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24 May 1993

Volume 62, Issue 21, pp. 2599-2733

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Direct measurement of near‐band‐gap electrorefraction in Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As thin‐film structures

K. H. Calhoun and N. M. Jokerst

Appl. Phys. Lett. 62, 2673 (1993); http://dx.doi.org/10.1063/1.109281 (3 pages) | Cited 2 times

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We report the first direct measurement of near‐band‐gap Franz–Keldysh electrorefraction in Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As p‐i‐n single‐crystal thin‐film Fabry–Perot structures with semitransparent metallic mirror contacts. These measurements are performed for various reverse biases and at photon energies ranging from 9 to less than 1 meV from the GaAs band edge. The measured refractive index variation is several times larger than that predicted by the effective mass approximation theory.
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78.66.Fd III-V semiconductors
78.20.Jq Electro-optical effects
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Photoluminescence study of radiative recombination in porous silicon

C. Wang, J. M. Perz, F. Gaspari, M. Plumb, and S. Zukotynski

Appl. Phys. Lett. 62, 2676 (1993); http://dx.doi.org/10.1063/1.109282 (3 pages) | Cited 10 times

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Photoluminescence in porous Si films has been studied in the temperature range from 15 to 250 K. The luminescence peak is found to shift to higher frequency with increasing temperature. Above 100 K the luminescence intensity shows strong thermal quenching with an activation energy of 60 meV. Below 100 K photoluminescence decay data obtained using quadrature frequency resolved spectroscopy are characterized by a single lifetime of about 300 μs. At 250 K several time constants are seen to contribute to the luminescence decay. We attribute the very intense low‐temperature photoluminescence to recombination at localized extrinsic centers.
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78.55.Hx Other solid inorganic materials
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Photoabsorption in n‐type Si‐SiGe quantum‐well infrared photodetectors

V. D. Shadrin, V. T. Coon, and F. L. Serzhenko

Appl. Phys. Lett. 62, 2679 (1993); http://dx.doi.org/10.1063/1.109283 (3 pages) | Cited 4 times

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The calculation of the photoabsorption spectra and quantum efficiency of Si‐SiGe quantum‐well (QW) detectors are presented, with the effects of depolarization and electron‐electron exchange interaction taken into consideration. We show that the Si‐SiGe QW detectors possess lower dark current, lower tunneling rates, and better photoabsorption characteristics when compared to GaAs‐AlGaAs photodetectors. These imply that Si‐SiGe QW detector performance characteristics are superior to GaAs‐AlGaAs QW infrared photodetectors in addition to its advantage of compatibility with Si‐readout circuity.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.De Semiconductor-device characterization, design, and modeling
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Pz Photoconduction and photovoltaic effects

Interface defects of ultrathin rapid‐thermal oxide on silicon

J. H. Stathis, D. A. Buchanan, D. L. Quinlan, A. H. Parsons, and D. E. Kotecki

Appl. Phys. Lett. 62, 2682 (1993); http://dx.doi.org/10.1063/1.109284 (3 pages) | Cited 20 times

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We have used capacitance‐voltage and electron paramagnetic resonance to measure interface defects in ultrathin (30 Å) SiO2 prepared by rapid‐thermal oxidation. We observe a very narrow interface state peak in the upper portion of the Si band gap, as well as both Pb0 and Pb1 defects in the as‐oxidized film. Forming‐gas annealing removes the interface state and most of the Pb centers. However, from the energy level and charge state of the interface state peak, we argue that it cannot be reliably ascribed to either Pb0 or Pb1.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators

Schottky barrier height and interface chemistry of annealed metal contacts to alpha 6H‐SiC: Crystal face dependence

J. R. Waldrop and R. W. Grant

Appl. Phys. Lett. 62, 2685 (1993); http://dx.doi.org/10.1063/1.109257 (3 pages) | Cited 80 times

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The electrical properties and interface chemistry of unannealed and annealed Ni, Ti, and Al contacts to both Si (0001) and C (0001) terminated faces of 6H‐SiC are compared by using x‐ray photoemission spectroscopy, current‐voltage, and capacitance‐voltage data. For annealing temperatures in the 400 to 600 °C range Ni and Ti contacts have significantly more dissociation of interface SiC and formation of reaction products for the C‐face than the Si‐face. The chemical reactivity of the Al contact was limited and equal for both faces. Stability of the Schottky barrier height with annealing, which has a wide variation according to metal and face, is not correlated with the degree of metal/6H‐SiC interface chemical reactivity
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73.30.+y Surface double layers, Schottky barriers, and work functions
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.35.Fx Diffusion; interface formation
73.40.Cg Contact resistance, contact potential

