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31 May 1993

Volume 62, Issue 22, pp. 2745-2885

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Photodetectors fabricated from rapid‐thermal‐oxidized porous Si

Chaochieh Tsai, K.‐H. Li, Joe C. Campbell, and Al Tasch

Appl. Phys. Lett. 62, 2818 (1993); http://dx.doi.org/10.1063/1.109220 (3 pages) | Cited 15 times

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A metal‐semiconductor‐metal (MSM) photoconductor and a p‐n photodiode have been fabricated from rapid‐thermal‐oxidized (RTO) porous Si. The MSM photoconductor achieved 2.8×higher responsivity at 350 nm than a UV‐enhanced Si photodiode, and the RTO photodiode exhibited an external quantum efficiency of 75% at 740 nm.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
81.65.-b Surface treatments

Synchrotron radiation assisted Si epitaxial growth: Comparison of growth characteristics between Si2H6 and SiH2Cl2 gases

Tsuneo Urisu, Tetsuo Akutsu, and Kozo Kuchitsu

Appl. Phys. Lett. 62, 2821 (1993); http://dx.doi.org/10.1063/1.109221 (3 pages) | Cited 5 times

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Effects of synchrotron radiation (SR) irradiation on the Si epitaxial growth using Si2H6 and SiH2Cl2 gases were investigated in the substrate temperature range of 400–600 °C. Single‐crystal growth was observed in the whole temperature region for SiH2Cl2, but only at certain high temperatures, where the growth rate showed a significant temperature dependence, for Si2H6. Gas‐phase excitation mechanism became dominant in the low‐temperature deposition. SR‐assisted desorption of hydrogen is found to be important in the process of crystallization in the case of Si2H6, whereas chemical processes such as desorption in the form of HCl are considered as probable for SiH2Cl2.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
82.50.-m Photochemistry
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Intersubband optic phonon resonances in electrostatically confined quantum wires

Dejan Jovanovic, Jean‐Pierre Leburton, Khalid Ismail, Jeffrey M. Bigelow, and Marcos H. Degani

Appl. Phys. Lett. 62, 2824 (1993); http://dx.doi.org/10.1063/1.109222 (3 pages) | Cited 6 times

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We investigate the occurrence of resonant intersubband optic phonon scattering in an array of quantum wires at high temperatures. Self‐consistent solutions of the Schrödinger and Poisson equations with a subsequent Monte Carlo analysis of intersubband scattering reveal a strong resonant polar optic phonon coupling between subbands at the gate bias indicated by the experimental data. The observation of resonant scattering is only possible because the quasi‐1D form of Gauss’ law shows an opposite trend to that for 2D systems in the dependence of the eigenenergy spectrum on gate bias.
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72.20.Dp General theory, scattering mechanisms
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
63.20.K- Phonon interactions

Time resolved luminescence study of recombination processes in electroluminescent polymers

U. Lemmer, R. F. Mahrt, Y. Wada, A. Greiner, H. Bässler, and E. O. Göbel

Appl. Phys. Lett. 62, 2827 (1993); http://dx.doi.org/10.1063/1.109223 (3 pages) | Cited 80 times

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Picosecond luminescence studies on poly(p‐phenylene vinylene) (PPV) and related compounds in the temperature range of 10–300 K are reported. We identify a fast nonradiative and considerably slower radiative recombination channel. The fastest decay is observed in PPV. In the phenyl substituted derivative poly(phenyl‐p‐phenylenevinylene) a significant contribution from a slow component (∼1.3 ns) is found. Dilution of the polymer in a blend leads to an increase of the contribution of the slow component. We attribute the fast decay to luminescence quenching due to energy dependent trapping of mobile excitations whereas the slow component reflects the radiative recombination.
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78.60.Fi Electroluminescence
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.47.-p Spectroscopy of solid state dynamics

Selective reactive ion etching of InGaAs/InAlAs heterostructures in HBr plasma

Sambhu Agarwala, Ilesanmi Adesida, Catherine Caneau, and Rajaram Bhat

Appl. Phys. Lett. 62, 2830 (1993); http://dx.doi.org/10.1063/1.109224 (3 pages) | Cited 12 times

