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24 May 1993

Volume 62, Issue 21, pp. 2599-2733

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High power blue light generation by frequency doubling of a laser diode in a periodically domain‐inverted LiTaO3 waveguide

Kazuhisa Yamamoto, Kiminori Mizuuchi, Yasuo Kitaoka, and Makoto Kato

Appl. Phys. Lett. 62, 2599 (1993); http://dx.doi.org/10.1063/1.109305 (3 pages) | Cited 38 times

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We report high power and stable blue‐light generation by frequency doubling a laser diode, stabilized by a grating feedback technique, in a periodically domain‐inverted LiTaO3 waveguide. Due to the deep domain‐inverted regions and strong waveguide confinement formed by proton‐exchange and a quick heat treatment, high efficiency second harmonic generation (SHG) has been obtained. Locking the oscillation wavelength of a laser diode through the waveguide by a grating feedback technique, 8 mW of stable blue SHG has been demonstrated.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.72.Bj Visible and ultraviolet sources

Extremely high quantum efficiency (86%) operation of AlGaInP visible laser diode with lateral leaky waveguide structure

Isao Kidoguchi, Satoshi Kamiyama, Masaya Mannoh, Yuzaburoh Ban, and Kiyoshi Ohnaka

Appl. Phys. Lett. 62, 2602 (1993); http://dx.doi.org/10.1063/1.109306 (3 pages) | Cited 8 times

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AlGaInP visible laser diode with lateral leaky waveguide structure has been demonstrated for the first time. The laser has differential quantum efficiency as high as 43% from one facet without coating in addition to stable fundamental transverse‐mode oscillation. The high differential quantum efficiency is due to the propagation loss as low as 4.2 cm−1 of this laser, which is the lowest value for AlGaInP visible diode to the best of our knowledge. This laser can be successfully fabricated by selective growth of AlGaInP quarternary alloy.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Efficient poling and thermal crosslinking of randomly bonded main‐chain polymers for stable second‐order nonlinearities

Peter M. Ranon, Yongqiang Shi, William H. Steier, Chengzeng Xu, Bo Wu, and Larry R. Dalton

Appl. Phys. Lett. 62, 2605 (1993); http://dx.doi.org/10.1063/1.109285 (3 pages) | Cited 24 times

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We report our second‐harmonic generation study of a new crosslinked main‐chain polymer system for second‐order nonlinear optics (NLO). In this unique polymer system, the rigid second‐order NLO chromophores are randomly bonded in the main chain with flexible links between the rigid chromophores to allow electric poling at or above the glass transition temperature. A thermal crosslinker is added to crosslink the polymer backbone during electric poling. The combination of the flexible chain segments and crosslinking allows us to achieve a high degree of alignment (〈cos3θ〉≊0.34) and long‐term (≳2500 h) temporal stability of the nonlinearities.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Jk Polymers and organics

Effects of heat treatment on sharp‐line photoluminescence of GaAs grown by low‐temperature molecular beam epitaxy

P. W. Yu, Devki N. Talwar, and C. E. Stutz

Appl. Phys. Lett. 62, 2608 (1993); http://dx.doi.org/10.1063/1.109260 (3 pages) | Cited 11 times

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We report the effects of heat treatment on sharp‐line photoluminescence spectra from GaAs layers grown by low‐temperature molecular beam epitaxy. The photoluminescence consists of no‐phonon lines of three different centers and associated phonon sidebands of both lattice and localized vibrational modes. By considering the calculated values of local phonon modes, the photoluminescence features, and layer growth conditions, we attribute the three no‐phonon lines to the nearest neighbor C3v‐type arsenic interstitial complexes: Asin‐VGa, Asin‐CAs and Asin‐AsGa. Heat treatments at 300–500 °C considerably increase the concentration of Asin, and thereby, of Asin‐CAs and Asin‐AsGa.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
71.55.Eq III-V semiconductors

Observation of period doubling, period tripling, and period quadrupling in a directly modulated 1.55 μm InGaAsP distributed feedback laser diode

