APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Next Issue

4 Jan 1993

Volume 62, Issue 1, pp. 1-112

Page 2 of 2 Pages Previous Page | Jump to Page

Diffusion of Fe in InP via the kick‐out mechanism

H. Zimmermann, U. Gösele, and T. Y. Tan

Appl. Phys. Lett. 62, 75 (1993); http://dx.doi.org/10.1063/1.108832 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
The diffusion of iron in indium phosphide is found to proceed via the kick‐out diffusion mechanism. A Fe diffusion profile in InP available from the literature is simulated using the complete set of three partial differential equations for the kick‐out mechanism. A value for the contribution of indium self‐interstitials to the self‐diffusion coefficient of InP is extracted and found to be much smaller than the known self‐diffusion coefficient determined from indium tracer diffusion measurements. Possible reasons for the observed difference are discussed. Furthermore, an analogy of diffusion in InP to diffusion in GaAs is suggested.
Show PACS
66.30.J- Diffusion of impurities
66.30.Lw Diffusion of other defects
61.72.uj III-V and II-VI semiconductors

Time‐resolved measurements of carrier recombination in experimental semiconductor‐doped glasses: Confirmation of the role of Auger recombination

M. Ghanassi, M. C. Schanne‐Klein, F. Hache, A. I. Ekimov, D. Ricard, and C. Flytzanis

Appl. Phys. Lett. 62, 78 (1993); http://dx.doi.org/10.1063/1.108833 (3 pages) | Cited 50 times

Full Text: | Download PDF

Show Abstract
Using three different time‐resolved techniques: degenerate four wave mixing, nonlinear absorption, and luminescence, we show that, for our CdSxSe1−x‐doped glasses, under high excitation conditions, Auger recombination is the dominant recombination process. This explains the broad range of luminescence lifetimes previously reported. After photodarkening, we also observe a reduction in the nonradiative lifetime.
Show PACS
78.47.-p Spectroscopy of solid state dynamics
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Optical properties of GaP/AlP short‐period superlattices grown by gas source molecular beam epitaxy

K. Asami, H. Asahi, T. Watanabe, M. Enokida, S. Gonda, and Sg. Fujita

Appl. Phys. Lett. 62, 81 (1993); http://dx.doi.org/10.1063/1.108779 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
Optical properties of (GaP)m/(AlP)n superlattices (SLs), with m+n=14, grown on GaP(001) by gas source molecular beam epitaxy have been studied by photoluminescence (PL), electroreflectance (ER), and optical reflectance. The dependence of the PL peak energies and the relative intensity on the monolayer number of AlP is in agreement with those theoretically predicted for the case of type II band alignment of GaP/AlP SLs. The refractive index of GaP/AlP SLs has been studied for the first time and compared with that of an AlGaP alloy. The refractive index calculated for an AlGaP alloy using a single‐effective‐oscillator model is consistent with the experimentally obtained results.
Show PACS
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Excitation and quenching of Yb intra‐4f‐shell luminescence in InP0.93As0.07

A. Kozanecki, K. Karpinska, and Z. Kalinski

Appl. Phys. Lett. 62, 84 (1993); http://dx.doi.org/10.1063/1.108780 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
Photoluminescence excitation (PLE) experiments on Yb3+ in InP0.93As0.07 has been performed for the first time. The PLE spectra were measured at 4.2, 42, and 70 K. At each temperature the most efficient luminescence of Yb was achieved with the excitation wavelength tuned to an energy level located at a depth of 28±2 meV in the band gap, which we assign to an axial Yb‐P3As center. It has been shown that the 4f‐shell emission is thermally deactivated with a characteristic energy of 115±10 meV (190±10 meV in a reference InP:Yb sample), equal to the difference between the band gap and the 2F5/2‐2F7/2 transition energy, thereby confirming dissociation of the excited state of Yb3+ by phonon absorption.
Show PACS
71.55.Eq III-V semiconductors
78.55.Cr III-V semiconductors

Surface recombination in dry etched AlGaAs/GaAs double heterostructure p‐i‐n mesa diodes

B. Corbett and W. M. Kelly

Appl. Phys. Lett. 62, 87 (1993); http://dx.doi.org/10.1063/1.108781 (3 pages) | Cited 14 times

