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11 Jan 1993

Volume 62, Issue 2, pp. 115-206

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Waveguiding in substrate supported and freestanding films of insoluble conjugated polymers

Silvia Mittler‐Neher, Akira Otomo, George I. Stegeman, Charles Y.‐C. Lee, Rajeev Mehta, Ashwini K. Agrawal, and Samson A. Jenekhe

Appl. Phys. Lett. 62, 115 (1993); http://dx.doi.org/10.1063/1.109342 (3 pages) | Cited 8 times

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We demonstrate that waveguiding is possible in substrate supported and freestanding films of insoluble conjugated polymers. Photoresist gratings were used to couple 1.06–1.53 μm radiation into the waveguides allowing the refractive indices, the birefringence, and the linear losses to be measured.
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42.79.Gn Optical waveguides and couplers
78.66.Qn Polymers; organic compounds

Multilayer, nonlinear antiresonant waveguides for surface emitted optical mixing

R. Normandin, H. Dai, S. Janz, A. Delage, J. Brown, and F. Chatenoud

Appl. Phys. Lett. 62, 118 (1993); http://dx.doi.org/10.1063/1.109343 (3 pages) | Cited 8 times

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A multilayered core nonlinear antiresonant reflecting optical waveguide (NARROW) was used to generate surface emitted frequency doubled light. High efficiencies were obtained with the NARROW while simultaneously keeping optimum antiresonant conditions at the fundamental wavelength.
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42.79.Gn Optical waveguides and couplers
42.82.Et Waveguides, couplers, and arrays
42.81.Qb Fiber waveguides, couplers, and arrays

Polarization insensitive semiconductor laser amplifiers with tensile strained InGaAsP/InGaAsP multiple quantum well structure

M. Joma, H. Horikawa, C. Q. Xu, K. Yamada, Y. Katoh, and T. Kamijoh

Appl. Phys. Lett. 62, 121 (1993); http://dx.doi.org/10.1063/1.109344 (2 pages) | Cited 30 times

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Data on semiconductor laser amplifiers with a small tensile strain in the wells of multiple quantum well structures are presented. Semiconductor amplifiers with a small strain of 0.2% exhibit polarization insensitive characteristics with a signal gain of 15 dB in the 1.5 μm wavelength range. The enhancement of TM mode gain due to tensile strain is studied by measuring the dependence of amplified spontaneous emission spectra on device length and tensile strain.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.66.Fd III-V semiconductors

Efficient, single‐axial mode oscillation of a beta barium borate optical parametric oscillator pumped by an excimer laser

Gordon Robertson, Angus Henderson, and Malcolm H. Dunn

Appl. Phys. Lett. 62, 123 (1993); http://dx.doi.org/10.1063/1.109345 (3 pages) | Cited 5 times

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Intracavity etalons have been used to obtain single axial mode oscillation of a beta barium borate optical parametric oscillator pumped at 308 nm by a XeCl excimer laser. Two high finesse etalons were sufficient to select a single axial mode of the resonant signal wave over a tuning range 400–560 nm with the increase in oscillation threshold due to etalon insertion being kept below 1.5 times. Addition of a grating enabled single axial mode oscillation to be maintained out to degeneracy (616 nm).  
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Nv Optical frequency converters

Two‐photon absorption and nonresonant nonlinear index of refraction in the intersubband transitions in the quantum wells

J. B. Khurgin and S. Li

Appl. Phys. Lett. 62, 126 (1993); http://dx.doi.org/10.1063/1.109346 (3 pages) | Cited 15 times

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A simple theory for the two‐photon intersubband absorption and, associated with it, nonlinear refraction in multiple quantum wells (QWs) is developed. Using it, the third‐order nonlinear susceptibility is evaluated for QWs of different shapes. It is shown that χ(3) of as much as 10−7 esu can be achieved below the two‐photon resonance where the absorption is small. Thus, it is preferable to use multiple QWs in nonlinear devices at frequencies less than half of the intersubband frequency.  
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78.66.Fd III-V semiconductors
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Metal‐semiconductor‐metal photodetector with integrated Fabry–Perot resonator for wavelength demultiplexing high bandwidth receivers

U. Prank, M. Mikulla, and W. Kowalsky

Appl. Phys. Lett. 62, 129 (1993); http://dx.doi.org/10.1063/1.109347 (2 pages) | Cited 5 times

