Oriented In2O3 films have been grown on (001) InAs, MgO, and YSZ substrates using pulsed laser deposition. The films in each case displayed a cube‐on‐cube orientation relation with respect to the substrate, as determined by in situ RHEED analysis and x‐ray θ–2θ measurements. X‐ray rocking curve full width at half‐maximum values as low as 1.3°, 1.5°, and 0.29° have been obtained for In2O3 layers on InAs, MgO, and YSZ, respectively. An oriented native surface oxide layer was employed to provide an appropriate epitaxial template for aligned growth of In2O3 on InAs substrates, while growths were carried out directly on MgO and YSZ. The not intentionally doped films displayed resistivities on the order of 10−4 Ω cm, with Hall mobilities of 50 cm2/V s measured for In2O3 deposited on YSZ substrates.