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A reactive ion etching process using HBr plasma has been developed for the selective removal of InGaAs on InAlAs. Etch rates of 110 and 0.67 Å/min are obtained for InGaAs and InAlAs, respectively, at a plasma self‐bias voltage of −100 V, a chamber pressure of 120 mTorr, and a HBr flow rate of 10 sccm. This translates to an etch selectivity of over 160 which is the highest that has been obtained for this material system. The etch stop mechanism on the InAlAs is deduced from x‐ray photoelectron spectroscopy to be due to involatile Al2O3 that is formed by residual O2 and/or H2O vapor in the chamber. It is shown that the surface of the etched InAlAs can be restored to the state prior to HBr etching by sequential rinsing in dilute HCl and H2O. This process should be useful for the fabrication of InAlAs/InGaAs heterostructure field‐effect transistors.
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81.65.-b Surface treatments
85.40.Hp Lithography, masks and pattern transfer

In situ investigation of amorphous silicon/silicon nitride interfaces by infrared ellipsometry

H. Shirai, B. Drévillon, and R. Ossikovski

Appl. Phys. Lett. 62, 2833 (1993); http://dx.doi.org/10.1063/1.109225 (3 pages) | Cited 4 times

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A detailed in situ study by infrared phase‐modulated ellipsometry of interfaces between plasma‐deposited amorphous silicon (a‐Si:H) and silicon nitride (a‐SiNx) is presented. The structure of the interface is affected by the deposition sequence. A behavior compatible with a sharp interface is observed when a‐SiNx is deposited on top of a‐Si:H, the underlayer material being very weakly influenced by the deposition of the overlayer. In contrast, a graded transition is observed when a‐SiNx is deposited first. In the latter case, the infrared measurements directly reveal a nitrogen tail incorporated in the first monolayers of a‐Si:H (10–20 Å thick). The formation mechanisms of the interfaces are discussed.
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68.35.Fx Diffusion; interface formation
68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Direct observation of porous SiC formed by anodization in HF

Joseph S. Shor, Ilana Grimberg, Ben‐Zion Weiss, and Anthony D. Kurtz

Appl. Phys. Lett. 62, 2836 (1993); http://dx.doi.org/10.1063/1.109226 (3 pages) | Cited 84 times

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A process for forming porous SiC from single‐crystal SiC wafers has been demonstrated. Porous SiC can be fabricated by anodizing n‐type 6H‐SiC in HF under UV illumination. Transmission electron microscopy reveals pores of sizes 10–30 nm with interpore spacings ranging from ≊5 to 150 nm. This is the first reported direct observation of porous SiC formation.  
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81.65.-b Surface treatments
82.45.-h Electrochemistry and electrophoresis
82.50.-m Photochemistry
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)

Hydrostatic pressure dependence of the Cu‐acceptor level in In0.53Ga0.47As

M. Gerling and L. P. Tilly

Appl. Phys. Lett. 62, 2839 (1993); http://dx.doi.org/10.1063/1.109227 (3 pages)

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Low‐temperature photoluminescence measurements have been used to study the evolution of the Cu‐acceptor level in In0.53Ga0.47As as a function of hydrostatic pressure. In the pressure range up to 37 kbar the Cu related emission closely tracks the near‐band‐edge emission. A pressure coefficient of the Cu‐acceptor level relative to the valence‐band edge of 0±0.5 meV/kbar was determined, and the corresponding pressure coefficient of the Cu‐acceptor level relative to the conduction‐band edge was found to be 10.9±0.2 meV/kbar.
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71.55.Eq III-V semiconductors
78.55.Cr III-V semiconductors

Visible photoluminescence from nanocrystalline Ge formed by H2 reduction of Si0.6Ge0.4O2

D. C. Paine, C. Caragianis, T. Y. Kim, Y. Shigesato, and T. Ishahara

Appl. Phys. Lett. 62, 2842 (1993); http://dx.doi.org/10.1063/1.109228 (3 pages) | Cited 91 times

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Samples of nanocrystalline Ge embedded in SiO2 that display visible photoluminescence were synthesized from chemical vapor deposition‐grown Si0.6Ge0.4 in a two step process of hydrothermal oxidation using steam at 25 MPa and 475 °C followed by annealing at 750 °C in flowing forming gas (80/20:N2/H2). A broad photoluminescence band, peaked at 2.14 eV (580 nm) with a full width at half maximum of 0.3 eV, was observed in samples that were annealed at 750 °C in flowing forming gas for 10, 30, and 60 min. As‐oxidized (i.e., unprecipitated) samples show no photoluminescence peak when excited under identical conditions.
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78.55.Hx Other solid inorganic materials
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
81.30.Mh Solid-phase precipitation