Wan Fung Ngai and Hai‐Feng Liu

Appl. Phys. Lett. 62, 2611 (1993); http://dx.doi.org/10.1063/1.109261 (3 pages) | Cited 8 times

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Dynamic characteristics of a directly modulated 1.55 μm InGaAsP distributed feedback semiconductor laser are investigated up to a modulation index of 12. Period doubling, period tripling, and period quadrupling are observed for the first time. The irregular behavior is examined at various bias current levels and modulation frequencies. The route to chaos is found to be via period doubling followed by period quadrupling and period tripling. The observed irregular behavior is attributed to the relatively small fraction of the spontaneous emission coupled into the lasing mode (β factor) of distributed feedback lasers, which is confirmed by a separate experiment.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.60.Mi Dynamical laser instabilities; noisy laser behavior

CsB3O5: A new nonlinear optical crystal

Yicheng Wu, Takatomo Sasaki, Sadao Nakai, Atsushi Yokotani, Honggao Tang, and Chuangtian Chen

Appl. Phys. Lett. 62, 2614 (1993); http://dx.doi.org/10.1063/1.109262 (2 pages) | Cited 120 times

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On the basis of the anionic group theory, a new nonlinear optical crystal cesium triborate, (CsB3O5, CBO) was discovered. Single crystals of CBO in centimeter size were grown from a stoichiometric melt. The transparent range of CBO covers from 170 to 3000 nm. The preliminary measurement of its second harmonic generation coefficient shows that its d14 is ∼0.468×d11 (β−BaB2O4). Its measured damage threshold is as high as 26 GW/cm2 at 1.053 μm, 1.0 ns.  
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
61.80.-x Physical radiation effects, radiation damage
81.10.Fq Growth from melts; zone melting and refining

Er3+ doping of CaF2 layers grown by molecular beam epitaxy

E. Daran, L. E. Bausa, A. Muñoz-Yagüe, and C. Fontaine

Appl. Phys. Lett. 62, 2616 (1993); http://dx.doi.org/10.1063/1.109263 (3 pages) | Cited 15 times

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Molecular beam epitaxy of CaF2 monocrystalline layers Er3+ doped up to a concentration of 5 wt % is demonstrated on CaF2 substrates. Separated effusion cells containing CaF2 and ErF3 were used. The photoluminescence spectra of the samples show emissions from centers of different symmetry identified by reference to published results obtained on CaF2:Er3+ bulk crystals. No influence of the substrate orientation—(100) or (111)—on the luminescence characteristics was observed.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.70.Hj Laser materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.55.Hx Other solid inorganic materials

Broadband second‐harmonic generation in SrxBa1−xNb2O6 by spread spectrum phase matching with controllable domain gratings

Moshe Horowitz, Alexander Bekker, and Baruch Fischer

Appl. Phys. Lett. 62, 2619 (1993); http://dx.doi.org/10.1063/1.109264 (3 pages) | Cited 66 times

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We have demonstrated, for the first time to our knowledge, second‐harmonic generation for a broad input wavelength range of 750–1064 nm in SrxBa1−xNb2O6 crystals, with a controllable spread spectrum of quasiphase matching. Second‐harmonic conversion efficiencies of up to ∼1% were observed. This was done without any temperature or angular tuning of the crystal. The phase matching was obtained by inducing alternating ferroelectric domains in the crystal in real time, using a novel fixing process which is based on screening. The broadband capability of the conversion is allowed by a spread in the range of the domain widths.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Electron energy distribution function measurements in a planar inductive oxygen radio frequency glow discharge

Michael S. Barnes, John C. Forster, and John H. Keller

Appl. Phys. Lett. 62, 2622 (1993); http://dx.doi.org/10.1063/1.109265 (3 pages) | Cited 66 times