Full Text: | Download PDF

Show Abstract
We have measured the surface recombination in reactive ion etched mesas in an AlGaAs/GaAs p‐i‐n double heterostructure using the size dependence of the current density versus voltage characteristic. The recombination current is dependent on processing due to surface oxide formation. The surface recombination of the oxidized surface is independent of the crystal axis. The recombination current can be reduced by removal of the oxide and sulfur passivation which protects the surface from further oxidation.
Show PACS
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.20.At Surface states, band structure, electron density of states

Electron paramagnetic resonance study of the two‐dimensional electron gas in Ga1−xAlxSb/InAs single quantum wells

H. J. von Bardeleben, Y. Q. Jia, M. O. Manasreh, and C. E. Stuz

Appl. Phys. Lett. 62, 90 (1993); http://dx.doi.org/10.1063/1.108782 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
The Shubnikov–de Haas oscillations of the two‐dimensional electron gas in semimetallic undoped Ga1−xAlxSb/InAs single quantum wells with compositions x=0.1,0.2,0.5,0.8,1.0 are studied by X‐band electron paramagnetic resonance spectroscopy in the 4–20 K temperature range. The thermal equilibrium carrier concentrations vary from 4×1011 cm−2 for x=0.2 to 1×1012 cm−2 for x=1.0; from the temperature dependence of the Shubnikov–de Haas oscillations amplitudes in the 1–2 T magnetic field range the effective mass is determined to 0.026m0. Photoexcitation, with a low‐energy threshold of 0.7 eV, gives rise to a negative persistent photoconductivity (NPPC) for alloy compositions x≥0.2; no NPPC is observed for x=0.1.
Show PACS
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
76.30.Pk Conduction electrons

Photovoltaic and photoconductive dual‐mode operation GaAs quantum well infrared photodetector for two‐band detection

Y. H. Wang, Sheng S. Li, and Pin Ho

Appl. Phys. Lett. 62, 93 (1993); http://dx.doi.org/10.1063/1.108783 (3 pages) | Cited 20 times

Full Text: | Download PDF

Show Abstract
A new photoconductive (PC) and photovoltaic (PV) dual‐mode operation quantum well infrared photodetection (DM‐QWIP) using an enlarged GaAs (110 Å) quantum well and enlarged Al0.25Ga0.75As (875 Å) barrier layer has been developed for two‐color intersubband detection. The detection scheme uses transitions from the ground‐state and the first excited‐state inside the enlarged GaAs quantum well to the continuum states slightly above the AlGaAs barrier layers. The detectivity Dλ∗ for the PV mode was found to be 1.5×109√Hz/ W at the peak response wavelength λp=7.7 μm and T=77 K, while the values of Dλ∗ for the PC mode were found to be 2×1010, 1×1010 cm√Hz/W for Vb=1,2 V at λp=12 μm and T=77 K, respectively.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Pz Photoconduction and photovoltaic effects

Single transistor static memory cell: Circuit application of a new quantum transistor

J. Chen, C. H. Yang, R. A. Wilson, and C. E. C. Wood

Appl. Phys. Lett. 62, 96 (1993); http://dx.doi.org/10.1063/1.108784 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
An experimental realization and application of a new quantum transistor is reported herein. The conduction mechanism is a resonant‐tunneling process between regions of two‐dimensional density of states. As a result, the transistor displays new current‐voltage characteristics. A static memory cell using a single transistor is demonstrated.
Show PACS
85.30.Tv Field effect devices
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Similarity of scanning tunneling microscopy and atomic force microscopy images of YBa2Cu3O7 thin‐film spiral growth patterns

James R. Sheats and Paul Merchant

Appl. Phys. Lett. 62, 99 (1993); http://dx.doi.org/10.1063/1.108785 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
The surface morphology of highly oriented c‐axis YBa2Cu3O7 films grown by off‐axis sputtering on MgO has been examined by scanning tunneling microscopy (STM) and atomic force microscopy (AFM) at room temperature. Spiral growth patterns were well resolved by both techniques, and the shape of the structures is qualitatively and semiquantitatively similar. The terraces tend to be uneven, with troughs near the steps. The mean height of the steps is close to a multiple of the unit cell, but individual step heights are often not. We conclude that the observed surface topography is not artifactual. The YBa2Cu3O7 appears to be covered by a thin layer (of unknown composition or structure) whose thickness may vary by several Å, and whose electrical properties are temperature dependent.
Show PACS
81.15.Cd Deposition by sputtering
74.78.-w Superconducting films and low-dimensional structures