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Surface operating metal‐semiconductor‐metal photodetectors with a monolithically integrated asymmetrical Fabry–Perot resonator are presented. Because of the low capacitance of the planar electrode configuration, frequency limits exceeding 35 GHz can easily be obtained. Wavelength demultiplexing of closely spaced channels is achieved by an integrated Fabry–Perot resonator. An optical bandwidth of 1.0 nm and a contrast ratio exceeding 10:1 are demonstrated.  
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.82.Bq Design and performance testing of integrated-optical systems
85.60.Gz Photodetectors (including infrared and CCD detectors)

Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures

I. Schnitzer, E. Yablonovitch, C. Caneau, and T. J. Gmitter

Appl. Phys. Lett. 62, 131 (1993); http://dx.doi.org/10.1063/1.109348 (3 pages) | Cited 129 times

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Optically thin AlGaAs/GaAs/AlGaAs double heterostructures, (5000 Å), are floated off their substrates by the epitaxial liftoff technique and mounted on various high reflectivity surfaces. From the absolute photoluminescence intensity, we measure internal and external quantum efficiencies of 99.7% and 72%, respectively. High spontaneous emission quantum efficiency, is important for photon number squeezed light, diode lasers, single‐mode light‐emitting‐diodes, optical interconnects, and solar cells.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors

Fourier transform diagnostics of gaseous species during microwave assisted diamond deposition

A. Campargue, M. Chenevier, L. Fayette, B. Marcus, M. Mermoux, and A. J. Ross

Appl. Phys. Lett. 62, 134 (1993); http://dx.doi.org/10.1063/1.109349 (3 pages) | Cited 17 times

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High resolution Fourier transform spectra of the microwave plasma used for diamond deposition has been obtained in the 3 μm range. The results show that methane is nearly totally dissociated in the plasma. The recombination of the products of dissociation gives mostly acetylene and methane which have been detected 20 cm downstream.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.80.Pi High-frequency and RF discharges

Crystallization on supercooled liquid in metallic Zr‐Cu‐Al glasses

Daisuke Kawase, An Pang Tsai, Akihisa Inoue, and Tsuyoshi Masumoto

Appl. Phys. Lett. 62, 137 (1993); http://dx.doi.org/10.1063/1.109350 (3 pages) | Cited 19 times

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Crystallization behaviors are isothermally examined on supercooled‐liquid and amorphous states in metallic Zr‐Al‐Cu glasses using differential scanning calorimetry. On the basis of a kinetic analysis, it is examined that the crystallization occurs with a zero nucleation rate below the glass transition temperature Tg and a nearly steady‐state nucleation rate above Tg. Arrhenius relation between effective time lag τ of nucleation and isothermal temperature appears as a curvature for alloys revealing a wide supercooled liquid region and a straight line for alloys without wider supercooled‐liquid region. The differences are attributed to the effects of viscosity on nucleation at supercooled liquid. The difference in morphology during crystallization between amorphous and supercooled‐liquid states was also confirmed.
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61.50.Ks Crystallographic aspects of phase transformations; pressure effects
64.70.K- Solid-solid transitions
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
81.30.Bx Phase diagrams of metals, alloys, and oxides

Crystallographic tilting resulting from nucleation limited relaxation

F. K. LeGoues, P. M. Mooney, and J. O. Chu

Appl. Phys. Lett. 62, 140 (1993); http://dx.doi.org/10.1063/1.109351 (3 pages) | Cited 38 times

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We have measured the crystallographic tilt in thick relaxed Si0.7Ge0.3 layers grown on vicinal (001) Si substrates, with and without a step graded intermediate layer, as a function of the angle of miscut away from the exact (001) surface. In both cases, the tilt angle has the same azimuthal orientation as the miscut, but is opposite in sign, and varies linearly with the angle of miscut. The tilt is significantly larger for samples with intermediate graded layers, reaching 0.6° for an angle of miscut of 2°. We interpret these data by noting that relaxation of layers grown on top of a compositionally graded buffer occurs by a nucleation limited mechanism, whereas relaxation in samples grown without graded buffers is glide limited. The miscut affects the activation energy of nucleation, which is an exponential effect, while it linearly changes the glide force applied on dislocations.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Evolution of monolayer terrace topography on (100) GaAs annealed under an arsine/hydrogen ambient

J. E. Epler, T. A. Jung, and H. P. Schweizer

Appl. Phys. Lett. 62, 143 (1993); http://dx.doi.org/10.1063/1.109352 (3 pages) | Cited 15 times

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The topographical evolution of the (100) GaAs surface annealed under an arsine/hydrogen ambient is studied by in situ orientation‐resolved light scattering and ex situ atomic force microscopy (AFM). The light scattering system provides real‐time monitoring of the magnitude and crystal orientation of topographical features of 0.3 μm scale. The AFM images of the GaAs surface, quenched at various annealing temperatures, vividly depict the randomly oriented high density monolayer steps evolving into an atomically smooth terracelike structure.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.-b Surface treatments