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A tuned, cylindrical Langmuir probe was used to measure current‐voltage traces in a planar, inductive oxygen, radio frequency glow discharge at several pressures ranging from 0.5 to 10 mT. The plasma potentials were determined from the zero crossings of the trace second derivatives. Positive ion densities were evaluated using orbit motion limited probe theory; electron densities were estimated by integrating the area under the unnormalized distribution function. By applying the Druyvesteyn formula to the digitized probe traces, the electron energy distribution functions were obtained. The distribution functions ranged from Maxwellian at 0.5 mT to almost Druyvesteyn‐like at 10 mT.
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52.70.-m Plasma diagnostic techniques and instrumentation
52.80.Hc Glow; corona
52.25.-b Plasma properties

Multilayer structure for epitaxial growth of oxide films on Si with an underlying electrode

L. S. Hung and L. A. Bosworth

Appl. Phys. Lett. 62, 2625 (1993); http://dx.doi.org/10.1063/1.109266 (3 pages) | Cited 7 times

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Multilayers of CaF2 , Pd, and Pt were epitaxially grown on HF treated (100)Si by sequential deposition of the desired materials in ultrahigh vacuum. This structure is suitable for epitaxial growth of oxide films on Si with an underlying electrode. The epitaxial layer CaF2 effectively acts as a barrier to impede metal‐substrate reaction, and the metal bilayer Pd/Pt forms an epitaxial electrode with good adhesion to the underlying substrate and high resistance to oxidation. KNbO3 deposited on this multilayer structure showed epitaxial growth in a mixed (001)/(110) orientation.
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68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Direct observation of the tip shape in scanning probe microscopy

L. Montelius and J. O. Tegenfeldt

Appl. Phys. Lett. 62, 2628 (1993); http://dx.doi.org/10.1063/1.109267 (3 pages) | Cited 39 times

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In this study we report on the first direct observation of the real shape of the atomic force microscopy (AFM) tip using the AFM technique itself, utilizing a specially designed sample geometry. This is the first report of the so‐called inverse AFM mode in which the tip is actually used as the sample and vice versa. We propose how this method can, with a very high accuracy, be used for studying objects, e.g., biomolecules, that are attached to the usual AFM cantilever tip. Finally, we discuss how this method can significantly increase the reliability of the obtained AFM images.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Microstructure of porous silicon

A. Nakajima, Y. Ohshima, T. Itakura, and Y. Goto

Appl. Phys. Lett. 62, 2631 (1993); http://dx.doi.org/10.1063/1.109268 (3 pages) | Cited 24 times

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We examined the microstructure of luminescent porous silicon by cross‐sectional high‐resolution transmission electron microscopy and found a threadlike structure consisting of Si microcrystals. We also found Si microcrystals with sizes ranging about 3–20 nm randomly distributed throughout the porous silicon.
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78.55.Hx Other solid inorganic materials
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
61.05.J- Electron diffraction and scattering

Activation energy for the C49‐to‐C54 phase transition of polycrystalline TiSi2 films with arsenic impurities

Y. Matsubara, T. Horiuchi, and K. Okumura

Appl. Phys. Lett. 62, 2634 (1993); http://dx.doi.org/10.1063/1.109269 (3 pages) | Cited 13 times

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The C49‐to‐C54 transition in TiSi2 was investigated using samples having submicron line width film, by an x‐ray diffraction technique. Arrhenius plots of the transition rate show that the C49‐to‐C54 transition of polycrystalline TiSi2 films with arsenic impurities have an activation energy barrier strongly dependent on the arsenic concentration. The energy increases as a function of arsenic impurity concentration, from 3.5 eV for TiSi2 formed on Si substrate ion implanted with the dose of 2×1015 cm−2, to 7.8 eV with the dose of 5×1015 cm−2. The annealing time dependence of the x‐ray intensity on (004) orientation indicates that TiSi2 formed on Si substrate with the arsenic dose of 2×1015 cm−2 shows a diffusion‐limited process and that with the dose of 5×1015 cm−2 shows an interface‐limited process. The arsenic precipitates act to pin the C49 phase in the C49‐to‐C54 transition.  
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64.70.K- Solid-solid transitions
68.55.Nq Composition and phase identification

Stresses and morphological instabilities in silicide/polycrystalline Si layered structures