Observation of staggered band lineup in In0.5Ga0.5P/Al0.43Ga0.57As heterojunction grown by liquid phase epitaxy

Jong Boong Lee, Kwan‐Shik Kim, and Byung‐Doo Choe

Appl. Phys. Lett. 62, 2688 (1993); http://dx.doi.org/10.1063/1.109258 (3 pages) | Cited 1 time

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The conduction band discontinuity for n‐N isotype In0.5Ga0.5P/Al0.43Ga0.57As heterostructure grown on (100) GaAs substrate by liquid phase epitaxy was measured by the capacitance‐voltage profiling method. The composition of each ternary was determined by photoluminescence and double‐crystal x‐ray diffraction measurement. The measurement of conduction band discontinuity shows staggered band lineup with both bands of In0.5Ga0.5P above those of Al0.43Ga0.57As, and the calculated conduction‐band discontinuity ΔEc and the fixed interface charge density σi are 157 meV and −3×1010 cm−2, respectively. The nonoptimized fabrication of the light emitting devices with AlGaAs/InGaP/AlGaAs double heterostructure can be explained by the staggered band lineup of In0.5Ga0.5P/AlxGa1−xAs heterointerface for x(AlAs)≳0.43.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
78.66.Fd III-V semiconductors

Selective area oxidation of silicon with a scanning force microscope

H. C. Day and D. R. Allee

Appl. Phys. Lett. 62, 2691 (1993); http://dx.doi.org/10.1063/1.109259 (3 pages) | Cited 109 times

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The use of a scanning force microscope with a metallized tip to do selective area oxidation of silicon is demonstrated. Sub‐100 nm lines have been achieved. Removal of the oxide lines with buffered hydrofluoric acid reveals trenches in the silicon consistent with silicon consumption in SiO2 formation.  
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81.65.-b Surface treatments
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy

Microstructural analysis of nickel silicide formed by nickel/silicon‐on‐oxide annealing

H. Yang, R. F. Pinizzotto, L. Luo, and F. Namavar

Appl. Phys. Lett. 62, 2694 (1993); http://dx.doi.org/10.1063/1.109234 (3 pages) | Cited 6 times

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Microstructures of crystalline nickel disilicide thin films formed on SIMOX (separation by implantation of oxygen) Si‐on‐oxide substrates were analyzed using electron microscopy. The samples were examined both in the top‐down plane‐view orientation and in cross section along a [110] direction. The nickel silicide films were formed through thermal reaction of metallic nickel deposited on the top Si layer of the SIMOX substrates. The results were compared with epitaxial NiSi2 layers grown on single crystal silicon substrates. Twin boundaries were observed at the silicide/oxide interface. The oxide layer acts as a diffusion barrier which prevents nickel from diffusing into the substrate resulting in uniform NiSi2 on a SiO2/Si substrate.
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68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
68.55.-a Thin film structure and morphology
81.15.Np Solid phase epitaxy; growth from solid phases

Luminescence efficiency of near‐surface quantum wells before and after ion‐gun hydrogenation

Ying‐Lan Chang, I‐Hsing Tan, Yong‐Hang Zhang, James Merz, Evelyn Hu, A. Frova, and V. Emiliani

Appl. Phys. Lett. 62, 2697 (1993); http://dx.doi.org/10.1063/1.109235 (3 pages) | Cited 21 times

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We have studied the effects of the proximity of a bare Al0.3Ga0.7As surface on the luminescence of an underlying GaAs quantum well (QW) before and after hydrogenation. The mechanism which is affected by H is tunneling to surface states through the surface barrier. Its thickness was varied by wet etching from 60 to 350 Å. Our experiments reveal that the degradation of luminescence efficiency from the QW is dependent on the surface barrier thickness and the excitation energy used in the photoluminescence measurements. A complete recovery or even further enhancement of luminescence efficiency was observed in the near‐surface QW after low‐energy ion‐beam hydrogenation, even at room temperature.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
73.40.Gk Tunneling
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Light‐emitting porous silicon diode with an increased electroluminescence quantum efficiency