Paramagnetic resonance of platinum ions in PbTiO3 single crystals

W. L. Warren, B. A. Tuttle, B. N. Sun, Y. Huang, and D. A. Payne

Appl. Phys. Lett. 62, 146 (1993); http://dx.doi.org/10.1063/1.109353 (3 pages) | Cited 10 times

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Optical excitation of trivalent platinum (5d7, t6e) ions in lead titanate single crystals have been observed for the first time by electron paramagnetic resonance (EPR). The g and hyperfine coupling A tensors were found to be axial: g∥=1.938, g⊥=2.478, A∥=0.0164 cm−1, and A⊥=0.0324 cm−1. Analysis of the EPR spectra using crystal field theory indicates that the Pt+3 ions are in tetragonally distorted (elongated) octahedral sites, strongly suggesting that they substitute for the central Ti+4 ions in the perovskite lattice.
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76.30.He Platinum and palladium group (4d and 5d) ions and impurities (Zr-Ag and Hf-Au)
71.55.Ht Other nonmetals

Analysis of epitaxial GaxIn1−xAs/InP and AlyIn1−yAs/InP interface region by high resolution x‐ray diffraction

C. Giannini, L. Tapfer, E. Tournié, Y. H. Zhang, and K. H. Ploog

Appl. Phys. Lett. 62, 149 (1993); http://dx.doi.org/10.1063/1.109354 (3 pages) | Cited 7 times

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A detailed strain analysis of high resolution x‐ray diffraction patterns taken from GaxIn1−xAs and AlyIn1−yAs layers grown lattice matched on (001) InP substrates shows the existence of distinct interface regions. Our dynamical diffraction model allows us to detect buried interface layers with submonolayer resolution and differences in composition of less than 1% from the rest of the epilayer. Comparison between experimental and theoretical rocking curves reveals that the interface region between epilayer and substrate comprises 2 monolayers InAs plus GaxIn1−xAs (or AlyIn1−yAs) interlayer with different group III element ratios.
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68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.05.cf X-ray scattering (including small-angle scattering)
61.05.cj X-ray absorption spectroscopy: EXAFS, NEXAFS, XANES, etc.

Hetero‐nipi band filling modulator with laterally interdigital contacts made by shadow mask molecular beam epitaxy regrowth

X. Wu, K. H. Gulden, M. Thomas, J. S. Smith, J. R. Whinnery, S. Malzer, P. Kiesel, M. Kneissl, and G. H. Döhler

Appl. Phys. Lett. 62, 152 (1993); http://dx.doi.org/10.1063/1.109600 (2 pages) | Cited 7 times

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An AlGaAs/GaAs optical hetero‐nipi modulator based on band filling effect with interdigital selective contacts has been fabricated by use of shadow mask molecular beam epitaxy (MBE) regrowth technique. There is a five order of magnitude change in I‐V characteristics from forward to reverse junction bias, which indicates the high quality of the interdigital contacts. The measured reflectance spectra show a change of the absorption coefficient of about 7850 cm−1 with an applied bias voltage as low as 1.5 V.
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42.79.Hp Optical processors, correlators, and modulators
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Fd III-V semiconductors

Migration enhanced epitaxy growth of GaAs on Si with (GaAs)1−x (Si2)xGaAs strained layer superlattice buffer layers

T. Sudersena Rao, K. Nozawa, and Y. Horikoshi

Appl. Phys. Lett. 62, 154 (1993); http://dx.doi.org/10.1063/1.109355 (3 pages) | Cited 6 times

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(GaAs)1−x(Si2)x/GaAs strained‐layer superlattices (SLS) have been used as buffer layers to reduce the dislocation density in GaAs grown on Si by migration enhanced epitaxy (MEE). Double‐crystal x‐ray diffractograms of GaAs on Si grown using MEE with 3 packets of 5 period (GaAs)1−x(Si2)x/GaAs SLS buffer layers, exhibited a GaAs (004) peak full width at half maximum value of 150 arcsecs. The cross‐sectional transmission electron microscopy investigations revealed extensive threading dislocation bending at each interface of (GaAs)1−x(Si2)x and GaAs, making the SLS highly efficient. The observed highly effective dislocation bending, we believe is due to a combined effect of built‐in strain in the SLS and the relatively high elastic stiffness constant of (GaAs)1−x(Si2)x alloys. Plan‐view transmission electron microscopy studies indicated dislocation densities <5×105 cm−2 at a distance of 0.2 μm from the surface of GaAs on Si.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.60.-p Physical properties of thin films, nonelectronic
68.55.-a Thin film structure and morphology