Quality of ZnSe/GaAs epilayers studied by spatial correlation model of Raman scattering

J. Wang, W. H. Yao, J. B. Wang, H. Q. Lu, H. H. Sun, X. Wang, and Z. L. Pang

Appl. Phys. Lett. 62, 2845 (1993); http://dx.doi.org/10.1063/1.109229 (3 pages) | Cited 8 times

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In this letter, the spatial correlation model has been used for interpreting the line shapes of the first‐order longitudinal‐optical phonon Raman spectra of ZnSe/GaAs epitaxial layers. The good agreement between theoretical line shapes and the experiment measurements was illustrated for the samples grown by the molecular beam epitaxy (MBE), hot wall epitaxy (HWE), and hot wall beam epitaxy (HWBE).
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78.30.Fs III-V and II-VI semiconductors
63.50.-x Vibrational states in disordered systems
68.55.-a Thin film structure and morphology

Raman study of electron confinement in Si δ‐doped GaAs

A. Mlayah, R. Carles, E. Bedel, and A. Muñoz‐Yagüe

Appl. Phys. Lett. 62, 2848 (1993); http://dx.doi.org/10.1063/1.109230 (3 pages) | Cited 7 times

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In this letter Raman spectroscopy measurements on Si δ‐doped GaAs are reported. The coupling of two‐dimensional (2D) intersubband plasmons with the polar phonons is clearly demonstrated. The change undergone by the coupled mode signal as a function of the depth explored by the Raman probe is studied and allows for an original and accurate investigation of electron gas confinement. Indeed, it is shown that a quantitative analysis of depth profiling measurements allows the real‐space extent of the quasi‐2D electron gas in δ‐doped structures to be estimated.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.30.Fs III-V and II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Thin‐film CdS/CdTe solar cell with 15.8% efficiency

J. Britt and C. Ferekides

Appl. Phys. Lett. 62, 2851 (1993); http://dx.doi.org/10.1063/1.109629 (2 pages) | Cited 260 times

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This letter describes the fabrication and characteristics of high‐efficiency thin‐film CdS/CdTe heterojunction solar cells. CdS films have been prepared by chemical bath deposition and p‐CdTe films have been deposited by close‐spaced sublimation. A CdS/CdTe solar cell of greater than 1 cm2 area with an AM1.5 efficiency of 15.8% is reported.
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84.60.Jt Photoelectric conversion
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.50.Pz Photoconduction and photovoltaic effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

High‐mobility p‐channel metal‐oxide‐semiconductor field‐effect transistor on strained Si

D. K. Nayak, J. C. S. Woo, J. S. Park, K. L. Wang, and K. P. MacWilliams

Appl. Phys. Lett. 62, 2853 (1993); http://dx.doi.org/10.1063/1.109205 (3 pages) | Cited 67 times

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An enhancement‐mode p‐channel metal‐oxide‐semiconductor field‐effect transistor (PMOSFET) is fabricated on a strained Si layer for the first time. A biaxial strain in a thin Si layer is produced by pseudomorphically growing this layer on a Ge0.25Si0.75 buffer layer which is grown on a Si substrate. At higher magnitude of gate bias, channel mobility of a strained Si PMOSFET has been found to be 50% higher than that of an identically processed conventional Si PMOSFET.
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85.30.Tv Field effect devices
73.50.Dn Low-field transport and mobility; piezoresistance
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Experimental observation of multiple current‐voltage curves and zero‐bias memory phenomena in quantum well diodes with n−‐n+‐n− spacer layers

K. K. Gullapalli, A. J. Tsao, and D. P. Neikirk

Appl. Phys. Lett. 62, 2856 (1993); http://dx.doi.org/10.1063/1.109206 (3 pages) | Cited 9 times

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We report the observation of a new room‐temperature storage phenomenon based on quantum interference. Multiple, stable current‐voltage curves extending continuously through zero bias have been observed in GaAs/AlAs double barrier quantum well diodes containing n−‐n+‐n− spacer layers. Once placed on a particular branch, the devices retain memory of the branch they lie on, even when held at zero bias for extended periods of time. The devices can be repetitively switched between the different branches of the current‐voltage characteristics. The experimental observations are consistent with the multiple self‐consistent solutions to the coupled Schrödinger and Poisson equations found for diodes that combine heterostructure tunneling barriers with n−‐n+‐n− spacer layers.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Ht High-field and nonlinear effects
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Metal contacts to gallium nitride