Gas‐phase oxidation of copper during laser ablation of YBa2Cu3O7−δ in different oxidizing ambients

C. E. Otis, A. Gupta, and B. Braren

Appl. Phys. Lett. 62, 102 (1993); http://dx.doi.org/10.1063/1.108824 (3 pages) | Cited 20 times

Full Text: | Download PDF

Show Abstract
The gas‐phase production of CuO during ablation of a YBa2Cu3O7−δ target in the presence of three different oxidizer background gases: oxygen (O2), nitrous oxide (N2O), and nitrogen dioxide (NO2), has been monitored using laser‐induced fluorescence. The oxides of nitrogen are found to be much more efficient than oxygen in the production of CuO, with the order of reactivity being O2<N2O<NO2. In general for all the reactant gases, and independent of the ablation laser wavelength (193 and 308 nm), the CuO concentration has been observed to initially increase with increasing background gas pressure to reach a maximum before decreasing again to negligible levels at higher pressures. The rate of increase in the CuO concentration and its subsequent decrease with pressure, while being dependent on the nature of the oxidizer gas, is also very sensitive to the laser fluence used for ablation. The results are discussed in terms of the reaction energetics and the known dynamics of other gas‐phase metal oxidation reactions.
Show PACS
81.15.Fg Pulsed laser ablation deposition
82.30.Nr Association, addition, insertion, cluster formation
74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors

In situ growth of superconducting YBa2Cu3O7−x thin films by a hot‐wall sputtering process

R. J. Lin and L. J. Chen

Appl. Phys. Lett. 62, 105 (1993); http://dx.doi.org/10.1063/1.108825 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
YBa2Cu3O7−x (YBCO) superconducting thin films with Tc of 89 K and Jc of 2.7×106 A/cm2 at 77 K, zero field were prepared by a modified high pressure (1.5 Torr) dc planar diode sputtering process. The design and construction of the simple, economic hot‐wall sputtering system which has been achieved in growing high‐quality YBCO films on (001)MgO, (001)LaAlO3, and (001)YSZ substrates are reported.
Show PACS
81.15.Cd Deposition by sputtering
74.78.-w Superconducting films and low-dimensional structures

Directionally alternating domain wall propagation in bistable amorphous wires

C. Gómez‐Polo, M. Vázquez, and D.‐X. Chen

Appl. Phys. Lett. 62, 108 (1993); http://dx.doi.org/10.1063/1.108826 (2 pages) | Cited 14 times

Full Text: | Download PDF

Show Abstract
For iron‐rich magnetostrictive bistable amorphous wires made by the in water quenching technique, the domain wall propagation changes direction after each magnetization reversal. This unique behavior suggests that the reverse‐domain walls in the propagation rear end are pinned more tightly than those in the front end, which then becomes the starting end for the next magnetic reversal. The difference in the pinning strength between both ends is not ascribed to the aftereffect but may be due to different reverse domain structures therein.
Show PACS
75.50.Kj Amorphous and quasicrystalline magnetic materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.60.Ch Domain walls and domain structure

Microwave gap solitons and bistability in magnetostatic periodic structures

M. Dragoman and D. Jäger

Appl. Phys. Lett. 62, 110 (1993); http://dx.doi.org/10.1063/1.108828 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
The existence of bistability, gap solitons, and self‐localized solitons in a magnetostatic periodic structure are predicted. The very low threshold power necessary for the observation of such phenomenas at microwave frequencies makes these structures very attractive for microwave signal processing.
Show PACS
85.70.-w Magnetic devices
41.20.Jb Electromagnetic wave propagation; radiowave propagation
75.70.-i Magnetic properties of thin films, surfaces, and interfaces
Page 2 of 2 Pages Previous Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close