Time resolved electroluminescence in hydrogenated amorphous silicon

Keda Wang, Daxing Han, Mathieu Kemp, and Marvin Silver

Appl. Phys. Lett. 62, 157 (1993); http://dx.doi.org/10.1063/1.109356 (3 pages) | Cited 8 times

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The electroluminescence lifetime distribution of a‐Si:H is measured. We find that the distribution is double peaked. The first peak occurs at 10−6 s independent of temperature. The second peak changes from 10−3 to 10−6 s with increasing temperature. A model including the Coulomb interaction between electrons and holes and transport limited recombination is discussed.
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78.60.Fi Electroluminescence
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

High rate epitaxial growth of InP by merged hydride organometallic vapor phase epitaxy in a hot‐wall reactor

V. S. Ban, D. Rodefeld, J. R. Flemish, and K. A. Jones

Appl. Phys. Lett. 62, 160 (1993); http://dx.doi.org/10.1063/1.109357 (3 pages) | Cited 1 time

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A new method which combines features of organometallic vapor phase epitaxy (VPE) with hydride VPE has been demonstrated for the epitaxial growth of InP. In this method trimethylindium is coinjected with HCl into a hot‐wall reactor to form volatile InCl, and PH3 is used as the phosphorus source. Layers of InP were grown at approximately 8 μm/h with excellent morphology and good electrical properties. Hall measurements at 77 K show background n‐type conductivity with n=7×1015/cm3 and μ=34 000 cm2/V s. This technique should be capable of growing ternary and quaternary heterostructures with thin layers and abrupt junctions.  
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Stability of ultrathin silicon nitride films on Si(100)

L. J. Huang, R. W. M. Kwok, W. M. Lau, H. T. Tang, W. N. Lennard, I. V. Mitchell, and P. J. Schultz

Appl. Phys. Lett. 62, 163 (1993); http://dx.doi.org/10.1063/1.109358 (3 pages) | Cited 4 times

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Ultrathin silicon nitride films on Si(100) have been studied using x‐ray photoelectron spectroscopy, medium energy ion scattering, Raman spectroscopy, and variable‐energy positron annihilation spectroscopy. Films ∼10‐nm‐thick were prepared by remote microwave plasma chemical vapor deposition. A compressive stress of about 0.4 GPa was found by measuring the Raman shift of the fifth‐harmonic LO mode of the silicon substrate. The film properties, however, changed significantly upon vacuum annealing. Annealing at 100 °C for 1 h resulted in an increase of nitrogen concentration near the film surface, probably because of nitrogen surface segregation. Annealing at 100–500 °C also released film induced stress and a complete stress release was achieved by annealing at 500 °C for 1 h. Positron annihilation results showed that vacuum annealing only affected the film but not the substrate.
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68.55.-a Thin film structure and morphology
68.60.-p Physical properties of thin films, nonelectronic

Measurement of nonradiative Auger and radiative recombination rates in strained‐layer quantum‐well systems

M. C. Wang, K. Kash, C. E. Zah, R. Bhat, and S. L. Chuang

Appl. Phys. Lett. 62, 166 (1993); http://dx.doi.org/10.1063/1.109359 (3 pages) | Cited 26 times

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To understand the feasibility of using strain to reduce the nonradiative Auger recombination rate of 1.5 μm semiconductor lasers, we have directly measured the radiative and nonradiative Auger recombination rates in strained‐layer InGaAs/AlGaInAs quantum‐well systems, using time‐resolved photoluminescence measurements. We find that the Auger recombination rate can be reduced in either biaxial compressively or tensilely strained quantum‐well structures. A longer radiative carrier lifetime is observed for the tensile‐strained materials. The effect of strain and quantum confinement on the carrier lifetime is discussed.
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78.66.Fd III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Observation of impurity effects on the nucleation of arsenic precipitates in GaAs

J. P. Ibbetson, J. S. Speck, A. C. Gossard, and U. K. Mishra

Appl. Phys. Lett. 62, 169 (1993); http://dx.doi.org/10.1063/1.109360 (3 pages) | Cited 16 times

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The precipitation of arsenic in low temperature GaAs uniformly doped with Si and Be has been studied by transmission electron microscopy. Following an in situ anneal at 600 °C, precipitate size and density is found to be strongly dependent on the dopant type. Impurities at the epilayer/substrate interface lead to heterogeneous nucleation of precipitates. Although precipitates were observed to nucleate heterogeneously at threading dislocations, the precipitates predominantly form homogeneously. These results are consistent with the general theory of precipitation in solids.
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68.60.Dv Thermal stability; thermal effects
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Atomistic calculation of the self‐interstitial diffusivity in silicon

