109410 (3 pages) | Cited 16 times

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Arsenic desorption from the InAs(100) 2×4 surface is investigated through temperature programmed desorption (TPD), isothermal desorption, and reflection high‐energy electron diffraction. TPD area analysis indicates that the As coverage, θAs, of the InAs 2×4 structure is 0.7 monolayers. The As TPD spectrum shows two desorption features; a broad tail from 300 to 400 °C and a distinct peak at 430 °C. The 430 °C peak is well described in terms of a first‐order‐desorption kinetics with a preexponential factor ν of 1.5×1019 s−1. This extremely high ν value explains well the narrow window of optimal molecular beam epitaxy growth conditions for InAs.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Nq Composition and phase identification
79.70.+q Field emission, ionization, evaporation, and desorption

Pulsed laser deposition of thin metallic alloys

Hans‐Ulrich Krebs and Olaf Bremert

Appl. Phys. Lett. 62, 2341 (1993); http://dx.doi.org/10.1063/1.109412 (3 pages) | Cited 41 times

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The pulsed KrF excimer laser ablation was applied for the preparation of thin metallic alloys. Above an ablation threshold of about 5 J/cm2, an explosive evaporation of the target material occurs leading to high deposition rates of up to 3 nm/s and a stoichiometry transfer between the target and the deposited film. The surfaces of the grown amorphous and polycrystalline films are smooth except for a small number of droplets. The pulsed laser ablation was found to be an attractive alternative to other film deposition techniques, not only for high‐temperature superconductors, semiconductors, and insulators, but also for metallic alloys.    
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81.15.Fg Pulsed laser ablation deposition

Regulation of a microcantilever response by force feedback

J. Mertz, O. Marti, and J. Mlynek

Appl. Phys. Lett. 62, 2344 (1993); http://dx.doi.org/10.1063/1.109413 (3 pages) | Cited 93 times

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A feedback mechanism is used to control the forces incident on a mechanical microcantilever as a function of the monitored cantilever motion. The control is effected by modifying the intensity of an auxiliary laser beam that generates a thermally induced stress. The feedback is designed to reduce the effective resonance quality factor of the cantilever. The resultant regulation of the cantilever motion is shown to improve the measurement dynamics in atomic force microscopy, without significantly degrading the signal to noise ratio.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
68.35.Ja Surface and interface dynamics and vibrations
07.07.Tw Servo and control equipment; robots
65.40.De Thermal expansion; thermomechanical effects

Hall effect measurements on boron‐doped, highly oriented diamond films grown on silicon via microwave plasma chemical vapor deposition

B. R. Stoner, Chien‐teh Kao, D. M. Malta, and R. C. Glass

Appl. Phys. Lett. 62, 2347 (1993); http://dx.doi.org/10.1063/1.109414 (3 pages) | Cited 39 times

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A highly oriented, (100) textured diamond film was grown on a Si substrate, followed by the deposition of an epitaxial boron‐doped layer for electrical characterization. Temperature‐dependent Hall effect measurements were performed between 180 and 440 K. The 165 cm2/V⋅s hole mobility measured at room temperature is approximately five times greater than the highest reported mobilities for polycrystalline diamond. The relative improvement in the electronic quality of diamond films grown on Si, due to the reduction of misorientation and grain boundary angles, has been demonstrated. X‐ray diffraction pole measurements were performed on the (100) oriented film in order to quantify the degree of misorientation.
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73.61.Cw Elemental semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Direct measurement of size fluctuation in reverse‐mesa etched quantum wire structures by the atomic force microscope

M. Notomi, M. Nakao, and T. Tamamura

Appl. Phys. Lett. 62, 2350 (1993); http://dx.doi.org/10.1063/1.109415 (3 pages) | Cited 3 times