J. S. Foresi and T. D. Moustakas

Appl. Phys. Lett. 62, 2859 (1993); http://dx.doi.org/10.1063/1.109207 (3 pages) | Cited 186 times

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We report measurements on the nature of aluminum and gold contacts to GaN. The GaN films were deposited onto the R‐plane of sapphire substrates by molecular beam epitaxy and are autodoped n‐type. Metal contacts were deposited by evaporation and were patterned photolithographically. Current‐voltage characterization shows that the as‐deposited aluminum contacts are ohmic while the as‐deposited gold contacts are rectifying. The gold contacts become ohmic after annealing at 575 °C, a result attributed to gold diffusion. The specific contact resistivity of the ohmic aluminum and gold contacts were found by transfer length measurements to be of device quality (10−7–10−8 Ω m2). The results of these studies suggest a direct correlation between barrier height and work function of the metal, consistent with the strong ionic character of GaN.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Cg Contact resistance, contact potential
73.40.Ns Metal-nonmetal contacts
73.61.Ey III-V semiconductors

Intrinsic superconducting radiation detector

M. I. Flik, Z. M. Zhang, and K. E. Goodson

Appl. Phys. Lett. 62, 2862 (1993); http://dx.doi.org/10.1063/1.109182 (3 pages) | Cited 7 times

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A novel radiation detector, the Intrinsic Superconducting Radiation Detector (ISRD), is proposed. It employs the temperature dependence of the critical current of high Tc superconducting films to determine the detector temperature change caused by incident radiation and operates almost exclusively in the superconducting state. The ISRD has the potential to be a phonon‐noise‐limited thermal detector.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
74.25.N- Response to electromagnetic fields
74.78.-w Superconducting films and low-dimensional structures
85.25.Dq Superconducting quantum interference devices (SQUIDs)

Double step‐edge weak links integrated with spiral antenna structure in epitaxial Tl2CaBa2Cu2O8 films for millimeter wave mixing

J. P. Hong, H. R. Fetterman, R. J. Forse, and A. H. Cardona

Appl. Phys. Lett. 62, 2865 (1993); http://dx.doi.org/10.1063/1.109183 (3 pages) | Cited 11 times

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High‐temperature superconducting mixers have been fabricated from epitaxial films of Tl2CaBa2Cu2O8 utilizing surface double step‐edge junctions on LaAlO3 substrates. These mixers were integrated with spiral antenna structure designed for broadband millimeter wave coupling of the radiation into weak links. Under the optimum bias current condition heterodyne mixing of signals at W band (94 GHz) frequencies has been measured, and noise performance operating at V band (60 GHz) has been characterized both at liquid nitrogen and liquid helium temperatures. By using an etching technique, two orders of magnitude improvement in noise performance over the earlier results have been obtained. Strong mixing signals were achieved right up to Tc (102 K).
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
84.30.Qi Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors
74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors

Electrical properties of Y‐doped CaCuO2 films prepared by organometallic chemical vapor deposition

Kenkichiro Kobayashi, Yozo Ishihara, Shigenori Matsushima, and Genji Okada

Appl. Phys. Lett. 62, 2868 (1993); http://dx.doi.org/10.1063/1.109184 (3 pages)

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Y‐doped CaCuO2 films have been formed on SrTiO3 (100) substrates in the range of 730–790 °C. The lattice constants of Y‐doped CaCuO2 films are c=3.180–3.183 Å, which are shorter than that of an undoped CaCuO2 film. Although the resistivity of a Y‐doped CaCuO2 film is significantly decreased in comparison with an undoped CaCuO2 film, no superconductivity is found in the Y‐doped CaCuO2 films at a temperature higher than 12 K.
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74.62.Dh Effects of crystal defects, doping and substitution
74.72.-h Cuprate superconductors

Spatially resolved electrical characterization of a YBa2Cu3O7−δ flux transformer

K.‐D. Husemann, R. Gross, R. P. Huebener, and B. Roas

Appl. Phys. Lett. 62, 2871 (1993); http://dx.doi.org/10.1063/1.109185 (3 pages) | Cited 12 times