Dimitris Maroudas and Robert A. Brown

Appl. Phys. Lett. 62, 172 (1993); http://dx.doi.org/10.1063/1.109361 (3 pages) | Cited 23 times

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Formation and migration properties of self‐interstitial atoms in silicon are calculated using systematic atomistic simulations based on the Stillinger–Weber interatomic potential [F. H. Stillinger and T. A. Weber, Phys. Rev. B 31, 5262 (1985)]. The lowest energy configuration of an interstitial atom is calculated to be an extended configuration with a formation energy that is 1.2 eV lower than the formation energy of the higher symmetry configuration with lowest energy. A mechanism for the interpretation of dopant diffusion data is proposed based on this result. The calculated lower bound for the diffusion coefficient of self‐interstitials described by a simple migration path is in good agreement with experimental data over the temperature range 733 K<T<1473 K.
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66.30.H- Self-diffusion and ionic conduction in nonmetals
66.30.Lw Diffusion of other defects
61.72.Cc Kinetics of defect formation and annealing

Effect of Auger recombination and differential gain on the temperature sensitivity of 1.5 μm quantum well lasers

Y. Zou, J. S. Osinski, P. Grodzinski, P. D. Dapkus, W. Rideout, W. F. Sharfin, and F. D. Crawford

Appl. Phys. Lett. 62, 175 (1993); http://dx.doi.org/10.1063/1.109362 (3 pages) | Cited 16 times

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The temperature sensitivity of both strained and lattice‐matched 1.5 μm quantum well lasers has been studied. From a complete experimental investigation of the temperature behavior of carrier lifetime, gain, and internal loss, it is found that Auger recombination is not the dominant factor in affecting the temperature sensitivity of threshold currents in 1.5 μm lasers. Instead, the dominant contribution to the temperature dependence of threshold currents in 1.5 μm lasers is the change in differential gain with temperature—a characteristic not improved by strain.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Intermixing of GaInP/GaAs multiple quantum wells

C. Francis, M. A. Bradley, P. Boucaud, F. H. Julien, and M. Razeghi

Appl. Phys. Lett. 62, 178 (1993); http://dx.doi.org/10.1063/1.109363 (3 pages) | Cited 13 times

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The intermixing of GaInP‐GaAs superlattices induced by a heat treatment is investigated as a function of the annealing temperature and duration. Photoluminescence experiments reveal a large red shift of the effective band gap of the annealed quantum wells thus indicating a dominant self‐diffusion of the group III atoms which is confirmed by secondary ion mass spectroscopic measurements. For long enough annealing durations, the red shift saturates and even decreases due to the competing slower self‐diffusion of the group V atoms. Experiments are well understood based on a simple diffusion model.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
66.30.Ny Chemical interdiffusion; diffusion barriers
78.55.Cr III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Admittance spectroscopy of boron doped diamond

J. W. Glesener, K. A. Snail, and A. A. Morrish

Appl. Phys. Lett. 62, 181 (1993); http://dx.doi.org/10.1063/1.109332 (3 pages) | Cited 4 times

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The boron acceptor level in diamond was investigated using admittance spectroscopy. The conductance of a flame grown sample was measured between 125 and 200 K at five frequencies between 0.1 and 5.0 kHz using a 16.0 mV ac signal applied across a Schottky diode at zero dc bias. The admittance spectroscopy technique yielded a deep impurity level of 0.33 eV. From the same set of data, a hole capture cross section of 2×10−12 cm2 was also measured. The cross section reported here is assumed to be caused by ionized boron acceptors.
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71.55.Cn Elemental semiconductors
72.80.Cw Elemental semiconductors

Optical tri‐state switching through a metastable state using short pulse excitation

Kenji Kawashima, Makoto Hosoda, and Kenzo Fujiwara

Appl. Phys. Lett. 62, 184 (1993); http://dx.doi.org/10.1063/1.109333 (3 pages) | Cited 4 times

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Optical tri‐state switching is obtained for the first time, using short pulse excitation in a symmetric self‐electro‐optic effect device based on the Wannier–Stark localization (WSL‐SEED). A novel method, by controlling photoexcited charges, is proposed to set and reset the transmission states of the signal diode, which enables us to use a metastable state as an intermediate state in the tri‐state device. By the use of a sequence of the optical pulses a clear switching among three stable states as well as optical adder/subtracter properties is demonstrated.  
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
78.66.Fd III-V semiconductors
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