P. Steiner, F. Kozlowski, and W. Lang

Appl. Phys. Lett. 62, 2700 (1993); http://dx.doi.org/10.1063/1.109236 (3 pages) | Cited 77 times

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The fabrication technology and the properties of a light‐emitting device including a porous pn junction are presented. We employ the selective formation of different kinds of porous silicon substructures caused by the doping level and the illumination during anodization. The device has a nanoporous light‐emitting n layer between a mesoporous p+‐doped capping layer and the macroporous n substrate. The pn junction formed in this way has strong rectifying characteristics. It shows bright red‐orange light emission under forward bias. Compared to simple metal‐porous silicon devices, the structure has an increased quantum efficiency (factor 10–100).
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Deformation induced deep levels in p‐CdTe

I. A. Hümmelgen and W. Schröter

Appl. Phys. Lett. 62, 2703 (1993); http://dx.doi.org/10.1063/1.109237 (2 pages) | Cited 7 times

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α and β dislocations are separately investigated in p‐CdTe by deep level transient spectroscopy. Two lines, whose amplitudes increase with increasing dislocation density are found. The defect concentration is found to be higher in case of β dislocations. One line, at Ev+0.44 eV, is Gaussian broadened, while the second, at Ev+0.35 eV, shows unusual capture characteristics.
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71.55.Gs II-VI semiconductors
61.72.Lk Linear defects: dislocations, disclinations
72.80.Ey III-V and II-VI semiconductors

In situ detection of relaxation in InGaAs/GaAs strained layer superlattices using laser light scattering

F. G. Celii, E. A. Beam, L. A. Files‐Sesler, H.‐Y. Liu, and Y. C. Kao

Appl. Phys. Lett. 62, 2705 (1993); http://dx.doi.org/10.1063/1.109238 (3 pages) | Cited 12 times

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We report the use of laser light scattering (LLS) for the in situ detection of strained epitaxial layer relaxation. Strained layer superlattices (SLSs) of InGaAs/GaAs were prepared by molecular beam epitaxy. The rapid increase in the LLS signal was interpreted as increased surface roughness due to surface steps generated during InGaAs relaxation. The LLS signal was sharply peaked with respect to the azimuthal angle (the rotation angle between crystal axes and the detection axis), indicating the scattering comes primarily from α misfit dislocations which run parallel to the (011) direction. The growth time at which the LLS signal onset occurred, together with the InGaAs growth rate, yielded the critical layer thickness, hc. The hc value for SLSs of In0.17Ga0.83As/GaAs with thicknesses of 4.6/17 and 4.6/7.8 nm were 25 and 23 nm, respectively, and almost identical to values obtained for single InGaAs layers. The observed values of hc are greater than those calculated using the standard force‐balance model. Dynamic effects of dislocation propagation and surface smoothing were also observed in real‐time.
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68.55.-a Thin film structure and morphology
78.66.Fd III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.Rh Phase transitions and critical phenomena

Heteroepitaxial growth of InP/In0.52Ga0.48As structures on GaAs (100) by gas‐source molecular beam epitaxy

T. P. Chin and C. W. Tu

Appl. Phys. Lett. 62, 2708 (1993); http://dx.doi.org/10.1063/1.109239 (3 pages) | Cited 8 times

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High quality In0.52Ga0.48As, InP, and In0.52Ga0.48As/InP single quantum wells were grown on GaAs (100) by gas‐source molecular beam epitaxy (GSMBE) with a 2‐μm thick InxGa1−xAs buffer layer where x was linearly graded from 0 to 0.52. Reflection high‐energy electron diffraction patterns and specular beam intensity oscillations showed that the growth mode of In0.52Ga0.48As and InP were layer by layer despite the lattice mismatch (Δa/a=3.8%) between InP and GaAs. Photoluminescence line widths at 10 K of a 1‐μm thick InP and a 5‐nm wide In0.52Ga0.48As/InP single quantum well are 4.9 and 10 meV, respectively, which are comparable to the values measured from similar structures grown lattice matched on an InP substrate (3.5 and 7 meV, respectively) by the same GSMBE system. The quantum‐well luminescence intensity is also comparable to lattice‐matched samples.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
68.55.-a Thin film structure and morphology