Q. Z. Hong, F. M. d’Heurle, J. M. E. Harper, and Stella Q. Hong

Appl. Phys. Lett. 62, 2637 (1993); http://dx.doi.org/10.1063/1.109270 (3 pages) | Cited 8 times

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The evolution of stress in silicide/polycrystalline Si (poly‐Si) layered structures has been monitored in situ in the temperature range of 25–700 °C. At elevated temperatures, the silicide/poly‐Si structure becomes morphologically unstable. The grain growth of poly‐Si leads to an inversion of the positions of the two layers. The in situ stress measurement shows that this structural degradation is accompanied by a substantial increase in tensile stress of around 0.4 GPa, for NiSi, Pd2Si, and PtSi. A simple calculation indicates that the magnitude of the stress increase can be accounted for, at least to a large extend, by the volume contraction caused by the grain growth of poly‐Si.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.60.Dv Thermal stability; thermal effects
68.35.Md Surface thermodynamics, surface energies

Polarity inversion of CdTe(111) orientation grown on Bi (00.1) by molecular beam epitaxy

A. DiVenere, X. J. Yi, C. L. Hou, H. C. Wang, J. B. Ketterson, G. K. Wong, and I. K. Sou

Appl. Phys. Lett. 62, 2640 (1993); http://dx.doi.org/10.1063/1.109271 (3 pages) | Cited 19 times

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Using in situ reflection high‐energy electron diffraction analysis and chemical etching it is shown that CdTe grown on Bi layers deposited on CdTe (111)B terminated surfaces result in (111)A terminated surfaces. The Bi layers exhibit streaked diffraction patterns with clear Kikuchi lines; this is the first direct evidence for the layer by layer two‐dimensional growth of Bi on CdTe by molecular beam epitaxy.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Epitaxial C60 films on CaF2 (111) grown by molecular beam deposition

S. Fölsch, T. Maruno, A. Yamashita, and T. Hayashi

Appl. Phys. Lett. 62, 2643 (1993); http://dx.doi.org/10.1063/1.109272 (3 pages) | Cited 21 times

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Epitaxial C60 films grown by molecular beam deposition onto CaF2(111) surfaces are investigated by reflection high‐energy electron diffraction at deposition temperatures of 30–300 °C and coverages corresponding to average thicknesses of 1–50 nm. Over this entire temperature range, C60 forms an incommensurate overgrowth of stacked hexagonal layers exhibiting a characteristic nearest‐neighbor spacing of 0.98 nm. Below 170 °C, unidirectional growth occurs in accordance with the crystallographic directions of the substrate. At higher deposition temperatures, however, two equivalent, rotated domain orientations are observed which are characterized by a significantly lower degree of lattice mismatch.  
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

New dielectric material for low temperature thermometry in high magnetic fields

M. M. Maior, S. B. Molnar, Yu. M. Vysochanskii, M. I. Gurzan, P. H. M. van Loosdrecht, P. J. E. M. van der Linden, and H. van Kempen

Appl. Phys. Lett. 62, 2646 (1993); http://dx.doi.org/10.1063/1.109273 (3 pages) | Cited 4 times

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Dielectric experiments on the incommensurate solid solution (Pb0.45Sn0.55)2P2Se6 for T=1.2–200 K reveal a strong temperature dependence of the real part of the dielectric constant for T<45 K. The relative dielectric sensitivity d ln(ϵ′)/dT≊2–8 K−1 is found to be 2–3 times higher in comparison to widely used glass‐ceramic temperature sensors. Moreover, the dielectric constant has a very good time stability and is insensitive to magnetic fields up to 20 T (dT/dB<10−4 K/T). These characteristics make this material a very promising candidate for applications in capacitive temperature sensors for low temperature thermometry in high magnetic fields.
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77.22.Ch Permittivity (dielectric function)
07.20.Dt Thermometers

Surface‐breaking fatigue crack detection using laser ultrasound

Q. Shan and R. J. Dewhurst

Appl. Phys. Lett. 62, 2649 (1993); http://dx.doi.org/10.1063/1.109274 (3 pages) | Cited 28 times