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We report the spatially resolved transport properties of a three‐layer YBa2Cu3O7−δ flux transformer using low‐temperature scanning electron microscopy. The seven‐turn spiral coil is fabricated using a crossover technology with SrTiO3 as an insulator. The different layers were patterned with shadow masks or optical lithography. We show that the insulating SrTiO3 film has no shorts and that the overlaying YBa2Cu3O7−δ spiral reveals a reduced zero resistance critical temperature at the steps and edges of the insulator.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors

High‐pressure sintering characteristics of Sm2Fe17Nx powder

K. Machida, Y. Nakatani, G. Adachi, and A. Onodera

Appl. Phys. Lett. 62, 2874 (1993); http://dx.doi.org/10.1063/1.109186 (3 pages) | Cited 5 times

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Sintering characteristics of Sm2Fe17Nx were studied under high‐pressure conditions (pressure=3 GPa and temperatures=300, 550, and 800 °C) without any binding material. High‐pressure treatments at 3 GPa and 550 °C succeeded in preparing the sintered materials without any decomposition, which possessed density values close to the theoretical one and good mechanical strength property, although the temperature of 300 °C was little enough for sintering of the Sm2Fe17Nx powder and the sample prepared at 800 °C provided a different x‐ray diffraction (XRD) pattern from that of Sm2Fe17Nx. The result that the remanence values of Sm2Fe17Nx were almost similar to each other (6.5–7.0 kG) before and after the sintering at 3 GPa and 550 °C indicated that the high‐pressure treatments never involved any serious undesirable effect on the magnetization property of resulting sintered materials.
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81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
75.50.Bb Fe and its alloys

Pulsed‐laser induced desorption and subsequent readsorption in ambient gas

Gregor Holler, Uwe Albrecht, Stephan Herminghaus, and Paul Leiderer

Appl. Phys. Lett. 62, 2877 (1993); http://dx.doi.org/10.1063/1.109187 (3 pages) | Cited 2 times

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We have investigated the phenomenon of readsorption after pulsed‐laser induced thermal desorption during the presence of ambient gas. The temporal evolution of the readsorption of water has been measured as a function of the ambient gas pressure for helium and carbon‐dioxide atmospheres. CO2 pressures above 10 mbar lead to a virtually complete readsorption of the desorbed material. A model based on a nearly one‐dimensional diffusion scheme explains this remarkable result.
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68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
81.65.-b Surface treatments

Below band‐gap laser ablation of diamond for transmission electron microscopy

T. George, M. C. Foote, R. P. Vasquez, E. P. Fortier, and J. B. Posthill

Appl. Phys. Lett. 62, 2880 (1993); http://dx.doi.org/10.1063/1.109188 (3 pages) | Cited 2 times

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A 248 nm excimer laser was used to thin naturally occurring type 1a diamond substrates at normal and glancing (22°) incidence. Perforation of a 250‐μm‐thick substrate was achieved in about 15 min at normal incidence. While the substrate thinned at glancing incidence was found to have large electron‐transparent areas, that thinned at normal incidence required additional argon‐ion milling to achieve electron transparency. X‐ray photoelectron spectroscopy of the back surface of the diamond failed to detect any graphite or glassy carbon, confirming that damage due to laser ablation occurs only at the incident surface. Samples prepared using this technique imaged in the transmission electron microscope were observed to have retained the nitrogen platelets characteristic of such type 1a diamonds.
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81.65.-b Surface treatments
79.20.Ds Laser-beam impact phenomena
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)

Monte Carlo investigation of carrier‐carrier effects in femtosecond pump and probe experiments

L. Rota and D. K. Ferry

Appl. Phys. Lett. 62, 2883 (1993); http://dx.doi.org/10.1063/1.109189 (3 pages) | Cited 12 times

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We present a Monte Carlo simulation of ultrafast absorption saturation studies of hot carriers in GaAs. We show that carrier‐carrier scattering is the dominant scattering mechanism in the femtosecond time regime and that pump and probe experiments are the ideal tool for the study of the strength of this interaction. Three different approaches are used to study carrier‐carrier scattering and the best agreement with experimental results is obtained by molecular dynamics.
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78.47.-p Spectroscopy of solid state dynamics
72.20.Dp General theory, scattering mechanisms
72.80.Ey III-V and II-VI semiconductors
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