GaAs single‐domain growth on exact (100) Si substrate

K.‐R. Sprung, K. Wilke, G. Heymann, J. Varrio, and M. Pessa

Appl. Phys. Lett. 62, 2711 (1993); http://dx.doi.org/10.1063/1.109240 (2 pages) | Cited 3 times

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Single‐domain growth of a GaAs layer showing a relatively good crystal structure and specular surface has been demonstrated on a silicon substrate which has been cut along an exact (100) plane. The substrate was patterned with a sawtooth grating using electron beam lithography, and the layers were grown by molecular beam epitaxy.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Observation of quantum confinement effects in strained Si0.84Ge0.16/Si quantum wells at room temperature

Y. F. Chen, Y. T. Dai, H. P. Chou, D. C. Chang, C. Y. Chang, and P. J. Wang

Appl. Phys. Lett. 62, 2713 (1993); http://dx.doi.org/10.1063/1.109241 (3 pages) | Cited 5 times

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We report the first study of quantum confinement shifts of energy gap in strained Si0.84Ge0.16/Si quantum wells at room temperature by photothermal deflection spectroscopy (PDS) technique. The experimental results obtained from the amplitude and phase of the PDS signal are in good agreement with quantum well subband calculation.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Li Other semiconductors

Band‐gap discontinuity control for InGaAs/InGaAsP multiquantum‐well structures by tensile‐strained barriers

Masaaki Nido, Koh‐ichi Naniwae, Tomoji Terakado, and Akira Suzuki

Appl. Phys. Lett. 62, 2716 (1993); http://dx.doi.org/10.1063/1.109242 (3 pages) | Cited 2 times

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The changes in InGaAsP conduction‐ and valence‐band edge energies due to tensile strain, have been measured by optical methods at 77 K. The measured increases in the conduction‐ and valence‐band edge energies for the 0.5% tensile‐strained InGaAsP, compared to the unstrained InGaAsP (1.2 μm band‐gap wavelength), are 70 and 38 meV, respectively. The experimentally obtained values are in accordance with calculated values. The results show that the ratio of the conduction‐ and valence‐band discontinuities in InGaAs/InGaAsP multiquantum‐well structures can be controlled by the tensile‐strained barrier.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors

Controlling of Schottky barrier heights for Au/n‐GaAs and Ti/n‐GaAs with hydrogen introduced after metal deposition by bias annealing

S. X. Jin, H. P. Wang, M. H. Yuan, H. Z. Song, H. Wang, W. L. Mao, G. G. Qin, Ze‐Ying Ren, Bing‐Chen Li, Xiong‐Wei Hu, and Guo‐Sheng Sun

Appl. Phys. Lett. 62, 2719 (1993); http://dx.doi.org/10.1063/1.109243 (3 pages) | Cited 4 times

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Up to now, in most of the research work done on the effect of hydrogen on a Schottky barrier, the hydrogen was introduced into the semiconductor before metal deposition. This letter reports that hydrogen can be effectively introduced into the Schottky barriers (SBs) of Au/n‐GaAs and Ti/n‐GaAs by plasma hydrogen treatment (PHT) after metal deposition on 〈100〉 oriented n‐GaAs substrates. The Schottky barrier height (SBH) of a SB containing hydrogen shows the zero/reverse bias annealing (ZBA/RBA) effect. ZBA makes the SBH decrease and RBA makes it increase. The variations in the SBHs are reversible. In order to obtain obvious ZBA/RBA effects, selection of the temperature for plasma hydrogen treatment is important, and it is indicated that 100 °C for Au/n‐GaAs and 150 °C for Ti/n‐GaAs are suitable temperatures. It is concluded from the analysis of experimental results that only the hydrogen located at or near the metal‐semiconductor interface, rather than the hydrogen in the bulk of either the semiconductor or the metal, is responsible for the ZBA/RBA effect on SBH.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Cg Contact resistance, contact potential
73.40.Ns Metal-nonmetal contacts
81.65.-b Surface treatments

Crystalline linkage and defect structures in bulk zone melt textured YBa2Cu3O7 observed by transmission electron microscopy