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Surface‐breaking tight fatigue cracks in mild steel have been examined with laser‐generated ultrasonic pulses. Before the arrival of transmitted Rayleigh waves arriving at the detector, evidence is presented of a fast skimming longitudinal pulse which is also transmitted through the crack. Additionally, another ultrasonic feature is consistent with a longitudinal wave which is mode converted to a diffracted shear pulse by the tip of the fatigue crack. Such an interaction mechanism can form the basis of laser‐based fatigue crack depth measurements.  
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43.35.Zc Use of ultrasonics in nondestructive testing, industrial processes, and industrial products
62.20.M- Structural failure of materials
81.70.-q Methods of materials testing and analysis

W(Zn) selectively deposited and locally diffused ohmic contacts to p‐InGaAs/InP formed by rapid thermal low pressure metalorganic chemical vapor deposition

A. Katz, A. El‐Roy, A. Feingold, M. Geva, N. Moriya, S. J. Pearton, E. Lane, T. Keel, and C. R. Abernathy

Appl. Phys. Lett. 62, 2652 (1993); http://dx.doi.org/10.1063/1.109275 (3 pages) | Cited 4 times

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Self‐aligned, locally diffused W(Zn) contacts to InGaAs/InP structures were fabricated by means of rapid thermal low pressure metalorganic chemical vapor deposition (RT‐LPMOCVD), using a reactive gas mixture that contained diethylzinc (DEZn), WF6, H2, and Ar. W(Zn) layers of about 30 nm thick were deposited at 500 °C for 20 s and at a total pressure of about 2 Torr, onto InGaAs and InP. Spontaneous formation of highly doped underlying InGaAs and InP layers about 150 nm thick with Zn concentration levels higher than 1×1018 cm−3 took place through the deposition of the W(Zn) layers. Post‐deposition, in situ annealing at temperatures of 500 °C or lower enhanced the indiffusion of Zn into the underlying semiconductor and reduced the specific resistance of the W(Zn)/InGaAs contact to a minimum value of 5×10−6 Ω cm−2.
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61.72.uj III-V and II-VI semiconductors
66.30.J- Diffusion of impurities
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Photoluminescence of AlAs/GaAs superlattice quantum wells

Y. C. Albert Shih and B. G. Streetman

Appl. Phys. Lett. 62, 2655 (1993); http://dx.doi.org/10.1063/1.109276 (3 pages)

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We report the results of low‐temperature photoluminescence (PL) studies of AlAs/GaAs superlattice quantum wells (SLQWs), obtained by placing various periods of short‐period AlAs/GaAs superlattices (SLs) between two Al0.45Ga0.55As confining layers. Structures with a constant well width and various combinations of AlAs and GaAs layer thicknesses in the SLs are synthesized by molecular beam epitaxy. Two distinct peaks are resolved in the PL spectra, which can be attributed to transitions involving heavy‐hole and light‐hole bands. Comparison of 4 and 77 K PL spectra reveal evidence of type‐II band alignment in SLQWs with thin GaAs layers.
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78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors

Removal of GaAs surface contaminants using H2 electron cyclotron resonance plasma treatment followed by Cl2 chemical etching

M. Hong, R. S. Freund, K. D. Choquette, H. S. Luftman, J. P. Mannaerts, and R. C. Wetzel

Appl. Phys. Lett. 62, 2658 (1993); http://dx.doi.org/10.1063/1.109277 (3 pages) | Cited 8 times

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We report a novel dry process to remove the surface contaminants C, Si, and O from GaAs substrates. This method utilizes an electron cyclotron resonance hydrogen plasma to remove the native oxides, followed by a very brief Cl2 chemical etching of GaAs to further reduce C and Si residues, and a final vacuum anneal. Characterization by secondary ion‐mass spectrometry (SIMS) typically reveals the removal of C, Si, and O at the overgrown/processed interface to the levels below the SIMS detection limit. The as‐processed GaAs surface, a Ga‐stabilized reconstructed (4×6), is atomically smooth, and is as clean as a surface of freshly grown GaAs epilayers.
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81.65.-b Surface treatments
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Electron transport properties of a strained Si layer on a relaxed Si1−xGex substrate by Monte Carlo simulation