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By means of atomic force microscopy, we have directly measured, for the first time, size fluctuations in InGaAs/InP quantum wire structures fabricated by e‐beam lithography and reverse‐mesa wet etching. Based on a statistical analysis of the measured data, we discuss the standard deviation of the lateral size of wire structures. The results clearly indicate that the size fluctuations in the wire patterns are predominantly small compared to those in the original mask patterns. This is attributed to the formation of crystallographic facet during the reverse‐mesa wet etching.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
81.65.-b Surface treatments
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Silicon atomic layer growth controlled by flash heating in chemical vapor deposition using SiH4 gas

Junichi Murota, Masao Sakuraba, and Shoichi Ono

Appl. Phys. Lett. 62, 2353 (1993); http://dx.doi.org/10.1063/1.109416 (3 pages) | Cited 14 times

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The separation between surface adsorption and reaction of SiH4 on a Si substrate has been investigated by heating the surface with a Xe flash lamp in an ultraclean low‐pressure environment. About 0.4 atomic‐layer epitaxy per flash‐lamp light shot was observed on Si(100) at a substrate temperature of 385 °C and at SiH4 partial pressure of 500 Pa. The dependencies of SiH4 surface coverage on the SiH4 partial pressure and shot‐to‐shot time interval are expressed by the Langmuir adsorption type equation, assuming that the total adsorption site density is equal to the surface atom density.  
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.50.-m Photochemistry

C54‐TiSi2 formed by direct high current Ti‐ion implantation

D. H. Zhu, K. Tao, F. Pan, and B. X. Liu

Appl. Phys. Lett. 62, 2356 (1993); http://dx.doi.org/10.1063/1.109417 (3 pages) | Cited 19 times

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We report, in this letter, the formation of TiSi2 by direct Ti‐ion implantation into silicon wafers using a metal vapor vacuum arc ion source. Implantation was conducted by 80 KeV Ti ions to a dose of 5×1017/cm2 with various ion current densities. When the ion current density exceeded 100 μA/cm2, the equilibrium TiSi2 of the C54 structure was uniquely formed. Additional evidence of the formation of C54‐TiSi2 was given by the resistivity measurements, i.e., the sheet resistivity was below 3.0 Ω/☒. The formation mechanism is also discussed in terms of the beam heating effect during implantation.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.80.Jh Ion radiation effects
73.40.Cg Contact resistance, contact potential

Carbon doping in GaAs layers grown with trimethylgallium and solid arsenic in a mixture of hydrogen and nitrogen

R. Peña‐Sierra, A. Escobosa, and V. M. Sanchez‐R.

Appl. Phys. Lett. 62, 2359 (1993); http://dx.doi.org/10.1063/1.109389 (3 pages) | Cited 5 times

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Carbon doped GaAs epitaxial layers have been grown using solid arsenic and trimethylgallium. Carbon incorporation, proceeding from the organic radicals, was found to be dependent on the hydrogen partial pressure. The latter was fixed by the introduction of nitrogen in the carrier gas. Controlled p‐doping between 1016 and 1221 cm−3 has been obtained by adjusting the composition of the carrier gas. The growth rate of the layers was found to be reduced by the introduction of nitrogen. Mirrorlike surfaces were obtained if at least 2% hydrogen was mixed in the carrier gas, but only polycrystalline films could be grown in a pure nitrogen atmosphere.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Nanometer scale fabrication in mercury cadmium telluride using methane/hydrogen electron cyclotron resonance microwave plasmas

C. R. Eddy, E. A. Dobisz, C. A. Hoffman, and J. R. Meyer

Appl. Phys. Lett. 62, 2362 (1993); http://dx.doi.org/10.1063/1.109390 (3 pages) | Cited 12 times

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The fabrication of nanometer scale features in the narrow gap, compound semiconductor mercury cadmium telluride has been demonstrated through the application of e‐beam lithography and reactive ion etching with an electron cyclotron resonance (ECR) microwave generated methane/hydrogen plasma. The effects of methane concentration, substrate bias, total pressure, and substrate position with respect to the ECR condition on etch rate, anisotropy, and overall etch performance have been examined. The optimized process resulting from these studies has produced the first mercury‐based nanostructures consisting of 30–60 nm features with sidewall angles of 88°.
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81.65.-b Surface treatments
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Water trapping of point defects in interlayer SiO2 films and its contribution to the reduction of hot‐carrier degradation