A. Zanota, E. P. Kvam, D. Balkin, and P. J. McGinn

Appl. Phys. Lett. 62, 2722 (1993); http://dx.doi.org/10.1063/1.109244 (3 pages) | Cited 16 times

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The microstructural features of zone melt textured wires of YBa2Cu3O7 (123) with and without additions of Y2BaCuO5 have been examined by transmission electron microscopy. The 123 phase is observed to form well aligned platelets, which are of limited extent along [001], but extremely long in the perpendicular directions. Although platelet boundaries are wetted by a second phase, junctions are commonly observed to interconnect the plates. This suggests the possibility that the wires are actually highly defective single crystals. High densities of stacking faults are also observed, particularly at Y2BaCuO5/YBa2Cu3O7 interfaces and at dislocation arrays. It is suggested that these result from a drive for phase conversion to YBa2Cu4O8, and that they may be associated with flux pinning.
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68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
74.25.Uv Vortex phases (includes vortex lattices, vortex liquids, and vortex glasses)
74.72.-h Cuprate superconductors
74.81.Bd Granular, melt-textured, amorphous, and composite superconductors

Carrier‐modulated, microwave‐detected Shubnikov–de Haas oscillations in two‐dimensional systems

H. Linke, B. Kowalski, P. Ramvall, P. Emanuelsson, P. Omling, K. Oettinger, M. Drechsler, and B. K. Meyer

Appl. Phys. Lett. 62, 2725 (1993); http://dx.doi.org/10.1063/1.109245 (3 pages) | Cited 4 times

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It was recently shown that Shubnikov–de Haas (SdH) oscillations observed in conventional resistance measurements can be dramatically enhanced by light‐induced carrier modulation [S. E. Schacham, E. J. Haugland, and S. A. Alterovitz, Appl. Phys. Lett. 61, 551 (1992)]. Here we report on a similar observation in the case of contact‐free, microwave‐detected SdH oscillations. In the original version of this nondestructive technique [P. Omling, B. Meyer, and P. Emanuelsson, Appl. Phys. Lett. 58, 931 (1991)], magnetic‐field modulation was applied in order to enhance the sensitivity. If, instead, the carrier concentration is modulated by illumination, we show that a similar enhancement in the sensitivity of the signal is obtained. We demonstrate that very simple microwave equipment can be used for the measurements, and that the accessible magnetic‐field region can be extended, allowing for contact‐free transport investigations in the high magnetic‐field region.
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71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Pz Photoconduction and photovoltaic effects

Detailed analysis of the in situ magneto‐optic Kerr signal of gadolinium films near the Curie temperature

M. Farle, W. A. Lewis, and K. Baberschke

Appl. Phys. Lett. 62, 2728 (1993); http://dx.doi.org/10.1063/1.109246 (3 pages) | Cited 17 times

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The temperature and magnetic‐field‐dependent Kerr signal of layer‐by‐layer grown 300 Å Gd(0001) on W(110) is analyzed below and above the Curie temperature TC. The changes in the signal shape when passing through TC are discussed. We introduce a new and independent method for accurately determining TC in thin magnetic films in ultrahigh vacuum. As a consequence, discussions of the remanence, the field induced magnetization, and the critical exponent β become more transparent.
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75.70.Ak Magnetic properties of monolayers and thin films
75.30.Gw Magnetic anisotropy
75.50.Cc Other ferromagnetic metals and alloys

Simple, extremely low resistance contact system to n‐InP that does not exhibit metal‐semiconductor intermixing during sintering

Victor G. Weizer and Navid S. Fatemi

Appl. Phys. Lett. 62, 2731 (1993); http://dx.doi.org/10.1063/1.109247 (3 pages) | Cited 4 times

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Contact formation to InP is plagued by the violent metal‐semiconductor intermixing that takes place during the contact sintering process. We have discovered a truly unique contact system, involving Au and Ge, which is easily fabricated, which exhibits extremely low values of contact resistivity, and in which there is virtually no metal‐semiconductor interdiffusion, even after extended sintering. We present a description of this contact system and suggest possible mechanisms to explain the observed behavior.
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68.35.Fx Diffusion; interface formation
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.40.Cg Contact resistance, contact potential
73.40.Ns Metal-nonmetal contacts
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