H. Miyata, Toshishige Yamada, and D. K. Ferry

Appl. Phys. Lett. 62, 2661 (1993); http://dx.doi.org/10.1063/1.109278 (3 pages) | Cited 49 times

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The in‐plane transport properties of a strained (100) Si layer on a relaxed Si1−xGex substrate are studied with an ensemble Monte Carlo technique. Similar velocity (‐field) characteristics are found for strained Si with any valley splitting energy ΔE≥0.1 eV. These phonon‐limited electron mobilities reach 4000 cm2/V s at 300 K, and 23 000 cm2/V s at 77 K. There is only a slight increase in the saturation velocity at both temperatures. However, a significant overshoot peak transient velocity is found to depend upon ΔE, and for ΔE=0.4 eV, reaches 4.1×107 cm/s at 300 K, and 5.2×107 cm/s at 77 K.
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73.50.Dn Low-field transport and mobility; piezoresistance
73.50.Fq High-field and nonlinear effects
73.61.Cw Elemental semiconductors
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

In situ Cr gettering in polycrystalline silicon sheets obtained by edge‐defined film‐fed growth

B. Pivac, A. Borghesi, A. Sassella, J. Kalejs, and B. R. Bathey

Appl. Phys. Lett. 62, 2664 (1993); http://dx.doi.org/10.1063/1.109631 (3 pages) | Cited 7 times

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Gettering of Cr during the growth of silicon sheets from a Cr‐doped melt is observed when the solid/liquid interface region is exposed to CO or CO2 gases. The gettering occurs within a region about 1‐μm wide at the surface of the crystal, where a large accumulation of carbon and oxygen is detected. Mechanisms for carbon and oxygen participation in forming gettering sites for Cr are examined.
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61.72.Yx Interaction between different crystal defects; gettering effect
81.10.Fq Growth from melts; zone melting and refining
61.72.uf Ge and Si

Stability of visible luminescence from porous silicon

J. L. Batstone, M. A. Tischler, and R. T. Collins

Appl. Phys. Lett. 62, 2667 (1993); http://dx.doi.org/10.1063/1.109279 (3 pages) | Cited 23 times

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The stability of the luminescence from porous Si has been improved by rapid thermal oxidation. As‐prepared and oxidized samples have been compared by cathodoluminescence and photoluminescence. Electron beam excitation resulted in rapid decay of the porous Si emission from as‐prepared samples. Photoluminescence measurements from as‐prepared samples in oxygen showed a similar degradation. In contrast, the rapid thermal oxidized samples showed a dramatic improvement in stability under either electron beam or photoexcitation.
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78.55.Hx Other solid inorganic materials
78.60.Hk Cathodoluminescence, ionoluminescence
73.20.At Surface states, band structure, electron density of states
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Compensation of shallow silicon donors by deep copper acceptors in gallium arsenide

Randy A. Roush, David C. Stoudt, and Michael S. Mazzola

Appl. Phys. Lett. 62, 2670 (1993); http://dx.doi.org/10.1063/1.109280 (3 pages) | Cited 7 times

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Electrical compensation in n‐type, silicon‐doped, GaAs (GaAs:Si) has been achieved for several different silicon doping densities. The introduction of deep copper acceptors into GaAs:Si through a thermal diffusion process has produced semi‐insulating GaAs:Si:Cu. The density of diffused copper is shown to be predicted, to a good approximation, by knowledge of both the annealing temperature at which compensation is observed, and the initial free‐electron density. Also, a model based on Fermi–Dirac statistics has demonstrated the same qualitative behavior as the data.
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71.55.Eq III-V semiconductors
61.72.uj III-V and II-VI semiconductors
72.80.Ey III-V and II-VI semiconductors
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