Jun‐ichi Takahashi, Katsuyuki Machida, Nobuhiro Shimoyama, and Kazusige Minegishi

Appl. Phys. Lett. 62, 2365 (1993); http://dx.doi.org/10.1063/1.109391 (2 pages) | Cited 1 time

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The water‐blocking effect of plasma chemical vapor deposition (CVD) SiO2 film is investigated. Using electron spin resonance measurements, point defects in the electron cyclotron resonance (ECR) plasma CVD SiO2 used in this work can be identified as dangling bonds belonging to Si atoms. The defect density is reduced by capping water‐containing film on it, suggesting that the defect is capable of trapping water. The hot‐carrier degradation in a metal‐oxide‐semiconductor (MOS) device is successfully prevented when ECR plasma CVD SiO2 is used as a water‐blocking layer that keeps water in the overlayer from diffusing to the gate oxide. This result indicates that ECR plasma CVD SiO2 effectively blocks water due to the water trapping ability of the Si dangling bonds.
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61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
61.72.J- Point defects and defect clusters
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices

Photoemission spectroscopy of Al0.27Ga0.73As:As photodiodes

D. T. McInturff, J. M. Woodall, A. C. Warren, N. Braslau, G. D. Pettit, P. D. Kirchner, and M. R. Melloch

Appl. Phys. Lett. 62, 2367 (1993); http://dx.doi.org/10.1063/1.109392 (2 pages) | Cited 3 times

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We report on photoemission measurements of MBE‐grown Al0.27Ga0.73As p‐i‐n structures in which the optically active insulating layers contain arsenic precipitates (Al0.27Ga0.73As:As). Al0.27Ga0.73As:As layers were formed by low temperature growth of Al0.27Ga0.73As followed by a high temperature anneal. GaAs layers grown in this way have been reported to be sensitive to subband‐gap light. A Fowler plot constructed from an internal photoemission measurement gave a barrier height of 0.93 eV. We compare this result with the barrier height of arsenic in GaAs that was found to be 0.7 eV using the same structure and measurement scheme. This result demonstrates that the barrier height of embedded metallic arsenic clusters in AlxGa1−xAs is consistent with the heterostructure conduction band offset and can be selected by changing the composition of the host material.
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73.30.+y Surface double layers, Schottky barriers, and work functions
79.60.Jv Interfaces; heterostructures; nanostructures
73.61.Ey III-V semiconductors
85.60.Dw Photodiodes; phototransistors; photoresistors

Gas‐source molecular beam epitaxial growth, characterization, and light‐emitting diode application of InxGa1−xP on GaP(100)

T. P. Chin, J. C. P. Chang, K. L. Kavanagh, C. W. Tu, P. D. Kirchner, and J. M. Woodall

Appl. Phys. Lett. 62, 2369 (1993); http://dx.doi.org/10.1063/1.109367 (3 pages) | Cited 19 times

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Highly lattice‐mismatched InxGa1−xP (x≤0.38) layers were grown on GaP substrates by gas‐source molecular beam epitaxy. A relatively thin, compositionally linear‐graded buffer layer was used to reduce the number of threading dislocations. Studies by double‐crystal x‐ray diffraction and transmission electron microscopy show this buffer layer to be 97% strain‐relaxed along both 〈110〉 directions with dislocations well confined within the graded buffer and the substrate. Threading dislocation densities in the top layers were less than 1×107 cm−2. Room‐temperature photoluminescence, ranging from 560 to 600 nm, is achieved. Heterojunction p‐i‐n diodes emitting at 560 nm at 300 K exhibit good rectifying and reverse breakdown characteristics.  
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
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